Pub Date : 2023-01-01DOI: 10.1109/OJNANO.2024.3362684
{"title":"2023 Index IEEE Open Journal of Nanotechnology Vol. 4","authors":"","doi":"10.1109/OJNANO.2024.3362684","DOIUrl":"https://doi.org/10.1109/OJNANO.2024.3362684","url":null,"abstract":"","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"1-6"},"PeriodicalIF":1.7,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10429774","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139710584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper presents an approach to evaluate capacitance developed by perforated membrane of RF MEMS switch with high accuracy. An analytical model is developed for both upstate and downstate of switch by including parasitic and fringing field capacitance in parallel plate capacitance model. The proposed analytical model includes the ligament efficiency term directly in the formula which reduce the efforts to calculate it individually for various perforation sizes. The capacitance analysis has been carried out by varying the physical parameters to optimize the switch dimensions and these analytical results are compared with the simulation results carried out by 3D FEM tool COMSOL multiphysics for validation. The proposed analytical model results are then compared with benchmark models to understand the efficiency of proposed model in estimating the up and downstate capacitances. The proposed analytical model proved to be good with less error percentage of 2.13% at upstate and 2.59% at downstate whereas the other benchmark models gives greater than 5% error. The switch is then fabricated using 4-mask surface micromachining process and experimental evaluation of capacitance at both upstate and downstate is carried out by DC probe station. Experimentally, the upstate capacitance is obtained as 37.4 fF and downstate as 2.43 pF and the analytical models exhibited low error percentage of 3.95% at upstate and 2.05% at downstate condition for µ = 0.5.
{"title":"Modelling, Fabrication and Testing of RF Micro-Electro-Mechanical-Systems Switch","authors":"Srinivasa Rao Karumuri;P. Ashok Kumar;Girija Sravani Kondavitee;Aime Lay-Ekuakille","doi":"10.1109/OJNANO.2022.3232182","DOIUrl":"https://doi.org/10.1109/OJNANO.2022.3232182","url":null,"abstract":"This paper presents an approach to evaluate capacitance developed by perforated membrane of RF MEMS switch with high accuracy. An analytical model is developed for both upstate and downstate of switch by including parasitic and fringing field capacitance in parallel plate capacitance model. The proposed analytical model includes the ligament efficiency term directly in the formula which reduce the efforts to calculate it individually for various perforation sizes. The capacitance analysis has been carried out by varying the physical parameters to optimize the switch dimensions and these analytical results are compared with the simulation results carried out by 3D FEM tool COMSOL multiphysics for validation. The proposed analytical model results are then compared with benchmark models to understand the efficiency of proposed model in estimating the up and downstate capacitances. The proposed analytical model proved to be good with less error percentage of 2.13% at upstate and 2.59% at downstate whereas the other benchmark models gives greater than 5% error. The switch is then fabricated using 4-mask surface micromachining process and experimental evaluation of capacitance at both upstate and downstate is carried out by DC probe station. Experimentally, the upstate capacitance is obtained as 37.4 fF and downstate as 2.43 pF and the analytical models exhibited low error percentage of 3.95% at upstate and 2.05% at downstate condition for µ = 0.5.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"81-94"},"PeriodicalIF":1.7,"publicationDate":"2022-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/09999329.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3515039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-23DOI: 10.1109/OJNANO.2022.3224652
Attila Bonyar;Brajesh Kumar Kaushik;James E. Morris;Markondeyaraj Pulugurtha
The papers in this special section focus on nanopackaging. It begins with three reviews of diverse nanoscale technologies and then moves on to research papers focused primarily on nanomaterials for on-chip interconnect and noise abatement.
{"title":"Guest Editorial: Nanopackaging Part II","authors":"Attila Bonyar;Brajesh Kumar Kaushik;James E. Morris;Markondeyaraj Pulugurtha","doi":"10.1109/OJNANO.2022.3224652","DOIUrl":"10.1109/OJNANO.2022.3224652","url":null,"abstract":"The papers in this special section focus on nanopackaging. It begins with three reviews of diverse nanoscale technologies and then moves on to research papers focused primarily on nanomaterials for on-chip interconnect and noise abatement.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"166-168"},"PeriodicalIF":1.7,"publicationDate":"2022-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9997810","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62889644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-22DOI: 10.1109/OJNANO.2022.3231436
Shipra Saini;Namita Bindal;Brajesh Kumar Kaushik
Magnetic anisotropy energy (MAE) of two-dimensional (2D) magnetic materials is the key parameter for designing next-generation spintronic devices. Here, using first-principle calculations based on density functional theory (DFT), the variance in MAE and other magnetic properties is observed for transition metal (TM) doped bismuth monolayer (bismuthene). This doped system shows a significant modulation in the magnetic moment, MAE, Curie temperature Tc , and charge transfer. However, Mn-doped bismuthene exhibits half-metallicity with a maximum magnetic moment of 4μB (Bohr magneton) that is 17% higher than Fe-doped bismuthene. The maximum MAE extracted for Mn-doped bismuthene is 27.51% higher than the Ti-doped system. On the basis of these findings, the electronic and magnetic characteristics of Mn-doped bismuthene (Mn-Bi) and monolayer CrI 3 van der Waals (vdW) heterostructures are also investigated. In Mn-Bi/CrI 3 van der Waals heterostructure, the half-metal Mn-Bi can induce the half-metallicity in CrI 3 through charge transfer. Compared to other doped systems, Mn-Bi presents the most favorable magnetic properties. Thus, Mn-Bi/CrI 3 heterostructure paves the path for the development of spintronic devices.
二维磁性材料的磁各向异性能(MAE)是设计下一代自旋电子器件的关键参数。本文利用基于密度泛函理论(DFT)的第一性原理计算，观察了过渡金属(TM)掺杂铋单层(bismuthene)的MAE和其他磁性能的变化。该掺杂体系在磁矩、MAE、居里温度Tc和电荷转移方面表现出明显的调制作用。mn掺杂铋具有半金属性，最大磁矩为4μB(玻尔磁子)，比fe掺杂铋高17%。mn掺杂铋体系的最大MAE提取率比ti掺杂体系高27.51%。在此基础上，研究了mn掺杂铋(Mn-Bi)和单层CrI3 van der Waals (vdW)异质结构的电子和磁特性。在Mn-Bi/CrI3范德华异质结构中，半金属Mn-Bi可以通过电荷转移诱导CrI3的半金属丰度。与其他掺杂体系相比，Mn-Bi表现出最有利的磁性能。因此，Mn-Bi/CrI3异质结构为自旋电子器件的发展铺平了道路。
{"title":"Transition Metal Doped Bismuthene and Mn-Bi/CrI3 Heterostructure for High Anisotropy Energy and Half-Metallicity","authors":"Shipra Saini;Namita Bindal;Brajesh Kumar Kaushik","doi":"10.1109/OJNANO.2022.3231436","DOIUrl":"https://doi.org/10.1109/OJNANO.2022.3231436","url":null,"abstract":"Magnetic anisotropy energy (MAE) of two-dimensional (2D) magnetic materials is the key parameter for designing next-generation spintronic devices. Here, using first-principle calculations based on density functional theory (DFT), the variance in MAE and other magnetic properties is observed for transition metal (TM) doped bismuth monolayer (bismuthene). This doped system shows a significant modulation in the magnetic moment, MAE, Curie temperature \u0000<italic>T<sub>c</sub></i>\u0000, and charge transfer. However, Mn-doped bismuthene exhibits half-metallicity with a maximum magnetic moment of 4μB (Bohr magneton) that is 17% higher than Fe-doped bismuthene. The maximum MAE extracted for Mn-doped bismuthene is 27.51% higher than the Ti-doped system. On the basis of these findings, the electronic and magnetic characteristics of Mn-doped bismuthene (Mn-Bi) and monolayer CrI\u0000<sub>3</sub>\u0000 van der Waals (vdW) heterostructures are also investigated. In Mn-Bi/CrI\u0000<sub>3</sub>\u0000 van der Waals heterostructure, the half-metal Mn-Bi can induce the half-metallicity in CrI\u0000<sub>3</sub>\u0000 through charge transfer. Compared to other doped systems, Mn-Bi presents the most favorable magnetic properties. Thus, Mn-Bi/CrI\u0000<sub>3</sub>\u0000 heterostructure paves the path for the development of spintronic devices.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"1-9"},"PeriodicalIF":1.7,"publicationDate":"2022-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/09996563.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3507987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-14DOI: 10.1109/OJNANO.2022.3224346
Masaharu Shiratani;John P. Verboncoeur;Jong-Shinn Wu
The papers in this special section shed light on recent progresses on nanoscience and nanotechnology based on low pressure plasma and atmospheric plasma, whereas it also suggests directions for future research.
{"title":"Guest Editorial: Emerging Plasma Nanotechnologies","authors":"Masaharu Shiratani;John P. Verboncoeur;Jong-Shinn Wu","doi":"10.1109/OJNANO.2022.3224346","DOIUrl":"10.1109/OJNANO.2022.3224346","url":null,"abstract":"The papers in this special section shed light on recent progresses on nanoscience and nanotechnology based on low pressure plasma and atmospheric plasma, whereas it also suggests directions for future research.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"131-132"},"PeriodicalIF":1.7,"publicationDate":"2022-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9985437","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62888791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-05DOI: 10.1109/OJNANO.2022.3226603
Shuoyan Liu;Bing Xue;Wenyuan Yan;Alina Y. Rwei;Changsheng Wu
With a growing focus on properties of softness, miniaturization, and intelligence, extensive research has been focusing on constructing wearable electronic devices facilitating comfort, wearable health monitoring and diagnosis. Among recent progress in the development of wearable bioelectronics, wearable near-infrared spectroscopy (NIRS) devices demonstrate wide implementation possibilities in multiple health monitoring scenarios. Throughout the years, multiple design strategies have assisted in developing wearable NIRS devices with high wearing comfortability and miniaturized size. This review summarizes the principle of NIRS technology, recent advances in design strategies towards soft, wearable, miniaturized NIRS devices, and the future potential development directions. Based on the discussion of different design strategies, including modular device design, flexible hybrid electronics, and materials innovation, we also pinpoint some development directions for wearable NIRS. The reviewed and proposed research efforts may enhance the applicability and capability of NIRS as an important technology for digital health.
{"title":"Recent Advances and Design Strategies Towards Wearable Near-Infrared Spectroscopy","authors":"Shuoyan Liu;Bing Xue;Wenyuan Yan;Alina Y. Rwei;Changsheng Wu","doi":"10.1109/OJNANO.2022.3226603","DOIUrl":"https://doi.org/10.1109/OJNANO.2022.3226603","url":null,"abstract":"With a growing focus on properties of softness, miniaturization, and intelligence, extensive research has been focusing on constructing wearable electronic devices facilitating comfort, wearable health monitoring and diagnosis. Among recent progress in the development of wearable bioelectronics, wearable near-infrared spectroscopy (NIRS) devices demonstrate wide implementation possibilities in multiple health monitoring scenarios. Throughout the years, multiple design strategies have assisted in developing wearable NIRS devices with high wearing comfortability and miniaturized size. This review summarizes the principle of NIRS technology, recent advances in design strategies towards soft, wearable, miniaturized NIRS devices, and the future potential development directions. Based on the discussion of different design strategies, including modular device design, flexible hybrid electronics, and materials innovation, we also pinpoint some development directions for wearable NIRS. The reviewed and proposed research efforts may enhance the applicability and capability of NIRS as an important technology for digital health.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"25-35"},"PeriodicalIF":1.7,"publicationDate":"2022-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/09969912.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3491642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-02DOI: 10.1109/OJNANO.2022.3223413
Orestis Liolis;Vassilios A. Mardiris;Ioannis G. Karafyllidis;Sorin Cotofana;Georgios Ch. Sirakoulis
Quantum-dot Cellular Automata (QCA) provide very high scale integration potential, very high switching frequency, and have extremely low power demands, which make the QCA technology quite attractive for the design and implementation of large-scale, high-performance nanoelectronic circuits. However, state-of-the-art QCA circuit designs were not derived by following a set of universal design rules, as is the case of CMOS circuits, and, as a result, it is either impossible or very difficult to combine QCA circuit blocks in effective large-scale circuits. In this paper, we introduce a novel automated design methodology, which builds upon a QCA specific universal design rules set. The proposed methodology assumes the availability of a generic QCA crossbar architecture and provides the means to customize it in order to implement any given logic function. The programming principles and the flow of the proposed automated design tool for crossbar QCA circuits are described analytically and we apply the proposed automated design method for the design of both combinatorial and sequential circuits. The obtained designs demonstrate that the proposed method is functional, easy to use, and provides the desired QCA circuit design unification.
{"title":"Methodology for Automated Design of Quantum-Dot Cellular Automata Circuits","authors":"Orestis Liolis;Vassilios A. Mardiris;Ioannis G. Karafyllidis;Sorin Cotofana;Georgios Ch. Sirakoulis","doi":"10.1109/OJNANO.2022.3223413","DOIUrl":"10.1109/OJNANO.2022.3223413","url":null,"abstract":"Quantum-dot Cellular Automata (QCA) provide very high scale integration potential, very high switching frequency, and have extremely low power demands, which make the QCA technology quite attractive for the design and implementation of large-scale, high-performance nanoelectronic circuits. However, state-of-the-art QCA circuit designs were not derived by following a set of universal design rules, as is the case of CMOS circuits, and, as a result, it is either impossible or very difficult to combine QCA circuit blocks in effective large-scale circuits. In this paper, we introduce a novel automated design methodology, which builds upon a QCA specific universal design rules set. The proposed methodology assumes the availability of a generic QCA crossbar architecture and provides the means to customize it in order to implement any given logic function. The programming principles and the flow of the proposed automated design tool for crossbar QCA circuits are described analytically and we apply the proposed automated design method for the design of both combinatorial and sequential circuits. The obtained designs demonstrate that the proposed method is functional, easy to use, and provides the desired QCA circuit design unification.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"162-171"},"PeriodicalIF":1.7,"publicationDate":"2022-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9968311","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62888904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-25DOI: 10.1109/OJNANO.2022.3224757
Chenglan Ouyang;Di Liu;Ke He;Jiahao Kang
A touch screen that combines a display and a touch sensor array is a critical component enabling human-machine interaction. The progress made in flexible touch screen technologies also vigorously drives the development and application of flexible electronics in various fields. Over the past decade, there have been enormous research and development efforts on new structures and materials for touch sensors in flexible displays, especially for flexible organic light-emitting diode (OLED) displays. Herein, this review discusses the mechanics and structures of flexible touch screens, including their benefits and drawbacks. The recent advances in the structures and electrode materials (e.g., ITO, silver nanowires, metal mesh, graphene, carbon nanotubes, and conductive polymers) are reviewed, and the challenges and prospects of these technologies are also explored.
{"title":"Recent Advances in Touch Sensors for Flexible Displays","authors":"Chenglan Ouyang;Di Liu;Ke He;Jiahao Kang","doi":"10.1109/OJNANO.2022.3224757","DOIUrl":"https://doi.org/10.1109/OJNANO.2022.3224757","url":null,"abstract":"A touch screen that combines a display and a touch sensor array is a critical component enabling human-machine interaction. The progress made in flexible touch screen technologies also vigorously drives the development and application of flexible electronics in various fields. Over the past decade, there have been enormous research and development efforts on new structures and materials for touch sensors in flexible displays, especially for flexible organic light-emitting diode (OLED) displays. Herein, this review discusses the mechanics and structures of flexible touch screens, including their benefits and drawbacks. The recent advances in the structures and electrode materials (e.g., ITO, silver nanowires, metal mesh, graphene, carbon nanotubes, and conductive polymers) are reviewed, and the challenges and prospects of these technologies are also explored.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"36-46"},"PeriodicalIF":1.7,"publicationDate":"2022-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/09964079.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3484047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-24DOI: 10.1109/OJNANO.2022.3224462
D Manaswi;Srinivasa Rao Karumuri;Girish Wadhwa
This paper presents a new design of charge plasma junctionless tunnel field effect transistor (CP JLTFET) with improved ON current, surface potentials. For the ease of fabrication, source and drain regions are induced in intrinsic silicon material using proper metal workfunctions. The rate of tunneling of electrons is found more in case of proposed CP JLTFET. The cavity length is varied between 8 nm and 10 nm and different dielectric constants have been used. This increased the ON state performance of device i.e ON drive current, potential and electric field. The increase in tunneling of electrons is mainly due to high recombination of carriers in the channel region. The proposed device simulated their electrical parameters like drain current, surface potentials, electric field, and energy bands with different dielectric constants. These excellent performance parameters of the proposed device with an appropriate material can be used for sensing application of biomolecules by introducing a cavity in the device.
{"title":"Design and Parametric Analysis of Charge Plasma Junctionless TFET for Biosensor Applications","authors":"D Manaswi;Srinivasa Rao Karumuri;Girish Wadhwa","doi":"10.1109/OJNANO.2022.3224462","DOIUrl":"https://doi.org/10.1109/OJNANO.2022.3224462","url":null,"abstract":"This paper presents a new design of charge plasma junctionless tunnel field effect transistor (CP JLTFET) with improved ON current, surface potentials. For the ease of fabrication, source and drain regions are induced in intrinsic silicon material using proper metal workfunctions. The rate of tunneling of electrons is found more in case of proposed CP JLTFET. The cavity length is varied between 8 nm and 10 nm and different dielectric constants have been used. This increased the ON state performance of device i.e ON drive current, potential and electric field. The increase in tunneling of electrons is mainly due to high recombination of carriers in the channel region. The proposed device simulated their electrical parameters like drain current, surface potentials, electric field, and energy bands with different dielectric constants. These excellent performance parameters of the proposed device with an appropriate material can be used for sensing application of biomolecules by introducing a cavity in the device.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"71-76"},"PeriodicalIF":1.7,"publicationDate":"2022-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/09963639.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3518038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-23DOI: 10.1109/OJNANO.2022.3224229
Goran Miskovic;Robin Kaufhold
Regardless of the technology, additive or subtractive, the miniaturization trend is constantly pushing for smaller resolutions. The rise of global challenges in material availability, fabrication in three dimensions (3D), design flexibility and rapid prototyping have pushed additive manufacturing (AM) into the spotlight. Addressing the miniaturization trend, AM has already successfully answered the challenges for microscale 3D fabrication. However, fabricating nano-resolution still presents a challenge. In this review, we will present some of the most reported AM-based technologies capable of nanoscale 3D fabrication addressing resolutions of ≤ 500 nm. The focus is placed on Electrohydrodynamic (EHD) printing (also known as e-jet printing), as EHD printing seems to have the best trade-off when it comes to technique complexity, achievable resolutions, material diversity and potential to scale-up throughput. An overview of the smallest achieved resolutions as well as the most unique use cases and demonstrated applications will be addressed in this work.
{"title":"Additive Manufacturing for Nano-Feature Applications: Electrohydrodynamic Printing as a Next-Generation Enabling Technology","authors":"Goran Miskovic;Robin Kaufhold","doi":"10.1109/OJNANO.2022.3224229","DOIUrl":"10.1109/OJNANO.2022.3224229","url":null,"abstract":"Regardless of the technology, additive or subtractive, the miniaturization trend is constantly pushing for smaller resolutions. The rise of global challenges in material availability, fabrication in three dimensions (3D), design flexibility and rapid prototyping have pushed additive manufacturing (AM) into the spotlight. Addressing the miniaturization trend, AM has already successfully answered the challenges for microscale 3D fabrication. However, fabricating nano-resolution still presents a challenge. In this review, we will present some of the most reported AM-based technologies capable of nanoscale 3D fabrication addressing resolutions of ≤ 500 nm. The focus is placed on Electrohydrodynamic (EHD) printing (also known as e-jet printing), as EHD printing seems to have the best trade-off when it comes to technique complexity, achievable resolutions, material diversity and potential to scale-up throughput. An overview of the smallest achieved resolutions as well as the most unique use cases and demonstrated applications will be addressed in this work.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"191-198"},"PeriodicalIF":1.7,"publicationDate":"2022-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9961888","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62889145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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