Pub Date : 2022-05-11DOI: 10.23919/ICEP55381.2022.9795391
R. Kawasaki, R. Ishimatsu, K. Okada, J. Mizuno, T. Kasahara
We investigated an effect of the annealing temperature of titanium dioxide nanoparticles (TiO2 NPs) on luminescent performances of solution-based electrogenerated chemiluminescence (ECL) cells. The TiO2 NPs were spin-coated on a fluorine-doped tin oxide (FTO) cathode as an electron injection layer and then annealed at different temperatures of 250 °C and 450 °C. An orange-red ECL solution was prepared by dissolving a ruthenium complex in propylene carbonate. The ECL cell was fabricated by sandwiching the solution between the FTO anode and the TiO2 NPs-coated FTO cathode and evaluated under direct current (DC) voltages. The 450 °C-annealed cell was found to exhibit significant improvements in the luminance and the lifetime in comparison with the 250 °C-annealed cell.
{"title":"Orange-Red Electrogenerated Chemiluminescence Cells Using Titanium Dioxide Nanoparticles Annealed at Different Temperatures","authors":"R. Kawasaki, R. Ishimatsu, K. Okada, J. Mizuno, T. Kasahara","doi":"10.23919/ICEP55381.2022.9795391","DOIUrl":"https://doi.org/10.23919/ICEP55381.2022.9795391","url":null,"abstract":"We investigated an effect of the annealing temperature of titanium dioxide nanoparticles (TiO2 NPs) on luminescent performances of solution-based electrogenerated chemiluminescence (ECL) cells. The TiO2 NPs were spin-coated on a fluorine-doped tin oxide (FTO) cathode as an electron injection layer and then annealed at different temperatures of 250 °C and 450 °C. An orange-red ECL solution was prepared by dissolving a ruthenium complex in propylene carbonate. The ECL cell was fabricated by sandwiching the solution between the FTO anode and the TiO2 NPs-coated FTO cathode and evaluated under direct current (DC) voltages. The 450 °C-annealed cell was found to exhibit significant improvements in the luminance and the lifetime in comparison with the 250 °C-annealed cell.","PeriodicalId":413776,"journal":{"name":"2022 International Conference on Electronics Packaging (ICEP)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127637922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-11DOI: 10.23919/ICEP55381.2022.9795370
Gengtao Zhang, Haojie Chen, Yang Yang, Shengli Ma, Yufeng Jin
Based on stacked through glass via (TGV) interposers, a dual-polarized antenna-in-package is proposed for 5G application. The antenna element shows a 4.3 GHz (25.8 - 30.1 GHz) bandwidth, fully covering the n257 band (26.5 - 29.5 GHz), and good radiation performance with a 5.2 dBi gain and cross-polarization suppression higher than 35 dB at 28 GHz. Owing to the differential feeding networks, it displays high port isolation of more than 35 dB within the bandwidth. A 2 × 2 antenna subarray with an embedded IC in mirroring configuration is demonstrated to improve cross-polarization suppression by 12 dB compared with regular configuration.
{"title":"A Differentially Fed Dual-polarized Antenna-in-Package Based on Stacked TGV Interposers for 5G Application","authors":"Gengtao Zhang, Haojie Chen, Yang Yang, Shengli Ma, Yufeng Jin","doi":"10.23919/ICEP55381.2022.9795370","DOIUrl":"https://doi.org/10.23919/ICEP55381.2022.9795370","url":null,"abstract":"Based on stacked through glass via (TGV) interposers, a dual-polarized antenna-in-package is proposed for 5G application. The antenna element shows a 4.3 GHz (25.8 - 30.1 GHz) bandwidth, fully covering the n257 band (26.5 - 29.5 GHz), and good radiation performance with a 5.2 dBi gain and cross-polarization suppression higher than 35 dB at 28 GHz. Owing to the differential feeding networks, it displays high port isolation of more than 35 dB within the bandwidth. A 2 × 2 antenna subarray with an embedded IC in mirroring configuration is demonstrated to improve cross-polarization suppression by 12 dB compared with regular configuration.","PeriodicalId":413776,"journal":{"name":"2022 International Conference on Electronics Packaging (ICEP)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134271265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-11DOI: 10.23919/ICEP55381.2022.9795558
C. Kleinholz, A. Cyriax, M. Hintz, J. Müller, T. Ortlepp
Commonly pressure sensors are often fabricated using silicon direct bonding or anodic bonding processes. Because of that additional preparation steps must be carried out and the achieved results of a high-strength bonding interface is not always sufficient. For this reason, the SiCer technology is a great advantage due to the combination of silicon and ceramics in a common sintering process and impress with good compatibility and high bonding strength.
{"title":"Manufacture of high-strength differential pressure sensor using SiCer technology","authors":"C. Kleinholz, A. Cyriax, M. Hintz, J. Müller, T. Ortlepp","doi":"10.23919/ICEP55381.2022.9795558","DOIUrl":"https://doi.org/10.23919/ICEP55381.2022.9795558","url":null,"abstract":"Commonly pressure sensors are often fabricated using silicon direct bonding or anodic bonding processes. Because of that additional preparation steps must be carried out and the achieved results of a high-strength bonding interface is not always sufficient. For this reason, the SiCer technology is a great advantage due to the combination of silicon and ceramics in a common sintering process and impress with good compatibility and high bonding strength.","PeriodicalId":413776,"journal":{"name":"2022 International Conference on Electronics Packaging (ICEP)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132718848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-11DOI: 10.23919/ICEP55381.2022.9795441
N. Tu, J. Lo, S.W. Ricky Lee
Inkjet printing polydimethylsiloxane (PDMS) has received wide interest in the field of additive manufacturing for printing flexible wearable electronics. Before depositing the PDMS on the target substrate with desired pattern, the PDMS ink must be ejected in a stable manner. One of the problems that affects the jetting quality is the satellite droplet coming with the dominate droplet during the printing process, which is known as the satellite effect. In this paper, we investigated the possibility of stable jetting of PDMS ink without the satellite effect. The cartridges with 10pl (FUJI Dimatix DMP-2850) were used to jet PDMS ink. The solvent for the preparation of PDMS ink was decane combined with toluene as a co-solvent for adjusting the physical properties of the PDMS ink. The generation of stable PDMS ink droplets was achieved by optimizing the mixture solvent of PDMS ink and the adjustment of the printing voltage waveform, which indicated the inkjet printing of PDMS is a promising method for fabricating flexible wearable electronics.
{"title":"Improved Inkjet Printing of Polydimethylsiloxane Droplets","authors":"N. Tu, J. Lo, S.W. Ricky Lee","doi":"10.23919/ICEP55381.2022.9795441","DOIUrl":"https://doi.org/10.23919/ICEP55381.2022.9795441","url":null,"abstract":"Inkjet printing polydimethylsiloxane (PDMS) has received wide interest in the field of additive manufacturing for printing flexible wearable electronics. Before depositing the PDMS on the target substrate with desired pattern, the PDMS ink must be ejected in a stable manner. One of the problems that affects the jetting quality is the satellite droplet coming with the dominate droplet during the printing process, which is known as the satellite effect. In this paper, we investigated the possibility of stable jetting of PDMS ink without the satellite effect. The cartridges with 10pl (FUJI Dimatix DMP-2850) were used to jet PDMS ink. The solvent for the preparation of PDMS ink was decane combined with toluene as a co-solvent for adjusting the physical properties of the PDMS ink. The generation of stable PDMS ink droplets was achieved by optimizing the mixture solvent of PDMS ink and the adjustment of the printing voltage waveform, which indicated the inkjet printing of PDMS is a promising method for fabricating flexible wearable electronics.","PeriodicalId":413776,"journal":{"name":"2022 International Conference on Electronics Packaging (ICEP)","volume":"23 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134079961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-11DOI: 10.23919/ICEP55381.2022.9795638
Chen-Wei Kao, P. Kung, Chih-Chia Chang, C. Kao
In this research, the terminal reaction of the Ti adhesion layer with Sn/Cu IMCs is discussed through thermal aging, which Ti is fully attached to Sn/Cu IMCs. The samples are first fabricated by electroplating Cu and Sn sequentially on the Ti adhesion layer to form micro bumps and then underwent thermal aging at 200 °C to observe the evolution between layers. After thermal aging from 0 h to 72 h, the micro bumps all transform into intermetallic structures (IMCs), yet they all attach well with the Ti adhesion layer. Moreover, the difference in diffusion rate between Cu and Sn will lead to some voids during aging. These voids will progress to the center of the bump through the depletion of the Cu layer, but they do not affect the attachment between the IMCs and the adhesion layer. To conclude, using Ti as an adhesion layer shows better adhesive behavior with IMCs than using Cr.
{"title":"Terminal Reaction Behaviors in Micro Bumps: Comparison of Ti and Cr Adhesion Layers","authors":"Chen-Wei Kao, P. Kung, Chih-Chia Chang, C. Kao","doi":"10.23919/ICEP55381.2022.9795638","DOIUrl":"https://doi.org/10.23919/ICEP55381.2022.9795638","url":null,"abstract":"In this research, the terminal reaction of the Ti adhesion layer with Sn/Cu IMCs is discussed through thermal aging, which Ti is fully attached to Sn/Cu IMCs. The samples are first fabricated by electroplating Cu and Sn sequentially on the Ti adhesion layer to form micro bumps and then underwent thermal aging at 200 °C to observe the evolution between layers. After thermal aging from 0 h to 72 h, the micro bumps all transform into intermetallic structures (IMCs), yet they all attach well with the Ti adhesion layer. Moreover, the difference in diffusion rate between Cu and Sn will lead to some voids during aging. These voids will progress to the center of the bump through the depletion of the Cu layer, but they do not affect the attachment between the IMCs and the adhesion layer. To conclude, using Ti as an adhesion layer shows better adhesive behavior with IMCs than using Cr.","PeriodicalId":413776,"journal":{"name":"2022 International Conference on Electronics Packaging (ICEP)","volume":"357 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113996073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Future Redistribution Layer (RDL) interposer requires low dielectric constant (Dk) and high density RDL layers to improve signal and power integrity in high- performance computing (HPC) application. This paper proposes alkali-developable photo-imageable dielectrics (PID), FG-Series with low Dk of 2.9 at 10GHz, which enable 2μm-via patterning and provide biased high accelerated stress test (b- HAST) resistance on 2μm-L/S Cu traces. FG-series is promising candidates to enable low signal delay, high density and good reliability for RDL interposer.
{"title":"Advanced Low Dk and High-Density Photo- Imageable Dielectrics for RDL Interposer","authors":"Tetsuya Nemoto, Junichi Ooto, Hirokazu Ito, Koichi Hasegawa","doi":"10.23919/ICEP55381.2022.9795456","DOIUrl":"https://doi.org/10.23919/ICEP55381.2022.9795456","url":null,"abstract":"Future Redistribution Layer (RDL) interposer requires low dielectric constant (Dk) and high density RDL layers to improve signal and power integrity in high- performance computing (HPC) application. This paper proposes alkali-developable photo-imageable dielectrics (PID), FG-Series with low Dk of 2.9 at 10GHz, which enable 2μm-via patterning and provide biased high accelerated stress test (b- HAST) resistance on 2μm-L/S Cu traces. FG-series is promising candidates to enable low signal delay, high density and good reliability for RDL interposer.","PeriodicalId":413776,"journal":{"name":"2022 International Conference on Electronics Packaging (ICEP)","volume":"103 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114122689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-11DOI: 10.23919/ICEP55381.2022.9795583
C. Lee, Wen-Hung Liu, Shu-Yi Chang, Ren-Shin Cheng, Yu-Min Lin, Hsiang-En Ding, W. Chiu, T. Chang, Chia-Hsin Lee, Chang-Chun Lee
In this paper, we investigated the structural analysis and electrical characteristics of EIC(Embedded Interposer Carrier) structure. The multi-chip EIC structure including a fan-out RDL process has been evaluated and developed. Key technologies including embedded interposers, molding process, temporary bonding, and RDL formation have been developed and integrated with good performance. The results indicate that the EIC carrier can be integrated, and there are data showing the feasibility of the chiplet in electronics applications. The electrical analysis will show not only frequency- and time-domain measurements under different lengths of interconnects but also the correlation between model and verification. In this new packaging structure, it is compatible with fan-out packaging technology and is easy to combine different chips to achieve performance close to 3D IC under a limited cost structure.
{"title":"Characteristic Analysis of a Multi-chip Embedded Interposer Carrier using a Wafer-Level Fan-Out Process","authors":"C. Lee, Wen-Hung Liu, Shu-Yi Chang, Ren-Shin Cheng, Yu-Min Lin, Hsiang-En Ding, W. Chiu, T. Chang, Chia-Hsin Lee, Chang-Chun Lee","doi":"10.23919/ICEP55381.2022.9795583","DOIUrl":"https://doi.org/10.23919/ICEP55381.2022.9795583","url":null,"abstract":"In this paper, we investigated the structural analysis and electrical characteristics of EIC(Embedded Interposer Carrier) structure. The multi-chip EIC structure including a fan-out RDL process has been evaluated and developed. Key technologies including embedded interposers, molding process, temporary bonding, and RDL formation have been developed and integrated with good performance. The results indicate that the EIC carrier can be integrated, and there are data showing the feasibility of the chiplet in electronics applications. The electrical analysis will show not only frequency- and time-domain measurements under different lengths of interconnects but also the correlation between model and verification. In this new packaging structure, it is compatible with fan-out packaging technology and is easy to combine different chips to achieve performance close to 3D IC under a limited cost structure.","PeriodicalId":413776,"journal":{"name":"2022 International Conference on Electronics Packaging (ICEP)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114207413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-11DOI: 10.23919/ICEP55381.2022.9795442
Li Wern Chew, Paik Wen Ong
Despite our computing technology and platform design are trending toward higher speeds for better performance, on the contrary, the printed circuit board (PCB) form factor needs to scale smaller and thinner to allow for bigger battery for battery life improvement. Due to this, layout design with dual referenced (SIG-PWR or GND-SIG-PWR) stack-up could not be avoided at all due to the limitation that we have on routing spaces or routing layers. In this paper, signal and power integrity (SIPI) co-simulation approach on USB3.2 with dual referencing is described and discussed. The co-sim approach is carried out using Advanced Design System (ADS) tool in time-domain where the power noise is directly injected to the power plane and its noise coupling impact on USB3.2 eye opening at the receiver end is then observed.
{"title":"Dual Referencing Simulation Approach on High Speed Interconnects USB3.2 (10Gbps)","authors":"Li Wern Chew, Paik Wen Ong","doi":"10.23919/ICEP55381.2022.9795442","DOIUrl":"https://doi.org/10.23919/ICEP55381.2022.9795442","url":null,"abstract":"Despite our computing technology and platform design are trending toward higher speeds for better performance, on the contrary, the printed circuit board (PCB) form factor needs to scale smaller and thinner to allow for bigger battery for battery life improvement. Due to this, layout design with dual referenced (SIG-PWR or GND-SIG-PWR) stack-up could not be avoided at all due to the limitation that we have on routing spaces or routing layers. In this paper, signal and power integrity (SIPI) co-simulation approach on USB3.2 with dual referencing is described and discussed. The co-sim approach is carried out using Advanced Design System (ADS) tool in time-domain where the power noise is directly injected to the power plane and its noise coupling impact on USB3.2 eye opening at the receiver end is then observed.","PeriodicalId":413776,"journal":{"name":"2022 International Conference on Electronics Packaging (ICEP)","volume":"130 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116264350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-11DOI: 10.23919/ICEP55381.2022.9795513
T. Kobayashi, K. Yamazaki, I. Shohji
In this study, the effect of the shape of Ni-Cu alloy electrodeposited films, which was changed by using different concentrations of Ni amidosulfate in a plating bath, on the joint strength of stainless steel/CFRTP and aluminum alloy/CFRTP lap joint specimens was investigated. A lap joint specimen with the stainless steel and CFRTP joined using the Ni-Cu alloy electrodeposited film made of 450 g/L Ni amidosulfate showed an average joint strength of 18.4 MPa, which is higher than any of the other conditions. The average joint strength of the aluminum alloy/CFRTP ranged from 7 to 10 MPa.
{"title":"Joining Dissimilar Materials Using Three-Dimensional Electrodeposited Film","authors":"T. Kobayashi, K. Yamazaki, I. Shohji","doi":"10.23919/ICEP55381.2022.9795513","DOIUrl":"https://doi.org/10.23919/ICEP55381.2022.9795513","url":null,"abstract":"In this study, the effect of the shape of Ni-Cu alloy electrodeposited films, which was changed by using different concentrations of Ni amidosulfate in a plating bath, on the joint strength of stainless steel/CFRTP and aluminum alloy/CFRTP lap joint specimens was investigated. A lap joint specimen with the stainless steel and CFRTP joined using the Ni-Cu alloy electrodeposited film made of 450 g/L Ni amidosulfate showed an average joint strength of 18.4 MPa, which is higher than any of the other conditions. The average joint strength of the aluminum alloy/CFRTP ranged from 7 to 10 MPa.","PeriodicalId":413776,"journal":{"name":"2022 International Conference on Electronics Packaging (ICEP)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114483828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-11DOI: 10.23919/ICEP55381.2022.9795476
A. Lujan
Copper hybrid bonding has been a topic in microelectronics packaging for years now, as it enables connections that provide more bandwidth at lower power. Although wafer-to-wafer hybrid bonding has been in use in the CMOS industry since 2016, wafer-to-wafer bonding is limited to creating stacks where the top and bottom die are the same size. With die-to-wafer (D2W) hybrid bonding, heterogeneous integration of different-sized chips is enabled. However, questions remain about the cost of implementing this process, where precise placement of each chip is necessary for high yields. This paper discusses the D2W hybrid bonding process and explore the cost and yield in various scenarios.
{"title":"Cost and Yield Analysis of Die-to-Wafer Hybrid Bonding","authors":"A. Lujan","doi":"10.23919/ICEP55381.2022.9795476","DOIUrl":"https://doi.org/10.23919/ICEP55381.2022.9795476","url":null,"abstract":"Copper hybrid bonding has been a topic in microelectronics packaging for years now, as it enables connections that provide more bandwidth at lower power. Although wafer-to-wafer hybrid bonding has been in use in the CMOS industry since 2016, wafer-to-wafer bonding is limited to creating stacks where the top and bottom die are the same size. With die-to-wafer (D2W) hybrid bonding, heterogeneous integration of different-sized chips is enabled. However, questions remain about the cost of implementing this process, where precise placement of each chip is necessary for high yields. This paper discusses the D2W hybrid bonding process and explore the cost and yield in various scenarios.","PeriodicalId":413776,"journal":{"name":"2022 International Conference on Electronics Packaging (ICEP)","volume":"55 8","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131922536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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