Pub Date : 2022-02-01DOI: 10.31399/asm.edfa.2022-1.p011
N. Browning, D. Nicholls, J. Wells, Alex W Robinson
This article discusses the tradeoffs associated with minimizing beam dose in a scanning transmission electron microscope (STEM) and explains how to reduce beam exposure through subsampling and inpainting, a signal reconstruction technique that optimizes image quality and resolution. Although the method is described in the context of STEM imaging, it applies to any scanned imaging system.
{"title":"Optimal Sampling and Reconstruction Strategies for Scanning Microscopes","authors":"N. Browning, D. Nicholls, J. Wells, Alex W Robinson","doi":"10.31399/asm.edfa.2022-1.p011","DOIUrl":"https://doi.org/10.31399/asm.edfa.2022-1.p011","url":null,"abstract":"\u0000 This article discusses the tradeoffs associated with minimizing beam dose in a scanning transmission electron microscope (STEM) and explains how to reduce beam exposure through subsampling and inpainting, a signal reconstruction technique that optimizes image quality and resolution. Although the method is described in the context of STEM imaging, it applies to any scanned imaging system.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128068838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-02-01DOI: 10.31399/asm.edfa.2022-1.p029
P. Rickhaus, P. Maletinsky
This article describes the basic measurement physics of scanning nitrogen vacancy (NV) microscopy and the various ways it can be used in semiconductor device failure analysis. Scanning NV microscopy can measure topography as well as magnetic fields, local current density, ac noise, and local temperature variations.
{"title":"Scanning Nitrogen Vacancy Magnetometry: A Quantum Technology for Device Failure Analysis","authors":"P. Rickhaus, P. Maletinsky","doi":"10.31399/asm.edfa.2022-1.p029","DOIUrl":"https://doi.org/10.31399/asm.edfa.2022-1.p029","url":null,"abstract":"\u0000 This article describes the basic measurement physics of scanning nitrogen vacancy (NV) microscopy and the various ways it can be used in semiconductor device failure analysis. Scanning NV microscopy can measure topography as well as magnetic fields, local current density, ac noise, and local temperature variations.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114788015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-02-01DOI: 10.31399/asm.edfa.2022-1.p003
M. Unterreitmeier, O. Nagler
Engineers at Infineon Technologies have developed a way to detect probing-induced fracture in semiconductor wafers in real-time using acoustic emission sensing and burst-signal energy filtering techniques. In this article, they describe the measurement procedure and demonstrate its use on complex semiconductor pad stacks. They also present experimental results that shed new light on the relationship between probe tip contact force and crack probability in thin, brittle layers typical of BEOL layer stacks in CMOS ICs.
{"title":"Determination of Indenter Crack Probability on Multilayer Stacks using an Acoustic Emission Test Method","authors":"M. Unterreitmeier, O. Nagler","doi":"10.31399/asm.edfa.2022-1.p003","DOIUrl":"https://doi.org/10.31399/asm.edfa.2022-1.p003","url":null,"abstract":"\u0000 Engineers at Infineon Technologies have developed a way to detect probing-induced fracture in semiconductor wafers in real-time using acoustic emission sensing and burst-signal energy filtering techniques. In this article, they describe the measurement procedure and demonstrate its use on complex semiconductor pad stacks. They also present experimental results that shed new light on the relationship between probe tip contact force and crack probability in thin, brittle layers typical of BEOL layer stacks in CMOS ICs.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117199082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-11-01DOI: 10.31399/asm.edfa.2021-4.p002
Jan Vardaman
This editorial discusses the emergence of chiplets and its potential impact on IC design, fabrication, and failure analysis.
这篇社论讨论了小芯片的出现及其对IC设计、制造和失效分析的潜在影响。
{"title":"Chiplets: A New Era in Advanced Packaging Emerges","authors":"Jan Vardaman","doi":"10.31399/asm.edfa.2021-4.p002","DOIUrl":"https://doi.org/10.31399/asm.edfa.2021-4.p002","url":null,"abstract":"\u0000 This editorial discusses the emergence of chiplets and its potential impact on IC design, fabrication, and failure analysis.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131202108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-11-01DOI: 10.31399/asm.edfa.2021-4.p057
M. Marinella
Analog computing is an important step in taking neural net processing to the next level. However, as this column explains, reliability is intimately linked to performance and efficiency in analog systems, more so than in any modern digital system, and further work is required to understand the relationship.
{"title":"Reliability Implications of Energy-Efficient Analog Processing","authors":"M. Marinella","doi":"10.31399/asm.edfa.2021-4.p057","DOIUrl":"https://doi.org/10.31399/asm.edfa.2021-4.p057","url":null,"abstract":"\u0000 Analog computing is an important step in taking neural net processing to the next level. However, as this column explains, reliability is intimately linked to performance and efficiency in analog systems, more so than in any modern digital system, and further work is required to understand the relationship.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122905159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-11-01DOI: 10.31399/asm.edfa.2021-4.p004
Y. Patel, Joshua Baur, Jonathan Scholl, Adam R. Waite, Adam G. Kimura, J. Kelley, Richard Ott, G. Via
Further development of SEM-based feature extraction tools for design validation and failure analysis is contingent on reliable sample preparation methods. This article describes how a delayering framework for 130 nm technology was adapted and used on a 45 nm SPI module consisting of 11 metal layers, 10 via layers, two layers of polysilicon, and an active silicon layer. It explains how different polishing and etching methods are used to expose each layer with sufficient contrast for SEM imaging and subsequent feature extraction. By combining polygon sets representing each layer, the full design of the device was reconstructed as shown in one of the images.
{"title":"A Sample Preparation Workflow for Delayering a 45 nm Node Serial Peripheral Interface Module","authors":"Y. Patel, Joshua Baur, Jonathan Scholl, Adam R. Waite, Adam G. Kimura, J. Kelley, Richard Ott, G. Via","doi":"10.31399/asm.edfa.2021-4.p004","DOIUrl":"https://doi.org/10.31399/asm.edfa.2021-4.p004","url":null,"abstract":"\u0000 Further development of SEM-based feature extraction tools for design validation and failure analysis is contingent on reliable sample preparation methods. This article describes how a delayering framework for 130 nm technology was adapted and used on a 45 nm SPI module consisting of 11 metal layers, 10 via layers, two layers of polysilicon, and an active silicon layer. It explains how different polishing and etching methods are used to expose each layer with sufficient contrast for SEM imaging and subsequent feature extraction. By combining polygon sets representing each layer, the full design of the device was reconstructed as shown in one of the images.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122791470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-11-01DOI: 10.31399/asm.edfa.2021-4.p028
M. Blain, R. Haltli, M. Revelle
Trapped ion systems are one of the leading technology platforms for quantum computing. This article describes the construction and operation of ion trap devices and the various modes of failure that have been observed. Examples of failure in either the rendering or use of packaged trap chips are presented, including electrode shorts and opens, detached bond wires, and RF breakdown damage.
{"title":"Failure Modes in Microfabricated Ion Trap Devices for Quantum Information Science","authors":"M. Blain, R. Haltli, M. Revelle","doi":"10.31399/asm.edfa.2021-4.p028","DOIUrl":"https://doi.org/10.31399/asm.edfa.2021-4.p028","url":null,"abstract":"\u0000 Trapped ion systems are one of the leading technology platforms for quantum computing. This article describes the construction and operation of ion trap devices and the various modes of failure that have been observed. Examples of failure in either the rendering or use of packaged trap chips are presented, including electrode shorts and opens, detached bond wires, and RF breakdown damage.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127795280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-11-01DOI: 10.31399/asm.edfa.2021-4.p014
D. Hunt, Dan Bader, P. Limbecker, Heiko Barth
This article discusses the failure analysis challenges associated with large overmolded 2.5D packages and explains how laser decapsulation followed by microwave-induced plasma (MIP) spot etching removes overmold while keeping everything else intact. It also describes a defect isolation procedure in which the sample is analyzed in a large chamber environmental SEM with its ball grid array directly wired to an EBAC amplifier.
{"title":"Methods to Enable Fault Isolation on 2.5D Molded Interposer Packages","authors":"D. Hunt, Dan Bader, P. Limbecker, Heiko Barth","doi":"10.31399/asm.edfa.2021-4.p014","DOIUrl":"https://doi.org/10.31399/asm.edfa.2021-4.p014","url":null,"abstract":"\u0000 This article discusses the failure analysis challenges associated with large overmolded 2.5D packages and explains how laser decapsulation followed by microwave-induced plasma (MIP) spot etching removes overmold while keeping everything else intact. It also describes a defect isolation procedure in which the sample is analyzed in a large chamber environmental SEM with its ball grid array directly wired to an EBAC amplifier.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133926862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-11-01DOI: 10.31399/asm.edfa.2021-4.p018
Jason Holm
This article provides a brief overview of STEM-in-SEM, discussing the pros and cons, recent advancements in detector technology, and the emergence of 4D STEM-in-SEM, a relatively new method that uses diffraction patterns recorded at different raster positions to enhance images offline in selected regions of interest.
{"title":"A Brief Overview of Scanning Transmission Electron Microscopy in a Scanning Electron Microscope","authors":"Jason Holm","doi":"10.31399/asm.edfa.2021-4.p018","DOIUrl":"https://doi.org/10.31399/asm.edfa.2021-4.p018","url":null,"abstract":"\u0000 This article provides a brief overview of STEM-in-SEM, discussing the pros and cons, recent advancements in detector technology, and the emergence of 4D STEM-in-SEM, a relatively new method that uses diffraction patterns recorded at different raster positions to enhance images offline in selected regions of interest.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121598541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-08-01DOI: 10.31399/asm.edfa.2021-3.p008
Mathias Heitauer, M. Versen
This article presents an automation workflow for the development of analog and mixed-signal devices similar to the two-stage process used for the design and verification of logic ICs. The use of a co-simulation interface makes it possible to build and verify failure models.
{"title":"Evaluation of a Co-Simulation Approach for Functional Verification of Analog and Mixed Signal Devices","authors":"Mathias Heitauer, M. Versen","doi":"10.31399/asm.edfa.2021-3.p008","DOIUrl":"https://doi.org/10.31399/asm.edfa.2021-3.p008","url":null,"abstract":"\u0000 This article presents an automation workflow for the development of analog and mixed-signal devices similar to the two-stage process used for the design and verification of logic ICs. The use of a co-simulation interface makes it possible to build and verify failure models.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122530024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：