Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626307
M. Fortunato, A. Rinaldi, A. Tamburrano, G. De Bellis, T. Dikonimos, N. Lisi, M. S. Sarto
In this work, we develop graphene-gold electrodes (GGEs) for flexible nanogenerators made of porous piezoelectric PVDF films. The bilayer electrode structure was conceived in order to avoid the short circuit between top and bottom electrodes produced through direct Au sputtering over the film surface. Gold was sputtered over chemical-vapor- deposition (CVD) grown graphene film, that was subsequently transferred onto a PVDF film. We analysed the morphology and electrical properties of GGEs with increasing Au thickness in order to optimize the electrode surface conductivity and to guarantee high flexibility. The piezoelectric coefficient $mathrm{d}_{33}$ of PVDF films and GGE-topped PVDF films were investigated through Piezoresponse Force Microscopy (PFM). We observed that the obtained values of $mathrm{d}_{33}$, with and without GGEs, are in agreement with each other. This result allows to directly correlate the nanoscale piezoelectric properties to macroscale piezoelectric properties. Furthermore, a flexible nanogenerator made by a PVDF film top- and bottom- contacted with the bilayer GGEs was measured using a commercial mini -shaker. The obtained results are in good agreement with the measured $mathrm{d}_{33}$ of the uncontacted PVDF film, obtained through PFM.
{"title":"Graphene -Gold Electrodes for Flexible Nanogenerators Based on Porous Piezoelectric PVDF Films","authors":"M. Fortunato, A. Rinaldi, A. Tamburrano, G. De Bellis, T. Dikonimos, N. Lisi, M. S. Sarto","doi":"10.1109/NANO.2018.8626307","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626307","url":null,"abstract":"In this work, we develop graphene-gold electrodes (GGEs) for flexible nanogenerators made of porous piezoelectric PVDF films. The bilayer electrode structure was conceived in order to avoid the short circuit between top and bottom electrodes produced through direct Au sputtering over the film surface. Gold was sputtered over chemical-vapor- deposition (CVD) grown graphene film, that was subsequently transferred onto a PVDF film. We analysed the morphology and electrical properties of GGEs with increasing Au thickness in order to optimize the electrode surface conductivity and to guarantee high flexibility. The piezoelectric coefficient $mathrm{d}_{33}$ of PVDF films and GGE-topped PVDF films were investigated through Piezoresponse Force Microscopy (PFM). We observed that the obtained values of $mathrm{d}_{33}$, with and without GGEs, are in agreement with each other. This result allows to directly correlate the nanoscale piezoelectric properties to macroscale piezoelectric properties. Furthermore, a flexible nanogenerator made by a PVDF film top- and bottom- contacted with the bilayer GGEs was measured using a commercial mini -shaker. The obtained results are in good agreement with the measured $mathrm{d}_{33}$ of the uncontacted PVDF film, obtained through PFM.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"191 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115612174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626348
A. Varpula, A. Shchepetov, K. Grigoras, J. Hassel, M. Prunnila, J. Ahopelto
The highly reduced thermal conductivity arising from confinement of acoustic phonons and enhanced phonon scattering in ultra-thin freestanding silicon membranes enables fabrication of sensitive thermal thermoelectric detectors. The devices show very low noise equivalent power of 13 pW/ Hz 1/2 and relatively fast operation. By optimizing the structure and electrical properties of the detector, the operation can approach the temperature fluctuation limit.
{"title":"Silicon Membranes for Nanophononics","authors":"A. Varpula, A. Shchepetov, K. Grigoras, J. Hassel, M. Prunnila, J. Ahopelto","doi":"10.1109/NANO.2018.8626348","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626348","url":null,"abstract":"The highly reduced thermal conductivity arising from confinement of acoustic phonons and enhanced phonon scattering in ultra-thin freestanding silicon membranes enables fabrication of sensitive thermal thermoelectric detectors. The devices show very low noise equivalent power of 13 pW/ Hz 1/2 and relatively fast operation. By optimizing the structure and electrical properties of the detector, the operation can approach the temperature fluctuation limit.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114177034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8706508
Nitai Debnath, Sumistha Das
Post transcriptional gene silencing through RNA interference (RNAi) technology has opened a new avenue to control insects. Due to several physicochemical properties the repression efficiency of gene expression by double stranded RNA (dsRNA) in insect cells is not very high. Nowadays nanoparticle (NP) mediated delivery of dsRNA is gradually gaining popularity to improve its gene silencing efficiency in insects. NP mediated delivery method will not only increase the stability of dsRNA, but also will facilitate its delivery and endosomal release for efficient gene silencing. Additionally, this delivery method is target specific, so will be safe to other organisms in the ecosystem. This technology has the potential to become a more sustainable and eco-friendly pest control method. The main challenge in widespread use of RNAi technology for controlling insect pests is the development of effective and reliable dsRNA delivery methods. Microinjection is not a viable method for triggering RNAi in insects at bulk scale, specifically if we think of controlling insect pests in agricultural set up. Here, we have developed a feeding assay based method to deliver dsRNA, tagged with nanocarriers, to knock down insect genes. This delivery approache has the potential to increase the retention time of the dsRNAs in the circulatory system by reducing the rate of clearance, protect the dsRNAs from gut nucleases, ensure stability of dsRNA in the lumen of the alimentary canal, facilitate targeting and uptake of the dsRNAs into the target cells and promote trafficking in the cytoplasm and uptake into RNA-induced silencing complex. This technology has the potential to become a more sustainable and eco-friendly pest control method and can also be utilized to control other insect vectors.
{"title":"Nanoparticle mediated RNAi in insects: A novel feeding assay based method for controlling insect pests","authors":"Nitai Debnath, Sumistha Das","doi":"10.1109/NANO.2018.8706508","DOIUrl":"https://doi.org/10.1109/NANO.2018.8706508","url":null,"abstract":"Post transcriptional gene silencing through RNA interference (RNAi) technology has opened a new avenue to control insects. Due to several physicochemical properties the repression efficiency of gene expression by double stranded RNA (dsRNA) in insect cells is not very high. Nowadays nanoparticle (NP) mediated delivery of dsRNA is gradually gaining popularity to improve its gene silencing efficiency in insects. NP mediated delivery method will not only increase the stability of dsRNA, but also will facilitate its delivery and endosomal release for efficient gene silencing. Additionally, this delivery method is target specific, so will be safe to other organisms in the ecosystem. This technology has the potential to become a more sustainable and eco-friendly pest control method. The main challenge in widespread use of RNAi technology for controlling insect pests is the development of effective and reliable dsRNA delivery methods. Microinjection is not a viable method for triggering RNAi in insects at bulk scale, specifically if we think of controlling insect pests in agricultural set up. Here, we have developed a feeding assay based method to deliver dsRNA, tagged with nanocarriers, to knock down insect genes. This delivery approache has the potential to increase the retention time of the dsRNAs in the circulatory system by reducing the rate of clearance, protect the dsRNAs from gut nucleases, ensure stability of dsRNA in the lumen of the alimentary canal, facilitate targeting and uptake of the dsRNAs into the target cells and promote trafficking in the cytoplasm and uptake into RNA-induced silencing complex. This technology has the potential to become a more sustainable and eco-friendly pest control method and can also be utilized to control other insect vectors.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114433143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626378
N. Neophytou, S. Foster, V. Vargiamaidis, D. Chakraborty, L. Oliveira, C. Kumarasinghe, M. Thesberg
In this work we use modelling and simulation to investigate directions in achieving large thermoelectric figure of merit ZT in hierarchically nanostructured materials. To this end we explore both reduction of thermal conductivity and improvement of the power factor. We employ a series of models and computational techniques, from analytical models to fully quantum mechanical non-equilibrium Green's function simulations and to large scale Monte Carlo simulations. We show that nanostructuring across different length scales, which can drastically reduce the thermal conductivity of thermoelectric materials, can also be designed to retain, or even improve the power factor.
{"title":"Simulation Studies of Nanostructured Thermoelectric Materials","authors":"N. Neophytou, S. Foster, V. Vargiamaidis, D. Chakraborty, L. Oliveira, C. Kumarasinghe, M. Thesberg","doi":"10.1109/NANO.2018.8626378","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626378","url":null,"abstract":"In this work we use modelling and simulation to investigate directions in achieving large thermoelectric figure of merit ZT in hierarchically nanostructured materials. To this end we explore both reduction of thermal conductivity and improvement of the power factor. We employ a series of models and computational techniques, from analytical models to fully quantum mechanical non-equilibrium Green's function simulations and to large scale Monte Carlo simulations. We show that nanostructuring across different length scales, which can drastically reduce the thermal conductivity of thermoelectric materials, can also be designed to retain, or even improve the power factor.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114563381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626302
O. Krestinskaya, A. P. James
Probabilistic Neural Network (PNN) is a feedforward artificial neural network developed for solving classification problems. This paper proposes a hardware implementation of an approximated PNN (APNN) algorithm in which the conventional exponential function of the PNN is replaced with gated threshold logic. The weights of the PNN are approximated using a memristive crossbar architecture. In particular, the proposed algorithm performs normalization of the training weights, and quantization into 16 levels which significantly reduces the complexity of the circuit.
{"title":"Approximate Probabilistic Neural Networks with Gated Threshold Logic","authors":"O. Krestinskaya, A. P. James","doi":"10.1109/NANO.2018.8626302","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626302","url":null,"abstract":"Probabilistic Neural Network (PNN) is a feedforward artificial neural network developed for solving classification problems. This paper proposes a hardware implementation of an approximated PNN (APNN) algorithm in which the conventional exponential function of the PNN is replaced with gated threshold logic. The weights of the PNN are approximated using a memristive crossbar architecture. In particular, the proposed algorithm performs normalization of the training weights, and quantization into 16 levels which significantly reduces the complexity of the circuit.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117106562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626364
M. Jewel, F. Mokhtari-Koushyar, R. T. Chen, M. Chen
This paper introduces the development of a novel ink, design, fabrication, and characterization of all inkjet-printed two-dimensional (2D) materials-based field effect transistor with a high current on/off ratio. A stable and efficient method of inkjet printing is developed for nitrogen-doped graphene (N-graphene) nanosheets. Good area coverage of N-graphene percolation clusters is observed from the SEM image. The Raman spectrum reveals a high amount of disorder in the nanoflakes due to the nitrogen doping. A current on-off ratio of 336 is achieved for the transistor with a systematic combination of N-graphene and molybdenum disulfide (MoS2) percolation network channel. An EDS spectrum confirms the heterostructure of N-graphene and MoS2. To our best knowledge, this is the highest on/off ratio for a fully inkjet printed transistor based on 2D materials.
{"title":"All Inkjet-Printed High On/Off Ratio Two-Dimensional Materials Field Effect Transistor","authors":"M. Jewel, F. Mokhtari-Koushyar, R. T. Chen, M. Chen","doi":"10.1109/NANO.2018.8626364","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626364","url":null,"abstract":"This paper introduces the development of a novel ink, design, fabrication, and characterization of all inkjet-printed two-dimensional (2D) materials-based field effect transistor with a high current on/off ratio. A stable and efficient method of inkjet printing is developed for nitrogen-doped graphene (N-graphene) nanosheets. Good area coverage of N-graphene percolation clusters is observed from the SEM image. The Raman spectrum reveals a high amount of disorder in the nanoflakes due to the nitrogen doping. A current on-off ratio of 336 is achieved for the transistor with a systematic combination of N-graphene and molybdenum disulfide (MoS2) percolation network channel. An EDS spectrum confirms the heterostructure of N-graphene and MoS2. To our best knowledge, this is the highest on/off ratio for a fully inkjet printed transistor based on 2D materials.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115428400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626416
L. Lu, N. Jamond, J. Eymerv, E. Lefeuvre, L. Mancini, L. Larzeau, A. Madouri, O. Saket, N. Gogneau, F. Julien, M. Tchernycheva
In this work, we fabricate and characterize piezogenerators based on GaN nanowire (NW) arrays. We integrate GaN NWs grown by either Plasma Assisted Molecular Beam Epitaxy (PA-MBE) or Metal Organic Chemical Vapor Deposition (MOCVD) techniques into a polymeric matrix to explore piezogeneration of rigid and flexible devices. Both types of devices show high sensitivity to external forces and mechanical robustness. With an enhanced mechanic-electrical conversion efficiency, these devices are good candidates for energy harvesting and force sensing applications.
{"title":"Nanogenerators based on piezoelectric GaN nanowires grown by PA-MBE and MOCVD","authors":"L. Lu, N. Jamond, J. Eymerv, E. Lefeuvre, L. Mancini, L. Larzeau, A. Madouri, O. Saket, N. Gogneau, F. Julien, M. Tchernycheva","doi":"10.1109/NANO.2018.8626416","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626416","url":null,"abstract":"In this work, we fabricate and characterize piezogenerators based on GaN nanowire (NW) arrays. We integrate GaN NWs grown by either Plasma Assisted Molecular Beam Epitaxy (PA-MBE) or Metal Organic Chemical Vapor Deposition (MOCVD) techniques into a polymeric matrix to explore piezogeneration of rigid and flexible devices. Both types of devices show high sensitivity to external forces and mechanical robustness. With an enhanced mechanic-electrical conversion efficiency, these devices are good candidates for energy harvesting and force sensing applications.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123163752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626377
A. Agrawal, Sarjana Yadav, A. Dhawan
In this paper, we demonstrate that the nature of surface plasmons in nano-structured gold films - with arrays of nanoholes - is significantly affected by variation in the period and the diameter of these nanoholes. These nanohole arrays in gold films can be employed for real-time sensing applications with enhanced sensitivity. In this paper, numerical simulations using rigorous coupled wave analysis (RCWA) are carried out to study the effect of different periods and diameters of the nanoholes on the angulo-spectral reflectance maps. These maps are analyzed in detail to study the dependence of surface plasmon behaviour on the geometrical parameters in these structures, and enhanced sensitivity is demonstrated for localized refractive index sensing.
{"title":"Enhanced sensitivity of SPR biological sensor based on nanohole arrays in gold films","authors":"A. Agrawal, Sarjana Yadav, A. Dhawan","doi":"10.1109/NANO.2018.8626377","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626377","url":null,"abstract":"In this paper, we demonstrate that the nature of surface plasmons in nano-structured gold films - with arrays of nanoholes - is significantly affected by variation in the period and the diameter of these nanoholes. These nanohole arrays in gold films can be employed for real-time sensing applications with enhanced sensitivity. In this paper, numerical simulations using rigorous coupled wave analysis (RCWA) are carried out to study the effect of different periods and diameters of the nanoholes on the angulo-spectral reflectance maps. These maps are analyzed in detail to study the dependence of surface plasmon behaviour on the geometrical parameters in these structures, and enhanced sensitivity is demonstrated for localized refractive index sensing.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121768588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626333
Wenjing Bai, Jianping Hu, Tingfeng Yang
In this paper, we introduce a novel negative-capacitance device, named as negative-capacitance independent dual-gate FinFETs (NC-IDG-FinFETs) that can reduce the number of transistors used in circuit designs. We stack thin ferroelectric (FE) layers into the two gate stacks of baseline traditional independent dual-gate FinFET devices. We chose HfSiO (with the typical anisotropy constants of $alpha_{FE}=-8.65mathrm{e}10$ cm/F, $beta_{FE}=1.92mathrm{e}20$ cm5/ F/C2, and $gamma_{FE}=0$ cm9/F/C4) as the material with negative capacitance effect. The high-K dielectric Hf02 is used between the FE layer and the channel. We optimize the turn-on currents, leakage currents, and the switching current ratio by adjusting ferroelectric thickness. Simulation results show that the proposed devices can increase the on-state current and decrease the leakage current, and increase the switching current ratio.
{"title":"Optimizations of Negative Capacitance Independent Dual-Gate FinFETs","authors":"Wenjing Bai, Jianping Hu, Tingfeng Yang","doi":"10.1109/NANO.2018.8626333","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626333","url":null,"abstract":"In this paper, we introduce a novel negative-capacitance device, named as negative-capacitance independent dual-gate FinFETs (NC-IDG-FinFETs) that can reduce the number of transistors used in circuit designs. We stack thin ferroelectric (FE) layers into the two gate stacks of baseline traditional independent dual-gate FinFET devices. We chose HfSiO (with the typical anisotropy constants of $alpha_{FE}=-8.65mathrm{e}10$ cm/F, $beta_{FE}=1.92mathrm{e}20$ cm5/ F/C2, and $gamma_{FE}=0$ cm9/F/C4) as the material with negative capacitance effect. The high-K dielectric Hf02 is used between the FE layer and the channel. We optimize the turn-on currents, leakage currents, and the switching current ratio by adjusting ferroelectric thickness. Simulation results show that the proposed devices can increase the on-state current and decrease the leakage current, and increase the switching current ratio.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122033312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626339
D. Fajstavr, P. Slepička, V. Švorčík
This paper investigates the preparation of composite metal-polymer nanostructures formed on the surface of polyethersulfone (PES) by an excimer laser beam. Conditions for laser beam modification varied with the laser fluence value and the number of pulses. The samples were further deposited with a layer of metals with a thickness of 5–15 nm and their surface morphology was examined by atomic force microscopy (AFM). Electrical properties of layers were also investigated. Composites prepared by this approach were studied futher for stability under laser modification.
{"title":"Preparation of Composite Periodic Metal-Polymer Nanostructures","authors":"D. Fajstavr, P. Slepička, V. Švorčík","doi":"10.1109/NANO.2018.8626339","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626339","url":null,"abstract":"This paper investigates the preparation of composite metal-polymer nanostructures formed on the surface of polyethersulfone (PES) by an excimer laser beam. Conditions for laser beam modification varied with the laser fluence value and the number of pulses. The samples were further deposited with a layer of metals with a thickness of 5–15 nm and their surface morphology was examined by atomic force microscopy (AFM). Electrical properties of layers were also investigated. Composites prepared by this approach were studied futher for stability under laser modification.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123797367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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