Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543666
Chun-Hui Chen, Chia‐Ming Yang, Liann-Be Chang, Chao‐Sung Lai
The thickness effect of In-Ga-Zn oxide (IGZO) semiconductor layer is investigated for pH sensing in light-addressable potentiometric sensor (LAPS). pH sensing membrane is 45 nm-thick NbOx, which is directly on IGZO/ITO/glass substrate. The thickness of IGZO layer is determined by time-mode control in reactive rf sputtering. The highest photovoltage and operation frequency can be obtained in the IGZO thickness of 300 nm. pH sensitivity is about 65 mV/pH with ac signal frequency at 1 kHz. For better stability in hysteresis, further investigations on sensing membrane optimization are suggested.
研究了in - ga - zn氧化物(IGZO)半导体层的厚度效应，用于光寻址电位传感器(LAPS)的pH传感。pH传感膜为45 nm厚的NbOx，直接安装在IGZO/ITO/玻璃基板上。反应式射频溅射中，IGZO层厚度由时模控制决定。在IGZO厚度为300 nm时，可获得最高的光电压和工作频率。当交流信号频率为1khz时，pH灵敏度约为65mv /pH。为了获得更好的滞回稳定性，建议进一步研究传感膜的优化。
{"title":"Thickness effect of IGZO layer in light-addressable potentiometric sensor","authors":"Chun-Hui Chen, Chia‐Ming Yang, Liann-Be Chang, Chao‐Sung Lai","doi":"10.1109/AM-FPD.2016.7543666","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543666","url":null,"abstract":"The thickness effect of In-Ga-Zn oxide (IGZO) semiconductor layer is investigated for pH sensing in light-addressable potentiometric sensor (LAPS). pH sensing membrane is 45 nm-thick NbOx, which is directly on IGZO/ITO/glass substrate. The thickness of IGZO layer is determined by time-mode control in reactive rf sputtering. The highest photovoltage and operation frequency can be obtained in the IGZO thickness of 300 nm. pH sensitivity is about 65 mV/pH with ac signal frequency at 1 kHz. For better stability in hysteresis, further investigations on sensing membrane optimization are suggested.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130358975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543676
Chi-feng Lin, Ching-Lun Chen, Pin-Hung Chen, Hsieh-Cheng Han, K. Chiu, Y. Su
In this study, we replace the traditional platinum counter electrode (CE) by composite poly(3,4-thylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) and carbon black (CB) in the dye sensitized solar cell. The pure PEDOT:PSS CEs show the good redox potential and conductivity with appropriate open-circuit voltage (Voc) and short-circuit current density (Jsc), but the low redox ability results in bad fill factor (FF) of devices. After mixing PEDOT:PSS with CB, the redox activity is improved thus enhance the FF from 42.21% to 66.61% and efficiency from 5.31% to 6.99%. Meantime, the performance of PEDOT:PSS can also be improved through sulfidation treatment. The optimums device shows the efficiency of 8.75% with the Jsc of 17.67 mA/cm2, Voc of 0.75 V and FF of66.03%.
{"title":"Dye sensitized solar cells with carbon mixed conducting polymer counter electrodes","authors":"Chi-feng Lin, Ching-Lun Chen, Pin-Hung Chen, Hsieh-Cheng Han, K. Chiu, Y. Su","doi":"10.1109/AM-FPD.2016.7543676","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543676","url":null,"abstract":"In this study, we replace the traditional platinum counter electrode (CE) by composite poly(3,4-thylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) and carbon black (CB) in the dye sensitized solar cell. The pure PEDOT:PSS CEs show the good redox potential and conductivity with appropriate open-circuit voltage (Voc) and short-circuit current density (Jsc), but the low redox ability results in bad fill factor (FF) of devices. After mixing PEDOT:PSS with CB, the redox activity is improved thus enhance the FF from 42.21% to 66.61% and efficiency from 5.31% to 6.99%. Meantime, the performance of PEDOT:PSS can also be improved through sulfidation treatment. The optimums device shows the efficiency of 8.75% with the Jsc of 17.67 mA/cm2, Voc of 0.75 V and FF of66.03%.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131897117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543656
Yuki Koga, T. Matsuda, M. Kimura
Neural networks are computing models based on human brains. We propose a neural network using a field-programmable gate array (FPGA) for neurons and amorphous In-Ga-Zn-O (a-IGZO) thin films for synapses. It is found that electric current in the a-IGZO thin film gradually decreases along the time. On the other hand, the degradation does not occur when light is irradiated. These phenomena can be utilized for the synapses in the neural network. It is confirmed that after the learning, the neural network replies the correct answer of AND logic. These results indicate that the neural networks using a-IGZO thin films have a great potential to realize future neural networks.
{"title":"Neural network using FPGA for neurons and IGZO thin films for synapses","authors":"Yuki Koga, T. Matsuda, M. Kimura","doi":"10.1109/AM-FPD.2016.7543656","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543656","url":null,"abstract":"Neural networks are computing models based on human brains. We propose a neural network using a field-programmable gate array (FPGA) for neurons and amorphous In-Ga-Zn-O (a-IGZO) thin films for synapses. It is found that electric current in the a-IGZO thin film gradually decreases along the time. On the other hand, the degradation does not occur when light is irradiated. These phenomena can be utilized for the synapses in the neural network. It is confirmed that after the learning, the neural network replies the correct answer of AND logic. These results indicate that the neural networks using a-IGZO thin films have a great potential to realize future neural networks.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116692358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543601
K. Takei
Macroscale and multi-functional flexible sensor networks have been widely proposed for the Internet of Things (IoT) and the trillion sensor networks. In this report, our recent progress of flexible sensors fabricated by some printing methods on user-defined non-planer substrates is presented. Especially, flexible strain sensor and temperature sensors are discussed to monitor human condition as a health monitoring device and to detect an object for a robotic prosthesis skin. In addition, flexible digital and analog circuits for the future fully integrated flexible device system are introduced.
{"title":"Nanomaterial-based flexible and wearable sensor sheets","authors":"K. Takei","doi":"10.1109/AM-FPD.2016.7543601","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543601","url":null,"abstract":"Macroscale and multi-functional flexible sensor networks have been widely proposed for the Internet of Things (IoT) and the trillion sensor networks. In this report, our recent progress of flexible sensors fabricated by some printing methods on user-defined non-planer substrates is presented. Especially, flexible strain sensor and temperature sensors are discussed to monitor human condition as a health monitoring device and to detect an object for a robotic prosthesis skin. In addition, flexible digital and analog circuits for the future fully integrated flexible device system are introduced.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127148458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543658
J. Ahn, Kwang-Heum Lee, J. Do, W. Park, S. Park
Top gate top contact (TGTC) structured thin film transistors with In-Sn-Zn-O active layer deposited by high density plasma sputtering (HDP) have been successfully fabricated. The HDP ITZO TFT achieved saturation mobility of 27.8cm2/Vs, threshold voltage (Vth) of -0.28V The bias-temperature stress with VgS = 20 V and Vds = 0.1 V at 60°C for 2 hours yields the negligible Von shift of 0 V for the HDP ITZO TFT, while that fabricated by means of DC sputtering showed 3.1V shift.
{"title":"Highly stable top gate top contact ITZO TFT deposited by using high density plasma sputtering","authors":"J. Ahn, Kwang-Heum Lee, J. Do, W. Park, S. Park","doi":"10.1109/AM-FPD.2016.7543658","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543658","url":null,"abstract":"Top gate top contact (TGTC) structured thin film transistors with In-Sn-Zn-O active layer deposited by high density plasma sputtering (HDP) have been successfully fabricated. The HDP ITZO TFT achieved saturation mobility of 27.8cm2/Vs, threshold voltage (Vth) of -0.28V The bias-temperature stress with VgS = 20 V and Vds = 0.1 V at 60°C for 2 hours yields the negligible Von shift of 0 V for the HDP ITZO TFT, while that fabricated by means of DC sputtering showed 3.1V shift.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127178491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543599
T. Kurita
Television broadcasting has evolved with Olympics. The Olympic Games in 2020 Tokyo will be broadcast with very high sensation of reality through 8K or Super Hi-Vision system. The 8K system provides many excellent effects on our sensation such as high sensation of reality, visual realness and depth sensation. Several 8K FPDs have already been developed. However their display performance, such as color gamut, bit depth, dynamic range and moving image quality, should be improved. Progress of 8K FPDs is strongly desired toward 2020.
{"title":"AM-FPDs will make further progress with 8K system and olympic games","authors":"T. Kurita","doi":"10.1109/AM-FPD.2016.7543599","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543599","url":null,"abstract":"Television broadcasting has evolved with Olympics. The Olympic Games in 2020 Tokyo will be broadcast with very high sensation of reality through 8K or Super Hi-Vision system. The 8K system provides many excellent effects on our sensation such as high sensation of reality, visual realness and depth sensation. Several 8K FPDs have already been developed. However their display performance, such as color gamut, bit depth, dynamic range and moving image quality, should be improved. Progress of 8K FPDs is strongly desired toward 2020.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121951508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543660
M. Hasan, M. Billah, Jin Jang
We report the effect of tensile strain on the electrical performance of flexible a-In-Ga-Z-O (a-IGZO) thin-film transistor (TFT). Positive bias stress (PBS) measurement with Vgs = 20 V and Vds = 0 V in a-IGZO TFTs show positive transfer shift due to the trapping of negative charges, likely electron trapping. We observed that tensile strained TFT with 2 mm bending radius exhibits a positive ΔVTh (V) ~2.3 V shift compared to flat condition TFT (ΔVth (V) ~1.5 V) after 3.6K seconds stress. It clearly revels that more charges are trapped at the gate insulator/a-IGZO interface when the Fermi level is shifted downward by PBS with strained geometry.
{"title":"Electrical stability of flexible a-IGZO TFT under strained condition","authors":"M. Hasan, M. Billah, Jin Jang","doi":"10.1109/AM-FPD.2016.7543660","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543660","url":null,"abstract":"We report the effect of tensile strain on the electrical performance of flexible a-In-Ga-Z-O (a-IGZO) thin-film transistor (TFT). Positive bias stress (PBS) measurement with Vgs = 20 V and Vds = 0 V in a-IGZO TFTs show positive transfer shift due to the trapping of negative charges, likely electron trapping. We observed that tensile strained TFT with 2 mm bending radius exhibits a positive ΔVTh (V) ~2.3 V shift compared to flat condition TFT (ΔVth (V) ~1.5 V) after 3.6K seconds stress. It clearly revels that more charges are trapped at the gate insulator/a-IGZO interface when the Fermi level is shifted downward by PBS with strained geometry.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121494329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543691
T. Miyadera, T. Sugita, H. Tampo, K. Matsubara, M. Chikamatsu
A laser deposition system for the co-evaporation of organolead halide perovskite was developed. We successfully demonstrated that the difficulty in deposition control of CH3NH3I (MAI) was overcome by laser deposition, where the evaporation rate was finely adjusted by tuning the duty ratio of squarely modulated infrared laser. Deposition rate was stabilized for several-hour co-deposition period. The laser deposition method enabled the stoichiometric control of MAI and PbI2 with sufficient reproducibility. Planar type perovskite solar cells were constructed with the use of p-type and n-type organic semiconductor as buffer layers and the efficiency of 16.0 % with reduced hysteresis was achieved.
{"title":"Laser deposition for the controlled co-deposition of organolead halide perovskite","authors":"T. Miyadera, T. Sugita, H. Tampo, K. Matsubara, M. Chikamatsu","doi":"10.1109/AM-FPD.2016.7543691","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543691","url":null,"abstract":"A laser deposition system for the co-evaporation of organolead halide perovskite was developed. We successfully demonstrated that the difficulty in deposition control of CH3NH3I (MAI) was overcome by laser deposition, where the evaporation rate was finely adjusted by tuning the duty ratio of squarely modulated infrared laser. Deposition rate was stabilized for several-hour co-deposition period. The laser deposition method enabled the stoichiometric control of MAI and PbI2 with sufficient reproducibility. Planar type perovskite solar cells were constructed with the use of p-type and n-type organic semiconductor as buffer layers and the efficiency of 16.0 % with reduced hysteresis was achieved.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129509243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543632
Mi-young Ha, Do-Yeol Yoon, Da-Young Park, Seung-Jung Choi, D. Moon
We developed flexible green phosphorescent organic light-emitting devices (OLEDs) on copy paper substrates. Poly-2-chloro-p-xylylene and poly-4-vinylphenol were used as buffer layer for reducing the surface roughness and protecting the absorption of water and organic solvents during photolithography process. Sputtered Al/Ni and evaporated Ca/Ag were used as anode and semitransparent cathode, respectively. The flexible OLED on the copy paper substrate exhibited a maximum luminance of4205 cd/m2 and a maximum current efficiency of 7.58 cd/A.
{"title":"Flexible green phosphorescent organic light-emitting devices on copy paper substrates","authors":"Mi-young Ha, Do-Yeol Yoon, Da-Young Park, Seung-Jung Choi, D. Moon","doi":"10.1109/AM-FPD.2016.7543632","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543632","url":null,"abstract":"We developed flexible green phosphorescent organic light-emitting devices (OLEDs) on copy paper substrates. Poly-2-chloro-p-xylylene and poly-4-vinylphenol were used as buffer layer for reducing the surface roughness and protecting the absorption of water and organic solvents during photolithography process. Sputtered Al/Ni and evaporated Ca/Ag were used as anode and semitransparent cathode, respectively. The flexible OLED on the copy paper substrate exhibited a maximum luminance of4205 cd/m2 and a maximum current efficiency of 7.58 cd/A.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"139 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133653105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Vapor-based deposition technique is considered as a promising approach for preparing a high-quality and uniform perovskite thin film. With evolution from coevaporation deposition to a low-pressure vapor-assisted solution process, both energy budget and reaction yield for perovskite film fabrications are improved. In this work, a low-pressure hybrid chemical vapor deposition (LPHCVD) method is applied to fabricate CH3NH3PbI3 perovskite films. The crucial dependence of working pressure on the perovskite formation is revealed. Moreover, the reaction time plays an important role in controlling the quality of the synthesized perovskite film. Efficient mesoscopic perovskite solar cells of 14.99% and perovskite modules (active area of 8.4 cm2) of 6.22% are achieved by this LPHCVD method.
{"title":"Low-pressure hybrid chemical vapor deposition for efficient perovskite solar cells and module","authors":"Ming-Hsien Li, Po-Shen Shen, Jia-Shin Chen, Yu-Hsien Chiang, Peter Chen, Tzung‐Fang Guo","doi":"10.1109/AM-FPD.2016.7543684","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543684","url":null,"abstract":"Vapor-based deposition technique is considered as a promising approach for preparing a high-quality and uniform perovskite thin film. With evolution from coevaporation deposition to a low-pressure vapor-assisted solution process, both energy budget and reaction yield for perovskite film fabrications are improved. In this work, a low-pressure hybrid chemical vapor deposition (LPHCVD) method is applied to fabricate CH3NH3PbI3 perovskite films. The crucial dependence of working pressure on the perovskite formation is revealed. Moreover, the reaction time plays an important role in controlling the quality of the synthesized perovskite film. Efficient mesoscopic perovskite solar cells of 14.99% and perovskite modules (active area of 8.4 cm2) of 6.22% are achieved by this LPHCVD method.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133204544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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