Pub Date : 2023-01-10DOI: 10.1109/OJNANO.2023.3234042
NORMAN J. M. HORING
We examine the question “Can Dirac materials exist in a nondegenerate statistical state?,” deriving and employing an identity for the thermodynamic Grand Potential $Omega$ (per unit volume/area) in the low density nondegenerate statistical regime, relating it to the density $n$ as $Omega = -beta ^{-1} n$ ( $beta ^{-1} = kappa _{B} T$ is thermal energy, $kappa _{B}$ is the Boltzmann constant, and $T$ is Kelvin temperature). The implications of this identity for Dirac materials are explored. The identity is universally valid for all thermodynamic systems in equilibrium in the nondegenerate, low density statistical regime, irrespective of size, dimensionality or applied static fields. Phenomena that may contribute to the realization of such a nondegenerate statistical equilibrium state in Dirac materials are discussed.
{"title":"Dirac Materials and an Identity for the Grand Potential of the Nondegenerate Statistical Thermodynamic Regime","authors":"NORMAN J. M. HORING","doi":"10.1109/OJNANO.2023.3234042","DOIUrl":"https://doi.org/10.1109/OJNANO.2023.3234042","url":null,"abstract":"We examine the question “Can Dirac materials exist in a nondegenerate statistical state?,” deriving and employing an identity for the thermodynamic Grand Potential \u0000<inline-formula><tex-math>$Omega$</tex-math></inline-formula>\u0000 (per unit volume/area) in the low density nondegenerate statistical regime, relating it to the density \u0000<inline-formula><tex-math>$n$</tex-math></inline-formula>\u0000 as \u0000<inline-formula><tex-math>$Omega = -beta ^{-1} n$</tex-math> </inline-formula>\u0000 (\u0000<inline-formula><tex-math>$beta ^{-1} = kappa _{B} T$</tex-math></inline-formula>\u0000 is thermal energy, \u0000<inline-formula><tex-math>$kappa _{B}$</tex-math></inline-formula>\u0000 is the Boltzmann constant, and \u0000<inline-formula><tex-math>$T$</tex-math></inline-formula>\u0000 is Kelvin temperature). The implications of this identity for Dirac materials are explored. The identity is universally valid for all thermodynamic systems in equilibrium in the nondegenerate, low density statistical regime, irrespective of size, dimensionality or applied static fields. Phenomena that may contribute to the realization of such a nondegenerate statistical equilibrium state in Dirac materials are discussed.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"77-80"},"PeriodicalIF":1.7,"publicationDate":"2023-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/10014530.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3496406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Most greenhouse gases come from biological activities and industry which will lead to global warming and show an impact on human life. With the need of green transformation of the global economic structure and seeking for higher quality of human life, the detection and management of greenhouse gases, as well as most hazardous gases in the environment, are increasingly demanding. Applications in different fields require sensors that can detect gas volume fractions with magnitudes from 10–9 to 10–4. Greenhouse gas detection plays an important role both in the agriculture and industry field. In this review, we first summarize the mechanism of several common gas detectors used currently. Then, the advantages of nanostructured gas sensors are discussed. Finally, the applications of infrared gas sensors based on nanophotonic devices are described in detail. This review has been an outlook on the future development of infrared gas sensors based on nanophotonic devices.
{"title":"Greenhouse Gas Detection Based on Infrared Nanophotonic Devices","authors":"Chunhui Hao;Xiao Fu;Xiaoyong Jiang;Yutong Li;Juyi Sun;Haitao Wu;He Zhu;Qing Li;Yunhai Li;Zhangcheng Huang;Fang Zhong;Ting He;Jinshui Miao;Weida Hu","doi":"10.1109/OJNANO.2022.3233485","DOIUrl":"https://doi.org/10.1109/OJNANO.2022.3233485","url":null,"abstract":"Most greenhouse gases come from biological activities and industry which will lead to global warming and show an impact on human life. With the need of green transformation of the global economic structure and seeking for higher quality of human life, the detection and management of greenhouse gases, as well as most hazardous gases in the environment, are increasingly demanding. Applications in different fields require sensors that can detect gas volume fractions with magnitudes from 10–9 to 10–4. Greenhouse gas detection plays an important role both in the agriculture and industry field. In this review, we first summarize the mechanism of several common gas detectors used currently. Then, the advantages of nanostructured gas sensors are discussed. Finally, the applications of infrared gas sensors based on nanophotonic devices are described in detail. This review has been an outlook on the future development of infrared gas sensors based on nanophotonic devices.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"10-22"},"PeriodicalIF":1.7,"publicationDate":"2023-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/10009893.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3508119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.1109/OJNANO.2024.3362684
{"title":"2023 Index IEEE Open Journal of Nanotechnology Vol. 4","authors":"","doi":"10.1109/OJNANO.2024.3362684","DOIUrl":"https://doi.org/10.1109/OJNANO.2024.3362684","url":null,"abstract":"","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"1-6"},"PeriodicalIF":1.7,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10429774","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139710584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper presents an approach to evaluate capacitance developed by perforated membrane of RF MEMS switch with high accuracy. An analytical model is developed for both upstate and downstate of switch by including parasitic and fringing field capacitance in parallel plate capacitance model. The proposed analytical model includes the ligament efficiency term directly in the formula which reduce the efforts to calculate it individually for various perforation sizes. The capacitance analysis has been carried out by varying the physical parameters to optimize the switch dimensions and these analytical results are compared with the simulation results carried out by 3D FEM tool COMSOL multiphysics for validation. The proposed analytical model results are then compared with benchmark models to understand the efficiency of proposed model in estimating the up and downstate capacitances. The proposed analytical model proved to be good with less error percentage of 2.13% at upstate and 2.59% at downstate whereas the other benchmark models gives greater than 5% error. The switch is then fabricated using 4-mask surface micromachining process and experimental evaluation of capacitance at both upstate and downstate is carried out by DC probe station. Experimentally, the upstate capacitance is obtained as 37.4 fF and downstate as 2.43 pF and the analytical models exhibited low error percentage of 3.95% at upstate and 2.05% at downstate condition for µ = 0.5.
{"title":"Modelling, Fabrication and Testing of RF Micro-Electro-Mechanical-Systems Switch","authors":"Srinivasa Rao Karumuri;P. Ashok Kumar;Girija Sravani Kondavitee;Aime Lay-Ekuakille","doi":"10.1109/OJNANO.2022.3232182","DOIUrl":"https://doi.org/10.1109/OJNANO.2022.3232182","url":null,"abstract":"This paper presents an approach to evaluate capacitance developed by perforated membrane of RF MEMS switch with high accuracy. An analytical model is developed for both upstate and downstate of switch by including parasitic and fringing field capacitance in parallel plate capacitance model. The proposed analytical model includes the ligament efficiency term directly in the formula which reduce the efforts to calculate it individually for various perforation sizes. The capacitance analysis has been carried out by varying the physical parameters to optimize the switch dimensions and these analytical results are compared with the simulation results carried out by 3D FEM tool COMSOL multiphysics for validation. The proposed analytical model results are then compared with benchmark models to understand the efficiency of proposed model in estimating the up and downstate capacitances. The proposed analytical model proved to be good with less error percentage of 2.13% at upstate and 2.59% at downstate whereas the other benchmark models gives greater than 5% error. The switch is then fabricated using 4-mask surface micromachining process and experimental evaluation of capacitance at both upstate and downstate is carried out by DC probe station. Experimentally, the upstate capacitance is obtained as 37.4 fF and downstate as 2.43 pF and the analytical models exhibited low error percentage of 3.95% at upstate and 2.05% at downstate condition for µ = 0.5.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"81-94"},"PeriodicalIF":1.7,"publicationDate":"2022-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/09999329.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3515039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-23DOI: 10.1109/OJNANO.2022.3224652
Attila Bonyar;Brajesh Kumar Kaushik;James E. Morris;Markondeyaraj Pulugurtha
The papers in this special section focus on nanopackaging. It begins with three reviews of diverse nanoscale technologies and then moves on to research papers focused primarily on nanomaterials for on-chip interconnect and noise abatement.
{"title":"Guest Editorial: Nanopackaging Part II","authors":"Attila Bonyar;Brajesh Kumar Kaushik;James E. Morris;Markondeyaraj Pulugurtha","doi":"10.1109/OJNANO.2022.3224652","DOIUrl":"10.1109/OJNANO.2022.3224652","url":null,"abstract":"The papers in this special section focus on nanopackaging. It begins with three reviews of diverse nanoscale technologies and then moves on to research papers focused primarily on nanomaterials for on-chip interconnect and noise abatement.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"166-168"},"PeriodicalIF":1.7,"publicationDate":"2022-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9997810","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62889644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-22DOI: 10.1109/OJNANO.2022.3231436
Shipra Saini;Namita Bindal;Brajesh Kumar Kaushik
Magnetic anisotropy energy (MAE) of two-dimensional (2D) magnetic materials is the key parameter for designing next-generation spintronic devices. Here, using first-principle calculations based on density functional theory (DFT), the variance in MAE and other magnetic properties is observed for transition metal (TM) doped bismuth monolayer (bismuthene). This doped system shows a significant modulation in the magnetic moment, MAE, Curie temperature Tc , and charge transfer. However, Mn-doped bismuthene exhibits half-metallicity with a maximum magnetic moment of 4μB (Bohr magneton) that is 17% higher than Fe-doped bismuthene. The maximum MAE extracted for Mn-doped bismuthene is 27.51% higher than the Ti-doped system. On the basis of these findings, the electronic and magnetic characteristics of Mn-doped bismuthene (Mn-Bi) and monolayer CrI 3 van der Waals (vdW) heterostructures are also investigated. In Mn-Bi/CrI 3 van der Waals heterostructure, the half-metal Mn-Bi can induce the half-metallicity in CrI 3 through charge transfer. Compared to other doped systems, Mn-Bi presents the most favorable magnetic properties. Thus, Mn-Bi/CrI 3 heterostructure paves the path for the development of spintronic devices.
二维磁性材料的磁各向异性能(MAE)是设计下一代自旋电子器件的关键参数。本文利用基于密度泛函理论(DFT)的第一性原理计算，观察了过渡金属(TM)掺杂铋单层(bismuthene)的MAE和其他磁性能的变化。该掺杂体系在磁矩、MAE、居里温度Tc和电荷转移方面表现出明显的调制作用。mn掺杂铋具有半金属性，最大磁矩为4μB(玻尔磁子)，比fe掺杂铋高17%。mn掺杂铋体系的最大MAE提取率比ti掺杂体系高27.51%。在此基础上，研究了mn掺杂铋(Mn-Bi)和单层CrI3 van der Waals (vdW)异质结构的电子和磁特性。在Mn-Bi/CrI3范德华异质结构中，半金属Mn-Bi可以通过电荷转移诱导CrI3的半金属丰度。与其他掺杂体系相比，Mn-Bi表现出最有利的磁性能。因此，Mn-Bi/CrI3异质结构为自旋电子器件的发展铺平了道路。
{"title":"Transition Metal Doped Bismuthene and Mn-Bi/CrI3 Heterostructure for High Anisotropy Energy and Half-Metallicity","authors":"Shipra Saini;Namita Bindal;Brajesh Kumar Kaushik","doi":"10.1109/OJNANO.2022.3231436","DOIUrl":"https://doi.org/10.1109/OJNANO.2022.3231436","url":null,"abstract":"Magnetic anisotropy energy (MAE) of two-dimensional (2D) magnetic materials is the key parameter for designing next-generation spintronic devices. Here, using first-principle calculations based on density functional theory (DFT), the variance in MAE and other magnetic properties is observed for transition metal (TM) doped bismuth monolayer (bismuthene). This doped system shows a significant modulation in the magnetic moment, MAE, Curie temperature \u0000<italic>T<sub>c</sub></i>\u0000, and charge transfer. However, Mn-doped bismuthene exhibits half-metallicity with a maximum magnetic moment of 4μB (Bohr magneton) that is 17% higher than Fe-doped bismuthene. The maximum MAE extracted for Mn-doped bismuthene is 27.51% higher than the Ti-doped system. On the basis of these findings, the electronic and magnetic characteristics of Mn-doped bismuthene (Mn-Bi) and monolayer CrI\u0000<sub>3</sub>\u0000 van der Waals (vdW) heterostructures are also investigated. In Mn-Bi/CrI\u0000<sub>3</sub>\u0000 van der Waals heterostructure, the half-metal Mn-Bi can induce the half-metallicity in CrI\u0000<sub>3</sub>\u0000 through charge transfer. Compared to other doped systems, Mn-Bi presents the most favorable magnetic properties. Thus, Mn-Bi/CrI\u0000<sub>3</sub>\u0000 heterostructure paves the path for the development of spintronic devices.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"1-9"},"PeriodicalIF":1.7,"publicationDate":"2022-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/09996563.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3507987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-14DOI: 10.1109/OJNANO.2022.3224346
Masaharu Shiratani;John P. Verboncoeur;Jong-Shinn Wu
The papers in this special section shed light on recent progresses on nanoscience and nanotechnology based on low pressure plasma and atmospheric plasma, whereas it also suggests directions for future research.
{"title":"Guest Editorial: Emerging Plasma Nanotechnologies","authors":"Masaharu Shiratani;John P. Verboncoeur;Jong-Shinn Wu","doi":"10.1109/OJNANO.2022.3224346","DOIUrl":"10.1109/OJNANO.2022.3224346","url":null,"abstract":"The papers in this special section shed light on recent progresses on nanoscience and nanotechnology based on low pressure plasma and atmospheric plasma, whereas it also suggests directions for future research.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"131-132"},"PeriodicalIF":1.7,"publicationDate":"2022-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9985437","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62888791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-05DOI: 10.1109/OJNANO.2022.3226603
Shuoyan Liu;Bing Xue;Wenyuan Yan;Alina Y. Rwei;Changsheng Wu
With a growing focus on properties of softness, miniaturization, and intelligence, extensive research has been focusing on constructing wearable electronic devices facilitating comfort, wearable health monitoring and diagnosis. Among recent progress in the development of wearable bioelectronics, wearable near-infrared spectroscopy (NIRS) devices demonstrate wide implementation possibilities in multiple health monitoring scenarios. Throughout the years, multiple design strategies have assisted in developing wearable NIRS devices with high wearing comfortability and miniaturized size. This review summarizes the principle of NIRS technology, recent advances in design strategies towards soft, wearable, miniaturized NIRS devices, and the future potential development directions. Based on the discussion of different design strategies, including modular device design, flexible hybrid electronics, and materials innovation, we also pinpoint some development directions for wearable NIRS. The reviewed and proposed research efforts may enhance the applicability and capability of NIRS as an important technology for digital health.
{"title":"Recent Advances and Design Strategies Towards Wearable Near-Infrared Spectroscopy","authors":"Shuoyan Liu;Bing Xue;Wenyuan Yan;Alina Y. Rwei;Changsheng Wu","doi":"10.1109/OJNANO.2022.3226603","DOIUrl":"https://doi.org/10.1109/OJNANO.2022.3226603","url":null,"abstract":"With a growing focus on properties of softness, miniaturization, and intelligence, extensive research has been focusing on constructing wearable electronic devices facilitating comfort, wearable health monitoring and diagnosis. Among recent progress in the development of wearable bioelectronics, wearable near-infrared spectroscopy (NIRS) devices demonstrate wide implementation possibilities in multiple health monitoring scenarios. Throughout the years, multiple design strategies have assisted in developing wearable NIRS devices with high wearing comfortability and miniaturized size. This review summarizes the principle of NIRS technology, recent advances in design strategies towards soft, wearable, miniaturized NIRS devices, and the future potential development directions. Based on the discussion of different design strategies, including modular device design, flexible hybrid electronics, and materials innovation, we also pinpoint some development directions for wearable NIRS. The reviewed and proposed research efforts may enhance the applicability and capability of NIRS as an important technology for digital health.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"25-35"},"PeriodicalIF":1.7,"publicationDate":"2022-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/09969912.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3491642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-02DOI: 10.1109/OJNANO.2022.3223413
Orestis Liolis;Vassilios A. Mardiris;Ioannis G. Karafyllidis;Sorin Cotofana;Georgios Ch. Sirakoulis
Quantum-dot Cellular Automata (QCA) provide very high scale integration potential, very high switching frequency, and have extremely low power demands, which make the QCA technology quite attractive for the design and implementation of large-scale, high-performance nanoelectronic circuits. However, state-of-the-art QCA circuit designs were not derived by following a set of universal design rules, as is the case of CMOS circuits, and, as a result, it is either impossible or very difficult to combine QCA circuit blocks in effective large-scale circuits. In this paper, we introduce a novel automated design methodology, which builds upon a QCA specific universal design rules set. The proposed methodology assumes the availability of a generic QCA crossbar architecture and provides the means to customize it in order to implement any given logic function. The programming principles and the flow of the proposed automated design tool for crossbar QCA circuits are described analytically and we apply the proposed automated design method for the design of both combinatorial and sequential circuits. The obtained designs demonstrate that the proposed method is functional, easy to use, and provides the desired QCA circuit design unification.
{"title":"Methodology for Automated Design of Quantum-Dot Cellular Automata Circuits","authors":"Orestis Liolis;Vassilios A. Mardiris;Ioannis G. Karafyllidis;Sorin Cotofana;Georgios Ch. Sirakoulis","doi":"10.1109/OJNANO.2022.3223413","DOIUrl":"10.1109/OJNANO.2022.3223413","url":null,"abstract":"Quantum-dot Cellular Automata (QCA) provide very high scale integration potential, very high switching frequency, and have extremely low power demands, which make the QCA technology quite attractive for the design and implementation of large-scale, high-performance nanoelectronic circuits. However, state-of-the-art QCA circuit designs were not derived by following a set of universal design rules, as is the case of CMOS circuits, and, as a result, it is either impossible or very difficult to combine QCA circuit blocks in effective large-scale circuits. In this paper, we introduce a novel automated design methodology, which builds upon a QCA specific universal design rules set. The proposed methodology assumes the availability of a generic QCA crossbar architecture and provides the means to customize it in order to implement any given logic function. The programming principles and the flow of the proposed automated design tool for crossbar QCA circuits are described analytically and we apply the proposed automated design method for the design of both combinatorial and sequential circuits. The obtained designs demonstrate that the proposed method is functional, easy to use, and provides the desired QCA circuit design unification.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"162-171"},"PeriodicalIF":1.7,"publicationDate":"2022-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9968311","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62888904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-25DOI: 10.1109/OJNANO.2022.3224757
Chenglan Ouyang;Di Liu;Ke He;Jiahao Kang
A touch screen that combines a display and a touch sensor array is a critical component enabling human-machine interaction. The progress made in flexible touch screen technologies also vigorously drives the development and application of flexible electronics in various fields. Over the past decade, there have been enormous research and development efforts on new structures and materials for touch sensors in flexible displays, especially for flexible organic light-emitting diode (OLED) displays. Herein, this review discusses the mechanics and structures of flexible touch screens, including their benefits and drawbacks. The recent advances in the structures and electrode materials (e.g., ITO, silver nanowires, metal mesh, graphene, carbon nanotubes, and conductive polymers) are reviewed, and the challenges and prospects of these technologies are also explored.
{"title":"Recent Advances in Touch Sensors for Flexible Displays","authors":"Chenglan Ouyang;Di Liu;Ke He;Jiahao Kang","doi":"10.1109/OJNANO.2022.3224757","DOIUrl":"https://doi.org/10.1109/OJNANO.2022.3224757","url":null,"abstract":"A touch screen that combines a display and a touch sensor array is a critical component enabling human-machine interaction. The progress made in flexible touch screen technologies also vigorously drives the development and application of flexible electronics in various fields. Over the past decade, there have been enormous research and development efforts on new structures and materials for touch sensors in flexible displays, especially for flexible organic light-emitting diode (OLED) displays. Herein, this review discusses the mechanics and structures of flexible touch screens, including their benefits and drawbacks. The recent advances in the structures and electrode materials (e.g., ITO, silver nanowires, metal mesh, graphene, carbon nanotubes, and conductive polymers) are reviewed, and the challenges and prospects of these technologies are also explored.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"36-46"},"PeriodicalIF":1.7,"publicationDate":"2022-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/09964079.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3484047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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