Pub Date : 2021-08-01DOI: 10.31399/asm.edfa.2021-3.p004
P. Tangyunyong
Integrated circuits are subjected to various forms of friction during fabrication and packaging, creating potential problems due to the buildup of charge. This article looks at the distinct characteristics of triboelectric charging damage on silicon-on-insulator devices at the wafer and package level. Telltale signs of this type of damage include spatial dependency, distinct TIVA-signal patterns, and bimodal static current distributions with significant changes after burn-in.
{"title":"Triboelectric Charging Damage in Silicon-on-Insulator Devices","authors":"P. Tangyunyong","doi":"10.31399/asm.edfa.2021-3.p004","DOIUrl":"https://doi.org/10.31399/asm.edfa.2021-3.p004","url":null,"abstract":"\u0000 Integrated circuits are subjected to various forms of friction during fabrication and packaging, creating potential problems due to the buildup of charge. This article looks at the distinct characteristics of triboelectric charging damage on silicon-on-insulator devices at the wafer and package level. Telltale signs of this type of damage include spatial dependency, distinct TIVA-signal patterns, and bimodal static current distributions with significant changes after burn-in.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134633729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-08-01DOI: 10.31399/asm.edfa.2021-3.p051
K. Serrels
This column discusses past, present, and future activities associated with the development of the EDFAS FA Technology Roadmap.
本专栏讨论与EDFAS FA技术路线图开发相关的过去、现在和未来的活动。
{"title":"The EDFAS FA Technology Roadmap: A Path to the Future","authors":"K. Serrels","doi":"10.31399/asm.edfa.2021-3.p051","DOIUrl":"https://doi.org/10.31399/asm.edfa.2021-3.p051","url":null,"abstract":"\u0000 This column discusses past, present, and future activities associated with the development of the EDFAS FA Technology Roadmap.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123777484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-08-01DOI: 10.31399/asm.edfa.2021-3.p013
S. Russ
Circuit boards are vulnerable to a wide range of ill-intentioned modifications done to gain access to information or malevolently influence control. This article describes the various ways attacks on circuit board can occur and presents examples showing how such attacks might look. It also provides general guidelines for protecting circuit-board design integrity.
{"title":"The Threat of Malicious Circuit-Board Alteration: Attack Taxonomy and Examples","authors":"S. Russ","doi":"10.31399/asm.edfa.2021-3.p013","DOIUrl":"https://doi.org/10.31399/asm.edfa.2021-3.p013","url":null,"abstract":"\u0000 Circuit boards are vulnerable to a wide range of ill-intentioned modifications done to gain access to information or malevolently influence control. This article describes the various ways attacks on circuit board can occur and presents examples showing how such attacks might look. It also provides general guidelines for protecting circuit-board design integrity.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115862857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-08-01DOI: 10.31399/asm.edfa.2021-3.p024
S. Chef, C. T. Chua, Chee Lip Gan
This article describes a novel method for improving image resolution achieved using time-resolved photon emission techniques. Instead of directly generating images from photon counting, all detected photons are displayed as a point cloud in 3D space and a new higher-resolution image is generated based on probability density functions associated with photon distributions. Unsupervised learning algorithms identify photon distribution patterns as well as fainter emission sources.
{"title":"Machine Learning for Time-Resolved Emission: Image Resolution Enhancement","authors":"S. Chef, C. T. Chua, Chee Lip Gan","doi":"10.31399/asm.edfa.2021-3.p024","DOIUrl":"https://doi.org/10.31399/asm.edfa.2021-3.p024","url":null,"abstract":"\u0000 This article describes a novel method for improving image resolution achieved using time-resolved photon emission techniques. Instead of directly generating images from photon counting, all detected photons are displayed as a point cloud in 3D space and a new higher-resolution image is generated based on probability density functions associated with photon distributions. Unsupervised learning algorithms identify photon distribution patterns as well as fainter emission sources.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122512649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-05-01DOI: 10.31399/asm.edfa.2021-2.p022
H. Wang, M. Chen, Y.L. Liu, L. Theil Kuhn, J. Bowen
Long-term stability studies indicate that cathode degradation is one of the main failure mechanisms in anode-supported SOFCs. In order to better understand the microstructural degradation mechanisms of the cathode and the influence of oxygen partial pressure at relevant operating temperatures, the authors of this article acquired TEM samples from technological cells to study cation interdiffusion mechanisms and LSM-YSZ interactions, particularly in areas where LSM grains are in contact with YSZ electrolyte. Here they present and interpret the results.
{"title":"TEM Study of Oxygen Partial Pressure Effect on Early LSM-YSZ Surface Interactions in Solid Oxide Fuel Cells","authors":"H. Wang, M. Chen, Y.L. Liu, L. Theil Kuhn, J. Bowen","doi":"10.31399/asm.edfa.2021-2.p022","DOIUrl":"https://doi.org/10.31399/asm.edfa.2021-2.p022","url":null,"abstract":"\u0000 Long-term stability studies indicate that cathode degradation is one of the main failure mechanisms in anode-supported SOFCs. In order to better understand the microstructural degradation mechanisms of the cathode and the influence of oxygen partial pressure at relevant operating temperatures, the authors of this article acquired TEM samples from technological cells to study cation interdiffusion mechanisms and LSM-YSZ interactions, particularly in areas where LSM grains are in contact with YSZ electrolyte. Here they present and interpret the results.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130825501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-05-01DOI: 10.31399/asm.edfa.2021-2.p004
Chengjie Xi, Aslam A. Khan, M. Tanjidur Rahman, N. Asadizanjani
The inverted orientation of a flip-chip packaged die makes it vulnerable to optical attacks from the backside. This article discusses the nature of that vulnerability, assesses the threats posed by optical inspection tools and techniques, and provides insights on effective countermeasures.
{"title":"Security Assessment of IC Packaging Against Optical Attacks","authors":"Chengjie Xi, Aslam A. Khan, M. Tanjidur Rahman, N. Asadizanjani","doi":"10.31399/asm.edfa.2021-2.p004","DOIUrl":"https://doi.org/10.31399/asm.edfa.2021-2.p004","url":null,"abstract":"\u0000 The inverted orientation of a flip-chip packaged die makes it vulnerable to optical attacks from the backside. This article discusses the nature of that vulnerability, assesses the threats posed by optical inspection tools and techniques, and provides insights on effective countermeasures.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131767974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-05-01DOI: 10.31399/asm.edfa.2021-2.p051
Ted Kolasa
This column addresses the different perspectives of providers and customers of semiconductor failure analysis laboratories. The columnist, after having seen both sides of the electronics industry, as a supplier and customer, sheds light on how the two sides interact when entangled with reliability issues and failures.
{"title":"Failure Analysis from a Customer Point of View","authors":"Ted Kolasa","doi":"10.31399/asm.edfa.2021-2.p051","DOIUrl":"https://doi.org/10.31399/asm.edfa.2021-2.p051","url":null,"abstract":"\u0000 This column addresses the different perspectives of providers and customers of semiconductor failure analysis laboratories. The columnist, after having seen both sides of the electronics industry, as a supplier and customer, sheds light on how the two sides interact when entangled with reliability issues and failures.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122449974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-05-01DOI: 10.31399/asm.edfa.2021-2.p038
Travis Mitchell, Brian Popielarski, Frieder Baumann
This Master FA Technique column describes an easy and inexpensive solution to the problem of preparing TEM cross-sectional samples from etched wafers with large aspect ratio vias.
{"title":"Master FA Technique: Artifact-Free Cross Sectioning of High Aspect Ratio Etch Cavities Using Ink","authors":"Travis Mitchell, Brian Popielarski, Frieder Baumann","doi":"10.31399/asm.edfa.2021-2.p038","DOIUrl":"https://doi.org/10.31399/asm.edfa.2021-2.p038","url":null,"abstract":"\u0000 This Master FA Technique column describes an easy and inexpensive solution to the problem of preparing TEM cross-sectional samples from etched wafers with large aspect ratio vias.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128611251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-05-01DOI: 10.31399/asm.edfa.2021-2.p013
M. Holler, M. Guizar‐Sicairos, J. Raabe
X-ray ptychography, as recent studies show, has the potential to bridge the gap that currently exists between conventional X-ray imaging and electron microscopy. This article covers the evolution of the technology from basic 2D imaging to computed tomography to 3D ptychographic X-ray laminography (PyXL) with zoom. To demonstrate the capabilities of PyXL, a 16-nm FinFET logic IC was mechanically polished to a thickness of 20 µm and several regions were imaged at various levels of resolution.
{"title":"State-of-the-Art High-Resolution 3D X-ray Microscopy for Imaging of Integrated Circuits","authors":"M. Holler, M. Guizar‐Sicairos, J. Raabe","doi":"10.31399/asm.edfa.2021-2.p013","DOIUrl":"https://doi.org/10.31399/asm.edfa.2021-2.p013","url":null,"abstract":"\u0000 X-ray ptychography, as recent studies show, has the potential to bridge the gap that currently exists between conventional X-ray imaging and electron microscopy. This article covers the evolution of the technology from basic 2D imaging to computed tomography to 3D ptychographic X-ray laminography (PyXL) with zoom. To demonstrate the capabilities of PyXL, a 16-nm FinFET logic IC was mechanically polished to a thickness of 20 µm and several regions were imaged at various levels of resolution.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115206551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-05-01DOI: 10.31399/asm.edfa.2021-2.p033
Tejinder Gandhi, Anita Madan, Ted Kolasa
This article provides a recap and summaries of the EDFAS Virtual User Group Workshop held in January 2021. The summaries cover key participants, presentation topics, and discussion highlights from the Focused Ion Beam, Sample Preparation, Contactless Probing and Nanoprobing, and System on Package virtual group meetings.
{"title":"EDFAS User Groups Series 2021 Highlights","authors":"Tejinder Gandhi, Anita Madan, Ted Kolasa","doi":"10.31399/asm.edfa.2021-2.p033","DOIUrl":"https://doi.org/10.31399/asm.edfa.2021-2.p033","url":null,"abstract":"\u0000 This article provides a recap and summaries of the EDFAS Virtual User Group Workshop held in January 2021. The summaries cover key participants, presentation topics, and discussion highlights from the Focused Ion Beam, Sample Preparation, Contactless Probing and Nanoprobing, and System on Package virtual group meetings.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130950142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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