Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543681
Nirmal Peilis, G. Mizuta, H. Kanda, Tomoya Nishina, S. Ito, H. Segawa
Developing low-cost hole transporting materials or hole-conductor free mesoscopic Perovskite solar cells (PSCs) by replacing the noble metal-based counter electrodes with inexpensive and abundantly available materials is a great interest in Photovoltaic industry. Herein, we fabricated fully printable low-cost mesoscopic PSCs with carbon counter electrode using mesoporous TiO2 and NiO layers as electron and hole selective contacts respectively. The influence of NiO layer on the charge transfer processes in printable PSC was studied by the electrochemical impedance spectroscopy. Our study confirmed that the NiO layer promises to greatly enhance the device performance and stability by extracting photo-generated holes efficiently than in a device without the NiO layer.
{"title":"Fully printable mesoscopic perovskite solar cells; effect of NiO layer on the device performance","authors":"Nirmal Peilis, G. Mizuta, H. Kanda, Tomoya Nishina, S. Ito, H. Segawa","doi":"10.1109/AM-FPD.2016.7543681","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543681","url":null,"abstract":"Developing low-cost hole transporting materials or hole-conductor free mesoscopic Perovskite solar cells (PSCs) by replacing the noble metal-based counter electrodes with inexpensive and abundantly available materials is a great interest in Photovoltaic industry. Herein, we fabricated fully printable low-cost mesoscopic PSCs with carbon counter electrode using mesoporous TiO2 and NiO layers as electron and hole selective contacts respectively. The influence of NiO layer on the charge transfer processes in printable PSC was studied by the electrochemical impedance spectroscopy. Our study confirmed that the NiO layer promises to greatly enhance the device performance and stability by extracting photo-generated holes efficiently than in a device without the NiO layer.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124897756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543680
Chien-Liang Lin, Tien‐Lung Chiu, Chia-Hsun Chen, Chi-Fang Lin, Jiu-Haw Lee
We demonstrated the layer thickness effects of molybdenum-trioxide (MoO3) as buffer layer inserting at the interface between silver anode and organic material of a top-incident organic photovoltaic (OPV). The OPV structure contained active bilayer layers using 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) and fullerene (C70). In this study, we obtained an OPV with 5-nm MoO3 showing the greater power conversion efficiency of 2.78%. In addition, this optimized OPV result was caused from the greater short circuit current (Jsc of 11.35 mA/cm2) and fill factor (FF of 47.12).
{"title":"Effects of molybdenum trioxide thickness of organic photovoltaic with silver anode","authors":"Chien-Liang Lin, Tien‐Lung Chiu, Chia-Hsun Chen, Chi-Fang Lin, Jiu-Haw Lee","doi":"10.1109/AM-FPD.2016.7543680","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543680","url":null,"abstract":"We demonstrated the layer thickness effects of molybdenum-trioxide (MoO3) as buffer layer inserting at the interface between silver anode and organic material of a top-incident organic photovoltaic (OPV). The OPV structure contained active bilayer layers using 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) and fullerene (C70). In this study, we obtained an OPV with 5-nm MoO3 showing the greater power conversion efficiency of 2.78%. In addition, this optimized OPV result was caused from the greater short circuit current (Jsc of 11.35 mA/cm2) and fill factor (FF of 47.12).","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121436224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543655
Da-Jeong Yun, Han-Byeol Kang, Sung‐Min Yoon
Charge-trap memory thin film transistors employing In-Ga-Zn-O thin films as active channel and charge-trap layers (CTLs) were fabricated and characterized. To optimize process conditions, the design parameters were categorized into two parts. First, the thickness effects of double-layered tunneling oxide were examined and the 5 nm/5 nm configuration was chosen for guaranteeing process window and device performance. Secondly, the CTL thickness effects were investigated and the device using 30 nm-thick CTL showed most desirable behaviors including superior memory operation and device uniformity. The CTL geometry was also found to have significant impact on nonvolatile memory operations.
{"title":"Investigations on device design parameters of all-oxide transparent charge-trap memory thin-film transistors","authors":"Da-Jeong Yun, Han-Byeol Kang, Sung‐Min Yoon","doi":"10.1109/AM-FPD.2016.7543655","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543655","url":null,"abstract":"Charge-trap memory thin film transistors employing In-Ga-Zn-O thin films as active channel and charge-trap layers (CTLs) were fabricated and characterized. To optimize process conditions, the design parameters were categorized into two parts. First, the thickness effects of double-layered tunneling oxide were examined and the 5 nm/5 nm configuration was chosen for guaranteeing process window and device performance. Secondly, the CTL thickness effects were investigated and the device using 30 nm-thick CTL showed most desirable behaviors including superior memory operation and device uniformity. The CTL geometry was also found to have significant impact on nonvolatile memory operations.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131603531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543603
Yeo-Myeong Kim, Eom-Ji Kim, W. Lee, Jiyoung Oh, Sung‐Min Yoon
We proposed a synapse thin film transistors with a bottom-gate structure composed of an In-Ga-Zn-O (IGZO) active channel and a poly 4(vinylphenol)-sodium beta-alumina (PVP-SBA) gate insulator. The physical and electrical properties of the PVP-SBA were demonstrated as an electrolytic gate insulator for the synapse TFTs. Paired-pulse facilitation (PPF), short-term memory (STM), and long-term memory (LTM) operations were successfully confirmed in the fabricated synapse TFTs, in which output drain currents were effectively modulated with various input pulse conditions owing to the electrostatic coupling between the carriers in IGZO channel and sodium ions in PVP-SBA in the STM operation and electrochemical doping in the LTM operation, respectively.
{"title":"Brain-like synaptic operations of thin-film transistors using In-Ga-Zn-O active channel and PVP-SBA electrolytic gate insulator","authors":"Yeo-Myeong Kim, Eom-Ji Kim, W. Lee, Jiyoung Oh, Sung‐Min Yoon","doi":"10.1109/AM-FPD.2016.7543603","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543603","url":null,"abstract":"We proposed a synapse thin film transistors with a bottom-gate structure composed of an In-Ga-Zn-O (IGZO) active channel and a poly 4(vinylphenol)-sodium beta-alumina (PVP-SBA) gate insulator. The physical and electrical properties of the PVP-SBA were demonstrated as an electrolytic gate insulator for the synapse TFTs. Paired-pulse facilitation (PPF), short-term memory (STM), and long-term memory (LTM) operations were successfully confirmed in the fabricated synapse TFTs, in which output drain currents were effectively modulated with various input pulse conditions owing to the electrostatic coupling between the carriers in IGZO channel and sodium ions in PVP-SBA in the STM operation and electrochemical doping in the LTM operation, respectively.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114746779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543635
Hoang-Tuan Vu, Y. Su, Chun-Yuan Huang, H. Yu, R. Chiang, Chih-Jung Chen
In this study, we investigated the stable and efficient quantum-dot light emitting diodes (QLEDs) under high driving current by using composition-gradient thick-shell CdSe@ZnS/ZnS QDs. Thick-shell QDs with low defective structure can effectively avoid the electron-hole pairs from nonradiative Auger recombination and prevent thermal-stress-induced expansion at high driving current. Consequently, roll-off effect in electroluminescent feature can be reduced almost two times. Moreover, the maximum current efficiency of thick-shell-device is 10.3 cd/A, which much higher than 1.57 cd/A in thin-shell-device.
{"title":"Reducing roll-off effect of efficient green quantum-dot light-emitting diodes via composition-gradient thick-shell quantum dots","authors":"Hoang-Tuan Vu, Y. Su, Chun-Yuan Huang, H. Yu, R. Chiang, Chih-Jung Chen","doi":"10.1109/AM-FPD.2016.7543635","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543635","url":null,"abstract":"In this study, we investigated the stable and efficient quantum-dot light emitting diodes (QLEDs) under high driving current by using composition-gradient thick-shell CdSe@ZnS/ZnS QDs. Thick-shell QDs with low defective structure can effectively avoid the electron-hole pairs from nonradiative Auger recombination and prevent thermal-stress-induced expansion at high driving current. Consequently, roll-off effect in electroluminescent feature can be reduced almost two times. Moreover, the maximum current efficiency of thick-shell-device is 10.3 cd/A, which much higher than 1.57 cd/A in thin-shell-device.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116973490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this letter, we report enhanced gate-bias and current stress stability of p-type SnO thin-film transistors passivated with SiNx/HfO2 layers. The improvement is primarily attributed to the effective suppression of bias-induced adsorption of oxygen molecules on the back-channel surface by the presence of passivation layers. Under the gate-bias stress of 10 V and -10 V for 10000 s, the threshold voltage shifts for the passivated TFT are 0.75 V and -0.42 V respectively, while the corresponding values for the unpassivated one are 1.24 V and -0.77 V Under the current stress of 2.5 μA for 10000 s, the threshold voltage shift is -0.29 V for the passivated TFT and -0.63 V for the unpassivated one.
{"title":"Enhancement of gate-bias and current stress stability of P-type SnO thin-film transistors with SiNx/HfO2 passivation layers","authors":"Shu-Ming Hsu, Yun-Shiuan Li, Min-Sheng Tu, Jyun-Ci He, I. Chiu, Pin-Guang Chen, Min-Hung Lee, Jian-Zhang Chen, Cheng","doi":"10.1109/AM-FPD.2016.7543648","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543648","url":null,"abstract":"In this letter, we report enhanced gate-bias and current stress stability of p-type SnO thin-film transistors passivated with SiNx/HfO2 layers. The improvement is primarily attributed to the effective suppression of bias-induced adsorption of oxygen molecules on the back-channel surface by the presence of passivation layers. Under the gate-bias stress of 10 V and -10 V for 10000 s, the threshold voltage shifts for the passivated TFT are 0.75 V and -0.42 V respectively, while the corresponding values for the unpassivated one are 1.24 V and -0.77 V Under the current stress of 2.5 μA for 10000 s, the threshold voltage shift is -0.29 V for the passivated TFT and -0.63 V for the unpassivated one.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123808230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543634
Chih‐Hao Chang, G. Krucaite, Dain Lo, Yun-Lan Chen, Chu-Chun Su, Tzu-Chun Lin, J. Gražulevičius, L. Peciulyte, S. Grigalevicius
A new series of 9-hexylcarbazole-based hole transporting materials (HTMs) with naphthyl or pyrenyl substitutions (i.e. compounds 1 and 2) were synthesized and characterized. Compound 2 possesses an adequate ionization potential and triplet energy gap of 5.54 eV and 2.48 eV respectively, which makes 2 a suitable HTM for use in red phosphorescent organic light-emitting diodes (OLEDs). In contrast, a rather higher ionization potential of 1 was estimated to be 5.72 eV, thus the p-type conducting dopant should be introduced in device fabrication. The respective peak efficiencies of compounds 1 and 2-based OLEDs with the p-type dopant were recorded at 15.4 % (26.0 cd/A and 24.2 lm/W) and 17.3 % (26.1 cd/A and 19.1 lm/W), demonstrating their high potential for EL applications.
{"title":"Efficient red phosphorescent OLEDs employing 2-phenylcarbazoles-based hole transport materials","authors":"Chih‐Hao Chang, G. Krucaite, Dain Lo, Yun-Lan Chen, Chu-Chun Su, Tzu-Chun Lin, J. Gražulevičius, L. Peciulyte, S. Grigalevicius","doi":"10.1109/AM-FPD.2016.7543634","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543634","url":null,"abstract":"A new series of 9-hexylcarbazole-based hole transporting materials (HTMs) with naphthyl or pyrenyl substitutions (i.e. compounds 1 and 2) were synthesized and characterized. Compound 2 possesses an adequate ionization potential and triplet energy gap of 5.54 eV and 2.48 eV respectively, which makes 2 a suitable HTM for use in red phosphorescent organic light-emitting diodes (OLEDs). In contrast, a rather higher ionization potential of 1 was estimated to be 5.72 eV, thus the p-type conducting dopant should be introduced in device fabrication. The respective peak efficiencies of compounds 1 and 2-based OLEDs with the p-type dopant were recorded at 15.4 % (26.0 cd/A and 24.2 lm/W) and 17.3 % (26.1 cd/A and 19.1 lm/W), demonstrating their high potential for EL applications.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130872602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543625
Mei-Ying Chang, Chun-Chiao Lin, Ming-Yuan Huang
In this study, we inserted a two-dimensional (2D) photonic quasi-crystal (PQC) structure into the OLED devices for light extraction. The 2-D PQC structure was fabricated on the glass substrate by simple way of nanoimprinting. To decrease the roughness of the substrate, we used the polymer layer to cover and planarize the PQC structure on the glass substrate, and then, we fabricated the internally planarized green OLEDs. The internally planarized green OLEDs show a great enhancements of the external quantum efficiency by 20.0% compared to the normal green OLEDs. The results can attribute to the light out-coupling effect in the OLED via the 2-D PQC structure to release the generated light trapped in the wave guide mode due to the total internal reflection (TIR).
{"title":"Extraction efficiency of organic light emitting diodes with two-dimensional photonic quasi-crystal structure","authors":"Mei-Ying Chang, Chun-Chiao Lin, Ming-Yuan Huang","doi":"10.1109/AM-FPD.2016.7543625","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543625","url":null,"abstract":"In this study, we inserted a two-dimensional (2D) photonic quasi-crystal (PQC) structure into the OLED devices for light extraction. The 2-D PQC structure was fabricated on the glass substrate by simple way of nanoimprinting. To decrease the roughness of the substrate, we used the polymer layer to cover and planarize the PQC structure on the glass substrate, and then, we fabricated the internally planarized green OLEDs. The internally planarized green OLEDs show a great enhancements of the external quantum efficiency by 20.0% compared to the normal green OLEDs. The results can attribute to the light out-coupling effect in the OLED via the 2-D PQC structure to release the generated light trapped in the wave guide mode due to the total internal reflection (TIR).","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126335976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543695
A. Chin, C. Shih, Chun-Fu Lu, W. Su
Very high mobility of 149~189 cm2/Vs, large on-to-off current ratio (ION/IOff) of >7 orders of magnitude, fast turn-on sub-threshold swing of 110 mV/decade, and low power operation at 2~2.5 V were achieved in SnO2 TFT device at an ultra-thin SnO2 thickness of 4.5 nm. The device mobility of SnO2 TFT is higher than the best ZnO-based TFTs and CVD-grown multi-layers MoS2 MOSFETs. The reached mobility is already 0.7 times of universal mobility of SiO2/Si nMOSFET, operated typically at >1 MV/cm field. The very high mobility, simple low temperature process, and ultra-thin body SnO2 transistor should find its crucial role for high resolution display, future sub-10 nm nMOSFET and brain-mimicking 3D IC.
{"title":"High mobility SnO2 TFT for display and future IC","authors":"A. Chin, C. Shih, Chun-Fu Lu, W. Su","doi":"10.1109/AM-FPD.2016.7543695","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543695","url":null,"abstract":"Very high mobility of 149~189 cm<sup>2</sup>/Vs, large on-to-off current ratio (I<sub>ON</sub>/I<sub>Off</sub>) of >7 orders of magnitude, fast turn-on sub-threshold swing of 110 mV/decade, and low power operation at 2~2.5 V were achieved in SnO<sub>2</sub> TFT device at an ultra-thin SnO<sub>2</sub> thickness of 4.5 nm. The device mobility of SnO<sub>2</sub> TFT is higher than the best ZnO-based TFTs and CVD-grown multi-layers MoS<sub>2</sub> MOSFETs. The reached mobility is already 0.7 times of universal mobility of SiO<sub>2</sub>/Si nMOSFET, operated typically at >1 MV/cm field. The very high mobility, simple low temperature process, and ultra-thin body SnO<sub>2</sub> transistor should find its crucial role for high resolution display, future sub-10 nm nMOSFET and brain-mimicking 3D IC.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"212 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133736265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543623
Jisoo Hong, Youngmin Kim, Sunghee Hong, Choonsung Shin, Hoonjong Kang
Hologram synthesis for holographic wavefront printer using mesh information of target three-dimensional object can be implemented by applying spherical carrier wave for each hogel. With hogel-wise preprocessing of mesh information, the printed hologram successfully demonstrates the optical reconstruction of three-dimensional image composed of triangular meshes.
{"title":"Mesh-based hologram synthesis for holographic wavefront printer","authors":"Jisoo Hong, Youngmin Kim, Sunghee Hong, Choonsung Shin, Hoonjong Kang","doi":"10.1109/AM-FPD.2016.7543623","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543623","url":null,"abstract":"Hologram synthesis for holographic wavefront printer using mesh information of target three-dimensional object can be implemented by applying spherical carrier wave for each hogel. With hogel-wise preprocessing of mesh information, the printed hologram successfully demonstrates the optical reconstruction of three-dimensional image composed of triangular meshes.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133991263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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