We reported a blue phosphorescent organic light-emitting diode (OLED) with the highest current efficiency of 55.2 cd/A, power efficiency of 50.5 lm/W and external quantum efficiency (EQE) of 24.8%, by using a tetraphenylsilane host in the emitting layer doped with blue emitter, bis[2-(4,6-difluorophenyl)pyridinato-C2,N](picolinato)iridium(in) (FIrpic).
{"title":"High efficiency blue phosphorescent organic light-emitting diode using tetraphenylsilane core molecule as host material","authors":"Cheng-Pin Chen, Cyong-Huei Huang, Jiu-Haw Lee, Chi-feng Lin, Tien‐Lung Chiu, M. Leung","doi":"10.1109/AM-FPD.2016.7543636","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543636","url":null,"abstract":"We reported a blue phosphorescent organic light-emitting diode (OLED) with the highest current efficiency of 55.2 cd/A, power efficiency of 50.5 lm/W and external quantum efficiency (EQE) of 24.8%, by using a tetraphenylsilane host in the emitting layer doped with blue emitter, bis[2-(4,6-difluorophenyl)pyridinato-C2,N](picolinato)iridium(in) (FIrpic).","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"305 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116221349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543679
M. Lin, Shang-Hsuan Wu, Y. Kang, Yia-Chung Chang, C. Chu
ITO-free inverted SMPV1:PC71BM solar cells with an Al doped ZnO (AZO) transparent electrodes are fabricated. The AZO thin film prepared by pulsed laser deposition (PLD) technique exhibits high transmission (>85%) and low sheet resistance (~30 Ω/sq). The absorption spectrums of devices are also simulated by RCWA method to optimize the performance of photocurrent response. The power conversion efficiency of ITO-free inverted small molecule solar cell can reach 4.03% which is close to that of ITO based small molecule solar cell.
{"title":"ITO-free inverted small molecule solar cells","authors":"M. Lin, Shang-Hsuan Wu, Y. Kang, Yia-Chung Chang, C. Chu","doi":"10.1109/AM-FPD.2016.7543679","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543679","url":null,"abstract":"ITO-free inverted SMPV1:PC71BM solar cells with an Al doped ZnO (AZO) transparent electrodes are fabricated. The AZO thin film prepared by pulsed laser deposition (PLD) technique exhibits high transmission (>85%) and low sheet resistance (~30 Ω/sq). The absorption spectrums of devices are also simulated by RCWA method to optimize the performance of photocurrent response. The power conversion efficiency of ITO-free inverted small molecule solar cell can reach 4.03% which is close to that of ITO based small molecule solar cell.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125931743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543686
Kenshi Tada, Kazutoshi Kida, Shinji Yamagishi, T. Maruyama, J. Mugiraneza, Y. Sugita, Hidetsugu Kawamori, T. Saitoh, H. Shioe
We have developed a high-definition in-cell (HDI) touch panel technology that uses a parallel scanning method. This technology can be incorporated into various TFT backplanes including LTPS TFT and IGZO TFT. We have developed 5.7” WQHD LTPS LCD and 4.95” FHD IGZO LCD, both of which are integrated in-cell touch panels. A Nega-type liquid crystal (LC) material for IPS mode was used. The parallel scanning method allows high-definition in-cell touch panel LCDs with good touch panel performance, with SNR over 48.5dB.
{"title":"High-definition in-cell touch panel with parallel scanning method","authors":"Kenshi Tada, Kazutoshi Kida, Shinji Yamagishi, T. Maruyama, J. Mugiraneza, Y. Sugita, Hidetsugu Kawamori, T. Saitoh, H. Shioe","doi":"10.1109/AM-FPD.2016.7543686","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543686","url":null,"abstract":"We have developed a high-definition in-cell (HDI) touch panel technology that uses a parallel scanning method. This technology can be incorporated into various TFT backplanes including LTPS TFT and IGZO TFT. We have developed 5.7” WQHD LTPS LCD and 4.95” FHD IGZO LCD, both of which are integrated in-cell touch panels. A Nega-type liquid crystal (LC) material for IPS mode was used. The parallel scanning method allows high-definition in-cell touch panel LCDs with good touch panel performance, with SNR over 48.5dB.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130215478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543696
K. Ide, Mitsuho Kikuchi, M. Sasase, H. Hiramatsu, H. Kumomi, H. Hosono, T. Kamiya
Film density of amorphous In-Ga-Zn-O (a-IGZO) was varied in a wide range to investigate the origin of the low film density and its effect on thin-film transistor (TFT) characteristics. Device-quality a-IGZO films have the densities ~ 6.1 g/cm3, which is ~5% smaller than that of single-crystal InGaZnO4 (c-IGZO) (6.4 g/cm3). On the other hand, extremely low density of 5.5 g/cm3 was obtained when the sputtering working pressure (PTot) was increased to 5 Pa. High density desorption of H2O and O2 was detected in the low-density films, which are attributed to an origin of the low density. Although the low-density channel produced poor TFTs, good TFT characteristics were obtained by annealing at Tann = 300°C. The densities of the low-density films obtained by X-ray reflectivity (XRR) analysis were, however, almost unchanged up to Tann = 500°C, while spectroscopic ellipsometry (SE) analysis showed that densification started from 100°C. This contradiction is explained by transmission electron microscopy (TEM). Although conventional high-resolution TEM (HR-TEM) observation could not detect a microstructure in the high-density a-IGZO films, high-angle annular dark field scanning TEM (HAADF-STEM) detected nano-scale low-density regions. The low-density films had larger and more voids. These void structures were not found in very thin regions (5-10 nm from the substrate surface) but increased in thicker regions.
为了研究非晶in- ga - zn - o (a- igzo)薄膜密度低的原因及其对薄膜晶体管(TFT)特性的影响，研究了非晶in- ga - zn - o (a- igzo)薄膜密度在较大范围内的变化。器件级a-IGZO薄膜的密度为6.1 g/cm3，比单晶InGaZnO4 (c-IGZO)的密度(6.4 g/cm3)小5%。另一方面，当溅射工作压力(pto)增加到5 Pa时，获得的密度极低，为5.5 g/cm3。在低密度薄膜中检测到高浓度的H2O和O2解吸，这归因于低密度的起源。虽然低密度通道产生较差的TFT，但通过在Tann = 300°C下退火获得了良好的TFT特性。然而，通过x射线反射率(XRR)分析得到的低密度薄膜的密度在Tann = 500°C时几乎没有变化，而光谱椭偏(SE)分析表明，致密化从100°C开始。这种矛盾可以用透射电子显微镜(TEM)来解释。虽然传统的高分辨率透射电镜(hrtem)无法检测到高密度a- igzo薄膜中的微观结构，但高角度环形暗场扫描透射电镜(HAADF-STEM)可以检测到纳米级的低密度区域。低密度薄膜具有更大、更多的空隙。这些空洞结构在非常薄的区域(距离衬底表面5-10 nm)没有发现，但在较厚的区域增加。
{"title":"Why high-pressure sputtering must be avoided to deposit a-In-Ga-Zn-O films","authors":"K. Ide, Mitsuho Kikuchi, M. Sasase, H. Hiramatsu, H. Kumomi, H. Hosono, T. Kamiya","doi":"10.1109/AM-FPD.2016.7543696","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543696","url":null,"abstract":"Film density of amorphous In-Ga-Zn-O (a-IGZO) was varied in a wide range to investigate the origin of the low film density and its effect on thin-film transistor (TFT) characteristics. Device-quality a-IGZO films have the densities ~ 6.1 g/cm3, which is ~5% smaller than that of single-crystal InGaZnO4 (c-IGZO) (6.4 g/cm3). On the other hand, extremely low density of 5.5 g/cm3 was obtained when the sputtering working pressure (PTot) was increased to 5 Pa. High density desorption of H2O and O2 was detected in the low-density films, which are attributed to an origin of the low density. Although the low-density channel produced poor TFTs, good TFT characteristics were obtained by annealing at Tann = 300°C. The densities of the low-density films obtained by X-ray reflectivity (XRR) analysis were, however, almost unchanged up to Tann = 500°C, while spectroscopic ellipsometry (SE) analysis showed that densification started from 100°C. This contradiction is explained by transmission electron microscopy (TEM). Although conventional high-resolution TEM (HR-TEM) observation could not detect a microstructure in the high-density a-IGZO films, high-angle annular dark field scanning TEM (HAADF-STEM) detected nano-scale low-density regions. The low-density films had larger and more voids. These void structures were not found in very thin regions (5-10 nm from the substrate surface) but increased in thicker regions.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"8 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129024136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543637
Ya‐Ze Li, Chun-Jen Shih, E. Chen, Bo-Chi Huang, C. Lee, Jhih-Yan Guo, Shun‐Wei Liu
In this work, an efficient organic upconversion device (OUD) employing the bilayer charge generation layer (CGL) of chloroaluminum phthalocyanine (ClAlPc) and C70 was demonstrated. As a result, the current gain ratio of OUD with the sublimated ClAlPc was improved from 1 000 to 40 000 as compared the non-sublimated ones. This is because the mechanism of impurity-induced at the interface of CGL/ITO was mainly dominated the total amount of dark current density in our proposed OUD. Thus, the CGL with poor blocking efficiency might result in an increase in the hole carriers into the device.
{"title":"High current gain organic upconversion device using sublimated chloroaluminum phthalocyanine as a charge generation layer","authors":"Ya‐Ze Li, Chun-Jen Shih, E. Chen, Bo-Chi Huang, C. Lee, Jhih-Yan Guo, Shun‐Wei Liu","doi":"10.1109/AM-FPD.2016.7543637","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543637","url":null,"abstract":"In this work, an efficient organic upconversion device (OUD) employing the bilayer charge generation layer (CGL) of chloroaluminum phthalocyanine (ClAlPc) and C70 was demonstrated. As a result, the current gain ratio of OUD with the sublimated ClAlPc was improved from 1 000 to 40 000 as compared the non-sublimated ones. This is because the mechanism of impurity-induced at the interface of CGL/ITO was mainly dominated the total amount of dark current density in our proposed OUD. Thus, the CGL with poor blocking efficiency might result in an increase in the hole carriers into the device.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123034482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543619
Yuan-Ju Yang, Wei-Chieh Lin, Yi‐Jiun Chen, Kuo-Chung Huang, H. Lin
To have better sense of immersion and image quality for multi-viewers, the effects of curvature radius (R), barrier aperture ratio (aB) and sub-pixel aperture ratio (aD) are studied for large-sized curved auto-stereoscopic 3D (AS3D) displays in this paper. To fulfill the criteria of crosstalk <; 5% and uniformity > 60%, the curved AS3D display is designed to be with 7 viewing zones, R=4000 mm, aB=0.5 and aD=0.1.
为了给多观众提供更好的沉浸感和图像质量，本文研究了曲率半径(R)、屏障孔径比(aB)和亚像素孔径比(aD)对大尺寸曲面自动立体3D (AS3D)显示器的影响。为了满足串扰60%的标准，弧形AS3D显示器设计为7个观看区，R=4000 mm, aB=0.5, aD=0.1。
{"title":"Optimal parameters for parallax multi-viewer curved autostereoscopic display","authors":"Yuan-Ju Yang, Wei-Chieh Lin, Yi‐Jiun Chen, Kuo-Chung Huang, H. Lin","doi":"10.1109/AM-FPD.2016.7543619","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543619","url":null,"abstract":"To have better sense of immersion and image quality for multi-viewers, the effects of curvature radius (R), barrier aperture ratio (aB) and sub-pixel aperture ratio (aD) are studied for large-sized curved auto-stereoscopic 3D (AS3D) displays in this paper. To fulfill the criteria of crosstalk <; 5% and uniformity > 60%, the curved AS3D display is designed to be with 7 viewing zones, R=4000 mm, aB=0.5 and aD=0.1.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130906137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543612
Allen L. Ng, YuHuang Wang
Atomically-thin materials such as single-walled carbon nanotubes and graphene are prone to chemical attack because all of the constituent atoms are exposed. Here we describe progress from our lab in the synthetic creation of a tube-in-a-tube (Tube^2) semiconductor and their first applications in the electrical detection of small molecules and implications on biological sensing. A Tube^2 is equivalent to a pristine single-walled carbon nanotube (SWCNT) nested within a chemically tailored, impermeable, and atomically-thick functional shell. Compared with SWCNTs and graphene, electrical sensors created using Tube^2 can be readily tailored with robust covalent chemistries to enable chemical selectivity while maintaining exceptional SWCNT-like sensitivity.
{"title":"A tube-in-a-tube semiconductor","authors":"Allen L. Ng, YuHuang Wang","doi":"10.1109/AM-FPD.2016.7543612","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543612","url":null,"abstract":"Atomically-thin materials such as single-walled carbon nanotubes and graphene are prone to chemical attack because all of the constituent atoms are exposed. Here we describe progress from our lab in the synthetic creation of a tube-in-a-tube (Tube^2) semiconductor and their first applications in the electrical detection of small molecules and implications on biological sensing. A Tube^2 is equivalent to a pristine single-walled carbon nanotube (SWCNT) nested within a chemically tailored, impermeable, and atomically-thick functional shell. Compared with SWCNTs and graphene, electrical sensors created using Tube^2 can be readily tailored with robust covalent chemistries to enable chemical selectivity while maintaining exceptional SWCNT-like sensitivity.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128477203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543671
S. Uchiyama, Y. Ishikawa, Y. Kawamura, Y. Uraoka
This paper describes device modeling of FeS2 thin-film solar cells by device simulation to investigate the cause of 0% conversion efficiency from the reported device structure. We demonstrated that the reported device didn't form a suitable structure as a photovoltaic device. In order to achieve FeS2 photovoltaic device, we suggested that obtaining not only suitable band structure but also suitable band gap of FeS2 was necessary.
{"title":"Numerical modeling of device structure for FeS2 thin film solar cells","authors":"S. Uchiyama, Y. Ishikawa, Y. Kawamura, Y. Uraoka","doi":"10.1109/AM-FPD.2016.7543671","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543671","url":null,"abstract":"This paper describes device modeling of FeS2 thin-film solar cells by device simulation to investigate the cause of 0% conversion efficiency from the reported device structure. We demonstrated that the reported device didn't form a suitable structure as a photovoltaic device. In order to achieve FeS2 photovoltaic device, we suggested that obtaining not only suitable band structure but also suitable band gap of FeS2 was necessary.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126796411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543638
Keito Ohyama, T. Nonaka, Shin-ichi Yamamoto
LaF3, metal-oxide system for use as the base material, containing Er3+ and Yb3+ for host crystal of rare-earth (RE) elements were prepared by solid state reaction method and its upconversion (UC) luminescence excited by 980 nm laser was studied. The effects of firing temperature, LaF3 with Er3+, Yb3+ concentrations on the UC emission behavior were examined. The LaOF product sintered at ffOO °C contained LaF3 phases and exhibited strong green and red emissions arising due to the 2H11/2, 4S3/2→4Ii5/2 and 4F9/2→4Ii5/2 transitions for Er3+ ion, respectively. Bright yellow color by the mixing of green and red colors was observed in the LaOF product doped with 0.01 at.% Er3+ and 0.01 at.% Yb3+. It suggests that LaOF : Er3+, Yb3+ is a potential material for the yellow upconversion phosphor.
{"title":"Bright yellow up-conversion in a LaOF containing Er3+ and Yb3+","authors":"Keito Ohyama, T. Nonaka, Shin-ichi Yamamoto","doi":"10.1109/AM-FPD.2016.7543638","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543638","url":null,"abstract":"LaF<sub>3</sub>, metal-oxide system for use as the base material, containing Er<sup>3+</sup> and Yb<sup>3+</sup> for host crystal of rare-earth (RE) elements were prepared by solid state reaction method and its upconversion (UC) luminescence excited by 980 nm laser was studied. The effects of firing temperature, LaF3 with Er<sup>3+</sup>, Yb<sup>3+</sup> concentrations on the UC emission behavior were examined. The LaOF product sintered at ffOO °C contained LaF<sub>3</sub> phases and exhibited strong green and red emissions arising due to the <sup>2</sup>H<sub>11/2</sub>, <sup>4</sup>S<sub>3/2</sub>→<sup>4</sup>Ii<sub>5/2</sub> and <sup>4</sup>F<sub>9/2</sub>→<sup>4</sup>Ii<sub>5/2</sub> transitions for Er<sup>3</sup>+ ion, respectively. Bright yellow color by the mixing of green and red colors was observed in the LaOF product doped with 0.01 at.% Er<sup>3+</sup> and 0.01 at.% Yb<sup>3+</sup>. It suggests that LaOF : Er<sup>3+</sup>, Yb<sup>3+</sup> is a potential material for the yellow upconversion phosphor.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"2014 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128147314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543678
Mei-Ying Chang, Chun-Chiao Lin, Chih-Kuo Huang
In this paper, we used sol-gel derived ZnO solution of different molar ratio of ethanolamine with low temperature process deposited on ITO substrate as the electron transport layer (ETL) in inverted polymer solar cells (IPSCs). We found through a detailed analysis of less ethanolamine and low-temperature process ZnO thin film, which gives both high transparency and comparative literature has a simple process and control the film surface morphology, and low-temperature process of flexible, this increases the short-circuit density from 7.01 to 8.20mA/cm2 at an annealing temperature of 150°C for 10min. The flexible IPSCs exhibit a PCE of 2.48 to 3.17% for poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester (P3HT:PC61BM) blend film as the active layer under simulated AM1.5G illumination of 100mW/cm2.
{"title":"Sol-gel process ZnO thin film as the electron transport layer in inverted polymer solar cell","authors":"Mei-Ying Chang, Chun-Chiao Lin, Chih-Kuo Huang","doi":"10.1109/AM-FPD.2016.7543678","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543678","url":null,"abstract":"In this paper, we used sol-gel derived ZnO solution of different molar ratio of ethanolamine with low temperature process deposited on ITO substrate as the electron transport layer (ETL) in inverted polymer solar cells (IPSCs). We found through a detailed analysis of less ethanolamine and low-temperature process ZnO thin film, which gives both high transparency and comparative literature has a simple process and control the film surface morphology, and low-temperature process of flexible, this increases the short-circuit density from 7.01 to 8.20mA/cm2 at an annealing temperature of 150°C for 10min. The flexible IPSCs exhibit a PCE of 2.48 to 3.17% for poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester (P3HT:PC61BM) blend film as the active layer under simulated AM1.5G illumination of 100mW/cm2.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116897967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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