Pub Date : 2019-05-01DOI: 10.31399/asm.edfa.2019-2.p010
B. Boudart, Y. Guhel
This article describes a new technique for measuring temperatures in GaN HEMTs. The method is based on Raman spectroscopy and the use of cerium oxide particles that act like micro-Raman thermometers when scanned with a UV laser. As the article explains, phonon line shifts due to Raman scattering are used to estimate the temperature of GaN layers while surface temperatures are obtained through the cerium oxide particles. The results presented also verify that the particles, which are distributed over semiconductor and metal surfaces, do not modify the electric characteristics of the GaN devices.
{"title":"Measuring Temperature in GaN HEMTs: An Approach Based on Raman Spectroscopy","authors":"B. Boudart, Y. Guhel","doi":"10.31399/asm.edfa.2019-2.p010","DOIUrl":"https://doi.org/10.31399/asm.edfa.2019-2.p010","url":null,"abstract":"\u0000 This article describes a new technique for measuring temperatures in GaN HEMTs. The method is based on Raman spectroscopy and the use of cerium oxide particles that act like micro-Raman thermometers when scanned with a UV laser. As the article explains, phonon line shifts due to Raman scattering are used to estimate the temperature of GaN layers while surface temperatures are obtained through the cerium oxide particles. The results presented also verify that the particles, which are distributed over semiconductor and metal surfaces, do not modify the electric characteristics of the GaN devices.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121817402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-05-01DOI: 10.31399/asm.edfa.2019-2.p054
N. Missert
This column assesses the current state and outlook for superconducting device technology and its application in exascale computing.
本专栏评估了超导器件技术及其在百亿亿次计算中的应用的现状和前景。
{"title":"Superconducting Electronics: A New Frontier for Failure Analysis and Reliability","authors":"N. Missert","doi":"10.31399/asm.edfa.2019-2.p054","DOIUrl":"https://doi.org/10.31399/asm.edfa.2019-2.p054","url":null,"abstract":"\u0000 This column assesses the current state and outlook for superconducting device technology and its application in exascale computing.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114780047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-05-01DOI: 10.31399/asm.edfa.2019-2.p030
F. Ganji, Domenic Forte, N. Asadizanjani, M. Tehranipoor, Damon Woodward
Integrated circuits embedded in everyday devices face an increased risk of tampering and intrusion. In this article, the authors explain how reverse engineering techniques, including automated image analysis, can be employed to provide trust and assurance when dealing with commercial off-the-shelf chips.
{"title":"The Power of IC Reverse Engineering for Hardware Trust and Assurance","authors":"F. Ganji, Domenic Forte, N. Asadizanjani, M. Tehranipoor, Damon Woodward","doi":"10.31399/asm.edfa.2019-2.p030","DOIUrl":"https://doi.org/10.31399/asm.edfa.2019-2.p030","url":null,"abstract":"\u0000 Integrated circuits embedded in everyday devices face an increased risk of tampering and intrusion. In this article, the authors explain how reverse engineering techniques, including automated image analysis, can be employed to provide trust and assurance when dealing with commercial off-the-shelf chips.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121516343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-05-01DOI: 10.31399/asm.edfa.2019-2.p016
Alan Yang, AmirEmad Ghassami, E. Rosenbaum, N. Kiyavash
The problem of constructing reliable systems out of unreliable components is usually dealt with through a combination of redundancy and early retirement. This article assesses the potential of an intelligent failure prediction system that depends more on diagnostic data and analytics than built-in redundancy and costly replacement.
{"title":"Data-driven Reliability for Datacenter Hard Disk Drives","authors":"Alan Yang, AmirEmad Ghassami, E. Rosenbaum, N. Kiyavash","doi":"10.31399/asm.edfa.2019-2.p016","DOIUrl":"https://doi.org/10.31399/asm.edfa.2019-2.p016","url":null,"abstract":"\u0000 The problem of constructing reliable systems out of unreliable components is usually dealt with through a combination of redundancy and early retirement. This article assesses the potential of an intelligent failure prediction system that depends more on diagnostic data and analytics than built-in redundancy and costly replacement.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116274595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-05-01DOI: 10.31399/asm.edfa.2019-2.p004
P. Tangyunyong, A. Rodarte
Laser stimulation is widely used to reveal defects in ICs through either heating or photonic effects. The standard approach is to use lasers with wavelengths above the bandgap wavelength of silicon to create localized heating and below it to generate photocurrent. In practice, most FAs use 1340 nm (IR) lasers for TIVA measurements and either 532 nm (visible) or 1064 nm (near IR) lasers for LIVA analysis. However, as this article demonstrates, visible and near IR lasers can also be used for TIVA analysis and, in some cases, may be preferrable based on signal strength and spatial resolution.
{"title":"TIVA Measurements with Visible and 1064-nm Lasers","authors":"P. Tangyunyong, A. Rodarte","doi":"10.31399/asm.edfa.2019-2.p004","DOIUrl":"https://doi.org/10.31399/asm.edfa.2019-2.p004","url":null,"abstract":"\u0000 Laser stimulation is widely used to reveal defects in ICs through either heating or photonic effects. The standard approach is to use lasers with wavelengths above the bandgap wavelength of silicon to create localized heating and below it to generate photocurrent. In practice, most FAs use 1340 nm (IR) lasers for TIVA measurements and either 532 nm (visible) or 1064 nm (near IR) lasers for LIVA analysis. However, as this article demonstrates, visible and near IR lasers can also be used for TIVA analysis and, in some cases, may be preferrable based on signal strength and spatial resolution.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123074490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-05-01DOI: 10.31399/asm.edfa.2019-2.p022
Guillaume Thin, F. Bourcier, H. Moisan
This article describes the qualification process for a 1.8 kW laser diode stack designed for the Mars Curiosity rover. The seven-bar stack serves as the optical pump in a boom-mounted spectroscope attached to the front of the rover. Each laser bar is made of 62 single emitters and generates 260 W of instantaneous optical power. A detailed design analysis of the diode stack is presented along with the results of overstress testing and failure analysis.
{"title":"Failure Risk Assessment of Laser Diode Stacks for a Martian Application","authors":"Guillaume Thin, F. Bourcier, H. Moisan","doi":"10.31399/asm.edfa.2019-2.p022","DOIUrl":"https://doi.org/10.31399/asm.edfa.2019-2.p022","url":null,"abstract":"\u0000 This article describes the qualification process for a 1.8 kW laser diode stack designed for the Mars Curiosity rover. The seven-bar stack serves as the optical pump in a boom-mounted spectroscope attached to the front of the rover. Each laser bar is made of 62 single emitters and generates 260 W of instantaneous optical power. A detailed design analysis of the diode stack is presented along with the results of overstress testing and failure analysis.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129062071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-02-01DOI: 10.31399/asm.edfa.2019-1.p020
Dusty Gray, D. Kendig, A. Tay, A. Shakouri
A noninvasive thermal imaging approach based on the thermoreflectance principle is proposed for analyzing advanced semiconductor devices. Several examples illustrate the value of this approach in detecting thermal anomalies and defects missed by other techniques.
{"title":"Ensuring Advanced Semiconductor Device Reliability using FA and Submicron Defect Detection","authors":"Dusty Gray, D. Kendig, A. Tay, A. Shakouri","doi":"10.31399/asm.edfa.2019-1.p020","DOIUrl":"https://doi.org/10.31399/asm.edfa.2019-1.p020","url":null,"abstract":"\u0000 A noninvasive thermal imaging approach based on the thermoreflectance principle is proposed for analyzing advanced semiconductor devices. Several examples illustrate the value of this approach in detecting thermal anomalies and defects missed by other techniques.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132275917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-02-01DOI: 10.31399/asm.edfa.2019-1.p012
Z. Liu, Ben Niewenhuis, Soumya Mittal, Phillip Fynan, R. D. Blanton
A new product-like test chip developed by engineers at Carnegie Mellon University overcomes the current limitations in conventional test chip design. This article discusses the advantages of the new chip, called the CM-LCV, and presents experimental results showing how it achieves fault coverages comparable to or better than benchmarking designs.
{"title":"An Automated Methodology for Logic Characterization Vehicle Design","authors":"Z. Liu, Ben Niewenhuis, Soumya Mittal, Phillip Fynan, R. D. Blanton","doi":"10.31399/asm.edfa.2019-1.p012","DOIUrl":"https://doi.org/10.31399/asm.edfa.2019-1.p012","url":null,"abstract":"\u0000 A new product-like test chip developed by engineers at Carnegie Mellon University overcomes the current limitations in conventional test chip design. This article discusses the advantages of the new chip, called the CM-LCV, and presents experimental results showing how it achieves fault coverages comparable to or better than benchmarking designs.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133643782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-02-01DOI: 10.31399/asm.edfa.2019-1.p032
The 44th International Symposium for Testing and Failure Analysis (ISTFA 2018) was held in Phoenix, Ariz., October 28 - November 1, 2018. This article provides a summary of the highlights and identifies key contributors to the event. It also includes a summary of a panel discussion on the topic “Failures Worth Analyzing.” It concludes with discussion highlights from the Focused Ion Beam, Sample Preparation, and Contactless Fault Isolation/Nanoprobing user group meetings held at the conference.
{"title":"ISTFA 2018 Highlights: All Things Failure Analysis, in Four Impactful Days","authors":"","doi":"10.31399/asm.edfa.2019-1.p032","DOIUrl":"https://doi.org/10.31399/asm.edfa.2019-1.p032","url":null,"abstract":"\u0000 The 44th International Symposium for Testing and Failure Analysis (ISTFA 2018) was held in Phoenix, Ariz., October 28 - November 1, 2018. This article provides a summary of the highlights and identifies key contributors to the event. It also includes a summary of a panel discussion on the topic “Failures Worth Analyzing.” It concludes with discussion highlights from the Focused Ion Beam, Sample Preparation, and Contactless Fault Isolation/Nanoprobing user group meetings held at the conference.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115355472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-02-01DOI: 10.31399/asm.edfa.2019-1.p004
Manish Sharma, Yan Pan
This article presents a recent breakthrough in the use of machine learning in semiconductor FA. For the first time, cell-internal defects in FinFETs have not only been detected and diagnosed, but also refined, clarified, and resolved using cell-aware diagnosis along with root cause deconvolution (RCD) techniques. The authors describe the development of the methodology and evaluate the incremental improvements made with each step.
{"title":"Machine Learning Inside the Cell to Solve Complex FinFET Defect Mechanisms with Volume Scan Diagnosis","authors":"Manish Sharma, Yan Pan","doi":"10.31399/asm.edfa.2019-1.p004","DOIUrl":"https://doi.org/10.31399/asm.edfa.2019-1.p004","url":null,"abstract":"This article presents a recent breakthrough in the use of machine learning in semiconductor FA. For the first time, cell-internal defects in FinFETs have not only been detected and diagnosed, but also refined, clarified, and resolved using cell-aware diagnosis along with root cause deconvolution (RCD) techniques. The authors describe the development of the methodology and evaluate the incremental improvements made with each step.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131704230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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