Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626307
M. Fortunato, A. Rinaldi, A. Tamburrano, G. De Bellis, T. Dikonimos, N. Lisi, M. S. Sarto
In this work, we develop graphene-gold electrodes (GGEs) for flexible nanogenerators made of porous piezoelectric PVDF films. The bilayer electrode structure was conceived in order to avoid the short circuit between top and bottom electrodes produced through direct Au sputtering over the film surface. Gold was sputtered over chemical-vapor- deposition (CVD) grown graphene film, that was subsequently transferred onto a PVDF film. We analysed the morphology and electrical properties of GGEs with increasing Au thickness in order to optimize the electrode surface conductivity and to guarantee high flexibility. The piezoelectric coefficient $mathrm{d}_{33}$ of PVDF films and GGE-topped PVDF films were investigated through Piezoresponse Force Microscopy (PFM). We observed that the obtained values of $mathrm{d}_{33}$, with and without GGEs, are in agreement with each other. This result allows to directly correlate the nanoscale piezoelectric properties to macroscale piezoelectric properties. Furthermore, a flexible nanogenerator made by a PVDF film top- and bottom- contacted with the bilayer GGEs was measured using a commercial mini -shaker. The obtained results are in good agreement with the measured $mathrm{d}_{33}$ of the uncontacted PVDF film, obtained through PFM.
{"title":"Graphene -Gold Electrodes for Flexible Nanogenerators Based on Porous Piezoelectric PVDF Films","authors":"M. Fortunato, A. Rinaldi, A. Tamburrano, G. De Bellis, T. Dikonimos, N. Lisi, M. S. Sarto","doi":"10.1109/NANO.2018.8626307","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626307","url":null,"abstract":"In this work, we develop graphene-gold electrodes (GGEs) for flexible nanogenerators made of porous piezoelectric PVDF films. The bilayer electrode structure was conceived in order to avoid the short circuit between top and bottom electrodes produced through direct Au sputtering over the film surface. Gold was sputtered over chemical-vapor- deposition (CVD) grown graphene film, that was subsequently transferred onto a PVDF film. We analysed the morphology and electrical properties of GGEs with increasing Au thickness in order to optimize the electrode surface conductivity and to guarantee high flexibility. The piezoelectric coefficient $mathrm{d}_{33}$ of PVDF films and GGE-topped PVDF films were investigated through Piezoresponse Force Microscopy (PFM). We observed that the obtained values of $mathrm{d}_{33}$, with and without GGEs, are in agreement with each other. This result allows to directly correlate the nanoscale piezoelectric properties to macroscale piezoelectric properties. Furthermore, a flexible nanogenerator made by a PVDF film top- and bottom- contacted with the bilayer GGEs was measured using a commercial mini -shaker. The obtained results are in good agreement with the measured $mathrm{d}_{33}$ of the uncontacted PVDF film, obtained through PFM.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"191 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115612174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626333
Wenjing Bai, Jianping Hu, Tingfeng Yang
In this paper, we introduce a novel negative-capacitance device, named as negative-capacitance independent dual-gate FinFETs (NC-IDG-FinFETs) that can reduce the number of transistors used in circuit designs. We stack thin ferroelectric (FE) layers into the two gate stacks of baseline traditional independent dual-gate FinFET devices. We chose HfSiO (with the typical anisotropy constants of $alpha_{FE}=-8.65mathrm{e}10$ cm/F, $beta_{FE}=1.92mathrm{e}20$ cm5/ F/C2, and $gamma_{FE}=0$ cm9/F/C4) as the material with negative capacitance effect. The high-K dielectric Hf02 is used between the FE layer and the channel. We optimize the turn-on currents, leakage currents, and the switching current ratio by adjusting ferroelectric thickness. Simulation results show that the proposed devices can increase the on-state current and decrease the leakage current, and increase the switching current ratio.
{"title":"Optimizations of Negative Capacitance Independent Dual-Gate FinFETs","authors":"Wenjing Bai, Jianping Hu, Tingfeng Yang","doi":"10.1109/NANO.2018.8626333","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626333","url":null,"abstract":"In this paper, we introduce a novel negative-capacitance device, named as negative-capacitance independent dual-gate FinFETs (NC-IDG-FinFETs) that can reduce the number of transistors used in circuit designs. We stack thin ferroelectric (FE) layers into the two gate stacks of baseline traditional independent dual-gate FinFET devices. We chose HfSiO (with the typical anisotropy constants of $alpha_{FE}=-8.65mathrm{e}10$ cm/F, $beta_{FE}=1.92mathrm{e}20$ cm5/ F/C2, and $gamma_{FE}=0$ cm9/F/C4) as the material with negative capacitance effect. The high-K dielectric Hf02 is used between the FE layer and the channel. We optimize the turn-on currents, leakage currents, and the switching current ratio by adjusting ferroelectric thickness. Simulation results show that the proposed devices can increase the on-state current and decrease the leakage current, and increase the switching current ratio.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122033312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626275
S. Kirbach, K. Kühnel, W. Weinreich
This paper presents the piezoelectric properties of silicon doped hafnium oxide $(text{Si}:text{HfO}_{2})$ thin films and their superior suitability for energy harvesting applications. Various layer thicknesses from 10 nm to 50 nm, executed as single layer and in a laminate structure, are investigated. The piezoelectric coefficient $mathrm{d}_{33,mathrm{f}}$ of the samples is measured via double beam laser interferometry (DBLI) and converted into $mathrm{d}_{33}$, based on a numerical simulation model. Values of up to $mathrm{d}_{33}=73$ pm/V are obtained. Finally, the $text{Si}:text{HfO}_{2}$ films are electrically investigated by evaluating a relative permittivity between 37 and 47, respectively.
{"title":"Piezoelectric Hafnium Oxide Thin Films for Energy-Harvesting Applications","authors":"S. Kirbach, K. Kühnel, W. Weinreich","doi":"10.1109/NANO.2018.8626275","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626275","url":null,"abstract":"This paper presents the piezoelectric properties of silicon doped hafnium oxide $(text{Si}:text{HfO}_{2})$ thin films and their superior suitability for energy harvesting applications. Various layer thicknesses from 10 nm to 50 nm, executed as single layer and in a laminate structure, are investigated. The piezoelectric coefficient $mathrm{d}_{33,mathrm{f}}$ of the samples is measured via double beam laser interferometry (DBLI) and converted into $mathrm{d}_{33}$, based on a numerical simulation model. Values of up to $mathrm{d}_{33}=73$ pm/V are obtained. Finally, the $text{Si}:text{HfO}_{2}$ films are electrically investigated by evaluating a relative permittivity between 37 and 47, respectively.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124596391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626277
Bruno F.E. Matarèse, A. Kale, A. Stevenson
this work investigates the mechanical and dielectric properties of an ion-selective membrane based on PDMS:PEG:valinomycin, with a view to creating practical geometries for high performance ion sensing in a variety of realworld settings including healthcare, food industry and agriculture. We focus effort on measuring physical changes in the membrane that can be detected with simple sensors. First a dynamic mechanical analyser instrument was used to determine the effect of potassium ions on the real and imaginary bending storage modulus, loss tangent, glass transition temperature, temperature coefficient of millimeter sized PDMS samples. Second, a microwave dielectric analyser with a coaxial probe fixture was applied to the same sample to isolate dielectric shifts associated with ion uptake, namely the real and imaginary permittivities. These perturbation measurements performed for PDMS, PDMS:PEG and PDMS:PEG:V samples, provide strong evidence that alternatives to traditional electrochemical sensing devices can easily be constructed. Thus a plethora of new acoustic and capacitive sensing geometries arise. Thus there is the opportunity to integrate membranes into quartz crystal microbalance, surface acoustic wave and single-sided capacitance sensors. Some suggestions on suitable dimensions, aspect ratios, operating frequencies are provided.
{"title":"Enhanced ion-selective membrane sensors based on a novel electroacoustic measurement approach","authors":"Bruno F.E. Matarèse, A. Kale, A. Stevenson","doi":"10.1109/NANO.2018.8626277","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626277","url":null,"abstract":"this work investigates the mechanical and dielectric properties of an ion-selective membrane based on PDMS:PEG:valinomycin, with a view to creating practical geometries for high performance ion sensing in a variety of realworld settings including healthcare, food industry and agriculture. We focus effort on measuring physical changes in the membrane that can be detected with simple sensors. First a dynamic mechanical analyser instrument was used to determine the effect of potassium ions on the real and imaginary bending storage modulus, loss tangent, glass transition temperature, temperature coefficient of millimeter sized PDMS samples. Second, a microwave dielectric analyser with a coaxial probe fixture was applied to the same sample to isolate dielectric shifts associated with ion uptake, namely the real and imaginary permittivities. These perturbation measurements performed for PDMS, PDMS:PEG and PDMS:PEG:V samples, provide strong evidence that alternatives to traditional electrochemical sensing devices can easily be constructed. Thus a plethora of new acoustic and capacitive sensing geometries arise. Thus there is the opportunity to integrate membranes into quartz crystal microbalance, surface acoustic wave and single-sided capacitance sensors. Some suggestions on suitable dimensions, aspect ratios, operating frequencies are provided.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124155934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626339
D. Fajstavr, P. Slepička, V. Švorčík
This paper investigates the preparation of composite metal-polymer nanostructures formed on the surface of polyethersulfone (PES) by an excimer laser beam. Conditions for laser beam modification varied with the laser fluence value and the number of pulses. The samples were further deposited with a layer of metals with a thickness of 5–15 nm and their surface morphology was examined by atomic force microscopy (AFM). Electrical properties of layers were also investigated. Composites prepared by this approach were studied futher for stability under laser modification.
{"title":"Preparation of Composite Periodic Metal-Polymer Nanostructures","authors":"D. Fajstavr, P. Slepička, V. Švorčík","doi":"10.1109/NANO.2018.8626339","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626339","url":null,"abstract":"This paper investigates the preparation of composite metal-polymer nanostructures formed on the surface of polyethersulfone (PES) by an excimer laser beam. Conditions for laser beam modification varied with the laser fluence value and the number of pulses. The samples were further deposited with a layer of metals with a thickness of 5–15 nm and their surface morphology was examined by atomic force microscopy (AFM). Electrical properties of layers were also investigated. Composites prepared by this approach were studied futher for stability under laser modification.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123797367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626257
V. Sessi, H. Mulaosmanovic, R. Hentschel, S. Pregl, T. Mikolajick, W. Weber
We report on a novel silicon nanowire-based field effect transistor with integrated ferroelectric gate oxide. The concept allows tuning the carrier transport in a non-volatile approach by switching the polarization in the ferroelectric layer close to the source Schottky-junction. We interpret the results in terms of tuning the transmissibility of the Schottky-junction for charge carriers. The experimental results provide a first step towards the integration of memory-in-logic concepts with reconfigurable nanowire transistors.
{"title":"Junction Tuning by Ferroelectric Switching in Silicon Nanowire Schottky-Barrier Field Effect Transistors","authors":"V. Sessi, H. Mulaosmanovic, R. Hentschel, S. Pregl, T. Mikolajick, W. Weber","doi":"10.1109/NANO.2018.8626257","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626257","url":null,"abstract":"We report on a novel silicon nanowire-based field effect transistor with integrated ferroelectric gate oxide. The concept allows tuning the carrier transport in a non-volatile approach by switching the polarization in the ferroelectric layer close to the source Schottky-junction. We interpret the results in terms of tuning the transmissibility of the Schottky-junction for charge carriers. The experimental results provide a first step towards the integration of memory-in-logic concepts with reconfigurable nanowire transistors.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130323723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626236
Z. Kuncic, I. Marcus, P. Sanz-Leon, R. Higuchi, Y. Shingaya, M. Li, A. Stieg, J. Gimzewski, M. Aono, T. Nakayama
__The atomic switch is a novel nanotechnology that mimics the chemical synapse between neurons in response to electrical stimuli. When connected together in a self- organized manner, similar to a neuronal network, atomic switch networks exhibit emergent brain-like complexity properties, including nonlinear stochastic dynamics and memorization, making them a unique experimental system for emulating intelligence. Here we present a computational model developed to simulate atomic switch networks to explore the scope of emergent brain-like features. Our modelling results demonstrate the capacity for neuromorphic atomic switch networks to emulate long-term memory and generate scale-invariant fluctuations in signal transmission, in direct analogy to the brain.
{"title":"Emergent brain-like complexity from nanowire atomic switch networks: Towards neuromorphic synthetic intelligence","authors":"Z. Kuncic, I. Marcus, P. Sanz-Leon, R. Higuchi, Y. Shingaya, M. Li, A. Stieg, J. Gimzewski, M. Aono, T. Nakayama","doi":"10.1109/NANO.2018.8626236","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626236","url":null,"abstract":"__The atomic switch is a novel nanotechnology that mimics the chemical synapse between neurons in response to electrical stimuli. When connected together in a self- organized manner, similar to a neuronal network, atomic switch networks exhibit emergent brain-like complexity properties, including nonlinear stochastic dynamics and memorization, making them a unique experimental system for emulating intelligence. Here we present a computational model developed to simulate atomic switch networks to explore the scope of emergent brain-like features. Our modelling results demonstrate the capacity for neuromorphic atomic switch networks to emulate long-term memory and generate scale-invariant fluctuations in signal transmission, in direct analogy to the brain.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130923792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626289
J. Cabibihan, K. K. Sadasivuni, Anas Tahir, Sadiya Waseem, N. Navkar, J. Abinahed, A. Al-Ansari
For tactile sensors to become useful technology, the required features should be flexibility, durability, and its sensitivity to physical contact. Conductive elastomer nanocomposites are widely used in fabricating a variety of electronic devices due to their excellent dispersion of the conductive nanomaterials. One such example is graphene in an elastomer matrix. In this study, we fabricated the transparent, flexible, and conductive force-responsive films from reduced graphene oxide (rGO)-filled polydimethylsiloxane (PDMS) elastomer composite. We used a simple yet unique way of mixing solution for composite preparation, which will enable an improved dispersion of filler in the matrix. Various characterization techniques were employed (i.e. SEM, FESEM, TEM, AFM XRD, UV visible spectroscopy, Raman studies, and impedance studies) to study the properties associated with the prepared thin film. The rGO was found to be well-dispersed in PDMS and it was found to behave appropriately as the sensing element during the capacitive force responsive mechanism in a metallic tip of surgical grasper. We anticipate that this kind of composites can find suitable applications for tactile sensing of surgical graspers.
为了使触觉传感器成为有用的技术，所需的特征应该是灵活性，耐用性和对物理接触的敏感性。导电弹性体纳米复合材料由于其优异的分散性能而被广泛应用于制造各种电子器件。其中一个例子是弹性体基体中的石墨烯。在这项研究中，我们用还原氧化石墨烯(rGO)填充聚二甲基硅氧烷(PDMS)弹性体复合材料制备了透明、柔性和导电的力响应薄膜。我们使用了一种简单而独特的混合溶液制备复合材料的方法，这将使填料在基体中的分散得到改善。采用各种表征技术(即SEM, FESEM, TEM, AFM, XRD, UV可见光谱，拉曼研究和阻抗研究)来研究与所制备薄膜相关的性能。研究发现，氧化石墨烯在PDMS中分散良好，并且在外科手术钳金属端部的电容力响应机制中作为传感元件表现得很好。我们期望这种复合材料能在外科手术抓握器的触觉传感中找到合适的应用。
{"title":"Graphene-filled PDMS Composite for Tactile Sensing of Surgical Graspers","authors":"J. Cabibihan, K. K. Sadasivuni, Anas Tahir, Sadiya Waseem, N. Navkar, J. Abinahed, A. Al-Ansari","doi":"10.1109/NANO.2018.8626289","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626289","url":null,"abstract":"For tactile sensors to become useful technology, the required features should be flexibility, durability, and its sensitivity to physical contact. Conductive elastomer nanocomposites are widely used in fabricating a variety of electronic devices due to their excellent dispersion of the conductive nanomaterials. One such example is graphene in an elastomer matrix. In this study, we fabricated the transparent, flexible, and conductive force-responsive films from reduced graphene oxide (rGO)-filled polydimethylsiloxane (PDMS) elastomer composite. We used a simple yet unique way of mixing solution for composite preparation, which will enable an improved dispersion of filler in the matrix. Various characterization techniques were employed (i.e. SEM, FESEM, TEM, AFM XRD, UV visible spectroscopy, Raman studies, and impedance studies) to study the properties associated with the prepared thin film. The rGO was found to be well-dispersed in PDMS and it was found to behave appropriately as the sensing element during the capacitive force responsive mechanism in a metallic tip of surgical grasper. We anticipate that this kind of composites can find suitable applications for tactile sensing of surgical graspers.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130992461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626384
O. Balogun, B. Lu, Binghao Wang, A. Facchetti, T. Marks
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{"title":"Cross-Plane Thermal Conductivity Measurements in Self-Assembled Nanodielectric Heterostructures","authors":"O. Balogun, B. Lu, Binghao Wang, A. Facchetti, T. Marks","doi":"10.1109/NANO.2018.8626384","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626384","url":null,"abstract":"XXXXX","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129639040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626318
Miao Li, George Daniel, B. Kahn, Liam H. Ohara, B. Casse, Nathan Pretorius, B. Krusor, P. Mei, G. Whiting, C. Tonkin, D. Lupo
Fully printed radio frequency (RF) harvesters that operate at HF RFID and ISM frequency of 13.56 MHz are normally comprised of a small printed loop antenna. They work at short ranges using inductive coupling. In this paper, we present a novel screen printed large area E-field antenna incorporated with a printed organic diode rectifier that can provide close to 1 V dc voltage with 1 W input at a distance of a few meters. The unique high bulk capacitance of the printed organic diodes enables effective imaginary impedance matching to the antenna without an additional matching component. The results demonstrate the possibility of fully printed RF energy harvesters for long range operation at HF frequencies.
{"title":"All Printed Large Area E-field Antenna Utilizing Printed Organic Rectifying Diodes for RF Energy Harvesting","authors":"Miao Li, George Daniel, B. Kahn, Liam H. Ohara, B. Casse, Nathan Pretorius, B. Krusor, P. Mei, G. Whiting, C. Tonkin, D. Lupo","doi":"10.1109/NANO.2018.8626318","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626318","url":null,"abstract":"Fully printed radio frequency (RF) harvesters that operate at HF RFID and ISM frequency of 13.56 MHz are normally comprised of a small printed loop antenna. They work at short ranges using inductive coupling. In this paper, we present a novel screen printed large area E-field antenna incorporated with a printed organic diode rectifier that can provide close to 1 V dc voltage with 1 W input at a distance of a few meters. The unique high bulk capacitance of the printed organic diodes enables effective imaginary impedance matching to the antenna without an additional matching component. The results demonstrate the possibility of fully printed RF energy harvesters for long range operation at HF frequencies.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130174407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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