With a growing focus on properties of softness, miniaturization, and intelligence, extensive research has been focusing on constructing wearable electronic devices facilitating comfort, wearable health monitoring and diagnosis. Among recent progress in the development of wearable bioelectronics, wearable near-infrared spectroscopy (NIRS) devices demonstrate wide implementation possibilities in multiple health monitoring scenarios. Throughout the years, multiple design strategies have assisted in developing wearable NIRS devices with high wearing comfortability and miniaturized size. This review summarizes the principle of NIRS technology, recent advances in design strategies towards soft, wearable, miniaturized NIRS devices, and the future potential development directions. Based on the discussion of different design strategies, including modular device design, flexible hybrid electronics, and materials innovation, we also pinpoint some development directions for wearable NIRS. The reviewed and proposed research efforts may enhance the applicability and capability of NIRS as an important technology for digital health.
{"title":"Recent Advances and Design Strategies Towards Wearable Near-Infrared Spectroscopy","authors":"Shuoyan Liu;Bing Xue;Wenyuan Yan;Alina Y. Rwei;Changsheng Wu","doi":"10.1109/OJNANO.2022.3226603","DOIUrl":"https://doi.org/10.1109/OJNANO.2022.3226603","url":null,"abstract":"With a growing focus on properties of softness, miniaturization, and intelligence, extensive research has been focusing on constructing wearable electronic devices facilitating comfort, wearable health monitoring and diagnosis. Among recent progress in the development of wearable bioelectronics, wearable near-infrared spectroscopy (NIRS) devices demonstrate wide implementation possibilities in multiple health monitoring scenarios. Throughout the years, multiple design strategies have assisted in developing wearable NIRS devices with high wearing comfortability and miniaturized size. This review summarizes the principle of NIRS technology, recent advances in design strategies towards soft, wearable, miniaturized NIRS devices, and the future potential development directions. Based on the discussion of different design strategies, including modular device design, flexible hybrid electronics, and materials innovation, we also pinpoint some development directions for wearable NIRS. The reviewed and proposed research efforts may enhance the applicability and capability of NIRS as an important technology for digital health.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"25-35"},"PeriodicalIF":1.7,"publicationDate":"2022-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/09969912.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3491642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Quantum-dot Cellular Automata (QCA) provide very high scale integration potential, very high switching frequency, and have extremely low power demands, which make the QCA technology quite attractive for the design and implementation of large-scale, high-performance nanoelectronic circuits. However, state-of-the-art QCA circuit designs were not derived by following a set of universal design rules, as is the case of CMOS circuits, and, as a result, it is either impossible or very difficult to combine QCA circuit blocks in effective large-scale circuits. In this paper, we introduce a novel automated design methodology, which builds upon a QCA specific universal design rules set. The proposed methodology assumes the availability of a generic QCA crossbar architecture and provides the means to customize it in order to implement any given logic function. The programming principles and the flow of the proposed automated design tool for crossbar QCA circuits are described analytically and we apply the proposed automated design method for the design of both combinatorial and sequential circuits. The obtained designs demonstrate that the proposed method is functional, easy to use, and provides the desired QCA circuit design unification.
{"title":"Methodology for Automated Design of Quantum-Dot Cellular Automata Circuits","authors":"Orestis Liolis;Vassilios A. Mardiris;Ioannis G. Karafyllidis;Sorin Cotofana;Georgios Ch. Sirakoulis","doi":"10.1109/OJNANO.2022.3223413","DOIUrl":"10.1109/OJNANO.2022.3223413","url":null,"abstract":"Quantum-dot Cellular Automata (QCA) provide very high scale integration potential, very high switching frequency, and have extremely low power demands, which make the QCA technology quite attractive for the design and implementation of large-scale, high-performance nanoelectronic circuits. However, state-of-the-art QCA circuit designs were not derived by following a set of universal design rules, as is the case of CMOS circuits, and, as a result, it is either impossible or very difficult to combine QCA circuit blocks in effective large-scale circuits. In this paper, we introduce a novel automated design methodology, which builds upon a QCA specific universal design rules set. The proposed methodology assumes the availability of a generic QCA crossbar architecture and provides the means to customize it in order to implement any given logic function. The programming principles and the flow of the proposed automated design tool for crossbar QCA circuits are described analytically and we apply the proposed automated design method for the design of both combinatorial and sequential circuits. The obtained designs demonstrate that the proposed method is functional, easy to use, and provides the desired QCA circuit design unification.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"162-171"},"PeriodicalIF":1.7,"publicationDate":"2022-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9968311","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62888904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A touch screen that combines a display and a touch sensor array is a critical component enabling human-machine interaction. The progress made in flexible touch screen technologies also vigorously drives the development and application of flexible electronics in various fields. Over the past decade, there have been enormous research and development efforts on new structures and materials for touch sensors in flexible displays, especially for flexible organic light-emitting diode (OLED) displays. Herein, this review discusses the mechanics and structures of flexible touch screens, including their benefits and drawbacks. The recent advances in the structures and electrode materials (e.g., ITO, silver nanowires, metal mesh, graphene, carbon nanotubes, and conductive polymers) are reviewed, and the challenges and prospects of these technologies are also explored.
{"title":"Recent Advances in Touch Sensors for Flexible Displays","authors":"Chenglan Ouyang;Di Liu;Ke He;Jiahao Kang","doi":"10.1109/OJNANO.2022.3224757","DOIUrl":"https://doi.org/10.1109/OJNANO.2022.3224757","url":null,"abstract":"A touch screen that combines a display and a touch sensor array is a critical component enabling human-machine interaction. The progress made in flexible touch screen technologies also vigorously drives the development and application of flexible electronics in various fields. Over the past decade, there have been enormous research and development efforts on new structures and materials for touch sensors in flexible displays, especially for flexible organic light-emitting diode (OLED) displays. Herein, this review discusses the mechanics and structures of flexible touch screens, including their benefits and drawbacks. The recent advances in the structures and electrode materials (e.g., ITO, silver nanowires, metal mesh, graphene, carbon nanotubes, and conductive polymers) are reviewed, and the challenges and prospects of these technologies are also explored.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"36-46"},"PeriodicalIF":1.7,"publicationDate":"2022-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/09964079.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3484047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper presents a new design of charge plasma junctionless tunnel field effect transistor (CP JLTFET) with improved ON current, surface potentials. For the ease of fabrication, source and drain regions are induced in intrinsic silicon material using proper metal workfunctions. The rate of tunneling of electrons is found more in case of proposed CP JLTFET. The cavity length is varied between 8 nm and 10 nm and different dielectric constants have been used. This increased the ON state performance of device i.e ON drive current, potential and electric field. The increase in tunneling of electrons is mainly due to high recombination of carriers in the channel region. The proposed device simulated their electrical parameters like drain current, surface potentials, electric field, and energy bands with different dielectric constants. These excellent performance parameters of the proposed device with an appropriate material can be used for sensing application of biomolecules by introducing a cavity in the device.
{"title":"Design and Parametric Analysis of Charge Plasma Junctionless TFET for Biosensor Applications","authors":"D Manaswi;Srinivasa Rao Karumuri;Girish Wadhwa","doi":"10.1109/OJNANO.2022.3224462","DOIUrl":"https://doi.org/10.1109/OJNANO.2022.3224462","url":null,"abstract":"This paper presents a new design of charge plasma junctionless tunnel field effect transistor (CP JLTFET) with improved ON current, surface potentials. For the ease of fabrication, source and drain regions are induced in intrinsic silicon material using proper metal workfunctions. The rate of tunneling of electrons is found more in case of proposed CP JLTFET. The cavity length is varied between 8 nm and 10 nm and different dielectric constants have been used. This increased the ON state performance of device i.e ON drive current, potential and electric field. The increase in tunneling of electrons is mainly due to high recombination of carriers in the channel region. The proposed device simulated their electrical parameters like drain current, surface potentials, electric field, and energy bands with different dielectric constants. These excellent performance parameters of the proposed device with an appropriate material can be used for sensing application of biomolecules by introducing a cavity in the device.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"71-76"},"PeriodicalIF":1.7,"publicationDate":"2022-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/09963639.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3518038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Regardless of the technology, additive or subtractive, the miniaturization trend is constantly pushing for smaller resolutions. The rise of global challenges in material availability, fabrication in three dimensions (3D), design flexibility and rapid prototyping have pushed additive manufacturing (AM) into the spotlight. Addressing the miniaturization trend, AM has already successfully answered the challenges for microscale 3D fabrication. However, fabricating nano-resolution still presents a challenge. In this review, we will present some of the most reported AM-based technologies capable of nanoscale 3D fabrication addressing resolutions of ≤ 500 nm. The focus is placed on Electrohydrodynamic (EHD) printing (also known as e-jet printing), as EHD printing seems to have the best trade-off when it comes to technique complexity, achievable resolutions, material diversity and potential to scale-up throughput. An overview of the smallest achieved resolutions as well as the most unique use cases and demonstrated applications will be addressed in this work.
{"title":"Additive Manufacturing for Nano-Feature Applications: Electrohydrodynamic Printing as a Next-Generation Enabling Technology","authors":"Goran Miskovic;Robin Kaufhold","doi":"10.1109/OJNANO.2022.3224229","DOIUrl":"10.1109/OJNANO.2022.3224229","url":null,"abstract":"Regardless of the technology, additive or subtractive, the miniaturization trend is constantly pushing for smaller resolutions. The rise of global challenges in material availability, fabrication in three dimensions (3D), design flexibility and rapid prototyping have pushed additive manufacturing (AM) into the spotlight. Addressing the miniaturization trend, AM has already successfully answered the challenges for microscale 3D fabrication. However, fabricating nano-resolution still presents a challenge. In this review, we will present some of the most reported AM-based technologies capable of nanoscale 3D fabrication addressing resolutions of ≤ 500 nm. The focus is placed on Electrohydrodynamic (EHD) printing (also known as e-jet printing), as EHD printing seems to have the best trade-off when it comes to technique complexity, achievable resolutions, material diversity and potential to scale-up throughput. An overview of the smallest achieved resolutions as well as the most unique use cases and demonstrated applications will be addressed in this work.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"191-198"},"PeriodicalIF":1.7,"publicationDate":"2022-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9961888","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62889145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Power delivery networks are responsible for supplying clean power to the integrated circuits. Power supply noise plays a critical role in determining the performance of high-speed very large scale integration circuits and systems. In order to maintain power integrity in high-speed systems, decoupling capacitors are used to maintain low impedance of the PDN to eventually minimize power supply noise. However, the discrete optimization problem of selecting decoupling capacitors becomes computationally challenging in the systems having stringent power integrity (PI) requirements. In this work, a novel approach using the Social-Learning Particle Swarm Optimization (SLPSO) technique along with Adaptive Region Search (ARS) is used to tackle the Large-Scale Optimization Problem (LSOP) of decoupling capacitor placement. Region Search (RS) is used to guide particles, followed by ARS to dynamical search for the local best positions and for particles to move faster across the search space while maintaining the diversity of the population. To demonstrate the proposed approach, three practical case studies are presented. The obtained results are compared with current state-of-the-art approaches. The proposed approach drastically reduces computation time and is consistent with better results than other approaches. This consistency of improvement in CPU time in the results of all the examples validates the proposed approach.
{"title":"Large-Scale Optimization of Decoupling Capacitors Using Adaptive Region Based Encoding Scheme in Particle Swarm Optimization","authors":"DINESH JUNJARIYA;JAI NARAYAN TRIPATHI","doi":"10.1109/OJNANO.2022.3224061","DOIUrl":"10.1109/OJNANO.2022.3224061","url":null,"abstract":"Power delivery networks are responsible for supplying clean power to the integrated circuits. Power supply noise plays a critical role in determining the performance of high-speed very large scale integration circuits and systems. In order to maintain power integrity in high-speed systems, decoupling capacitors are used to maintain low impedance of the PDN to eventually minimize power supply noise. However, the discrete optimization problem of selecting decoupling capacitors becomes computationally challenging in the systems having stringent power integrity (PI) requirements. In this work, a novel approach using the Social-Learning Particle Swarm Optimization (SLPSO) technique along with Adaptive Region Search (ARS) is used to tackle the Large-Scale Optimization Problem (LSOP) of decoupling capacitor placement. Region Search (RS) is used to guide particles, followed by ARS to dynamical search for the local best positions and for particles to move faster across the search space while maintaining the diversity of the population. To demonstrate the proposed approach, three practical case studies are presented. The obtained results are compared with current state-of-the-art approaches. The proposed approach drastically reduces computation time and is consistent with better results than other approaches. This consistency of improvement in CPU time in the results of all the examples validates the proposed approach.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"210-219"},"PeriodicalIF":1.7,"publicationDate":"2022-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9961848","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62889099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Since the beginning of the 20th century, plasma technology has been used in a variety of fields. In the 1980s, R&D related to arc plasma welding and waste disposal, as well as etching, painting, and gas removal equipment that used plasma technology in the processes associated with semiconductor manufacturing. In the 1990s, research on removing air pollutants using atmospheric pressure plasma technology became active. In the 2000s, research on the application of thermal/non-thermal plasma technology to air pollution, waste and water treatment became active. Electrostatic precipitators (ESP) can remove a wide variety of particles such as soot from thermal power plants, coal, and oil mist, resin powder, glass powder, dust, and iron powder generated from incinerators, boilers, and various manufacturing plants. Waste treatment aims to reduce the volume of garbage, recycle incinerated materials, and utilize waste heat from incineration, and plasma technology is used in each process. Various techniques have been used for making purified water. Water quality requirements vary according to the objective. Plasma technology uses an electrical field to encourage seed germination and growth. Due to the spread of such applied technology, plasma technology has attracted attention again in recent years.
{"title":"Review of Plasma Technologies for Contribution of Environmental Purification","authors":"Kuniko Urashima","doi":"10.1109/OJNANO.2022.3223897","DOIUrl":"10.1109/OJNANO.2022.3223897","url":null,"abstract":"Since the beginning of the 20th century, plasma technology has been used in a variety of fields. In the 1980s, R&D related to arc plasma welding and waste disposal, as well as etching, painting, and gas removal equipment that used plasma technology in the processes associated with semiconductor manufacturing. In the 1990s, research on removing air pollutants using atmospheric pressure plasma technology became active. In the 2000s, research on the application of thermal/non-thermal plasma technology to air pollution, waste and water treatment became active. Electrostatic precipitators (ESP) can remove a wide variety of particles such as soot from thermal power plants, coal, and oil mist, resin powder, glass powder, dust, and iron powder generated from incinerators, boilers, and various manufacturing plants. Waste treatment aims to reduce the volume of garbage, recycle incinerated materials, and utilize waste heat from incineration, and plasma technology is used in each process. Various techniques have been used for making purified water. Water quality requirements vary according to the objective. Plasma technology uses an electrical field to encourage seed germination and growth. Due to the spread of such applied technology, plasma technology has attracted attention again in recent years.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"159-165"},"PeriodicalIF":1.7,"publicationDate":"2022-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9961850","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62889051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We report a novel flexible capacitive pressure-pulse sensor array developed by integrating droplet-dispensed graphene oxide (GO) sensing elements and flexible electronics. The utilization of droplet-dispensing technology enables the fabrication multiple capacitive sensing elements rapidly while producing sensitive pressure sensors with excellent repeatability. The dispensed droplet volume (GO aqueous dispersion) ranged from around 33.5 to 65.4 pL with diameter ranging from 40 to 50 μm. The size (i.e., footprint and dielectric material thickness) of a sensing element can be controlled by the total GO dispersed per droplet. The fabrication process and preliminary characterization of these GO capacitive sensors are discussed in this paper. Thus far, we have shown that these sensors have a sensitivity of ∼10−3 kPa−1, with the relative permittivity of the dispensed GO being ∼6 (measured at a frequency of 600 kHz). We have also demonstrated that the printed sensing elements can be used for human wrist pulse sensing. Hence the technology described in this paper could potentially be used in wearable electronics for healthcare applications.
{"title":"Droplet-Dispensed Graphene Oxide as Capacitive Sensing Elements for Flexible Pressure-Pulse Sensing Array","authors":"Ka Wai Kong;Keer Wang;Alice Yeuk Lan Leung;Hongyu Zhang;Jiao Suo;Meng Chen;Guanglie Zhang;Fei Fei;Jiangang Shen;Wen Jung Li","doi":"10.1109/OJNANO.2022.3223712","DOIUrl":"https://doi.org/10.1109/OJNANO.2022.3223712","url":null,"abstract":"We report a novel flexible capacitive pressure-pulse sensor array developed by integrating droplet-dispensed graphene oxide (GO) sensing elements and flexible electronics. The utilization of droplet-dispensing technology enables the fabrication multiple capacitive sensing elements rapidly while producing sensitive pressure sensors with excellent repeatability. The dispensed droplet volume (GO aqueous dispersion) ranged from around 33.5 to 65.4 pL with diameter ranging from 40 to 50 μm. The size (i.e., footprint and dielectric material thickness) of a sensing element can be controlled by the total GO dispersed per droplet. The fabrication process and preliminary characterization of these GO capacitive sensors are discussed in this paper. Thus far, we have shown that these sensors have a sensitivity of ∼10\u0000<sup>−3</sup>\u0000 kPa\u0000<sup>−1</sup>\u0000, with the relative permittivity of the dispensed GO being ∼6 (measured at a frequency of 600 kHz). We have also demonstrated that the printed sensing elements can be used for human wrist pulse sensing. Hence the technology described in this paper could potentially be used in wearable electronics for healthcare applications.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"47-54"},"PeriodicalIF":1.7,"publicationDate":"2022-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/09956867.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3491208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We provide a summary of the fundamentals of thermal management, outline the state-of-the-art in the field of thermal interface materials, and describe recent developments in graphene-based non-curing and curing composites used for thermal management. The discovery of unique heat conduction properties of graphene and few-layer graphene motivated research activities worldwide focused on creating efficient graphene-based thermal interface materials. While the initial focus of these studies was on obtaining the maximum possible thermal conductivity of the composites, recently the attention has shifted to practical problems of minimizing the thermal contact resistance at interfaces, optimizing the size distribution of graphene as filler, and addressing the issues of scalability, stability, and production costs at commercial scales. We conclude the review with a general outlook for commercial applications of graphene in the thermal management of electronics.
{"title":"Graphene Thermal Interface Materials – State-of-the-Art and Application Prospects","authors":"Sriharsha Sudhindra;Lokesh Ramesh;Alexander A. Balandin","doi":"10.1109/OJNANO.2022.3223016","DOIUrl":"10.1109/OJNANO.2022.3223016","url":null,"abstract":"We provide a summary of the fundamentals of thermal management, outline the state-of-the-art in the field of thermal interface materials, and describe recent developments in graphene-based non-curing and curing composites used for thermal management. The discovery of unique heat conduction properties of graphene and few-layer graphene motivated research activities worldwide focused on creating efficient graphene-based thermal interface materials. While the initial focus of these studies was on obtaining the maximum possible thermal conductivity of the composites, recently the attention has shifted to practical problems of minimizing the thermal contact resistance at interfaces, optimizing the size distribution of graphene as filler, and addressing the issues of scalability, stability, and production costs at commercial scales. We conclude the review with a general outlook for commercial applications of graphene in the thermal management of electronics.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"169-181"},"PeriodicalIF":1.7,"publicationDate":"2022-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9954624","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62889177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The present work explores the theoretical analysis of copper passivated MgONRs (Cu-MgO-Cu) for possible nanointerconnect applications. The first principles calculations based on density functional theory (DFT) and non-equilibrium Green's function are employed for theoretical investigation. Pristine MgONRs (H-MgO-H) and Cu-MgO-Cu are both thermodynamically stable and are metallic with H-MgO-H being relatively more stable. Further, the I-V characteristics evaluated using the two-probe method reveal the ohmic behavior of Cu-MgO-Cu. The Cu-MgO-Cu device is further investigated for the nanointerconnect applications. The computed nanoscale parasitic components such as quantum resistance ($R_{Q}$), quantum capacitance ($C_{Q}$), and kinetic inductance ($L_{K}$) are computed to be 6.46 k$Omega$, 5.57 fF/$mutext{m}$, and 58.17 nF/$mu$m, respectively. Furthermore, the delay and power delay product (PDP) of the nanointerconnect are explored which are important attributes of nanointerconnects. The findings suggest the Cu-MgO-Cu nanoribbons with low parasitic parameters can potentially be employed for nanointerconnect applications.
本工作探讨了铜钝化mgonr (Cu-MgO-Cu)的理论分析，以实现可能的纳米互连应用。基于密度泛函理论和非平衡格林函数的第一性原理计算进行了理论研究。原始mgonr (H-MgO-H)和Cu-MgO-Cu都是热力学稳定的金属，H-MgO-H相对更稳定。此外，使用双探针方法评估的I-V特性揭示了Cu-MgO-Cu的欧姆行为。进一步研究了Cu-MgO-Cu器件在纳米互连中的应用。计算得到的纳米级寄生分量如量子电阻($R_{Q}$)、量子电容($C_{Q}$)和动态电感($L_{K}$)分别为6.46 k $Omega$、5.57 fF/ $mutext{m}$和58.17 nF/ $mu$ m。此外，研究了纳米互连的延迟和功率延迟积(PDP)这两个重要属性。研究结果表明，具有低寄生参数的Cu-MgO-Cu纳米带可用于纳米互连应用。
{"title":"Copper Passivated Zigzag MgO Nanoribbons for Potential Nanointerconnect Applications","authors":"M. Sankush Krishna;Sangeeta Singh;Brajesh Kumar Kaushik","doi":"10.1109/OJNANO.2022.3223151","DOIUrl":"10.1109/OJNANO.2022.3223151","url":null,"abstract":"The present work explores the theoretical analysis of copper passivated MgONRs (Cu-MgO-Cu) for possible nanointerconnect applications. The first principles calculations based on density functional theory (DFT) and non-equilibrium Green's function are employed for theoretical investigation. Pristine MgONRs (H-MgO-H) and Cu-MgO-Cu are both thermodynamically stable and are metallic with H-MgO-H being relatively more stable. Further, the I-V characteristics evaluated using the two-probe method reveal the ohmic behavior of Cu-MgO-Cu. The Cu-MgO-Cu device is further investigated for the nanointerconnect applications. The computed nanoscale parasitic components such as quantum resistance (\u0000<inline-formula><tex-math>$R_{Q}$</tex-math></inline-formula>\u0000), quantum capacitance (\u0000<inline-formula><tex-math>$C_{Q}$</tex-math></inline-formula>\u0000), and kinetic inductance (\u0000<inline-formula><tex-math>$L_{K}$</tex-math></inline-formula>\u0000) are computed to be 6.46 k\u0000<inline-formula><tex-math>$Omega$</tex-math></inline-formula>\u0000, 5.57 fF/\u0000<inline-formula><tex-math>$mutext{m}$</tex-math></inline-formula>\u0000, and 58.17 nF/\u0000<inline-formula><tex-math>$mu$</tex-math></inline-formula>\u0000m, respectively. Furthermore, the delay and power delay product (PDP) of the nanointerconnect are explored which are important attributes of nanointerconnects. The findings suggest the Cu-MgO-Cu nanoribbons with low parasitic parameters can potentially be employed for nanointerconnect applications.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"220-226"},"PeriodicalIF":1.7,"publicationDate":"2022-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9954618","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62888758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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