Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626292
H. C. Bidsorkhi, Alessandro Giuseppe D Aloia, A. Tamburrano, G. De Bellis, M. S. Sarto
A porous graphene based PVDF aerogel is produced through a cost-effective procedure, for possible application as sweat sensor. The aerogel samples were characterized in terms of porosity, density, morphological and electrical properties through high-resolution scanning electron microscopy (HR-SEM) and time-monitoring of the sample dc electrical resistance.
{"title":"Porous Graphene Based PVDF Aerogel Composite for Sweat Sensing Applications","authors":"H. C. Bidsorkhi, Alessandro Giuseppe D Aloia, A. Tamburrano, G. De Bellis, M. S. Sarto","doi":"10.1109/NANO.2018.8626292","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626292","url":null,"abstract":"A porous graphene based PVDF aerogel is produced through a cost-effective procedure, for possible application as sweat sensor. The aerogel samples were characterized in terms of porosity, density, morphological and electrical properties through high-resolution scanning electron microscopy (HR-SEM) and time-monitoring of the sample dc electrical resistance.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133090640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626374
D. S. Choi, P. Taylor, K. J. Perry, G. Mallick, S. Karna
We have probed straightforwardly, thermoelectric (TE) properties of bismuth telluride (Bi2Te3) nanoplates grown via solvothermal method, without any modifications or optimization. The material was synthesized, its crystalline structure characterized, and prepared for TE measurements via sintering via Gleeble. Electron microscopy and diffraction data show highly crystalline hexagonal nanoplates with lateral growth direction. The thermoelectric properties of the sintered sample exhibit Seebeck coefficient of 21.118 uV/K which is in range of most optimized and engineered Bi2Te3 based TE devices. The results presented in this proceeding may prove invaluable in research and development of next-generation of low-dimension, low-costing thermoelectric devices and power generators.
{"title":"Thermoelectric Properties of Solvothermal Grown Bismuth Telluride Hexagonal Nanoplates","authors":"D. S. Choi, P. Taylor, K. J. Perry, G. Mallick, S. Karna","doi":"10.1109/NANO.2018.8626374","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626374","url":null,"abstract":"We have probed straightforwardly, thermoelectric (TE) properties of bismuth telluride (Bi2Te3) nanoplates grown via solvothermal method, without any modifications or optimization. The material was synthesized, its crystalline structure characterized, and prepared for TE measurements via sintering via Gleeble. Electron microscopy and diffraction data show highly crystalline hexagonal nanoplates with lateral growth direction. The thermoelectric properties of the sintered sample exhibit Seebeck coefficient of 21.118 uV/K which is in range of most optimized and engineered Bi2Te3 based TE devices. The results presented in this proceeding may prove invaluable in research and development of next-generation of low-dimension, low-costing thermoelectric devices and power generators.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133712823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626389
Aurlien Gimenez, K. Kho, T. Keyes
Based on the case study of listed enterprises in China’s coal industry, this paper constructs the environmental performance evaluation and implementation process by the data envelopment analysis. Analyze the scale efficiency, efficiency and projection value of 17 coal enterprises, meanwhile, make a horizontal comparison of the environmental performance level among coal enterprises. This paper makes scale improvement and relaxation improvement for invalid cells, finds out the environmental risk spots and makes recommendations for improvement, consequently can guide the coal enterprises to carry out environmental performance management actively and accept public supervision
{"title":"Nano-Substructed Periodic Gold Nanoarrays for SERS / MEF Applications","authors":"Aurlien Gimenez, K. Kho, T. Keyes","doi":"10.1109/NANO.2018.8626389","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626389","url":null,"abstract":"Based on the case study of listed enterprises in China’s coal industry, this paper constructs the environmental performance evaluation and implementation process by the data envelopment analysis. Analyze the scale efficiency, efficiency and projection value of 17 coal enterprises, meanwhile, make a horizontal comparison of the environmental performance level among coal enterprises. This paper makes scale improvement and relaxation improvement for invalid cells, finds out the environmental risk spots and makes recommendations for improvement, consequently can guide the coal enterprises to carry out environmental performance management actively and accept public supervision","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"222 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123167993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626241
M. Yasir, M. S. Ansari, V. K. Sharma
This paper presents an optimal design of a high performance DO-CCII based on FinFETs. Proposed DO-CCII works on supply voltage of $pm 0.9mathrm{V}$, The performance of the CCII has been thoroughly investigated in terms of DC, AC and transient characteristics of branch currents. CCII shows excellent high frequency response of currents. The 3dB BW for currents is 11 GHz. CCII provides excellent performance over its CMOS counterpart. Performance investigation has been done using HSPICE simulations.
{"title":"Performance Evaluation of a FinFET -based Dual-Output Second Generation Current Conveyor","authors":"M. Yasir, M. S. Ansari, V. K. Sharma","doi":"10.1109/NANO.2018.8626241","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626241","url":null,"abstract":"This paper presents an optimal design of a high performance DO-CCII based on FinFETs. Proposed DO-CCII works on supply voltage of $pm 0.9mathrm{V}$, The performance of the CCII has been thoroughly investigated in terms of DC, AC and transient characteristics of branch currents. CCII shows excellent high frequency response of currents. The 3dB BW for currents is 11 GHz. CCII provides excellent performance over its CMOS counterpart. Performance investigation has been done using HSPICE simulations.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124219342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626225
J. Andzane, K. Buks, M. Zubkins, M. Bechelany, M. Marnauza, M. Baitimirova, D. Erts
In this work, a simple catalyst-free vapour-solid deposition method is applied for controlled obtaining of two types (planar and disordered) continuous Bi2Se3 nanostructured thin films on different (fused quartz/glass, mica, graphene) substrates. Performed for the deposited thin films transport and thermoelectric characterization (type, concentration and mobility of the main charge carriers, Seebeck coefficient and power factor) showed that proposed deposition method allows to fabricate “low-doped” Bi2Se3 thin films with power factor comparable and even higher than reported for the Bi2Se3 thin films fabricated by molecular beam epitaxy technique.
{"title":"Structure-determined thermoelectric properties of Bi2Se3 thin films deposited by vapour-solid technique","authors":"J. Andzane, K. Buks, M. Zubkins, M. Bechelany, M. Marnauza, M. Baitimirova, D. Erts","doi":"10.1109/NANO.2018.8626225","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626225","url":null,"abstract":"In this work, a simple catalyst-free vapour-solid deposition method is applied for controlled obtaining of two types (planar and disordered) continuous Bi<inf>2</inf>Se<inf>3</inf> nanostructured thin films on different (fused quartz/glass, mica, graphene) substrates. Performed for the deposited thin films transport and thermoelectric characterization (type, concentration and mobility of the main charge carriers, Seebeck coefficient and power factor) showed that proposed deposition method allows to fabricate “low-doped” Bi<inf>2</inf>Se<inf>3</inf> thin films with power factor comparable and even higher than reported for the Bi<inf>2</inf>Se<inf>3</inf> thin films fabricated by molecular beam epitaxy technique.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"290 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114754260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626337
Jiafeng Wang, Jianping Hu, Wenjing Bai
In this paper, we introduce novel dual-threshold (DT) independent gate (IG) N-type Tunneling Field-effect Transistor (TFET) devices that can reduce the number of transistors used in circuit designs. We optimize the leakage currents by varying gate-on-drain overlapping based on typical symmetrical dual-gate structures, and then achieve high-Vth and low-Vth IG transistors by adjusting gate work function. TCAD simulation results show high-Vth and low-Vth IG N-type TFETs are logically equivalent to two short-gate (SG) transistors in series and parallel, respectively, with excellent electrical characteristics.
{"title":"Dual-threshold independent-gate N-type TFETs","authors":"Jiafeng Wang, Jianping Hu, Wenjing Bai","doi":"10.1109/NANO.2018.8626337","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626337","url":null,"abstract":"In this paper, we introduce novel dual-threshold (DT) independent gate (IG) N-type Tunneling Field-effect Transistor (TFET) devices that can reduce the number of transistors used in circuit designs. We optimize the leakage currents by varying gate-on-drain overlapping based on typical symmetrical dual-gate structures, and then achieve high-Vth and low-Vth IG transistors by adjusting gate work function. TCAD simulation results show high-Vth and low-Vth IG N-type TFETs are logically equivalent to two short-gate (SG) transistors in series and parallel, respectively, with excellent electrical characteristics.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114822813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626315
B. O'Sullivan, B. Patella, P. Lovera, A. O’Riordan
In this work, interdigitated arrays of nanowire electrodes are used with one array acting as the working electrode while the other is used to generate the required protons. Finite element simulations of the pH control electrodes were performed to provide insight on the generation and subsequent diffusion of protons. This informed the inter-tine spacing of the electrodes used. This electrochemical pH control method was then used to enable the detection of analytes of interest.
{"title":"Electrochemical pH Control at Gold Nanowires","authors":"B. O'Sullivan, B. Patella, P. Lovera, A. O’Riordan","doi":"10.1109/NANO.2018.8626315","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626315","url":null,"abstract":"In this work, interdigitated arrays of nanowire electrodes are used with one array acting as the working electrode while the other is used to generate the required protons. Finite element simulations of the pH control electrodes were performed to provide insight on the generation and subsequent diffusion of protons. This informed the inter-tine spacing of the electrodes used. This electrochemical pH control method was then used to enable the detection of analytes of interest.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"276 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117038992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626234
Faisl Alottebi, P. Seck, S. Karna, D. Seifu
Tri-layer thin films of Ferromagnet (FM)/ Topological Insulator (TI) IFerromagnet (FM) were synthesized using magnetron DC/ RF sputtering with Bi2Te3 and Bi2Se3 topological insulators as middle buffer layers. The multi-layered samples thus produced was studied using in-house built magneto-optic Kerr effect (MOKE) instrument, vibrating sample magnetometer (VSM), torque magnetometer (TMM), atomic and magnetic force microscopy (AFM / MFM), and ferromagnetic resonance (FMR). This system, that is FM/Insulator/FM on MgO (100) substrates, is a tunnel magneto resistance (TMR) structure often used in magnetic tunnel junction (MTJ) devices. The Fe layer and MgO substrate makes the Fe film act like a free standing Fe monolayer weak interaction between the Fe layer and MgO substrate makes the Fe film act like a free-standing layer, with enhanced magnetic moment [1], [2]. TMR effect is a method by which MTJs are used in developing magneto-resistive random access memory (MRAM), magnetic sensors, and novel logic devices. The main purpose behind this research is to measure the magnetic symmetry of Fe/TI/Fe structure and compare and contrast with the magnetic symmetry of multilayer films and nano-columns. In this presentation, we will present results from MOKE, VSM, TMM, AFM/MFM and FMR studies of Fe/TI/Fe.
{"title":"Magnetic Properties of Fe/Topological Insulator/Fe Multilayer Films and Nano-columns","authors":"Faisl Alottebi, P. Seck, S. Karna, D. Seifu","doi":"10.1109/NANO.2018.8626234","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626234","url":null,"abstract":"Tri-layer thin films of Ferromagnet (FM)/ Topological Insulator (TI) IFerromagnet (FM) were synthesized using magnetron DC/ RF sputtering with Bi2Te3 and Bi2Se3 topological insulators as middle buffer layers. The multi-layered samples thus produced was studied using in-house built magneto-optic Kerr effect (MOKE) instrument, vibrating sample magnetometer (VSM), torque magnetometer (TMM), atomic and magnetic force microscopy (AFM / MFM), and ferromagnetic resonance (FMR). This system, that is FM/Insulator/FM on MgO (100) substrates, is a tunnel magneto resistance (TMR) structure often used in magnetic tunnel junction (MTJ) devices. The Fe layer and MgO substrate makes the Fe film act like a free standing Fe monolayer weak interaction between the Fe layer and MgO substrate makes the Fe film act like a free-standing layer, with enhanced magnetic moment [1], [2]. TMR effect is a method by which MTJs are used in developing magneto-resistive random access memory (MRAM), magnetic sensors, and novel logic devices. The main purpose behind this research is to measure the magnetic symmetry of Fe/TI/Fe structure and compare and contrast with the magnetic symmetry of multilayer films and nano-columns. In this presentation, we will present results from MOKE, VSM, TMM, AFM/MFM and FMR studies of Fe/TI/Fe.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"188 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117283923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626388
Alexandra Erdt, C. Gutsche, J. Parisi, H. Borchert, J. Kolny-Olesiak
Here we present platinum-tin nanoparticles, which were obtained by sequential reduction. First monometallic platinum particles are prepared by reduction of plati-num(IV)chloride with tetrabutylammonium borohydride in toluene at room temperature with dodecylamine as a stabilizer. In the presence of these as-prepared particles, we reduce various amounts of bis[bis(trimethylsilyl)amino]tin(II) with diisobutylaluminum hydride. Depending on the amount of bis[bis(trimethylsilyl)amino]tin(II), we obtain different intermetallic platinum-tin phases like PtSn and PtSn2 as well as PtSn4 nanocrystals. Especially tin-rich particles provide an interesting surface structure for potential catalytic application. All particles were characterized by transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), energy-dispersive x-ray spectroscopy (EDX), and powder x-ray diffraction (XRD).
{"title":"Phase Controlled Intermetallic Platinum tin Nanoparticles in Seeded Growth Synthesis for Catalytic Applications","authors":"Alexandra Erdt, C. Gutsche, J. Parisi, H. Borchert, J. Kolny-Olesiak","doi":"10.1109/NANO.2018.8626388","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626388","url":null,"abstract":"Here we present platinum-tin nanoparticles, which were obtained by sequential reduction. First monometallic platinum particles are prepared by reduction of plati-num(IV)chloride with tetrabutylammonium borohydride in toluene at room temperature with dodecylamine as a stabilizer. In the presence of these as-prepared particles, we reduce various amounts of bis[bis(trimethylsilyl)amino]tin(II) with diisobutylaluminum hydride. Depending on the amount of bis[bis(trimethylsilyl)amino]tin(II), we obtain different intermetallic platinum-tin phases like PtSn and PtSn2 as well as PtSn4 nanocrystals. Especially tin-rich particles provide an interesting surface structure for potential catalytic application. All particles were characterized by transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), energy-dispersive x-ray spectroscopy (EDX), and powder x-ray diffraction (XRD).","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123998867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626314
A. Hardtdegen, F. Cüppers, M. von Witzleben, U. Böttger, S. Menzel, R. Waser, S. Hoffmann‐Eifert
Redox-based resistive random access memories (ReRAM) are promising candidates for the use in ‘beyond-von Neumann’ architectures. One key issue for utilizing ReRAM for e.g. neuromorphic applications is a gradual SET and RESET behavior, allowing to write various resistance states emulating synaptic weights. However, a typical SET event for filamentary-like valence change mechanism devices is happening abrupt due to its physical principle. In this work we demonstrate a gradual SET behavior for $text{HfO}_{2}/text{TiO}_{mathrm{x}}$ ReRAM cells in pulse mode. The results are discussed in view of the inherent properties of the particular bilayer structure.
{"title":"Characterization of HfO2/TiOx ReRAM Cells in Pulse Operation Mode","authors":"A. Hardtdegen, F. Cüppers, M. von Witzleben, U. Böttger, S. Menzel, R. Waser, S. Hoffmann‐Eifert","doi":"10.1109/NANO.2018.8626314","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626314","url":null,"abstract":"Redox-based resistive random access memories (ReRAM) are promising candidates for the use in ‘beyond-von Neumann’ architectures. One key issue for utilizing ReRAM for e.g. neuromorphic applications is a gradual SET and RESET behavior, allowing to write various resistance states emulating synaptic weights. However, a typical SET event for filamentary-like valence change mechanism devices is happening abrupt due to its physical principle. In this work we demonstrate a gradual SET behavior for $text{HfO}_{2}/text{TiO}_{mathrm{x}}$ ReRAM cells in pulse mode. The results are discussed in view of the inherent properties of the particular bilayer structure.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129691838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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