Silicon heterojunction (SHJ) solar cells have been heavily investigated for their low temperature coefficient and high bifaciality. Within the extensive research on SHJ solar cells, transparent conductive oxide (TCO), particularly indium tin oxide (ITO), have been a major focus due to their dual roles: ensuring efficient lateral conductance to minimize resistive losses, and optimizing light transmittance to minimize absorption losses. Due to the trade-off between the optical and electrical performance of ITO, researches on improving the optical and electrical performance simultaneously have been carried out. This study proposes a p-side double-layer ITO film with the bottom layer to be highly oxygen doped to enhance the optoelectrical properties of the ITO film, improving the contact between the ITO film and the underlying micro-crystalline silicon passivation layer, thereby enhancing the performance of SHJ solar cells. By incorporating a p-side double-layer ITO film with the bottom layer to have the optimized oxygen doping concentration of 2.7 %, enhancements in short-circuit current density (Jsc) (+0.11 mA cm−2), fill factor (FF) (+0.15 %), and consequently, power conversion efficiency (PCE) (+0.097 %) were achieved, while maintaining open-circuit voltage (Voc). This work contributes to the ongoing development and optimization of double-layer ITO films. Such double-layer structures offer the potential to overcome the optoelectrical trade-offs inherent in single-layer ITO films, thereby enabling enhanced performance in SHJ solar cells.
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