Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412774
Sung-Ku Yeo, Jong-Hoon Chun, Kyoung-Min Kim, J. Yook, Young-Se Kwon
In this paper, we made a high power amplifier module package using a selectively anodized aluminum substrate for the X-band radar T/R modules. The proposed solution of package is based on thick anodized aluminum oxide (Al2O3) layers and power chips mounted on aluminum for an effective heat sink. The fabricated high power amplifier module has a maximum output power of 39.49 dBm and maximum gain of 32 dB over 9-10 GHz frequency band. This package method can be further contributed to decreasing cost, reducing module size and managing thermal problem for the microwave high power T/R modules.
{"title":"An X-band high power amplifier module package using selectively anodized aluminum substrate","authors":"Sung-Ku Yeo, Jong-Hoon Chun, Kyoung-Min Kim, J. Yook, Young-Se Kwon","doi":"10.1109/EMICC.2007.4412774","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412774","url":null,"abstract":"In this paper, we made a high power amplifier module package using a selectively anodized aluminum substrate for the X-band radar T/R modules. The proposed solution of package is based on thick anodized aluminum oxide (Al2O3) layers and power chips mounted on aluminum for an effective heat sink. The fabricated high power amplifier module has a maximum output power of 39.49 dBm and maximum gain of 32 dB over 9-10 GHz frequency band. This package method can be further contributed to decreasing cost, reducing module size and managing thermal problem for the microwave high power T/R modules.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126875633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412639
S. Bychikhin, V. Dubec, J. Kuzmík, J. Wurfl, P. Kurpas, J. Teyssier, D. Pogany
Thermal distribution during a current gain collapse event is investigated in multi-finger InGaP/GaAs HBTs using the transient interferometric mapping method. The onset of the collapse is observed at time of about 1ms in devices with a low emitter ballasting resistance RE, while for HBTs with a high RE, the current is distributed equally over the fingers. 3D thermal simulation supports the results and allows an estimation of temperature at which the collapse occurs.
{"title":"Current gain collapse in HBTs analysed by transient interferometric mapping method","authors":"S. Bychikhin, V. Dubec, J. Kuzmík, J. Wurfl, P. Kurpas, J. Teyssier, D. Pogany","doi":"10.1109/EMICC.2007.4412639","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412639","url":null,"abstract":"Thermal distribution during a current gain collapse event is investigated in multi-finger InGaP/GaAs HBTs using the transient interferometric mapping method. The onset of the collapse is observed at time of about 1ms in devices with a low emitter ballasting resistance RE, while for HBTs with a high RE, the current is distributed equally over the fingers. 3D thermal simulation supports the results and allows an estimation of temperature at which the collapse occurs.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116572373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412669
C. Meliani, R. Behtash, J. Wiirfl, W. Heinrich, G. Trankle
A broadband GaN monolithic power amplifier covering the L to X bands is presented as is required for various applications in measurement set-ups and multi-band systems. It is based on 8 transistor cells with 4 times 50 mm gate width each following the distributed amplifier concept. The amplifier achieves 10 dB broadband small-signal gain and a 3 dB cut-off frequency of 11 GHz. The circuit delivers between 1.4 and 2.2 W over the bandwidth from 2 GHz up to 10 GHz. At the maximum output power a PAE higher than 20% is achieved.
{"title":"A Broadband GaN-MMIC power amplifier for L to X Bands","authors":"C. Meliani, R. Behtash, J. Wiirfl, W. Heinrich, G. Trankle","doi":"10.1109/EMICC.2007.4412669","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412669","url":null,"abstract":"A broadband GaN monolithic power amplifier covering the L to X bands is presented as is required for various applications in measurement set-ups and multi-band systems. It is based on 8 transistor cells with 4 times 50 mm gate width each following the distributed amplifier concept. The amplifier achieves 10 dB broadband small-signal gain and a 3 dB cut-off frequency of 11 GHz. The circuit delivers between 1.4 and 2.2 W over the bandwidth from 2 GHz up to 10 GHz. At the maximum output power a PAE higher than 20% is achieved.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134246035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412657
V. Hoel, S. Boulay, H. Gérard, V. Rabaland, E. Delos, J. De Jaeger, M. di-Forte-Poisson, C. Brylinski, H. Lahrèche, R. Langer, P. Bove
In this paper, arc presented the first results obtained from AlGaN/GaN HEMTs devices processed on both MBE and MOCVD epitaxial structures grown on "composite" substrates. These substrates are based on innovative structures in which a thin Si or SiC single crystal layer is transferred on top of a thick polycrystalline SiC wafer with a thin SiO2 intermediary insulating layer. The fabrication of the transistors is based on the process flow developed by "TIGER" for HEMT epitaxy on SiC bulk substrates. The obtained results show the capabilities of such composite devices, providing HEMT device electrical and small signal microwave performance similar to those obtained currently on bulk single crystal SiC substrates. The composite substrate approach appears as very promising for applications requiring low cost microwave power devices, such as mobile communications.
{"title":"AlGaN/GaN HEMTs on epitaxies grown on composite substrate","authors":"V. Hoel, S. Boulay, H. Gérard, V. Rabaland, E. Delos, J. De Jaeger, M. di-Forte-Poisson, C. Brylinski, H. Lahrèche, R. Langer, P. Bove","doi":"10.1109/EMICC.2007.4412657","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412657","url":null,"abstract":"In this paper, arc presented the first results obtained from AlGaN/GaN HEMTs devices processed on both MBE and MOCVD epitaxial structures grown on \"composite\" substrates. These substrates are based on innovative structures in which a thin Si or SiC single crystal layer is transferred on top of a thick polycrystalline SiC wafer with a thin SiO2 intermediary insulating layer. The fabrication of the transistors is based on the process flow developed by \"TIGER\" for HEMT epitaxy on SiC bulk substrates. The obtained results show the capabilities of such composite devices, providing HEMT device electrical and small signal microwave performance similar to those obtained currently on bulk single crystal SiC substrates. The composite substrate approach appears as very promising for applications requiring low cost microwave power devices, such as mobile communications.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"152 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115170675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412652
B. Perumana, S. Chakraborty, S. Sarkar, Procheta Sen, D. Yeh, A. Raghavan, D. Dawn, Chang-Ho Lee, S. Pinel, J. Laskar
A SiGe sub-harmonic down-conversion mixer using a novel active anti-parallel diode pair is presented for millimeter-wave applications. The proposed architecture can help reduce conversion loss and also lower the required local oscillator power. With an LO power of 0 dBm, the measured 2times conversion gain varies from -5 to -7.8 dB in the 50 to 65 GHz range. Compared to earlier reports of millimeter-wave SiGe and GaAs sub-harmonic mixers requiring 5 to 10 dBm of LO power, this circuit achieves similar conversion loss with an LO power as low as -7.5 dBm, while consuming only 0.5 mW of DC power.
{"title":"A SiGe sub-harmonic mixer for millimeter-wave applications","authors":"B. Perumana, S. Chakraborty, S. Sarkar, Procheta Sen, D. Yeh, A. Raghavan, D. Dawn, Chang-Ho Lee, S. Pinel, J. Laskar","doi":"10.1109/EMICC.2007.4412652","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412652","url":null,"abstract":"A SiGe sub-harmonic down-conversion mixer using a novel active anti-parallel diode pair is presented for millimeter-wave applications. The proposed architecture can help reduce conversion loss and also lower the required local oscillator power. With an LO power of 0 dBm, the measured 2times conversion gain varies from -5 to -7.8 dB in the 50 to 65 GHz range. Compared to earlier reports of millimeter-wave SiGe and GaAs sub-harmonic mixers requiring 5 to 10 dBm of LO power, this circuit achieves similar conversion loss with an LO power as low as -7.5 dBm, while consuming only 0.5 mW of DC power.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125689488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412673
Tangsheng Chen, Bin Zhang, G. Jiao, C. Ren, Cheng Chen, K. Shao, N. Yang
AIGaN/GaN HEMT power MIMIC which is designed in microstrip technology on Sl-SiC substrate is presented in this work. The chip size is only 2.0 mmtimes1.1 mmtimes0.08 mm. The developed two-stage power MMIC operates at frequency between 9.4-10.6 GHz and delivers a pulsed output power of 11.1 W at 9.7 GHz under a drain bias of 30 V. The linear gain of the MMIC is about 10 dB which is much lower than the simulated value of 15 dB. Further optimization of the MMIC processing and circuit design is necessary to improve the performances of the MMIC.
{"title":"X-Band 11W AlGaN/GaN HEMT power MMICs","authors":"Tangsheng Chen, Bin Zhang, G. Jiao, C. Ren, Cheng Chen, K. Shao, N. Yang","doi":"10.1109/EMICC.2007.4412673","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412673","url":null,"abstract":"AIGaN/GaN HEMT power MIMIC which is designed in microstrip technology on Sl-SiC substrate is presented in this work. The chip size is only 2.0 mmtimes1.1 mmtimes0.08 mm. The developed two-stage power MMIC operates at frequency between 9.4-10.6 GHz and delivers a pulsed output power of 11.1 W at 9.7 GHz under a drain bias of 30 V. The linear gain of the MMIC is about 10 dB which is much lower than the simulated value of 15 dB. Further optimization of the MMIC processing and circuit design is necessary to improve the performances of the MMIC.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125247232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412686
Y. Jato, A. Herrera
This paper presents a MMIC ESD protected low-noise amplifier manufactured in SiGe:C BiCMOS technology for the IEEE 802.11a/HiperLAN WLAN standard. The LNA operates at 5.2 GHz and achieves a measured gain of 22 dB, a noise figure of 3.3 dB and an output 1 dB compression point of -3 dBm. The amplifier also shows wideband input and output matching The ESD protection circuit has been modeled and the results have been used to study its impact in the performance of the amplifier. The LNA was mounted and measured to test the similarity with simulations.
{"title":"ESD structures impact analysis on a WLAN 802.11a LNA","authors":"Y. Jato, A. Herrera","doi":"10.1109/EMICC.2007.4412686","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412686","url":null,"abstract":"This paper presents a MMIC ESD protected low-noise amplifier manufactured in SiGe:C BiCMOS technology for the IEEE 802.11a/HiperLAN WLAN standard. The LNA operates at 5.2 GHz and achieves a measured gain of 22 dB, a noise figure of 3.3 dB and an output 1 dB compression point of -3 dBm. The amplifier also shows wideband input and output matching The ESD protection circuit has been modeled and the results have been used to study its impact in the performance of the amplifier. The LNA was mounted and measured to test the similarity with simulations.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122323246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412640
D. Prikhodko, Y. Tkachenko, S. Sprinkle, R. Carter, S. Nabokin, J. Chiesa
In this paper the design and measurement of a high performance SP6T GaAs pHEMT switch for Quad-Band GSM/EDGE Front-Ends are discussed. The design uses a novel approach to reduce the generated harmonic levels at 3 V supply, 35 dBm drive and antenna VSWR of 5:1 down to -40 dBm, the lowest levels for the multi-mode multi-throw switches reported to date. Besides low harmonic performance, low TX insertion loss of below 0.5 dB at 2 GHz and RX insertion loss of below 1 dB at 2 GHz is achieved.
{"title":"Design of a low VSWR harmonics, low loss SP6T switch for GSM/Edge applications.","authors":"D. Prikhodko, Y. Tkachenko, S. Sprinkle, R. Carter, S. Nabokin, J. Chiesa","doi":"10.1109/EMICC.2007.4412640","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412640","url":null,"abstract":"In this paper the design and measurement of a high performance SP6T GaAs pHEMT switch for Quad-Band GSM/EDGE Front-Ends are discussed. The design uses a novel approach to reduce the generated harmonic levels at 3 V supply, 35 dBm drive and antenna VSWR of 5:1 down to -40 dBm, the lowest levels for the multi-mode multi-throw switches reported to date. Besides low harmonic performance, low TX insertion loss of below 0.5 dB at 2 GHz and RX insertion loss of below 1 dB at 2 GHz is achieved.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115099751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412647
D. Resca, A. Santarelli, A. Raffo, R. Cignani, G. Vannini, F. Filicori
Electron device modelling requires the accurate identification of a suitable parasitic network accounting for the passive structures which connect the intrinsic electron device to the external world. In conventional approaches, the parasitic network is described by a proper topology of lumped elements. As an alternative, a distributed description of the parasitic network can be conveniently adopted. In particular, the latter solution is the better choice when dealing with device scaling and very high operating frequencies. In this paper the parasitic network is described by means of a suitable distributed network identified through electromagnetic simulations of the device layout. It is shown how the adoption of a distributed instead of a lumped description leads to a more accurate equivalent-circuit-based electron device model. The good scalability properties of the approach are also presented through experimental results.
{"title":"Scalable equivalent circuit PHEMT modelling using an EM-based parasitic network description","authors":"D. Resca, A. Santarelli, A. Raffo, R. Cignani, G. Vannini, F. Filicori","doi":"10.1109/EMICC.2007.4412647","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412647","url":null,"abstract":"Electron device modelling requires the accurate identification of a suitable parasitic network accounting for the passive structures which connect the intrinsic electron device to the external world. In conventional approaches, the parasitic network is described by a proper topology of lumped elements. As an alternative, a distributed description of the parasitic network can be conveniently adopted. In particular, the latter solution is the better choice when dealing with device scaling and very high operating frequencies. In this paper the parasitic network is described by means of a suitable distributed network identified through electromagnetic simulations of the device layout. It is shown how the adoption of a distributed instead of a lumped description leads to a more accurate equivalent-circuit-based electron device model. The good scalability properties of the approach are also presented through experimental results.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133175137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412682
PP D.Hadziabdic, PP C.Jiang, PP T.K.Johansen, G. G. Fischer, PP B.Heinemann, PP V.Krozer, Pp
In this work we present a direct parameter extraction procedure for SiGe pnp heterojunction bipolar transistor (HBT) large-signal and small-signal models. Test structure parasitics are removed from the measured small-signal parameters using an open-short de-embedding technique, improved to account for the distributed nature of the interconnect lines. Good agreement is achieved between the small-signal model of the HBT and the measurements. Parameters for the large-signal VBIC model are extracted based on multi-bias small-signal model extraction, leading to consistency between measured and modeled fT.
{"title":"De-embedding and modelling of pnp SiGe HBTs","authors":"PP D.Hadziabdic, PP C.Jiang, PP T.K.Johansen, G. G. Fischer, PP B.Heinemann, PP V.Krozer, Pp","doi":"10.1109/EMICC.2007.4412682","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412682","url":null,"abstract":"In this work we present a direct parameter extraction procedure for SiGe pnp heterojunction bipolar transistor (HBT) large-signal and small-signal models. Test structure parasitics are removed from the measured small-signal parameters using an open-short de-embedding technique, improved to account for the distributed nature of the interconnect lines. Good agreement is achieved between the small-signal model of the HBT and the measurements. Parameters for the large-signal VBIC model are extracted based on multi-bias small-signal model extraction, leading to consistency between measured and modeled fT.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115080140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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