Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543665
Chien-Yie Tsay, Po‐Hsien Wu
We incorporated Mg into InZnO semiconductor thin films and deposited metal-semiconductor-metal (MSM) ultraviolet photodetectors on alkali-free glasses by sol-gel spin-coating method. In this study, the effect of incorporating Mg into InZnO thin films on the optical, electrical, and UV photoresponse properties were investigated and photoconductive UV detectors were realized using IZO-based thin films. The Mg content ([Mg]/[In +Zn]) was varied from 0 to 20% in the resultant solutions. Each as-coated sol-gel film was preheated at 300 °C for 10 min and then annealed at 450 °C for 2 h. All as-prepared IZO-based thin films were amorphous phase, displayed a flat surface and uniform thickness, and exhibited good visible transmittance (≥ 90.0%). We found that UV illumination increased the photocurrents in all oxide thin films, and that MIZO photodetectors exhibited better photocurrent generation than pure IZO photodetectors. The decrease in oxygen deficiencies and carrier concentration resulted in less electrical trapping in MIZO than in pure IZO photodetectors.
{"title":"Investigation of the effects of Mg incorporation into solution-processed InZnO semiconductor thin films for UV photodetectors","authors":"Chien-Yie Tsay, Po‐Hsien Wu","doi":"10.1109/AM-FPD.2016.7543665","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543665","url":null,"abstract":"We incorporated Mg into InZnO semiconductor thin films and deposited metal-semiconductor-metal (MSM) ultraviolet photodetectors on alkali-free glasses by sol-gel spin-coating method. In this study, the effect of incorporating Mg into InZnO thin films on the optical, electrical, and UV photoresponse properties were investigated and photoconductive UV detectors were realized using IZO-based thin films. The Mg content ([Mg]/[In +Zn]) was varied from 0 to 20% in the resultant solutions. Each as-coated sol-gel film was preheated at 300 °C for 10 min and then annealed at 450 °C for 2 h. All as-prepared IZO-based thin films were amorphous phase, displayed a flat surface and uniform thickness, and exhibited good visible transmittance (≥ 90.0%). We found that UV illumination increased the photocurrents in all oxide thin films, and that MIZO photodetectors exhibited better photocurrent generation than pure IZO photodetectors. The decrease in oxygen deficiencies and carrier concentration resulted in less electrical trapping in MIZO than in pure IZO photodetectors.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130549681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543664
S. Fuji, A. Heya, N. Matsuo
Hot Mesh Deposition (HMD) method was investigated as a formation method of graphene. The HMD method can control the structure of composition by using decomposed molecule of pentacene. It is expected that graphene or graphene nanoribbon is formed by this apparatus. It is cleared that the molecular structure of the deposited organic film was changes by changing distance of mesh and substrate (DMS). In addition, it is confirmed that an organic film having a structure close to pentacene dimer and trimer were deposited by HMD using two heated catalysts.
{"title":"Study on graphene formation by hot mesh deposition","authors":"S. Fuji, A. Heya, N. Matsuo","doi":"10.1109/AM-FPD.2016.7543664","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543664","url":null,"abstract":"Hot Mesh Deposition (HMD) method was investigated as a formation method of graphene. The HMD method can control the structure of composition by using decomposed molecule of pentacene. It is expected that graphene or graphene nanoribbon is formed by this apparatus. It is cleared that the molecular structure of the deposited organic film was changes by changing distance of mesh and substrate (DMS). In addition, it is confirmed that an organic film having a structure close to pentacene dimer and trimer were deposited by HMD using two heated catalysts.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127231598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Aqueous ammonia is used as the new additive to the H2O2-based etchant for back-channel-etch (BCE) amorphous Indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) to pattern Mo source/drain. The Mo residue after being etched by H2O2:NH3·H2O is removed completely by adjusting the PH value to above 7. The BCE a-IGZO TFTs fabricated with the new solution exhibit excellent performances with the field effect mobility of 12.26 cm2V-1s-1, threshold voltage of 0.17 V and sub-threshold swing of 0.24 V/dec when PH value is 9.8. The threshold voltage shift of the device is less than -0.5 V under gate-bias voltage stress of ±30V for 1hour.
{"title":"Impact of wet etchant with different PH value on the performance of back-channel-etch a-IGZO thin-film-transistor","authors":"Chongyang Ren, Hongjuan Lu, Xiang Xiao, Wei Deng, Yuxiang Xiao, Shengdong Zhang","doi":"10.1109/AM-FPD.2016.7543644","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543644","url":null,"abstract":"Aqueous ammonia is used as the new additive to the H<sub>2</sub>O<sub>2</sub>-based etchant for back-channel-etch (BCE) amorphous Indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) to pattern Mo source/drain. The Mo residue after being etched by H<sub>2</sub>O<sub>2</sub>:NH<sub>3</sub>·H<sub>2</sub>O is removed completely by adjusting the PH value to above 7. The BCE a-IGZO TFTs fabricated with the new solution exhibit excellent performances with the field effect mobility of 12.26 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup>, threshold voltage of 0.17 V and sub-threshold swing of 0.24 V/dec when PH value is 9.8. The threshold voltage shift of the device is less than -0.5 V under gate-bias voltage stress of ±30V for 1hour.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123486234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543616
T. Suemasu
We fabricated p-BaSi2/n-Si solar cells by forming a 20-nm-thick B-doped p-BaSi2 epitaxial layer (p = 2.2 × 1018 cm-3) on an n-Si(111) substrate (ρ = 1-4 Ω cm) by molecular beam epitaxy (MBE). 3-nm-thick amorphous-Si was deposited on the p-BaSi2 surface to prevent the surface oxidation. According to the band alignment of p-BaSi2/n-Si heteroj unction, the separation of photogenerated minority carriers is promoted at the heterointerface. We recorded conversion efficiency of 9.0 % under AM1.5 illumination at 25°C. Short-circuit current density of 31.9 mA/cm2, open-circuit voltage of 0.46 V, and fill factor of 0.60 were obtained. These results suggest the potential of BaSi2 for solar cell application.
{"title":"Recent progress in BaSi2 solar cells","authors":"T. Suemasu","doi":"10.1109/AM-FPD.2016.7543616","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543616","url":null,"abstract":"We fabricated p-BaSi<sub>2</sub>/n-Si solar cells by forming a 20-nm-thick B-doped p-BaSi<sub>2</sub> epitaxial layer (p = 2.2 × 10<sup>18</sup> cm<sup>-3</sup>) on an n-Si(111) substrate (ρ = 1-4 Ω cm) by molecular beam epitaxy (MBE). 3-nm-thick amorphous-Si was deposited on the p-BaSi<sub>2</sub> surface to prevent the surface oxidation. According to the band alignment of p-BaSi<sub>2</sub>/n-Si heteroj unction, the separation of photogenerated minority carriers is promoted at the heterointerface. We recorded conversion efficiency of 9.0 % under AM1.5 illumination at 25°C. Short-circuit current density of 31.9 mA/cm<sup>2</sup>, open-circuit voltage of 0.46 V, and fill factor of 0.60 were obtained. These results suggest the potential of BaSi<sub>2</sub> for solar cell application.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126906611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-02-08DOI: 10.1109/AM-FPD.2016.7543675
Kosuke Ota, S. Kimura, M. Hasumi, Ayuta Suzuki, M. Ushijima, T. Sameshima
We report diffusing boron and phosphorus dopant atoms in silicon with impurity sources of BOx and POx layers formed on the top surfaces of n- and p-type crystalline silicon substrates. The silicon samples with impurity sources were subsequently covered with carbon powders to effectively absorb 2.45 GHz microwave power. Microwave irradiation at 1000 W for 27 s rapidly heated the carbon powders to 1265°C. The sheet resistivity of the samples decreased to 29 and 16 Ω/sq because of boron and phosphorus doping by 29-s-microwave heating. The photo-induced minority carrier lifetime increased to 2.0×10-5 and 3.5×10-5 s by 20- and 14-s-microwave heating for the boron- and phosphorus-doped samples. Boron atoms with a concentration above 1020 cm-3 diffused 150 nm deep by 26-s-microwave heating. Achievements of diode rectified characteristics and photovoltaic effect demonstrate pn junction formation at the top surface region by the present doping method.
{"title":"Microwave rapid heating used for diffusing impurities in silicon","authors":"Kosuke Ota, S. Kimura, M. Hasumi, Ayuta Suzuki, M. Ushijima, T. Sameshima","doi":"10.1109/AM-FPD.2016.7543675","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543675","url":null,"abstract":"We report diffusing boron and phosphorus dopant atoms in silicon with impurity sources of BOx and POx layers formed on the top surfaces of n- and p-type crystalline silicon substrates. The silicon samples with impurity sources were subsequently covered with carbon powders to effectively absorb 2.45 GHz microwave power. Microwave irradiation at 1000 W for 27 s rapidly heated the carbon powders to 1265°C. The sheet resistivity of the samples decreased to 29 and 16 Ω/sq because of boron and phosphorus doping by 29-s-microwave heating. The photo-induced minority carrier lifetime increased to 2.0×10-5 and 3.5×10-5 s by 20- and 14-s-microwave heating for the boron- and phosphorus-doped samples. Boron atoms with a concentration above 1020 cm-3 diffused 150 nm deep by 26-s-microwave heating. Achievements of diode rectified characteristics and photovoltaic effect demonstrate pn junction formation at the top surface region by the present doping method.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123806416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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