Pub Date : 2023-10-27DOI: 10.1109/OJNANO.2023.3327997
Tamiko Ohshima
Compared to solid target, powder target is low cost and can be varied in wide range of elemental combinations. Transparent and conductive aluminum-doped zinc oxide (AZO) thin films were prepared by sputter deposition using a mixed powder target consisting of zinc oxide and aluminum oxide powders at 98:2 wt%. The bulk density of the powder target can be varied depending on the pressing pressure. Therefore, AZO thin films were prepared on Si and sapphire substrates using powder targets with different bulk densities ( ρpowder ) ranging from 0.898 to 3.00 g/cm 3 . The fabricated structural, electrical, and optical properties of the AZO thin films were examined, and the relationships between the target bulk density and film properties were investigated. X-ray diffraction measurements revealed c-axis ZnO (002) diffraction peaks, corresponding to crystallite growth oriented perpendicular to the substrate. Hall effect measurements showed n-type conductivity, with carrier density and Hall mobility increasing as the bulk density of the powder target increased. At ρpowder = 3.00 g/cm 3 , the AZO thin film on the Si substrate showed the lowest resistivity of 1.35 × 10 −3 Ω·cm. UV-visible spectroscopy measurements showed that the average transmittance in the visible light region exceeded 80% for the AZO thin films on the sapphire substrates. The figure of merit was calculated as a measure of the potential application in optoelectronic devices, resulting in 6.37 × 10 −3 Ω −1 for ρpowder = 3.00 g/cm 3 . This research contributes to Nagasaki University's goal of “planetary health”.
{"title":"Sputtering Deposition With Low Cost Multi-Element Powder Targets","authors":"Tamiko Ohshima","doi":"10.1109/OJNANO.2023.3327997","DOIUrl":"10.1109/OJNANO.2023.3327997","url":null,"abstract":"Compared to solid target, powder target is low cost and can be varied in wide range of elemental combinations. Transparent and conductive aluminum-doped zinc oxide (AZO) thin films were prepared by sputter deposition using a mixed powder target consisting of zinc oxide and aluminum oxide powders at 98:2 wt%. The bulk density of the powder target can be varied depending on the pressing pressure. Therefore, AZO thin films were prepared on Si and sapphire substrates using powder targets with different bulk densities (\u0000<italic>ρ<sub>p</sub><sub>owder</sub></i>\u0000) ranging from 0.898 to 3.00 g/cm\u0000<sup>3</sup>\u0000. The fabricated structural, electrical, and optical properties of the AZO thin films were examined, and the relationships between the target bulk density and film properties were investigated. X-ray diffraction measurements revealed c-axis ZnO (002) diffraction peaks, corresponding to crystallite growth oriented perpendicular to the substrate. Hall effect measurements showed n-type conductivity, with carrier density and Hall mobility increasing as the bulk density of the powder target increased. At \u0000<italic>ρ<sub>p</sub><sub>owder</sub></i>\u0000 = 3.00 g/cm\u0000<sup>3</sup>\u0000, the AZO thin film on the Si substrate showed the lowest resistivity of 1.35 × 10\u0000<sup>−3</sup>\u0000 Ω·cm. UV-visible spectroscopy measurements showed that the average transmittance in the visible light region exceeded 80% for the AZO thin films on the sapphire substrates. The figure of merit was calculated as a measure of the potential application in optoelectronic devices, resulting in 6.37 × 10\u0000<sup>−3</sup>\u0000 Ω\u0000<sup>−1</sup>\u0000 for \u0000<italic>ρ<sub>p</sub><sub>owder</sub></i>\u0000 = 3.00 g/cm\u0000<sup>3</sup>\u0000. This research contributes to Nagasaki University's goal of “planetary health”.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2023-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10298617","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135212984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This article describes the fabrication and experimental results of a novel step structure Radio Frequency Microelectromechanical system (RF MEMS) switch integrated with a circular patch antenna. The RF MEMS switch is developed using surface micromachining technology and exhibits several desirable characteristics. The key findings and features of the proposed RF MEMS switch are as follows: The switch operates at a very low pull-in voltage of 4.4 V, which is advantageous as it requires low actuation voltage for switching operations. Low ON State Capacitance: The switch demonstrates a low ON state capacitance of 81.2 fF, indicating efficient switching performance. High Isolation: The switch exhibits high isolation of −60.68 dB at 23 GHz, which is the central frequency of the K-band. This high isolation ensures minimal interference and improved signal integrity. The RF MEMS switch is integrated with a circular patch antenna, enabling reconfigurability in the operating frequency of the antenna. The antenna's frequency can be adjusted by actuating the switches alternatively. The specific operating frequencies and return loss values are as follows: Both Switches ON: The antenna radiates the signal at a frequency of 19.2 GHz with a return loss of −26.7 dB. Only Switch A ON: The antenna radiates at a frequency of 21 GHz with a return loss of −17.6 dB. Only Switch B ON: The antenna radiates the signal at a frequency of 26.4 GHz with a return loss of −17.47 dB. The RF MEMS switch and antenna are optimized to transmit RF signals within the K-band frequency range. The integration of the step structured RF MEMS switches successfully enables reconfiguration of the antenna's operating frequency. The proposed antenna, integrated with the RF MEMS switches, has potential applications in various K-band systems, including surface movement radars, direct broadcast satellite, Direct-to-Home (DHT) television, and 5th Generation (5G) mobile communication. The reconfigurability of the antenna's frequency allows for flexibility and adaptability in different K-band applications.
{"title":"Design, Fabrication and Measurement of Radio Frequency Micro-Electro-Mechanical Systems","authors":"Girija Sravani Kondavitee;Young Suh Song;Srinivasa Rao Karumuri;Koushik Guha;Brajesh Kumar Kaushik;Aimé Lay-Ekuakille","doi":"10.1109/OJNANO.2023.3318236","DOIUrl":"10.1109/OJNANO.2023.3318236","url":null,"abstract":"This article describes the fabrication and experimental results of a novel step structure Radio Frequency Microelectromechanical system (RF MEMS) switch integrated with a circular patch antenna. The RF MEMS switch is developed using surface micromachining technology and exhibits several desirable characteristics. The key findings and features of the proposed RF MEMS switch are as follows: The switch operates at a very low pull-in voltage of 4.4 V, which is advantageous as it requires low actuation voltage for switching operations. Low ON State Capacitance: The switch demonstrates a low ON state capacitance of 81.2 fF, indicating efficient switching performance. High Isolation: The switch exhibits high isolation of −60.68 dB at 23 GHz, which is the central frequency of the K-band. This high isolation ensures minimal interference and improved signal integrity. The RF MEMS switch is integrated with a circular patch antenna, enabling reconfigurability in the operating frequency of the antenna. The antenna's frequency can be adjusted by actuating the switches alternatively. The specific operating frequencies and return loss values are as follows: Both Switches ON: The antenna radiates the signal at a frequency of 19.2 GHz with a return loss of −26.7 dB. Only Switch A ON: The antenna radiates at a frequency of 21 GHz with a return loss of −17.6 dB. Only Switch B ON: The antenna radiates the signal at a frequency of 26.4 GHz with a return loss of −17.47 dB. The RF MEMS switch and antenna are optimized to transmit RF signals within the K-band frequency range. The integration of the step structured RF MEMS switches successfully enables reconfiguration of the antenna's operating frequency. The proposed antenna, integrated with the RF MEMS switches, has potential applications in various K-band systems, including surface movement radars, direct broadcast satellite, Direct-to-Home (DHT) television, and 5th Generation (5G) mobile communication. The reconfigurability of the antenna's frequency allows for flexibility and adaptability in different K-band applications.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2023-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10269333","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135913448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-27DOI: 10.1109/OJNANO.2023.3316877
Norman J. M. Horing;M. L. Glasser
In this work we analyze the statistical thermodynamic functions and magnetic moment of a Dice lattice subject to a normal quantizing magnetic field. Our analysis addresses the Grand Potential and Helmholtz Free Energy, as well as the magnetic moment, entropy and specific heat at constant volume, explicitly determining their magnetic field dependencies in the degenerate statistical regime, replete with de Haas-van Alphen oscillatory phenomenology (and other magnetic field dependence); and also determining their temperature dependencies jointly with magnetic field features in the approach to the zero temperature limit. Furthermore, we evaluate the Grand Potential exactly, for arbitrary temperature and density. Our results are obtained with consideration of the presence of heat and particle baths with fixed chemical potential and they are discussed in relation to other pertinent work on the subject.
{"title":"Magnetic Landau Quantization Effects on the Magnetic Moment and Specific Heat of a T-3 Dice Lattice","authors":"Norman J. M. Horing;M. L. Glasser","doi":"10.1109/OJNANO.2023.3316877","DOIUrl":"https://doi.org/10.1109/OJNANO.2023.3316877","url":null,"abstract":"In this work we analyze the statistical thermodynamic functions and magnetic moment of a Dice lattice subject to a normal quantizing magnetic field. Our analysis addresses the Grand Potential and Helmholtz Free Energy, as well as the magnetic moment, entropy and specific heat at constant volume, explicitly determining their magnetic field dependencies in the degenerate statistical regime, replete with de Haas-van Alphen oscillatory phenomenology (and other magnetic field dependence); and also determining their temperature dependencies jointly with magnetic field features in the approach to the zero temperature limit. Furthermore, we evaluate the Grand Potential exactly, for arbitrary temperature and density. Our results are obtained with consideration of the presence of heat and particle baths with fixed chemical potential and they are discussed in relation to other pertinent work on the subject.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2023-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10265748","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"109156927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study investigated the electrical properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) with varied recess depths under the gate electrode. We demonstrated a recess depth of approximately 6 nm, which was achieved through neutral beam etching (NBE) technique with a low etch rate of 1.8 nm/min, resulting in device enhancement-mode (E-mode) behavior with threshold voltage (V th ) of 0.49 V. The effects of post-metallization annealing (PMA) on the device performance were also examined. The results revealed that PMA treatment improves the DC characteristics of the devices, including maximum drain current (I DMAX ), transconductance (g m ), subthreshold swing (SS), on-off ratio, and off-state leakage current, with maximum enhancement percentage of 18.3% for I DMAX , 3758% for on-off ratio, and 54.3% for SS. Moreover, this study compared the recess depths of metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with the SiN dielectric layer. The results showed that MIS-HEMTs exhibit more negative V th values, which can be attributed to the controlled surface states achieved through passivation.
{"title":"Enhancing the Performance of E-Mode AlGaN/GaN HEMTs With Recessed Gates Through Low-Damage Neutral Beam Etching and Post-Metallization Annealing","authors":"Yi-Ho Chen;Daisuke Ohori;Muhammad Aslam;Yao-Jen Lee;Yiming Li;Seiji Samukawa","doi":"10.1109/OJNANO.2023.3306011","DOIUrl":"10.1109/OJNANO.2023.3306011","url":null,"abstract":"This study investigated the electrical properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) with varied recess depths under the gate electrode. We demonstrated a recess depth of approximately 6 nm, which was achieved through neutral beam etching (NBE) technique with a low etch rate of 1.8 nm/min, resulting in device enhancement-mode (E-mode) behavior with threshold voltage (V\u0000<sub>th</sub>\u0000) of 0.49 V. The effects of post-metallization annealing (PMA) on the device performance were also examined. The results revealed that PMA treatment improves the DC characteristics of the devices, including maximum drain current (I\u0000<sub>DMAX</sub>\u0000), transconductance (g\u0000<sub>m</sub>\u0000), subthreshold swing (SS), on-off ratio, and off-state leakage current, with maximum enhancement percentage of 18.3% for I\u0000<sub>DMAX</sub>\u0000, 3758% for on-off ratio, and 54.3% for SS. Moreover, this study compared the recess depths of metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with the SiN dielectric layer. The results showed that MIS-HEMTs exhibit more negative V\u0000<sub>th</sub>\u0000 values, which can be attributed to the controlled surface states achieved through passivation.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2023-08-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10223256","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62889594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The ever increasing field of application of nanodielectrics in electrical insulations calls for description of the mechanisms underlying the performance of these systems and for identification of the signs exposing their aging under high electric fields. Such approach is of particular interest to electrically insulating polymers because their chemical defects are of deleterious nature for their electrical properties and can largely degrade their performance at high electric fields. Although these defects usually leave spectroscopic signatures in terms of characteristic luminescence peaks, it is nontrivial to assign, in an unambiguous way, the identified peaks to specific chemical groups or defects because of the low intensity of the signal with the main reason being that the insulating polymers are weakly emitting materials under electric field. In this work, we go beyond the conventional electroluminescence technique to record spectroscopic features of insulating polymers. By introducing a single plane of silver nanoparticles (AgNPs) at the near-surface of thin polypropylene films, the electroluminescent signal is strongly enhanced by surface plasmons processes. The presence of AgNPs leads not only to a much higher electroluminescence intensity but also to a strong decrease of the electric field threshold for detection of light emission and to a phase-stabilization of the recorded spectra, thus improving the assignment of the characteristic luminescence peaks. Besides, the performed analyses bring evidence on the capability of AgNPs to trap and eject charges, and on the possibility to adjust the energetics of charge carriers in electrically insulating polymers at the electrode/dielectric contact via AgNPs.
{"title":"Tailoring by AgNPs of the Energetics of Charge Carriers in Electrically Insulating Polymers at the Electrode/Dielectric Contact","authors":"Kremena Makasheva;Christina Villeneuve-Faure;Adriana Scarangella;Luca Montanari;Laurent Boudou;Gilbert Teyssedre","doi":"10.1109/OJNANO.2023.3284201","DOIUrl":"https://doi.org/10.1109/OJNANO.2023.3284201","url":null,"abstract":"The ever increasing field of application of nanodielectrics in electrical insulations calls for description of the mechanisms underlying the performance of these systems and for identification of the signs exposing their aging under high electric fields. Such approach is of particular interest to electrically insulating polymers because their chemical defects are of deleterious nature for their electrical properties and can largely degrade their performance at high electric fields. Although these defects usually leave spectroscopic signatures in terms of characteristic luminescence peaks, it is nontrivial to assign, in an unambiguous way, the identified peaks to specific chemical groups or defects because of the low intensity of the signal with the main reason being that the insulating polymers are weakly emitting materials under electric field. In this work, we go beyond the conventional electroluminescence technique to record spectroscopic features of insulating polymers. By introducing a single plane of silver nanoparticles (AgNPs) at the near-surface of thin polypropylene films, the electroluminescent signal is strongly enhanced by surface plasmons processes. The presence of AgNPs leads not only to a much higher electroluminescence intensity but also to a strong decrease of the electric field threshold for detection of light emission and to a phase-stabilization of the recorded spectra, thus improving the assignment of the characteristic luminescence peaks. Besides, the performed analyses bring evidence on the capability of AgNPs to trap and eject charges, and on the possibility to adjust the energetics of charge carriers in electrically insulating polymers at the electrode/dielectric contact via AgNPs.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2023-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/10146436.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3516656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Convolutional neural networks (CNNs) offer potentially a better accuracy alternative for conventional deep learning tasks. The hardware implementation of CNN functionalities with conventional CMOS based devices still lags in area and energy efficiency. This has necessitated the investigations of unconventional devices, circuits, and architectures to efficiently mimic the functionality of neurons and synapses for neuromorphic applications. Spin-orbit torque magnetic tunnel junction (SOT-MTJ) device is capable of achieving energy and area efficient rectified linear unit (ReLU) activation functionality. This work utilizes the SOT-MTJ based ReLU for activation and max-pooling in a single unit to eliminate the need of dedicated hardware for pooling layer. Moreover, 2 × 2 multiply-accumulate-activate-pool (MAAP) is implemented by using four activation pairs each of which is fed by the crossbar output. The presented approach has been used to implement various CNN architectures and evaluated for CIFAR-10 image classification. The number of read/write operations reduce significantly by 2X in MAAP based CNN architectures. The results show that the area and energy in MAAP based CNN is improved by at least 25% and 82.9%, respectively, when compared with conventional CNN designs.
{"title":"Energy Efficient Spin-Based Implementation of Neuromorphic Functions in CNNs","authors":"Sandeep Soni;Gaurav Verma;Hemkant Nehete;Brajesh Kumar Kaushik","doi":"10.1109/OJNANO.2023.3261959","DOIUrl":"https://doi.org/10.1109/OJNANO.2023.3261959","url":null,"abstract":"Convolutional neural networks (CNNs) offer potentially a better accuracy alternative for conventional deep learning tasks. The hardware implementation of CNN functionalities with conventional CMOS based devices still lags in area and energy efficiency. This has necessitated the investigations of unconventional devices, circuits, and architectures to efficiently mimic the functionality of neurons and synapses for neuromorphic applications. Spin-orbit torque magnetic tunnel junction (SOT-MTJ) device is capable of achieving energy and area efficient rectified linear unit (ReLU) activation functionality. This work utilizes the SOT-MTJ based ReLU for activation and max-pooling in a single unit to eliminate the need of dedicated hardware for pooling layer. Moreover, 2 × 2 multiply-accumulate-activate-pool (MAAP) is implemented by using four activation pairs each of which is fed by the crossbar output. The presented approach has been used to implement various CNN architectures and evaluated for CIFAR-10 image classification. The number of read/write operations reduce significantly by 2X in MAAP based CNN architectures. The results show that the area and energy in MAAP based CNN is improved by at least 25% and 82.9%, respectively, when compared with conventional CNN designs.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2023-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/10081384.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3516685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-03-13DOI: 10.1109/OJNANO.2023.3256410
Shobhit Kareer;Jeongwon Park
The performance of silicon-based transistors is reaching its limit, and new materials like carbon nanotubes (CNTs) have started emerging to replace them in electronic products. However, the precise manipulation of CNTs requires complicated techniques, which increases process variation. These variations can lead to a decrease in the overall yield of the field-effect transistor (FET). This study shows how a low-frequency signal may regulate the number of CNTs on electrodes with a nanometer scale. We also demonstrate using an interdigitated electrode to reduce the shorts caused by metallic CNTs. The fabricated CNFETs were characterized using SEM, AFM, and I-V measurements. The study also demonstrates how the duration and amplitude of the applied signal impact the density of CNTs on the electrodes. Finally, finite element analysis was used to evaluate the electric field parameters during DEP. This technique will lead to precise CNTs per unit area, which can help fabricate transistors, sensors, and other electronic components.
{"title":"Metallic CNT Tolerant Field Effect Transistor Using Dielectrophoresis","authors":"Shobhit Kareer;Jeongwon Park","doi":"10.1109/OJNANO.2023.3256410","DOIUrl":"https://doi.org/10.1109/OJNANO.2023.3256410","url":null,"abstract":"The performance of silicon-based transistors is reaching its limit, and new materials like carbon nanotubes (CNTs) have started emerging to replace them in electronic products. However, the precise manipulation of CNTs requires complicated techniques, which increases process variation. These variations can lead to a decrease in the overall yield of the field-effect transistor (FET). This study shows how a low-frequency signal may regulate the number of CNTs on electrodes with a nanometer scale. We also demonstrate using an interdigitated electrode to reduce the shorts caused by metallic CNTs. The fabricated CNFETs were characterized using SEM, AFM, and I-V measurements. The study also demonstrates how the duration and amplitude of the applied signal impact the density of CNTs on the electrodes. Finally, finite element analysis was used to evaluate the electric field parameters during DEP. This technique will lead to precise CNTs per unit area, which can help fabricate transistors, sensors, and other electronic components.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2023-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/10068299.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3515774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-03-08DOI: 10.1109/OJNANO.2023.3273921
Bohua Zhang;Xiaoning Jiang
Nanoparticles containing thrombolytic medicines have been developed for thrombolysis applications in response to the increasing demand for effective, targeted treatment of thrombosis disease. In recent years, there has been a great deal of interest in nanoparticles that can be navigated and driven by a magnetic field. However, there are few review publications concerning the application of magnetic nanoparticles in thrombolysis. In this study, we examine the current state of magnetic nanoparticles in the application of in vitro and in vivo thrombolysis under a static or dynamic magnetic field, as well as the combination of magnetic nanoparticles with an acoustic field for dual-mode thrombolysis. We also discuss four primary processes of magnetic nanoparticles mediated thrombolysis, including magnetic nanoparticle targeting, magnetic nanoparticle trapping, magnetic drug release, and magnetic rupture of blood clot fibrin networks. This review will offer unique insights for the future study and clinical development of magnetic nanoparticles mediated thrombolysis approaches.
{"title":"Magnetic Nanoparticles Mediated Thrombolysis–A Review","authors":"Bohua Zhang;Xiaoning Jiang","doi":"10.1109/OJNANO.2023.3273921","DOIUrl":"https://doi.org/10.1109/OJNANO.2023.3273921","url":null,"abstract":"Nanoparticles containing thrombolytic medicines have been developed for thrombolysis applications in response to the increasing demand for effective, targeted treatment of thrombosis disease. In recent years, there has been a great deal of interest in nanoparticles that can be navigated and driven by a magnetic field. However, there are few review publications concerning the application of magnetic nanoparticles in thrombolysis. In this study, we examine the current state of magnetic nanoparticles in the application of \u0000<italic>in vitro</i>\u0000 and \u0000<italic>in vivo</i>\u0000 thrombolysis under a static or dynamic magnetic field, as well as the combination of magnetic nanoparticles with an acoustic field for dual-mode thrombolysis. We also discuss four primary processes of magnetic nanoparticles mediated thrombolysis, including magnetic nanoparticle targeting, magnetic nanoparticle trapping, magnetic drug release, and magnetic rupture of blood clot fibrin networks. This review will offer unique insights for the future study and clinical development of magnetic nanoparticles mediated thrombolysis approaches.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2023-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/10120760.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3516978","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-02-03DOI: 10.1109/OJNANO.2023.3238959
Yu Xinge
The papers in this special section focus on materials and devices for flexible sensors. Presents recent advances in skin electronics, touch sensors for flexible display, near-infrared spectroscopy (NIRS) and organic electrochemical transistors (OECT), respectively. Three research article introduces new methods in flexible pressure sensing array, ammonia sensors and charge plasma junctionless tunnel field effect transistor (CP JLTFET), respectively.
{"title":"Guest Editorial: Materials & Devices for Advanced Flexible Sensors","authors":"Yu Xinge","doi":"10.1109/OJNANO.2023.3238959","DOIUrl":"https://doi.org/10.1109/OJNANO.2023.3238959","url":null,"abstract":"The papers in this special section focus on materials and devices for flexible sensors. Presents recent advances in skin electronics, touch sensors for flexible display, near-infrared spectroscopy (NIRS) and organic electrochemical transistors (OECT), respectively. Three research article introduces new methods in flexible pressure sensing array, ammonia sensors and charge plasma junctionless tunnel field effect transistor (CP JLTFET), respectively.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2023-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/10036332.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3508121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-10DOI: 10.1109/OJNANO.2023.3234042
NORMAN J. M. HORING
We examine the question “Can Dirac materials exist in a nondegenerate statistical state?,” deriving and employing an identity for the thermodynamic Grand Potential $Omega$ (per unit volume/area) in the low density nondegenerate statistical regime, relating it to the density $n$ as $Omega = -beta ^{-1} n$ ( $beta ^{-1} = kappa _{B} T$ is thermal energy, $kappa _{B}$ is the Boltzmann constant, and $T$ is Kelvin temperature). The implications of this identity for Dirac materials are explored. The identity is universally valid for all thermodynamic systems in equilibrium in the nondegenerate, low density statistical regime, irrespective of size, dimensionality or applied static fields. Phenomena that may contribute to the realization of such a nondegenerate statistical equilibrium state in Dirac materials are discussed.
{"title":"Dirac Materials and an Identity for the Grand Potential of the Nondegenerate Statistical Thermodynamic Regime","authors":"NORMAN J. M. HORING","doi":"10.1109/OJNANO.2023.3234042","DOIUrl":"https://doi.org/10.1109/OJNANO.2023.3234042","url":null,"abstract":"We examine the question “Can Dirac materials exist in a nondegenerate statistical state?,” deriving and employing an identity for the thermodynamic Grand Potential \u0000<inline-formula><tex-math>$Omega$</tex-math></inline-formula>\u0000 (per unit volume/area) in the low density nondegenerate statistical regime, relating it to the density \u0000<inline-formula><tex-math>$n$</tex-math></inline-formula>\u0000 as \u0000<inline-formula><tex-math>$Omega = -beta ^{-1} n$</tex-math> </inline-formula>\u0000 (\u0000<inline-formula><tex-math>$beta ^{-1} = kappa _{B} T$</tex-math></inline-formula>\u0000 is thermal energy, \u0000<inline-formula><tex-math>$kappa _{B}$</tex-math></inline-formula>\u0000 is the Boltzmann constant, and \u0000<inline-formula><tex-math>$T$</tex-math></inline-formula>\u0000 is Kelvin temperature). The implications of this identity for Dirac materials are explored. The identity is universally valid for all thermodynamic systems in equilibrium in the nondegenerate, low density statistical regime, irrespective of size, dimensionality or applied static fields. Phenomena that may contribute to the realization of such a nondegenerate statistical equilibrium state in Dirac materials are discussed.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2023-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/10014530.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3496406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：