Pub Date : 2020-02-01DOI: 10.31399/asm.edfa.2020-1.p014
P. S. Pichumani, F. Khatkhatay
In this article, the authors evaluate micro CNC milling as an alternative to manual parallel lapping for mechanical cross-sectioning of flip-chip packaged samples. They describe both processes, and how they compare to other cross-sectioning techniques, and clearly illustrate the differences. SEM images of a manually polished sample show process-induced cracking, chipping, and delamination at the die-C4 interface. In contrast, the CNC-milled sample is artifact-free and the C4 bumps are uniformly exposed along the entire length of the cross-section.
{"title":"Mechanical Milling and Polishing of Cross Sections using a Micro CNC Machine for Failure Analysis","authors":"P. S. Pichumani, F. Khatkhatay","doi":"10.31399/asm.edfa.2020-1.p014","DOIUrl":"https://doi.org/10.31399/asm.edfa.2020-1.p014","url":null,"abstract":"\u0000 In this article, the authors evaluate micro CNC milling as an alternative to manual parallel lapping for mechanical cross-sectioning of flip-chip packaged samples. They describe both processes, and how they compare to other cross-sectioning techniques, and clearly illustrate the differences. SEM images of a manually polished sample show process-induced cracking, chipping, and delamination at the die-C4 interface. In contrast, the CNC-milled sample is artifact-free and the C4 bumps are uniformly exposed along the entire length of the cross-section.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131509364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-02-01DOI: 10.31399/asm.edfa.2020-1.p020
X. Wang
Scanning probe microscopy (SPM) is widely used for fault isolation as well as diagnosing leakage current, detecting open circuits, and characterizing doping related defects. In this article, the author presents two SPM applications that are fairly uncommon but no less important in the scope of failure analysis. The first case involves the discovery of nano-steps on the surface of high-voltage NFETs, a phenomenon associated with stress-induced crystalline shift along the (111) silicon plane. In the second case, the author uses an AFM probe in the conductive mode to correlate tunneling current distribution with hot spots in high-k gate oxide films, which is shown to be a better indicator of oxide quality than rms surface roughness.
{"title":"Scanning Probe Microscopy Applications in Failure Analysis of Semiconductor Devices","authors":"X. Wang","doi":"10.31399/asm.edfa.2020-1.p020","DOIUrl":"https://doi.org/10.31399/asm.edfa.2020-1.p020","url":null,"abstract":"\u0000 Scanning probe microscopy (SPM) is widely used for fault isolation as well as diagnosing leakage current, detecting open circuits, and characterizing doping related defects. In this article, the author presents two SPM applications that are fairly uncommon but no less important in the scope of failure analysis. The first case involves the discovery of nano-steps on the surface of high-voltage NFETs, a phenomenon associated with stress-induced crystalline shift along the (111) silicon plane. In the second case, the author uses an AFM probe in the conductive mode to correlate tunneling current distribution with hot spots in high-k gate oxide films, which is shown to be a better indicator of oxide quality than rms surface roughness.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129439037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-11-01DOI: 10.31399/asm.edfa.2019-4.p022
William Courbat, J. Jatzkowski
A recent trend in semiconductor failure analysis involves combining the use of different tools and techniques in order to acquire more accurate data at a faster rate. This article describes a new workflow that combines FIB, GIS, and nanoprobing, all performed at the same FIB tilt position. It also provides two examples in which the workflow is used.
{"title":"Faster and More Accurate Failure Analysis: Circuit Editing and Short Localization Performed at Same Tilt Angle using Multiple Techniques","authors":"William Courbat, J. Jatzkowski","doi":"10.31399/asm.edfa.2019-4.p022","DOIUrl":"https://doi.org/10.31399/asm.edfa.2019-4.p022","url":null,"abstract":"\u0000 A recent trend in semiconductor failure analysis involves combining the use of different tools and techniques in order to acquire more accurate data at a faster rate. This article describes a new workflow that combines FIB, GIS, and nanoprobing, all performed at the same FIB tilt position. It also provides two examples in which the workflow is used.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115707141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-11-01DOI: 10.31399/asm.edfa.2019-4.p030
X. Wan
This article discusses the effect of hot carrier injection, bias temperature instability, and time-dependent dielectric breakdown on FinFET performance and reliability.
本文讨论了热载流子注入、偏置温度不稳定性和随时间介电击穿对FinFET性能和可靠性的影响。
{"title":"Device Reliability Challenges in Advanced FinFET Technology","authors":"X. Wan","doi":"10.31399/asm.edfa.2019-4.p030","DOIUrl":"https://doi.org/10.31399/asm.edfa.2019-4.p030","url":null,"abstract":"\u0000 This article discusses the effect of hot carrier injection, bias temperature instability, and time-dependent dielectric breakdown on FinFET performance and reliability.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128583411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-11-01DOI: 10.31399/asm.edfa.2019-4.p014
P. Jacob
Using the example of smart card radio frequency identification (RFID) devices, this article examines electrostatic discharge risk scenarios encountered during assembly and in the field, and outlines basic countermeasures.
{"title":"ESD Challenges on RFID Devices","authors":"P. Jacob","doi":"10.31399/asm.edfa.2019-4.p014","DOIUrl":"https://doi.org/10.31399/asm.edfa.2019-4.p014","url":null,"abstract":"\u0000 Using the example of smart card radio frequency identification (RFID) devices, this article examines electrostatic discharge risk scenarios encountered during assembly and in the field, and outlines basic countermeasures.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122420572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-11-01DOI: 10.31399/asm.edfa.2019-4.p060
E. Principe
This column discusses the potential benefits of developing a dedicated synchrotron-based tool suite for advanced, high-throughput characterization, deprocessing, and validation of ICs.
{"title":"A Dedicated Synchrotron Beamline Suite for Enhanced Validation of Integrated Circuits","authors":"E. Principe","doi":"10.31399/asm.edfa.2019-4.p060","DOIUrl":"https://doi.org/10.31399/asm.edfa.2019-4.p060","url":null,"abstract":"\u0000 This column discusses the potential benefits of developing a dedicated synchrotron-based tool suite for advanced, high-throughput characterization, deprocessing, and validation of ICs.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124756407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-11-01DOI: 10.31399/asm.edfa.2019-4.p004
C. Bonifacio, M. Campin, K. Mcilwrath, P. Fischione
TEM specimens prepared using a Ga FIB are susceptible to artifacts, such as surface amorphization and ion-implanted layers, that can be problematic in advanced technology nodes, particularly for FinFETs. As this article shows, however, post-FIB cleaning via concentrated argon ion milling makes for a fast and effective specimen preparation process for FinFET devices controlled to a thickness of less than 20 nm. Although the results presented here are based on 14 nm node FinFETs, the method is also applicable to the 10 and 7 nm FinFET technologies currently in production.
{"title":"Post-FIB Cleaning of TEM Specimens from 14 nm and Other FinFETs by Concentrated Argon Ion Milling","authors":"C. Bonifacio, M. Campin, K. Mcilwrath, P. Fischione","doi":"10.31399/asm.edfa.2019-4.p004","DOIUrl":"https://doi.org/10.31399/asm.edfa.2019-4.p004","url":null,"abstract":"\u0000 TEM specimens prepared using a Ga FIB are susceptible to artifacts, such as surface amorphization and ion-implanted layers, that can be problematic in advanced technology nodes, particularly for FinFETs. As this article shows, however, post-FIB cleaning via concentrated argon ion milling makes for a fast and effective specimen preparation process for FinFET devices controlled to a thickness of less than 20 nm. Although the results presented here are based on 14 nm node FinFETs, the method is also applicable to the 10 and 7 nm FinFET technologies currently in production.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128241900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.31399/asm.edfa.2019-3.p026
F. Baumann
Transmission electron microscopes have been improved in various ways over the past two decades, giving rise to new characterization techniques. Among the innovations discussed in this article are the introduction of field emission guns, the incorporation of CCD cameras and X-ray detectors, and the use of lens correction systems. Such improvements have had a significant impact on failure analysis through the emergence of new TEM techniques, including precession electron diffraction for grain and strain analysis, noise reduction processing for low dose EELS mapping of ultra-low-k materials, and EDX tomography for elemental 3D imaging of defects on a nanometer scale.
{"title":"Recent Advances in VLSI Characterization using the TEM","authors":"F. Baumann","doi":"10.31399/asm.edfa.2019-3.p026","DOIUrl":"https://doi.org/10.31399/asm.edfa.2019-3.p026","url":null,"abstract":"\u0000 Transmission electron microscopes have been improved in various ways over the past two decades, giving rise to new characterization techniques. Among the innovations discussed in this article are the introduction of field emission guns, the incorporation of CCD cameras and X-ray detectors, and the use of lens correction systems. Such improvements have had a significant impact on failure analysis through the emergence of new TEM techniques, including precession electron diffraction for grain and strain analysis, noise reduction processing for low dose EELS mapping of ultra-low-k materials, and EDX tomography for elemental 3D imaging of defects on a nanometer scale.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123504933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.31399/asm.edfa.2019-3.p008
E.I. Principe, Z.E. Russell, S. DiDona, M. Therezien, B. Kempshall, K.E. Scammon, J. J. Hagen
This article discusses the current state of large area integrated circuit deprocessing, the latest achievements in the development of automated deprocessing equipment, and the potential impact of advancements in gas-assisted etching, ion source alternatives, compact spectroscopy, and high-speed lasers.
{"title":"Large Area Automated Deprocessing of Integrated Circuits: Present and Future","authors":"E.I. Principe, Z.E. Russell, S. DiDona, M. Therezien, B. Kempshall, K.E. Scammon, J. J. Hagen","doi":"10.31399/asm.edfa.2019-3.p008","DOIUrl":"https://doi.org/10.31399/asm.edfa.2019-3.p008","url":null,"abstract":"\u0000 This article discusses the current state of large area integrated circuit deprocessing, the latest achievements in the development of automated deprocessing equipment, and the potential impact of advancements in gas-assisted etching, ion source alternatives, compact spectroscopy, and high-speed lasers.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132987398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.31399/asm.edfa.2019-3.p016
M. Tanjidur Rahman, N. Asadizanjani
This article presents a comprehensive study of physical inspection and attack methods, describing the approaches typically used by counterfeiters and adversaries as well as the risks and threats created. It also explains how physical inspection methods can serve as trust verification tools and provides practical guidelines for making hardware more secure.
{"title":"Failure Analysis for Hardware Assurance and Security","authors":"M. Tanjidur Rahman, N. Asadizanjani","doi":"10.31399/asm.edfa.2019-3.p016","DOIUrl":"https://doi.org/10.31399/asm.edfa.2019-3.p016","url":null,"abstract":"\u0000 This article presents a comprehensive study of physical inspection and attack methods, describing the approaches typically used by counterfeiters and adversaries as well as the risks and threats created. It also explains how physical inspection methods can serve as trust verification tools and provides practical guidelines for making hardware more secure.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131646740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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