Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004065
V. Polyakov, F. Schwierz
In this paper we investigate the intrinsic drain current noise in nanometer double-gate MOSFETs by 2D ensemble Monte Carlo device simulator (for temporal sampling of the current) and autocorrelation analysis (to obtain the frequency characteristics of the noise). We have considered the noise behavior of transistors at different doping levels in the source and drain regions and for different drain biases. It is shown, that the drain current fluctuations drastically increase in magnitude at high dopings of the source and drain regions and at large drain biases. The relation between plasma oscillations developed in highly doped transistor regions and noise behavior is discussed.
{"title":"Monte Carlo study of drain current noise in nano-scaled MOSFETs","authors":"V. Polyakov, F. Schwierz","doi":"10.1109/ICCDCS.2002.1004065","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004065","url":null,"abstract":"In this paper we investigate the intrinsic drain current noise in nanometer double-gate MOSFETs by 2D ensemble Monte Carlo device simulator (for temporal sampling of the current) and autocorrelation analysis (to obtain the frequency characteristics of the noise). We have considered the noise behavior of transistors at different doping levels in the source and drain regions and for different drain biases. It is shown, that the drain current fluctuations drastically increase in magnitude at high dopings of the source and drain regions and at large drain biases. The relation between plasma oscillations developed in highly doped transistor regions and noise behavior is discussed.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134408987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004081
C. Wulff, T. Ytterdal, T.A. Saethre, A. Skjelvan, T. Fjeldly, M. Shur
In this paper, we describe the development and use of a remotely operated laboratory based on Microsoft .NET technology. The Next Generation Lab combines the latest in Web technology with standard industrial instruments to make a cost effective solution for education in the field of analog CMOS integrated circuits.
{"title":"Next Generation Lab-a solution for remote characterization of analog integrated circuits","authors":"C. Wulff, T. Ytterdal, T.A. Saethre, A. Skjelvan, T. Fjeldly, M. Shur","doi":"10.1109/ICCDCS.2002.1004081","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004081","url":null,"abstract":"In this paper, we describe the development and use of a remotely operated laboratory based on Microsoft .NET technology. The Next Generation Lab combines the latest in Web technology with standard industrial instruments to make a cost effective solution for education in the field of analog CMOS integrated circuits.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114175507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004061
F. F. Flores Gracia, M. Aceves, J. Carrillo, C. Domínguez, C. Falcony
In this work, photoluminescence (PL) and cathodoluminescence (CL) of silicon oxide films implanted with silicon were investigated. Thermal oxide and silicon rich oxide obtained by LPCVD films and both implanted with silicon (SITO and SISRO) were studied. The results show that SISRO radiates in the same wavelength as SITO, but with higher intensity. In addition, it is shown that PL and CL bands are not only related to the Si-excess of the films. The PL of the silicon rich oxide is the highest reported to date. The results show that an optimum annealing time exists to produce the highest luminescence intensity. It is proposed that in these materials, the radiation allowed should be confined between 1.4 and 3 eV.
{"title":"PL and CL emissions in thermal oxide and silicon rich oxide films implanted with silicon","authors":"F. F. Flores Gracia, M. Aceves, J. Carrillo, C. Domínguez, C. Falcony","doi":"10.1109/ICCDCS.2002.1004061","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004061","url":null,"abstract":"In this work, photoluminescence (PL) and cathodoluminescence (CL) of silicon oxide films implanted with silicon were investigated. Thermal oxide and silicon rich oxide obtained by LPCVD films and both implanted with silicon (SITO and SISRO) were studied. The results show that SISRO radiates in the same wavelength as SITO, but with higher intensity. In addition, it is shown that PL and CL bands are not only related to the Si-excess of the films. The PL of the silicon rich oxide is the highest reported to date. The results show that an optimum annealing time exists to produce the highest luminescence intensity. It is proposed that in these materials, the radiation allowed should be confined between 1.4 and 3 eV.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114179882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004077
J. Font-Rosselló, J. Ginard, E. Isern, M. Roca, E. Garcia
A new digital BIST for OAs embedded in mixed-signal circuits is proposed in this paper. During test mode, the transient response of the OA under test shall be measured in order to detect any deviation of the overshoot with respect to the fault-free circuit. The overshoot of the transient response is a very sensitive parameter and can be easily obtained by sampling at a particular time. The analog test stimuli signal can be easily generated by means of a current sink made of a single PMOS transistor. The test decision block is purely digital, with only two TDM comparators, two flip-flops and some logical circuitry just to compare fault-free and CUT two-bit signatures. Simulation results show the effectiveness of the proposed technique with low area overhead.
{"title":"A digital BIST for opamps embedded in mixed-signal circuits by analysing the transient response","authors":"J. Font-Rosselló, J. Ginard, E. Isern, M. Roca, E. Garcia","doi":"10.1109/ICCDCS.2002.1004077","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004077","url":null,"abstract":"A new digital BIST for OAs embedded in mixed-signal circuits is proposed in this paper. During test mode, the transient response of the OA under test shall be measured in order to detect any deviation of the overshoot with respect to the fault-free circuit. The overshoot of the transient response is a very sensitive parameter and can be easily obtained by sampling at a particular time. The analog test stimuli signal can be easily generated by means of a current sink made of a single PMOS transistor. The test decision block is purely digital, with only two TDM comparators, two flip-flops and some logical circuitry just to compare fault-free and CUT two-bit signatures. Simulation results show the effectiveness of the proposed technique with low area overhead.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114710039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004023
L. Matejicek, K. Vrba, T. Dostál
In the paper a generalized approach is published with the help of which the sensitivities of frequency filters can by determined. This method of sensitivity calculation is particularly suitable for comparing the sensitivity characteristics of filters from the viewpoint of sensitivity to all the parameters. The approach is used at the juxtaposition of the sensitivity characteristics of two new sixth-order all-pass filters with OTA.
{"title":"Sixth-order all-pass filters with OTAs and their characteristics","authors":"L. Matejicek, K. Vrba, T. Dostál","doi":"10.1109/ICCDCS.2002.1004023","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004023","url":null,"abstract":"In the paper a generalized approach is published with the help of which the sensitivities of frequency filters can by determined. This method of sensitivity calculation is particularly suitable for comparing the sensitivity characteristics of filters from the viewpoint of sensitivity to all the parameters. The approach is used at the juxtaposition of the sensitivity characteristics of two new sixth-order all-pass filters with OTA.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"2017 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121409933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004041
R. Siemieniec, W. Sudkamp, J. Lutz
Irradiation techniques are widely used for carrier lifetime control in power devices. Improvements of irradiated devices were usually realized by a number of experiments. The use of an extended recombination model allows improved device simulations which explain the temperature dependencies of stationary and dynamical characteristics. Due to that progress device simulation is able to support development and optimization of irradiated devices.
{"title":"Applying device simulation for lifetime-controlled devices","authors":"R. Siemieniec, W. Sudkamp, J. Lutz","doi":"10.1109/ICCDCS.2002.1004041","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004041","url":null,"abstract":"Irradiation techniques are widely used for carrier lifetime control in power devices. Improvements of irradiated devices were usually realized by a number of experiments. The use of an extended recombination model allows improved device simulations which explain the temperature dependencies of stationary and dynamical characteristics. Due to that progress device simulation is able to support development and optimization of irradiated devices.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125851798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004101
C. Cavallaro, A. Raciti, A. Torrisi, G. Chimento
High reliability is expected today from photo voltaic (PV) systems since they are devoted to specific applications where the power grid is not available, or the cost of the energy produced by diesel power station is high due to the transportation cost of the fuel. As for any complicated equipment, a scheduled maintenance can improve the reliability. In this paper it is shown how a monitored power plant can increase its reliability by reducing the complexity of the transmission system as well as by managing the power plant components from a remote control location. A physical scaled simulator has been realized and several tests have been performed. An actual power plant located in a small island in the Mediterranean Sea is also discussed as a case study.
{"title":"Reliability improvement of photo voltaic power conversion systems by an optimal remote-management controller","authors":"C. Cavallaro, A. Raciti, A. Torrisi, G. Chimento","doi":"10.1109/ICCDCS.2002.1004101","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004101","url":null,"abstract":"High reliability is expected today from photo voltaic (PV) systems since they are devoted to specific applications where the power grid is not available, or the cost of the energy produced by diesel power station is high due to the transportation cost of the fuel. As for any complicated equipment, a scheduled maintenance can improve the reliability. In this paper it is shown how a monitored power plant can increase its reliability by reducing the complexity of the transmission system as well as by managing the power plant components from a remote control location. A physical scaled simulator has been realized and several tests have been performed. An actual power plant located in a small island in the Mediterranean Sea is also discussed as a case study.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"2014 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128229638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004027
M. Estrada, A. Cerdeira, A. Ortiz-Conde, F. García, B. Iñíguez
A unified procedure is presented to extract above-threshold model parameters in polysilicon and a-Si:H TFTs. It is based on the integration of the experimental data current, which has the advantage of reducing the effects of experimental noise. This method is applied to the linear and saturation regions for the above-threshold regime and allows the extraction of all the above-threshold parameters. We already presented a similar method applied to a-Si:H TFTs. In this work it is demonstrated that in the above-threshold regimen the mobility of polysilicon TFTs can be modeled also as a function of the gate voltage to the n power and a similar integration procedure can be used to extract the device modeling parameters. The unified extraction procedure provides in addition the possibility of monitoring the crystallization process of a-Si:H TFTs into polysilicon, which has become a widely used process of fabricating low temperature polysilicon TFTs. The process of polycrystallization manifests itself by a variation and change in sign of one of the model parameters. Extracted parameters can be introduced in AIMSpice circuit simulator for device modeling. The accuracy of the simulated curves using the extracted parameters is verified with measured.
{"title":"Unified extraction method for amorphous and polycrystalline TFT above threshold model parameters","authors":"M. Estrada, A. Cerdeira, A. Ortiz-Conde, F. García, B. Iñíguez","doi":"10.1109/ICCDCS.2002.1004027","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004027","url":null,"abstract":"A unified procedure is presented to extract above-threshold model parameters in polysilicon and a-Si:H TFTs. It is based on the integration of the experimental data current, which has the advantage of reducing the effects of experimental noise. This method is applied to the linear and saturation regions for the above-threshold regime and allows the extraction of all the above-threshold parameters. We already presented a similar method applied to a-Si:H TFTs. In this work it is demonstrated that in the above-threshold regimen the mobility of polysilicon TFTs can be modeled also as a function of the gate voltage to the n power and a similar integration procedure can be used to extract the device modeling parameters. The unified extraction procedure provides in addition the possibility of monitoring the crystallization process of a-Si:H TFTs into polysilicon, which has become a widely used process of fabricating low temperature polysilicon TFTs. The process of polycrystallization manifests itself by a variation and change in sign of one of the model parameters. Extracted parameters can be introduced in AIMSpice circuit simulator for device modeling. The accuracy of the simulated curves using the extracted parameters is verified with measured.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128972649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004059
H. Wong, P. Han, M. Poon
We conducted a series of experiments on porous silicon (PS) and porous polysilicon (PPS) to investigate the origins of photoluminescence in these materials. A study of the effects of surface layer plasma etching, for several different durations, on the as-anodized samples was conducted. For the photoluminescence (PL) study, results show that the intensity decreases rapidly, but the peak locations remain fairly unchanged, as the surface etching proceeds. In addition, only one band centered at around 680 nm (1.82 eV) is found in the PS samples whereas two bands, centered at 400 nm (3.1 eV) and 680 nm, are found in the PPS samples. The 400 nm peak disappears when the surface oxide layer was completely removed. These results could not be explained with the quantum confinement model of silicon nano structures. We ascribe these PL effects to the radiative centers in the surface oxide layer. Fourier transform infrared (FTIR) measurements on these samples further reveal that the PL peak at 680 nm correlates well with the NBOHCs (non-bridged oxide hole centers or /spl equiv/-SiO/spl middot/) and the 3.1 eV peak can also be attributed to the oxygen vacancy (/spl equiv/Si-Si/spl equiv/) in the surface silicon oxide layer.
{"title":"Photoluminescence of porous silicon and porous polysilicon films","authors":"H. Wong, P. Han, M. Poon","doi":"10.1109/ICCDCS.2002.1004059","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004059","url":null,"abstract":"We conducted a series of experiments on porous silicon (PS) and porous polysilicon (PPS) to investigate the origins of photoluminescence in these materials. A study of the effects of surface layer plasma etching, for several different durations, on the as-anodized samples was conducted. For the photoluminescence (PL) study, results show that the intensity decreases rapidly, but the peak locations remain fairly unchanged, as the surface etching proceeds. In addition, only one band centered at around 680 nm (1.82 eV) is found in the PS samples whereas two bands, centered at 400 nm (3.1 eV) and 680 nm, are found in the PPS samples. The 400 nm peak disappears when the surface oxide layer was completely removed. These results could not be explained with the quantum confinement model of silicon nano structures. We ascribe these PL effects to the radiative centers in the surface oxide layer. Fourier transform infrared (FTIR) measurements on these samples further reveal that the PL peak at 680 nm correlates well with the NBOHCs (non-bridged oxide hole centers or /spl equiv/-SiO/spl middot/) and the 3.1 eV peak can also be attributed to the oxygen vacancy (/spl equiv/Si-Si/spl equiv/) in the surface silicon oxide layer.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121222868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004097
S. Meo, A. Perfetto
The paper presents a comparison among different current control techniques for active power filter. The fixed-frequency hysteresis controller, the predictive controller and the neural controller are considered and different performance, achieved by the three controls, in a typical active power filter application are shown and discussed.
{"title":"Comparison of different control techniques for active filter applications","authors":"S. Meo, A. Perfetto","doi":"10.1109/ICCDCS.2002.1004097","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004097","url":null,"abstract":"The paper presents a comparison among different current control techniques for active power filter. The fixed-frequency hysteresis controller, the predictive controller and the neural controller are considered and different performance, achieved by the three controls, in a typical active power filter application are shown and discussed.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116322835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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