Pub Date : 2021-10-14DOI: 10.1109/OJNANO.2021.3119913
Heeyuen Koh;Jae Gyung Lee;Jae Young Lee;Ryan Kim;Osamu Tabata;Jin-Woo Kim;DO-Nyun Kim
Designing a structure in nanoscale with desired shape and properties has been enabled by structural DNA nanotechnology. Design strategies in this research field have evolved to interpret various aspects of increasingly more complex nanoscale assembly and to realize molecular-level functionality by exploring static to dynamic characteristics of the target structure. Computational tools have naturally been of significant interest as they are essential to achieve a fine control over both shape and physicochemical properties of the structure. Here, we review the basic design principles of structural DNA nanotechnology together with its computational analysis and design tools.
{"title":"Design Approaches and Computational Tools for DNA Nanostructures","authors":"Heeyuen Koh;Jae Gyung Lee;Jae Young Lee;Ryan Kim;Osamu Tabata;Jin-Woo Kim;DO-Nyun Kim","doi":"10.1109/OJNANO.2021.3119913","DOIUrl":"https://doi.org/10.1109/OJNANO.2021.3119913","url":null,"abstract":"Designing a structure in nanoscale with desired shape and properties has been enabled by structural DNA nanotechnology. Design strategies in this research field have evolved to interpret various aspects of increasingly more complex nanoscale assembly and to realize molecular-level functionality by exploring static to dynamic characteristics of the target structure. Computational tools have naturally been of significant interest as they are essential to achieve a fine control over both shape and physicochemical properties of the structure. Here, we review the basic design principles of structural DNA nanotechnology together with its computational analysis and design tools.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"2 ","pages":"86-100"},"PeriodicalIF":1.7,"publicationDate":"2021-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9573317","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3481058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
High-k metal gate technology improves the performance and reduces the gate leakage current of metal-oxide-semiconductor field-effect transistors (MOSFETs). This study investigated four different work function metal (WFM) stacks in the gate of fin field-effect transistors (FinFETs) on the same substrate. These devices not only successfully produced distinct levels of threshold voltages (|V t |) but also converted n- to p-type features merely by adding p-type WFM in the gate of the MOSFETs. All of the devices satisfied short-channel effects with shrinking channel length. The gate-to-body electric field induced drain leakage due to the nature of bulk FinFETs. However, the n- and p-type gate stacks presented different gate current leakage. For reliability, hot carrier injection (HCI) could have a higher reliability impact than the negative-bias temperature instability (NBTI) for p-MOSFET, although the stress voltage of HCI was roughly half that of the NBTI test. This multi-threshold voltage tuning allows designers to design CMOS and choose the trade-off between low power consumption and high performance on the same platform.
{"title":"Modifying Threshold Voltages to n- and p- Type FinFETs by Work Function Metal Stacks","authors":"Wen-Teng Chang;Meng-His Li;Chun-Hao Hsu;Wen-Chin Lin;Wen-Kuan Yeh","doi":"10.1109/OJNANO.2021.3109897","DOIUrl":"https://doi.org/10.1109/OJNANO.2021.3109897","url":null,"abstract":"High-k metal gate technology improves the performance and reduces the gate leakage current of metal-oxide-semiconductor field-effect transistors (MOSFETs). This study investigated four different work function metal (WFM) stacks in the gate of fin field-effect transistors (FinFETs) on the same substrate. These devices not only successfully produced distinct levels of threshold voltages (|V\u0000<sub>t</sub>\u0000|) but also converted n- to p-type features merely by adding p-type WFM in the gate of the MOSFETs. All of the devices satisfied short-channel effects with shrinking channel length. The gate-to-body electric field induced drain leakage due to the nature of bulk FinFETs. However, the n- and p-type gate stacks presented different gate current leakage. For reliability, hot carrier injection (HCI) could have a higher reliability impact than the negative-bias temperature instability (NBTI) for p-MOSFET, although the stress voltage of HCI was roughly half that of the NBTI test. This multi-threshold voltage tuning allows designers to design CMOS and choose the trade-off between low power consumption and high performance on the same platform.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"2 ","pages":"72-77"},"PeriodicalIF":1.7,"publicationDate":"2021-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/9316416/09528922.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3482478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-08-16DOI: 10.1109/OJNANO.2021.3104961
Baocheng Wang;Xuelian Wei;Junhuan Chen;Zhihao Yuan;Yapeng Shi;Zhiyi Wu;Zhong Lin Wang
Acceleration sensors have a wide variety of applications for industrial engineering, biology and navigation. However, passive sensing, narrow detection range, large size, and high manufacturing cost curb their further development. Here, we present a miniaturized acceleration sensor (MAS) with rationally patterned electrodes, based on the single electrode triboelectric mechanism, featuring small size, high accuracy, large detection scale, and environmental friendliness. A stainless-steel ball, as the moving part of the MAS, experiences physical movement that is converted into an electrical signal. Equipped with rationally patterned electrodes, the MAS retains the smallest size and lowest weight compared with the currently reported self-powered acceleration sensors. Benefiting from the voltage-relationship-based direction detection mechanism, eight directions can be identified by one TENG module. Consequently, rotated 22.5° relatively, two TENG modules enable the MAS to detect 16 directions. Moreover, accelerations ranging from 0.1 m/s 2 to 50 m/s 2 can be identified according to the relationship of response time and accelerations in the horizontal direction. The relationship is obtained through the measurements of the sum of output voltages ( VSOC ) for the four bottom electrodes with varying accelerations. In addition, no distinct decrease of VSOC is observed after continuously operating for 2000 circles, presenting excellent robustness. Hence, this cost-effective and rationally patterned MAS reveals great potential for human machine interaction, VR/AR (virtual/augmented reality), sports training, and smart city.
{"title":"Self-Powered Miniaturized Acceleration Sensor Based on Rationally Patterned Electrodes","authors":"Baocheng Wang;Xuelian Wei;Junhuan Chen;Zhihao Yuan;Yapeng Shi;Zhiyi Wu;Zhong Lin Wang","doi":"10.1109/OJNANO.2021.3104961","DOIUrl":"https://doi.org/10.1109/OJNANO.2021.3104961","url":null,"abstract":"Acceleration sensors have a wide variety of applications for industrial engineering, biology and navigation. However, passive sensing, narrow detection range, large size, and high manufacturing cost curb their further development. Here, we present a miniaturized acceleration sensor (MAS) with rationally patterned electrodes, based on the single electrode triboelectric mechanism, featuring small size, high accuracy, large detection scale, and environmental friendliness. A stainless-steel ball, as the moving part of the MAS, experiences physical movement that is converted into an electrical signal. Equipped with rationally patterned electrodes, the MAS retains the smallest size and lowest weight compared with the currently reported self-powered acceleration sensors. Benefiting from the voltage-relationship-based direction detection mechanism, eight directions can be identified by one TENG module. Consequently, rotated 22.5° relatively, two TENG modules enable the MAS to detect 16 directions. Moreover, accelerations ranging from 0.1 m/s\u0000<sup>2</sup>\u0000 to 50 m/s\u0000<sup>2</sup>\u0000 can be identified according to the relationship of response time and accelerations in the horizontal direction. The relationship is obtained through the measurements of the sum of output voltages (\u0000<italic>V<sub>SOC</sub></i>\u0000) for the four bottom electrodes with varying accelerations. In addition, no distinct decrease of \u0000<italic>V<sub>SOC</sub></i>\u0000 is observed after continuously operating for 2000 circles, presenting excellent robustness. Hence, this cost-effective and rationally patterned MAS reveals great potential for human machine interaction, VR/AR (virtual/augmented reality), sports training, and smart city.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"2 ","pages":"78-85"},"PeriodicalIF":1.7,"publicationDate":"2021-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/OJNANO.2021.3104961","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3482801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-07-07DOI: 10.1109/OJNANO.2021.3094761
He Wang;Nicoleta Cucu Laurenciu;Sorin Dan Cotofana
In the paper we propose a reconfigurable graphene-based Spiking Neural Network (SNN) architecture and a training methodology for initial synaptic weight values determination. The proposed graphene-based platform is flexible, comprising a programmable synaptic array which can be configured for different initial synaptic weights and plasticity functionalities and a spiking neuronal array, onto which various neural network structures can be mapped according to the application requirements and constraints. To demonstrate the validity of the synaptic weights training methodology and the suitability of the proposed SNN architecture for practical utilization, we consider character recognition and edge detection applications. In each case, the graphene-based platform is configured as per the application tailored SNN topology and initial state and SPICE simulated to evaluate its reaction to the applied input stimuli. For the first application, a 2-layer SNN is used to perform character recognition for 5 vowels. Our simulation indicates that the graphene-based SNN can achieve comparable recognition accuracy with the one delivered by a functionally equivalent Artificial Neural Network. Further, we reconfigure the architecture for a 3-layer SNN to perform edge detection on 2 grayscale images. SPICE simulation results indicate that the edge extraction results are close agreement with the one produced by classical edge detection operators. Our results suggest the feasibility and flexibility of the proposed approach for various application purposes. Moreover, the utilized graphene-based synapses and neurons operate at low supply voltage, consume low energy per spike, and exhibit small footprints, which are desired properties for largescale energy-efficient implementations.
{"title":"A Reconfigurable Graphene-Based Spiking Neural Network Architecture","authors":"He Wang;Nicoleta Cucu Laurenciu;Sorin Dan Cotofana","doi":"10.1109/OJNANO.2021.3094761","DOIUrl":"https://doi.org/10.1109/OJNANO.2021.3094761","url":null,"abstract":"In the paper we propose a reconfigurable graphene-based Spiking Neural Network (SNN) architecture and a training methodology for initial synaptic weight values determination. The proposed graphene-based platform is flexible, comprising a programmable synaptic array which can be configured for different initial synaptic weights and plasticity functionalities and a spiking neuronal array, onto which various neural network structures can be mapped according to the application requirements and constraints. To demonstrate the validity of the synaptic weights training methodology and the suitability of the proposed SNN architecture for practical utilization, we consider character recognition and edge detection applications. In each case, the graphene-based platform is configured as per the application tailored SNN topology and initial state and SPICE simulated to evaluate its reaction to the applied input stimuli. For the first application, a 2-layer SNN is used to perform character recognition for 5 vowels. Our simulation indicates that the graphene-based SNN can achieve comparable recognition accuracy with the one delivered by a functionally equivalent Artificial Neural Network. Further, we reconfigure the architecture for a 3-layer SNN to perform edge detection on 2 grayscale images. SPICE simulation results indicate that the edge extraction results are close agreement with the one produced by classical edge detection operators. Our results suggest the feasibility and flexibility of the proposed approach for various application purposes. Moreover, the utilized graphene-based synapses and neurons operate at low supply voltage, consume low energy per spike, and exhibit small footprints, which are desired properties for largescale energy-efficient implementations.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"2 ","pages":"59-71"},"PeriodicalIF":1.7,"publicationDate":"2021-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/OJNANO.2021.3094761","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3482962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-04-08DOI: 10.1109/OJNANO.2021.3071720
Na Liu;Ziheng Chen;Da Luo;Qiuhong Zhao;Tao Yue;Yuanyuan Liu;Xiaomao Li;Chen Yang;Haowen Jiang;Wen J. Li
Although inflammation is considered an important factor for promoting carcinogenesis, further evidence is still needed to draw definitive conclusions on its role in prostate cancer (PCa) development and progression. This study characterized the radius, specific membrane capacitance (SMC), and Youngs modulus of 20 patient-derived prostate cells, including 6 patients diagnosed with benign prostatic hyperplasia (BPH), 5 patients diagnosed with BPH accompanied with chronic inflammation (BCI), and 9 patients diagnosed with PCa. The characterized results show that the three groups of cells possess approximate radius value. Both BCI and PCa cells show larger SMC values than BPH cells. Only PCa cells possess lower Youngs modulus than BPH cells, the stiffness of which is approximate to that of BCI cells. Additionally, experiments have testified that inflammatory cytokine, (i.e. TNF- $alpha$ ) can induce the increase of cellular SMC values. The finds demonstrate that inflammation is linked to cancer promotion process and accompanied with cellular biophysical changes, providing a new insight into the effects of inflammation in promoting PCa.
{"title":"Inflammation Endows Benign Prostatic Hyperplasia Cells With Similar Physical Properties to Prostate Cancer Cells","authors":"Na Liu;Ziheng Chen;Da Luo;Qiuhong Zhao;Tao Yue;Yuanyuan Liu;Xiaomao Li;Chen Yang;Haowen Jiang;Wen J. Li","doi":"10.1109/OJNANO.2021.3071720","DOIUrl":"https://doi.org/10.1109/OJNANO.2021.3071720","url":null,"abstract":"Although inflammation is considered an important factor for promoting carcinogenesis, further evidence is still needed to draw definitive conclusions on its role in prostate cancer (PCa) development and progression. This study characterized the radius, specific membrane capacitance (SMC), and Youngs modulus of 20 patient-derived prostate cells, including 6 patients diagnosed with benign prostatic hyperplasia (BPH), 5 patients diagnosed with BPH accompanied with chronic inflammation (BCI), and 9 patients diagnosed with PCa. The characterized results show that the three groups of cells possess approximate radius value. Both BCI and PCa cells show larger SMC values than BPH cells. Only PCa cells possess lower Youngs modulus than BPH cells, the stiffness of which is approximate to that of BCI cells. Additionally, experiments have testified that inflammatory cytokine, (i.e. TNF-\u0000<inline-formula><tex-math>$alpha$</tex-math></inline-formula>\u0000) can induce the increase of cellular SMC values. The finds demonstrate that inflammation is linked to cancer promotion process and accompanied with cellular biophysical changes, providing a new insight into the effects of inflammation in promoting PCa.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"2 ","pages":"52-58"},"PeriodicalIF":1.7,"publicationDate":"2021-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/OJNANO.2021.3071720","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3494094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Van der Waals p-n heterojunctions, consist of atomically thin two-dimensional (2D) layer semiconductors, have opened a promising avenue for the realization of ultrathin and ultralight photovoltaic solar cells. This feature enables them particularly be suitable as the micro/nanoscale solar energy-conversion units integrated in wireless power supply micro/nano-systems. However, solar energy harvest in these heterojunctions is hindered by inherent weak interlayer interaction at such ultrathin thickness. Herein, a novel integrated strategy by embedding metallic plasmonic pentamers optical nano-antenna array (ONAA) onto overlap region of black phosphorus-molybdenum disulfide (BP-MoS 2 ) p-n heterojunction is firstly exploited under both a near-infrared laser (λ = 830 nm) and standardized AM1.5G solar irradiation. Results show that profiting from plasmon-induced “hot” electrons and thermal field generating from gigantic near-field enhancement in 15 nm-ultrashort nanogap ONAAs and high intrinsic build-in field in atomically overlap region, this integrated configuration displays enhanced photovoltaic properties. Maximum short-circuits current (I sc = 0.53 μA) and open circuit voltage (V oc = 0.2 V) had been attained. Additional fill factor of 14% and double power conversion efficiencies amplification are measured via comparison of device without/with ONAAs. These findings strongly demonstrate this reliable enhancement strategy with integration of plasmonic physics into 2D heterojunctions for realizing energy harvesting unit in the wireless power supply micro/nano-systems.
Van der Waals p-n异质结由原子薄的二维(2D)层半导体组成，为实现超薄和超轻光伏太阳能电池开辟了一条有希望的途径。这一特性使它们特别适合作为集成在无线电源微/纳米系统中的微/纳米级太阳能转换单元。然而，在这种超薄厚度下，太阳能在这些异质结中的收获受到固有的弱层间相互作用的阻碍。本文首次在近红外激光(λ = 830 nm)和标准AM1.5G太阳辐照下，将金属等离子体五聚体光学纳米天线阵列(ONAA)嵌入黑磷-二硫化钼(BP-MoS2) p-n异质结重叠区域。结果表明，利用等离子体诱导的“热”电子和15 nm超短纳米间隙ONAAs中巨大近场增强产生的热场，以及原子重叠区域的高本征内建场，该集成结构具有增强的光伏性能。得到了最大短路电流(Isc = 0.53 μA)和开路电压(Voc = 0.2 V)。通过比较无/有onaa的器件，测量了14%的附加填充系数和双倍的功率转换效率放大。这些发现有力地证明了将等离子体物理集成到二维异质结中实现无线供电微/纳米系统中的能量收集单元的可靠增强策略。
{"title":"Plasmon-Enhanced Photovoltaic Characteristics of Black Phosphorus-MoS<sub>2</sub> Heterojunction","authors":"Hou Chaojian;Li Bo;Li Qingwei;Yang Lijun;Wang Yang;Yang Zhan;Dong Lixin","doi":"10.1109/OJNANO.2021.3062495","DOIUrl":"https://doi.org/10.1109/OJNANO.2021.3062495","url":null,"abstract":"Van der Waals p-n heterojunctions, consist of atomically thin two-dimensional (2D) layer semiconductors, have opened a promising avenue for the realization of ultrathin and ultralight photovoltaic solar cells. This feature enables them particularly be suitable as the micro/nanoscale solar energy-conversion units integrated in wireless power supply micro/nano-systems. However, solar energy harvest in these heterojunctions is hindered by inherent weak interlayer interaction at such ultrathin thickness. Herein, a novel integrated strategy by embedding metallic plasmonic pentamers optical nano-antenna array (ONAA) onto overlap region of black phosphorus-molybdenum disulfide (BP-MoS\u0000<sub>2</sub>\u0000) p-n heterojunction is firstly exploited under both a near-infrared laser (λ = 830 nm) and standardized AM1.5G solar irradiation. Results show that profiting from plasmon-induced “hot” electrons and thermal field generating from gigantic near-field enhancement in 15 nm-ultrashort nanogap ONAAs and high intrinsic build-in field in atomically overlap region, this integrated configuration displays enhanced photovoltaic properties. Maximum short-circuits current (I\u0000<sub>sc</sub>\u0000 = 0.53 μA) and open circuit voltage (V\u0000<sub>oc</sub>\u0000 = 0.2 V) had been attained. Additional fill factor of 14% and double power conversion efficiencies amplification are measured via comparison of device without/with ONAAs. These findings strongly demonstrate this reliable enhancement strategy with integration of plasmonic physics into 2D heterojunctions for realizing energy harvesting unit in the wireless power supply micro/nano-systems.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"2 ","pages":"41-51"},"PeriodicalIF":1.7,"publicationDate":"2021-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/OJNANO.2021.3062495","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3494272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The physical unclonable function (PUF) is a promising low-cost hardware security primitive. Recent advances in nanotechnology have provided new opportunities for nanoscale PUF circuits. The resistive random access memory (RRAM) is extensively used in nanoscale circuits due to its low cost, non-volatility and easy integration with CMOS. This paper proposes a novel tristate hybrid PUF (TH-PUF) design based on a one-transistor-one-RRAM (1T1R) cell; this cell can be configured into two weak PUFs and a strong PUF using few control signals. To assess the proposed PUF design, a compact RRAM model at UMC 65 nm technology is employed. Simulation results show that the proposed TH-PUF achieves good uniqueness, reliability as well as a higher gate usability compared with an entire CMOS PUFs. The number of challenge response pairs (CRPs) of the proposed TH-PUF is larger than other RRAM-based PUFs. Moreover, the TH-PUF is more resistant to a modeling machine learning attack than traditional PUF designs.
{"title":"A Physical Unclonable Function Using a Configurable Tristate Hybrid Scheme With Non-Volatile Memory","authors":"Jiang Li;Yijun Cui;Chongyan Gu;Chenghua Wang;Weiqiang Liu;Fabrizio Lombardi","doi":"10.1109/OJNANO.2021.3058169","DOIUrl":"https://doi.org/10.1109/OJNANO.2021.3058169","url":null,"abstract":"The physical unclonable function (PUF) is a promising low-cost hardware security primitive. Recent advances in nanotechnology have provided new opportunities for nanoscale PUF circuits. The resistive random access memory (RRAM) is extensively used in nanoscale circuits due to its low cost, non-volatility and easy integration with CMOS. This paper proposes a novel tristate hybrid PUF (TH-PUF) design based on a one-transistor-one-RRAM (1T1R) cell; this cell can be configured into two weak PUFs and a strong PUF using few control signals. To assess the proposed PUF design, a compact RRAM model at UMC 65 nm technology is employed. Simulation results show that the proposed TH-PUF achieves good uniqueness, reliability as well as a higher gate usability compared with an entire CMOS PUFs. The number of challenge response pairs (CRPs) of the proposed TH-PUF is larger than other RRAM-based PUFs. Moreover, the TH-PUF is more resistant to a modeling machine learning attack than traditional PUF designs.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"2 ","pages":"31-40"},"PeriodicalIF":1.7,"publicationDate":"2021-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/OJNANO.2021.3058169","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3493151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We investigated a high electron mobility Ge FinFET fabricated by defect-free and roughness-free atomic layer neutral beam etching (NBE) compared with one fabricated by conventional plasma etching (PE). The etching interface roughness and defect were estimated by high-resolution transmission electron microscopy (TEM). In the case of using atomic layer defect-free NBE, the root-mean-square roughness of the Ge Fin sidewall surface is 1/3 times smaller than that using PE. Then, the electron mobility of Ge FinFET was improved by 1.65 times compared with that of a PE etched FinFET sample. For the subthreshold swing, the defect density of the interface between the Ge and gate dielectric film was improved by NBE. Ioff average currents of NBE and PE were around 18.1 and 57.6 nA/μm, respectively. As a result, NBE reduces the off-leakage current to 1/3 times less than PE. This corresponded to the differences in surface roughness and defect generation between NBE and PE. Therefore, we found that NBE could achieve a good performance by defect-free and atomically-flat etching the surface.
{"title":"High Electron Mobility Germanium FinFET Fabricated by Atomic Layer Defect-Free and Roughness-Free Etching","authors":"Daisuke Ohori;Takuya Fujii;Shuichi Noda;Wataru Mizubayashi;Kazuhiko Endo;Yao-Jen Lee;Jenn-Hwan Tarng;Yiming Li;Seiji Samukawa","doi":"10.1109/OJNANO.2021.3055150","DOIUrl":"https://doi.org/10.1109/OJNANO.2021.3055150","url":null,"abstract":"We investigated a high electron mobility Ge FinFET fabricated by defect-free and roughness-free atomic layer neutral beam etching (NBE) compared with one fabricated by conventional plasma etching (PE). The etching interface roughness and defect were estimated by high-resolution transmission electron microscopy (TEM). In the case of using atomic layer defect-free NBE, the root-mean-square roughness of the Ge Fin sidewall surface is 1/3 times smaller than that using PE. Then, the electron mobility of Ge FinFET was improved by 1.65 times compared with that of a PE etched FinFET sample. For the subthreshold swing, the defect density of the interface between the Ge and gate dielectric film was improved by NBE. Ioff average currents of NBE and PE were around 18.1 and 57.6 nA/μm, respectively. As a result, NBE reduces the off-leakage current to 1/3 times less than PE. This corresponded to the differences in surface roughness and defect generation between NBE and PE. Therefore, we found that NBE could achieve a good performance by defect-free and atomically-flat etching the surface.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"2 ","pages":"26-30"},"PeriodicalIF":1.7,"publicationDate":"2021-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/OJNANO.2021.3055150","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3493495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-01-12DOI: 10.1109/OJNANO.2021.3050496
M Arifur Rahman;Aaron T. Ohta
Microrobots are promising tools for applications that require micromanipulation, such as single-cell manipulation and surgery, tissue engineering, and desktop manufacturing. This paper briefly reviews common microrobot actuation mechanisms, then reviews current progress in several capabilities that are desirable for micromanipulation, with an emphasis on optothermal microrobots.
{"title":"Micromanipulation With Microrobots","authors":"M Arifur Rahman;Aaron T. Ohta","doi":"10.1109/OJNANO.2021.3050496","DOIUrl":"https://doi.org/10.1109/OJNANO.2021.3050496","url":null,"abstract":"Microrobots are promising tools for applications that require micromanipulation, such as single-cell manipulation and surgery, tissue engineering, and desktop manufacturing. This paper briefly reviews common microrobot actuation mechanisms, then reviews current progress in several capabilities that are desirable for micromanipulation, with an emphasis on optothermal microrobots.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"2 ","pages":"8-15"},"PeriodicalIF":1.7,"publicationDate":"2021-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/OJNANO.2021.3050496","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3483699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-01-01DOI: 10.1109/OJNANO.2022.3150710
Presents the 2021 subject/author index for this publication.
给出了本出版物2021年的主题/作者索引。
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