We report on optical and electrical properties of amorphous In-Ga-Mg-O (a-IGMO) films and characteristics of a-IGMO channel thin-film transistors which went through the reductive post-annealing process. Optical band-gap energies of a-IGMO films were larger than that of amorphous In-Ga-Zn-O (a-IGZO) films. Carrier density and Hall mobility of a-IGMO films with the reductive post-annealing were almost the same degree as those of a-IGZO films. Although the reductive annealing with the SiNx underlayer makes an a-IGZO film degenerate semiconductor and its TFT inoperative, a-IGMO TFTs successfully operated after this reductive process. Break-junction tunnelling spectroscopy which was applicable not to a-IGMO but to a-IGZO with the reductive process showed a noticeable density of state character in the vicinity of the Fermi level for a-IGZO, which is consistent with its property.
{"title":"Amorphous In-Ga-Mg-O Thin Films Formed by RF Magnetron Sputtering: Optical, Electrical Properties and Thin-Film-Transistor Characteristics","authors":"Hisato Yabuta;Naho Itagaki;Toshikazu Ekino;Yuzo Shigesato","doi":"10.1109/OJNANO.2022.3222850","DOIUrl":"10.1109/OJNANO.2022.3222850","url":null,"abstract":"We report on optical and electrical properties of amorphous In-Ga-Mg-O (a-IGMO) films and characteristics of a-IGMO channel thin-film transistors which went through the reductive post-annealing process. Optical band-gap energies of a-IGMO films were larger than that of amorphous In-Ga-Zn-O (a-IGZO) films. Carrier density and Hall mobility of a-IGMO films with the reductive post-annealing were almost the same degree as those of a-IGZO films. Although the reductive annealing with the SiN\u0000<sub>x</sub>\u0000 underlayer makes an a-IGZO film degenerate semiconductor and its TFT inoperative, a-IGMO TFTs successfully operated after this reductive process. Break-junction tunnelling spectroscopy which was applicable not to a-IGMO but to a-IGZO with the reductive process showed a noticeable density of state character in the vicinity of the Fermi level for a-IGZO, which is consistent with its property.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"149-152"},"PeriodicalIF":1.7,"publicationDate":"2022-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9954130","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62889075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The past decade has witnessed a tremendous reduction in the feature size from the deep-submicron to the advanced nano-scale CMOS devices. In nanoscale devices based high-speed systems, the budgeting of jitter due to supply fluctuations is one of the major performance bottlenecks while designing integrated circuits (ICs). In this paper, an accurate and efficient method to analyse power supply induced jitter (PSIJ) in CMOS N-stage inverters is developed using the estimation-by-inspection method. Based on the Indefinite Admittance Matrix, a reduced two-port network is developed for a multiple-input circuit, considering the presence of the supply/bulk/ground sources. The closed-form expressions of the PSIJ have been evaluated for a single and N-stages CMOS inverter chain. The expression is also valid for the PSIJ analysis at any intermediate stage of the N-stage chain. For validation purpose, the circuits are designed in a standard 28 nm CMOS technology with V$_text{DD}$ of 1 V. The analytical results are compared with the simulation and the experiments. The maximum mean percentage error for EDA simulation and experimentally measured results are 2.4% and 13%, respectively. The proposed analysis is compared with some of the existing PSIJ modelling techniques and shows a significant improvement in speed-up factor and error percentage.
{"title":"Indefinite Admittance Matrix Based Modelling of PSIJ in Nano-Scale CMOS I/O Drivers","authors":"Vijender Kumar Sharma;Jai Narayan Tripathi;Hitesh Shrimali","doi":"10.1109/OJNANO.2022.3221838","DOIUrl":"10.1109/OJNANO.2022.3221838","url":null,"abstract":"The past decade has witnessed a tremendous reduction in the feature size from the deep-submicron to the advanced nano-scale CMOS devices. In nanoscale devices based high-speed systems, the budgeting of jitter due to supply fluctuations is one of the major performance bottlenecks while designing integrated circuits (ICs). In this paper, an accurate and efficient method to analyse power supply induced jitter (PSIJ) in CMOS N-stage inverters is developed using the estimation-by-inspection method. Based on the Indefinite Admittance Matrix, a reduced two-port network is developed for a multiple-input circuit, considering the presence of the supply/bulk/ground sources. The closed-form expressions of the PSIJ have been evaluated for a single and N-stages CMOS inverter chain. The expression is also valid for the PSIJ analysis at any intermediate stage of the N-stage chain. For validation purpose, the circuits are designed in a standard 28 nm CMOS technology with V\u0000<inline-formula><tex-math>$_text{DD}$</tex-math></inline-formula>\u0000 of 1 V. The analytical results are compared with the simulation and the experiments. The maximum mean percentage error for EDA simulation and experimentally measured results are 2.4% and 13%, respectively. The proposed analysis is compared with some of the existing PSIJ modelling techniques and shows a significant improvement in speed-up factor and error percentage.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"199-209"},"PeriodicalIF":1.7,"publicationDate":"2022-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9947063","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62889006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study addresses the first feasible, and comprehensive approach to demonstrate a compact resistance-inductance-capacitance-conductance (RLCG) model for a multi-walled carbon nanotube bundle (MWB) and multilayered graphene nanoribbon (MLGNR) based tapered through silicon via (T-TSV) along with the different shaped bumps. The physical structures of bumps accurately considered the effect of the high frequency resistive impact and the inter-metal dielectric (IMD) layer. A mathematical framework has been designed for the parasitics of the cylindrical, barrel, hourglass and the tapered bump structures. The bump and via parasitics have been computed by utilizing the current continuity expression, partial inductance method, splitting infinitesimally thin slices of bump and triangular arrangement of tube assemblage. In order to validate the proposed model, the EM simulation is performed and compared against the analytical results. A remarkable consistency of the analytical and EM simulation-based results supports the proposed model accuracy. Furthermore, when compared to the MWB based structures, the MLGNR -based tapered TSV shows a substantial improvement in power loss and crosstalk. Furthermore, regardless of via height, the TSV with tapered bump structure reduces the overall crosstalk induced delay by 33.22%, 28.90%, and 21.61%, respectively, when compared to the barrel, cylindrical and the hourglass structure.
{"title":"Performance Analysis of Bump in Tapered TSV: Impact on Crosstalk and Power Loss","authors":"Shivangi Chandrakar;Deepika Gupta;Manoj Kumar Majumder;Brajesh Kumar Kaushik","doi":"10.1109/OJNANO.2022.3221815","DOIUrl":"10.1109/OJNANO.2022.3221815","url":null,"abstract":"This study addresses the first feasible, and comprehensive approach to demonstrate a compact resistance-inductance-capacitance-conductance (\u0000<italic>RLCG</i>\u0000) model for a multi-walled carbon nanotube bundle (MWB) and multilayered graphene nanoribbon (MLGNR) based tapered through silicon via (\u0000<italic>T</i>\u0000-TSV) along with the different shaped bumps. The physical structures of bumps accurately considered the effect of the high frequency resistive impact and the inter-metal dielectric (IMD) layer. A mathematical framework has been designed for the parasitics of the cylindrical, barrel, hourglass and the tapered bump structures. The bump and via parasitics have been computed by utilizing the current continuity expression, partial inductance method, splitting infinitesimally thin slices of bump and triangular arrangement of tube assemblage. In order to validate the proposed model, the EM simulation is performed and compared against the analytical results. A remarkable consistency of the analytical and EM simulation-based results supports the proposed model accuracy. Furthermore, when compared to the MWB based structures, the MLGNR -based tapered TSV shows a substantial improvement in power loss and crosstalk. Furthermore, regardless of via height, the TSV with tapered bump structure reduces the overall crosstalk induced delay by 33.22%, 28.90%, and 21.61%, respectively, when compared to the barrel, cylindrical and the hourglass structure.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"227-235"},"PeriodicalIF":1.7,"publicationDate":"2022-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9947291","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62888734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We fabricated nanocrystalline Ge films using radio-frequency (RF) magnetron plasma sputtering deposition under a high Ar-gas pressure. The Ge nanograins changed from amorphous to crystalline when the distance between the Ge sputtering target and the substrate was decreased to 5 mm and the RF input power was 11.8 W/cm2 (60 W), where the deposition rate was as high as 660 nm/min. In addition, the size of the nanocrystalline grains increased from 100 to 307 nm when the RF input power for plasma production was increased from 11.8 W/cm2 (60 W) to 17.7 W/cm2 (90 W). In the developed narrow-gap plasma process at sub-Torr pressures, nanocrystalline Ge films were successfully fabricated on Cu substrates at low temperatures, without the substrate being heated. However, when annealing was conducted under an N2 atmosphere, which is the conventional method to induce solid-phase crystallization, the amorphous Ge layer on a Cu substrate changed to a Cu3Ge crystal layer through interdiffusion of Ge and Cu atoms at 400–500 °C.
{"title":"Low-Temperature and High-Speed Fabrication of Nanocrystalline Ge Films on Cu Substrates Using Sub-Torr-Pressure Plasma Sputtering","authors":"Giichiro Uchida;Kenta Nagai;Ayaka Wakana;Yumiko Ikebe","doi":"10.1109/OJNANO.2022.3221462","DOIUrl":"10.1109/OJNANO.2022.3221462","url":null,"abstract":"We fabricated nanocrystalline Ge films using radio-frequency (RF) magnetron plasma sputtering deposition under a high Ar-gas pressure. The Ge nanograins changed from amorphous to crystalline when the distance between the Ge sputtering target and the substrate was decreased to 5 mm and the RF input power was 11.8 W/cm\u0000<sup>2</sup>\u0000 (60 W), where the deposition rate was as high as 660 nm/min. In addition, the size of the nanocrystalline grains increased from 100 to 307 nm when the RF input power for plasma production was increased from 11.8 W/cm\u0000<sup>2</sup>\u0000 (60 W) to 17.7 W/cm\u0000<sup>2</sup>\u0000 (90 W). In the developed narrow-gap plasma process at sub-Torr pressures, nanocrystalline Ge films were successfully fabricated on Cu substrates at low temperatures, without the substrate being heated. However, when annealing was conducted under an N\u0000<sub>2</sub>\u0000 atmosphere, which is the conventional method to induce solid-phase crystallization, the amorphous Ge layer on a Cu substrate changed to a Cu\u0000<sub>3</sub>\u0000Ge crystal layer through interdiffusion of Ge and Cu atoms at 400–500 °C.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"153-158"},"PeriodicalIF":1.7,"publicationDate":"2022-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9946384","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62888336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Biodegradables are a promising path for the future of electronics in a greener mindset. The review study focuses on their applications and past and current research results. The paper also investigates the application of nanomaterials as fillers to control or increase the physical (electrical, mechanical, thermal) properties of biodegradable biopolymers. These biodegradables and nanocomposites are already effectively used in prototypes and advanced application areas with demanding requirements, such as flexible and wearable electronics, implantable or biomedical applications, and traditional commercial electronics. The nano-enhanced biopolymer substrates (e.g., with improved gas and water barrier functionalities) sometimes also with integrated, nano-enabled functionalities (such as electromagnetic shielding or plasmonic activity) can be beneficial in many electronics packaging and nanopackaging applications as well.
{"title":"Biodegradable and Nanocomposite Materials as Printed Circuit Substrates: A Mini-Review","authors":"Attila Géczy;Csaba Farkas;Rebeka Kovács;Denis Froš;Petr Veselý;Attila Bonyár","doi":"10.1109/OJNANO.2022.3221273","DOIUrl":"10.1109/OJNANO.2022.3221273","url":null,"abstract":"Biodegradables are a promising path for the future of electronics in a greener mindset. The review study focuses on their applications and past and current research results. The paper also investigates the application of nanomaterials as fillers to control or increase the physical (electrical, mechanical, thermal) properties of biodegradable biopolymers. These biodegradables and nanocomposites are already effectively used in prototypes and advanced application areas with demanding requirements, such as flexible and wearable electronics, implantable or biomedical applications, and traditional commercial electronics. The nano-enhanced biopolymer substrates (e.g., with improved gas and water barrier functionalities) sometimes also with integrated, nano-enabled functionalities (such as electromagnetic shielding or plasmonic activity) can be beneficial in many electronics packaging and nanopackaging applications as well.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"182-190"},"PeriodicalIF":1.7,"publicationDate":"2022-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9944849","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62888728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The sub-threshold regime is suited for applications requiring ultra-low power consumption with low to medium frequency (tens to hundreds of MHz) of operation. Therefore, this paper presents electrical modeling and comprehensive analysis of copper-carbon nanotube (Cu-CNT) composite interconnects for sub-threshold circuit design. At lower operating frequencies, the effective complex conductivity of Cu-CNT composites in the nanoscale is formulated by developing an analytical model. Based on the proposed equivalent single conductor model, the frequency-dependent resistance and inductance of composite interconnects are computed. Finally, the sub-threshold crosstalk effect, transfer gain, and Nyquist stability of coupled Cu-CNT composite interconnect are analyzed using ABCD matrix approach.
{"title":"Modeling and Analysis of Cu-Carbon Nanotube Composites for Sub-Threshold Interconnects","authors":"Ashish Singh;Brajesh Kumar Kaushik;Rohit Dhiman","doi":"10.1109/OJNANO.2022.3221141","DOIUrl":"10.1109/OJNANO.2022.3221141","url":null,"abstract":"The sub-threshold regime is suited for applications requiring ultra-low power consumption with low to medium frequency (tens to hundreds of MHz) of operation. Therefore, this paper presents electrical modeling and comprehensive analysis of copper-carbon nanotube (Cu-CNT) composite interconnects for sub-threshold circuit design. At lower operating frequencies, the effective complex conductivity of Cu-CNT composites in the nanoscale is formulated by developing an analytical model. Based on the proposed equivalent single conductor model, the frequency-dependent resistance and inductance of composite interconnects are computed. Finally, the sub-threshold crosstalk effect, transfer gain, and Nyquist stability of coupled Cu-CNT composite interconnect are analyzed using \u0000<italic>ABCD</i>\u0000 matrix approach.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"236-243"},"PeriodicalIF":1.7,"publicationDate":"2022-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9944876","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62888500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
As electronic devices get smaller, more portable, and smarter, a new approach of realizing electronics in thin, soft, and even stretchable style that could be worn and attached to the skin, which is called skin electronics, has emerged and attracted much attention. To achieve well compliance, extend the maximum stretchability, promote the comfortability of wearing, and make the most use of the skin electronics, researchers are making efforts in different aspects. In this article, we summarized the recent advances in categories of materials science, design strategies and novel applications. Examples of skin electronics using various functional materials including piezoelectric, thermoelectric, etc., and soft conductive materials including PEDOT: PSS-based conductive polymer, carbon nanomaterials, metal-based materials and hydrogels were given. Different mechanics design strategies for enhancing mechanical performance and comfortability design strategies for better wearing experience were introduced. Lastly, practical applications of skin electronics in fields of smart healthcare and human-machine interface were discussed. Research focused on these aspects all boosted the development of skin electronics in different dimensions, with which combined together may help skin electronics take a leap into truly ubiquitous use in our daily life.
{"title":"Recent Advances in Materials, Designs and Applications of Skin Electronics","authors":"Kuanming Yao;Yawen Yang;Pengcheng Wu;Guangyao Zhao;Lidai Wang;Xinge Yu","doi":"10.1109/OJNANO.2022.3218960","DOIUrl":"https://doi.org/10.1109/OJNANO.2022.3218960","url":null,"abstract":"As electronic devices get smaller, more portable, and smarter, a new approach of realizing electronics in thin, soft, and even stretchable style that could be worn and attached to the skin, which is called skin electronics, has emerged and attracted much attention. To achieve well compliance, extend the maximum stretchability, promote the comfortability of wearing, and make the most use of the skin electronics, researchers are making efforts in different aspects. In this article, we summarized the recent advances in categories of materials science, design strategies and novel applications. Examples of skin electronics using various functional materials including piezoelectric, thermoelectric, etc., and soft conductive materials including PEDOT: PSS-based conductive polymer, carbon nanomaterials, metal-based materials and hydrogels were given. Different mechanics design strategies for enhancing mechanical performance and comfortability design strategies for better wearing experience were introduced. Lastly, practical applications of skin electronics in fields of smart healthcare and human-machine interface were discussed. Research focused on these aspects all boosted the development of skin electronics in different dimensions, with which combined together may help skin electronics take a leap into truly ubiquitous use in our daily life.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"55-70"},"PeriodicalIF":1.7,"publicationDate":"2022-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/09935291.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3518260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Developments in plasma process technology have led to innovative advances in the miniaturization and integration of semiconductor devices. However, when semiconductor devices are utilized in the nanoscale domain, defects or damage related to charged particles and ultraviolet (UV) rays emitted from the plasma can emerge, resulting in degraded characteristics for nano-devices. It is thus imperative to come up with a method that suppresses or controls the charge accumulation and ultraviolet (UV) damage in plasma processing. This paper reviews our work on a neutral beam process that suppresses the formation of defects at the atomic layer level on the processed surface, which makes it possible for ideal surface chemical reactions to occur at room temperature. This is vital for the creation of innovative nano-devices in the future.
{"title":"Emerging Plasma Nanotechnology","authors":"Seiji Samukawa","doi":"10.1109/OJNANO.2022.3217806","DOIUrl":"10.1109/OJNANO.2022.3217806","url":null,"abstract":"Developments in plasma process technology have led to innovative advances in the miniaturization and integration of semiconductor devices. However, when semiconductor devices are utilized in the nanoscale domain, defects or damage related to charged particles and ultraviolet (UV) rays emitted from the plasma can emerge, resulting in degraded characteristics for nano-devices. It is thus imperative to come up with a method that suppresses or controls the charge accumulation and ultraviolet (UV) damage in plasma processing. This paper reviews our work on a neutral beam process that suppresses the formation of defects at the atomic layer level on the processed surface, which makes it possible for ideal surface chemical reactions to occur at room temperature. This is vital for the creation of innovative nano-devices in the future.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"133-148"},"PeriodicalIF":1.7,"publicationDate":"2022-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9931942","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62888489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Field-effect gas sensors, integrating the gas sensor and amplification transistor, exhibit excellent sensory performance. Here we report organic thin-film transistors (OTFTs) with nanofiber-textured semiconductor films that exhibit superior ammonia response compared to conventional OTFTs with uniform/flat semiconductor films. The introduce of insulating polymer additives (IPAs) facilitates the formation of semiconducting nanofiber during coating. The effects of IPAs, organic semiconductor/IPA blend ratios and solvents on OTFT-based sensory performance are studied. The results show that the use of SU8 as IPA and chloroform as solvent form intertwined semiconductor nanofibers (∼50 nm in diameter) at the bottom. The resulting OTFTs exhibit extraordinarily high sensitivities to ammonia, which reach 13676%/ppm (current) and 457%/ppm (turn-on voltage), respectively. Finite element analysis is conducted to simulate the adsorption/desorption processes of gas molecules and the effect of specific surface area on sensory performance.
{"title":"Nanofiber-Textured Organic Semiconductor Films for Field-Effect Ammonia Sensors","authors":"Yao Tang;Qing Ma;Jie Lu;Xingyu Jiang;Lizhen Huang;Lifeng Chi;Litao Sun;Binghao Wang","doi":"10.1109/OJNANO.2022.3217255","DOIUrl":"10.1109/OJNANO.2022.3217255","url":null,"abstract":"Field-effect gas sensors, integrating the gas sensor and amplification transistor, exhibit excellent sensory performance. Here we report organic thin-film transistors (OTFTs) with nanofiber-textured semiconductor films that exhibit superior ammonia response compared to conventional OTFTs with uniform/flat semiconductor films. The introduce of insulating polymer additives (IPAs) facilitates the formation of semiconducting nanofiber during coating. The effects of IPAs, organic semiconductor/IPA blend ratios and solvents on OTFT-based sensory performance are studied. The results show that the use of SU8 as IPA and chloroform as solvent form intertwined semiconductor nanofibers (∼50 nm in diameter) at the bottom. The resulting OTFTs exhibit extraordinarily high sensitivities to ammonia, which reach 13676%/ppm (current) and 457%/ppm (turn-on voltage), respectively. Finite element analysis is conducted to simulate the adsorption/desorption processes of gas molecules and the effect of specific surface area on sensory performance.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"116-123"},"PeriodicalIF":1.7,"publicationDate":"2022-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9930634","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62888478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Precision DNA translocation control is critical for achieving high accuracy in single molecule-based DNA sequencing. In this report, we describe an atomic force microscopy (AFM) based method to linearize a double-stranded DNA strand during the translocation process and characterize the electrical properties of the moving DNA using a platinum (Pt) nanoelectrode gap. In this method, λDNAs were first deposited on a charged mica substrate surface and topographically scanned. A single DNA suitable for translocation was then identified and electrostatically attached to an AFM probe by pressing the probe tip down onto one end of the DNA strand without chemical functionalizations. Next, the DNA strand was lifted off the mica surface by the probe tip. The pulling force required to completely lift off the DNA agreed well with the theoretical DNA adhesion force to a charged mica surface. After liftoff, the captured DNA was translocated at varied speeds across the substrate and ultimately across the Pt nanoelectrode gap for electrical characterizations. Finally, finite element analysis of the effect of the translocating DNA on the conductivity of the nanoelectrode gap was conducted, validating the range of the gap current measured experimentally during the DNA translocation process.
{"title":"Single DNA Translocation and Electrical Characterization Based on Atomic Force Microscopy and Nanoelectrodes","authors":"Bo Ma;Jin-Woo Kim;Steve Tung","doi":"10.1109/OJNANO.2022.3217108","DOIUrl":"10.1109/OJNANO.2022.3217108","url":null,"abstract":"Precision DNA translocation control is critical for achieving high accuracy in single molecule-based DNA sequencing. In this report, we describe an atomic force microscopy (AFM) based method to linearize a double-stranded DNA strand during the translocation process and characterize the electrical properties of the moving DNA using a platinum (Pt) nanoelectrode gap. In this method, λDNAs were first deposited on a charged mica substrate surface and topographically scanned. A single DNA suitable for translocation was then identified and electrostatically attached to an AFM probe by pressing the probe tip down onto one end of the DNA strand without chemical functionalizations. Next, the DNA strand was lifted off the mica surface by the probe tip. The pulling force required to completely lift off the DNA agreed well with the theoretical DNA adhesion force to a charged mica surface. After liftoff, the captured DNA was translocated at varied speeds across the substrate and ultimately across the Pt nanoelectrode gap for electrical characterizations. Finally, finite element analysis of the effect of the translocating DNA on the conductivity of the nanoelectrode gap was conducted, validating the range of the gap current measured experimentally during the DNA translocation process.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"124-130"},"PeriodicalIF":1.7,"publicationDate":"2022-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10241429/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"9672550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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