Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626335
Zongxian Yang, S. Zarabi, E. Fernandes, Isabel Rua, H. Debéda, A. Salehian, D. Nairn, Lan Wei
Real time electricity monitoring is critical to enable intelligent and customized energy management for users in residential and commercial buildings. Piezoelectric (PZT) energy harvesters (EHs) and sensors have been studied extensively and used for such application. One of the main application requirements is to design a cheap and robust system with flexibility to work with different PZT EHs without adjusting the circuit, enabling low-cost system upgrade or maintenance. This work aims at providing a low-cost and easily-maintainable solution to build wireless sensor network (WSN) for real-time electricity grid monitoring. This paper presents the design and integration of a self-contained, noninvasive system tested with two types of PZT EHs. The system is powered by EH, thus battery-less. The customized interface circuitry is designed to collect and regulate the energy from the EH. The dynamic power management ensures the system to work with two different EHs at a wide range of output power from micro-watt to milli-watt. The unit can achieve a read-transmit duty cycle from < 1min up to 18min, depending on the characteristics of different EHs and intensity of current passing through the wire being monitored, and is robust against unstable power input.
{"title":"Electricity Monitoring System with Interchangeable Piezoelectric Energy Harvesters and Dynamic Power Management Circuitry","authors":"Zongxian Yang, S. Zarabi, E. Fernandes, Isabel Rua, H. Debéda, A. Salehian, D. Nairn, Lan Wei","doi":"10.1109/NANO.2018.8626335","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626335","url":null,"abstract":"Real time electricity monitoring is critical to enable intelligent and customized energy management for users in residential and commercial buildings. Piezoelectric (PZT) energy harvesters (EHs) and sensors have been studied extensively and used for such application. One of the main application requirements is to design a cheap and robust system with flexibility to work with different PZT EHs without adjusting the circuit, enabling low-cost system upgrade or maintenance. This work aims at providing a low-cost and easily-maintainable solution to build wireless sensor network (WSN) for real-time electricity grid monitoring. This paper presents the design and integration of a self-contained, noninvasive system tested with two types of PZT EHs. The system is powered by EH, thus battery-less. The customized interface circuitry is designed to collect and regulate the energy from the EH. The dynamic power management ensures the system to work with two different EHs at a wide range of output power from micro-watt to milli-watt. The unit can achieve a read-transmit duty cycle from < 1min up to 18min, depending on the characteristics of different EHs and intensity of current passing through the wire being monitored, and is robust against unstable power input.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134620782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626420
J. Stanley, A. Gagliardi
The identification of suitable lead-free perovskites is crucial for their envisioned applications in photovoltaics. Efficient and accurate vetting of these compounds for a range of properties has recently been accomplished in high-throughput studies by use of statistical learning methods. Here we demonstrate how one such property, the fundamental bandgap, can be predicted for a family of inorganic mixed halide perovskites using fingerprints based solely on the atomic arrangement of the unit cell. Important trends and experimentally accessible factors controlling this property are thereby illuminated in a chemically intuitive manner.
{"title":"Machine Learning Bandgaps of Inorganic Mixed Halide Perovskites","authors":"J. Stanley, A. Gagliardi","doi":"10.1109/NANO.2018.8626420","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626420","url":null,"abstract":"The identification of suitable lead-free perovskites is crucial for their envisioned applications in photovoltaics. Efficient and accurate vetting of these compounds for a range of properties has recently been accomplished in high-throughput studies by use of statistical learning methods. Here we demonstrate how one such property, the fundamental bandgap, can be predicted for a family of inorganic mixed halide perovskites using fingerprints based solely on the atomic arrangement of the unit cell. Important trends and experimentally accessible factors controlling this property are thereby illuminated in a chemically intuitive manner.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131010052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8706513
C. Koca, E. Dinc, H. Ramezani, O. Akan
Neural interfaces will pave the way for novel treatment methods for neural disorders, which are due to communication problems in nervous system. Such disorders include spinal cord injuries, Alzheimer's and Multiple Sclerosis. In this work, we present a novel neural stimulator, which will act as the transmitter part of a neural interface. We perform in detail physical analysis of such a device for the first time, considering the electrostatic and capacitive effects. We also establish the stimulation requirements of the post-synaptic neuron and support our findings with COMSOL simulations. This work will pave the way to the design of more efficient neural stimulators.
{"title":"Performance analysis for capacitive electrical neural interfaces","authors":"C. Koca, E. Dinc, H. Ramezani, O. Akan","doi":"10.1109/NANO.2018.8706513","DOIUrl":"https://doi.org/10.1109/NANO.2018.8706513","url":null,"abstract":"Neural interfaces will pave the way for novel treatment methods for neural disorders, which are due to communication problems in nervous system. Such disorders include spinal cord injuries, Alzheimer's and Multiple Sclerosis. In this work, we present a novel neural stimulator, which will act as the transmitter part of a neural interface. We perform in detail physical analysis of such a device for the first time, considering the electrostatic and capacitive effects. We also establish the stimulation requirements of the post-synaptic neuron and support our findings with COMSOL simulations. This work will pave the way to the design of more efficient neural stimulators.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133018097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Three metamaterials-based label-free chemical sensors for volatile organic solutions sensing are demonstrated. They are complementary circle metamaterial (CCM), complementary square metamaterial (CSM), and complementary U-shape metamaterial (CUM) compared to fill without and with various kinds of volatile organic solutions. The sensitivities of devices are 274.37 nm/RIU, 684.21 nm/RIU, 727.27 nm/RIU for CCM, CSM, and CUM, respectively. The figure-of-merit of CUM can be enhanced 3.36-fold and 1.28-fold compared to that of CCM and CSM, respectively. This sensing approach can successfully recognize inorganic and organic solutions for chemical sensors in mid-IR wavelength range.
{"title":"Metamaterial-Based Label-Free Chemical Sensors for the Detection of Volatile Organic Solutions","authors":"Yu‐Sheng Lin, Ruijia Xu, Kanghong Yan, Jun Sha, Wenjun Chen, Ji Luo, Xiaoyan Liu, Shengrong Yang, Dongyuan Yao, Jitong Zhong, Shaoquan Liao, Yangbin Yu, Zefeng Xu, Yanlin Tong","doi":"10.1109/NANO.2018.8626254","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626254","url":null,"abstract":"Three metamaterials-based label-free chemical sensors for volatile organic solutions sensing are demonstrated. They are complementary circle metamaterial (CCM), complementary square metamaterial (CSM), and complementary U-shape metamaterial (CUM) compared to fill without and with various kinds of volatile organic solutions. The sensitivities of devices are 274.37 nm/RIU, 684.21 nm/RIU, 727.27 nm/RIU for CCM, CSM, and CUM, respectively. The figure-of-merit of CUM can be enhanced 3.36-fold and 1.28-fold compared to that of CCM and CSM, respectively. This sensing approach can successfully recognize inorganic and organic solutions for chemical sensors in mid-IR wavelength range.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114118636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626327
Megumi Ito, M. Ishii, A. Okazaki, Sangbum Kim, J. Okazawa, A. Nomura, K. Hosokawa, W. Haensch
Phase change memory (PCM) is being explored as a synaptic nanodevice for scalable and low-power neuromorphic circuits. We present a novel and lightweight method to refresh PCM cells after they saturate at their maximum conductance during the learning process. Our learning system is an event-based Restricted Boltzmann Machine with Spike Time Dependent Plasticity update rule using a modified contrastive divergence algorithm. By using our event-based neuromorphic circuit simulator and the MNIST handwritten digit dataset, we show that our refresh method reduces power consumption by decreasing the number of SET and RESET programming pulses while maintaining high learning accuracy.
{"title":"Lightweight Refresh Method for PCM-based Neuromorphic Circuits","authors":"Megumi Ito, M. Ishii, A. Okazaki, Sangbum Kim, J. Okazawa, A. Nomura, K. Hosokawa, W. Haensch","doi":"10.1109/NANO.2018.8626327","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626327","url":null,"abstract":"Phase change memory (PCM) is being explored as a synaptic nanodevice for scalable and low-power neuromorphic circuits. We present a novel and lightweight method to refresh PCM cells after they saturate at their maximum conductance during the learning process. Our learning system is an event-based Restricted Boltzmann Machine with Spike Time Dependent Plasticity update rule using a modified contrastive divergence algorithm. By using our event-based neuromorphic circuit simulator and the MNIST handwritten digit dataset, we show that our refresh method reduces power consumption by decreasing the number of SET and RESET programming pulses while maintaining high learning accuracy.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116450236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626246
M. Yadav, R. V. Ravi Shankar, Rohit Sharma
__Microwave assisted synthesis of colloidal Nickel nanocrystals is considered as an efficient technique to control particle size and their uniformity. This method is suitable for large-scale synthesis of the nanocrystals, which can have significant applications in memory devices. In this paper, we report microwave-assisted synthesis of colloidal nickel nanocrystals with an average size distribution of 5 nm. Colloidal nickel nanocrystals are spin coated over silicon dioxide wafer to understand the spin coating process reliability for memory device fabrication. Spin coated wafer surface is studied using atomic force microscopy and energy dispersive X -ray characterization methods. The synthesized nanocrystals are used for fabrication of non-volatile memory devices using spin coating process. We also present the process flow for fabrication and capacitance-voltage (C-V) characteristics of the fabricated device. Our results show significant flat band voltage shift of 4 V that indicates an excellent memory window for memory device.
{"title":"Microwave Aided Synthesis of Colloidal Nickel Nanocrystals for Memory Device Application","authors":"M. Yadav, R. V. Ravi Shankar, Rohit Sharma","doi":"10.1109/NANO.2018.8626246","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626246","url":null,"abstract":"__Microwave assisted synthesis of colloidal Nickel nanocrystals is considered as an efficient technique to control particle size and their uniformity. This method is suitable for large-scale synthesis of the nanocrystals, which can have significant applications in memory devices. In this paper, we report microwave-assisted synthesis of colloidal nickel nanocrystals with an average size distribution of 5 nm. Colloidal nickel nanocrystals are spin coated over silicon dioxide wafer to understand the spin coating process reliability for memory device fabrication. Spin coated wafer surface is studied using atomic force microscopy and energy dispersive X -ray characterization methods. The synthesized nanocrystals are used for fabrication of non-volatile memory devices using spin coating process. We also present the process flow for fabrication and capacitance-voltage (C-V) characteristics of the fabricated device. Our results show significant flat band voltage shift of 4 V that indicates an excellent memory window for memory device.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131844498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626240
G. Barbalinardo, Charles A. Sievers, Shunda Chen, D. Donadio
Alongside with exceptional electronic and optoelectronic properties, two-dimensional van der Waals materials present intriguing heat transport properties, such as ultra-high thermal conductivity. Here we perform molecular simulations to unravel how heat transport in these materials may be tuned upon mechanical strain and chemical transformations. Our study sheds light on the phononic structure and the thermal conductivity of strained and lithium-intercalated MoS2, and on the thermal boundary resistance among graphene layers.
{"title":"Thermal transport in finite-size van der Waals materials: Modeling and Simulations","authors":"G. Barbalinardo, Charles A. Sievers, Shunda Chen, D. Donadio","doi":"10.1109/NANO.2018.8626240","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626240","url":null,"abstract":"Alongside with exceptional electronic and optoelectronic properties, two-dimensional van der Waals materials present intriguing heat transport properties, such as ultra-high thermal conductivity. Here we perform molecular simulations to unravel how heat transport in these materials may be tuned upon mechanical strain and chemical transformations. Our study sheds light on the phononic structure and the thermal conductivity of strained and lithium-intercalated MoS2, and on the thermal boundary resistance among graphene layers.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133879416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8706507
V. Georgiev, Laia Vilà‐Nadal, L. Cronin, A. Asenov
This paper presents computational simulation of a conceptual low power non-volatile memory cell based on inorganic molecular metal oxide clusters (polyoxometalates (POM)). The storage media is embedded in the gate dielectric of a Fully Depleted Silicon On Insulator (FDSOI) device. The simulations are carried out using a multi-physics simulation framework, which allows us to evaluate the variability in the programming window of the molecular based flash cell with an 18 nm gate length. We have focused our study on the threshold voltage variability influenced by random dopant fluctuations and random special fluctuations of the molecules in the floating gate of the flash-cell. Our simulation framework and conclusions can be applied not only to the POM-based flash cell but also to flash cells based on alternative molecules used as a storage media.
{"title":"A multi-scale simulation study for optimization and variability evaluation of molecular based flash cell","authors":"V. Georgiev, Laia Vilà‐Nadal, L. Cronin, A. Asenov","doi":"10.1109/NANO.2018.8706507","DOIUrl":"https://doi.org/10.1109/NANO.2018.8706507","url":null,"abstract":"This paper presents computational simulation of a conceptual low power non-volatile memory cell based on inorganic molecular metal oxide clusters (polyoxometalates (POM)). The storage media is embedded in the gate dielectric of a Fully Depleted Silicon On Insulator (FDSOI) device. The simulations are carried out using a multi-physics simulation framework, which allows us to evaluate the variability in the programming window of the molecular based flash cell with an 18 nm gate length. We have focused our study on the threshold voltage variability influenced by random dopant fluctuations and random special fluctuations of the molecules in the floating gate of the flash-cell. Our simulation framework and conclusions can be applied not only to the POM-based flash cell but also to flash cells based on alternative molecules used as a storage media.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130526448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626293
Yingpeng Zhen, T. Gaol, B. P. Jelle
A radio frequency sputtering method was utilized and developed for tungsten oxide film preparation. The thickness of tungsten oxide film can be controlled at nano scale. Tungsten oxide thin films with thickness of ~36 nm was prepared and investigated. The morphologies and microstructures of the as-prepared tungsten oxide thin films were characterized using X-ray diffraction, scanning electron microscopy, and Flourier transform infrared spectroscopy. Tungsten oxide films utilized in the laboratory changed color from colorless to blue during electrochemical cycles, showing a potential for assembling electrochromic smart windows to modulate the transmitted solar radiations.
{"title":"Synthesis and Characterization of Tungsten Oxide Electrochromic Thin Films","authors":"Yingpeng Zhen, T. Gaol, B. P. Jelle","doi":"10.1109/NANO.2018.8626293","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626293","url":null,"abstract":"A radio frequency sputtering method was utilized and developed for tungsten oxide film preparation. The thickness of tungsten oxide film can be controlled at nano scale. Tungsten oxide thin films with thickness of ~36 nm was prepared and investigated. The morphologies and microstructures of the as-prepared tungsten oxide thin films were characterized using X-ray diffraction, scanning electron microscopy, and Flourier transform infrared spectroscopy. Tungsten oxide films utilized in the laboratory changed color from colorless to blue during electrochemical cycles, showing a potential for assembling electrochromic smart windows to modulate the transmitted solar radiations.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116595011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626376
U. Kumawat, Kamal Kumar, Nitin Gupta, A. Dhawan
In this study, we present Indium-rich InGaN thin film solar cells containing a periodic array of various plasmonic and dielectric nanostructures such as Ag nanogratings (NGs), ITO nanogratings, and Ag nanodiscs (NDs). Finite-difference time-domain (FDTD) simulations were carried out for solar cells containing nanostructures on the back side and on the front side of the solar cells, and an improvement in the performance of the solar cells was compared for the different geometries of these nanostructures. FDTD simulation results demonstrate a broadband absorption enhancement in the active-medium after employing a combination of Ag nanodiscs and ITO nanogratings. The Ag NDs lead to an enhanced surface plasmon-based scattering of longer wavelengths of light, while the ITO NGs lead to enhanced scattering of shorter wavelengths of light. This leads to a significant enhancement in optical absorption in the active medium, as well as in the short circuit current density, $mathrm{J}_{text{sc}}$, of these solar cells.
{"title":"Plasmonic and Dielectric Nanostructures for Improved Performance of Ingan thin Film Solar Cells","authors":"U. Kumawat, Kamal Kumar, Nitin Gupta, A. Dhawan","doi":"10.1109/NANO.2018.8626376","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626376","url":null,"abstract":"In this study, we present Indium-rich InGaN thin film solar cells containing a periodic array of various plasmonic and dielectric nanostructures such as Ag nanogratings (NGs), ITO nanogratings, and Ag nanodiscs (NDs). Finite-difference time-domain (FDTD) simulations were carried out for solar cells containing nanostructures on the back side and on the front side of the solar cells, and an improvement in the performance of the solar cells was compared for the different geometries of these nanostructures. FDTD simulation results demonstrate a broadband absorption enhancement in the active-medium after employing a combination of Ag nanodiscs and ITO nanogratings. The Ag NDs lead to an enhanced surface plasmon-based scattering of longer wavelengths of light, while the ITO NGs lead to enhanced scattering of shorter wavelengths of light. This leads to a significant enhancement in optical absorption in the active medium, as well as in the short circuit current density, $mathrm{J}_{text{sc}}$, of these solar cells.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125757147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：