Pub Date : 2022-05-11DOI: 10.23919/ICEP55381.2022.9795386
Ken Zhang, V. Lin, David Lai, Yu-Po Wang
In this paper, a 22 x 22 mm package size AiP which is applied to 5G CPE and has air cavity between substrate and substrate was studied. The air cavity between substrate and substrate is connected by solder balls and control of its stand of height is important to keep antenna performance. But the AiP would have higher solder ball crack risk under reliability test due to larger package size than AiP applied in mobile device. Thus, stress simulation was performed to check high stress location of solder balls under thermal cycle test (TCT) of package level reliability (PLR) and drop test of board level reliability (BLR), and a solution of adding glues was proposed to reduce solder ball crack risk. Warpage simulation was also performed to check warpage performance. Stress simulation showed solder ball stress could be reduced about 30% and 6% for TCT and drop test conditions, respectively. And both reliability results with adding glues showed passed. For package warpage portion, warpage value and contour were close and similar between simulation and moiré measured results. Thus, adding glue was a successful solution to reduce stress and pass reliability tests.
{"title":"Warpage and Stress Simulation Analysis of Substrate on Substrate Antenna in Package (AiP) for 5G CPE Application","authors":"Ken Zhang, V. Lin, David Lai, Yu-Po Wang","doi":"10.23919/ICEP55381.2022.9795386","DOIUrl":"https://doi.org/10.23919/ICEP55381.2022.9795386","url":null,"abstract":"In this paper, a 22 x 22 mm package size AiP which is applied to 5G CPE and has air cavity between substrate and substrate was studied. The air cavity between substrate and substrate is connected by solder balls and control of its stand of height is important to keep antenna performance. But the AiP would have higher solder ball crack risk under reliability test due to larger package size than AiP applied in mobile device. Thus, stress simulation was performed to check high stress location of solder balls under thermal cycle test (TCT) of package level reliability (PLR) and drop test of board level reliability (BLR), and a solution of adding glues was proposed to reduce solder ball crack risk. Warpage simulation was also performed to check warpage performance. Stress simulation showed solder ball stress could be reduced about 30% and 6% for TCT and drop test conditions, respectively. And both reliability results with adding glues showed passed. For package warpage portion, warpage value and contour were close and similar between simulation and moiré measured results. Thus, adding glue was a successful solution to reduce stress and pass reliability tests.","PeriodicalId":413776,"journal":{"name":"2022 International Conference on Electronics Packaging (ICEP)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125692964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-11DOI: 10.23919/ICEP55381.2022.9795451
Shinyoun Park, Vinod Arjun Huddar
This paper addresses the limitations of simultaneous switching noise(SSN)simulation using loop-based power distribution network (PDN) model such as s-parameter in VDD-terminated DDR5 and proposes the simulation using partial element equivalent circuit(PEEC)-based PDN model for the system.
{"title":"Simultaneous Switching Noise Simulation in VDD-Terminated DDR5","authors":"Shinyoun Park, Vinod Arjun Huddar","doi":"10.23919/ICEP55381.2022.9795451","DOIUrl":"https://doi.org/10.23919/ICEP55381.2022.9795451","url":null,"abstract":"This paper addresses the limitations of simultaneous switching noise(SSN)simulation using loop-based power distribution network (PDN) model such as s-parameter in VDD-terminated DDR5 and proposes the simulation using partial element equivalent circuit(PEEC)-based PDN model for the system.","PeriodicalId":413776,"journal":{"name":"2022 International Conference on Electronics Packaging (ICEP)","volume":"464 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127002418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-11DOI: 10.23919/ICEP55381.2022.9795608
K. Takeuchi, T. Suga
Al2O3 is widely employed for electronics applications as an optical, dielectric, mechanical material, and its bonding has an important role to fabricate and package the devices. In the previous studies, it was reported that the sequential plasma activation bonding (SPAB) was an effective approach to enhance the bond strength of SiO2 materials at low temperature, but not for Al2O3. Therefore, we propose the low temperature sapphire bonding using SPAB by introducing SiO2 intermediate layers. For this, in this study, we investigate the applicability of SPAB to the deposited SiO2 layer on sapphire wafers by reactive sputtering. The SiO2 layer has a suitable surface smoothness and composition, which are comparable to the fused silica. The experimental result shows the applicability of SPAB to the sapphire bonding via SiO2 intermediate layer.
{"title":"Sequential Plasma Activation Bonding of Sapphire using SiO2 Intermediate Layer","authors":"K. Takeuchi, T. Suga","doi":"10.23919/ICEP55381.2022.9795608","DOIUrl":"https://doi.org/10.23919/ICEP55381.2022.9795608","url":null,"abstract":"Al<inf>2</inf>O<inf>3</inf> is widely employed for electronics applications as an optical, dielectric, mechanical material, and its bonding has an important role to fabricate and package the devices. In the previous studies, it was reported that the sequential plasma activation bonding (SPAB) was an effective approach to enhance the bond strength of SiO<inf>2</inf> materials at low temperature, but not for Al<inf>2</inf>O<inf>3</inf>. Therefore, we propose the low temperature sapphire bonding using SPAB by introducing SiO<inf>2</inf> intermediate layers. For this, in this study, we investigate the applicability of SPAB to the deposited SiO<inf>2</inf> layer on sapphire wafers by reactive sputtering. The SiO<inf>2</inf> layer has a suitable surface smoothness and composition, which are comparable to the fused silica. The experimental result shows the applicability of SPAB to the sapphire bonding via SiO<inf>2</inf> intermediate layer.","PeriodicalId":413776,"journal":{"name":"2022 International Conference on Electronics Packaging (ICEP)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125197549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-11DOI: 10.23919/ICEP55381.2022.9795507
M. Iioka, W. Kawanabe, I. Shohji, T. Kobayashi
In this study, fabrication of cellulose nano-fiber (CNF) composited Ni plating film was attempted by electroless method using the solution with added various wetting agents. The effects of wetting agents on morphology, composition and hardness of the obtained film were investigated. At the surface of the film obtained with anionic wetting agent, more CNF fixation was observed compared with that obtained without wetting agent, and with cationic or nonionic one. Also, hardness of the film obtained with anionic one increased in approximate 25% compared with that obtained without both CNF and wetting agent.
{"title":"Effect of Wetting Agent on Morphology of Cellulose Nano-Fiber Composited Nickel Electroless Plating Film","authors":"M. Iioka, W. Kawanabe, I. Shohji, T. Kobayashi","doi":"10.23919/ICEP55381.2022.9795507","DOIUrl":"https://doi.org/10.23919/ICEP55381.2022.9795507","url":null,"abstract":"In this study, fabrication of cellulose nano-fiber (CNF) composited Ni plating film was attempted by electroless method using the solution with added various wetting agents. The effects of wetting agents on morphology, composition and hardness of the obtained film were investigated. At the surface of the film obtained with anionic wetting agent, more CNF fixation was observed compared with that obtained without wetting agent, and with cationic or nonionic one. Also, hardness of the film obtained with anionic one increased in approximate 25% compared with that obtained without both CNF and wetting agent.","PeriodicalId":413776,"journal":{"name":"2022 International Conference on Electronics Packaging (ICEP)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124762446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-11DOI: 10.23919/ICEP55381.2022.9795387
T. Kobayashi, A. Kubo, I. Shohji
In this study, Ni-Cu electrodeposited film with three-dimensional structures was formed by controlling potential using a plating solution which is a mixture of Ni amidosulfate and Cu sulfate. When the concentration ratio of Ni amidosulfate to Cu sulfate was set to 150-450:15 (g/L) and the potential was set to -1.0 to -1.5 V, the electrodeposited film had dendritic morphology.
{"title":"Formation of Specially Shaped Plating Film by Nickel-Copper Alloy Electrodeposition","authors":"T. Kobayashi, A. Kubo, I. Shohji","doi":"10.23919/ICEP55381.2022.9795387","DOIUrl":"https://doi.org/10.23919/ICEP55381.2022.9795387","url":null,"abstract":"In this study, Ni-Cu electrodeposited film with three-dimensional structures was formed by controlling potential using a plating solution which is a mixture of Ni amidosulfate and Cu sulfate. When the concentration ratio of Ni amidosulfate to Cu sulfate was set to 150-450:15 (g/L) and the potential was set to -1.0 to -1.5 V, the electrodeposited film had dendritic morphology.","PeriodicalId":413776,"journal":{"name":"2022 International Conference on Electronics Packaging (ICEP)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123835534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-11DOI: 10.23919/ICEP55381.2022.9795398
Felix Steiner, H. Wurst, B. Leyrer, D. Ishikawa, H. Nakako, T. Blank
Soft silicone gels, as the standard potting materials for power electronic modules, provide little protection against water ingress and thus cannot protect the semiconductors inside the module from corrosion and edge termination breakdown. A novel vacuum assisted potting process employing an epoxy potting material and a thin-resin coat on the semiconductor should provide a significantly improved protection against water absorption indicated degradation. For validation, test modules were built up and tested in an HV-H3TRB environment.
{"title":"Reliability of Silicone and Epoxy Resin Encapsulated Power Modules in HV-H3TRB tests with Thin-Resin coated Dice","authors":"Felix Steiner, H. Wurst, B. Leyrer, D. Ishikawa, H. Nakako, T. Blank","doi":"10.23919/ICEP55381.2022.9795398","DOIUrl":"https://doi.org/10.23919/ICEP55381.2022.9795398","url":null,"abstract":"Soft silicone gels, as the standard potting materials for power electronic modules, provide little protection against water ingress and thus cannot protect the semiconductors inside the module from corrosion and edge termination breakdown. A novel vacuum assisted potting process employing an epoxy potting material and a thin-resin coat on the semiconductor should provide a significantly improved protection against water absorption indicated degradation. For validation, test modules were built up and tested in an HV-H3TRB environment.","PeriodicalId":413776,"journal":{"name":"2022 International Conference on Electronics Packaging (ICEP)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120953074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-11DOI: 10.23919/ICEP55381.2022.9795374
Y. Liu, C. Chen, M. Ueshima, T. Sakamoto, T. Naoe, H. Nishikawa, K. Suganuma
This study was carried out to systematically evaluate the reliability of Ag sinter joining in wide bandgap (WBG) power modules. SiC die-attached module by pressure¬less Ag joining was subjected to long-term high-temperature aging (250°C) as well as harsh thermal/cooling shock test (-50/250°C). Each measurement resulted in different degradation tendency of mechanical behaviors. The thermal aging process led to a modest declining rate from initial 43.92 MPa to 31.58MPa after 500h. While the bonding reliability was much more vulnerable to thermal shock cycles by firstly increased and then decreased to 29.38 MPa after 500 cycles. The mechanism for each kind of bonding strength deterioration was then investigated by comprehensive microstructure evolution.
{"title":"Reliability evaluation on Ag sintering die attach for SiC power modules during long-term thermal aging/cycling","authors":"Y. Liu, C. Chen, M. Ueshima, T. Sakamoto, T. Naoe, H. Nishikawa, K. Suganuma","doi":"10.23919/ICEP55381.2022.9795374","DOIUrl":"https://doi.org/10.23919/ICEP55381.2022.9795374","url":null,"abstract":"This study was carried out to systematically evaluate the reliability of Ag sinter joining in wide bandgap (WBG) power modules. SiC die-attached module by pressure¬less Ag joining was subjected to long-term high-temperature aging (250°C) as well as harsh thermal/cooling shock test (-50/250°C). Each measurement resulted in different degradation tendency of mechanical behaviors. The thermal aging process led to a modest declining rate from initial 43.92 MPa to 31.58MPa after 500h. While the bonding reliability was much more vulnerable to thermal shock cycles by firstly increased and then decreased to 29.38 MPa after 500 cycles. The mechanism for each kind of bonding strength deterioration was then investigated by comprehensive microstructure evolution.","PeriodicalId":413776,"journal":{"name":"2022 International Conference on Electronics Packaging (ICEP)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129579128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-11DOI: 10.23919/ICEP55381.2022.9795493
Y. Pai, Chan-yu Yeh, W. Teng, Andrew Kang, Yu-Po Wang
This study will explore the main influencing factors of copper surface roughness and the measurement methods for monitor copper surface morphology. As a result, we found that with the same copper surface roughness (Ra), delamination occurs between the copper surface of the substrate and solder mask, but the ratio of copper surface developing, SDR, of the two is significantly different. In this paper, we will discuss the main influencing factors of copper surface morphology, etching amount, the relationship between Ra and SDR, and discuss the difference between the measurement methods.
{"title":"Study of Measurement Index on the Polymer-to-Metal Direct-adhesion for Package Carrier","authors":"Y. Pai, Chan-yu Yeh, W. Teng, Andrew Kang, Yu-Po Wang","doi":"10.23919/ICEP55381.2022.9795493","DOIUrl":"https://doi.org/10.23919/ICEP55381.2022.9795493","url":null,"abstract":"This study will explore the main influencing factors of copper surface roughness and the measurement methods for monitor copper surface morphology. As a result, we found that with the same copper surface roughness (Ra), delamination occurs between the copper surface of the substrate and solder mask, but the ratio of copper surface developing, SDR, of the two is significantly different. In this paper, we will discuss the main influencing factors of copper surface morphology, etching amount, the relationship between Ra and SDR, and discuss the difference between the measurement methods.","PeriodicalId":413776,"journal":{"name":"2022 International Conference on Electronics Packaging (ICEP)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129687122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-11DOI: 10.23919/ICEP55381.2022.9795526
Shuaijie Zhao, Chuantong Chen, M. Ueshima, Motoharu Haga, K. Suganuma
Conventionally, copper and epoxy are bonded by roughening the copper surface. However, a roughed copper surface causes large resistance and delay when the frequency of current increases. Instead of roughing the surface, this work tried to use a self-assembled layer of 4- aminothiophenol (4-ATP) to bond copper and epoxy chemically. The influence of treatment time of copper in 4- APT solution was investigated. The best treatment time is 1 hour. Under this condition, the shear strength between copper and epoxy reached 24 MPa.
{"title":"Chemical bonding copper and epoxy through self-assembled layer","authors":"Shuaijie Zhao, Chuantong Chen, M. Ueshima, Motoharu Haga, K. Suganuma","doi":"10.23919/ICEP55381.2022.9795526","DOIUrl":"https://doi.org/10.23919/ICEP55381.2022.9795526","url":null,"abstract":"Conventionally, copper and epoxy are bonded by roughening the copper surface. However, a roughed copper surface causes large resistance and delay when the frequency of current increases. Instead of roughing the surface, this work tried to use a self-assembled layer of 4- aminothiophenol (4-ATP) to bond copper and epoxy chemically. The influence of treatment time of copper in 4- APT solution was investigated. The best treatment time is 1 hour. Under this condition, the shear strength between copper and epoxy reached 24 MPa.","PeriodicalId":413776,"journal":{"name":"2022 International Conference on Electronics Packaging (ICEP)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129795341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-11DOI: 10.23919/ICEP55381.2022.9795492
Subaru Tsujimura, M. Inoue
This work discusses interfacial electrical conductivity development between fillers in carbon nanotube (CNT)-filled electrically conductive pastes during curing. Interfacial electrical properties in these pastes were successfully analyzed using impedance spectroscopy. Because the equivalent circuit analysis showed a change in interfacial capacitance during curing, binder chemistry was clarified to be one of the factors in accelerating the kinetics of the interfacial conductivity development.
{"title":"Electrical Conductivity Development of Carbon Nanotube Filled Electrically Conductive Pates During Curing","authors":"Subaru Tsujimura, M. Inoue","doi":"10.23919/ICEP55381.2022.9795492","DOIUrl":"https://doi.org/10.23919/ICEP55381.2022.9795492","url":null,"abstract":"This work discusses interfacial electrical conductivity development between fillers in carbon nanotube (CNT)-filled electrically conductive pastes during curing. Interfacial electrical properties in these pastes were successfully analyzed using impedance spectroscopy. Because the equivalent circuit analysis showed a change in interfacial capacitance during curing, binder chemistry was clarified to be one of the factors in accelerating the kinetics of the interfacial conductivity development.","PeriodicalId":413776,"journal":{"name":"2022 International Conference on Electronics Packaging (ICEP)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129885691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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