Pub Date : 2005-10-23DOI: 10.1109/POLYTR.2005.1596514
L. Ekstrand, Z. Mo, Yan Zhang, J. Liu
One potential solution to meet the increased demands of cooling in electronics is microchannels inside or on the inactive side of the chip with a fluid that carries away the heat. In this work Carbon Nanotubes (CNT) was used to further enhance cooling efficiency. Based on the promising result from experimental work on this kind of micro channels, finite element method, (FEMlab), was used to investigate the heat sink behaviour in detail. By introducing CNTs into the channel the heat transfer was enhanced. The thermal resistance of the micro channel was reduced from 0.98 K/W to about 0.43 K/W when fins were used. This is probably due to the fact that vortexes are introduced in the flow giving better mixing and that the contact area between water and hot surface is enlarged. However, the pressure drop of the channel with fins is high but could be reduced by an alternative design.
{"title":"Modelling of Carbon Nanotubes as Heat Sink Fins in Microchannels for Microelectronics Cooling","authors":"L. Ekstrand, Z. Mo, Yan Zhang, J. Liu","doi":"10.1109/POLYTR.2005.1596514","DOIUrl":"https://doi.org/10.1109/POLYTR.2005.1596514","url":null,"abstract":"One potential solution to meet the increased demands of cooling in electronics is microchannels inside or on the inactive side of the chip with a fluid that carries away the heat. In this work Carbon Nanotubes (CNT) was used to further enhance cooling efficiency. Based on the promising result from experimental work on this kind of micro channels, finite element method, (FEMlab), was used to investigate the heat sink behaviour in detail. By introducing CNTs into the channel the heat transfer was enhanced. The thermal resistance of the micro channel was reduced from 0.98 K/W to about 0.43 K/W when fins were used. This is probably due to the fact that vortexes are introduced in the flow giving better mixing and that the contact area between water and hot surface is enlarged. However, the pressure drop of the channel with fins is high but could be reduced by an alternative design.","PeriodicalId":436133,"journal":{"name":"Polytronic 2005 - 5th International Conference on Polymers and Adhesives in Microelectronics and Photonics","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126954092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-10-23DOI: 10.1109/POLYTR.2005.1596510
S. Gillissen, E. Nelis, G. van Wuytswinkel, M. de Pater, Chih-Min Cheng, V. Buffa, W. O'hara, B. Xia, Jayesh Shah
A break-through adhesive chemistry has been developed that achieves cure in seconds at temperatures below 110°C. These adhesives enable low cost RFID tag construction with low temperature substrates at extremely high assembly speed. Assemblies that require electrically conductive or non-conductive adhesives can benefit from this innovation. The cure speed of isotropic conductive paste (ICP) adhesive is demonstrated by measuring dynamic conductivity development during the heating process. Rheological stability at room temperature persists for days. The impact of rheological behavior on high speed processing is discussed. Silver ink based antenna and simulated die strap are used as test vehicles for processing and reliability tests. The integrity of the assembly is shown using a mandrel bend test to simulate downstream processing such as converting and printing. Together with a proprietary thermal radiation cure method, assembly speeds up to 300 feet/minute are achievable. The electrical stability of these bend-tested tags were evaluated in air to air thermal shock (-40°C to 80°C) and 85°C/85%RH conditions and found to be stable. The reliability results are presented and the challenge of high speed reel-to-reel processing are also discussed based on an isotropic conductive adhesive approach. This paper discusses these results and presents an adhesive technology that enables low cost RFID tag assembly.
{"title":"Low temperature snap cure thermoset adhesives with good worklife","authors":"S. Gillissen, E. Nelis, G. van Wuytswinkel, M. de Pater, Chih-Min Cheng, V. Buffa, W. O'hara, B. Xia, Jayesh Shah","doi":"10.1109/POLYTR.2005.1596510","DOIUrl":"https://doi.org/10.1109/POLYTR.2005.1596510","url":null,"abstract":"A break-through adhesive chemistry has been developed that achieves cure in seconds at temperatures below 110°C. These adhesives enable low cost RFID tag construction with low temperature substrates at extremely high assembly speed. Assemblies that require electrically conductive or non-conductive adhesives can benefit from this innovation. The cure speed of isotropic conductive paste (ICP) adhesive is demonstrated by measuring dynamic conductivity development during the heating process. Rheological stability at room temperature persists for days. The impact of rheological behavior on high speed processing is discussed. Silver ink based antenna and simulated die strap are used as test vehicles for processing and reliability tests. The integrity of the assembly is shown using a mandrel bend test to simulate downstream processing such as converting and printing. Together with a proprietary thermal radiation cure method, assembly speeds up to 300 feet/minute are achievable. The electrical stability of these bend-tested tags were evaluated in air to air thermal shock (-40°C to 80°C) and 85°C/85%RH conditions and found to be stable. The reliability results are presented and the challenge of high speed reel-to-reel processing are also discussed based on an isotropic conductive adhesive approach. This paper discusses these results and presents an adhesive technology that enables low cost RFID tag assembly.","PeriodicalId":436133,"journal":{"name":"Polytronic 2005 - 5th International Conference on Polymers and Adhesives in Microelectronics and Photonics","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130081847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-10-23DOI: 10.1109/POLYTR.2005.1596525
K. Bock
Current trends in the development of electronics systems show, that the provision of thin flexible components and semiconductors plays a decisive role in the steadily progressing development of highly integrated systems. A new generation of thin flexible electronic systems arises. At present, this world is very much dominated by inorganic active materials, in particular thin flexible silicon integrated circuits, but new functionality based on conductive and semi-conductive plastic materials is developing fast. Freedom of design, compact portable products, cost-effective production and assembly, environment friendly materials, software based printed ICs, flexible polymer transistors and thin flexible silicon ICS-there are unquestionable advantages of flexible electronics. Microsystems incorporating fluidic, mechanical, optical and electrical components are under research and development at present. A new word, "polytronics" (polymer+electronics) has appeared in electronic vocabulary as a short name of this quickly developed technology. This paper aims to present an overview of these technologies.
{"title":"Organic Electronics - Towards a Cost-Efficient Heterointegration Platform for Multi-Functional Systems?","authors":"K. Bock","doi":"10.1109/POLYTR.2005.1596525","DOIUrl":"https://doi.org/10.1109/POLYTR.2005.1596525","url":null,"abstract":"Current trends in the development of electronics systems show, that the provision of thin flexible components and semiconductors plays a decisive role in the steadily progressing development of highly integrated systems. A new generation of thin flexible electronic systems arises. At present, this world is very much dominated by inorganic active materials, in particular thin flexible silicon integrated circuits, but new functionality based on conductive and semi-conductive plastic materials is developing fast. Freedom of design, compact portable products, cost-effective production and assembly, environment friendly materials, software based printed ICs, flexible polymer transistors and thin flexible silicon ICS-there are unquestionable advantages of flexible electronics. Microsystems incorporating fluidic, mechanical, optical and electrical components are under research and development at present. A new word, \"polytronics\" (polymer+electronics) has appeared in electronic vocabulary as a short name of this quickly developed technology. This paper aims to present an overview of these technologies.","PeriodicalId":436133,"journal":{"name":"Polytronic 2005 - 5th International Conference on Polymers and Adhesives in Microelectronics and Photonics","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125584358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-10-23DOI: 10.1109/POLYTR.2005.1596507
L. Beckers, E. Schiepers, M. Raes, M. Smeets, A. van der Lugt
A 4-wire resistance measurement method is used to evaluate the contact resistance of Chip On Glass (COG) bonding using Anisotropic Conductive Film (ACF) to prevent the need of compensation for series resistance of the ITO tracks. A comparison is made between the 4-wire measuring method and a Daisy chain measuring method. In the Daisy chain design the ITO tracks are metalized except for the contact area. The results show a very large difference between these measuring methods. To understand this difference, simulations are done, showing a systematic error in the 4-wire measuring method. Extending the measurements and simulations from ITO to metal tracks covered with ITO, using the same contact resistance for a single ACF particle show for the 4-wire measuring method as for the Daisy chain measuring method a perfect fit. The simulations also resulted in a reliable value for the contact resistance for a single ACF particle.
{"title":"Contact resistance measurement for Au bumped IC to ITO on glass for LCD's","authors":"L. Beckers, E. Schiepers, M. Raes, M. Smeets, A. van der Lugt","doi":"10.1109/POLYTR.2005.1596507","DOIUrl":"https://doi.org/10.1109/POLYTR.2005.1596507","url":null,"abstract":"A 4-wire resistance measurement method is used to evaluate the contact resistance of Chip On Glass (COG) bonding using Anisotropic Conductive Film (ACF) to prevent the need of compensation for series resistance of the ITO tracks. A comparison is made between the 4-wire measuring method and a Daisy chain measuring method. In the Daisy chain design the ITO tracks are metalized except for the contact area. The results show a very large difference between these measuring methods. To understand this difference, simulations are done, showing a systematic error in the 4-wire measuring method. Extending the measurements and simulations from ITO to metal tracks covered with ITO, using the same contact resistance for a single ACF particle show for the 4-wire measuring method as for the Daisy chain measuring method a perfect fit. The simulations also resulted in a reliable value for the contact resistance for a single ACF particle.","PeriodicalId":436133,"journal":{"name":"Polytronic 2005 - 5th International Conference on Polymers and Adhesives in Microelectronics and Photonics","volume":"40 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120920511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-10-23DOI: 10.1109/POLYTR.2005.1596490
S. Janietz, D. Sainova, U. Asawapirom
Here we present a concept to improve the field effect transistor performance of P3HT in terms of threshold voltage stability as well as the stability in ambient atmosphere by introducing a strong acceptor dopant in the main polymer chain. In our concept the direct introduction of the acceptor dopant in the polymer main chain ensures the strucural stability against diffusion processes. P3HTs with different contents of acceptor molecules which are fixed linked in the main chain of the polymer, have been synthesized using the McCullough Grignard metathesis method. As acceptor unit has been integrated tetrafluorbenzene (TFB). The introduced dopant amount has been varied in order to obtain an optimum between the processability of the polymers and the resultant transistor performance. Compared to the p-type semionducting polymers the n-type organic materials are markedly less developed. Recently an interesting solution to this task has been proposed in the form of a conjugated ladder-type poly(benzo-bisimidazobenzo-phenanthroline) (BBL) showing either ambipolar or n-type field effect properties dependent upon the sample preparation and processing. However this rigid-chain ladder polymer is not soluble in the common organic solvents resulting in a rather complicated technological transfer. We report the significant improvement of the BBL-processing utilizing aqueous colloidal dispersions and their OFET-application. The resultant devices demonstrate ambipolar electronic transport with charge carrier mobilities in the range of 10-5cm2/Vs without specific optimization procedures.
{"title":"Development of Active Functional Polymers for p- and n-type OFET- Applications","authors":"S. Janietz, D. Sainova, U. Asawapirom","doi":"10.1109/POLYTR.2005.1596490","DOIUrl":"https://doi.org/10.1109/POLYTR.2005.1596490","url":null,"abstract":"Here we present a concept to improve the field effect transistor performance of P3HT in terms of threshold voltage stability as well as the stability in ambient atmosphere by introducing a strong acceptor dopant in the main polymer chain. In our concept the direct introduction of the acceptor dopant in the polymer main chain ensures the strucural stability against diffusion processes. P3HTs with different contents of acceptor molecules which are fixed linked in the main chain of the polymer, have been synthesized using the McCullough Grignard metathesis method. As acceptor unit has been integrated tetrafluorbenzene (TFB). The introduced dopant amount has been varied in order to obtain an optimum between the processability of the polymers and the resultant transistor performance. Compared to the p-type semionducting polymers the n-type organic materials are markedly less developed. Recently an interesting solution to this task has been proposed in the form of a conjugated ladder-type poly(benzo-bisimidazobenzo-phenanthroline) (BBL) showing either ambipolar or n-type field effect properties dependent upon the sample preparation and processing. However this rigid-chain ladder polymer is not soluble in the common organic solvents resulting in a rather complicated technological transfer. We report the significant improvement of the BBL-processing utilizing aqueous colloidal dispersions and their OFET-application. The resultant devices demonstrate ambipolar electronic transport with charge carrier mobilities in the range of 10-5cm2/Vs without specific optimization procedures.","PeriodicalId":436133,"journal":{"name":"Polytronic 2005 - 5th International Conference on Polymers and Adhesives in Microelectronics and Photonics","volume":"131 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122747267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-10-23DOI: 10.1109/POLYTR.2005.1596487
Z. Zhong, Z. Wang, B. Zirajutheen, Y. Tan, Y. Tan
Polymers such as PC (polycarbonate), PMMA (poly methyl methacryate) and SU-8 epoxy resin are replacing silicon as the major substrate in microfluidic system (or BioMEMS) fabrication. Chemical mechanical polishing (CMP) is an important technology for many advanced microelectromechanical system (MEMS) and micro-optoelectromechanical system applications. In this study, CMP of PC, PMMA and SU-8 polymers was investigated. Four types of slurry were tested for CMP of PC and PMMA. Experiments were then designed and performed to investigate effects of two key process parameters. The experimental results show that an increase in head load or table speed would cause an increase in material removal rates (MRRs). Within the chosen experimental parameter ranges, the variation of table speed introduced a more significant change in MRRs than that of head load. ANOVA was also carried out, and it was found that the interaction of head load and table speed had a significant (95% confidence) effect on surface finish of polished PMMA samples while table speed had a significant effect on surface finish of polished PC samples. CMP is also a process well suited for polishing high-aspect-ratio SU-8 structures. Polished PC, PMMA and SU-8 surfaces had nanometer-order surface roughness, acceptable to most MEMS applications.
{"title":"CMP of PC, PMMA and SU-8 Polymers","authors":"Z. Zhong, Z. Wang, B. Zirajutheen, Y. Tan, Y. Tan","doi":"10.1109/POLYTR.2005.1596487","DOIUrl":"https://doi.org/10.1109/POLYTR.2005.1596487","url":null,"abstract":"Polymers such as PC (polycarbonate), PMMA (poly methyl methacryate) and SU-8 epoxy resin are replacing silicon as the major substrate in microfluidic system (or BioMEMS) fabrication. Chemical mechanical polishing (CMP) is an important technology for many advanced microelectromechanical system (MEMS) and micro-optoelectromechanical system applications. In this study, CMP of PC, PMMA and SU-8 polymers was investigated. Four types of slurry were tested for CMP of PC and PMMA. Experiments were then designed and performed to investigate effects of two key process parameters. The experimental results show that an increase in head load or table speed would cause an increase in material removal rates (MRRs). Within the chosen experimental parameter ranges, the variation of table speed introduced a more significant change in MRRs than that of head load. ANOVA was also carried out, and it was found that the interaction of head load and table speed had a significant (95% confidence) effect on surface finish of polished PMMA samples while table speed had a significant effect on surface finish of polished PC samples. CMP is also a process well suited for polishing high-aspect-ratio SU-8 structures. Polished PC, PMMA and SU-8 surfaces had nanometer-order surface roughness, acceptable to most MEMS applications.","PeriodicalId":436133,"journal":{"name":"Polytronic 2005 - 5th International Conference on Polymers and Adhesives in Microelectronics and Photonics","volume":"41 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113978712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-10-23DOI: 10.1109/POLYTR.2005.1596500
T. Fahlbusch, L. Overmeyer
The application of optical structures in data transfer and measurement increases steadily. Optical fibres in WAN (Wide Area Networks) and LAN (Local Area Network) are state of the art. Polymer optical fibres (POFs) are superior to electrical conductors due to their lightness, their resistance to damage and electromagnetic interference. Just like their glass equivalents they provide a high data transfer rate. The integration of light guiding structures on and in surfaces with the help of dispensing technology is considered in this paper. In the first part the properties of optical fibers are described. The available structures and the integration in components lead to the direct creation of light guiding structures in and on surfaces. For achieving this, one polymer is applied on the surface in order to build the cladding. In the next step another polymer is filled in or on the cladding and sets up the core of the light guiding structure. An additional layer of the first polymer encloses the core.
{"title":"Direct Writing of Light Guiding Structures","authors":"T. Fahlbusch, L. Overmeyer","doi":"10.1109/POLYTR.2005.1596500","DOIUrl":"https://doi.org/10.1109/POLYTR.2005.1596500","url":null,"abstract":"The application of optical structures in data transfer and measurement increases steadily. Optical fibres in WAN (Wide Area Networks) and LAN (Local Area Network) are state of the art. Polymer optical fibres (POFs) are superior to electrical conductors due to their lightness, their resistance to damage and electromagnetic interference. Just like their glass equivalents they provide a high data transfer rate. The integration of light guiding structures on and in surfaces with the help of dispensing technology is considered in this paper. In the first part the properties of optical fibers are described. The available structures and the integration in components lead to the direct creation of light guiding structures in and on surfaces. For achieving this, one polymer is applied on the surface in order to build the cladding. In the next step another polymer is filled in or on the cladding and sets up the core of the light guiding structure. An additional layer of the first polymer encloses the core.","PeriodicalId":436133,"journal":{"name":"Polytronic 2005 - 5th International Conference on Polymers and Adhesives in Microelectronics and Photonics","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130238194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-10-23DOI: 10.1109/POLYTR.2005.1596521
Zhenyu Wu, Yintang Yang, JiaYou Wang
Flurinated amorphous carbon (a-C:F) films were deposited at room temperature using C4F8and CH4as precursor gases by electron cyclotron resonance chemical vapour deposition (ECR-CVD). Chemical compositions and bond structures were investigated by Fourier transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS). CF=C (1680cm-1), as well as CF2=CF (1780cm-1) that acted as termination groups of the cross-linking film structure were identified in the deposited a-C:F films. C 1s peaks were assigned to CF3(295eV), CF2(293eV), CF(291eV), C-O(289eV), C-CFx(x=1∼3) (287eV) and C-C termination bond(285eV), respectively. The CF3and C-C termination bonds were thermally liable and could induce reduction of film thickness after heat treatment through out-gassing effect. The thermal stability of a-C:F films improved with increasing cross-linking C-CFxbonds and decreasing CF3and C-C termination bonds. The dissipation factor of the as-deposited metal-insulator-semiconductor capacitor (MIS-C) was approximately 0.07 at 1MHz. The dielectric constant of a-C:F films increased after heat treatment due to reduced electronic polarization and enhanced film density. The interface trap density decreased from (5∼9) ×1011eV-1cm-2to (4∼6) ×1011eV-1cm-2after 300°C annealing in a nitrogen environment. The current-voltage characteristics for a-C:F films was explained using ohmic conduction at low fields and Poole-Frankel(PF) conduction mechanism at high fields. The trap energy of the traps at band tails formed by the delocalized π electrons decreased after annealing, which led to increase of leakage current due to field-enhanced thermal excitation of trapped electrons into the conduction band.
{"title":"Structural, thermal and electrical properties of plasma deposited a-C:F films","authors":"Zhenyu Wu, Yintang Yang, JiaYou Wang","doi":"10.1109/POLYTR.2005.1596521","DOIUrl":"https://doi.org/10.1109/POLYTR.2005.1596521","url":null,"abstract":"Flurinated amorphous carbon (a-C:F) films were deposited at room temperature using C<inf>4</inf>F<inf>8</inf>and CH<inf>4</inf>as precursor gases by electron cyclotron resonance chemical vapour deposition (ECR-CVD). Chemical compositions and bond structures were investigated by Fourier transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS). CF=C (1680cm<sup>-1</sup>), as well as CF<inf>2</inf>=CF (1780cm<sup>-1</sup>) that acted as termination groups of the cross-linking film structure were identified in the deposited a-C:F films. C 1s peaks were assigned to CF<inf>3</inf>(295eV), CF<inf>2</inf>(293eV), CF(291eV), C-O(289eV), C-CF<inf>x</inf>(x=1∼3) (287eV) and C-C termination bond(285eV), respectively. The CF<inf>3</inf>and C-C termination bonds were thermally liable and could induce reduction of film thickness after heat treatment through out-gassing effect. The thermal stability of a-C:F films improved with increasing cross-linking C-CF<inf>x</inf>bonds and decreasing CF<inf>3</inf>and C-C termination bonds. The dissipation factor of the as-deposited metal-insulator-semiconductor capacitor (MIS-C) was approximately 0.07 at 1MHz. The dielectric constant of a-C:F films increased after heat treatment due to reduced electronic polarization and enhanced film density. The interface trap density decreased from (5∼9) ×10<sup>11</sup>eV<sup>-1</sup>cm<sup>-2</sup>to (4∼6) ×10<sup>11</sup>eV<sup>-1</sup>cm<sup>-2</sup>after 300°C annealing in a nitrogen environment. The current-voltage characteristics for a-C:F films was explained using ohmic conduction at low fields and Poole-Frankel(PF) conduction mechanism at high fields. The trap energy of the traps at band tails formed by the delocalized π electrons decreased after annealing, which led to increase of leakage current due to field-enhanced thermal excitation of trapped electrons into the conduction band.","PeriodicalId":436133,"journal":{"name":"Polytronic 2005 - 5th International Conference on Polymers and Adhesives in Microelectronics and Photonics","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133798640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-10-23DOI: 10.1109/POLYTR.2005.1596518
R. Meixner, F. A. Yildirim, R. R. Schliewe, H. Goebel, W. Bauhofer, W. Krautschneider
We report a low-temperature process to manufacture an all polymer thin-film transistor avoiding curing and annealing temperatures higher than 80°C. This aspect of energy efficiency directly supports the low-cost feature of organic devices in fabrication. The process is being demonstrated by using commercially available polymers such as poly(ethylenedioxythiophene)/polystyrenesulfonate dispersion representing the source, drain and gate electrode, Norland optical adhesive NOA 75 as the gate-dielectric and regioregular poly(3-hexylthiophene-2,5-diyl) as the semiconducting polymer - all on a polyvinyl chloride substrate. Functional devices with a channel length of 25 μm and a channel width of 1 mm to 5 mm have been realized.
{"title":"Low-Temperature Process for Manufacturing All Polymer Thin-Film Transistors","authors":"R. Meixner, F. A. Yildirim, R. R. Schliewe, H. Goebel, W. Bauhofer, W. Krautschneider","doi":"10.1109/POLYTR.2005.1596518","DOIUrl":"https://doi.org/10.1109/POLYTR.2005.1596518","url":null,"abstract":"We report a low-temperature process to manufacture an all polymer thin-film transistor avoiding curing and annealing temperatures higher than 80°C. This aspect of energy efficiency directly supports the low-cost feature of organic devices in fabrication. The process is being demonstrated by using commercially available polymers such as poly(ethylenedioxythiophene)/polystyrenesulfonate dispersion representing the source, drain and gate electrode, Norland optical adhesive NOA 75 as the gate-dielectric and regioregular poly(3-hexylthiophene-2,5-diyl) as the semiconducting polymer - all on a polyvinyl chloride substrate. Functional devices with a channel length of 25 μm and a channel width of 1 mm to 5 mm have been realized.","PeriodicalId":436133,"journal":{"name":"Polytronic 2005 - 5th International Conference on Polymers and Adhesives in Microelectronics and Photonics","volume":"372 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131816749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-10-23DOI: 10.1109/POLYTR.2005.1596512
Yan Zhang, R. Larsson, Jing-yu Fan, Z. Cheng, J. Liu
In this paper, the micro-polar theory is used to develop a numerical model for the prediction of the behavior of the material in the vicinity of the microsystem interconnection interface as well within the interface. This model, as compared with the classical continuum theory, can offer the possibility to include the size-effect for the simulation and prediction of the microsystem packaging interconnection materials. The model has been carried out in a finite element environment, and some examples are given as the application of the model.
{"title":"Microsystem Interconnections Modelling Using Micropolar Theory and Discontinuous Approximation","authors":"Yan Zhang, R. Larsson, Jing-yu Fan, Z. Cheng, J. Liu","doi":"10.1109/POLYTR.2005.1596512","DOIUrl":"https://doi.org/10.1109/POLYTR.2005.1596512","url":null,"abstract":"In this paper, the micro-polar theory is used to develop a numerical model for the prediction of the behavior of the material in the vicinity of the microsystem interconnection interface as well within the interface. This model, as compared with the classical continuum theory, can offer the possibility to include the size-effect for the simulation and prediction of the microsystem packaging interconnection materials. The model has been carried out in a finite element environment, and some examples are given as the application of the model.","PeriodicalId":436133,"journal":{"name":"Polytronic 2005 - 5th International Conference on Polymers and Adhesives in Microelectronics and Photonics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127546977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：