Pub Date : 2025-08-12DOI: 10.1109/OJNANO.2025.3598219
Adelcio M. de Souza;Daniel R. Celino;Regiane Ragi;Murilo A. Romero
This paper describes device models for the current-voltage (I–V) and capacitance-voltage (C–V) characteristics of ballistic nanotransistors based on two-dimensional (2D) materials. The proposed methodology introduces a novel, fully analytical, and explicit approach grounded in fundamental physical principles. This approach enables seamless integration into circuit simulators and provides clear insight into device operation. In contrast to the drift-diffusion models commonly found in the literature, this approach accurately describes the ballistic transport regime observed in state-of-the-art 2D nanotransistors. The proposed model was validated against both experimental and ab initio numerical simulations from the literature for devices based on molybdenum disulfide (MoS2) and indium selenide (InSe). The results show excellent agreement with the reference datasets, confirming the model’s accuracy and its suitability for designing advanced nanoelectronic devices and circuits.
{"title":"Analytical Model for Ballistic 2D Nanotransistors","authors":"Adelcio M. de Souza;Daniel R. Celino;Regiane Ragi;Murilo A. Romero","doi":"10.1109/OJNANO.2025.3598219","DOIUrl":"https://doi.org/10.1109/OJNANO.2025.3598219","url":null,"abstract":"This paper describes device models for the current-voltage (I–V) and capacitance-voltage (C–V) characteristics of ballistic nanotransistors based on two-dimensional (2D) materials. The proposed methodology introduces a novel, fully analytical, and explicit approach grounded in fundamental physical principles. This approach enables seamless integration into circuit simulators and provides clear insight into device operation. In contrast to the drift-diffusion models commonly found in the literature, this approach accurately describes the ballistic transport regime observed in state-of-the-art 2D nanotransistors. The proposed model was validated against both experimental and <italic>ab initio</i> numerical simulations from the literature for devices based on molybdenum disulfide (MoS<sub>2</sub>) and indium selenide (InSe). The results show excellent agreement with the reference datasets, confirming the model’s accuracy and its suitability for designing advanced nanoelectronic devices and circuits.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"6 ","pages":"91-101"},"PeriodicalIF":1.9,"publicationDate":"2025-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11123147","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144926864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-20DOI: 10.1109/OJNANO.2025.3553692
Sebastiano De Stefano;Alfredo Spuri;Raffaele Barbella;Ofelia Durante;Adolfo Mazzotti;Andrea Sessa;Angelo Di Bernardo;Antonio Di Bartolomeo
The miniaturization of electronic components remains a critical focus in electronics, particularly in transistor design, with research exploring new solutions such as the use of two-dimensional materials in Schottky Barrier Field Effect Transistors (SB-FETs). Following the trend, this study presents two-dimensional MoS2 SB-FETs, configured with back-gate and van der Pauw contacts, and analyses their electrical behaviour through output and transfer characteristics. The consequences that local inhomogeneities due to fabrication processes have on Schottky barriers height and electrical behaviour of the device are underlined. A hierarchy of the Schottky barrier heights at the contacts is established, and a band model is developed to elucidate the underlying conduction mechanisms. This model combines thermionic emission and tunnelling to explain the operation of the studied MoS2 devices and can be broadly applied to other SB-FETs.
{"title":"Multilayer MoS2 Schottky Barrier Field Effect Transistor","authors":"Sebastiano De Stefano;Alfredo Spuri;Raffaele Barbella;Ofelia Durante;Adolfo Mazzotti;Andrea Sessa;Angelo Di Bernardo;Antonio Di Bartolomeo","doi":"10.1109/OJNANO.2025.3553692","DOIUrl":"https://doi.org/10.1109/OJNANO.2025.3553692","url":null,"abstract":"The miniaturization of electronic components remains a critical focus in electronics, particularly in transistor design, with research exploring new solutions such as the use of two-dimensional materials in Schottky Barrier Field Effect Transistors (SB-FETs). Following the trend, this study presents two-dimensional MoS<sub>2</sub> SB-FETs, configured with back-gate and van der Pauw contacts, and analyses their electrical behaviour through output and transfer characteristics. The consequences that local inhomogeneities due to fabrication processes have on Schottky barriers height and electrical behaviour of the device are underlined. A hierarchy of the Schottky barrier heights at the contacts is established, and a band model is developed to elucidate the underlying conduction mechanisms. This model combines thermionic emission and tunnelling to explain the operation of the studied MoS<sub>2</sub> devices and can be broadly applied to other SB-FETs.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"6 ","pages":"51-57"},"PeriodicalIF":1.8,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10935823","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143817787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Magnetic skyrmion has great potential as information carriers in next-generation logic, neuromorphic computing, and memory devices because of its topological stability, incredibly compact size, and low current consumption required to operate it. In this work, the computational demonstration of a skyrmion controlled by a voltage controlled magnetic anisotropy (VCMA) gradient on a trapezoidal nanotrack is studied for the application of racetrack memory. The trapezoidal nanotrack aids in guiding the skyrmion's motion under the anisotropy gradient by leveraging the edge repulsion force. By utilizing a defect, the proposed device ensures a continuous flow of binary bits ‘0’ and ‘1’ without any accumulation on the racetrack. The higher angle (θhigh) and higher anisotropy gradient (ΔKu-high) of the trapezoidal nanotrack accelerates the skyrmion owing to higher edge repulsion force and energy gradient force. The maximum speed of 1.27 m/s was achieved by the skyrmion, and the minimum time taken for the skyrmion to reach the detector from the nucleation point was 2.16 ns. The energy used to maintain the electric field is 4.58fJ per bit operation. This presents a novel approach to manipulate skyrmions under anisotropy gradient (ΔKu) on the trapezoidal nanotrack, paving the way for the development of improved skyrmion racetrack memory (sk-RM).
{"title":"VCMA Gradient-Driven Skyrmion on a Trapezoidal Nanotrack for Racetrack Memory Application","authors":"Bikash Sharma;Pema Rinzing Bhutia;Ravish Kumar Raj;Bibek Chettri;Brajesh Kumar Kaushik;Sonal Shreya","doi":"10.1109/OJNANO.2025.3550173","DOIUrl":"https://doi.org/10.1109/OJNANO.2025.3550173","url":null,"abstract":"Magnetic skyrmion has great potential as information carriers in next-generation logic, neuromorphic computing, and memory devices because of its topological stability, incredibly compact size, and low current consumption required to operate it. In this work, the computational demonstration of a skyrmion controlled by a voltage controlled magnetic anisotropy (VCMA) gradient on a trapezoidal nanotrack is studied for the application of racetrack memory. The trapezoidal nanotrack aids in guiding the skyrmion's motion under the anisotropy gradient by leveraging the edge repulsion force. By utilizing a defect, the proposed device ensures a continuous flow of binary bits ‘0’ and ‘1’ without any accumulation on the racetrack. The higher angle (<italic>θ<sub>high</sub></i>) and higher anisotropy gradient (<italic>ΔK<sub>u</sub><sub>-high</sub></i>) of the trapezoidal nanotrack accelerates the skyrmion owing to higher edge repulsion force and energy gradient force. The maximum speed of 1.27 m/s was achieved by the skyrmion, and the minimum time taken for the skyrmion to reach the detector from the nucleation point was 2.16 ns. The energy used to maintain the electric field is 4.58<italic>fJ</i> per bit operation. This presents a novel approach to manipulate skyrmions under anisotropy gradient (<italic>ΔK<sub>u</sub></i>) on the trapezoidal nanotrack, paving the way for the development of improved skyrmion racetrack memory (sk-RM).","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"6 ","pages":"44-50"},"PeriodicalIF":1.8,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10934757","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143761352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The treatment of diffuse, high-grade gliomas, the most aggressive form of primary brain tumors, poses significant therapeutic challenges. Recurrent high-grade gliomas are associated with a median overall survival of less than one year; therefore, new therapeutic strategies must be sought. In this work we propose the synthesis of novel superparamagnetic iron oxide (SPIO), following thermal decomposition in hexadecanediol, oleic acid and oleylamine, then assembled in micelles for brain tumor treatment. The resulting SPIO-micelles are preliminary characterized by an average diameter of 26 nm and a saturation magnetization of 56 emu/g, thus holding great potential for magnetic hyperthermia treatment (MHT). In this work a multiphysics nonlinear model for ad-hoc MHT planning based on patient-specific geometries has been developed. The model accounts for the convection-enhanced delivery (CED) computing the SPIO-micelles concentration patterns, coupling the mass transport to the RF problem, assuming a frequency- and spatial-dependent magnetic susceptibility. Given that the RF field is produced by a pair of Helmholtz coils, while considering the temperature-dependent variation of electromagnetic and thermal properties of normal and neoplastic brain tissue, the efficiency of the MHT was evaluated for different tumor geometries. The findings highlight that using realistic tumor geometries strongly affect treatment parameters (e.g., ∼32% and 1.2°C differences in the magnetic field and in the max. average tumor temperature). The radio-sensitization and equivalent dose distribution are studied, stressing the adjuvant potential of the novel SPIO-micelles formulation. The results also highlight that the proposed model could ensure precise hyperthermia treatment using RF MHT, confirming its potential for personalized cancer therapy. This research provides an important foundation for exploring the therapeutic possibilities of this novel approach, facilitating the development of tailored treatments for patients.
{"title":"Superparamagnetic Micelles for the Magnetic Hyperthermia Against Glioblastoma: A Multiphysics Approach for Personalized Treatment Planning","authors":"Matteo Bruno Lodi;Eleonora Matilde Angela Corda;Wirat Assawapanumat;Gian Luca Chabert;Francesco Desogus;Luca Saba;Andrea Perra;Norased Nasongkla;Alessandro Fanti;Giuseppe Mazzarella","doi":"10.1109/OJNANO.2025.3568291","DOIUrl":"https://doi.org/10.1109/OJNANO.2025.3568291","url":null,"abstract":"The treatment of diffuse, high-grade gliomas, the most aggressive form of primary brain tumors, poses significant therapeutic challenges. Recurrent high-grade gliomas are associated with a median overall survival of less than one year; therefore, new therapeutic strategies must be sought. In this work we propose the synthesis of novel superparamagnetic iron oxide (SPIO), following thermal decomposition in hexadecanediol, oleic acid and oleylamine, then assembled in micelles for brain tumor treatment. The resulting SPIO-micelles are preliminary characterized by an average diameter of 26 nm and a saturation magnetization of 56 emu/g, thus holding great potential for magnetic hyperthermia treatment (MHT). In this work a multiphysics nonlinear model for ad-hoc MHT planning based on patient-specific geometries has been developed. The model accounts for the convection-enhanced delivery (CED) computing the SPIO-micelles concentration patterns, coupling the mass transport to the RF problem, assuming a frequency- and spatial-dependent magnetic susceptibility. Given that the RF field is produced by a pair of Helmholtz coils, while considering the temperature-dependent variation of electromagnetic and thermal properties of normal and neoplastic brain tissue, the efficiency of the MHT was evaluated for different tumor geometries. The findings highlight that using realistic tumor geometries strongly affect treatment parameters (e.g., ∼32% and 1.2°C differences in the magnetic field and in the max. average tumor temperature). The radio-sensitization and equivalent dose distribution are studied, stressing the adjuvant potential of the novel SPIO-micelles formulation. The results also highlight that the proposed model could ensure precise hyperthermia treatment using RF MHT, confirming its potential for personalized cancer therapy. This research provides an important foundation for exploring the therapeutic possibilities of this novel approach, facilitating the development of tailored treatments for patients.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"6 ","pages":"66-79"},"PeriodicalIF":1.8,"publicationDate":"2025-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10993440","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144255701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-08DOI: 10.1109/OJNANO.2025.3568172
Srinivasa Rao Karumuri;G Sai Lakshmi;Girija Sravani Kondavitee
Diabetes is a metabolic disorder that inhibits the body’s capacity to produce an adequate amount of blood glucose. Indications of diabetes include heightened appetite, frequent urination, and increased thirst. The objective of this research was to employ an electro-osmotic pressure sensor to monitor changes in glucose concentration levels. The main aim was on developing micro bridges that could be integrated into the electro-osmotic pressure sensor. Utilizing a Finite Element Method (FEM) tool, the study examined the mechanical properties and response of three micro bridges, considering factors such as non-linearity and sensitivity conditions. Better suitable is integrated into osmotic pressure sensor by obtaining the response time is 18mins.
{"title":"Integration of Micro/Nano Pressure Sensor for Diabetes Patients Applications","authors":"Srinivasa Rao Karumuri;G Sai Lakshmi;Girija Sravani Kondavitee","doi":"10.1109/OJNANO.2025.3568172","DOIUrl":"https://doi.org/10.1109/OJNANO.2025.3568172","url":null,"abstract":"Diabetes is a metabolic disorder that inhibits the body’s capacity to produce an adequate amount of blood glucose. Indications of diabetes include heightened appetite, frequent urination, and increased thirst. The objective of this research was to employ an electro-osmotic pressure sensor to monitor changes in glucose concentration levels. The main aim was on developing micro bridges that could be integrated into the electro-osmotic pressure sensor. Utilizing a Finite Element Method (FEM) tool, the study examined the mechanical properties and response of three micro bridges, considering factors such as non-linearity and sensitivity conditions. Better suitable is integrated into osmotic pressure sensor by obtaining the response time is 18mins.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"6 ","pages":"80-90"},"PeriodicalIF":1.8,"publicationDate":"2025-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10993415","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144623934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Magnetic gears offer a reliable and vibration-free alternative to traditional mechanical gears. At the micro- and nanoscale, electrical manipulation of magnetic domains can further enhance the performance and versatility of these gears. In this work, we introduce the concept of electrically tunable magnetic nanogears and propose a nanomagnetic gear design that operates at the mesoscopic scale and exploits the electrical manipulation of magnetic textures and stray field coupling to achieve precise, contactless and tunable torque transmission. This device concept is scalable and offers a continuously adjustable electrical transmission ratio between two gears by exploiting the spin-orbit torque observed in nanomagnetic devices. We have analyzed the coupling of magnetic domains in two parallel circular nanotracks, each serving as a rotor in the gear system, using experimentally realistic material parameters. By exploiting the current-driven motion of the magnetic domains, we derive an ideal transmission ratio given by ω2/ω1 = 1 + ωd/ω1 where ω2 and ω1 are the mechanical angular velocities of the driven (output) and driving (input) rotors, respectively, and ωd(J) is the current-driven angular velocity of the magnetic domains valid when the two rotors are fully coupled via stray fields. Numerical calculations show that this nanogear can work up to current densities J of 4.1012 A/m2 and distances of 30 nm. This work paves the way for the development of a new generation of highly tunable nanomagnetic gears with potential applications in nano-actuators, micromachines and other nanoscale devices.
{"title":"Nanomagnetic Gears With Electrically Controlled Transmission Ratio","authors":"Maddalena Fiorentino;Davi Rodrigues;Riccardo Tomasello;Mario Carpentieri;Giovanni Finocchio;Francesca Garesci","doi":"10.1109/OJNANO.2025.3567022","DOIUrl":"https://doi.org/10.1109/OJNANO.2025.3567022","url":null,"abstract":"Magnetic gears offer a reliable and vibration-free alternative to traditional mechanical gears. At the micro- and nanoscale, electrical manipulation of magnetic domains can further enhance the performance and versatility of these gears. In this work, we introduce the concept of electrically tunable magnetic nanogears and propose a nanomagnetic gear design that operates at the mesoscopic scale and exploits the electrical manipulation of magnetic textures and stray field coupling to achieve precise, contactless and tunable torque transmission. This device concept is scalable and offers a continuously adjustable electrical transmission ratio between two gears by exploiting the spin-orbit torque observed in nanomagnetic devices. We have analyzed the coupling of magnetic domains in two parallel circular nanotracks, each serving as a rotor in the gear system, using experimentally realistic material parameters. By exploiting the current-driven motion of the magnetic domains, we derive an ideal transmission ratio given by <italic>ω<sub>2</sub></i>/<italic>ω<sub>1</sub></i> = 1 + <italic>ω<sub>d</sub></i>/<italic>ω<sub>1</sub></i> where <italic>ω<sub>2</sub></i> and <italic>ω<sub>1</sub></i> are the mechanical angular velocities of the driven (output) and driving (input) rotors, respectively, and <italic>ω<sub>d</sub></i>(<italic>J</i>) is the current-driven angular velocity of the magnetic domains valid when the two rotors are fully coupled via stray fields. Numerical calculations show that this nanogear can work up to current densities <italic>J</i> of 4.10<sup>12</sup> A/m<sup>2</sup> and distances of 30 nm. This work paves the way for the development of a new generation of highly tunable nanomagnetic gears with potential applications in nano-actuators, micromachines and other nanoscale devices.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"6 ","pages":"58-65"},"PeriodicalIF":1.8,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10985797","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144117289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study describes a VDBA (Voltage Differencing Buffered Amplifier)-based memristor emulator and its use in an instrumentation amplifier for biomedical applications. The proposed grounded and floating memristor has been implemented using a single VDBA and grounded MOS-Capacitor. The VDBA used in this article has also been designed and uses eighteen transistors only. The proposed memristor emulator can be operated in both decremental and incremental modes. The suggested emulator's robustness has been verified using a variety of evaluations, including non-ideal inspection, variations of process corner, temperature swings, and non-volatility performance. Using 45 nm CMOS process parameters in the Cadence environment, the layout has been accomplished, and simulations and observations of the theoretical fingerprint characteristics have been made. The incremental and decremental mode of operation for grounded/floating memristor can be easily obtained by modifying the circuit slightly. The shape of the pinched-hysteresis loop is maintained up to 5 MHz. The functionality of the proposed memristor has also been tested by integrating it with the Instrumentation amplifier to amplify weak bio-medical signals.
{"title":"Design of a VDBA-Based Memristor Emulator and Its Application for Bio-Sensing Through Instrument Amplifier","authors":"Pulak Mondal;Subhasish Banerjee;Mourina Ghosh;Ankur Singh;Santosh Kumar","doi":"10.1109/OJNANO.2025.3544166","DOIUrl":"https://doi.org/10.1109/OJNANO.2025.3544166","url":null,"abstract":"This study describes a VDBA (Voltage Differencing Buffered Amplifier)-based memristor emulator and its use in an instrumentation amplifier for biomedical applications. The proposed grounded and floating memristor has been implemented using a single VDBA and grounded MOS-Capacitor. The VDBA used in this article has also been designed and uses eighteen transistors only. The proposed memristor emulator can be operated in both decremental and incremental modes. The suggested emulator's robustness has been verified using a variety of evaluations, including non-ideal inspection, variations of process corner, temperature swings, and non-volatility performance. Using 45 nm CMOS process parameters in the Cadence environment, the layout has been accomplished, and simulations and observations of the theoretical fingerprint characteristics have been made. The incremental and decremental mode of operation for grounded/floating memristor can be easily obtained by modifying the circuit slightly. The shape of the pinched-hysteresis loop is maintained up to 5 MHz. The functionality of the proposed memristor has also been tested by integrating it with the Instrumentation amplifier to amplify weak bio-medical signals.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"6 ","pages":"35-43"},"PeriodicalIF":1.8,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10897813","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143563995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-24DOI: 10.1109/OJNANO.2025.3534518
{"title":"2024 Index IEEE Open Journal of Nanotechnology Vol. 5","authors":"","doi":"10.1109/OJNANO.2025.3534518","DOIUrl":"https://doi.org/10.1109/OJNANO.2025.3534518","url":null,"abstract":"","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"5 ","pages":"1-8"},"PeriodicalIF":1.8,"publicationDate":"2025-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10852553","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143105669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-17DOI: 10.1109/OJNANO.2025.3531759
Roopesh Singh;Shivam Verma
Energy-efficient non-volatile memory that supports non-destructive read capabilities is in high demand for random-access memory applications. This article presents the proposal and demonstration of a 1T-1R non-volatile memory cell, which has distinct read and write paths that utilize a memristive variant of the ferroelectric field effect transistor (MFeFET) for data storage. Through a combination of experimentally calibrated models and TCAD-based mixed-mode simulations, the proposed MFeFET-based memory cell is demonstrated to achieve a non-destructive read operation and higher read current at low operating voltages. Furthermore, the memory cell demonstrates a 50% reduction in read latency compared to spin transfer torque (STT) magneto-resistive random-access memory (MRAM) technologies, positioning it as a highly efficient solution for next-generation non-volatile memory applications.
{"title":"Memristive Ferroelectric FET for 1T-1R Nonvolatile Memory With Non-Destructive Readout","authors":"Roopesh Singh;Shivam Verma","doi":"10.1109/OJNANO.2025.3531759","DOIUrl":"https://doi.org/10.1109/OJNANO.2025.3531759","url":null,"abstract":"Energy-efficient non-volatile memory that supports non-destructive read capabilities is in high demand for random-access memory applications. This article presents the proposal and demonstration of a 1T-1R non-volatile memory cell, which has distinct read and write paths that utilize a memristive variant of the ferroelectric field effect transistor (MFeFET) for data storage. Through a combination of experimentally calibrated models and TCAD-based mixed-mode simulations, the proposed MFeFET-based memory cell is demonstrated to achieve a non-destructive read operation and higher read current at low operating voltages. Furthermore, the memory cell demonstrates a 50% reduction in read latency compared to spin transfer torque (STT) magneto-resistive random-access memory (MRAM) technologies, positioning it as a highly efficient solution for next-generation non-volatile memory applications.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"6 ","pages":"27-34"},"PeriodicalIF":1.8,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10845186","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-06DOI: 10.1109/OJNANO.2025.3525915
{"title":"IEEE Open Journal of Nanotechnology Information for Authors","authors":"","doi":"10.1109/OJNANO.2025.3525915","DOIUrl":"https://doi.org/10.1109/OJNANO.2025.3525915","url":null,"abstract":"","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"6 ","pages":"C3-C3"},"PeriodicalIF":1.8,"publicationDate":"2025-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10829840","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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