Pub Date : 2020-09-01DOI: 10.1109/OJNANO.2020.3020567
Zarin Tasnim Sandhie;Farid Uddin Ahmed;Masud H. Chowdhury
Multiple valued logic (MVL) can represent an exponentially higher number of data/information compared to the binary logic for the same number of logic bits. Compared to the conventional and other emerging device technologies, Graphene Nano Ribbon Field Effect Transistor (GNRFET) appears to be very promising for designing MVL logic gates and arithmetic circuits due to some exceptional electrical properties of the GNRFET, e.g., the ability to control the threshold voltage by changing the width of the GNR. Variation of the threshold voltage is one of the prescribed techniques to achieve multiple voltage levels to implement the MVL circuit. This paper introduces a design approach for ternary logic gates and circuits using MOS-type GNRFET. The designs of basic ternary logic gates like inverters, NAND, NOR, and ternary arithmetic circuits like the ternary decoder, 3:1 multiplexer, and ternary half-adder are demonstrated using GNRFET. A comparative analysis of the GNRFET based ternary logic gates and circuits and those based on the conventional CMOS and CNTFET technologies is performed using delay, total power, and power-delay-product (PDP) as the metrics. The simulation and analysis are performed using the H-SPICE tool with a GNRFET model available on the Nanohub website.
{"title":"Design of Ternary Logic and Arithmetic Circuits Using GNRFET","authors":"Zarin Tasnim Sandhie;Farid Uddin Ahmed;Masud H. Chowdhury","doi":"10.1109/OJNANO.2020.3020567","DOIUrl":"https://doi.org/10.1109/OJNANO.2020.3020567","url":null,"abstract":"Multiple valued logic (MVL) can represent an exponentially higher number of data/information compared to the binary logic for the same number of logic bits. Compared to the conventional and other emerging device technologies, Graphene Nano Ribbon Field Effect Transistor (GNRFET) appears to be very promising for designing MVL logic gates and arithmetic circuits due to some exceptional electrical properties of the GNRFET, e.g., the ability to control the threshold voltage by changing the width of the GNR. Variation of the threshold voltage is one of the prescribed techniques to achieve multiple voltage levels to implement the MVL circuit. This paper introduces a design approach for ternary logic gates and circuits using MOS-type GNRFET. The designs of basic ternary logic gates like inverters, NAND, NOR, and ternary arithmetic circuits like the ternary decoder, 3:1 multiplexer, and ternary half-adder are demonstrated using GNRFET. A comparative analysis of the GNRFET based ternary logic gates and circuits and those based on the conventional CMOS and CNTFET technologies is performed using delay, total power, and power-delay-product (PDP) as the metrics. The simulation and analysis are performed using the H-SPICE tool with a GNRFET model available on the Nanohub website.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/OJNANO.2020.3020567","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3491255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Motion monitoring by flexible strain or pressure sensors have been under spotlight in the field of wearable electronics. Based on triboelectric effect, generated energy from body contact and compression during daily movement can be used for both reflecting motion status and energy recollection. Here, we report a stretchable pressure sensor based on triboelectric effect and dots-distributed metallic electrodes, adopting contact-separation mode. The dots-distributed electrode based triboelectric nanogenerator (D-TENG) could be easily integrated with body and cloth, such as on the skin and under foot, to sense a broad range of activity related strain information. The D-TENGs enable accurate detecting a broad range pressure from ∼5 kPa to ∼50 kPa with open circuit voltage variation from several volts to tens of volts, and thus allow monitoring body daily actives such as joints’ bending, walking and running. These devices maintain stable and high-level signal outputs even after thousands cycles of measurement, proving the good stability. Simultaneously, the mechanical energy produced by our body motions could also be recollected by the D-TENG sensor for energy harvesting. Under a constant tapping by finger (39.59 kPa), the induced voltage is sufficient to light up 15 LEDs. The stretchable D-TENG sensor indicates its great potential in motion monitoring and mechanical energy harvesting.
{"title":"Stretchable Triboelectric Nanogenerators for Energy Harvesting and Motion Monitoring","authors":"Jiahui He;Yiming Liu;Dengfeng Li;Kuanming Yao;Zhan Gao;Xinge Yu","doi":"10.1109/OJNANO.2020.3019425","DOIUrl":"https://doi.org/10.1109/OJNANO.2020.3019425","url":null,"abstract":"Motion monitoring by flexible strain or pressure sensors have been under spotlight in the field of wearable electronics. Based on triboelectric effect, generated energy from body contact and compression during daily movement can be used for both reflecting motion status and energy recollection. Here, we report a stretchable pressure sensor based on triboelectric effect and dots-distributed metallic electrodes, adopting contact-separation mode. The dots-distributed electrode based triboelectric nanogenerator (D-TENG) could be easily integrated with body and cloth, such as on the skin and under foot, to sense a broad range of activity related strain information. The D-TENGs enable accurate detecting a broad range pressure from ∼5 kPa to ∼50 kPa with open circuit voltage variation from several volts to tens of volts, and thus allow monitoring body daily actives such as joints’ bending, walking and running. These devices maintain stable and high-level signal outputs even after thousands cycles of measurement, proving the good stability. Simultaneously, the mechanical energy produced by our body motions could also be recollected by the D-TENG sensor for energy harvesting. Under a constant tapping by finger (39.59 kPa), the induced voltage is sufficient to light up 15 LEDs. The stretchable D-TENG sensor indicates its great potential in motion monitoring and mechanical energy harvesting.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2020-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/OJNANO.2020.3019425","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3514215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-31DOI: 10.1109/OJNANO.2020.3013431
Boliang Jia;Pan Li;Feifei Wang;Ho Yin Chan;Guanglie Zhang;Wen Jung Li
Microsphere-assisted nanoscopy has shown great potential in recent developments in the field of super-resolution imaging. The precise control of microspheres is leading to new discoveries that can help verify the theories behind the super-resolution imaging mechanism. However, microsphere imaging involves multiple planes that have different magnification factors, which affect the determination of the overall resolution of the image. In this study, we present a flexible probe-lens assembly scheme that uses a barium titanate glass microsphere, as well as various scanning stages that can be used to freely investigate the sample surface and perform large-area super-resolution imaging (80 μm × 60 μm). The obtained resolution using this assembly under water immersion condition is 130 nm. By investigating the relationship between the magnification factors and the corresponding focus position of the different feature patterns, a remarkable difference in the focusing characteristics between arbitrary and periodic patterns was revealed. Results demonstrate the universality of the proposed method for the quantitative selection of the best focused plane and determination of the corresponding magnification factor and resolution of a microsphere virtual image for any feature pattern. The findings provide additional insights into the interpretation of arbitrary nanostructures through 3D optical imaging.
{"title":"Determination of Microsphere-Lens Magnification Using Micro-Robotic Scanning Superlens Nanoscopy","authors":"Boliang Jia;Pan Li;Feifei Wang;Ho Yin Chan;Guanglie Zhang;Wen Jung Li","doi":"10.1109/OJNANO.2020.3013431","DOIUrl":"https://doi.org/10.1109/OJNANO.2020.3013431","url":null,"abstract":"Microsphere-assisted nanoscopy has shown great potential in recent developments in the field of super-resolution imaging. The precise control of microspheres is leading to new discoveries that can help verify the theories behind the super-resolution imaging mechanism. However, microsphere imaging involves multiple planes that have different magnification factors, which affect the determination of the overall resolution of the image. In this study, we present a flexible probe-lens assembly scheme that uses a barium titanate glass microsphere, as well as various scanning stages that can be used to freely investigate the sample surface and perform large-area super-resolution imaging (80 μm × 60 μm). The obtained resolution using this assembly under water immersion condition is 130 nm. By investigating the relationship between the magnification factors and the corresponding focus position of the different feature patterns, a remarkable difference in the focusing characteristics between arbitrary and periodic patterns was revealed. Results demonstrate the universality of the proposed method for the quantitative selection of the best focused plane and determination of the corresponding magnification factor and resolution of a microsphere virtual image for any feature pattern. The findings provide additional insights into the interpretation of arbitrary nanostructures through 3D optical imaging.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2020-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/OJNANO.2020.3013431","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3490310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-23DOI: 10.1109/OJNANO.2020.3011637
Supriyo Bandyopadhyay
The search for a binary switch that is more energy-efficient than a transistor has led to many ideas, notable among which is the notion of using a nanomagnet with two stable magnetization orientations that will encode the binary bits 0 and 1. The nanomagnet is switched between them with electrically generated mechanical strain. A tiny amount of voltage is required for switching, with energy dissipation on the order of a few to few tens of aJ. Logic gates and memory, predicated on this technology, have been demonstrated in our group. While they indeed dissipate very little energy, they are unfortunately plagued by unacceptably high switching error probability that hinders their application in most types of Boolean logic. Fortunately, they can still be used in applications that are more forgiving of switching errors, e.g. probabilistic computing, analog arithmetic circuits, belief networks, artificial neurons, restricted Boltzmann machines, image processing, and others where the collective activity of many devices acting cooperatively elicit the computing or signal processing function and the failure of a single or few devices does not matter critically. These ultra-energy-efficient strain-switched nanomagnets can also be used for non-computing devices such as microwave oscillators that perform better than spin-torque-nano-oscillators. This short review provides an introduction to this exciting burgeoning field.
{"title":"Straintronics: Digital and Analog Electronics With Strain-Switched Nanomagnets","authors":"Supriyo Bandyopadhyay","doi":"10.1109/OJNANO.2020.3011637","DOIUrl":"https://doi.org/10.1109/OJNANO.2020.3011637","url":null,"abstract":"The search for a binary switch that is more energy-efficient than a transistor has led to many ideas, notable among which is the notion of using a nanomagnet with two stable magnetization orientations that will encode the binary bits 0 and 1. The nanomagnet is switched between them with electrically generated mechanical strain. A tiny amount of voltage is required for switching, with energy dissipation on the order of a few to few tens of aJ. Logic gates and memory, predicated on this technology, have been demonstrated in our group. While they indeed dissipate very little energy, they are unfortunately plagued by unacceptably high switching error probability that hinders their application in most types of Boolean logic. Fortunately, they can still be used in applications that are more forgiving of switching errors, e.g. probabilistic computing, analog arithmetic circuits, belief networks, artificial neurons, restricted Boltzmann machines, image processing, and others where the collective activity of many devices acting cooperatively elicit the computing or signal processing function and the failure of a single or few devices does not matter critically. These ultra-energy-efficient strain-switched nanomagnets can also be used for non-computing devices such as microwave oscillators that perform better than spin-torque-nano-oscillators. This short review provides an introduction to this exciting burgeoning field.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2020-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/OJNANO.2020.3011637","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3504936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-16DOI: 10.1109/OJNANO.2020.3009882
Rahul Ramamurti;Ram P. Gandhiraman;Arlene Lopez;Pranay Doshi;Dennis Nordlund;Beomseok Kim;M. Meyyappan
An atmospheric pressure plasma based printer is described as an alternative to conventional techniques including inkjet printing. The approach is demonstrated to be capable of printing various nanomaterials, and adjusting the plasma parameters, carrier gas flows and the physical parameters of the inks or nanomaterial suspensions can optimize the print quality. Raman analysis was used to characterize the oxide materials and carbon nanotubes printed using this technique, revealing high quality prints. The printed carbon nanotubes were used in a gas sensor chip and shown to provide good ammonia detection capability.
{"title":"Atmospheric Pressure Plasma Printing of Nanomaterials for <italic>IoT</italic> Applications","authors":"Rahul Ramamurti;Ram P. Gandhiraman;Arlene Lopez;Pranay Doshi;Dennis Nordlund;Beomseok Kim;M. Meyyappan","doi":"10.1109/OJNANO.2020.3009882","DOIUrl":"https://doi.org/10.1109/OJNANO.2020.3009882","url":null,"abstract":"An atmospheric pressure plasma based printer is described as an alternative to conventional techniques including inkjet printing. The approach is demonstrated to be capable of printing various nanomaterials, and adjusting the plasma parameters, carrier gas flows and the physical parameters of the inks or nanomaterial suspensions can optimize the print quality. Raman analysis was used to characterize the oxide materials and carbon nanotubes printed using this technique, revealing high quality prints. The printed carbon nanotubes were used in a gas sensor chip and shown to provide good ammonia detection capability.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2020-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/OJNANO.2020.3009882","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3500261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This work comprises of design and simulation of multi-channel line tunnel field-effect transistors (mCLTFETs) by scaling inter-gate separation (IGS) and overlapped source (L OV