Pub Date : 2022-11-10DOI: 10.1109/OJNANO.2022.3221141
Ashish Singh;Brajesh Kumar Kaushik;Rohit Dhiman
The sub-threshold regime is suited for applications requiring ultra-low power consumption with low to medium frequency (tens to hundreds of MHz) of operation. Therefore, this paper presents electrical modeling and comprehensive analysis of copper-carbon nanotube (Cu-CNT) composite interconnects for sub-threshold circuit design. At lower operating frequencies, the effective complex conductivity of Cu-CNT composites in the nanoscale is formulated by developing an analytical model. Based on the proposed equivalent single conductor model, the frequency-dependent resistance and inductance of composite interconnects are computed. Finally, the sub-threshold crosstalk effect, transfer gain, and Nyquist stability of coupled Cu-CNT composite interconnect are analyzed using ABCD matrix approach.
{"title":"Modeling and Analysis of Cu-Carbon Nanotube Composites for Sub-Threshold Interconnects","authors":"Ashish Singh;Brajesh Kumar Kaushik;Rohit Dhiman","doi":"10.1109/OJNANO.2022.3221141","DOIUrl":"10.1109/OJNANO.2022.3221141","url":null,"abstract":"The sub-threshold regime is suited for applications requiring ultra-low power consumption with low to medium frequency (tens to hundreds of MHz) of operation. Therefore, this paper presents electrical modeling and comprehensive analysis of copper-carbon nanotube (Cu-CNT) composite interconnects for sub-threshold circuit design. At lower operating frequencies, the effective complex conductivity of Cu-CNT composites in the nanoscale is formulated by developing an analytical model. Based on the proposed equivalent single conductor model, the frequency-dependent resistance and inductance of composite interconnects are computed. Finally, the sub-threshold crosstalk effect, transfer gain, and Nyquist stability of coupled Cu-CNT composite interconnect are analyzed using \u0000<italic>ABCD</i>\u0000 matrix approach.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"236-243"},"PeriodicalIF":1.7,"publicationDate":"2022-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9944876","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62888500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
As electronic devices get smaller, more portable, and smarter, a new approach of realizing electronics in thin, soft, and even stretchable style that could be worn and attached to the skin, which is called skin electronics, has emerged and attracted much attention. To achieve well compliance, extend the maximum stretchability, promote the comfortability of wearing, and make the most use of the skin electronics, researchers are making efforts in different aspects. In this article, we summarized the recent advances in categories of materials science, design strategies and novel applications. Examples of skin electronics using various functional materials including piezoelectric, thermoelectric, etc., and soft conductive materials including PEDOT: PSS-based conductive polymer, carbon nanomaterials, metal-based materials and hydrogels were given. Different mechanics design strategies for enhancing mechanical performance and comfortability design strategies for better wearing experience were introduced. Lastly, practical applications of skin electronics in fields of smart healthcare and human-machine interface were discussed. Research focused on these aspects all boosted the development of skin electronics in different dimensions, with which combined together may help skin electronics take a leap into truly ubiquitous use in our daily life.
{"title":"Recent Advances in Materials, Designs and Applications of Skin Electronics","authors":"Kuanming Yao;Yawen Yang;Pengcheng Wu;Guangyao Zhao;Lidai Wang;Xinge Yu","doi":"10.1109/OJNANO.2022.3218960","DOIUrl":"https://doi.org/10.1109/OJNANO.2022.3218960","url":null,"abstract":"As electronic devices get smaller, more portable, and smarter, a new approach of realizing electronics in thin, soft, and even stretchable style that could be worn and attached to the skin, which is called skin electronics, has emerged and attracted much attention. To achieve well compliance, extend the maximum stretchability, promote the comfortability of wearing, and make the most use of the skin electronics, researchers are making efforts in different aspects. In this article, we summarized the recent advances in categories of materials science, design strategies and novel applications. Examples of skin electronics using various functional materials including piezoelectric, thermoelectric, etc., and soft conductive materials including PEDOT: PSS-based conductive polymer, carbon nanomaterials, metal-based materials and hydrogels were given. Different mechanics design strategies for enhancing mechanical performance and comfortability design strategies for better wearing experience were introduced. Lastly, practical applications of skin electronics in fields of smart healthcare and human-machine interface were discussed. Research focused on these aspects all boosted the development of skin electronics in different dimensions, with which combined together may help skin electronics take a leap into truly ubiquitous use in our daily life.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"55-70"},"PeriodicalIF":1.7,"publicationDate":"2022-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/09935291.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3518260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-28DOI: 10.1109/OJNANO.2022.3217806
Seiji Samukawa
Developments in plasma process technology have led to innovative advances in the miniaturization and integration of semiconductor devices. However, when semiconductor devices are utilized in the nanoscale domain, defects or damage related to charged particles and ultraviolet (UV) rays emitted from the plasma can emerge, resulting in degraded characteristics for nano-devices. It is thus imperative to come up with a method that suppresses or controls the charge accumulation and ultraviolet (UV) damage in plasma processing. This paper reviews our work on a neutral beam process that suppresses the formation of defects at the atomic layer level on the processed surface, which makes it possible for ideal surface chemical reactions to occur at room temperature. This is vital for the creation of innovative nano-devices in the future.
{"title":"Emerging Plasma Nanotechnology","authors":"Seiji Samukawa","doi":"10.1109/OJNANO.2022.3217806","DOIUrl":"10.1109/OJNANO.2022.3217806","url":null,"abstract":"Developments in plasma process technology have led to innovative advances in the miniaturization and integration of semiconductor devices. However, when semiconductor devices are utilized in the nanoscale domain, defects or damage related to charged particles and ultraviolet (UV) rays emitted from the plasma can emerge, resulting in degraded characteristics for nano-devices. It is thus imperative to come up with a method that suppresses or controls the charge accumulation and ultraviolet (UV) damage in plasma processing. This paper reviews our work on a neutral beam process that suppresses the formation of defects at the atomic layer level on the processed surface, which makes it possible for ideal surface chemical reactions to occur at room temperature. This is vital for the creation of innovative nano-devices in the future.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"133-148"},"PeriodicalIF":1.7,"publicationDate":"2022-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9931942","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62888489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-26DOI: 10.1109/OJNANO.2022.3217255
Yao Tang;Qing Ma;Jie Lu;Xingyu Jiang;Lizhen Huang;Lifeng Chi;Litao Sun;Binghao Wang
Field-effect gas sensors, integrating the gas sensor and amplification transistor, exhibit excellent sensory performance. Here we report organic thin-film transistors (OTFTs) with nanofiber-textured semiconductor films that exhibit superior ammonia response compared to conventional OTFTs with uniform/flat semiconductor films. The introduce of insulating polymer additives (IPAs) facilitates the formation of semiconducting nanofiber during coating. The effects of IPAs, organic semiconductor/IPA blend ratios and solvents on OTFT-based sensory performance are studied. The results show that the use of SU8 as IPA and chloroform as solvent form intertwined semiconductor nanofibers (∼50 nm in diameter) at the bottom. The resulting OTFTs exhibit extraordinarily high sensitivities to ammonia, which reach 13676%/ppm (current) and 457%/ppm (turn-on voltage), respectively. Finite element analysis is conducted to simulate the adsorption/desorption processes of gas molecules and the effect of specific surface area on sensory performance.
{"title":"Nanofiber-Textured Organic Semiconductor Films for Field-Effect Ammonia Sensors","authors":"Yao Tang;Qing Ma;Jie Lu;Xingyu Jiang;Lizhen Huang;Lifeng Chi;Litao Sun;Binghao Wang","doi":"10.1109/OJNANO.2022.3217255","DOIUrl":"10.1109/OJNANO.2022.3217255","url":null,"abstract":"Field-effect gas sensors, integrating the gas sensor and amplification transistor, exhibit excellent sensory performance. Here we report organic thin-film transistors (OTFTs) with nanofiber-textured semiconductor films that exhibit superior ammonia response compared to conventional OTFTs with uniform/flat semiconductor films. The introduce of insulating polymer additives (IPAs) facilitates the formation of semiconducting nanofiber during coating. The effects of IPAs, organic semiconductor/IPA blend ratios and solvents on OTFT-based sensory performance are studied. The results show that the use of SU8 as IPA and chloroform as solvent form intertwined semiconductor nanofibers (∼50 nm in diameter) at the bottom. The resulting OTFTs exhibit extraordinarily high sensitivities to ammonia, which reach 13676%/ppm (current) and 457%/ppm (turn-on voltage), respectively. Finite element analysis is conducted to simulate the adsorption/desorption processes of gas molecules and the effect of specific surface area on sensory performance.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"116-123"},"PeriodicalIF":1.7,"publicationDate":"2022-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9930634","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62888478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-25DOI: 10.1109/OJNANO.2022.3217108
Bo Ma;Jin-Woo Kim;Steve Tung
Precision DNA translocation control is critical for achieving high accuracy in single molecule-based DNA sequencing. In this report, we describe an atomic force microscopy (AFM) based method to linearize a double-stranded DNA strand during the translocation process and characterize the electrical properties of the moving DNA using a platinum (Pt) nanoelectrode gap. In this method, λDNAs were first deposited on a charged mica substrate surface and topographically scanned. A single DNA suitable for translocation was then identified and electrostatically attached to an AFM probe by pressing the probe tip down onto one end of the DNA strand without chemical functionalizations. Next, the DNA strand was lifted off the mica surface by the probe tip. The pulling force required to completely lift off the DNA agreed well with the theoretical DNA adhesion force to a charged mica surface. After liftoff, the captured DNA was translocated at varied speeds across the substrate and ultimately across the Pt nanoelectrode gap for electrical characterizations. Finally, finite element analysis of the effect of the translocating DNA on the conductivity of the nanoelectrode gap was conducted, validating the range of the gap current measured experimentally during the DNA translocation process.
{"title":"Single DNA Translocation and Electrical Characterization Based on Atomic Force Microscopy and Nanoelectrodes","authors":"Bo Ma;Jin-Woo Kim;Steve Tung","doi":"10.1109/OJNANO.2022.3217108","DOIUrl":"10.1109/OJNANO.2022.3217108","url":null,"abstract":"Precision DNA translocation control is critical for achieving high accuracy in single molecule-based DNA sequencing. In this report, we describe an atomic force microscopy (AFM) based method to linearize a double-stranded DNA strand during the translocation process and characterize the electrical properties of the moving DNA using a platinum (Pt) nanoelectrode gap. In this method, λDNAs were first deposited on a charged mica substrate surface and topographically scanned. A single DNA suitable for translocation was then identified and electrostatically attached to an AFM probe by pressing the probe tip down onto one end of the DNA strand without chemical functionalizations. Next, the DNA strand was lifted off the mica surface by the probe tip. The pulling force required to completely lift off the DNA agreed well with the theoretical DNA adhesion force to a charged mica surface. After liftoff, the captured DNA was translocated at varied speeds across the substrate and ultimately across the Pt nanoelectrode gap for electrical characterizations. Finally, finite element analysis of the effect of the translocating DNA on the conductivity of the nanoelectrode gap was conducted, validating the range of the gap current measured experimentally during the DNA translocation process.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"124-130"},"PeriodicalIF":1.7,"publicationDate":"2022-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10241429/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"9672550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Organic electrochemical transistors (OECTs), as one of the most promising sensing techniques, have shown various advantages compared to traditional means, which include ultra-high sensitivity, low driving voltage, and excellent biocompatibility for different bioelectrical and biochemical sensing. Moreover, to fully unleash the potential of OECT sensors, integrated sensing systems, especially OECT-based sensing arrays, are widely investigated due to spatiotemporal resolution, mechanical flexibility, high optical transparency, low power dissipation, and ease of fabrication. These advantages are attributed to the unique working mechanism of OECT, novel mixed ionic-electronic (semi)conductors, adaptable device geometry/structure, etc. In this review, advances in OECT-based sensing systems are systematically summarized, with a focus on the OECT-based sensing array. Furthermore, perspectives, concerning stability, cut-off frequency, integrating density, and power dissipation, are discussed based on recent studies on OECTs and their relevant sensor arrays. Last, a summary and an outlook of this field are provided.
{"title":"Integrated Sensing Arrays Based on Organic Electrochemical Transistors","authors":"Jinjie Wen;Jie Xu;Wei Huang;Cong Chen;Libing Bai;Yuhua Cheng","doi":"10.1109/OJNANO.2022.3215135","DOIUrl":"10.1109/OJNANO.2022.3215135","url":null,"abstract":"Organic electrochemical transistors (OECTs), as one of the most promising sensing techniques, have shown various advantages compared to traditional means, which include ultra-high sensitivity, low driving voltage, and excellent biocompatibility for different bioelectrical and biochemical sensing. Moreover, to fully unleash the potential of OECT sensors, integrated sensing systems, especially OECT-based sensing arrays, are widely investigated due to spatiotemporal resolution, mechanical flexibility, high optical transparency, low power dissipation, and ease of fabrication. These advantages are attributed to the unique working mechanism of OECT, novel mixed ionic-electronic (semi)conductors, adaptable device geometry/structure, etc. In this review, advances in OECT-based sensing systems are systematically summarized, with a focus on the OECT-based sensing array. Furthermore, perspectives, concerning stability, cut-off frequency, integrating density, and power dissipation, are discussed based on recent studies on OECTs and their relevant sensor arrays. Last, a summary and an outlook of this field are provided.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"101-115"},"PeriodicalIF":1.7,"publicationDate":"2022-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9921324","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62888432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-09-28DOI: 10.1109/OJNANO.2022.3209995
Shota Nunomura;Kunihiro Kamataki;Takehiko Nagai;Tatsuya Misawa;Shinji Kawai;Kosuke Takenaka;Giichiro Uchida;Kazunori Koga
Plasma nanotechnology is widely used for nanoscale etching, dopant implantation and thin-film deposition for state-of-the-art semiconductor devices. Such a plasma nanotechnology has another interesting aspect of synthesizing nanoparticles, in a controlled manner of atomic composition, structure and those size. Here, we present the polymerization and growth of silicon nanoparticles from a molecular level to 10 nm-particles in hydrogen diluted silane plasmas. The polymerization and growth are experimentally studied using various plasma diagnostic tools. The results indicate that nanoparticles are rapidly formed via gas-phase reactions in a low-density plasma comprising high-energy electrons. The growth kinetics and the modification of plasma properties are discussed in terms of gas-phase reactions, charging and coagulation of nanoparticles.
{"title":"Plasma Synthesis of Silicon Nanoparticles: From Molecules to Clusters and Nanoparticle Growth","authors":"Shota Nunomura;Kunihiro Kamataki;Takehiko Nagai;Tatsuya Misawa;Shinji Kawai;Kosuke Takenaka;Giichiro Uchida;Kazunori Koga","doi":"10.1109/OJNANO.2022.3209995","DOIUrl":"10.1109/OJNANO.2022.3209995","url":null,"abstract":"Plasma nanotechnology is widely used for nanoscale etching, dopant implantation and thin-film deposition for state-of-the-art semiconductor devices. Such a plasma nanotechnology has another interesting aspect of synthesizing nanoparticles, in a controlled manner of atomic composition, structure and those size. Here, we present the polymerization and growth of silicon nanoparticles from a molecular level to 10 nm-particles in hydrogen diluted silane plasmas. The polymerization and growth are experimentally studied using various plasma diagnostic tools. The results indicate that nanoparticles are rapidly formed via gas-phase reactions in a low-density plasma comprising high-energy electrons. The growth kinetics and the modification of plasma properties are discussed in terms of gas-phase reactions, charging and coagulation of nanoparticles.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"94-100"},"PeriodicalIF":1.7,"publicationDate":"2022-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9904822","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62888426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Spintronics is one of the emerging fields for next-generation low power, high endurance, non-volatile, and area efficient memory technology. Spin torque transfer (STT), spin orbit torque (SOT), and electric field assisted switching mechanisms have been used to switch magnetization in various spintronic devices. However, their operation speed is fundamentally limited by the spin precession time that typically ranges in 10–400 ps. Such a time constraint severely limits the possible operation of these devices in high-speed systems. Optical switching using ultrashort laser pulses, on the other hand, is able to achieve sub-picosecond switching operation in magnetic tunnel junctions (MTJs). In this paper, all optically switched (AOS) MTJ has been used to design high speed and low power hybrid MTJ/CMOS based logic circuits such as AND/NAND, XOR/XNOR, and full adder. Owing to the ultra-fast switching operation of AOS-MTJ, the circuit level results show that the energy and speed of AOS-MTJ based logic circuits are improved by 85% and 97%, respectively, when compared to STT based circuits. In comparison to SOT based designs, the proposed logic circuits show 10% and 91% improvement in energy efficiency and speed, respectively.
{"title":"Hybrid Spintronics/CMOS Logic Circuits Using All-Optical-Enabled Magnetic Tunnel Junction","authors":"Surya Narain Dikshit;Arshid Nisar;Seema Dhull;Namita Bindal;Brajesh Kumar Kaushik","doi":"10.1109/OJNANO.2022.3188768","DOIUrl":"10.1109/OJNANO.2022.3188768","url":null,"abstract":"Spintronics is one of the emerging fields for next-generation low power, high endurance, non-volatile, and area efficient memory technology. Spin torque transfer (STT), spin orbit torque (SOT), and electric field assisted switching mechanisms have been used to switch magnetization in various spintronic devices. However, their operation speed is fundamentally limited by the spin precession time that typically ranges in 10–400 ps. Such a time constraint severely limits the possible operation of these devices in high-speed systems. Optical switching using ultrashort laser pulses, on the other hand, is able to achieve sub-picosecond switching operation in magnetic tunnel junctions (MTJs). In this paper, all optically switched (AOS) MTJ has been used to design high speed and low power hybrid MTJ/CMOS based logic circuits such as AND/NAND, XOR/XNOR, and full adder. Owing to the ultra-fast switching operation of AOS-MTJ, the circuit level results show that the energy and speed of AOS-MTJ based logic circuits are improved by 85% and 97%, respectively, when compared to STT based circuits. In comparison to SOT based designs, the proposed logic circuits show 10% and 91% improvement in energy efficiency and speed, respectively.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"85-93"},"PeriodicalIF":1.7,"publicationDate":"2022-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9815875","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62888354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The rapid transistor scaling and threshold voltage reduction pose several challenges such as high leakage current and reliability issues. These challenges also make VLSI circuits more susceptible to soft-errors, particularly when subjected to harsh environmental conditions. Hybrid spintronic/CMOS technology has emerged as one of the promising techniques to achieve low leakage power and non-volatility. Moreover, the spintronic memories are inherently resistant to the radiation effects such as heavy-ion irradiation and total ionizing dose. However, its CMOS peripheral circuitry is more susceptible to radiation-induced single-event upset (SEU) and double-node upset (DNU). In this paper, a new radiation-hardened read circuit for SOT magnetic random access memory (MRAM) on 45nm technology has been presented. The proposed circuit is highly resistant to all the probable SEUs and DNUs when compared to the previously reported designs. The results show that it can tolerate 4.5X, 11X, 9X, and 10.5X more critical charge as compared to the cross-coupled CMOS transistor, 11T, 13T, and 11T radiation hardened circuits, respectively. Moreover, the recovery time of the proposed circuit is improved by 20% when compared to cross-coupled CMOS transistor circuits.
{"title":"Novel Radiation Hardened SOT-MRAM Read Circuit for Multi-Node Upset Tolerance","authors":"Alok Kumar Shukla;Seema Dhull;Arshid Nisar;Sandeep Soni;Namita Bindal;Brajesh Kumar Kaushik","doi":"10.1109/OJNANO.2022.3181040","DOIUrl":"10.1109/OJNANO.2022.3181040","url":null,"abstract":"The rapid transistor scaling and threshold voltage reduction pose several challenges such as high leakage current and reliability issues. These challenges also make VLSI circuits more susceptible to soft-errors, particularly when subjected to harsh environmental conditions. Hybrid spintronic/CMOS technology has emerged as one of the promising techniques to achieve low leakage power and non-volatility. Moreover, the spintronic memories are inherently resistant to the radiation effects such as heavy-ion irradiation and total ionizing dose. However, its CMOS peripheral circuitry is more susceptible to radiation-induced single-event upset (SEU) and double-node upset (DNU). In this paper, a new radiation-hardened read circuit for SOT magnetic random access memory (MRAM) on 45nm technology has been presented. The proposed circuit is highly resistant to all the probable SEUs and DNUs when compared to the previously reported designs. The results show that it can tolerate 4.5X, 11X, 9X, and 10.5X more critical charge as compared to the cross-coupled CMOS transistor, 11T, 13T, and 11T radiation hardened circuits, respectively. Moreover, the recovery time of the proposed circuit is improved by 20% when compared to cross-coupled CMOS transistor circuits.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"78-84"},"PeriodicalIF":1.7,"publicationDate":"2022-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9791114","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62888283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Spintronic-based computing-in-memory (CiM) architecture has emerged as one of the efficient solutions to counter the latency/bandwidth bottleneck of conventional von-Neumann architecture. However, computation within a small area while achieving low power consumption still remains a challenge. Multi-bit spintronic storage device is a suitable solution to improve the integration density of such architectures. This paper focuses on using spin-transfer torque (STT)/spin-orbit torque (SOT) based hybrid three-level cell (TLC) in CiM application for implementing logic circuits such as AND, XOR, and magnetic full adder (MFA). Moreover, the performance of the STT/SOT-TLC-based MFA is compared with other full adder designs. The results show that the proposed MFA is 75% more area-efficient in comparison to two-bit STT and SOT-based designs, and 50% more area-efficient in comparison to differential spin hall effect (DSHE) based designs
基于自旋电子学的内存计算(CiM)体系结构已成为克服传统冯-诺伊曼体系结构延迟/带宽瓶颈的有效解决方案之一。然而，在小范围内实现低功耗的计算仍然是一个挑战。多比特自旋电子存储器件是提高此类体系结构集成密度的合适解决方案。本文重点研究了基于自旋-传递扭矩(STT)/自旋-轨道扭矩(SOT)的混合三能级单元(TLC)在CiM中的应用，用于实现与、异或和磁全加法器(MFA)等逻辑电路。此外，将基于STT/ sot - tlc的MFA与其他全加法器设计的性能进行了比较。结果表明，与基于2位STT和sot的设计相比，所提出的MFA的面积效率提高了75%，与基于差分自旋霍尔效应(DSHE)的设计相比，面积效率提高了50%
{"title":"Area Efficient Computing-in-Memory Architecture Using STT/SOT Hybrid Three Level Cell","authors":"Seema Dhull;Arshid Nisar;Rakesh Bhat;Brajesh Kumar Kaushik","doi":"10.1109/OJNANO.2022.3166959","DOIUrl":"10.1109/OJNANO.2022.3166959","url":null,"abstract":"Spintronic-based computing-in-memory (CiM) architecture has emerged as one of the efficient solutions to counter the latency/bandwidth bottleneck of conventional von-Neumann architecture. However, computation within a small area while achieving low power consumption still remains a challenge. Multi-bit spintronic storage device is a suitable solution to improve the integration density of such architectures. This paper focuses on using spin-transfer torque (STT)/spin-orbit torque (SOT) based hybrid three-level cell (TLC) in CiM application for implementing logic circuits such as AND, XOR, and magnetic full adder (MFA). Moreover, the performance of the STT/SOT-TLC-based MFA is compared with other full adder designs. The results show that the proposed MFA is 75% more area-efficient in comparison to two-bit STT and SOT-based designs, and 50% more area-efficient in comparison to differential spin hall effect (DSHE) based designs","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"45-51"},"PeriodicalIF":1.7,"publicationDate":"2022-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9756330","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62887858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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