Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004114
J. Poruba
The spectral subtraction method is the most suitable technique for the elimination of stationary noise from degraded speech signal. In this article the basic principles of nonlinear spectral subtraction are described, which optimise the subtractive factor in dependence on input-degraded speech signal. In this way the undesirable musical noise remainder can be suppressed, which rises after a spectral subtraction. The obtained results are computed with the standard spectral subtraction method.
{"title":"Speech enhancement based on nonlinear spectral subtraction","authors":"J. Poruba","doi":"10.1109/ICCDCS.2002.1004114","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004114","url":null,"abstract":"The spectral subtraction method is the most suitable technique for the elimination of stationary noise from degraded speech signal. In this article the basic principles of nonlinear spectral subtraction are described, which optimise the subtractive factor in dependence on input-degraded speech signal. In this way the undesirable musical noise remainder can be suppressed, which rises after a spectral subtraction. The obtained results are computed with the standard spectral subtraction method.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129404156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004087
S. Ben Dhia, S. Baffreau, S. Calvet, E. Sicard
Following the scale down of integrated circuit technology and the continuous shift toward very high frequencies, the electromagnetic compatibility problems at IC level have recently risen in importance. To predict the electromagnetic behaviour of equipment it is necessary to model IC interface switching and its internal activities. Accurate IC modeling is necessary to realise electromagnetic behaviour simulation. This document describes a conducted mode parasitic emission model for complex IC internal activities. The authors compare conducted emission measurements on a micro-controller with simulations using the proposed model. This model describes more accurately the electromagnetic emissions of electronic equipment by taking into account the influence of internal activities. In order to validate the predicted core activity methodologies, the authors plan to conduct some internal measurements thanks to an on chip sampling technique.
{"title":"Characterisation of micro-controller electromagnetic emission: models for an international standard","authors":"S. Ben Dhia, S. Baffreau, S. Calvet, E. Sicard","doi":"10.1109/ICCDCS.2002.1004087","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004087","url":null,"abstract":"Following the scale down of integrated circuit technology and the continuous shift toward very high frequencies, the electromagnetic compatibility problems at IC level have recently risen in importance. To predict the electromagnetic behaviour of equipment it is necessary to model IC interface switching and its internal activities. Accurate IC modeling is necessary to realise electromagnetic behaviour simulation. This document describes a conducted mode parasitic emission model for complex IC internal activities. The authors compare conducted emission measurements on a micro-controller with simulations using the proposed model. This model describes more accurately the electromagnetic emissions of electronic equipment by taking into account the influence of internal activities. In order to validate the predicted core activity methodologies, the authors plan to conduct some internal measurements thanks to an on chip sampling technique.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129245361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004048
G. Dang, R. Mehandru, B. Luo, F. Ren, W. Hobson, J. Lopata, M. Tayahi, S. Chu, S. Pearton, W. Chang, H. Shen
Process technology of high-speed implant-apertured, index-guide, lateral-current-injection, dielectric-mirror GaAs quantum well vertical cavity surface emitting lasers has been developed. Oxygen and helium implantation for aperture definition and extrinsic capacitance reduction, dielectric mirror formation, p- and n-ohmic contact formation, were investigated. GaAs/AlGaAs based 850 nm VCSELs with small signal modulation bandwidths up to 11.5 Gb/s and an eye diagram generated at 12 Gb/s by a pseudorandom bit sequence (PRBS) of 231-1 were achieved. The with bit-error rates were below 10-13. The threshold current is as low as 0.8 mA for 7 mm diameter current apertures and typical slope efficiencies of 0.45-0.5 mA/mW are obtained for output mirror reflectivity of 99.5%.
{"title":"Fabrication and characteristics of high speed implant-confined, index-guided, lateral-current, 850 nm vertical cavity surface emitting lasers","authors":"G. Dang, R. Mehandru, B. Luo, F. Ren, W. Hobson, J. Lopata, M. Tayahi, S. Chu, S. Pearton, W. Chang, H. Shen","doi":"10.1109/ICCDCS.2002.1004048","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004048","url":null,"abstract":"Process technology of high-speed implant-apertured, index-guide, lateral-current-injection, dielectric-mirror GaAs quantum well vertical cavity surface emitting lasers has been developed. Oxygen and helium implantation for aperture definition and extrinsic capacitance reduction, dielectric mirror formation, p- and n-ohmic contact formation, were investigated. GaAs/AlGaAs based 850 nm VCSELs with small signal modulation bandwidths up to 11.5 Gb/s and an eye diagram generated at 12 Gb/s by a pseudorandom bit sequence (PRBS) of 231-1 were achieved. The with bit-error rates were below 10-13. The threshold current is as low as 0.8 mA for 7 mm diameter current apertures and typical slope efficiencies of 0.45-0.5 mA/mW are obtained for output mirror reflectivity of 99.5%.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129447984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004110
G. Gopalakrishnan, J. Leffew, S. Shreinivasan, W. Moreno
This paper will discuss a new approach to standardize call control in Voice over the Internet applications. Voice over the Internet applications are the latest commodities in the technology world and people with related expertise are working to make the system more efficient with respect to both the quality of service and the economic point of view. The major problem currently facing solution providers for Voice over the Internet applications is the lack of interoperability. That is the Voice over the Internet Protocol (VoIP) system of one provider is not compliant with that of another. The reason the providers need to be in compliance is that if more gateways are able to communicate with each other more connectivity is achieved. Greater connectivity, in turn, reduces the cost for the users. It is with interoperability in mind that people started the development of the Media Gateway Control Protocol (MGCP) where the ultimate goal is to make all products compatible. The Media Gateway Control Protocol is a messaging protocol that specifies the way in which a call agent and the gateways communicate with one another. The basic implementation of the MGCP protocol is composed of two modules the call agent, which is also known as the Gatekeeper and the gateway.
本文将讨论一种新的方法来标准化互联网语音应用中的呼叫控制。互联网上的语音应用是科技界的最新产品，具有相关专业知识的人员正在努力使该系统在服务质量和经济效益两方面都更有效率。目前互联网语音应用的解决方案提供商面临的主要问题是缺乏互操作性。也就是说，一个供应商的VoIP (Voice over the Internet Protocol)系统与另一个供应商的不兼容。提供者需要遵守的原因是，如果更多的网关能够相互通信，则可以实现更多的连接。更强的连接性反过来又降低了用户的成本。正是考虑到互操作性，人们开始开发媒体网关控制协议(MGCP)，其最终目标是使所有产品兼容。媒体网关控制协议是一种消息传递协议，它指定了呼叫代理和网关相互通信的方式。MGCP协议的基本实现由呼叫代理(也称为Gatekeeper)和网关两个模块组成。
{"title":"Standardizing call control in Voice over Internet applications: a MGCP approach","authors":"G. Gopalakrishnan, J. Leffew, S. Shreinivasan, W. Moreno","doi":"10.1109/ICCDCS.2002.1004110","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004110","url":null,"abstract":"This paper will discuss a new approach to standardize call control in Voice over the Internet applications. Voice over the Internet applications are the latest commodities in the technology world and people with related expertise are working to make the system more efficient with respect to both the quality of service and the economic point of view. The major problem currently facing solution providers for Voice over the Internet applications is the lack of interoperability. That is the Voice over the Internet Protocol (VoIP) system of one provider is not compliant with that of another. The reason the providers need to be in compliance is that if more gateways are able to communicate with each other more connectivity is achieved. Greater connectivity, in turn, reduces the cost for the users. It is with interoperability in mind that people started the development of the Media Gateway Control Protocol (MGCP) where the ultimate goal is to make all products compatible. The Media Gateway Control Protocol is a messaging protocol that specifies the way in which a call agent and the gateways communicate with one another. The basic implementation of the MGCP protocol is composed of two modules the call agent, which is also known as the Gatekeeper and the gateway.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129844879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004058
R. Salazar, A. Jacome
In this work a new Schottky barrier infrared detector (SBIRD) is presented. The barrier is formed by means of a layer of a-Si/sub 1-x/Ge/sub x/:H,F deposited by means of (plasma enhanced chemical vapor deposition) PECVD on p-type silicon. The barrier height of the system was estimated from I-V, I-V-T and internal photoemission measurements, and showed a value of 0.2 eV at 77 K. When the SBIRD was operated at 77 K, it showed a cut-off wavelength of /spl sim/6 /spl mu/m. The responsivity and quantum efficiency as a function of the wavelength are compared with SBIRDs which use Pd/sub 2/Si and PtSi on p-type silicon to form the Schottky barrier.
{"title":"Amorphous Si/sub 1-x/Ge/sub x//p-type-Si Schottky barrier infrared photon detector","authors":"R. Salazar, A. Jacome","doi":"10.1109/ICCDCS.2002.1004058","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004058","url":null,"abstract":"In this work a new Schottky barrier infrared detector (SBIRD) is presented. The barrier is formed by means of a layer of a-Si/sub 1-x/Ge/sub x/:H,F deposited by means of (plasma enhanced chemical vapor deposition) PECVD on p-type silicon. The barrier height of the system was estimated from I-V, I-V-T and internal photoemission measurements, and showed a value of 0.2 eV at 77 K. When the SBIRD was operated at 77 K, it showed a cut-off wavelength of /spl sim/6 /spl mu/m. The responsivity and quantum efficiency as a function of the wavelength are compared with SBIRDs which use Pd/sub 2/Si and PtSi on p-type silicon to form the Schottky barrier.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130344399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004107
R. Moller
The degree of machine automation is continuously increasing, because computer technology, control software, telecommunication technology and visualization systems are also continuously improved. This makes the use of new multimedia techniques for reading, communication and presentation of machine or process data possible, even over far distances. Multimedia communication is becoming a technology of growing importance for user interfaces in automation and process control. Think of acoustic and visual data obtained from microphones or cameras applied to a certain automated system. They can be simply used and understood as a new brand of sensors or actuators that are part of a process control unit. Supervising and monitoring of certain process states is simplified, if the operator can "see" and "hear" the real process. Technical aspects concerning types, quality and speed of multimedia data communication will be discussed and especially viewed for an implementation in automated systems.
{"title":"On the application of multimedia in control and automation","authors":"R. Moller","doi":"10.1109/ICCDCS.2002.1004107","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004107","url":null,"abstract":"The degree of machine automation is continuously increasing, because computer technology, control software, telecommunication technology and visualization systems are also continuously improved. This makes the use of new multimedia techniques for reading, communication and presentation of machine or process data possible, even over far distances. Multimedia communication is becoming a technology of growing importance for user interfaces in automation and process control. Think of acoustic and visual data obtained from microphones or cameras applied to a certain automated system. They can be simply used and understood as a new brand of sensors or actuators that are part of a process control unit. Supervising and monitoring of certain process states is simplified, if the operator can \"see\" and \"hear\" the real process. Technical aspects concerning types, quality and speed of multimedia data communication will be discussed and especially viewed for an implementation in automated systems.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"265 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133298275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004073
N. Stojadinovic, I. Manic, S. Djoric-Veljkovic, V. Davidovic, S. Golubovic, S. Dimitrijev
The effects of positive gate bias stressing and subsequent recovery treatment on threshold voltage and channel carrier mobility of power VDMOSFETs and the underlying changes in gate oxide-trapped charge and interface trap densities are presented and analysed in terms of the mechanisms responsible. Positive gate bias stress caused significant positive threshold voltage shift and mobility reduction in power VDMOSFETs, while their subsequent recovery treatment resulted into almost completely recovered threshold voltage and only partially recovered mobility. As for the mobility, it was still more than 40% below the initial value and could not be completely recovered by any additional treatment. Tunneling mechanisms associated with gate oxide traps are proposed as the dominant mechanisms responsible for buildup of positive oxide-trapped charge (electron tunneling from neutral oxide traps into the oxide conduction band) and interface traps (subsequent hole tunneling from the charged oxide traps to interface-trap precursors) during the stressing. Mechanisms related to a presence of hydrogen species are proposed as the main mechanisms responsible for decrease in densities of oxide-trapped charge (interface trap passivation due to their reaction with hydrogen atoms) and interface traps (hydrogen molecule cracking at charged oxide traps) during the recovery treatment. The effects of pre-irradiation positive gate bias stress on radiation response of power VDMOSFETs are also presented. Larger irradiation induced threshold voltage shift and mobility reduction in stressed devices are observed, clearly demonstrating inapplicability of gate bias stressing for radiation hardening of power VDMOSFETs.
{"title":"Effects of positive gate bias stressing and subsequent recovery treatment in power VDMOSFETs","authors":"N. Stojadinovic, I. Manic, S. Djoric-Veljkovic, V. Davidovic, S. Golubovic, S. Dimitrijev","doi":"10.1109/ICCDCS.2002.1004073","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004073","url":null,"abstract":"The effects of positive gate bias stressing and subsequent recovery treatment on threshold voltage and channel carrier mobility of power VDMOSFETs and the underlying changes in gate oxide-trapped charge and interface trap densities are presented and analysed in terms of the mechanisms responsible. Positive gate bias stress caused significant positive threshold voltage shift and mobility reduction in power VDMOSFETs, while their subsequent recovery treatment resulted into almost completely recovered threshold voltage and only partially recovered mobility. As for the mobility, it was still more than 40% below the initial value and could not be completely recovered by any additional treatment. Tunneling mechanisms associated with gate oxide traps are proposed as the dominant mechanisms responsible for buildup of positive oxide-trapped charge (electron tunneling from neutral oxide traps into the oxide conduction band) and interface traps (subsequent hole tunneling from the charged oxide traps to interface-trap precursors) during the stressing. Mechanisms related to a presence of hydrogen species are proposed as the main mechanisms responsible for decrease in densities of oxide-trapped charge (interface trap passivation due to their reaction with hydrogen atoms) and interface traps (hydrogen molecule cracking at charged oxide traps) during the recovery treatment. The effects of pre-irradiation positive gate bias stress on radiation response of power VDMOSFETs are also presented. Larger irradiation induced threshold voltage shift and mobility reduction in stressed devices are observed, clearly demonstrating inapplicability of gate bias stressing for radiation hardening of power VDMOSFETs.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"48 20","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114002112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004034
E.S. Hrayshat
In this paper two structures of three cascade solar cells are discussed and analyzed. The first one is a three cascade solar cell with upper wide gap "window", which exhibited an appreciable values of its main parameters (I/sub sc/, V/sub oc/). However, this structure has a limited short wavelength sensitivity because of the surface recombination. In order to improve the main parameters of the above mentioned structure - particularly the short wavelength sensitivity - a new structure of three cascade solar cells, with graded band gap upper layer is suggested. This structure has been elaborated by combining liquid phase epitaxy with gas-phase zinc diffusion technologies, and the graded band gap upper layer has been fabricated by utilization of a special cassette of penal-box type. This new structure has shown better parameters than the parameters of the three cascade solar cell with upper wide gap "window". It exhibits appreciable values of photo-current and output voltage. Furthermore, this structure provides high short wavelength sensitivity due to the utilization of the graded band gap layer.
{"title":"Role of the graded band gap layer in increasing the short wavelength sensitivity of three cascade solar cells","authors":"E.S. Hrayshat","doi":"10.1109/ICCDCS.2002.1004034","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004034","url":null,"abstract":"In this paper two structures of three cascade solar cells are discussed and analyzed. The first one is a three cascade solar cell with upper wide gap \"window\", which exhibited an appreciable values of its main parameters (I/sub sc/, V/sub oc/). However, this structure has a limited short wavelength sensitivity because of the surface recombination. In order to improve the main parameters of the above mentioned structure - particularly the short wavelength sensitivity - a new structure of three cascade solar cells, with graded band gap upper layer is suggested. This structure has been elaborated by combining liquid phase epitaxy with gas-phase zinc diffusion technologies, and the graded band gap upper layer has been fabricated by utilization of a special cassette of penal-box type. This new structure has shown better parameters than the parameters of the three cascade solar cell with upper wide gap \"window\". It exhibits appreciable values of photo-current and output voltage. Furthermore, this structure provides high short wavelength sensitivity due to the utilization of the graded band gap layer.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125117720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004093
J. Restrepo, M. Giménez, V. Guzmán, J. Aller, A. Bueno, A. Millan
This work presents the third version of the "Plataforma" integrated test system, a test rig for experiments required to validate dynamically different types of new strategies and control schemes based on vector control theories, parametric estimation, and neural networks applied to AC machine drives; and to analyze the effect of these control strategies over the mains quality. The equipment includes the AC driver power stages, the mechanical load emulation stage, the instrumentation stage and the signal processing and control stage. Two main improvements have been performed: (1) an improved instrumentation stage; (2) a dynamic load system implemented with a torque controlled DC motor. Due to its high versatility, this test system can be used both in research laboratories and postgraduate courses.
{"title":"Platform III: A new version for the integrated test system for AC machine drives performance analysis","authors":"J. Restrepo, M. Giménez, V. Guzmán, J. Aller, A. Bueno, A. Millan","doi":"10.1109/ICCDCS.2002.1004093","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004093","url":null,"abstract":"This work presents the third version of the \"Plataforma\" integrated test system, a test rig for experiments required to validate dynamically different types of new strategies and control schemes based on vector control theories, parametric estimation, and neural networks applied to AC machine drives; and to analyze the effect of these control strategies over the mains quality. The equipment includes the AC driver power stages, the mechanical load emulation stage, the instrumentation stage and the signal processing and control stage. Two main improvements have been performed: (1) an improved instrumentation stage; (2) a dynamic load system implemented with a torque controlled DC motor. Due to its high versatility, this test system can be used both in research laboratories and postgraduate courses.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125234611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004022
G. Jovanovic-Dolecek, J. Díaz-Carmona
This paper presents one method for the design of FIR fractional delay filters (FDF) with a rational fractional delay. The method is based on the use of the general multirate structure for a FDF and the interpolated finite impulse response (IFIR) structure. The result is a single, time invariant FIR filter with small passband ripples and a wide bandwidth. We discuss this design, and, through examples, compare it with other design methods.
{"title":"One method for FIR fractional delay filter design","authors":"G. Jovanovic-Dolecek, J. Díaz-Carmona","doi":"10.1109/ICCDCS.2002.1004022","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004022","url":null,"abstract":"This paper presents one method for the design of FIR fractional delay filters (FDF) with a rational fractional delay. The method is based on the use of the general multirate structure for a FDF and the interpolated finite impulse response (IFIR) structure. The result is a single, time invariant FIR filter with small passband ripples and a wide bandwidth. We discuss this design, and, through examples, compare it with other design methods.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122394476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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