Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543673
J. Shieh, Chengyun You, Jian Ming Liu, C. Chiu
While nanostructured surface such as black silicon is an efficiency way to reduce the surface reflection, the high surface area impedes the application of photoelectronic conversion. On the other hand, micropillar is a promising alternative to efficiently collect carriers, but the pillar diameter is usually larger than the wavelength of light that makes surface reflection high. In this study we report an approach to reduce the surface reflection of micropillars by combining micropillar and nanostructure to create a superstructure that concurrently improves the electrical and optical properties. We found that the averaged reflection was reduced from 16.73% to 9.63%, and the efficiency was increased from 9.26% to 9.62% via only 2% modification in micropillar height.
{"title":"Improving optical and electrical properties of micropillar and black-Si solar cells by combining them into a superstructure","authors":"J. Shieh, Chengyun You, Jian Ming Liu, C. Chiu","doi":"10.1109/AM-FPD.2016.7543673","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543673","url":null,"abstract":"While nanostructured surface such as black silicon is an efficiency way to reduce the surface reflection, the high surface area impedes the application of photoelectronic conversion. On the other hand, micropillar is a promising alternative to efficiently collect carriers, but the pillar diameter is usually larger than the wavelength of light that makes surface reflection high. In this study we report an approach to reduce the surface reflection of micropillars by combining micropillar and nanostructure to create a superstructure that concurrently improves the electrical and optical properties. We found that the averaged reflection was reduced from 16.73% to 9.63%, and the efficiency was increased from 9.26% to 9.62% via only 2% modification in micropillar height.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115794450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543628
W. Hung, Pin-Yi Chiang
Highly efficient exciplex systems incorporating a 1,3,5-triazine derivative (3N-T2T) as an electron acceptor and caibazole derivative (Tris-PCz) as an electron donor are developed. We employed a simple device structure composed of only Tris-PCz and 3N-T2T as charge-transporting and emitting materials. The combination of the hole and electron mobility of Tris-PCz and 3N-T2T, respectively, the barrier free hole injection from the ITO to the EML and high triplet energies renders the green exciplex device to realize an exceptionally low driving voltage of 3.4 V at 1000 cdm-2 and maximum EQE up to 10.8% (32.7 cdA-1, 38.4 lm W-1).
{"title":"High performance green exciplex OLED","authors":"W. Hung, Pin-Yi Chiang","doi":"10.1109/AM-FPD.2016.7543628","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543628","url":null,"abstract":"Highly efficient exciplex systems incorporating a 1,3,5-triazine derivative (3N-T2T) as an electron acceptor and caibazole derivative (Tris-PCz) as an electron donor are developed. We employed a simple device structure composed of only Tris-PCz and 3N-T2T as charge-transporting and emitting materials. The combination of the hole and electron mobility of Tris-PCz and 3N-T2T, respectively, the barrier free hole injection from the ITO to the EML and high triplet energies renders the green exciplex device to realize an exceptionally low driving voltage of 3.4 V at 1000 cdm-2 and maximum EQE up to 10.8% (32.7 cdA-1, 38.4 lm W-1).","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115016719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543617
H. Katagiri, K. Jimbo
About 20 years ago, in 1995, we had started to develop the novel thin film solar cells using CZTS as an absorber to be able to use in the after next generation. The conversion efficiency of CZTS thin film solar cells reported for the first time in 1996 was only 0.66% and it had been improved to about 7% in our laboratory. Because the potential of CZTS-based thin film solar cells seems to be quite high, we will be able to overcome the resource problem of rare-metal in the near future. In this review manuscript we will survey our previous works and show the recent results concerning with this promising solar cells.
{"title":"Fabrication of earth-abundant CZTS thin film solar cells","authors":"H. Katagiri, K. Jimbo","doi":"10.1109/AM-FPD.2016.7543617","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543617","url":null,"abstract":"About 20 years ago, in 1995, we had started to develop the novel thin film solar cells using CZTS as an absorber to be able to use in the after next generation. The conversion efficiency of CZTS thin film solar cells reported for the first time in 1996 was only 0.66% and it had been improved to about 7% in our laboratory. Because the potential of CZTS-based thin film solar cells seems to be quite high, we will be able to overcome the resource problem of rare-metal in the near future. In this review manuscript we will survey our previous works and show the recent results concerning with this promising solar cells.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"238 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115108462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543672
Ting-Ting Ren, M. Wei, Chin-Chiang Hsiao, Bo-Yi Chen, Mei-Yi Li, Jui-Min Liou, F. Ko, Y. Lai
This research describes the p-type nanostalactites (p-type NS) with high photothermal conversion capability has been demonstrated by rapid INC process without extra heat treatment. In optical property, p-type NS has ultralow reflectance below 5 % and high light absorption due to rough structures in the broadband wavelength (350 nm-1100 nm). It looks like a black body. Silicon, an indirect band material, can release thermal energy during the recombination process of photo-generated electron-hole pairs. P-type NS converts photon energy into heat rapidly and then photothermal effect occurs. Then, the temperature change of p-type NS is faster in 10 second than bulk p-type silicon. These nanostructures can not only enhance thermal conversion efficiency but be regarded as a great heat absorber.
{"title":"High photothermal properties in silicon nanostructures","authors":"Ting-Ting Ren, M. Wei, Chin-Chiang Hsiao, Bo-Yi Chen, Mei-Yi Li, Jui-Min Liou, F. Ko, Y. Lai","doi":"10.1109/AM-FPD.2016.7543672","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543672","url":null,"abstract":"This research describes the p-type nanostalactites (p-type NS) with high photothermal conversion capability has been demonstrated by rapid INC process without extra heat treatment. In optical property, p-type NS has ultralow reflectance below 5 % and high light absorption due to rough structures in the broadband wavelength (350 nm-1100 nm). It looks like a black body. Silicon, an indirect band material, can release thermal energy during the recombination process of photo-generated electron-hole pairs. P-type NS converts photon energy into heat rapidly and then photothermal effect occurs. Then, the temperature change of p-type NS is faster in 10 second than bulk p-type silicon. These nanostructures can not only enhance thermal conversion efficiency but be regarded as a great heat absorber.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115401345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543674
Chien-Chieh Lee, Y. Hsieh, Tomi T. T. Li, Jenq-Yang Chang
The formation of p-n junctions is a crucial step in the fabrication of photovoltaic devices. Standard processes such as high temperature (> 800 °C) diffusion cannot provide the shallow doped layers, with abrupt interfaces. In this study, the epitaxial-like boron-doped silicon (epi-Si) thin films as emitters of c-Si solar cells with structure of ITO/epi-Si(p+)/c-Si(n) are investigated under the modulation of deposited parameters, such as gas ratio, and working pressure. Applying the epi-Si:H (p+) shallow junction with abrupt interface leads to improve the short curent density (Jsc) of the planar c-Si solar cell is higher than 36 mA/cm2, and efficiency reaches above 15%.
{"title":"Doping profile control of epitaxial-like Si emitting layer for the application of c-Si solar cells","authors":"Chien-Chieh Lee, Y. Hsieh, Tomi T. T. Li, Jenq-Yang Chang","doi":"10.1109/AM-FPD.2016.7543674","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543674","url":null,"abstract":"The formation of p-n junctions is a crucial step in the fabrication of photovoltaic devices. Standard processes such as high temperature (> 800 °C) diffusion cannot provide the shallow doped layers, with abrupt interfaces. In this study, the epitaxial-like boron-doped silicon (epi-Si) thin films as emitters of c-Si solar cells with structure of ITO/epi-Si(p+)/c-Si(n) are investigated under the modulation of deposited parameters, such as gas ratio, and working pressure. Applying the epi-Si:H (p+) shallow junction with abrupt interface leads to improve the short curent density (Jsc) of the planar c-Si solar cell is higher than 36 mA/cm2, and efficiency reaches above 15%.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123310503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543647
Xin Ju, Xiang Xiao, Yuxiang Xiao, Shengdong Zhang
In this work, we study threshold voltage (Vth) shift degradation in amorphous IGZO (a-IGZO) TFTs. The TFTs employ the bottom-gate staggered structure with an etch stopped layer. An improvement is presented to well known stretched-exponential equation for the Vth shift, and a systematic extraction method is provided. The Vth shift in a-IGZO TFTs is estimated quantitatively under different gate bias stress and temperature. Good agreements are obtained between calculated results and measured data.
{"title":"Estimation of threshold voltage shift in a-IGZO TFTs under different bias temperature stress by improved stretched-exponential equation","authors":"Xin Ju, Xiang Xiao, Yuxiang Xiao, Shengdong Zhang","doi":"10.1109/AM-FPD.2016.7543647","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543647","url":null,"abstract":"In this work, we study threshold voltage (Vth) shift degradation in amorphous IGZO (a-IGZO) TFTs. The TFTs employ the bottom-gate staggered structure with an etch stopped layer. An improvement is presented to well known stretched-exponential equation for the Vth shift, and a systematic extraction method is provided. The Vth shift in a-IGZO TFTs is estimated quantitatively under different gate bias stress and temperature. Good agreements are obtained between calculated results and measured data.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130061031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543687
Chia-En Wu, Chih-Lung Lin, Ming-Xun Wang
This work develops a pixel circuit for in-plane switching blue-phase liquid crystal displays (IPS BPLCDs) integrated with amorphous indium-gallium-zinc-oxide thin-film-transistors (a-IGZO TFTs). The proposed circuit enlarges the range of operation voltage of BPLC by selecting different bias voltage signals to achieve maximum transmittance of BPLCs. Polarity inversion is also combined with the source follower structure. Simulation results show that the proposed circuit increases the operation voltage to -50 V to 50 V and the error voltages over the entire range of operation voltage are all below 1.2 V demonstrating the feasibility and the reliability of the proposed circuit for practical BPLCD applications.
{"title":"Blue-phase pixel circuit design to enlarge operation voltage and combine polarity inversion with a-IGZO thin-film-transistors","authors":"Chia-En Wu, Chih-Lung Lin, Ming-Xun Wang","doi":"10.1109/AM-FPD.2016.7543687","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543687","url":null,"abstract":"This work develops a pixel circuit for in-plane switching blue-phase liquid crystal displays (IPS BPLCDs) integrated with amorphous indium-gallium-zinc-oxide thin-film-transistors (a-IGZO TFTs). The proposed circuit enlarges the range of operation voltage of BPLC by selecting different bias voltage signals to achieve maximum transmittance of BPLCs. Polarity inversion is also combined with the source follower structure. Simulation results show that the proposed circuit increases the operation voltage to -50 V to 50 V and the error voltages over the entire range of operation voltage are all below 1.2 V demonstrating the feasibility and the reliability of the proposed circuit for practical BPLCD applications.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127571083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543605
T. Itoh
New technique to measure local photovoltaic properties of Si based thin film solar cells has been developed using scanning probe microscopy technique. Local photovoltaic properties of hydrogenated amorphous silicon (a-Si:H) thin film solar cell was demonstrated using this technique. Short-circuit current obtained from local current-voltage (I-V) characteristics with light irradiation increased with increasing the irradiation light power. The value of the open-circuit voltage obtained from local I-V characteristics with light irradiation was almost the same as that obtained from macroscopic one. In the a-Si:H thin film solar cell used in this work, the local photovoltaic properties was not uniform in the scanning area.
{"title":"Local photovoltaic characterization of Si thin film solar cells","authors":"T. Itoh","doi":"10.1109/AM-FPD.2016.7543605","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543605","url":null,"abstract":"New technique to measure local photovoltaic properties of Si based thin film solar cells has been developed using scanning probe microscopy technique. Local photovoltaic properties of hydrogenated amorphous silicon (a-Si:H) thin film solar cell was demonstrated using this technique. Short-circuit current obtained from local current-voltage (I-V) characteristics with light irradiation increased with increasing the irradiation light power. The value of the open-circuit voltage obtained from local I-V characteristics with light irradiation was almost the same as that obtained from macroscopic one. In the a-Si:H thin film solar cell used in this work, the local photovoltaic properties was not uniform in the scanning area.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130249697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We propose a self-aligned top-gate amorphous InGaZnO thin film transistor (a-IGZO TFT) with source/drain treated by N2 plasma. By comparing the performances of the self-aligned top-gate a-IGZO TFTs with N2 and Ar plasma treatment, it is found that N2 plasma treatment can effectively decrease the resistivity of the a-IGZO. The TFTs with N2 plasma treated source/drain have the comparable electrical performance and superior stress stability compared to the Ar plasma treated one. The fabricated self-aligned top-gate a-IGZO TFT with N2 plasma treatment exhibits field-effect mobility of 5.1cm2/V·s, threshold voltage of -0.33 V, a subthreshold swing of 0.26V/dec, and a shift of Vth of -0.65 V and 0.52 V under PBS and NBS with gate-bias stress voltage of+30V respectively.
{"title":"Comparison of N2 and ar plasma treatment for source/drain formation in self-aligned top-gate amorphous InGaZnO thin film transistor","authors":"Hongjuan Lu, Chongyang Ren, Xiang Xiao, Yuxiang Xiao, Cuicui Wang, Shengdong Zhang","doi":"10.1109/AM-FPD.2016.7543642","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543642","url":null,"abstract":"We propose a self-aligned top-gate amorphous InGaZnO thin film transistor (a-IGZO TFT) with source/drain treated by N2 plasma. By comparing the performances of the self-aligned top-gate a-IGZO TFTs with N2 and Ar plasma treatment, it is found that N2 plasma treatment can effectively decrease the resistivity of the a-IGZO. The TFTs with N2 plasma treated source/drain have the comparable electrical performance and superior stress stability compared to the Ar plasma treated one. The fabricated self-aligned top-gate a-IGZO TFT with N2 plasma treatment exhibits field-effect mobility of 5.1cm2/V·s, threshold voltage of -0.33 V, a subthreshold swing of 0.26V/dec, and a shift of Vth of -0.65 V and 0.52 V under PBS and NBS with gate-bias stress voltage of+30V respectively.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124563585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Min-Chuan Wang, Y. Chen, Ming-Hao Hsieh, W. Tsai, D. Jan
The all-solid-state electrochromic device (ECD) integrated with near-IR (NIR) blocking layer has been developed for image sensor and energy-saving glass application. The all-solid-state ECD integrated with NIR blocking layer could potentially control the transmittance from 70.5% to 17.5% at 550nm in the visible region and from 39% to 9% at the NIR wavelength larger than 1100nm. The NIR blocking all-solid-state ECD with the one substrate structure of NiO/Ta2O5/WO3/ ITO on NIR blocking transparent conductive oxide (TCO) coated glass was prepared at room temperature by reactive DC magnetron sputtering technique. With the application of ECDs, it is possible to directly apply the device onto an image sensor and energy-saving glass with the NIR rejection function even in the bleached state. Furthermore, the low resistance NIR blocking TCO also provided the lower power consumption in the switching cycle at voltages as low as 5 V, make ECDs the ideal components for battery powered applications.
{"title":"All-solid-state electrochromic device integrated with near-IR blocking layer for image sensor and energy-saving glass application","authors":"Min-Chuan Wang, Y. Chen, Ming-Hao Hsieh, W. Tsai, D. Jan","doi":"10.1063/1.4962842","DOIUrl":"https://doi.org/10.1063/1.4962842","url":null,"abstract":"The all-solid-state electrochromic device (ECD) integrated with near-IR (NIR) blocking layer has been developed for image sensor and energy-saving glass application. The all-solid-state ECD integrated with NIR blocking layer could potentially control the transmittance from 70.5% to 17.5% at 550nm in the visible region and from 39% to 9% at the NIR wavelength larger than 1100nm. The NIR blocking all-solid-state ECD with the one substrate structure of NiO/Ta2O5/WO3/ ITO on NIR blocking transparent conductive oxide (TCO) coated glass was prepared at room temperature by reactive DC magnetron sputtering technique. With the application of ECDs, it is possible to directly apply the device onto an image sensor and energy-saving glass with the NIR rejection function even in the bleached state. Furthermore, the low resistance NIR blocking TCO also provided the lower power consumption in the switching cycle at voltages as low as 5 V, make ECDs the ideal components for battery powered applications.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"12 42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131383240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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