Completely buffer-free CIGSe solar cells feature a simplified device structure that enhances light absorption in the absorber and streamlines the fabrication process. In this study, such simplified-structure CIGSe devices based on Zn1-xMgxO:Al transparent electrodes were fabricated. The Zn1-xMgxO:Al films with varying Mg concentrations were prepared using a co-sputtering method. Experimental results demonstrate that Mg incorporation effectively tunes the energy band structure of Zn1-xMgxO:Al films as well as the band alignment at the Zn1-xMgxO:Al/CIGSe interface, leading to a significant improvement in device performance. Through the introduction of CdS layers with varying thicknesses, this study conducts a systematic analysis and comparative investigation of recombination mechanisms in devices with different p–n junction structures. The carrier recombination rates calculated from VOC–(G,T) measurements indicate that the dominant recombination pathway strongly depends on the device structure. For unoptimized buffer-free cells, severe recombination occurs at the p–n junction interface, due to the band alignment mismatch. This issue was significantly mitigated by introducing a positive conduction band offset at the Zn1-xMgxO:Al/CIGSe interface through Mg doping. As a result, a completely buffer-free CIGSe solar cell fabricated by sputtering process achieved an efficiency of 11.3 %, and the average efficiency showed a 34 % increase, demonstrating the potential of simplified-structure CIGSe solar cells.
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