Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543697
Kazushi Hayashi, Mototaka Ochi, A. Hino, Hiroaki Tao, H. Goto, T. Kugimiya
A comparative study on light-induced negative-bias stress stabilities in amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) was performed by means of photoinduced transient spectroscopy (PITS). When the a-IGZO thin films were deposited with 4% O2 partial pressure (P/P), a dominant peak with a maximum of around 100 K was clearly observed from the sample. There was a flow rate of SiH4/N2O of 4/100 sccm for the ESL deposition, while the PITS spectra from the sample with a flow rate of SiH4/N2O of 6/150 sccm possessed a broader peak of around 115 K and an apparent shoulder of around 200-280 K was observed. This shoulder of around the 200-280 K was clarified when the a-IGZO thin film was deposited with an O2 P/P of 20 % In accordance with the changes in the electronic structures in the a-IGZO thin films due to the ESL deposition, the stability of the TFTs against the negative bias thermal Illumination stress (NBTIS) was degraded; the value of the Vth shift after the 2h-NBTIS test was increased from 2.5 to 6.0 V The decreasing the compensating acceptors and/or the increasing the hydrogen-related donors could be the origin of the negative Vth shift during the NBTIS test.
利用光致瞬态光谱(PITS)对非晶in - ga - zn - o (A - igzo)薄膜晶体管(TFTs)的光致负偏置应力稳定性进行了比较研究。当a- igzo薄膜在4% O2分压(P/P)下沉积时，样品明显观察到一个峰值在100 K左右的优势峰。ESL沉积的SiH4/N2O流速为4/100 sccm，而SiH4/N2O流速为6/150 sccm时，样品的PITS光谱在115 K附近有一个更宽的峰，在200-280 K附近有一个明显的肩。当O2 P/P为20%时，a-IGZO薄膜在200- 280k附近的肩部被澄清。由于ESL沉积导致a-IGZO薄膜电子结构的变化，tft对负偏置热照明应力(NBTIS)的稳定性下降;2h-NBTIS测试后的Vth位移值由2.5 V增加到6.0 V，补偿受体的减少和/或氢相关供体的增加可能是NBTIS测试期间负Vth位移的原因。
{"title":"Comparative study on light-induced negative-bias stress stabilities in amorphous In-Ga-Zn-O thin film transistors with photoinduced transient spectroscopy","authors":"Kazushi Hayashi, Mototaka Ochi, A. Hino, Hiroaki Tao, H. Goto, T. Kugimiya","doi":"10.1109/AM-FPD.2016.7543697","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543697","url":null,"abstract":"A comparative study on light-induced negative-bias stress stabilities in amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) was performed by means of photoinduced transient spectroscopy (PITS). When the a-IGZO thin films were deposited with 4% O2 partial pressure (P/P), a dominant peak with a maximum of around 100 K was clearly observed from the sample. There was a flow rate of SiH4/N2O of 4/100 sccm for the ESL deposition, while the PITS spectra from the sample with a flow rate of SiH4/N2O of 6/150 sccm possessed a broader peak of around 115 K and an apparent shoulder of around 200-280 K was observed. This shoulder of around the 200-280 K was clarified when the a-IGZO thin film was deposited with an O2 P/P of 20 % In accordance with the changes in the electronic structures in the a-IGZO thin films due to the ESL deposition, the stability of the TFTs against the negative bias thermal Illumination stress (NBTIS) was degraded; the value of the Vth shift after the 2h-NBTIS test was increased from 2.5 to 6.0 V The decreasing the compensating acceptors and/or the increasing the hydrogen-related donors could be the origin of the negative Vth shift during the NBTIS test.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114407349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543685
Seung-Hwan Lee, Jae-Sung An, Seongkwan Hong, O. Kwon
This paper proposes an in-cell capacitive touch panel structure and a readout circuit (ROIC) to sense the variation in self-capacitance using a small number of sensing lines. The proposed touch panel structure sequentially senses the variation in self-capacitance by adding a thin-film transistor and a scan signal line into each touch sensor so that the number of sensing lines can be reduced. In addition, the proposed ROIC enhances the signal-to-noise ratio (SNR) by compensating for the stray capacitance. The simulation results show that the proposed ROIC achieves an SNR of 57 dB. Moreover, the number of sensing lines per inch is 6.7 and 230.8 using the proposed active self-capacitive sensing method and the advanced in-cell touch (AIT) technology, respectively. Therefore, the proposed active self-capacitive sensing method reduces the number of sensing lines by 97.10 % compared with the AIT technology, while maintaining high sensitivity and multi-touch sensing capability.
{"title":"In-cell capacitive touch panel structures and their readout circuits","authors":"Seung-Hwan Lee, Jae-Sung An, Seongkwan Hong, O. Kwon","doi":"10.1109/AM-FPD.2016.7543685","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543685","url":null,"abstract":"This paper proposes an in-cell capacitive touch panel structure and a readout circuit (ROIC) to sense the variation in self-capacitance using a small number of sensing lines. The proposed touch panel structure sequentially senses the variation in self-capacitance by adding a thin-film transistor and a scan signal line into each touch sensor so that the number of sensing lines can be reduced. In addition, the proposed ROIC enhances the signal-to-noise ratio (SNR) by compensating for the stray capacitance. The simulation results show that the proposed ROIC achieves an SNR of 57 dB. Moreover, the number of sensing lines per inch is 6.7 and 230.8 using the proposed active self-capacitive sensing method and the advanced in-cell touch (AIT) technology, respectively. Therefore, the proposed active self-capacitive sensing method reduces the number of sensing lines by 97.10 % compared with the AIT technology, while maintaining high sensitivity and multi-touch sensing capability.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114378358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543640
A. Hara, Yuya Nishimura, H. Ohsawa
Polyaystalline-germanium (poly-Ge) thin-film transistors (TFTs) are good candidates for next-generation TFTs for use in the backplane of flat-panel displays (FPDs). This is due to their superior electrical properties compared to those of Si and oxide semiconductors. However, poly-Ge shows a strong p-type characteristic; thus, it is not easy to reduce the leakage current using a single-gate (SG) structure. In this study, self-aligned metal double-gate (MeDG) junctionless (JL) p-channel (p-ch) low-temperature (LT) poly-Ge TFTs were fabricated on a glass substrate using a 15-nm-thick solid phase crystallized (SPC) poly-Ge film. Additionally, SG JL p-ch LT poly-Ge TFTs with 15-nm-thick SPC poly-Ge films were fabricated as reference TFTs. The self-aligned MeDG JL p-ch LT poly-Ge TFT shows superior performance compared to that of SG JL p-ch LT poly-Ge TFT.
聚锗薄膜晶体管(TFTs)是用于平板显示器(FPDs)背板的下一代TFTs的良好候选者。这是由于与硅和氧化物半导体相比，它们具有优越的电性能。而poly-Ge表现出较强的p型特征;因此，采用单栅(SG)结构不容易减小漏电流。在本研究中，使用15 nm厚的固相结晶(SPC)聚锗薄膜，在玻璃衬底上制备了自取向金属双栅(MeDG)无结(JL) p沟道(p-ch)低温(LT)聚锗tft。另外，制备了SG JL p-ch ltft和15nm厚SPC - gft作为参考tft。与SG JL p-ch LT - ge TFT相比，自对准的MeDG JL p-ch LT - ge TFT表现出更好的性能。
{"title":"Self-aligned metal double-gate junctionless p-channel low-temperature polycrystalline-germanium thin-film transistors with a thin germanium channel on a glass substrate","authors":"A. Hara, Yuya Nishimura, H. Ohsawa","doi":"10.1109/AM-FPD.2016.7543640","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543640","url":null,"abstract":"Polyaystalline-germanium (poly-Ge) thin-film transistors (TFTs) are good candidates for next-generation TFTs for use in the backplane of flat-panel displays (FPDs). This is due to their superior electrical properties compared to those of Si and oxide semiconductors. However, poly-Ge shows a strong p-type characteristic; thus, it is not easy to reduce the leakage current using a single-gate (SG) structure. In this study, self-aligned metal double-gate (MeDG) junctionless (JL) p-channel (p-ch) low-temperature (LT) poly-Ge TFTs were fabricated on a glass substrate using a 15-nm-thick solid phase crystallized (SPC) poly-Ge film. Additionally, SG JL p-ch LT poly-Ge TFTs with 15-nm-thick SPC poly-Ge films were fabricated as reference TFTs. The self-aligned MeDG JL p-ch LT poly-Ge TFT shows superior performance compared to that of SG JL p-ch LT poly-Ge TFT.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114981234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543604
X. Shao, Siyuan Lu, H. Hamann
Renewable energy forecasting becomes increasingly important as the contribution of solar/wind power production to the electrical power grid constantly increases. Significant improvement in forecasting accuracy has been demonstrated by developing more sophisticated solar irradiance forecasting models using statistics and/or numerical weather predictions. In this presentation, we report the development of a machine-learning based multi-model blending approach for statistically combing multiple meteorological models to improve the accuracy of solar power forecasting. The system leverages upon multiple existing physical models for prediction including numerous atmospheric and cloud prediction models based on satellite imagery as well as numerical weather prediction (NWP) products.
{"title":"Solar radiation forecast with machine learning","authors":"X. Shao, Siyuan Lu, H. Hamann","doi":"10.1109/AM-FPD.2016.7543604","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543604","url":null,"abstract":"Renewable energy forecasting becomes increasingly important as the contribution of solar/wind power production to the electrical power grid constantly increases. Significant improvement in forecasting accuracy has been demonstrated by developing more sophisticated solar irradiance forecasting models using statistics and/or numerical weather predictions. In this presentation, we report the development of a machine-learning based multi-model blending approach for statistically combing multiple meteorological models to improve the accuracy of solar power forecasting. The system leverages upon multiple existing physical models for prediction including numerous atmospheric and cloud prediction models based on satellite imagery as well as numerical weather prediction (NWP) products.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123656135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543602
H. Ohsawa, Hitoshi Suzuki, S. Kuwano, A. Hara
This study presents an evaluation of pH sensors using self-aligned four-terminal planar embedded metal double-gate low-temperature polycrystalline-silicon thin-film transistors (TFTs) on a glass substrate. The voltage variation due to a change in pH is read as the variation in threshold voltage of the TFTs by connecting a TFT control gate to a glass electrode. Our experimental results confirm that these TFTs can be successfully used as pH sensors.
{"title":"Evaluation of pH sensors using self-aligned four-terminal planar embedded metal double-gate low-temperature polycrystalline-silicon thin-film transistors on glass substrate","authors":"H. Ohsawa, Hitoshi Suzuki, S. Kuwano, A. Hara","doi":"10.1109/AM-FPD.2016.7543602","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543602","url":null,"abstract":"This study presents an evaluation of pH sensors using self-aligned four-terminal planar embedded metal double-gate low-temperature polycrystalline-silicon thin-film transistors (TFTs) on a glass substrate. The voltage variation due to a change in pH is read as the variation in threshold voltage of the TFTs by connecting a TFT control gate to a glass electrode. Our experimental results confirm that these TFTs can be successfully used as pH sensors.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"17 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120873251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543652
Hisashi Hayashi, Katsuya Kito, Shuhei Kitajima, Toshimasa Hori, T. Matsuda, M. Kimura
We have developed a hybrid-type temperature sensor using thin-film transistors generating rectangle output waveform. The advantages of the hybrid-type temperature sensor are that the large temperature dependence of the off-leakage current can be utilized, and simultaneously only a digital circuit is required to count the digital pulse. However, the conventional hybrid-type sensor has a disadvantage that the pulse width is too small to count. Therefore, we have developed a new hybrid-type temperature sensor in order to enlarge the pulse width. Although we previously confirmed the operation by circuit simulation, particularly in this presentation, we have made an actual circuit and observed a rectangle output waveform, namely, confirmed the correct operation by actual experiment.
{"title":"Hybrid-type temperature sensor using thin-film transistors generating rectangle output waveform — Operating confirmation by actual experiment","authors":"Hisashi Hayashi, Katsuya Kito, Shuhei Kitajima, Toshimasa Hori, T. Matsuda, M. Kimura","doi":"10.1109/AM-FPD.2016.7543652","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543652","url":null,"abstract":"We have developed a hybrid-type temperature sensor using thin-film transistors generating rectangle output waveform. The advantages of the hybrid-type temperature sensor are that the large temperature dependence of the off-leakage current can be utilized, and simultaneously only a digital circuit is required to count the digital pulse. However, the conventional hybrid-type sensor has a disadvantage that the pulse width is too small to count. Therefore, we have developed a new hybrid-type temperature sensor in order to enlarge the pulse width. Although we previously confirmed the operation by circuit simulation, particularly in this presentation, we have made an actual circuit and observed a rectangle output waveform, namely, confirmed the correct operation by actual experiment.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124776763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543641
Man Zhang, Xiang Xiao, Xin Ju, Xiaodong Zhang, Shengdong Zhang
The influence of substrate bias during sputtering on the amorphous indium-gallium-zinc-oxide (a-IGZO) film and back-channel-etch (BCE) a-IGZO TFT is investigated. A mediated substrate bias is benefit to the improvement of a-IGZO film. The BCE a-IGZO TFT with mediate substrate bias of -90 V exhibits good performances with a field effect mobility (μfe) of 7.45 cm2/V·s, a subthreshold swing (SS) of 0.52 V/Dec and an Ion/Ioff current ratio of 109. The gate-bias stress stability is improved by substrate bias with ΔVth was 1.76 V under PBS and -0.88 V under NBS.
{"title":"Characteristics of amorphous In-Ga-Zn-O thin-film-transistors with channel layer deposited by bias sputtering","authors":"Man Zhang, Xiang Xiao, Xin Ju, Xiaodong Zhang, Shengdong Zhang","doi":"10.1109/AM-FPD.2016.7543641","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543641","url":null,"abstract":"The influence of substrate bias during sputtering on the amorphous indium-gallium-zinc-oxide (a-IGZO) film and back-channel-etch (BCE) a-IGZO TFT is investigated. A mediated substrate bias is benefit to the improvement of a-IGZO film. The BCE a-IGZO TFT with mediate substrate bias of -90 V exhibits good performances with a field effect mobility (μfe) of 7.45 cm<sup>2</sup>/V·s, a subthreshold swing (SS) of 0.52 V/Dec and an I<sub>on</sub>/I<sub>off</sub> current ratio of 10<sup>9</sup>. The gate-bias stress stability is improved by substrate bias with ΔV<sub>th</sub> was 1.76 V under PBS and -0.88 V under NBS.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129340172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543690
Thuy Nguyen, Mitsuhisa Hiraiwa, T. Hirata, S. Kuroki
(100) surface oriented poly-Si film on glass substrate has been a key requirement to realize high performance low temperature poly-Si thin film transistors (LTPS-TFTs). Using multi-line beam (MLB) continuous-wave laser lateral crystallization (CLC) with overlapping, (100)-dominantly oriented poly-Si film was realized with average grain size of approximately 20 μm × 2 μm in normal surface direction. Ultrahigh-performance LTPS-TFTs were achieved with a very high electron field effect mobility of μFE = 940 cm2/Vs, a high ON/OFF ratio of 105, threshold voltage of 0 V, and subthreshold slope of 0.12 V/dec. This approach is nearly comparable to single crystal Si transistor.
{"title":"Ultrahigh-performance poly-si thin film transistor using multi-line beam continuous-wave laser lateral crystallization","authors":"Thuy Nguyen, Mitsuhisa Hiraiwa, T. Hirata, S. Kuroki","doi":"10.1109/AM-FPD.2016.7543690","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543690","url":null,"abstract":"(100) surface oriented poly-Si film on glass substrate has been a key requirement to realize high performance low temperature poly-Si thin film transistors (LTPS-TFTs). Using multi-line beam (MLB) continuous-wave laser lateral crystallization (CLC) with overlapping, (100)-dominantly oriented poly-Si film was realized with average grain size of approximately 20 μm × 2 μm in normal surface direction. Ultrahigh-performance LTPS-TFTs were achieved with a very high electron field effect mobility of μFE = 940 cm2/Vs, a high ON/OFF ratio of 105, threshold voltage of 0 V, and subthreshold slope of 0.12 V/dec. This approach is nearly comparable to single crystal Si transistor.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129783522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543600
A. Wakamiya
Perovskite solar cells represent cost-effective next generation printable photovoltaics. In a relatively short period, power conversion efficiencies (PCEs) in such cells have been substantially increased, mainly due to improvements of the fabrication protocols for the perovskite layer as well as the development of new materials for buffer layers. In this presentation, the recent progress and perspective on this promising new type of photovoltaics are introduced, including our approaches toward development of high PCE cells in terms of materials science.
{"title":"Recent progress on perovskite solar cells and our materials science","authors":"A. Wakamiya","doi":"10.1109/AM-FPD.2016.7543600","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543600","url":null,"abstract":"Perovskite solar cells represent cost-effective next generation printable photovoltaics. In a relatively short period, power conversion efficiencies (PCEs) in such cells have been substantially increased, mainly due to improvements of the fabrication protocols for the perovskite layer as well as the development of new materials for buffer layers. In this presentation, the recent progress and perspective on this promising new type of photovoltaics are introduced, including our approaches toward development of high PCE cells in terms of materials science.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"35 14","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114100126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543682
S. M. Iftiquar, J. Yi
Methyl ammonium lead halide (CH3NH3PM3) is one of the most promising organic inorganic lead halide perovskite material that can be used as an active layer in photovoltaic solar cell. Its high photo sensitivity, carrier lifetime, diffusion length are few of the interesting characteristics useful in a such a device. We theoretically investigated a tandem solar cell, consisting of a perovskite type top cell and a crystalline silicon bottom cell and observed that the device efficiency can be as high as 24.9%.
{"title":"Investigation of high efficiency methyl ammonium lead halide perovskite-Si tandem solar cell","authors":"S. M. Iftiquar, J. Yi","doi":"10.1109/AM-FPD.2016.7543682","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543682","url":null,"abstract":"Methyl ammonium lead halide (CH3NH3PM3) is one of the most promising organic inorganic lead halide perovskite material that can be used as an active layer in photovoltaic solar cell. Its high photo sensitivity, carrier lifetime, diffusion length are few of the interesting characteristics useful in a such a device. We theoretically investigated a tandem solar cell, consisting of a perovskite type top cell and a crystalline silicon bottom cell and observed that the device efficiency can be as high as 24.9%.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115291818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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