Pub Date : 2023-02-01DOI: 10.31399/asm.edfa.2023-1.p016
Kirk A. Martin
Abstract The processes and considerations for locally thinning an area of interest to the desired remaining silicon thickness are described.
描述了局部减薄感兴趣的区域以期望剩余硅厚度的过程和考虑因素。
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Pub Date : 2023-02-01DOI: 10.31399/asm.edfa.2023-1.p009
N. Antoniou
Scanning microwave impedance microscopy is a nearfield technique using microwaves to probe the electrical properties of materials with nanoscale lateral resolution.
扫描微波阻抗显微镜是一种利用微波以纳米级横向分辨率探测材料电性能的近场技术。
{"title":"Scanning Microwave Impedance Microscopy: Overview and Low Temperature Operation","authors":"N. Antoniou","doi":"10.31399/asm.edfa.2023-1.p009","DOIUrl":"https://doi.org/10.31399/asm.edfa.2023-1.p009","url":null,"abstract":"\u0000 Scanning microwave impedance microscopy is a nearfield technique using microwaves to probe the electrical properties of materials with nanoscale lateral resolution.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129511915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-02-01DOI: 10.31399/asm.edfa.2023-1.p020
C. Hartfield
This is the story of how the mainstream Omniprobe FIB lift-out solution was invented and delivered to the market.
这是主流的Omniprobe FIB提出解决方案是如何被发明并交付给市场的故事。
{"title":"Transforming an Industry: An Inventor’s Tale of FIB In Situ Lift-Out","authors":"C. Hartfield","doi":"10.31399/asm.edfa.2023-1.p020","DOIUrl":"https://doi.org/10.31399/asm.edfa.2023-1.p020","url":null,"abstract":"\u0000 This is the story of how the mainstream Omniprobe FIB lift-out solution was invented and delivered to the market.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132688068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-01DOI: 10.31399/asm.edfa.2022-4.p012
Anvesh Perumalla, J. Emmert
This article describes a hardware metering fingerprint technique, called the memometer, that addresses supply chain integrity issues with field-programmable gate arrays (FPGAs). The memometer is a physically unclonable function (PUF) based on cross-coupled lookup tables that overcomes manufacturing memory power-on preset. The fingerprints are not only unique, but also reliable with average hamming distances close to the ideal values of 50% (interchip) and 0% (intrachip). Instead of having one fingerprint per device, the memometer makes provision for hundreds with the potential for more.
{"title":"Memometer: Memory PUF-based Hardware Metering Methodology for FPGAs","authors":"Anvesh Perumalla, J. Emmert","doi":"10.31399/asm.edfa.2022-4.p012","DOIUrl":"https://doi.org/10.31399/asm.edfa.2022-4.p012","url":null,"abstract":"\u0000 This article describes a hardware metering fingerprint technique, called the memometer, that addresses supply chain integrity issues with field-programmable gate arrays (FPGAs). The memometer is a physically unclonable function (PUF) based on cross-coupled lookup tables that overcomes manufacturing memory power-on preset. The fingerprints are not only unique, but also reliable with average hamming distances close to the ideal values of 50% (interchip) and 0% (intrachip). Instead of having one fingerprint per device, the memometer makes provision for hundreds with the potential for more.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122405869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-01DOI: 10.31399/asm.edfa.2022-4.p058
K. Serrels
This column describes the structure and process being followed by the councils working on the Failure Analysis Technology Roadmap at the direction of the EDFAS Board. The FA Roadmap activity was recently restructured to establish three Councils: Die-Level Roadmap Council (DLRC), Package Innovation Roadmap Council (PIRC), and an FA Future Roadmap Council (FAFRC). To incorporate a common FA workflow, the DLRC will host two separate domain teams: Isolation and Post-Isolation Domain. The column describes the FA Roadmap work conducted at the ISTFA 2022 Conference and activities planned for 2023.
{"title":"The EDFAS FA Technology Roadmap—Foundation and Future","authors":"K. Serrels","doi":"10.31399/asm.edfa.2022-4.p058","DOIUrl":"https://doi.org/10.31399/asm.edfa.2022-4.p058","url":null,"abstract":"\u0000 This column describes the structure and process being followed by the councils working on the Failure Analysis Technology Roadmap at the direction of the EDFAS Board. The FA Roadmap activity was recently restructured to establish three Councils: Die-Level Roadmap Council (DLRC), Package Innovation Roadmap Council (PIRC), and an FA Future Roadmap Council (FAFRC). To incorporate a common FA workflow, the DLRC will host two separate domain teams: Isolation and Post-Isolation Domain. The column describes the FA Roadmap work conducted at the ISTFA 2022 Conference and activities planned for 2023.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114212935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-01DOI: 10.31399/asm.edfa.2022-4.p022
L. K. Biswas, M. Khan, L. Lavdas, N. Asadizanjani
This article describes how physical attacks can be launched on different types of nonvolatile memory (NVM) cells using failure analysis tools. It explains how the bit information stored inside these devices is susceptible to read-out and fault injection attacks and defines vulnerability parameters to help quantify risks associated with different modalities of attack. It also presents an in-depth security analysis of emerging NVM technologies and discusses potential countermeasures.
{"title":"Security Assessment of Nonvolatile Memory Against Physical Probing","authors":"L. K. Biswas, M. Khan, L. Lavdas, N. Asadizanjani","doi":"10.31399/asm.edfa.2022-4.p022","DOIUrl":"https://doi.org/10.31399/asm.edfa.2022-4.p022","url":null,"abstract":"\u0000 This article describes how physical attacks can be launched on different types of nonvolatile memory (NVM) cells using failure analysis tools. It explains how the bit information stored inside these devices is susceptible to read-out and fault injection attacks and defines vulnerability parameters to help quantify risks associated with different modalities of attack. It also presents an in-depth security analysis of emerging NVM technologies and discusses potential countermeasures.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127843128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-01DOI: 10.31399/asm.edfa.2022-4.p034
Kirk A. Martin
This article, the first in a multi-part series, describes how to finely control remaining silicon thickness (RST) through the correction of mechanical surface profiles using multipoint thickness measurements. It explains why multipoint thickness measurements are necessary and discusses the realities of silicon thickness measurements. With careful processing, cleaning, and RST measurements, samples can be reliably processed to a 50 μm thickness with a variation of +/- 2.5 μm across the majority of the die.
{"title":"Processes for Thinning and Polishing Highly Warped Die to a Nearly Consistent Thickness: Part I","authors":"Kirk A. Martin","doi":"10.31399/asm.edfa.2022-4.p034","DOIUrl":"https://doi.org/10.31399/asm.edfa.2022-4.p034","url":null,"abstract":"\u0000 This article, the first in a multi-part series, describes how to finely control remaining silicon thickness (RST) through the correction of mechanical surface profiles using multipoint thickness measurements. It explains why multipoint thickness measurements are necessary and discusses the realities of silicon thickness measurements. With careful processing, cleaning, and RST measurements, samples can be reliably processed to a 50 μm thickness with a variation of +/- 2.5 μm across the majority of the die.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125833762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-01DOI: 10.31399/asm.edfa.2022-4.p004
N. Herfurth, C. Boit
This article presents and evaluates a calibration method that significantly improves the spectral information that can be extracted from photon emission signals obtained from semiconductor devices. Step-by-step instructions are given for calibrating photon emission microscopes for specific measurements such as device parameters and material band gap. The article also discusses the types of errors that can occur during calibration. Although the procedure presented is used on InGaAs sensors, it applies to all common photon emission detectors.
{"title":"A Guide to Accurate System Calibration and Data Extraction to Increase Significance of Spectral Photon Emission Microscopy Measurements","authors":"N. Herfurth, C. Boit","doi":"10.31399/asm.edfa.2022-4.p004","DOIUrl":"https://doi.org/10.31399/asm.edfa.2022-4.p004","url":null,"abstract":"\u0000 This article presents and evaluates a calibration method that significantly improves the spectral information that can be extracted from photon emission signals obtained from semiconductor devices. Step-by-step instructions are given for calibrating photon emission microscopes for specific measurements such as device parameters and material band gap. The article also discusses the types of errors that can occur during calibration. Although the procedure presented is used on InGaAs sensors, it applies to all common photon emission detectors.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123034468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-08-01DOI: 10.31399/asm.edfa.2022-3.p012
Md. Mahfuz Al Hasan, Md. Tahsin Mostafiz, N. Asadizanjani
This article proposes a design for a real-time Trojan detection system and explores possible solutions to the challenge of large-scale SEM image acquisition. One such solution, a deep-learning approach that generates synthetic micrographs from layout images, shows significant promise. Learning-based approaches are also used to both synthesize and classify cells. The classification outcome is matched with the design exchange format file entry to ensure the purity of the underlying IC.
{"title":"Supervised Feature Extraction and Synthesis of Integrated Circuits Micrographs for Physical Assurance","authors":"Md. Mahfuz Al Hasan, Md. Tahsin Mostafiz, N. Asadizanjani","doi":"10.31399/asm.edfa.2022-3.p012","DOIUrl":"https://doi.org/10.31399/asm.edfa.2022-3.p012","url":null,"abstract":"\u0000 This article proposes a design for a real-time Trojan detection system and explores possible solutions to the challenge of large-scale SEM image acquisition. One such solution, a deep-learning approach that generates synthetic micrographs from layout images, shows significant promise. Learning-based approaches are also used to both synthesize and classify cells. The classification outcome is matched with the design exchange format file entry to ensure the purity of the underlying IC.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128206770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-08-01DOI: 10.31399/asm.edfa.2022-3.p055
Steven B. Herschbein
This month’s guest columnist explains how some of the things he learned while building a new fab line helped him when he returned to the lab and assumed responsibility for buying and installing tools and ensuring their effective use.
{"title":"Plan Well in Advance to Ensure Your Lab Meets High-Resolution Tool Requirements","authors":"Steven B. Herschbein","doi":"10.31399/asm.edfa.2022-3.p055","DOIUrl":"https://doi.org/10.31399/asm.edfa.2022-3.p055","url":null,"abstract":"\u0000 This month’s guest columnist explains how some of the things he learned while building a new fab line helped him when he returned to the lab and assumed responsibility for buying and installing tools and ensuring their effective use.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122813364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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