Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626416
L. Lu, N. Jamond, J. Eymerv, E. Lefeuvre, L. Mancini, L. Larzeau, A. Madouri, O. Saket, N. Gogneau, F. Julien, M. Tchernycheva
In this work, we fabricate and characterize piezogenerators based on GaN nanowire (NW) arrays. We integrate GaN NWs grown by either Plasma Assisted Molecular Beam Epitaxy (PA-MBE) or Metal Organic Chemical Vapor Deposition (MOCVD) techniques into a polymeric matrix to explore piezogeneration of rigid and flexible devices. Both types of devices show high sensitivity to external forces and mechanical robustness. With an enhanced mechanic-electrical conversion efficiency, these devices are good candidates for energy harvesting and force sensing applications.
{"title":"Nanogenerators based on piezoelectric GaN nanowires grown by PA-MBE and MOCVD","authors":"L. Lu, N. Jamond, J. Eymerv, E. Lefeuvre, L. Mancini, L. Larzeau, A. Madouri, O. Saket, N. Gogneau, F. Julien, M. Tchernycheva","doi":"10.1109/NANO.2018.8626416","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626416","url":null,"abstract":"In this work, we fabricate and characterize piezogenerators based on GaN nanowire (NW) arrays. We integrate GaN NWs grown by either Plasma Assisted Molecular Beam Epitaxy (PA-MBE) or Metal Organic Chemical Vapor Deposition (MOCVD) techniques into a polymeric matrix to explore piezogeneration of rigid and flexible devices. Both types of devices show high sensitivity to external forces and mechanical robustness. With an enhanced mechanic-electrical conversion efficiency, these devices are good candidates for energy harvesting and force sensing applications.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123163752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626272
E. Ferrone, R. Araneo, M. Pea, A. Rinaldi, A. Notargiacomo, M. Migliorato
Due to its piezoelectric and semiconductive properties, ZnO is actively investigated for the development of innovative nanostructures for applications ranging from piezotronics to energy harvesting. In the present paper we develop a full model for the non-linear piezoelectricity in ZnO nanowires, where both direct and inverse non-linear piezoelectric effects are accounted for. The preliminary results show for the first time the importance of non-linear effects on the electro-mechanic behavior of nanowires especially when used for piezotronic applications.
{"title":"Towards a full model of non-linear piezolectricity in ZnO nanowires","authors":"E. Ferrone, R. Araneo, M. Pea, A. Rinaldi, A. Notargiacomo, M. Migliorato","doi":"10.1109/NANO.2018.8626272","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626272","url":null,"abstract":"Due to its piezoelectric and semiconductive properties, ZnO is actively investigated for the development of innovative nanostructures for applications ranging from piezotronics to energy harvesting. In the present paper we develop a full model for the non-linear piezoelectricity in ZnO nanowires, where both direct and inverse non-linear piezoelectric effects are accounted for. The preliminary results show for the first time the importance of non-linear effects on the electro-mechanic behavior of nanowires especially when used for piezotronic applications.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"241 8","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132442988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626266
C. Cummins, R. Lundy, G. Cunningham, A. Selkirk, M. Morris, R. Enright
The proliferation of advanced portable technology places substantial demands on current patterning techniques to satisfy future device and data needs. Therefore, research on integrating high-performing nanomaterials such as transition metal dichalcogenides (TMDs) with industry standard patterning methods is critical to achieving ultra-low-power devices. We describe methods based upon combining TMD materials with bottom-up block copolymer (BCP) templating processes. While there has been much focus on processing layered 2D materials, these methods can be extremely difficult to control. Moreover, little work exists on creating isolated nanofeatures of TMDs for device use in an etchless manner. We detail an effective route based on BCP nanopatterning to precisely position TMD features at semiconductor surfaces with sub-l0 nm resolution.
{"title":"Etchless transition metal dichalcogenide surface nanostructure definition using block copolymer templates","authors":"C. Cummins, R. Lundy, G. Cunningham, A. Selkirk, M. Morris, R. Enright","doi":"10.1109/NANO.2018.8626266","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626266","url":null,"abstract":"The proliferation of advanced portable technology places substantial demands on current patterning techniques to satisfy future device and data needs. Therefore, research on integrating high-performing nanomaterials such as transition metal dichalcogenides (TMDs) with industry standard patterning methods is critical to achieving ultra-low-power devices. We describe methods based upon combining TMD materials with bottom-up block copolymer (BCP) templating processes. While there has been much focus on processing layered 2D materials, these methods can be extremely difficult to control. Moreover, little work exists on creating isolated nanofeatures of TMDs for device use in an etchless manner. We detail an effective route based on BCP nanopatterning to precisely position TMD features at semiconductor surfaces with sub-l0 nm resolution.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"299 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133565556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626309
W. Kaiser, M. Rinderle, A. Gagliardi
The unique features of organic materials such as cost-efficient solution processability are accompanied by major drawbacks in terms of low charge carrier mobility. Typical organic materials which are of interest for the use in electronic devices are usually amorphous or semi-crystalline domains and exhibit a high degree of energetic and spatial disorder. We present a kinetic Monte Carlo study of the dependence of the charge transport processes on the degree of crystallinity and orientation in conjugated polymers. We implement the crystallinity using a correlation in the energetic landscape. As a test case, we consider the conjugated polymer poly(3-hexylthiophene) (P3HT).
{"title":"Impact of the Level and Orientation of Crystallinity on Charge Transport in Semi-Crystalline Organic Semiconductors","authors":"W. Kaiser, M. Rinderle, A. Gagliardi","doi":"10.1109/NANO.2018.8626309","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626309","url":null,"abstract":"The unique features of organic materials such as cost-efficient solution processability are accompanied by major drawbacks in terms of low charge carrier mobility. Typical organic materials which are of interest for the use in electronic devices are usually amorphous or semi-crystalline domains and exhibit a high degree of energetic and spatial disorder. We present a kinetic Monte Carlo study of the dependence of the charge transport processes on the degree of crystallinity and orientation in conjugated polymers. We implement the crystallinity using a correlation in the energetic landscape. As a test case, we consider the conjugated polymer poly(3-hexylthiophene) (P3HT).","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133654530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626320
R. Fechner, C. Chlub, E. Quandt, M. Kohl
This paper presents design, fabrication and characterization of a novel integrated optical waveguide switch that allows for coupling of an input port in either of two output ports. A new fabrication process has been developed to integrate a shape memory alloy (SMA) bimorph nanoactuator with a footprint below 5 $mu mathrm{m}^{2}$ on a silicon photonic chip. Optical measurements demonstrate a decrease in power transfer by 53 % for a decrease in gap size from 250 nm to 200 nm at a wavelength of 1300 nm, which is in line with FEM-based simulations. The simulations further indicate that a decrease in power transfer by 100% occurs at a gap size of 170 nm.
{"title":"A Shape Memory Alloy 1×2 Optical Waveguide Switch","authors":"R. Fechner, C. Chlub, E. Quandt, M. Kohl","doi":"10.1109/NANO.2018.8626320","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626320","url":null,"abstract":"This paper presents design, fabrication and characterization of a novel integrated optical waveguide switch that allows for coupling of an input port in either of two output ports. A new fabrication process has been developed to integrate a shape memory alloy (SMA) bimorph nanoactuator with a footprint below 5 $mu mathrm{m}^{2}$ on a silicon photonic chip. Optical measurements demonstrate a decrease in power transfer by 53 % for a decrease in gap size from 250 nm to 200 nm at a wavelength of 1300 nm, which is in line with FEM-based simulations. The simulations further indicate that a decrease in power transfer by 100% occurs at a gap size of 170 nm.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133767630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8706515
P. Tissera, S. Choe
A coordinated bacterial nanonetwork could be applicable to large and diverse application areas including nanomedicine, nanobiotechnology, green-nanoproducts, and so on. For the construction of a bio-inspired coordinated bacterial molecular communication (MC) nanonetwork, synchronization technique is essential. This paper presents a stochastic analytical model of the nanonetwork synchronization using quorum sensing (QS). The QS mechanism that controls bacterial behavior in a collective manner is often observed in bacterial community. Bacteria use secreted chemical signaling molecules called autoinducers (AI) to communicate with each other. For more practical analysis, the presented bacterial network model employs a birth death-based statistical approach with a logistic growth curve (S curve) instead existing deterministic approach with an exponential growth curve (J curve). Assume that the internal or external AI concentration is Gaussian-distributed with corresponding mean and variance. Via simulation, we analyze the global synchronization behavior of the presented bio-inspired nanonetwork in terms of synchronization time, bacterial density, and AI concentration.
{"title":"Stochastic analytical model of nanonetwork synchronization using quorum sensing","authors":"P. Tissera, S. Choe","doi":"10.1109/NANO.2018.8706515","DOIUrl":"https://doi.org/10.1109/NANO.2018.8706515","url":null,"abstract":"A coordinated bacterial nanonetwork could be applicable to large and diverse application areas including nanomedicine, nanobiotechnology, green-nanoproducts, and so on. For the construction of a bio-inspired coordinated bacterial molecular communication (MC) nanonetwork, synchronization technique is essential. This paper presents a stochastic analytical model of the nanonetwork synchronization using quorum sensing (QS). The QS mechanism that controls bacterial behavior in a collective manner is often observed in bacterial community. Bacteria use secreted chemical signaling molecules called autoinducers (AI) to communicate with each other. For more practical analysis, the presented bacterial network model employs a birth death-based statistical approach with a logistic growth curve (S curve) instead existing deterministic approach with an exponential growth curve (J curve). Assume that the internal or external AI concentration is Gaussian-distributed with corresponding mean and variance. Via simulation, we analyze the global synchronization behavior of the presented bio-inspired nanonetwork in terms of synchronization time, bacterial density, and AI concentration.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116162633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626383
Su Mengxing, Xie Dan, Sun Yilin, L. Weiwei, Ren Tianling
The Schottky barrier between 2D materials and metal always play an important role in the determination of the electrical and optical properties of the transistors. In this work, the Schottky barrier between Monolayer MoS2 and Cr has been carefully investigated under different temperature. The Schottky barrier height of MoS2 and Cr is calculated to be 0.189 eV under room temperature. As the temperature decreases, the contact resistance between MoS2 and Cr increases according to the output curves. The change mechanism is further analyzed using the photoluminescence spectrum under different temperatures. This work investigates the electronic and optical characteristics of MoS2-based FET under low temperature and provides guidance for better designing the layered transition-metal-dichalcogenides based devices.
{"title":"The Electrical Performances of Monolayer MoS2-Based Transistors Under Ultra-Low Temperature","authors":"Su Mengxing, Xie Dan, Sun Yilin, L. Weiwei, Ren Tianling","doi":"10.1109/NANO.2018.8626383","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626383","url":null,"abstract":"The Schottky barrier between 2D materials and metal always play an important role in the determination of the electrical and optical properties of the transistors. In this work, the Schottky barrier between Monolayer MoS2 and Cr has been carefully investigated under different temperature. The Schottky barrier height of MoS2 and Cr is calculated to be 0.189 eV under room temperature. As the temperature decreases, the contact resistance between MoS2 and Cr increases according to the output curves. The change mechanism is further analyzed using the photoluminescence spectrum under different temperatures. This work investigates the electronic and optical characteristics of MoS2-based FET under low temperature and provides guidance for better designing the layered transition-metal-dichalcogenides based devices.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116497041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626302
O. Krestinskaya, A. P. James
Probabilistic Neural Network (PNN) is a feedforward artificial neural network developed for solving classification problems. This paper proposes a hardware implementation of an approximated PNN (APNN) algorithm in which the conventional exponential function of the PNN is replaced with gated threshold logic. The weights of the PNN are approximated using a memristive crossbar architecture. In particular, the proposed algorithm performs normalization of the training weights, and quantization into 16 levels which significantly reduces the complexity of the circuit.
{"title":"Approximate Probabilistic Neural Networks with Gated Threshold Logic","authors":"O. Krestinskaya, A. P. James","doi":"10.1109/NANO.2018.8626302","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626302","url":null,"abstract":"Probabilistic Neural Network (PNN) is a feedforward artificial neural network developed for solving classification problems. This paper proposes a hardware implementation of an approximated PNN (APNN) algorithm in which the conventional exponential function of the PNN is replaced with gated threshold logic. The weights of the PNN are approximated using a memristive crossbar architecture. In particular, the proposed algorithm performs normalization of the training weights, and quantization into 16 levels which significantly reduces the complexity of the circuit.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117106562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626364
M. Jewel, F. Mokhtari-Koushyar, R. T. Chen, M. Chen
This paper introduces the development of a novel ink, design, fabrication, and characterization of all inkjet-printed two-dimensional (2D) materials-based field effect transistor with a high current on/off ratio. A stable and efficient method of inkjet printing is developed for nitrogen-doped graphene (N-graphene) nanosheets. Good area coverage of N-graphene percolation clusters is observed from the SEM image. The Raman spectrum reveals a high amount of disorder in the nanoflakes due to the nitrogen doping. A current on-off ratio of 336 is achieved for the transistor with a systematic combination of N-graphene and molybdenum disulfide (MoS2) percolation network channel. An EDS spectrum confirms the heterostructure of N-graphene and MoS2. To our best knowledge, this is the highest on/off ratio for a fully inkjet printed transistor based on 2D materials.
{"title":"All Inkjet-Printed High On/Off Ratio Two-Dimensional Materials Field Effect Transistor","authors":"M. Jewel, F. Mokhtari-Koushyar, R. T. Chen, M. Chen","doi":"10.1109/NANO.2018.8626364","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626364","url":null,"abstract":"This paper introduces the development of a novel ink, design, fabrication, and characterization of all inkjet-printed two-dimensional (2D) materials-based field effect transistor with a high current on/off ratio. A stable and efficient method of inkjet printing is developed for nitrogen-doped graphene (N-graphene) nanosheets. Good area coverage of N-graphene percolation clusters is observed from the SEM image. The Raman spectrum reveals a high amount of disorder in the nanoflakes due to the nitrogen doping. A current on-off ratio of 336 is achieved for the transistor with a systematic combination of N-graphene and molybdenum disulfide (MoS2) percolation network channel. An EDS spectrum confirms the heterostructure of N-graphene and MoS2. To our best knowledge, this is the highest on/off ratio for a fully inkjet printed transistor based on 2D materials.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115428400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626412
A. Kale, Nan Li, A. Stevenson
Acoustic concentration of target species inside fluidic media has gained attention as a pre-concentration step for improving the performance of several downstream applications. Majority of the existing literature on simulations of this phenomenon focuses upon a point particle assumption which states that the acoustic field responsible for concentration is unaffected by the particles treated as points in a liquid continuum. In reality, a non-zero volume occupied by the concentrating particles increasingly perturbs the local acoustic fields. This modifies the subsequent concentration process, thereby indicating a dynamic bi-directional coupling between the same and the driving acoustic fields. This paper demonstrates a novel finite element model that considers such a coupling for the first time. Acoustic concentration of latex beads inside a radially polarised piezoceramic tube filled with water is analysed as a proof of concept. By modelling the solid-liquid system as a mixture characterised by a particle volume fraction, and correlating the effective mixture properties with the acoustic fields, we show that the model is a substantial improvement over the point-particle approach. We conclude by discussing the further improvements possible in this model and potential applications where it can be implemented.
{"title":"An Improved Model for Acoustic Particle Concentration - A Case Study in Piezo-Tubes","authors":"A. Kale, Nan Li, A. Stevenson","doi":"10.1109/NANO.2018.8626412","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626412","url":null,"abstract":"Acoustic concentration of target species inside fluidic media has gained attention as a pre-concentration step for improving the performance of several downstream applications. Majority of the existing literature on simulations of this phenomenon focuses upon a point particle assumption which states that the acoustic field responsible for concentration is unaffected by the particles treated as points in a liquid continuum. In reality, a non-zero volume occupied by the concentrating particles increasingly perturbs the local acoustic fields. This modifies the subsequent concentration process, thereby indicating a dynamic bi-directional coupling between the same and the driving acoustic fields. This paper demonstrates a novel finite element model that considers such a coupling for the first time. Acoustic concentration of latex beads inside a radially polarised piezoceramic tube filled with water is analysed as a proof of concept. By modelling the solid-liquid system as a mixture characterised by a particle volume fraction, and correlating the effective mixture properties with the acoustic fields, we show that the model is a substantial improvement over the point-particle approach. We conclude by discussing the further improvements possible in this model and potential applications where it can be implemented.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115607424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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