Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543631
Yi-Hsin Lan, Y. Bai, Nai-Jing Chen, Jau-Jiun Huang, B. Lin, C. Hsiao, M. Leung, M. Wei, Chi-feng Lin, Tien‐Lung Chiu, Jiu-Haw Lee
We demonstrated a blue phosphorescent organic light-emitting diode with the maximum current efficiency and power efficiency of 57.4 cd/A and 51.6 lm/W, respectively, based on trizaole derivatives as the host of the emitting layer.
{"title":"Blue phosphorescent organic light-emitting diode with triazole host achieving high current efficiency","authors":"Yi-Hsin Lan, Y. Bai, Nai-Jing Chen, Jau-Jiun Huang, B. Lin, C. Hsiao, M. Leung, M. Wei, Chi-feng Lin, Tien‐Lung Chiu, Jiu-Haw Lee","doi":"10.1109/AM-FPD.2016.7543631","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543631","url":null,"abstract":"We demonstrated a blue phosphorescent organic light-emitting diode with the maximum current efficiency and power efficiency of 57.4 cd/A and 51.6 lm/W, respectively, based on trizaole derivatives as the host of the emitting layer.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131035502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543659
A. Hara, Tatsuya Meguro
We discussed the performance of continuous-wave laser lateral crystallization (CLC) low-temperature (LT) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) fabricated at 550 °C with a sputtered metal gate and sputtered HfO2 gate dielectric on a nonalkaline glass substrate. The obtained field-effect mobility of CLC LT poly-Si TFTs with a HfO2 gate stack was 180 cm2/V s. However, the mobility of the HfO2 gate stack is lower than that of the PECVD-SiO2 gate stack. It was concluded that this is caused by scattering at defects and imperfections of both the inter layer (IL) SiO2 and the IL-SiO2/Si interface, but not by remote scattering from the high-k dielectric.
{"title":"Low-temperature poly-Si TFTs with sputtered HfO2 gate stack on glass substrate","authors":"A. Hara, Tatsuya Meguro","doi":"10.1109/AM-FPD.2016.7543659","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543659","url":null,"abstract":"We discussed the performance of continuous-wave laser lateral crystallization (CLC) low-temperature (LT) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) fabricated at 550 °C with a sputtered metal gate and sputtered HfO<sub>2</sub> gate dielectric on a nonalkaline glass substrate. The obtained field-effect mobility of CLC LT poly-Si TFTs with a HfO<sub>2</sub> gate stack was 180 cm<sup>2</sup>/V s. However, the mobility of the HfO<sub>2</sub> gate stack is lower than that of the PECVD-SiO<sub>2</sub> gate stack. It was concluded that this is caused by scattering at defects and imperfections of both the inter layer (IL) SiO<sub>2</sub> and the IL-SiO<sub>2</sub>/Si interface, but not by remote scattering from the high-k dielectric.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133045223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543614
A. Heya, N. Matsuo
Effect of atomic hydrogen annealing (AHA) on graphene oxide (GO) was investigated. In AHA, the high-density atomic hydrogen is generated on heated tungsten (W) surface by catalytic cracking reaction. From X-ray photoelectron spectra, GO films were reduced by AHA. The sheet resistance of the GO film was decreased by 5 orders of magnitude at W mesh temperature of 1780 °C, sample temperature of 220 °C and treatment time of 1800 s. The reduction of GO films relates chemical reaction due to atomic hydrogen because the GO films was not reduced by He treatment. The C-O-C bonds in GO films were preferentially reduced by AHA.
{"title":"Reduction of graphene oxide by atomic hydrogen annealing","authors":"A. Heya, N. Matsuo","doi":"10.1109/AM-FPD.2016.7543614","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543614","url":null,"abstract":"Effect of atomic hydrogen annealing (AHA) on graphene oxide (GO) was investigated. In AHA, the high-density atomic hydrogen is generated on heated tungsten (W) surface by catalytic cracking reaction. From X-ray photoelectron spectra, GO films were reduced by AHA. The sheet resistance of the GO film was decreased by 5 orders of magnitude at W mesh temperature of 1780 °C, sample temperature of 220 °C and treatment time of 1800 s. The reduction of GO films relates chemical reaction due to atomic hydrogen because the GO films was not reduced by He treatment. The C-O-C bonds in GO films were preferentially reduced by AHA.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114706660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543615
A. Mohite, W. Nie, J. Blancon, H. Tsai, Gautam Gupta
Organic-Inorganic or (Hybrid) perovskites are a special class of perovskites with a general chemical formula of AMX3 formed by using low-temperature synthesis approaches. They exhibit exceptional fundamental properties that have been translated into proof-of-principle demonstrations of photovoltaics (1), light emitting diodes(2), photodetectors(3), thermoelectric devices, lasers(4), photo-catalysts(5) and gamma ray detectors(6, 7) among which energy harvesting in photovoltaics has been the most studied(1, 8-15). While tremendous progress is being made, a fundamental bottleneck in that has existed in field is the high degree of variability in crystalline quality, grain-size, and microstructure of hybrid perovskites reported by the community. This has resulted in multiple interpretations of experimental data and thus key fundamental mechanisms remain largely unresolved. An ideal solution to this issue of non reliable properties is the ability to reproducibly grow hybrid perovskite thin-films with high degree of crystallinity, which allow access to the intrinsic physical properties, which are otherwise masked by non-reliable processing dependent microstructure. Here we present our recently developed fast thin-film crystal growth technique termed as hot-casting, which allows us to grow high crystalline quality, uniform, pinhole free films of hybrid perovskites with hundreds of microns to mm-scale grain-size. Investigation of photo-physical properties reveals that the resulting large grains behave as classical III-V direct band-gap semiconductors. However, as the grain-size decreases, the properties can no longer be described using models described for direct gap semiconductors. When incorporated into a simple "inverted" photovoltaic bilayer architecture with ITO/PEDOT:PSS/Perovskite/PCBM/Al, with no minimal optimization a hysteresis free device with a current-voltage curve of 15.37%. Electrical characterization using capacitance-voltage measurements and light-intensity dependence of the open circuit voltage suggest that perovskite films are intrinsic and the photogenerated charge carrier recombine through a bimolecular process, only observed in high quality semiconducting materials.
{"title":"Optoelectronic properties and photo-physics of large grain hybrid perovskites","authors":"A. Mohite, W. Nie, J. Blancon, H. Tsai, Gautam Gupta","doi":"10.1109/AM-FPD.2016.7543615","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543615","url":null,"abstract":"Organic-Inorganic or (Hybrid) perovskites are a special class of perovskites with a general chemical formula of AMX3 formed by using low-temperature synthesis approaches. They exhibit exceptional fundamental properties that have been translated into proof-of-principle demonstrations of photovoltaics (1), light emitting diodes(2), photodetectors(3), thermoelectric devices, lasers(4), photo-catalysts(5) and gamma ray detectors(6, 7) among which energy harvesting in photovoltaics has been the most studied(1, 8-15). While tremendous progress is being made, a fundamental bottleneck in that has existed in field is the high degree of variability in crystalline quality, grain-size, and microstructure of hybrid perovskites reported by the community. This has resulted in multiple interpretations of experimental data and thus key fundamental mechanisms remain largely unresolved. An ideal solution to this issue of non reliable properties is the ability to reproducibly grow hybrid perovskite thin-films with high degree of crystallinity, which allow access to the intrinsic physical properties, which are otherwise masked by non-reliable processing dependent microstructure. Here we present our recently developed fast thin-film crystal growth technique termed as hot-casting, which allows us to grow high crystalline quality, uniform, pinhole free films of hybrid perovskites with hundreds of microns to mm-scale grain-size. Investigation of photo-physical properties reveals that the resulting large grains behave as classical III-V direct band-gap semiconductors. However, as the grain-size decreases, the properties can no longer be described using models described for direct gap semiconductors. When incorporated into a simple \"inverted\" photovoltaic bilayer architecture with ITO/PEDOT:PSS/Perovskite/PCBM/Al, with no minimal optimization a hysteresis free device with a current-voltage curve of 15.37%. Electrical characterization using capacitance-voltage measurements and light-intensity dependence of the open circuit voltage suggest that perovskite films are intrinsic and the photogenerated charge carrier recombine through a bimolecular process, only observed in high quality semiconducting materials.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124711920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543650
S. Shaari, S. Naka, H. Okada
We have fabricated pentacene and C6-DNT-V-based organic thin film transistors (OTFTs) with various types of interfacial layer. Eight different kinds of OTFTs were fabricated without and with interfacial layers (CT4112, PMMA, Cytop, OTS, HMDS, Ta2O5 and Si3N4). The surface properties of contact angle and electrical properties of OTFTs include charge carrier mobility, threshold voltage, and on/off current ratio were measured to compare and analyse the relationship between them. Some of the device properties show strong correlations, especially the relationship between contact angle and threshold voltage shows the strong correlation coefficient compare with others relationship. Correlation coefficient (R) between contact angle and threshold voltage was 0.83 for the pentacene and 0.88 for the C6-DNT-V-based OTFTs.
{"title":"Correlation between contact angle and electrical properties in pentacene and C6-DNT-V-based organic thin film transistors","authors":"S. Shaari, S. Naka, H. Okada","doi":"10.1109/AM-FPD.2016.7543650","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543650","url":null,"abstract":"We have fabricated pentacene and C6-DNT-V-based organic thin film transistors (OTFTs) with various types of interfacial layer. Eight different kinds of OTFTs were fabricated without and with interfacial layers (CT4112, PMMA, Cytop, OTS, HMDS, Ta2O5 and Si3N4). The surface properties of contact angle and electrical properties of OTFTs include charge carrier mobility, threshold voltage, and on/off current ratio were measured to compare and analyse the relationship between them. Some of the device properties show strong correlations, especially the relationship between contact angle and threshold voltage shows the strong correlation coefficient compare with others relationship. Correlation coefficient (R) between contact angle and threshold voltage was 0.83 for the pentacene and 0.88 for the C6-DNT-V-based OTFTs.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116317843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zinc tin oxide (ZTO) thin film transistors (TFTs) with back-channel-etch (BCE) structure are demonstrated. The influence of oxygen partial pressure during ZTO layer sputtering is discussed and an optimal O2/Ar ratio of 1% is achieved. The effect of annealing temperature is studied and the device annealed at 300°C performs well. The wet etching of Mo source/drain electrodes is carried out in Mo etchant which shows little damage to ZTO layer. The BCE ZTO TFT exhibits a field effect mobility of 1.88 cm2V-1s-1, a subthreshold slope of 0.37V/decade, and an on-off current ratio larger than 107. The comparable performances between BCE ZTO TFT and lift-off ZTO TFT indicate back-channel-etch ZTO TFT is a feasible technique and suitable for mass production.
{"title":"Oxygen partial pressure and annealing temperature influence on the performance of back-channel-etch zinc tin oxide thin film transistors","authors":"Yuxiang Xiao, Xiang Xiao, Letao Zhang, Xin Ju, Hongjuan Lu, Shengdong Zhang","doi":"10.1109/AM-FPD.2016.7543643","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543643","url":null,"abstract":"Zinc tin oxide (ZTO) thin film transistors (TFTs) with back-channel-etch (BCE) structure are demonstrated. The influence of oxygen partial pressure during ZTO layer sputtering is discussed and an optimal O2/Ar ratio of 1% is achieved. The effect of annealing temperature is studied and the device annealed at 300°C performs well. The wet etching of Mo source/drain electrodes is carried out in Mo etchant which shows little damage to ZTO layer. The BCE ZTO TFT exhibits a field effect mobility of 1.88 cm2V-1s-1, a subthreshold slope of 0.37V/decade, and an on-off current ratio larger than 107. The comparable performances between BCE ZTO TFT and lift-off ZTO TFT indicate back-channel-etch ZTO TFT is a feasible technique and suitable for mass production.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115348702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543683
H. Kanda, A. Uzum, H. Nishino, S. Ito
In order to combine perovskite solar cell and crystal silicon solar cell, indium tin oxide as conductive layer is utilized in terms of high transparency. However, distortion of I-V curve was observed by spattering conductive layer on organic hole transport material layer (Spiro-OMeTAD). In order to analyze and find out the reason of the distortion of I-V curve, perovskite solar cell was fabricated with conductive layer deposited by spattering on the hole transport material changing spattering time. It was turned out that distortion of I-V curve was increased with increase of spattering time and different diode factor was observed by measuring dark I-V curve, which attribute to the distortion of I-V curve.
{"title":"Perovskite/p-type crystal silicon tandem solar cells","authors":"H. Kanda, A. Uzum, H. Nishino, S. Ito","doi":"10.1109/AM-FPD.2016.7543683","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543683","url":null,"abstract":"In order to combine perovskite solar cell and crystal silicon solar cell, indium tin oxide as conductive layer is utilized in terms of high transparency. However, distortion of I-V curve was observed by spattering conductive layer on organic hole transport material layer (Spiro-OMeTAD). In order to analyze and find out the reason of the distortion of I-V curve, perovskite solar cell was fabricated with conductive layer deposited by spattering on the hole transport material changing spattering time. It was turned out that distortion of I-V curve was increased with increase of spattering time and different diode factor was observed by measuring dark I-V curve, which attribute to the distortion of I-V curve.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121589063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543667
Pen-Cheng Wang, B. Wen, Tung-Yuan Lee, Pin-Hsuan Hung, H. Chen
This study presents an electrical characterization of multi-thin-film metal electrodes deposited on flexible substrates by using an automatic folding test system (AFTS). To quantize folding conditions, AFTS for folding function is utilized to control radii of curvature of the flexible substrates, folding times, and velocities. Additionally, AFTS measures the electrical characteristics of flexible substrates during folding test. As a result, the new technique successfully measures electrical characteristics of flexible polydimethylsiloxane (PDMS)/gold electrodes for analysis during the 0/cm to 0.5/cm curvature folding cycles. Inspection results of folding characteristics depicted on flexible displays help a designer or maker of flexible displays design useful and comfortable flexible electronic products.
{"title":"Investigation of electrical characteristics of multi-thin-film metal electrodes deposited on flexible polydimethylsiloxane substrates by using an automatic folding test system","authors":"Pen-Cheng Wang, B. Wen, Tung-Yuan Lee, Pin-Hsuan Hung, H. Chen","doi":"10.1109/AM-FPD.2016.7543667","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543667","url":null,"abstract":"This study presents an electrical characterization of multi-thin-film metal electrodes deposited on flexible substrates by using an automatic folding test system (AFTS). To quantize folding conditions, AFTS for folding function is utilized to control radii of curvature of the flexible substrates, folding times, and velocities. Additionally, AFTS measures the electrical characteristics of flexible substrates during folding test. As a result, the new technique successfully measures electrical characteristics of flexible polydimethylsiloxane (PDMS)/gold electrodes for analysis during the 0/cm to 0.5/cm curvature folding cycles. Inspection results of folding characteristics depicted on flexible displays help a designer or maker of flexible displays design useful and comfortable flexible electronic products.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126639345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543646
Hyun-Sik Choi, Jong-Heon Yang, J. Choi, Chi-Sun Hwang, S. Cho, S. Jeon
In oxide thin-film transistors (TFTs), light illumination effect is a big concern due to its operating condition. Light illumination can change many electrical properties in oxide TFTs such as mobility and threshold voltage (Vth). In many researches, Oxygen vacancy is suspected as a main cause of the changes by light illumination. Recently, the back channel formation by field-induced macroscopic barrier model is reported under light illumination. This is also related to Oxygen vacancy. In this letter, we investigate the gradual changes in DC and CV characteristics depending on the dual-channel thicknesses. For this purpose, we use the aluminum-doped indium zinc tin oxide (AIZTO)/indium zinc oxide (IZO) dual-channel TFTs. The main goal of this paper is to find the main cause of the changes by light illumination in various dual-channel thicknesses.
{"title":"Light illumination effect in AIZTO/IZO dual-channel TFTs","authors":"Hyun-Sik Choi, Jong-Heon Yang, J. Choi, Chi-Sun Hwang, S. Cho, S. Jeon","doi":"10.1109/AM-FPD.2016.7543646","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543646","url":null,"abstract":"In oxide thin-film transistors (TFTs), light illumination effect is a big concern due to its operating condition. Light illumination can change many electrical properties in oxide TFTs such as mobility and threshold voltage (Vth). In many researches, Oxygen vacancy is suspected as a main cause of the changes by light illumination. Recently, the back channel formation by field-induced macroscopic barrier model is reported under light illumination. This is also related to Oxygen vacancy. In this letter, we investigate the gradual changes in DC and CV characteristics depending on the dual-channel thicknesses. For this purpose, we use the aluminum-doped indium zinc tin oxide (AIZTO)/indium zinc oxide (IZO) dual-channel TFTs. The main goal of this paper is to find the main cause of the changes by light illumination in various dual-channel thicknesses.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134263509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543639
C. Wu, Yi-Shao Li, C. Chou, Huang-Chung Cheng
The continuous wave laser crystallization (CLC) has been considered as a suitable approach to achieve the high-quality Ge films. In order to further overcome the hole concentration of Ge thin films resulting from the acceptor-like defects, the counter-doping (CD) process with a suitable dose of n-type dopants was employed to convert the carrier type in Ge thin films. In this study, the high-performance low-temperature p-channel polycrystalline-germanium thin-film transistors (TFTs) have been demonstrated via continuous wave laser crystallization and counter doping to exhibit the low subthreshold swing of 432 mV/decade, a superior on/off current ratio of 4×103 and a high hole field-effect mobility of 290 cm2/V-s.
{"title":"High-performance low-temperature p-channel polycrystalline-germanium thin-film transistors via continuous wave laser crystallization","authors":"C. Wu, Yi-Shao Li, C. Chou, Huang-Chung Cheng","doi":"10.1109/AM-FPD.2016.7543639","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543639","url":null,"abstract":"The continuous wave laser crystallization (CLC) has been considered as a suitable approach to achieve the high-quality Ge films. In order to further overcome the hole concentration of Ge thin films resulting from the acceptor-like defects, the counter-doping (CD) process with a suitable dose of n-type dopants was employed to convert the carrier type in Ge thin films. In this study, the high-performance low-temperature p-channel polycrystalline-germanium thin-film transistors (TFTs) have been demonstrated via continuous wave laser crystallization and counter doping to exhibit the low subthreshold swing of 432 mV/decade, a superior on/off current ratio of 4×103 and a high hole field-effect mobility of 290 cm2/V-s.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129311317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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