Pub Date : 2020-08-01DOI: 10.31399/asm.edfa.2020-3.p018
S. Lau, S. Gul, G. Zan, D. Vine, S. Lewis, W. Yun
Modified Talbot X-ray interferometry provides three contrast modes simultaneously: absorption, phase, and dark field/scattering. This article describes the powerful new imaging technique and shows how it is used to characterize various types of defects in advanced semiconductor packages.
{"title":"Defect Characterization of Advanced Packages using Novel Phase and Dark Field X-Ray Imaging","authors":"S. Lau, S. Gul, G. Zan, D. Vine, S. Lewis, W. Yun","doi":"10.31399/asm.edfa.2020-3.p018","DOIUrl":"https://doi.org/10.31399/asm.edfa.2020-3.p018","url":null,"abstract":"\u0000 Modified Talbot X-ray interferometry provides three contrast modes simultaneously: absorption, phase, and dark field/scattering. This article describes the powerful new imaging technique and shows how it is used to characterize various types of defects in advanced semiconductor packages.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127030174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.31399/asm.edfa.2020-3.p008
C. Bergès
Failure analysis is the study and presentation of observable or measurable phenomena. Risk assessment, on the other hand, is when root causes are studied to predict the potential for future failures. In this article, the author describes a structured problem-solving approach that consists of failure analysis, risk assessment, and advanced modeling. A case study is also presented in which the probability of future failures, due to a delamination defect, is determined based on field returns.
{"title":"Failure Analysis, Statistical Risk Assessment, and Advanced Modeling in a Structured Problem Solving Approach: Case Study for a Delamination Defect in the Automotive Semiconductor Industry","authors":"C. Bergès","doi":"10.31399/asm.edfa.2020-3.p008","DOIUrl":"https://doi.org/10.31399/asm.edfa.2020-3.p008","url":null,"abstract":"\u0000 Failure analysis is the study and presentation of observable or measurable phenomena. Risk assessment, on the other hand, is when root causes are studied to predict the potential for future failures. In this article, the author describes a structured problem-solving approach that consists of failure analysis, risk assessment, and advanced modeling. A case study is also presented in which the probability of future failures, due to a delamination defect, is determined based on field returns.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114617249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.31399/asm.edfa.2020-3.p004
Noor Jehan Saujauddin, Kevin Davidson, Esther P.Y. Chen
Three case studies involving 14 nm SRAM technology show how progressive FIB cross-sectioning and top-down analysis can be supplemented with nanoprobing and TEM tomography to determine the root cause of failure. In the first case, the memory failure is traced to an abnormal gate profile. In the second case, the failure is attributed to a metal line short, and in the third case, a gate defect.
{"title":"SRAM Physical Failure Analysis Challenges in Technology Nodes Beyond 14 nm","authors":"Noor Jehan Saujauddin, Kevin Davidson, Esther P.Y. Chen","doi":"10.31399/asm.edfa.2020-3.p004","DOIUrl":"https://doi.org/10.31399/asm.edfa.2020-3.p004","url":null,"abstract":"\u0000 Three case studies involving 14 nm SRAM technology show how progressive FIB cross-sectioning and top-down analysis can be supplemented with nanoprobing and TEM tomography to determine the root cause of failure. In the first case, the memory failure is traced to an abnormal gate profile. In the second case, the failure is attributed to a metal line short, and in the third case, a gate defect.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126291257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.31399/asm.edfa.2020-3.p028
Hiroki Mitsuta, T. Takezaki, K. Sakai, Kenta Sumikawa, Masakatsu Murai, Kotaro Kikukawa
Scanning acoustic tomography (SAT) is widely used to detect defects such as voids and delamination in electronic devices. In this article, the authors explain how they improved the spatial resolution and detection sensitivity of SAT by switching from a conventional piezoelectric probe to a capacitive micromachined ultrasound transducer (CMUT) and by using pulse compression signal processing. They also present examples showing how the improvement makes it possible to detect very small defects in multilayer stacks and BGA packages whether in through-transmission or reflection imaging mode.
{"title":"Improved Signal Detection Sensitivity for High Resolution Imaging in Scanning Acoustic Tomography","authors":"Hiroki Mitsuta, T. Takezaki, K. Sakai, Kenta Sumikawa, Masakatsu Murai, Kotaro Kikukawa","doi":"10.31399/asm.edfa.2020-3.p028","DOIUrl":"https://doi.org/10.31399/asm.edfa.2020-3.p028","url":null,"abstract":"\u0000 Scanning acoustic tomography (SAT) is widely used to detect defects such as voids and delamination in electronic devices. In this article, the authors explain how they improved the spatial resolution and detection sensitivity of SAT by switching from a conventional piezoelectric probe to a capacitive micromachined ultrasound transducer (CMUT) and by using pulse compression signal processing. They also present examples showing how the improvement makes it possible to detect very small defects in multilayer stacks and BGA packages whether in through-transmission or reflection imaging mode.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133226880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-05-01DOI: 10.31399/asm.edfa.2020-2.p004
F. Khatkhatay, P. S. Pichumani
The causes of failure in flip-chip packaged devices are often found at the interface between the die and package. Exposing the site of interest usually entails some form of mechanical cross-sectioning with the sample embedded in an epoxy puck. This article brings attention to some of the drawbacks with the current approach and presents a solution in the form of a redesigned puck. As test results show, the new puck significantly reduces polishing time, and when cast with a conductive epoxy, minimizes charging artifacts and image distortion during SEM analysis. It also facilitates easy sample removal for subsequent analysis.
{"title":"Innovative Puck Design for the Mechanical Cross-Sectioning and Subsequent Analysis of Semiconductor Packaged Samples in Failure Analysis","authors":"F. Khatkhatay, P. S. Pichumani","doi":"10.31399/asm.edfa.2020-2.p004","DOIUrl":"https://doi.org/10.31399/asm.edfa.2020-2.p004","url":null,"abstract":"\u0000 The causes of failure in flip-chip packaged devices are often found at the interface between the die and package. Exposing the site of interest usually entails some form of mechanical cross-sectioning with the sample embedded in an epoxy puck. This article brings attention to some of the drawbacks with the current approach and presents a solution in the form of a redesigned puck. As test results show, the new puck significantly reduces polishing time, and when cast with a conductive epoxy, minimizes charging artifacts and image distortion during SEM analysis. It also facilitates easy sample removal for subsequent analysis.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123470094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-05-01DOI: 10.31399/asm.edfa.2020-2.p022
Lucile C. Teague Sheridan, D. Nedeau
Scanning capacitance microscopy (SCM) and nanoprobing are key tools for isolating and understanding transistor level fails. In this case study, SCM and nanoprobing are used to determine the electrical characteristics of cluster-type failures in 14 nm SOI FinFET SRAM after standard FIB cross-section imaging failed to reveal any visible defects.
扫描电容显微镜(SCM)和纳米探针是隔离和了解晶体管级故障的关键工具。在本案例研究中，在标准FIB横截面成像未能显示任何可见缺陷后，使用SCM和纳米探针来确定14nm SOI FinFET SRAM中簇型故障的电特性。
{"title":"Combined SCM and Nanoprobing Study of Resistive Fails on SOI FinFET Devices","authors":"Lucile C. Teague Sheridan, D. Nedeau","doi":"10.31399/asm.edfa.2020-2.p022","DOIUrl":"https://doi.org/10.31399/asm.edfa.2020-2.p022","url":null,"abstract":"\u0000 Scanning capacitance microscopy (SCM) and nanoprobing are key tools for isolating and understanding transistor level fails. In this case study, SCM and nanoprobing are used to determine the electrical characteristics of cluster-type failures in 14 nm SOI FinFET SRAM after standard FIB cross-section imaging failed to reveal any visible defects.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128173182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-05-01DOI: 10.31399/asm.edfa.2020-2.p016
Frances S. Chance
This article presents a control model that may have application to automated wafer-level die testing and characterization. Mimicking the behavior of a dragonfly in pursuit of prey, the model implements a form of proportional navigation that optimizes interception trajectories based on feedforward error signals derived from image data.
{"title":"A Biologically Inspired Approach to Interception","authors":"Frances S. Chance","doi":"10.31399/asm.edfa.2020-2.p016","DOIUrl":"https://doi.org/10.31399/asm.edfa.2020-2.p016","url":null,"abstract":"\u0000 This article presents a control model that may have application to automated wafer-level die testing and characterization. Mimicking the behavior of a dragonfly in pursuit of prey, the model implements a form of proportional navigation that optimizes interception trajectories based on feedforward error signals derived from image data.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126851100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-02-01DOI: 10.31399/asm.edfa.2020-1.p004
D. Ward, S. Schmucker, E. Anderson, E. Bussmann, L. Tracy, T. Lu, L. Maurer, A. Baczewski, Deanna Campbell, M. Marshall, S. Misra
The ability to place atoms one by one at specific atomic sites was first used to create functioning electronic devices in the late 1990s. Since then, the process known as atomic precision advanced manufacturing (APAM) has been further developed and both academic and commercial interest in its potential has grown. This article describes the nuances of the process, explaining that it places dopants into silicon using surface chemistry, a mechanism not typically used in microfabrication. It also discusses ongoing efforts to develop more complex quantum devices using APAM techniques and outlines the challenges involved in interfacing APAM and CMOS devices on the same die.
{"title":"Atomic Precision Advanced Manufacturing for Digital Electronics","authors":"D. Ward, S. Schmucker, E. Anderson, E. Bussmann, L. Tracy, T. Lu, L. Maurer, A. Baczewski, Deanna Campbell, M. Marshall, S. Misra","doi":"10.31399/asm.edfa.2020-1.p004","DOIUrl":"https://doi.org/10.31399/asm.edfa.2020-1.p004","url":null,"abstract":"\u0000 The ability to place atoms one by one at specific atomic sites was first used to create functioning electronic devices in the late 1990s. Since then, the process known as atomic precision advanced manufacturing (APAM) has been further developed and both academic and commercial interest in its potential has grown. This article describes the nuances of the process, explaining that it places dopants into silicon using surface chemistry, a mechanism not typically used in microfabrication. It also discusses ongoing efforts to develop more complex quantum devices using APAM techniques and outlines the challenges involved in interfacing APAM and CMOS devices on the same die.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128423798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-02-01DOI: 10.31399/asm.edfa.2020-1.p026
Jason Holm, B. Caplins
This article describes an ebook titled STEM-in-SEM: Introduction to Scanning Transmission Electron Microscopy for Microelectronics Failure Analysis, intended as an introductory tutorial for those with little or no transmission imaging experience and as a source of ideas for SEM users looking to expand the imaging and diffraction capabilities of their equipment.
{"title":"Ebook Preview: STEM-in-SEM Imaging Techniques for Microelectronics Failure Analysis","authors":"Jason Holm, B. Caplins","doi":"10.31399/asm.edfa.2020-1.p026","DOIUrl":"https://doi.org/10.31399/asm.edfa.2020-1.p026","url":null,"abstract":"\u0000 This article describes an ebook titled STEM-in-SEM: Introduction to Scanning Transmission Electron Microscopy for Microelectronics Failure Analysis, intended as an introductory tutorial for those with little or no transmission imaging experience and as a source of ideas for SEM users looking to expand the imaging and diffraction capabilities of their equipment.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116568514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-02-01DOI: 10.31399/asm.edfa.2020-1.p030
The 45th International Symposium for Testing and Failure Analysis (ISTFA 2019) was held in Portland, Oregon, November 10-14, 2019. This article gives a brief summary of the highlights and identifies key contributors to the event. It also includes highlights of panel discussions from the inaugural meeting of Women in Electronics Failure Analysis (WEFA) and the panel discussion "What Does Artificial Intelligence Mean to Failure Analysis Engineers?" The article concludes with a brief recap of each of the four User Group meetings that took place during the conference: Sample Prep, System on Package, FIB/Circuit Edit, and Nanoprobing.
{"title":"ISTFA 2019 Highlights","authors":"","doi":"10.31399/asm.edfa.2020-1.p030","DOIUrl":"https://doi.org/10.31399/asm.edfa.2020-1.p030","url":null,"abstract":"\u0000 The 45th International Symposium for Testing and Failure Analysis (ISTFA 2019) was held in Portland, Oregon, November 10-14, 2019. This article gives a brief summary of the highlights and identifies key contributors to the event. It also includes highlights of panel discussions from the inaugural meeting of Women in Electronics Failure Analysis (WEFA) and the panel discussion \"What Does Artificial Intelligence Mean to Failure Analysis Engineers?\" The article concludes with a brief recap of each of the four User Group meetings that took place during the conference: Sample Prep, System on Package, FIB/Circuit Edit, and Nanoprobing.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114581948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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