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Photon-by-photon quantum light state engineering 光子对光子量子光态工程
IF 11.7 1区 物理与天体物理 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-06-01 DOI: 10.1016/j.pquantelec.2022.100414
Nicola Biagi, Saverio Francesconi, Alessandro Zavatta, Marco Bellini

The ability to manipulate light at the level of single photons, its elementary excitation quanta, has recently made it possible to produce a rich variety of tailor-made quantum states and arbitrary quantum operations, of high interest for fundamental science and applications. Here we present a concise review of the progress made over the last few decades in the engineering of quantum light states. Although far from exhaustive, this review aims at providing a sufficiently wide and updated introduction that may serve as the entry point to such a fascinating and rapidly evolving field.

在单光子水平上操纵光的能力,它的基本激发量子,最近使得产生丰富多样的定制量子态和任意量子操作成为可能,这对基础科学和应用具有很高的兴趣。在这里,我们简要回顾了过去几十年来在量子光态工程方面取得的进展。虽然远非详尽无遗,但本综述的目的是提供一个足够广泛和最新的介绍,可以作为这样一个迷人和快速发展的领域的切入点。
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引用次数: 4
Visible solid-state lasers based on Pr3+ and Tb3+ 基于Pr3+和Tb3+的可见固体激光器
IF 11.7 1区 物理与天体物理 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-06-01 DOI: 10.1016/j.pquantelec.2022.100411
Hiroki Tanaka , Sascha Kalusniak , Moritz Badtke , Maxim Demesh , Nikolai V. Kuleshov , Fumihiko Kannari , Christian Kränkel
<div><p>Visible lasers are sought for in a variety of applications. They are required in fields as diverse as medicine, materials processing, display and entertainment technology and many others. Moreover, in contrast to infrared lasers, they enable very simple and efficient access to the UV spectral range by a single frequency doubling step. Currently, the choice of direct visibly emitting lasers is limited: The ‘green gap’ prohibits the development of semiconductor lasers with emission in the green and yellow spectral range and only few laser active ions allow for efficient visible lasing. In particular trivalent praseodymium (Pr<sup>3+</sup>) and terbium (Tb<sup>3+</sup>) ions have been shown to be the most successful candidates for efficient high power visible solid-state lasers. Compared to semiconductor lasers, solid-state lasers also provide other advantages, <em>e.g.</em>, in terms of energy storage in Q-switched operation as well as beam quality at high output power.</p><p>In recent years, visibly emitting solid-state lasers have seen a revival enabled by the increasing commercial availability of GaN-based blue emitting pump diodes and an ever-increasing number of publications evidences the vivid research activities in this field. Still, due to the relatively short history of diode-pumped visible solid-state lasers, these are still in an early stage of their development and up to now only few direct visibly emitting solid-state lasers with comparably low output power are commercially available. However, we are convinced that visibly emitting solid-state lasers based on Pr<sup>3+</sup> and Tb<sup>3+</sup> have the potential for 100-W-class continuous wave output power levels as well as sub-ns pulse durations in Q-switched and sub-ps-pulse durations in mode-locked operation, which would qualify them to fulfil the requirements of most of the applications named above.</p><p>In this work, we review the state of the art of continuous wave and pulsed visibly emitting solid-state lasers and amplifiers based on Pr<sup>3+</sup> and Tb<sup>3+</sup> as the active ion. After an introduction, we briefly review the spectroscopic properties of these two ions and their particularities for laser operation as well as the requirements for suitable host materials. In the third chapter, we present the state of the art in the field of continuous wave Pr<sup>3+</sup>-lasers emitting in the cyan-blue, green, orange, red, and deep-red spectral range based on fluoride, glass, and oxide host materials and discuss prospects for further power scaling. The fourth chapter is devoted to the current state of Tb<sup>3+</sup>-based continuous wave green and yellow emitting solid-state lasers. In the fifth and sixth chapter we give an overview over existing pulsed visibly emitting solid-state lasers in Q-switched and mode-locked operation mode, respectively. Finally, the seventh chapter is devoted to pulse amplifiers for ultrafast visible lasers before this review closes wi
可见激光被用于各种各样的应用。他们需要在不同的领域,如医药,材料加工,显示和娱乐技术等。此外,与红外激光器相比,它们通过单个频率加倍步骤可以非常简单有效地访问紫外光谱范围。目前,直接可见发射激光器的选择是有限的:“绿隙”阻碍了半导体激光器在绿色和黄色光谱范围内发射的发展,只有少数激光活性离子允许有效的可见激光。特别是三价镨(Pr3+)和铽(Tb3+)离子已被证明是高效高功率可见固体激光器最成功的候选者。与半导体激光器相比,固态激光器还具有其他优点,例如,在调q操作中的能量存储以及高输出功率下的光束质量。近年来,由于氮化镓基蓝色发射泵浦二极管的商业可用性不断提高,可见发射固体激光器得到了复兴,越来越多的出版物证明了这一领域的生动研究活动。尽管如此,由于二极管泵浦可见固体激光器的历史相对较短,这些仍处于发展的早期阶段,到目前为止,只有少数具有相对低输出功率的直接可见发射固体激光器在商业上可用。然而,我们确信,基于Pr3+和Tb3+的可见发射固体激光器具有100 w级连续波输出功率水平的潜力,以及在q开关时的亚ns脉冲持续时间和锁模操作时的亚ps脉冲持续时间,这将使它们有资格满足上述大多数应用的要求。在这项工作中,我们回顾了基于Pr3+和Tb3+作为活性离子的连续波和脉冲可见发射固体激光器和放大器的最新进展。本文简要介绍了这两种离子的光谱特性及其在激光操作中的特殊性,以及对合适的基体材料的要求。在第三章中,我们介绍了基于氟化物、玻璃和氧化物主体材料的在蓝绿色、绿色、橙色、红色和深红色光谱范围内发射的连续波Pr3+激光器领域的最新进展,并讨论了进一步功率缩放的前景。第四章研究了基于Tb3+的连续波绿黄发射固体激光器的现状。在第五章和第六章中,我们分别概述了在调q和锁模工作模式下现有的脉冲可见发射固体激光器。最后,第七章专门介绍了用于超快可见激光器的脉冲放大器,然后以简短的结论结束本文的回顾。
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引用次数: 13
Quantum non-Gaussianity of light and atoms 光和原子的量子非高斯性
IF 11.7 1区 物理与天体物理 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-05-01 DOI: 10.1016/j.pquantelec.2022.100395
Lukáš Lachman, Radim Filip

Quantum non-Gaussian states of photons and phonons are conclusive and direct witnesses of higher-than-quadratic nonlinearities in optical and mechanical processes. Moreover, they are proven resources for quantum sensing, communication and error correction with diverse continuous-variable systems. This review introduces theoretical analyses of nonclassical and quantum non-Gaussian states of photons and phonons. It recapitulates approaches used to derive operational criteria for photons tolerant to optical losses, their application in experiments and their nowadays extension to quantum non-Gaussian photon coincidences. It extends to a recent comparison of quantum non-Gaussianity, including robustness to thermal noise, and sensing capability for high-quality phononic Fock states of single trapped cooled ions. The review can stimulate further development in the criteria of quantum non-Gaussian states and experimental effort to prepare and detect such useful features, navigating the community to advanced quantum physics and technology.

光子和声子的量子非高斯态是光学和机械过程中高二次非线性的决定性和直接见证。此外,它们是各种连续变量系统的量子传感,通信和纠错的成熟资源。本文介绍了光子和声子的非经典态和量子非高斯态的理论分析。它概述了用于导出光损失耐受光子的操作准则的方法,它们在实验中的应用以及它们现在在量子非高斯光子巧合中的扩展。它扩展到最近的量子非高斯性的比较,包括对热噪声的鲁棒性,以及对单个捕获的冷却离子的高质量声子Fock态的传感能力。这篇综述可以刺激量子非高斯态标准的进一步发展,以及准备和检测这些有用特征的实验努力,引导社区走向先进的量子物理和技术。
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引用次数: 7
Evolution of optical wireless communication for B5G/6G B5G/6G光无线通信的发展
IF 11.7 1区 物理与天体物理 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-05-01 DOI: 10.1016/j.pquantelec.2022.100398
Zixian Wei , Zhaoming Wang , Jianan Zhang , Qian Li , Junping Zhang , H.Y. Fu

The research on optical wireless communication (OWC) has been going on for more than two decades. Particularly, visible light communication (VLC), as a means of OWC combining communication with illumination, has been regarded as a promising indoor high-speed wireless approach for short-distance access. Recently, lightwave, millimeter-wave (mmWave), terahertz (THz) and other spectrum mediums are considered as potential candidates for beyond fifth-generation/sixth-generation (B5G/6G) mobile communication networks. On the basis of previous studies, this review focuses on revealing how the research of next-generation OWC technology should be carried out to meet the requirements of B5G/6G for practical deployment. The research, development and engineering transformation of the OWC systems are a paragon of interdisciplinary. It involves a wide discussion on how to build a high-speed, multi-user, full-duplex, white-light OWC system based on existing technologies by showing the innovations and trade-offs at various levels with material, device, air-interface technology, system and network architecture. The compatibility of OWC is emphasized and some advanced heterogeneous OWC systems are presented, which involves the combination or integration of various functions such as sensing, near-infrared (NIR) beam-steering, positioning and coexistence with radio frequency (RF) communication. Finally, several potential directions are pointed out for the actual engineering deployment in the B5G/6G era.

光无线通信(OWC)的研究已经进行了二十多年。特别是可见光通信(VLC)作为一种通信与照明相结合的光通信方式,被认为是一种很有前途的室内高速无线短距离接入方式。最近,光波、毫米波(mmWave)、太赫兹(THz)等频谱介质被认为是超越第五代/第六代(B5G/6G)移动通信网络的潜在候选者。本文在总结前人研究的基础上,重点探讨如何开展下一代OWC技术的研究,以满足B5G/6G实际部署的要求。OWC系统的研究、开发和工程改造是跨学科的典范。通过展示材料、器件、空口技术、系统和网络架构在各个层面上的创新和权衡,广泛讨论了如何在现有技术的基础上构建高速、多用户、全双工、白光OWC系统。强调了无线通信的兼容性,提出了一些先进的异构无线通信系统,这些系统包括传感、近红外(NIR)波束导向、定位以及与射频通信共存等多种功能的组合或集成。最后,指出了B5G/6G时代实际工程部署的几个潜在方向。
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引用次数: 19
Recent developments on polariton lasers 极化子激光器的最新进展
IF 11.7 1区 物理与天体物理 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-05-01 DOI: 10.1016/j.pquantelec.2022.100399
Long Zhang , Jiaqi Hu , Jinqi Wu , Rui Su , Zhanghai Chen , Qihua Xiong , Hui Deng

Semiconductor lasers are ubiquitous in modern science and technology for they are compact, fast, and efficient. They require relatively low power and thus are well suited for applications in the information technology. However, in conventional semiconductor lasers, the power required to reach the lasing threshold has a fundamental lower bound determined by the carrier density required to reach population inversion, or the transparency condition. This limitation can be overcome in a new type of laser, a polariton laser, which operates under a different mechanism. Coherent light emission from a polariton laser results from a polariton condensate, which is a coherent, thermodynamically favored many-body state, formed at a much lower carrier density than the population inversion density. Furthermore, since polaritons are matter-light hybrid modes formed via strong coupling between excitons and cavity photons, polariton lasers can be controlled via both the photon and exciton components, allowing greater flexibility in tuning and controlling the mode properties. These prospects have propelled intense research effort on polariton lasers in the past few decades. In this article, we will first review the essential properties of polaritons and polariton lasers, followed by recent developments on polariton lasers with unconventional properties and functionalities, and on new material platforms where room temperature polariton lasers have been demonstrated. We will conclude with a brief discussion on prospects of practical applications of polariton lasers.

半导体激光器结构紧凑、速度快、效率高,在现代科学技术中无处不在。它们需要相对较低的功率,因此非常适合信息技术中的应用。然而,在传统的半导体激光器中,达到激光阈值所需的功率有一个基本的下界,由达到人口反转所需的载流子密度或透明度条件决定。这一限制可以在一种新型激光器中克服,即在不同机制下工作的极化子激光器。极化子激光器的相干光发射来自于极化子凝聚体,这是一种相干的、热力学上有利的多体态,形成于比居群反转密度低得多的载流子密度下。此外,由于极化子是通过激子和腔光子之间的强耦合形成的物质-光混合模式,极化子激光器可以通过光子和激子组分来控制,从而在调谐和控制模式特性方面具有更大的灵活性。在过去的几十年里,这些前景推动了对极化激子激光器的大量研究。在本文中,我们将首先回顾极化子和极化子激光器的基本性质,然后介绍具有非常规性质和功能的极化子激光器的最新发展,以及在室温极化子激光器的新材料平台上的发展。最后,我们将简要讨论极化激子激光器的实际应用前景。
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引用次数: 4
Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors 基于超宽带隙半导体的光电和微电子器件的最新进展
IF 11.7 1区 物理与天体物理 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-05-01 DOI: 10.1016/j.pquantelec.2022.100397
Jialin Yang , Kewei Liu , Xing Chen , Dezhen Shen

Owing to their novel physical properties, semiconductors have penetrated almost every corner of the contemporary industrial system. Nowadays, semiconductor materials and their microelectronic and optoelectronic devices are widely used in civil and military fields. Recently, ultrawide-bandgap (UWBG) semiconductors with bandgaps considerably wider than 3.4 ​eV of GaN, such as aluminium gallium nitride (AlGaN), gallium oxide (Ga2O3), and diamond, have attracted increasing attention due to their advantages, including high breakdown field, high stability, and high radiation resistance. In this review, recent research pertaining to UWBG semiconductors in optoelectronics and microelectronics is introduced. Moreover, the challenges and opportunities of UWBG semiconductors are deliberated. It is expected that this review will provide inspiration and insights for further related research.

由于其新颖的物理特性,半导体已经渗透到现代工业系统的几乎每一个角落。目前,半导体材料及其微电子和光电子器件在民用和军事领域得到了广泛的应用。近年来,氮化镓铝(AlGaN)、氧化镓(Ga2O3)、金刚石等带隙明显大于3.4 eV的超宽带隙(UWBG)半导体因其具有高击穿场、高稳定性和高抗辐射性等优点而受到越来越多的关注。本文综述了近年来在光电子学和微电子学领域有关超宽带半导体的研究进展。此外,还讨论了UWBG半导体面临的挑战和机遇。希望本文的综述能够为进一步的相关研究提供启示和见解。
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引用次数: 27
Advances in single crystals and thin films of chiral hybrid metal halides 手性杂化金属卤化物单晶及薄膜研究进展
IF 11.7 1区 物理与天体物理 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-03-01 DOI: 10.1016/j.pquantelec.2022.100375
Zhihang Guo , Junzi Li , Rui Chen , Tingchao He

Chiral organic–inorganic hybrid metal halides (HMHs), as an emerging class of chiral semiconductor materials, have attracted unparalleled interest from multi-purpose perspectives, as a result of their easily accessible solution-grown methods, plentiful chemical structure and composition, as well as unique and exciting optoelectronic properties. Recently, substantial progress has been made in the synthesis of chiral HMHs, spectroscopic characterization and fabrication of optoelectronic devices. Although several reviews about the chiroptical properties and applications of chiral HMHs have been published, the comprehensive summary of the basic structural frameworks, fundamental physics and strategies for the modulation of optical activity, which are vital for the design of chiral HMHs and development of relevant optoelectronic applications, are still insufficient. In this review, we summarize the research progress from fundamentals to applications for the single crystals and thin films of chiral HMHs that are conducive to the development of practical optoelectronic devices. First, diverse structural frameworks and synthetic methods of chiral HMHs are systematically summarized. Afterward, fundamental physics and strategies for the modulation of optical activity as well as their related optoelectronic applications are comprehensively reviewed. Finally, we put forward the current challenges in this rapidly evolving field and present an outlook on future prospects to further develop chiral HMHs for various applications.

手性有机-无机杂化金属卤化物(HMHs)作为一类新兴的手性半导体材料,由于其易于获得的溶液生长方法、丰富的化学结构和成分以及独特而令人兴奋的光电性能,在多用途方面引起了人们的极大兴趣。近年来,手性高分子量聚合物的合成、光谱学表征以及光电器件的制造等方面都取得了长足的进展。虽然对手性高分子量聚合物的旋光性质和应用进行了一些综述,但对其基本结构框架、基本物理和光学活性调制策略的综合总结对于手性高分子量聚合物的设计和相关光电应用的发展至关重要。本文综述了手性高分子量聚合物单晶和薄膜从基础到应用的研究进展,这些研究有助于开发实用的光电器件。首先,系统总结了手性高分子量聚合物的各种结构框架和合成方法。然后,对光学活性调制的基本物理和策略及其相关的光电应用进行了全面的综述。最后,我们提出了这一快速发展的领域目前面临的挑战,并展望了未来进一步开发手性高分子材料的前景。
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引用次数: 6
A review of ptychographic techniques for ultrashort pulse measurement 超短脉冲测量的体表技术综述
IF 11.7 1区 物理与天体物理 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-01-01 DOI: 10.1016/j.pquantelec.2021.100364
Daniel J. Kane, Andrei B. Vakhtin

The measurement of optical ultrafast laser pulses is done indirectly because the required bandwidth to measure these pulses exceeds the bandwidth of current electronics. As a result, this measurement problem is often posed as a 1-D phase retrieval problem, which is fraught with ambiguities. The phase retrieval method known as ptychography solves this problem by making it possible to measure ultrafast pulses in either the time domain or the frequency domain. One well known algorithm is the principal components generalized projections algorithm (PCGPA) for extracting pulses from Frequency-Resolved Optical Gating (FROG) measurements. Here, we discuss the development of the PCPGA and introduce new developments including an operator formalism that allows for the convenient addition of external constraints and the development of more robust algorithms. A close cousin, the ptychographic iterative engine will also be covered and compared to the PCGPA. Additional developments using other algorithmic strategies will also be discussed along with new developments combining optics and high-speed electronics to achieve megahertz measurement rates.

光学超快激光脉冲的测量是间接完成的,因为测量这些脉冲所需的带宽超过了当前电子设备的带宽。因此,这种测量问题通常被提出为一维相位恢复问题,这充满了歧义。相位恢复方法被称为ptychography,通过在时域或频域测量超快脉冲成为可能,解决了这个问题。从频分辨光门控(FROG)测量中提取脉冲的一种常用算法是主成分广义投影算法(PCGPA)。在这里,我们讨论了PCPGA的发展,并介绍了新的发展,包括允许方便地添加外部约束的算子形式化和开发更健壮的算法。一个近亲,原型迭代引擎也将被介绍并与PCGPA进行比较。还将讨论使用其他算法策略的其他发展,以及结合光学和高速电子技术以实现兆赫测量速率的新发展。
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引用次数: 3
On the principle operation of tunneling injection quantum dot lasers 隧道注入量子点激光器的工作原理
IF 11.7 1区 物理与天体物理 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-01-01 DOI: 10.1016/j.pquantelec.2021.100362
Igor Khanonkin , Sven Bauer , Vissarion Mikhelashvili , Ori Eyal , Michael Lorke , Frank Jahnke , Johann Peter Reithmaier , Gadi Eisenstein

The concept of tunneling injection was introduced in the 1990's to improve the dynamical properties of semiconductor lasers by avoiding the problem of hot carrier injection which increase the gain nonlinearity and hence limit the modulation capabilities. Indeed, tunneling injection led to record modulation speeds in quantum well lasers. Employing tunneling injection in quantum dot lasers is significantly more complicated. Tunneling injection is based on an energy band alignment between a carrier reservoir and the active region where laser oscillation takes place. However, the inherent inhomogeneity of self-assembled quantum dots prevents an unequivocal band alignment and can cause the tunneling injection process to actually deteriorate the laser performance compared to nominally identical quantum dot lasers that have no tunneling section. Understanding the complex process of tunneling injection in quantum dot lasers requires a comprehensive study where different aspects are analyzed theoretically and experimentally. In this paper we describe the technology of such lasers in the InP material system followed by a microscopic analysis of the detailed electrical characterization which is correlated to the electro-optic properties yields information about the exact carrier transport mechanism at bias levels of almost zero to well above threshold. A tunneling injection quantum dot optical amplifier was used for multi wavelength pump probe characterization from which it is clear why tunneling injection often deteriorates laser performance and determines how to design a structure which can take advantage of tunneling injection. Finally, we present a direct comparison between the modulation response of a tunneling injection quantum dot laser and a twin structure that has no tunneling injection section.

The broad study sheds light on the fundamental tunneling injection process that can guide the design of an optimum laser where tunneling injection will be taken full advantage of and will improve the dynamical properties.

隧道注入的概念是在20世纪90年代提出的,旨在通过避免热载流子注入增加增益非线性从而限制调制能力的问题来改善半导体激光器的动态特性。事实上,隧穿注入导致了量子阱激光器中调制速度的记录。在量子点激光器中使用隧道注入要复杂得多。隧穿注入是基于载流子储层和发生激光振荡的有源区域之间的能带对准。然而,自组装量子点固有的不均匀性阻止了明确的波段对准,并且与没有隧道段的名义上相同的量子点激光器相比,隧道注入过程实际上会降低激光器的性能。理解量子点激光器中隧穿注入的复杂过程需要从理论和实验两方面进行综合研究。在本文中,我们描述了这种激光器在InP材料系统中的技术,然后对与电光特性相关的详细电学特性进行了微观分析,得出了在几乎为零到远高于阈值的偏置水平下有关精确载流子输运机制的信息。利用隧道注入量子点光放大器对多波长泵浦探针进行了表征,从而明确了隧道注入导致激光器性能恶化的原因,并决定了如何设计一种能充分利用隧道注入的结构。最后,我们直接比较了隧穿注入量子点激光器和没有隧穿注入段的孪晶结构的调制响应。这项广泛的研究揭示了隧道注入的基本过程,可以指导设计最佳的激光器,充分利用隧道注入并改善其动力学性能。
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引用次数: 6
Structured photoionization bands of alkali diatomic molecules 碱双原子分子的结构光离带
IF 11.7 1区 物理与天体物理 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-01-01 DOI: 10.1016/j.pquantelec.2021.100365
Goran Pichler

We present a review on the photoionization bands that can be found in the far ultraviolet part of the spectrum using all sapphire cells in absorption experiments with hot alkali vapor. We describe cesium and rubidium dimers which have very pronounced photoionization bands together with bialkali mixtures like KCs and RbCs. We explain the origin of these peculiar bands as special molecular transitions between the ground state of the neutral molecule and exited states of the ionized molecule as a direct ionization process. We also described the diffuse bands as transition from the same ground state molecule to doubly excited molecular state, as an indirect ionization process. Finally, we believe that these two pathways may interfere resulting in a complex structure revealing the observed diffuse bands.

本文综述了所有蓝宝石电池在热碱蒸气吸收实验中在远紫外光谱中发现的光电离带。我们描述了具有非常明显的光离带的铯和铷二聚体,以及双碱混合物,如KCs和红细胞。我们解释了这些特殊带的起源,作为中性分子基态和电离分子激发态之间的特殊分子跃迁,作为直接电离过程。我们还描述了从相同基态分子到双激发态分子的过渡,作为间接电离过程。最后,我们认为这两种途径可能会相互干扰,导致一个复杂的结构显示所观察到的漫反射带。
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引用次数: 0
期刊
Progress in Quantum Electronics
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