This work demonstrates the synergistic effects of 100 kGy gamma irradiation on the electrical and reliability performance of submicron GaN-on-Si RF MIS-HEMTs with in situ SiN. The results reveal a significant reduction in contact and sheet resistance attributed to annealing effects and defect restructuring, as characterized by TLM measurements. These structural changes contribute to improvements in drain current and transconductance while maintaining a stable threshold voltage, as evidenced by input and output characteristics. Furthermore, the reliability characteristics, as measured by gate-lag/drain-lag measurements, confirm a reduction in trapping sites within the gate and gate-drain access regions, leading to improved ON-resistance stability post-gamma irradiation. A decrease in off-state leakage current and improved degradation voltage further supports the reduction of native defects, as confirmed by the gate and drain step stress measurements. The study also analyzes the RF performance using S-parameters and load-pull measurements, demonstrating improvements in small and large signal RF parameters driven by increased drain current and reduced trapped carriers. Collectively, these improvements in $0.3~mu $ m gate-length GaN-on-Si RF MIS-HEMTs post-irradiation enable the design and fabrication of GaN MIS-HEMTs using the $0.25~mu $ m industry semiconductor process, making them highly suitable for radiation-prone environments and space applications.
这项工作证明了100 kGy伽马辐射对亚微米GaN-on-Si射频miss - hemt的电学和可靠性性能的协同效应。结果显示，由于退火效应和缺陷重组，接触电阻和薄片电阻显着降低，这是TLM测量的特征。这些结构变化有助于改善漏极电流和跨导，同时保持稳定的阈值电压，正如输入和输出特性所证明的那样。此外，通过栅极滞后/漏极滞后测量测量的可靠性特性证实了栅极和栅极漏极通道区域内捕获点的减少，从而改善了γ辐照后的导通电阻稳定性。通过栅极和漏极应力测量证实，失态泄漏电流的降低和退化电压的提高进一步支持了原生缺陷的减少。该研究还使用s参数和负载-拉力测量分析了射频性能，展示了在漏极电流增加和捕获载流子减少的驱动下，小信号和大信号射频参数的改善。总的来说，辐照后栅长GaN-on- si RF mis - hemt的这些改进使得使用0.25~mu $ m工业半导体工艺设计和制造GaN mis - hemt成为可能，使其非常适合辐射易发环境和空间应用。
{"title":"Effect of Gamma Radiation on Static DC, Reliability, and RF Performance of Submicron GaN-on-Si RF MIS-HEMTs With In Situ SiN","authors":"Anant Johari;Chin-Ya Su;Der-Sheng Chao;Ankur Gupta;Rajendra Singh;Tian-Li Wu","doi":"10.1109/TDMR.2025.3573183","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3573183","url":null,"abstract":"This work demonstrates the synergistic effects of 100 kGy gamma irradiation on the electrical and reliability performance of submicron GaN-on-Si RF MIS-HEMTs with in situ SiN. The results reveal a significant reduction in contact and sheet resistance attributed to annealing effects and defect restructuring, as characterized by TLM measurements. These structural changes contribute to improvements in drain current and transconductance while maintaining a stable threshold voltage, as evidenced by input and output characteristics. Furthermore, the reliability characteristics, as measured by gate-lag/drain-lag measurements, confirm a reduction in trapping sites within the gate and gate-drain access regions, leading to improved ON-resistance stability post-gamma irradiation. A decrease in off-state leakage current and improved degradation voltage further supports the reduction of native defects, as confirmed by the gate and drain step stress measurements. The study also analyzes the RF performance using S-parameters and load-pull measurements, demonstrating improvements in small and large signal RF parameters driven by increased drain current and reduced trapped carriers. Collectively, these improvements in <inline-formula> <tex-math>$0.3~mu $ </tex-math></inline-formula>m gate-length GaN-on-Si RF MIS-HEMTs post-irradiation enable the design and fabrication of GaN MIS-HEMTs using the <inline-formula> <tex-math>$0.25~mu $ </tex-math></inline-formula>m industry semiconductor process, making them highly suitable for radiation-prone environments and space applications.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 3","pages":"465-472"},"PeriodicalIF":2.3,"publicationDate":"2025-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145043859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-22DOI: 10.1109/TDMR.2025.3572512
Yushuang He;Feipeng Wang;Hongming Yang;Archie James Johnston;Xiao Zhang;Jian Li
Metallized film capacitors (MFCs) are valued for their ability to withstand high-electric-fields, yet they face short-term failure risks when subjected to overvoltage-induced self-healing (SH). This paper presents a monitoring method designed to address the challenges posed by multiple instances of SH in pulsed power applications. Traditional capacitance estimation using sampled current during SH is hindered by the significant arc current. To address this, the study explores the dynamic interplay between sampling current, arc current, and MFC current throughout the SH process. The introduction of Kalman filtering effectively mitigates the impact of noise signals on capacitance monitoring during the short-term cumulative discharge process of SH. Experimental and simulation results attest to the efficiency of the proposed approach, demonstrating an estimation error of less than 1%. Furthermore, a thorough structural analysis of MFCs demonstrates that the proposed method can effectively identify the transition from isolated, safe SH behavior to clustered, disruptive SH events, thereby enabling timely intervention to prevent severe damage.
{"title":"Monitoring Metallized Film Capacitor Health: A Method for Estimating Capacitance Amid Short-Term Failures Due to Self-Healing","authors":"Yushuang He;Feipeng Wang;Hongming Yang;Archie James Johnston;Xiao Zhang;Jian Li","doi":"10.1109/TDMR.2025.3572512","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3572512","url":null,"abstract":"Metallized film capacitors (MFCs) are valued for their ability to withstand high-electric-fields, yet they face short-term failure risks when subjected to overvoltage-induced self-healing (SH). This paper presents a monitoring method designed to address the challenges posed by multiple instances of SH in pulsed power applications. Traditional capacitance estimation using sampled current during SH is hindered by the significant arc current. To address this, the study explores the dynamic interplay between sampling current, arc current, and MFC current throughout the SH process. The introduction of Kalman filtering effectively mitigates the impact of noise signals on capacitance monitoring during the short-term cumulative discharge process of SH. Experimental and simulation results attest to the efficiency of the proposed approach, demonstrating an estimation error of less than 1%. Furthermore, a thorough structural analysis of MFCs demonstrates that the proposed method can effectively identify the transition from isolated, safe SH behavior to clustered, disruptive SH events, thereby enabling timely intervention to prevent severe damage.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 3","pages":"638-648"},"PeriodicalIF":2.3,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145027963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-22DOI: 10.1109/TDMR.2025.3572829
Saulo G. Alberton;Alexis C. Vilas-Bôas;Marcilei A. Guazzelli;Vitor A. P. Aguiar;Matheus S. Pereira;Nemitala Added;Claudio A. Federico;Tássio C. Cavalcante;Evaldo C. F. Pereira;Rafael G. Vaz;Odair L. Gonçalez;Jeffery Wyss;Alessandro Paccagnella;Nilberto H. Medina
The trench gate or U-groove MOSFET (UMOSFET) has become widely adopted as a semiconductor device globally, gradually replacing the traditional vertical double-diffused MOSFET (DMOSFET) in many applications. Evaluating the reliability of UMOSFETs regarding neutron-induced radiation effects is crucial for understanding their response to ubiquitous atmospheric neutrons. This study presents comparative experimental and computational results of Single-Event Effects induced by monoenergetic fast neutrons in UMOS and DMOS power transistors. Experiments demonstrate that UMOSFETs exhibit premature particle-induced avalanche multiplication effects compared to similarly rated DMOSFETs, which may favor destructive radiation effects, such as Single-Event Burnout, when operating in the terrestrial radiation environment.
{"title":"Single-Event Effects Induced by Monoenergetic Fast Neutrons in Silicon Power UMOSFETs","authors":"Saulo G. Alberton;Alexis C. Vilas-Bôas;Marcilei A. Guazzelli;Vitor A. P. Aguiar;Matheus S. Pereira;Nemitala Added;Claudio A. Federico;Tássio C. Cavalcante;Evaldo C. F. Pereira;Rafael G. Vaz;Odair L. Gonçalez;Jeffery Wyss;Alessandro Paccagnella;Nilberto H. Medina","doi":"10.1109/TDMR.2025.3572829","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3572829","url":null,"abstract":"The trench gate or U-groove MOSFET (UMOSFET) has become widely adopted as a semiconductor device globally, gradually replacing the traditional vertical double-diffused MOSFET (DMOSFET) in many applications. Evaluating the reliability of UMOSFETs regarding neutron-induced radiation effects is crucial for understanding their response to ubiquitous atmospheric neutrons. This study presents comparative experimental and computational results of Single-Event Effects induced by monoenergetic fast neutrons in UMOS and DMOS power transistors. Experiments demonstrate that UMOSFETs exhibit premature particle-induced avalanche multiplication effects compared to similarly rated DMOSFETs, which may favor destructive radiation effects, such as Single-Event Burnout, when operating in the terrestrial radiation environment.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 3","pages":"492-500"},"PeriodicalIF":2.3,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145050796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-22DOI: 10.1109/TDMR.2025.3572856
S. Perrin;K. Alkema;V. Della Marca;T. Kempf;O. Paulet;M. Arteaga;M. Akbal;B. Arrazat;J. Metz;J. M. Moragues;A. Regnier;M. Bocquet;J. M. Portal
This study investigates the variability in HCI (Hot Carrier Injection) degradation within a 4 kb charge storage memory array, manufactured on a dedicated wafer split process. A standard set of experiments is conducted to extract electrical features of the cells before and after stress. A statistical analysis method, based on the Principal Component Analysis (PCA) approach, is introduced to enhance the comprehension of the cell degradation prior to reliability testing. Additionally, a graphical model is developed to identify extrinsic cells in the memory array prior to stress, as well as to assess the overall technology yield. Finally, others classifier models are explored aiming to improve extrinsic cells detection before running the reliability test.
{"title":"Predictive Method of Charge Storage Memory Degradation on a Dedicated 4kb Test Vehicle","authors":"S. Perrin;K. Alkema;V. Della Marca;T. Kempf;O. Paulet;M. Arteaga;M. Akbal;B. Arrazat;J. Metz;J. M. Moragues;A. Regnier;M. Bocquet;J. M. Portal","doi":"10.1109/TDMR.2025.3572856","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3572856","url":null,"abstract":"This study investigates the variability in HCI (Hot Carrier Injection) degradation within a 4 kb charge storage memory array, manufactured on a dedicated wafer split process. A standard set of experiments is conducted to extract electrical features of the cells before and after stress. A statistical analysis method, based on the Principal Component Analysis (PCA) approach, is introduced to enhance the comprehension of the cell degradation prior to reliability testing. Additionally, a graphical model is developed to identify extrinsic cells in the memory array prior to stress, as well as to assess the overall technology yield. Finally, others classifier models are explored aiming to improve extrinsic cells detection before running the reliability test.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 3","pages":"371-378"},"PeriodicalIF":2.3,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145051003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-21DOI: 10.1109/TDMR.2025.3572299
Wangyong Chen;Ling Xiong;Mingyue Zheng;Songxuan He;Linlin Cai
As CMOS technology scales down into the nanometer regime, the NBTI effect becomes a major issue for circuit reliability. This paper proposes an NBTI-aware design method with dual-Vth logic synthesis strategy for reliability improvement. NBTI awareness is innovatively incorporated into EDA toolchains based on NBTI-aware standard cell library and Open Model Interface (OMI), which considers aging difference among transistors instead of constant worst-case degradation. Furthermore, the circuit timing for post-aging delay is optimized by realizing the dual-Vth synthesis. The results show that in the original design without the optimal design strategy, the NBTI effect leads to obvious timing degradation. In contrast, when using the proposed OMI assisted design approach, timing degradation caused by NBTI can be suppressed effectively, allowing the circuit to continue operating normally even after aging.
{"title":"Open Model Interface Assisted NBTI-Aware Design With Dual-Vth Logic Synthesis Strategy for Reliability Improvement","authors":"Wangyong Chen;Ling Xiong;Mingyue Zheng;Songxuan He;Linlin Cai","doi":"10.1109/TDMR.2025.3572299","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3572299","url":null,"abstract":"As CMOS technology scales down into the nanometer regime, the NBTI effect becomes a major issue for circuit reliability. This paper proposes an NBTI-aware design method with dual-Vth logic synthesis strategy for reliability improvement. NBTI awareness is innovatively incorporated into EDA toolchains based on NBTI-aware standard cell library and Open Model Interface (OMI), which considers aging difference among transistors instead of constant worst-case degradation. Furthermore, the circuit timing for post-aging delay is optimized by realizing the dual-Vth synthesis. The results show that in the original design without the optimal design strategy, the NBTI effect leads to obvious timing degradation. In contrast, when using the proposed OMI assisted design approach, timing degradation caused by NBTI can be suppressed effectively, allowing the circuit to continue operating normally even after aging.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 3","pages":"528-534"},"PeriodicalIF":2.3,"publicationDate":"2025-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145051004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-19DOI: 10.1109/TDMR.2025.3571531
Jihoon Kim;Hyoungrok Lee;Yeonseop Yu;Jungwoo Pyun
The reliability of solder joints in Cu pillar microbumps is critical for advanced packaging technologies such as 2.5D and 3D integration. As thermocompression (TC) bonding with non-conductive film (NCF) becomes widely adopted, solder dewetting caused by NCF entrapment has emerged as one of major reliability concerns. In this study, we fabricated test vehicles with controlled NCF thickness and viscosity to intentionally induce solder dewetting. These test vehicles underwent multiple reflow cycles or high-temperature storage (HTS) to examine the evolution of dewetting behavior and assess the impact of thermal budget on solder wettability. Through microstructural analysis and dewetting rate measurements, we found that intermetallic compound (IMC) growth played a key role in recurrent dewetting during successive reflows. A modeling approach was proposed to describe how the dewetting rate decreases with increasing reflow cycles due to IMC growth and the size distribution of NCF entrapment. These findings provide insight into failure mechanisms related to solder dewetting and a tool for predicting the reliability of microbump interconnects after multiple reflow cycles during advanced packaging.
{"title":"Solder Dewetting and Reliability Challenges in Microbumps Due to NCF Entrapment","authors":"Jihoon Kim;Hyoungrok Lee;Yeonseop Yu;Jungwoo Pyun","doi":"10.1109/TDMR.2025.3571531","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3571531","url":null,"abstract":"The reliability of solder joints in Cu pillar microbumps is critical for advanced packaging technologies such as 2.5D and 3D integration. As thermocompression (TC) bonding with non-conductive film (NCF) becomes widely adopted, solder dewetting caused by NCF entrapment has emerged as one of major reliability concerns. In this study, we fabricated test vehicles with controlled NCF thickness and viscosity to intentionally induce solder dewetting. These test vehicles underwent multiple reflow cycles or high-temperature storage (HTS) to examine the evolution of dewetting behavior and assess the impact of thermal budget on solder wettability. Through microstructural analysis and dewetting rate measurements, we found that intermetallic compound (IMC) growth played a key role in recurrent dewetting during successive reflows. A modeling approach was proposed to describe how the dewetting rate decreases with increasing reflow cycles due to IMC growth and the size distribution of NCF entrapment. These findings provide insight into failure mechanisms related to solder dewetting and a tool for predicting the reliability of microbump interconnects after multiple reflow cycles during advanced packaging.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 3","pages":"649-653"},"PeriodicalIF":2.3,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145027998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-19DOI: 10.1109/TDMR.2025.3535976
{"title":"Call for Nominations for Editor-in-Chief IEEE Transactions on Semiconductor Manufacturing","authors":"","doi":"10.1109/TDMR.2025.3535976","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3535976","url":null,"abstract":"","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 1","pages":"173-173"},"PeriodicalIF":2.5,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10934108","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143667382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-19DOI: 10.1109/TDMR.2025.3551113
{"title":"Announcing an IEEE/Optica Publishing Group Journal of Lightwave Technology Special Issue on: OFS-29","authors":"","doi":"10.1109/TDMR.2025.3551113","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3551113","url":null,"abstract":"","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 1","pages":"174-174"},"PeriodicalIF":2.5,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10934087","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143667230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-19DOI: 10.1109/TDMR.2025.3549643
{"title":"IEEE Transactions on Device and Materials Reliability Information for Authors","authors":"","doi":"10.1109/TDMR.2025.3549643","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3549643","url":null,"abstract":"","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 1","pages":"C3-C3"},"PeriodicalIF":2.5,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10934111","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143654915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-19DOI: 10.1109/TDMR.2025.3544351
Luca Cassano;Mihalis Psarakis
The ten articles in this special issue present innovative research in the field of defect and fault tolerance in VLSI and nanotechnology systems and provide readers with valuable insights into the latest advances and future trends in these challenging research areas. The focus of these articles is on the reliability in the design, technology and testing of electronic devices and systems, integrated circuits, printed modules, as well as methodologies and tools used for reliability and security prediction, verification and design validation.
{"title":"Special Issue on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFTS 2023) in the IEEE Transactions on Device and Materials Reliability","authors":"Luca Cassano;Mihalis Psarakis","doi":"10.1109/TDMR.2025.3544351","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3544351","url":null,"abstract":"The ten articles in this special issue present innovative research in the field of defect and fault tolerance in VLSI and nanotechnology systems and provide readers with valuable insights into the latest advances and future trends in these challenging research areas. The focus of these articles is on the reliability in the design, technology and testing of electronic devices and systems, integrated circuits, printed modules, as well as methodologies and tools used for reliability and security prediction, verification and design validation.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 1","pages":"2-3"},"PeriodicalIF":2.5,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10934089","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143667459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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