Pub Date : 2024-03-21DOI: 10.1109/TNANO.2024.3380361
G. S. Sahoo;M. Verma;S. Routray;G. P. Mishra
Research on Cu 2 ZnSnS x Se 4–x (CZTSSe) Kesterite solar cells has reached a critical point, despite a significant improvement in understanding of the limitations associated with these materials. However, the conversion efficiency of CZTSSe solar cells has yet to exceed 20%, primarily due to a relatively high voltage deficit compared to other well-established chalcogenide technologies. The primary limitation for open-circuit voltage (V oc ) in CZTSSe solar cells is associated with the defect structure, including intrinsic defects and defect clusters within the bulk absorber film. Specifically, the unfavorable band structure and poor defect environment contribute to increased carrier recombination at the front interface, which is a major challenge. To mitigate the issues related to interface recombination and reduce the V oc deficit, a promising and practical approach known as quantum superlattices (QSs) has been proposed. It demonstrates CZTSSe QSs in the CZTS absorber layer. In ideal case it provides an efficiency of 37.8% with a V oc of 1.06V, which is far better as compared to previously existing chalcogeneide technologies. Also in this study a deep inside into the different types of defect engineering is provided in detail with the help of numerical simulation tool.
{"title":"Unveiling the Effect of CZTSSe Quantum Superlattice on the Interfacial and Optical Properties of CZTS Kesterite Solar Cell","authors":"G. S. Sahoo;M. Verma;S. Routray;G. P. Mishra","doi":"10.1109/TNANO.2024.3380361","DOIUrl":"10.1109/TNANO.2024.3380361","url":null,"abstract":"Research on Cu\u0000<sub>2</sub>\u0000ZnSnS\u0000<sub>x</sub>\u0000Se\u0000<sub>4–x</sub>\u0000 (CZTSSe) Kesterite solar cells has reached a critical point, despite a significant improvement in understanding of the limitations associated with these materials. However, the conversion efficiency of CZTSSe solar cells has yet to exceed 20%, primarily due to a relatively high voltage deficit compared to other well-established chalcogenide technologies. The primary limitation for open-circuit voltage (V\u0000<sub>oc</sub>\u0000) in CZTSSe solar cells is associated with the defect structure, including intrinsic defects and defect clusters within the bulk absorber film. Specifically, the unfavorable band structure and poor defect environment contribute to increased carrier recombination at the front interface, which is a major challenge. To mitigate the issues related to interface recombination and reduce the V\u0000<sub>oc</sub>\u0000 deficit, a promising and practical approach known as quantum superlattices (QSs) has been proposed. It demonstrates CZTSSe QSs in the CZTS absorber layer. In ideal case it provides an efficiency of 37.8% with a V\u0000<sub>oc</sub>\u0000 of 1.06V, which is far better as compared to previously existing chalcogeneide technologies. Also in this study a deep inside into the different types of defect engineering is provided in detail with the help of numerical simulation tool.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"286-292"},"PeriodicalIF":2.4,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140203559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-18DOI: 10.1109/TNANO.2024.3375848
Bo Lu;Yong-Pan Gao;Lu Liu;Chuan Wang
In this work, the optical properties and dynamical behaviors of the optical parametric oscillation under the anti Parity-Time (anti-PT) symmetry are studied. The non-Hermitian optical system is composed of two whispering-gallery mode micorcavities with one cavity supports the $chi _{2}$ nonliearity. Compared with the previous non-Hermitian system that relies on optical gain and loss, the proposed system could achieve the ultra-fast control of anti-PT symmetry by adjusting the parameter gain and coupling strength. Moreover, by focusing on the anti-PT symmetrical system and asymmetrical gain under linear pumping conditions, we find that the system provides the asymmetric transmission under the anti-PT symmetry, meanwhile the non-reciprocal transmission would be achieved by breaking the anti-PT symmetry. We believe these results may be further applied to optical diodes, optical switches and other optical devices which may pave the way of nanophotonics and quantum information science.
{"title":"Anti-Parity-Time Symmetry and Non-Reciprocal Transmission in Photonic Dimer","authors":"Bo Lu;Yong-Pan Gao;Lu Liu;Chuan Wang","doi":"10.1109/TNANO.2024.3375848","DOIUrl":"10.1109/TNANO.2024.3375848","url":null,"abstract":"In this work, the optical properties and dynamical behaviors of the optical parametric oscillation under the anti Parity-Time (anti-PT) symmetry are studied. The non-Hermitian optical system is composed of two whispering-gallery mode micorcavities with one cavity supports the \u0000<inline-formula><tex-math>$chi _{2}$</tex-math></inline-formula>\u0000 nonliearity. Compared with the previous non-Hermitian system that relies on optical gain and loss, the proposed system could achieve the ultra-fast control of anti-PT symmetry by adjusting the parameter gain and coupling strength. Moreover, by focusing on the anti-PT symmetrical system and asymmetrical gain under linear pumping conditions, we find that the system provides the asymmetric transmission under the anti-PT symmetry, meanwhile the non-reciprocal transmission would be achieved by breaking the anti-PT symmetry. We believe these results may be further applied to optical diodes, optical switches and other optical devices which may pave the way of nanophotonics and quantum information science.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"311-316"},"PeriodicalIF":2.4,"publicationDate":"2024-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140167168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-11DOI: 10.1109/TNANO.2024.3375364
Rhea Patel;Naresh Mandal;Bidhan Pramanick
The most effective methods for detecting bacterial cells at different phases of development take a lot of time, require expert labor, and call for state-of-the-art lab setups, including complex equipment and surroundings. Here, using amperometry and non-faradaic electrochemical impedance spectroscopy (nf-EIS) measurements, we have developed a glassy carbon electrode (GCE) derived from carbon-microelectromechanical systems (C-MEMS) that has been bio-modified to detect the impact of biologically synthesized silver nanoparticles on bacterial cells. The measurement method is more straightforward and accurate because no labeling molecules or redox markers are used. Using a standard bioassay method, the antibacterial properties of the synthesized nanoparticles were established. Amperometry and impedance readings were then used to determine when the concentration of the cells had decreased. The electroanalytical analysis was performed using the chronoamperometry method under optimal conditions. Rapid antibacterial testing at the point-of-need, a significant problem in water quality management, is made possible thanks to these findings.
{"title":"Biosynthesized AgNP Modified Glassy Carbon Electrode as a Bacteria Sensor Based on Amperometry and Impedance-Based Detection","authors":"Rhea Patel;Naresh Mandal;Bidhan Pramanick","doi":"10.1109/TNANO.2024.3375364","DOIUrl":"10.1109/TNANO.2024.3375364","url":null,"abstract":"The most effective methods for detecting bacterial cells at different phases of development take a lot of time, require expert labor, and call for state-of-the-art lab setups, including complex equipment and surroundings. Here, using amperometry and non-faradaic electrochemical impedance spectroscopy (nf-EIS) measurements, we have developed a glassy carbon electrode (GCE) derived from carbon-microelectromechanical systems (C-MEMS) that has been bio-modified to detect the impact of biologically synthesized silver nanoparticles on bacterial cells. The measurement method is more straightforward and accurate because no labeling molecules or redox markers are used. Using a standard bioassay method, the antibacterial properties of the synthesized nanoparticles were established. Amperometry and impedance readings were then used to determine when the concentration of the cells had decreased. The electroanalytical analysis was performed using the chronoamperometry method under optimal conditions. Rapid antibacterial testing at the point-of-need, a significant problem in water quality management, is made possible thanks to these findings.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"257-264"},"PeriodicalIF":2.4,"publicationDate":"2024-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140105445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-08DOI: 10.1109/TNANO.2024.3375125
Aswani Radhakrishnan;Anitha Gopi;Chithra Reghuvaran;Alex James
The errors in the memristive crossbar arrays due to device variations will impact the overall accuracy of neural networks or in-memory systems developed. For ensuring reliable use of memristive crossbar arrays, variability compensation techniques are essential to be part of the neural network design. In this paper, we present an input regulated variability compensation technique for memristive crossbar arrays. In the proposed method, the input image is split into non-overlapping blocks to be processed individually by small sized neural network blocks, which is referred to as imageSplit architecture. The memristive crossbar based Artificial Neural Network (ANN) blocks are used for building the proposed imageSplit. Circuit level analysis and integration is carried out to validate the proposed architecture. We test this approach on different datasets using various deep neural network architectures. The paper considers various device variations including $R_{OFF}/R_{ON}$ variations and aging using imageSplit. Along with hardware compensation techniques, algorithmic modifications like pruning and dropouts are also considered for analysis. The results show that splitting the input and independently training the smaller neural networks performs better in terms of output probabilistic values even with the presence of the significant amount of hardware variability.
{"title":"Variability-Aware Memristive Crossbars With ImageSplit Neural Architecture","authors":"Aswani Radhakrishnan;Anitha Gopi;Chithra Reghuvaran;Alex James","doi":"10.1109/TNANO.2024.3375125","DOIUrl":"10.1109/TNANO.2024.3375125","url":null,"abstract":"The errors in the memristive crossbar arrays due to device variations will impact the overall accuracy of neural networks or in-memory systems developed. For ensuring reliable use of memristive crossbar arrays, variability compensation techniques are essential to be part of the neural network design. In this paper, we present an input regulated variability compensation technique for memristive crossbar arrays. In the proposed method, the input image is split into non-overlapping blocks to be processed individually by small sized neural network blocks, which is referred to as imageSplit architecture. The memristive crossbar based Artificial Neural Network (ANN) blocks are used for building the proposed imageSplit. Circuit level analysis and integration is carried out to validate the proposed architecture. We test this approach on different datasets using various deep neural network architectures. The paper considers various device variations including \u0000<inline-formula><tex-math>$R_{OFF}/R_{ON}$</tex-math></inline-formula>\u0000 variations and aging using imageSplit. Along with hardware compensation techniques, algorithmic modifications like pruning and dropouts are also considered for analysis. The results show that splitting the input and independently training the smaller neural networks performs better in terms of output probabilistic values even with the presence of the significant amount of hardware variability.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"274-280"},"PeriodicalIF":2.4,"publicationDate":"2024-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10463155","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140070099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-08DOI: 10.1109/TNANO.2024.3398560
Hadi Rasmi;Mohammad Mosleh;Nima Jafari Navimipour;Mohammad Kheyrandish
Today, Complementary Metal-Oxide-Semiconductor (CMOS) technology faces critical challenges, such as power consumption and current leakage at the nanoscale. Therefore, Atomic Silicon Dangling Bond (ASDB) technology has been proposed as one of the best candidates to replace CMOS technology; due to its high-speed switching and low power consumption. Among the most important issues in ASDB nanotechnology, output stability and robustness against possible faults may be focused. This paper first introduces a novel P-shaped pattern in ASDB, for designing stable and robust primitive logic gates, including AND, NAND, OR, NOR and XOR. Then, two combinational circuits, half-subtractor and full-subtractor, are proposed by the proposed ASDB gates. The simulation results show high output stability as well as adequate robustness, against various defects obtained by the proposed designs; on average, they have improvements of more than 56% and 62%, against DB omission defects and extra cell deposition defects; respectively. Also, the results of the investigations show that the proposed circuits have been improved by 65%, 21% and 2%, in terms of occupied area, energy and occurrence, respectively; compared to the previous works.
{"title":"Towards Atomic Scale Quantum Dots in Silicon: An Ultra-Efficient and Robust Subtractor Using Proposed P-Shaped Pattern","authors":"Hadi Rasmi;Mohammad Mosleh;Nima Jafari Navimipour;Mohammad Kheyrandish","doi":"10.1109/TNANO.2024.3398560","DOIUrl":"10.1109/TNANO.2024.3398560","url":null,"abstract":"Today, Complementary Metal-Oxide-Semiconductor (CMOS) technology faces critical challenges, such as power consumption and current leakage at the nanoscale. Therefore, Atomic Silicon Dangling Bond (ASDB) technology has been proposed as one of the best candidates to replace CMOS technology; due to its high-speed switching and low power consumption. Among the most important issues in ASDB nanotechnology, output stability and robustness against possible faults may be focused. This paper first introduces a novel P-shaped pattern in ASDB, for designing stable and robust primitive logic gates, including AND, NAND, OR, NOR and XOR. Then, two combinational circuits, half-subtractor and full-subtractor, are proposed by the proposed ASDB gates. The simulation results show high output stability as well as adequate robustness, against various defects obtained by the proposed designs; on average, they have improvements of more than 56% and 62%, against DB omission defects and extra cell deposition defects; respectively. Also, the results of the investigations show that the proposed circuits have been improved by 65%, 21% and 2%, in terms of occupied area, energy and occurrence, respectively; compared to the previous works.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"482-489"},"PeriodicalIF":2.1,"publicationDate":"2024-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140929837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-05DOI: 10.1109/TNANO.2024.3373499
Shanshan Liu;Josep L. Rosselló;Siting Liu;Xiaochen Tang;Joan Font-Rosselló;Christian F. Frasser;Weikang Qian;Jie Han;Pedro Reviriego;Fabrizio Lombardi
Stochastic Computing (SC) has the potential to dramatically improve important nanoscale circuit metrics, including area and power dissipation, for implementing complex digital computing systems, such as large neural networks, filters, or decoders, among others. This paper reviews the state-of-the-art design of important SC building blocks covering both arithmetic circuits, including multipliers, adders, and dividers, and finite state machines (FSMs) that are needed for numerical integration, accumulation, and activation functions in neural networks. For arithmetic circuits, we review newly proposed schemes, such as Delta Sigma Modulator-based dividers providing accurate and low latency computation, as well as design considerations by which the degree of correlation/decorrelation can be efficiently handled at the arithmetic circuit level. As for complex sequential circuits, we review classical stochastic FSM schemes as well as new designs using the recently-proposed dynamic SC to reduce the length of a stochastic sequence to obtain computation results. These stochastic circuits are compared to traditional implementations in terms of efficiency and delay for various levels of accuracy to illustrate the ranges of values for which SC provides significant performance benefits.
{"title":"From Multipliers to Integrators: A Survey of Stochastic Computing Primitives","authors":"Shanshan Liu;Josep L. Rosselló;Siting Liu;Xiaochen Tang;Joan Font-Rosselló;Christian F. Frasser;Weikang Qian;Jie Han;Pedro Reviriego;Fabrizio Lombardi","doi":"10.1109/TNANO.2024.3373499","DOIUrl":"10.1109/TNANO.2024.3373499","url":null,"abstract":"Stochastic Computing (SC) has the potential to dramatically improve important nanoscale circuit metrics, including area and power dissipation, for implementing complex digital computing systems, such as large neural networks, filters, or decoders, among others. This paper reviews the state-of-the-art design of important SC building blocks covering both arithmetic circuits, including multipliers, adders, and dividers, and finite state machines (FSMs) that are needed for numerical integration, accumulation, and activation functions in neural networks. For arithmetic circuits, we review newly proposed schemes, such as Delta Sigma Modulator-based dividers providing accurate and low latency computation, as well as design considerations by which the degree of correlation/decorrelation can be efficiently handled at the arithmetic circuit level. As for complex sequential circuits, we review classical stochastic FSM schemes as well as new designs using the recently-proposed dynamic SC to reduce the length of a stochastic sequence to obtain computation results. These stochastic circuits are compared to traditional implementations in terms of efficiency and delay for various levels of accuracy to illustrate the ranges of values for which SC provides significant performance benefits.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"238-249"},"PeriodicalIF":2.4,"publicationDate":"2024-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140047557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This research paper introduces a novel magnetic sensing device named MAGNC-FinFET, which utilizes the conventional NC-FinFET structure as its foundation. This device is capable of measuring vertical magnetic fields through the incorporation of two contacts positioned on either side of the drain. The operating principle relies on the current mode of the Hall effect, leading to the diversion of drain currents at both contact points. By introducing a magnetic field oriented in the positive y-direction and maintaining a bias of 300 μA in the drain current, magnetic measurements are obtained. Furthermore, the influence of the fin width on the device's characteristics and sensitivity has been thoroughly examined. The investigation reveals a proportional increase in both differential currents and relative sensitivity as the fin width parameter is augmented. The paper also presents an extensive review of relevant prior research, highlighting the remarkable qualities of the MAGNC-FinFET as an exceptional magnetic sensor with significantly enhanced sensitivity. This magnetic sensing device based on NC-FinFET shows significant promise as a leading contender for the forthcoming generation of integrated circuits designed for magnetic sensitivity.
{"title":"Enhanced Magnetic Field Sensing With MAGNC-FinFET: A Current Mode Hall Effect Approach","authors":"Ravindra Kumar Maurya;Radhe Gobinda Debnath;Rajesh Saha;Brinda Bhowmick","doi":"10.1109/TNANO.2024.3373035","DOIUrl":"10.1109/TNANO.2024.3373035","url":null,"abstract":"This research paper introduces a novel magnetic sensing device named MAGNC-FinFET, which utilizes the conventional NC-FinFET structure as its foundation. This device is capable of measuring vertical magnetic fields through the incorporation of two contacts positioned on either side of the drain. The operating principle relies on the current mode of the Hall effect, leading to the diversion of drain currents at both contact points. By introducing a magnetic field oriented in the positive y-direction and maintaining a bias of 300 μA in the drain current, magnetic measurements are obtained. Furthermore, the influence of the fin width on the device's characteristics and sensitivity has been thoroughly examined. The investigation reveals a proportional increase in both differential currents and relative sensitivity as the fin width parameter is augmented. The paper also presents an extensive review of relevant prior research, highlighting the remarkable qualities of the MAGNC-FinFET as an exceptional magnetic sensor with significantly enhanced sensitivity. This magnetic sensing device based on NC-FinFET shows significant promise as a leading contender for the forthcoming generation of integrated circuits designed for magnetic sensitivity.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"250-256"},"PeriodicalIF":2.4,"publicationDate":"2024-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140047558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-05DOI: 10.1109/TNANO.2024.3373013
Pradeep Doss M;R. K. Jeyachitra
Annular photonic crystal-based coupled nano ring resonator for the multifunctional platform with ultra-compact in size for high-performance optical network components. The proposed structure is reconfigurable and symmetrical, providing large bandwidth, high extinction ratio, and a very low loss comprising dual ring resonators and annular photonic crystal ring is made of Silica (Si) filled with Magnesium Fluoride (MgF 2 ) dielectric material. The photonic crystal resonator structure comprehends several high-performance optical network applications like optical filters, 1 × 2 and 1 × 3 power splitters, and reconfigurable switches. The miniature optical device parameters and their performances are optimized and analyzed by using Finite Difference Time Domain (FDTD) method. Annular photonic crystal-based ring resonators are coupled with the planar waveguide structure with a small footprint of 136.5 μm 2 with a high data rate of 7.81 Tbps. The proposed design is suitable for quantum computing, optical interconnects, and optical network devices.
{"title":"Numerical Analysis of Annular Photonic Crystal Based Reconfigurable and Multifunctional Nanoring Symmetrical Resonator for Optical Networks","authors":"Pradeep Doss M;R. K. Jeyachitra","doi":"10.1109/TNANO.2024.3373013","DOIUrl":"10.1109/TNANO.2024.3373013","url":null,"abstract":"Annular photonic crystal-based coupled nano ring resonator for the multifunctional platform with ultra-compact in size for high-performance optical network components. The proposed structure is reconfigurable and symmetrical, providing large bandwidth, high extinction ratio, and a very low loss comprising dual ring resonators and annular photonic crystal ring is made of Silica (Si) filled with Magnesium Fluoride (MgF\u0000<sub>2</sub>\u0000) dielectric material. The photonic crystal resonator structure comprehends several high-performance optical network applications like optical filters, 1 × 2 and 1 × 3 power splitters, and reconfigurable switches. The miniature optical device parameters and their performances are optimized and analyzed by using Finite Difference Time Domain (FDTD) method. Annular photonic crystal-based ring resonators are coupled with the planar waveguide structure with a small footprint of 136.5 μm\u0000<sup>2</sup>\u0000 with a high data rate of 7.81 Tbps. The proposed design is suitable for quantum computing, optical interconnects, and optical network devices.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"223-230"},"PeriodicalIF":2.4,"publicationDate":"2024-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140047560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-05DOI: 10.1109/TNANO.2024.3372946
Samuel S. H. Ng;Jeremiah Croshaw;Marcel Walter;Robert Wille;Robert Wolkow;Konrad Walus
Recent research interest in emerging logic systems based on quantum dots has been sparked by the experimental demonstration of nanometer-scale logic devices composed of atomically sized quantum dots made of silicon dangling bonds (SiDBs), along with the availability of SiQAD, a computer-aided design tool designed for this technology. Latest design automation frameworks have enabled the synthesis of SiDB circuits that reach the size of $mathbf {32times 10^{3}}, {mathbf{nm}}^mathbf {2}$ —orders of magnitude more complex than their hand-designed counterparts. However, current SiDB simulation engines do not take defects into account, which is important to consider for these sizable systems. This work proposes a formulation for incorporating fixed-charge simulation into established ground state models to cover an important class of defects that has a non-negligible effect on nearby SiDBs at the $mathbf {10}, {mathbf{nm}}$ scale and beyond. The formulation is validated by implementing it into SiQAD's simulation engine and computationally reproducing experiments on multiple defect types, revealing a high level of accuracy. The new capability is applied towards studying the tolerance of several established logic gates against the introduction of a single nearby defect to establish the corresponding minimum required clearance. These findings are compared against existing metrics to form a foundation for logic robustness studies.
{"title":"Simulating Charged Defects in Silicon Dangling Bond Logic Systems to Evaluate Logic Robustness","authors":"Samuel S. H. Ng;Jeremiah Croshaw;Marcel Walter;Robert Wille;Robert Wolkow;Konrad Walus","doi":"10.1109/TNANO.2024.3372946","DOIUrl":"10.1109/TNANO.2024.3372946","url":null,"abstract":"Recent research interest in emerging logic systems based on quantum dots has been sparked by the experimental demonstration of nanometer-scale logic devices composed of atomically sized quantum dots made of silicon dangling bonds (SiDBs), along with the availability of SiQAD, a computer-aided design tool designed for this technology. Latest design automation frameworks have enabled the synthesis of SiDB circuits that reach the size of \u0000<inline-formula><tex-math>$mathbf {32times 10^{3}}, {mathbf{nm}}^mathbf {2}$</tex-math></inline-formula>\u0000—orders of magnitude more complex than their hand-designed counterparts. However, current SiDB simulation engines do not take defects into account, which is important to consider for these sizable systems. This work proposes a formulation for incorporating fixed-charge simulation into established ground state models to cover an important class of defects that has a non-negligible effect on nearby SiDBs at the \u0000<inline-formula><tex-math>$mathbf {10}, {mathbf{nm}}$</tex-math></inline-formula>\u0000 scale and beyond. The formulation is validated by implementing it into SiQAD's simulation engine and computationally reproducing experiments on multiple defect types, revealing a high level of accuracy. The new capability is applied towards studying the tolerance of several established logic gates against the introduction of a single nearby defect to establish the corresponding minimum required clearance. These findings are compared against existing metrics to form a foundation for logic robustness studies.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"231-237"},"PeriodicalIF":2.4,"publicationDate":"2024-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140047561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-03DOI: 10.1109/TNANO.2024.3396505
Sameh O. Abdellatif;Hana Mosalam;Salma A. Hussien
As the interest in human health and customized medicine has grown recently, many researchers' investigations have concentrated on biosensors to develop a cost-effective device for sensing different medical parameters. Among the wide range of organic electronic devices, organic field effect transistor (OFET) has been used in manufacturing flexible biosensors due to their light weight, flexibility, and lower energy usage. In this study, a carrier transport electronic model, verified with experimental data, simulates the biosensing process in two different biosensors: lactate and troponin. Initially, a random forest machine learning model was used to optimize the OFET device with a new figure of merit. Consequently, the sensor's sensitivity and limit of detection were calculated. Two active layers were investigated: polyaniline and pentacene, where the polyaniline showed better sensitivity for lactate biosensor 220 (nM) -1 and troponin 484 (g/ml) -1 . Moreover, the polyaniline recorded nearly ten times lower power consumption because of its extremely low threshold voltage of -170 mV.
{"title":"Experimentally Verified Effective Doping Model for Lactate and Troponin OFET Biosensors Using Machine Learning Algorithm","authors":"Sameh O. Abdellatif;Hana Mosalam;Salma A. Hussien","doi":"10.1109/TNANO.2024.3396505","DOIUrl":"10.1109/TNANO.2024.3396505","url":null,"abstract":"As the interest in human health and customized medicine has grown recently, many researchers' investigations have concentrated on biosensors to develop a cost-effective device for sensing different medical parameters. Among the wide range of organic electronic devices, organic field effect transistor (OFET) has been used in manufacturing flexible biosensors due to their light weight, flexibility, and lower energy usage. In this study, a carrier transport electronic model, verified with experimental data, simulates the biosensing process in two different biosensors: lactate and troponin. Initially, a random forest machine learning model was used to optimize the OFET device with a new figure of merit. Consequently, the sensor's sensitivity and limit of detection were calculated. Two active layers were investigated: polyaniline and pentacene, where the polyaniline showed better sensitivity for lactate biosensor 220 (nM)\u0000<sup>-1</sup>\u0000 and troponin 484 (g/ml)\u0000<sup>-1</sup>\u0000. Moreover, the polyaniline recorded nearly ten times lower power consumption because of its extremely low threshold voltage of -170 mV.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"415-421"},"PeriodicalIF":2.4,"publicationDate":"2024-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140834681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：