Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626277
Bruno F.E. Matarèse, A. Kale, A. Stevenson
this work investigates the mechanical and dielectric properties of an ion-selective membrane based on PDMS:PEG:valinomycin, with a view to creating practical geometries for high performance ion sensing in a variety of realworld settings including healthcare, food industry and agriculture. We focus effort on measuring physical changes in the membrane that can be detected with simple sensors. First a dynamic mechanical analyser instrument was used to determine the effect of potassium ions on the real and imaginary bending storage modulus, loss tangent, glass transition temperature, temperature coefficient of millimeter sized PDMS samples. Second, a microwave dielectric analyser with a coaxial probe fixture was applied to the same sample to isolate dielectric shifts associated with ion uptake, namely the real and imaginary permittivities. These perturbation measurements performed for PDMS, PDMS:PEG and PDMS:PEG:V samples, provide strong evidence that alternatives to traditional electrochemical sensing devices can easily be constructed. Thus a plethora of new acoustic and capacitive sensing geometries arise. Thus there is the opportunity to integrate membranes into quartz crystal microbalance, surface acoustic wave and single-sided capacitance sensors. Some suggestions on suitable dimensions, aspect ratios, operating frequencies are provided.
{"title":"Enhanced ion-selective membrane sensors based on a novel electroacoustic measurement approach","authors":"Bruno F.E. Matarèse, A. Kale, A. Stevenson","doi":"10.1109/NANO.2018.8626277","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626277","url":null,"abstract":"this work investigates the mechanical and dielectric properties of an ion-selective membrane based on PDMS:PEG:valinomycin, with a view to creating practical geometries for high performance ion sensing in a variety of realworld settings including healthcare, food industry and agriculture. We focus effort on measuring physical changes in the membrane that can be detected with simple sensors. First a dynamic mechanical analyser instrument was used to determine the effect of potassium ions on the real and imaginary bending storage modulus, loss tangent, glass transition temperature, temperature coefficient of millimeter sized PDMS samples. Second, a microwave dielectric analyser with a coaxial probe fixture was applied to the same sample to isolate dielectric shifts associated with ion uptake, namely the real and imaginary permittivities. These perturbation measurements performed for PDMS, PDMS:PEG and PDMS:PEG:V samples, provide strong evidence that alternatives to traditional electrochemical sensing devices can easily be constructed. Thus a plethora of new acoustic and capacitive sensing geometries arise. Thus there is the opportunity to integrate membranes into quartz crystal microbalance, surface acoustic wave and single-sided capacitance sensors. Some suggestions on suitable dimensions, aspect ratios, operating frequencies are provided.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124155934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626237
Chuck Paeng, He Zhang, Y. Kim
Ion decoupled plasma technique with low ion energy have been used to demonstrate conformal shallow junctions of phosphorous with higher than l E20 of dopants for germanium (Ge). Adding antimony (Sb) in plasma-assisted doping was found to enhance the phosphorous (P) dopant level dramatically. Various annealing techniques were compared to understand the impact to dopant activation and levels to form shallow junctions with enhanced P level.
{"title":"Sb co-Doping to Enhance Phosphorous Level on Ge Using Ion Decoupled Plasma Process","authors":"Chuck Paeng, He Zhang, Y. Kim","doi":"10.1109/NANO.2018.8626237","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626237","url":null,"abstract":"Ion decoupled plasma technique with low ion energy have been used to demonstrate conformal shallow junctions of phosphorous with higher than l E20 of dopants for germanium (Ge). Adding antimony (Sb) in plasma-assisted doping was found to enhance the phosphorous (P) dopant level dramatically. Various annealing techniques were compared to understand the impact to dopant activation and levels to form shallow junctions with enhanced P level.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126142300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626222
Lina Tizani, I. Saadat, Cyril Aubry
Graphene membranes over Si etched cavities are fabricated to form the sensing element for micro gas sensors. The repeatability and stability of the sensor is dependent on stress and stretch of the graphene membrane which is related to the conformal to non-conformal morphology of the graphene. This in turn depends on the surface roughness of the Si surface that anchors the graphene film. In this paper we present the results of the optimization of the cavity formation process to allow for a smooth surface that allows superior adhesion of the graphene without extra stretching or tears.
{"title":"Fabrication and Optimization of Graphene Membrane for Gas Sensor Applications","authors":"Lina Tizani, I. Saadat, Cyril Aubry","doi":"10.1109/NANO.2018.8626222","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626222","url":null,"abstract":"Graphene membranes over Si etched cavities are fabricated to form the sensing element for micro gas sensors. The repeatability and stability of the sensor is dependent on stress and stretch of the graphene membrane which is related to the conformal to non-conformal morphology of the graphene. This in turn depends on the surface roughness of the Si surface that anchors the graphene film. In this paper we present the results of the optimization of the cavity formation process to allow for a smooth surface that allows superior adhesion of the graphene without extra stretching or tears.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126478505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626384
O. Balogun, B. Lu, Binghao Wang, A. Facchetti, T. Marks
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{"title":"Cross-Plane Thermal Conductivity Measurements in Self-Assembled Nanodielectric Heterostructures","authors":"O. Balogun, B. Lu, Binghao Wang, A. Facchetti, T. Marks","doi":"10.1109/NANO.2018.8626384","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626384","url":null,"abstract":"XXXXX","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129639040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626275
S. Kirbach, K. Kühnel, W. Weinreich
This paper presents the piezoelectric properties of silicon doped hafnium oxide $(text{Si}:text{HfO}_{2})$ thin films and their superior suitability for energy harvesting applications. Various layer thicknesses from 10 nm to 50 nm, executed as single layer and in a laminate structure, are investigated. The piezoelectric coefficient $mathrm{d}_{33,mathrm{f}}$ of the samples is measured via double beam laser interferometry (DBLI) and converted into $mathrm{d}_{33}$, based on a numerical simulation model. Values of up to $mathrm{d}_{33}=73$ pm/V are obtained. Finally, the $text{Si}:text{HfO}_{2}$ films are electrically investigated by evaluating a relative permittivity between 37 and 47, respectively.
{"title":"Piezoelectric Hafnium Oxide Thin Films for Energy-Harvesting Applications","authors":"S. Kirbach, K. Kühnel, W. Weinreich","doi":"10.1109/NANO.2018.8626275","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626275","url":null,"abstract":"This paper presents the piezoelectric properties of silicon doped hafnium oxide $(text{Si}:text{HfO}_{2})$ thin films and their superior suitability for energy harvesting applications. Various layer thicknesses from 10 nm to 50 nm, executed as single layer and in a laminate structure, are investigated. The piezoelectric coefficient $mathrm{d}_{33,mathrm{f}}$ of the samples is measured via double beam laser interferometry (DBLI) and converted into $mathrm{d}_{33}$, based on a numerical simulation model. Values of up to $mathrm{d}_{33}=73$ pm/V are obtained. Finally, the $text{Si}:text{HfO}_{2}$ films are electrically investigated by evaluating a relative permittivity between 37 and 47, respectively.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124596391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626236
Z. Kuncic, I. Marcus, P. Sanz-Leon, R. Higuchi, Y. Shingaya, M. Li, A. Stieg, J. Gimzewski, M. Aono, T. Nakayama
__The atomic switch is a novel nanotechnology that mimics the chemical synapse between neurons in response to electrical stimuli. When connected together in a self- organized manner, similar to a neuronal network, atomic switch networks exhibit emergent brain-like complexity properties, including nonlinear stochastic dynamics and memorization, making them a unique experimental system for emulating intelligence. Here we present a computational model developed to simulate atomic switch networks to explore the scope of emergent brain-like features. Our modelling results demonstrate the capacity for neuromorphic atomic switch networks to emulate long-term memory and generate scale-invariant fluctuations in signal transmission, in direct analogy to the brain.
{"title":"Emergent brain-like complexity from nanowire atomic switch networks: Towards neuromorphic synthetic intelligence","authors":"Z. Kuncic, I. Marcus, P. Sanz-Leon, R. Higuchi, Y. Shingaya, M. Li, A. Stieg, J. Gimzewski, M. Aono, T. Nakayama","doi":"10.1109/NANO.2018.8626236","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626236","url":null,"abstract":"__The atomic switch is a novel nanotechnology that mimics the chemical synapse between neurons in response to electrical stimuli. When connected together in a self- organized manner, similar to a neuronal network, atomic switch networks exhibit emergent brain-like complexity properties, including nonlinear stochastic dynamics and memorization, making them a unique experimental system for emulating intelligence. Here we present a computational model developed to simulate atomic switch networks to explore the scope of emergent brain-like features. Our modelling results demonstrate the capacity for neuromorphic atomic switch networks to emulate long-term memory and generate scale-invariant fluctuations in signal transmission, in direct analogy to the brain.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130923792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626231
K. Kuma, U. Kumawat, A. Dhawan
In this paper, we present organic solar cells (OSCs) containing plasmonic silver nanostructures in the active medium poly[[9-(l-octylnonyl)-9H-carbazole-2,7 -diyl]-2,5-thiophenediyl-2, 1,3-benzothiadiazole-4,7 -diyl-2,5-thiophenediyl] (PCDTBT):[6], [6]-phenyl C71 butyric acid methyl ester (PC71BM). Finite-difference time-domain (FDTD) modeling was employed to simulate the interaction of incident light with plasmonic nanostructures of different shapes, leading to a broadband absorption enhancement in the OSCs. It is demonstrated that this enhancement is primarily due to enhanced far field scattering - localized surface plasmon excitation - from the nanostructures in the active medium. We demonstrate a 25.28% increase in the short circuit current density, $mathrm{J}_{text{SC}}$ for the OSCs containing hexagonal nanodiscs in the active medium.
{"title":"Enhanced Absorption in Organic Solar Cells by employing Plasmonic Nanostructures","authors":"K. Kuma, U. Kumawat, A. Dhawan","doi":"10.1109/NANO.2018.8626231","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626231","url":null,"abstract":"In this paper, we present organic solar cells (OSCs) containing plasmonic silver nanostructures in the active medium poly[[9-(l-octylnonyl)-9H-carbazole-2,7 -diyl]-2,5-thiophenediyl-2, 1,3-benzothiadiazole-4,7 -diyl-2,5-thiophenediyl] (PCDTBT):[6], [6]-phenyl C71 butyric acid methyl ester (PC71BM). Finite-difference time-domain (FDTD) modeling was employed to simulate the interaction of incident light with plasmonic nanostructures of different shapes, leading to a broadband absorption enhancement in the OSCs. It is demonstrated that this enhancement is primarily due to enhanced far field scattering - localized surface plasmon excitation - from the nanostructures in the active medium. We demonstrate a 25.28% increase in the short circuit current density, $mathrm{J}_{text{SC}}$ for the OSCs containing hexagonal nanodiscs in the active medium.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130125490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626318
Miao Li, George Daniel, B. Kahn, Liam H. Ohara, B. Casse, Nathan Pretorius, B. Krusor, P. Mei, G. Whiting, C. Tonkin, D. Lupo
Fully printed radio frequency (RF) harvesters that operate at HF RFID and ISM frequency of 13.56 MHz are normally comprised of a small printed loop antenna. They work at short ranges using inductive coupling. In this paper, we present a novel screen printed large area E-field antenna incorporated with a printed organic diode rectifier that can provide close to 1 V dc voltage with 1 W input at a distance of a few meters. The unique high bulk capacitance of the printed organic diodes enables effective imaginary impedance matching to the antenna without an additional matching component. The results demonstrate the possibility of fully printed RF energy harvesters for long range operation at HF frequencies.
{"title":"All Printed Large Area E-field Antenna Utilizing Printed Organic Rectifying Diodes for RF Energy Harvesting","authors":"Miao Li, George Daniel, B. Kahn, Liam H. Ohara, B. Casse, Nathan Pretorius, B. Krusor, P. Mei, G. Whiting, C. Tonkin, D. Lupo","doi":"10.1109/NANO.2018.8626318","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626318","url":null,"abstract":"Fully printed radio frequency (RF) harvesters that operate at HF RFID and ISM frequency of 13.56 MHz are normally comprised of a small printed loop antenna. They work at short ranges using inductive coupling. In this paper, we present a novel screen printed large area E-field antenna incorporated with a printed organic diode rectifier that can provide close to 1 V dc voltage with 1 W input at a distance of a few meters. The unique high bulk capacitance of the printed organic diodes enables effective imaginary impedance matching to the antenna without an additional matching component. The results demonstrate the possibility of fully printed RF energy harvesters for long range operation at HF frequencies.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130174407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626387
A. Pligovka, A. Lazavenka, A. Zakhlebayeva
Two types of niobia columnlike nanostructures were synthesized by anodization, reanodization, and chemical etching of sputter-deposited Al/Nb metal layers. The morphological properties of synthesized niobia columnlike nanostructures were determined by means of scanning electron microscopy. The electro-physical characteristics of niobia columnlike nanostructures were investigated in two measurement schemes. Aluminum layers of thickness 500 nm were used as contact pads. The current-voltage I-U characteristic has a nonlinear and nonsymmetrical character. The rising of temperature leads to an increase of the current. This behavior may indicate a p-n or metal-semiconductor junction. The initial resistance at 23 °C was 60 and 120 kOhms, the specific resistance to the height of the columns was 87 and 116 kOhms·nm−1, the calculated temperature coefficient of resistance appeared to be negative and rather low: $-1.39times 10^{-2}$ and $-1.28times 10^{-2}mathrm{K}^{-1}$ for the niobia columnlike nanostructures reanodized at 300 and 450 V, respectively.
{"title":"Electro-Physical Properties of Niobia Columnlike Nanostructures via the Anodizing of Al/Nb Layers","authors":"A. Pligovka, A. Lazavenka, A. Zakhlebayeva","doi":"10.1109/NANO.2018.8626387","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626387","url":null,"abstract":"Two types of niobia columnlike nanostructures were synthesized by anodization, reanodization, and chemical etching of sputter-deposited Al/Nb metal layers. The morphological properties of synthesized niobia columnlike nanostructures were determined by means of scanning electron microscopy. The electro-physical characteristics of niobia columnlike nanostructures were investigated in two measurement schemes. Aluminum layers of thickness 500 nm were used as contact pads. The current-voltage I-U characteristic has a nonlinear and nonsymmetrical character. The rising of temperature leads to an increase of the current. This behavior may indicate a p-n or metal-semiconductor junction. The initial resistance at 23 °C was 60 and 120 kOhms, the specific resistance to the height of the columns was 87 and 116 kOhms·nm−1, the calculated temperature coefficient of resistance appeared to be negative and rather low: $-1.39times 10^{-2}$ and $-1.28times 10^{-2}mathrm{K}^{-1}$ for the niobia columnlike nanostructures reanodized at 300 and 450 V, respectively.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128696789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8706515
P. Tissera, S. Choe
A coordinated bacterial nanonetwork could be applicable to large and diverse application areas including nanomedicine, nanobiotechnology, green-nanoproducts, and so on. For the construction of a bio-inspired coordinated bacterial molecular communication (MC) nanonetwork, synchronization technique is essential. This paper presents a stochastic analytical model of the nanonetwork synchronization using quorum sensing (QS). The QS mechanism that controls bacterial behavior in a collective manner is often observed in bacterial community. Bacteria use secreted chemical signaling molecules called autoinducers (AI) to communicate with each other. For more practical analysis, the presented bacterial network model employs a birth death-based statistical approach with a logistic growth curve (S curve) instead existing deterministic approach with an exponential growth curve (J curve). Assume that the internal or external AI concentration is Gaussian-distributed with corresponding mean and variance. Via simulation, we analyze the global synchronization behavior of the presented bio-inspired nanonetwork in terms of synchronization time, bacterial density, and AI concentration.
{"title":"Stochastic analytical model of nanonetwork synchronization using quorum sensing","authors":"P. Tissera, S. Choe","doi":"10.1109/NANO.2018.8706515","DOIUrl":"https://doi.org/10.1109/NANO.2018.8706515","url":null,"abstract":"A coordinated bacterial nanonetwork could be applicable to large and diverse application areas including nanomedicine, nanobiotechnology, green-nanoproducts, and so on. For the construction of a bio-inspired coordinated bacterial molecular communication (MC) nanonetwork, synchronization technique is essential. This paper presents a stochastic analytical model of the nanonetwork synchronization using quorum sensing (QS). The QS mechanism that controls bacterial behavior in a collective manner is often observed in bacterial community. Bacteria use secreted chemical signaling molecules called autoinducers (AI) to communicate with each other. For more practical analysis, the presented bacterial network model employs a birth death-based statistical approach with a logistic growth curve (S curve) instead existing deterministic approach with an exponential growth curve (J curve). Assume that the internal or external AI concentration is Gaussian-distributed with corresponding mean and variance. Via simulation, we analyze the global synchronization behavior of the presented bio-inspired nanonetwork in terms of synchronization time, bacterial density, and AI concentration.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116162633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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