Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004039
T. Grasser, A. Gehring, S. Selberherr
With the rapid feature size reduction of modern semiconductor devices accurate description of hot-carrier phenomena is becoming very important. Frequently used carrier transport models are the traditional drift-diffusion model and energy-transport models which also consider the average carrier energy as an independent solution variable. Recent results show, however, that the average energy is in many cases not sufficient for accurate modeling. Both the transport models themselves and the models for the physical parameters seem to be affected. After a review of the conventional models we present highly accurate impact ionization and gate current models based on a six moments transport model.
{"title":"Recent advances in transport modeling for miniaturized CMOS devices","authors":"T. Grasser, A. Gehring, S. Selberherr","doi":"10.1109/ICCDCS.2002.1004039","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004039","url":null,"abstract":"With the rapid feature size reduction of modern semiconductor devices accurate description of hot-carrier phenomena is becoming very important. Frequently used carrier transport models are the traditional drift-diffusion model and energy-transport models which also consider the average carrier energy as an independent solution variable. Recent results show, however, that the average energy is in many cases not sufficient for accurate modeling. Both the transport models themselves and the models for the physical parameters seem to be affected. After a review of the conventional models we present highly accurate impact ionization and gate current models based on a six moments transport model.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125180441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004094
S. Ma, H. Wong, Y. Yam
A novel push-pull amplifier based on class E configuration is proposed. The output power of this new structure is four times of that of the conventional single end class E amplifier with same supply voltage. Detailed analysis and design procedures, with a design example, are also given in this paper.
{"title":"Optimal design of high output power class E amplifier","authors":"S. Ma, H. Wong, Y. Yam","doi":"10.1109/ICCDCS.2002.1004094","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004094","url":null,"abstract":"A novel push-pull amplifier based on class E configuration is proposed. The output power of this new structure is four times of that of the conventional single end class E amplifier with same supply voltage. Detailed analysis and design procedures, with a design example, are also given in this paper.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124796774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004068
Yuhua Cheng
The influence of local process variation and device mismatch to the electrical characteristics of resistors, capacitors, and MOSFETs is reviewed. The discussion is mainly focus on the device mismatch as it becomes more and more important in analog design utilizing modern CMOS technology. The models to describe the mismatch behavior are also discussed. To reduce the design circle/cost and help improving the circuit yields, physical and accurate statistical modeling approach is needed to predict correctly the circuit behavior with the consideration of local process variation and device mismatch. With including the physical correlations between the independent variable and model parameters such models can predict the measured data well at different bias conditions for devices with wide geometries. For the model to be predictive, besides the well known physical effects such as short and narrow width effects, the influence of new physics effects such as poly-gate depletion and channel quantization to process variation and mismatch should be accounted for to describe the device/circuit behaviors correctly.
{"title":"The influence and modeling of process variation and device mismatch for analog/rf circuit design","authors":"Yuhua Cheng","doi":"10.1109/ICCDCS.2002.1004068","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004068","url":null,"abstract":"The influence of local process variation and device mismatch to the electrical characteristics of resistors, capacitors, and MOSFETs is reviewed. The discussion is mainly focus on the device mismatch as it becomes more and more important in analog design utilizing modern CMOS technology. The models to describe the mismatch behavior are also discussed. To reduce the design circle/cost and help improving the circuit yields, physical and accurate statistical modeling approach is needed to predict correctly the circuit behavior with the consideration of local process variation and device mismatch. With including the physical correlations between the independent variable and model parameters such models can predict the measured data well at different bias conditions for devices with wide geometries. For the model to be predictive, besides the well known physical effects such as short and narrow width effects, the influence of new physics effects such as poly-gate depletion and channel quantization to process variation and mismatch should be accounted for to describe the device/circuit behaviors correctly.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125437183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004074
M. Shur, R. Gaska, A. Khan, G. Simin
The feature sizes of silicon devices approach values where fundamental physics limitations lead to diminishing returns on investment in further scaling, and wide band gap semiconductor materials look increasingly attractive for many applications, where high electron mobility, high current carrying capabilities, a high thermal conductivity, high temperature operation, and a high breakdown field make them superior to silicon and III-V semiconductor technology. GaN-based devices have demonstrated high-temperature operation with little or no degradation up to 300/spl deg/C. The most spectacular results have been obtained for AlGaN/GaN microwave power High Electron Mobility Transistors (HEMTs) that yielded over to 11 W/mm power at 10 GHz. The maximum density of the two-dimensional electron gas at the GaN/AlGaN heterointerface or in GaN/AlGaN quantum well structures can exceed 2/spl times/10/sup 13/ cm/sup -2/, which is an order of magnitude higher than for traditional GaAs/AlGaAs heterostructures. Very large piezoelectric constants of AlN and GaN can be used in piezoelectric and pyroelectric sensors and could be taken advantage for enhancing the sheet carrier concentration and reducing leakage current in conventional electronic devices. Recently proposed Strain Energy Band Engineering and Pulsed Atomic Epitaxy techniques should allow us to independently control strain and lattice mismatch by using AlInGaN/GaN heterostructures and should find important applications in power devices. SiO/sub 2//AlGaInN/GaN Metal Oxide Semiconductor Heterostructure Field Effect Transistors (MOSHFETs) and SiN/AlGaInN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistors (MISHFETs) have exhibited performance superior to that of conventional AlGaN/GaN devices and hold promise for power applications. GaN epitaxial layers can be grown on SiC, which allows us to combine superior transport properties of GaN with a high thermal conductivity of SiC. All this gives hope that electronic devices based on GaN will reach the same prominence as GaN-based blue and white, and UV light emitters.
{"title":"Wide band gap electronic devices","authors":"M. Shur, R. Gaska, A. Khan, G. Simin","doi":"10.1109/ICCDCS.2002.1004074","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004074","url":null,"abstract":"The feature sizes of silicon devices approach values where fundamental physics limitations lead to diminishing returns on investment in further scaling, and wide band gap semiconductor materials look increasingly attractive for many applications, where high electron mobility, high current carrying capabilities, a high thermal conductivity, high temperature operation, and a high breakdown field make them superior to silicon and III-V semiconductor technology. GaN-based devices have demonstrated high-temperature operation with little or no degradation up to 300/spl deg/C. The most spectacular results have been obtained for AlGaN/GaN microwave power High Electron Mobility Transistors (HEMTs) that yielded over to 11 W/mm power at 10 GHz. The maximum density of the two-dimensional electron gas at the GaN/AlGaN heterointerface or in GaN/AlGaN quantum well structures can exceed 2/spl times/10/sup 13/ cm/sup -2/, which is an order of magnitude higher than for traditional GaAs/AlGaAs heterostructures. Very large piezoelectric constants of AlN and GaN can be used in piezoelectric and pyroelectric sensors and could be taken advantage for enhancing the sheet carrier concentration and reducing leakage current in conventional electronic devices. Recently proposed Strain Energy Band Engineering and Pulsed Atomic Epitaxy techniques should allow us to independently control strain and lattice mismatch by using AlInGaN/GaN heterostructures and should find important applications in power devices. SiO/sub 2//AlGaInN/GaN Metal Oxide Semiconductor Heterostructure Field Effect Transistors (MOSHFETs) and SiN/AlGaInN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistors (MISHFETs) have exhibited performance superior to that of conventional AlGaN/GaN devices and hold promise for power applications. GaN epitaxial layers can be grown on SiC, which allows us to combine superior transport properties of GaN with a high thermal conductivity of SiC. All this gives hope that electronic devices based on GaN will reach the same prominence as GaN-based blue and white, and UV light emitters.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127800946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004117
T. Dostál, D. Biolek, K. Vrba
The paper deals with the transformation of networks in the familiar voltage signal processing mode (VM) into the equivalent current mode (CM). The adjoint VM-CM transformation of the circuits, containing several modern multi-port current conveyors, is given. An example of adjoint VM and CM biquadratic ARC filters, using differential voltage current conveyors (DVCC), illustrates this transformation.
{"title":"Adjoint voltage-current mode transformation for circuits based on modern current conveyors","authors":"T. Dostál, D. Biolek, K. Vrba","doi":"10.1109/ICCDCS.2002.1004117","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004117","url":null,"abstract":"The paper deals with the transformation of networks in the familiar voltage signal processing mode (VM) into the equivalent current mode (CM). The adjoint VM-CM transformation of the circuits, containing several modern multi-port current conveyors, is given. An example of adjoint VM and CM biquadratic ARC filters, using differential voltage current conveyors (DVCC), illustrates this transformation.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121620961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004002
H. Vázquez-Leal, L. Hernández-Martínez, A. Sarmiento-Reyes, R. Murphy‐Arteaga
This paper establishes a criterion for determining the effect of the nonlinear coupled variables when setting up the equations for homotopic simulation. By resorting to a classification of the nonlinear branch relationships and the transactors in order to determine which is the node driving the most nonlinear equation, a very simple scheme is obtained.
{"title":"Consequence of the coupled variables in homotopic simulation of nonlinear resistive circuits","authors":"H. Vázquez-Leal, L. Hernández-Martínez, A. Sarmiento-Reyes, R. Murphy‐Arteaga","doi":"10.1109/ICCDCS.2002.1004002","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004002","url":null,"abstract":"This paper establishes a criterion for determining the effect of the nonlinear coupled variables when setting up the equations for homotopic simulation. By resorting to a classification of the nonlinear branch relationships and the transactors in order to determine which is the node driving the most nonlinear equation, a very simple scheme is obtained.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121584465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004003
F. Masuoka, T. Endoh, H. Sakuraba
Three dimensional (3D) memory array architecture is realized by stacking several cells in series vertically up on each cell which is located in a two dimensional (2D) array matrix. Total bit-line capacitance of this proposed architecture's DRAM is suppressed to 37% of that of a normal DRAM, when one bit-line has 1K-bit cells and the same design rules are used. Moreover, array area of a 1 Mbit DRAM using the proposed architecture, is reduced to 11.5% of that of a normal DRAM using the same design rules.
{"title":"New three dimensional (3D) memory array architecture for future ultra high density DRAM (invited)","authors":"F. Masuoka, T. Endoh, H. Sakuraba","doi":"10.1109/ICCDCS.2002.1004003","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004003","url":null,"abstract":"Three dimensional (3D) memory array architecture is realized by stacking several cells in series vertically up on each cell which is located in a two dimensional (2D) array matrix. Total bit-line capacitance of this proposed architecture's DRAM is suppressed to 37% of that of a normal DRAM, when one bit-line has 1K-bit cells and the same design rules are used. Moreover, array area of a 1 Mbit DRAM using the proposed architecture, is reduced to 11.5% of that of a normal DRAM using the same design rules.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117237136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004008
R. Salinas-Cruz, G. Espinosa-Flores-V
An improved version of a fully differential folded-cascode OTA (operational transconductance amplifier), switched at 16 MHz with a single 3 V supply voltage, is presented. The switching process is performed by current deviation at the OTA output stage, instead of turning off its bias current or interrupting the current path from the power supply. Theoretical results show the relationship between the sampling frequency and the folded-cascode OTA design parameters. Simulated results using HSPICE show that the current through the transistors at the OTA output stage is switched properly.
{"title":"A folded-cascode switched OTA based on current deviation","authors":"R. Salinas-Cruz, G. Espinosa-Flores-V","doi":"10.1109/ICCDCS.2002.1004008","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004008","url":null,"abstract":"An improved version of a fully differential folded-cascode OTA (operational transconductance amplifier), switched at 16 MHz with a single 3 V supply voltage, is presented. The switching process is performed by current deviation at the OTA output stage, instead of turning off its bias current or interrupting the current path from the power supply. Theoretical results show the relationship between the sampling frequency and the folded-cascode OTA design parameters. Simulated results using HSPICE show that the current through the transistors at the OTA output stage is switched properly.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"142 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116151623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004105
M. Liénard, P. Degauque
This paper describes a wideband analysis of the field distribution in a road tunnel, both the mobile and fixed antennas being situated inside the tunnel. The transmitting frequency is 2.1 GHz and predicted values obtained from a propagation model are compared to experimental results for various traffic conditions.
{"title":"Propagation in road tunnels: from modeling to experiments","authors":"M. Liénard, P. Degauque","doi":"10.1109/ICCDCS.2002.1004105","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004105","url":null,"abstract":"This paper describes a wideband analysis of the field distribution in a road tunnel, both the mobile and fixed antennas being situated inside the tunnel. The transmitting frequency is 2.1 GHz and predicted values obtained from a propagation model are compared to experimental results for various traffic conditions.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"238 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121706540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004112
A. Basu, S. Shreinivasan, W. Moreno
A scalable video coder produces a bit stream, decodable at different bit rates. It can substantially improve the quality of video transmitted over error prone channels such as Internet or wireless. The scalable video coding utilizes motion prediction to achieve higher compression efficiency. Since motion compensation is used to reduce temporal redundancy, the quality of the decoded video may decay due to the propagation of errors in the temporal domain. Hence, the double-vector motion compensation (DMC) is used in the scalable video coder, which is implemented in this work. Search strategies based on gradient-descent methods are used. In this study, error concealment techniques are used, which estimate the lost motion vectors by exploiting correlation within the video sequences.
{"title":"Enhanced coder with error resilience","authors":"A. Basu, S. Shreinivasan, W. Moreno","doi":"10.1109/ICCDCS.2002.1004112","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004112","url":null,"abstract":"A scalable video coder produces a bit stream, decodable at different bit rates. It can substantially improve the quality of video transmitted over error prone channels such as Internet or wireless. The scalable video coding utilizes motion prediction to achieve higher compression efficiency. Since motion compensation is used to reduce temporal redundancy, the quality of the decoded video may decay due to the propagation of errors in the temporal domain. Hence, the double-vector motion compensation (DMC) is used in the scalable video coder, which is implemented in this work. Search strategies based on gradient-descent methods are used. In this study, error concealment techniques are used, which estimate the lost motion vectors by exploiting correlation within the video sequences.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122014890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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