Pub Date : 2024-07-02DOI: 10.1109/TNANO.2024.3421334
Kamal Solanki;Swati Verma;Pankaj Kumar Das;P.P. Paltani;Manoj Kumar Majumder
Elevated levels of nitrogen dioxide (NO2) pollutants have captured significant attention due to their profound influence on the cardiovascular and respiratory systems; hence, high-performance monitoring systems for pollutants are imperative to safeguard the well-being of individuals. In this regard, a hydrogen-passivated two-probe Armchair Graphene Nanoribbon (ArGNR) gas sensor utilizing a doped/undoped configuration can be considered to mitigate the NO2 pollutants. Therefore, this research, for the first time, examines the influence of channel length and transport properties on the i-v behavior of NO2 pollutants for doped/undoped ArGNR-based sensors. The electronic properties are rigorously examined using the density function theory (DFT) within the linear combination of atomic orbital (LCAO) and semi-empirical computation techniques, leveraging principles derived from non-equilibrium Green's function. In comparison to the undoped ArGNR, the BAs doped ArGNR exhibits superior chemisorption energy of −2.3 eV (with spin effect) and −3.3 eV (without spin effect), coupled with the substantial bandgap variation of −10.22, 36.50% (with spin effect) and 100% (without spin effect), at the B and As sites, respectively. In addition, a high quantum transport spectrum of 57% and significant current variations of 95% and 77% at the B and As sites, respectively, upon the NO2 adsorption. These findings suggest that the B-As-doped ArGNR sensor provides a promising solution for susceptible NO2 detection.
由于二氧化氮（NO2）污染物对心血管和呼吸系统的深远影响，其浓度水平的升高已引起人们的极大关注；因此，高性能的污染物监测系统对保障个人健康至关重要。在这方面，可以考虑利用掺杂/未掺杂配置的氢钝化双探针臂章石墨烯纳米带（ArGNR）气体传感器来缓解二氧化氮污染物。因此，本研究首次考察了基于掺杂/未掺杂 ArGNR 的传感器的沟道长度和传输特性对 NO2 污染物的 iv 行为的影响。利用原子轨道线性组合（LCAO）和半经验计算技术中的密度函数理论（DFT），以及从非平衡格林函数中得出的原理，对电子特性进行了严格研究。与未掺杂的 ArGNR 相比，掺杂 BAs 的 ArGNR 表现出更高的化学吸附能，分别为 -2.3 eV（有自旋效应）和 -3.3 eV（无自旋效应），同时在 B 和 As 位点的带隙变化也很大，分别为 -10.22、36.50%（有自旋效应）和 100%（无自旋效应）。此外，在吸附二氧化氮时，B 和 As 位点的量子传输谱高达 57%，电流变化显著，分别为 95% 和 77%。这些发现表明，掺杂 B-As 的 ArGNR 传感器为易受影响的二氧化氮检测提供了一种前景广阔的解决方案。
{"title":"Ab Initio Modeling of Doped/Undoped ArGNR Sensors for No2 Detection","authors":"Kamal Solanki;Swati Verma;Pankaj Kumar Das;P.P. Paltani;Manoj Kumar Majumder","doi":"10.1109/TNANO.2024.3421334","DOIUrl":"10.1109/TNANO.2024.3421334","url":null,"abstract":"Elevated levels of nitrogen dioxide (NO\u0000<sub>2</sub>\u0000) pollutants have captured significant attention due to their profound influence on the cardiovascular and respiratory systems; hence, high-performance monitoring systems for pollutants are imperative to safeguard the well-being of individuals. In this regard, a hydrogen-passivated two-probe Armchair Graphene Nanoribbon (ArGNR) gas sensor utilizing a doped/undoped configuration can be considered to mitigate the NO\u0000<sub>2</sub>\u0000 pollutants. Therefore, this research, for the first time, examines the influence of channel length and transport properties on the \u0000<italic>i-v</i>\u0000 behavior of NO\u0000<sub>2</sub>\u0000 pollutants for doped/undoped ArGNR-based sensors. The electronic properties are rigorously examined using the density function theory (DFT) within the linear combination of atomic orbital (LCAO) and semi-empirical computation techniques, leveraging principles derived from non-equilibrium Green's function. In comparison to the undoped ArGNR, the BAs doped ArGNR exhibits superior chemisorption energy of −2.3 eV (with spin effect) and −3.3 eV (without spin effect), coupled with the substantial bandgap variation of −10.22, 36.50% (with spin effect) and 100% (without spin effect), at the \u0000<italic>B</i>\u0000 and \u0000<italic>As</i>\u0000 sites, respectively. In addition, a high quantum transport spectrum of 57% and significant current variations of 95% and 77% at the \u0000<italic>B</i>\u0000 and \u0000<italic>As</i>\u0000 sites, respectively, upon the NO\u0000<sub>2</sub>\u0000 adsorption. These findings suggest that the B-As-doped ArGNR sensor provides a promising solution for susceptible NO\u0000<sub>2</sub>\u0000 detection.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"567-577"},"PeriodicalIF":2.1,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-02DOI: 10.1109/TNANO.2024.3422181
Ritu Poonia;Lava Bhargava;Aasif Mohammad Bhat;C. Periasamy
This work proposed a recessed trench gate AlGaN/GaN HEMT for a potential of hydrogen ion ($rm H^+$) sensing by eliminating the need for a reference electrode. The proposed device performance has been optimized by simulating the device with the help of the ATLAS device simulation tool, considering the pH model. The sensing surface has been functionalized with APTES to improve the sensor's performance to activate the binding sites. The impact of pH solution on the device characteristic alters the threshold voltage sensitivity, drain current sensitivity, and signal-to-noise ratio. The effect of gate voltage in terms of maximum $rm g_{m}$ has also been optimized for the maximum sensitivity of the device to the pH solution. The device linearity has been utilized for $rm VIP_{3}$, $rm IIP_{3}$, and $rm IMD_{4}$. The average threshold voltage sensitivity obtained is 160.56 mV/pH, higher than the Nernstian limit (59 mV/pH), and the current sensitivity obtained is 22.93 mA/mm.pH. The device's reliability has been optimized by addressing sensor output drift across various temperature and humidity conditions. These findings suggest that the proposed structure presents a promising alternative to current ion sensing techniques.
{"title":"Recessed Trench Gate AlGaN/GaN HEMT for pH Monitoring: Design and Sensitivity Evaluation","authors":"Ritu Poonia;Lava Bhargava;Aasif Mohammad Bhat;C. Periasamy","doi":"10.1109/TNANO.2024.3422181","DOIUrl":"10.1109/TNANO.2024.3422181","url":null,"abstract":"This work proposed a recessed trench gate AlGaN/GaN HEMT for a potential of hydrogen ion (\u0000<inline-formula><tex-math>$rm H^+$</tex-math></inline-formula>\u0000) sensing by eliminating the need for a reference electrode. The proposed device performance has been optimized by simulating the device with the help of the ATLAS device simulation tool, considering the pH model. The sensing surface has been functionalized with APTES to improve the sensor's performance to activate the binding sites. The impact of pH solution on the device characteristic alters the threshold voltage sensitivity, drain current sensitivity, and signal-to-noise ratio. The effect of gate voltage in terms of maximum \u0000<inline-formula><tex-math>$rm g_{m}$</tex-math></inline-formula>\u0000 has also been optimized for the maximum sensitivity of the device to the pH solution. The device linearity has been utilized for \u0000<inline-formula><tex-math>$rm VIP_{3}$</tex-math></inline-formula>\u0000, \u0000<inline-formula><tex-math>$rm IIP_{3}$</tex-math></inline-formula>\u0000, and \u0000<inline-formula><tex-math>$rm IMD_{4}$</tex-math></inline-formula>\u0000. The average threshold voltage sensitivity obtained is 160.56 mV/pH, higher than the Nernstian limit (59 mV/pH), and the current sensitivity obtained is 22.93 mA/mm.pH. The device's reliability has been optimized by addressing sensor output drift across various temperature and humidity conditions. These findings suggest that the proposed structure presents a promising alternative to current ion sensing techniques.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"778-785"},"PeriodicalIF":2.1,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-02DOI: 10.1109/TNANO.2024.3421315
G.P.S. Prashanthi;Umakanta Nanda
Perovskite solar cells (PSCs) are a novel emerging technology that are the third generation of solar cells, following wafer-based and thin-film-based predecessors. Solar photovoltaic (PV) technology that uses perovskite materials has a significant advantage over conventional solar PV, as it can respond to various light wavelengths and increase the amount of sunlight converted to electricity. In addition, PSCs are flexible, semi-transparent, customizable, lightweight, and have a high power conversion efficiency (PCE). Through the use of dual-graded light absorber/active layers, and double perovskite lead-free material Cs$_{2}$BiAgI$_{6}$, this study seeks to increase the efficiency of PSCs. A unique device structure (ITO/ZnO/Double Perovskite Cs$_{2}$BiAgI$_{6}$/CIGS/High purity Spiro-OMeTAD/Au) of lead-free double perovskite material-based solar cell has been simulated using the SCAPS-1D one-dimensional solar cell capacitance simulator. The optimized solar cell output parameters achieved in this work include voltage in an open circuit (Voc) of 1.2258 V, current density in a short circuit (Jsc) of 34.292 mA/cm$^{2}$, fill factor (FF) of 85.95$%$, and power conversion efficiency (PCE) of 36.13$%$, which gets close to the single-junction PSCs' Shockley-Queisser Efficiency (SQ) limit.
{"title":"Highly Efficient (>36%) Lead-Free Cs2BiAgI6/CIGS Based Double Perovskite Solar Cell (DPSC) With Dual-Graded Light Absorber Layers for Next Generation Photovoltaic (PV) Technologies","authors":"G.P.S. Prashanthi;Umakanta Nanda","doi":"10.1109/TNANO.2024.3421315","DOIUrl":"10.1109/TNANO.2024.3421315","url":null,"abstract":"Perovskite solar cells (PSCs) are a novel emerging technology that are the third generation of solar cells, following wafer-based and thin-film-based predecessors. Solar photovoltaic (PV) technology that uses perovskite materials has a significant advantage over conventional solar PV, as it can respond to various light wavelengths and increase the amount of sunlight converted to electricity. In addition, PSCs are flexible, semi-transparent, customizable, lightweight, and have a high power conversion efficiency (PCE). Through the use of dual-graded light absorber/active layers, and double perovskite lead-free material Cs\u0000<inline-formula><tex-math>$_{2}$</tex-math></inline-formula>\u0000BiAgI\u0000<inline-formula><tex-math>$_{6}$</tex-math></inline-formula>\u0000, this study seeks to increase the efficiency of PSCs. A unique device structure (ITO/ZnO/Double Perovskite Cs\u0000<inline-formula><tex-math>$_{2}$</tex-math></inline-formula>\u0000BiAgI\u0000<inline-formula><tex-math>$_{6}$</tex-math></inline-formula>\u0000/CIGS/High purity Spiro-OMeTAD/Au) of lead-free double perovskite material-based solar cell has been simulated using the SCAPS-1D one-dimensional solar cell capacitance simulator. The optimized solar cell output parameters achieved in this work include voltage in an open circuit (Voc) of 1.2258 V, current density in a short circuit (Jsc) of 34.292 mA/cm\u0000<inline-formula><tex-math>$^{2}$</tex-math></inline-formula>\u0000, fill factor (FF) of 85.95\u0000<inline-formula><tex-math>$%$</tex-math></inline-formula>\u0000, and power conversion efficiency (PCE) of 36.13\u0000<inline-formula><tex-math>$%$</tex-math></inline-formula>\u0000, which gets close to the single-junction PSCs' Shockley-Queisser Efficiency (SQ) limit.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"554-561"},"PeriodicalIF":2.1,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141531031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-01DOI: 10.1109/TNANO.2024.3421263
Been Kwak;Daewoong Kwon;Hyunwoo Kim
This study introduces a ferroelectric tunnel field-effect transistor (Fe-TFET) capable of implementing three types of signal processing for frequency doubler, phase shifter, and signal follower. In addition, we verify its I/O characteristics using technology computer-aided design simulations. The proposed Fe-TFET has bidirectional tunneling currents as an inherent TFET characteristic, and the ferroelectric layer's polarization adjusts the device's threshold voltage (VTH). Depending on the degree of polarization by program voltage, the device operating within the input signal range of −0.5 to 0.5 V can be determined by the following current components: 1) source-to-channel tunneling current (ISC), 2) channel-to-drain currents (ICD), and 3) ISC and ICD. Then, through the mixed-mode circuit simulations, the I/O characteristics from each program condition are confirmed with 1) frequency doubler, 2) phase shifter, and 3) signal follower characteristics using a single Fe-TFET-based circuit. In addition, an investigation of the impact of frequency variations on the three modes reveals no attenuations in output signals. Consequently, the simple configuration and low power consumption, as opposed to conventional signal processing circuit, make the proposed processing method more suitable for analog circuit design.
{"title":"Signal-Processing Application Based on Ferroelectric Tunnel Field-Effect Transistor","authors":"Been Kwak;Daewoong Kwon;Hyunwoo Kim","doi":"10.1109/TNANO.2024.3421263","DOIUrl":"10.1109/TNANO.2024.3421263","url":null,"abstract":"This study introduces a ferroelectric tunnel field-effect transistor (Fe-TFET) capable of implementing three types of signal processing for frequency doubler, phase shifter, and signal follower. In addition, we verify its I/O characteristics using technology computer-aided design simulations. The proposed Fe-TFET has bidirectional tunneling currents as an inherent TFET characteristic, and the ferroelectric layer's polarization adjusts the device's threshold voltage (\u0000<italic>V</i>\u0000<sub>TH</sub>\u0000). Depending on the degree of polarization by program voltage, the device operating within the input signal range of −0.5 to 0.5 V can be determined by the following current components: 1) source-to-channel tunneling current \u0000<italic>(I</i>\u0000<sub>SC</sub>\u0000), 2) channel-to-drain currents (\u0000<italic>I</i>\u0000<sub>CD</sub>\u0000), and 3) \u0000<italic>I</i>\u0000<sub>SC</sub>\u0000 and \u0000<italic>I</i>\u0000<sub>CD</sub>\u0000. Then, through the mixed-mode circuit simulations, the I/O characteristics from each program condition are confirmed with 1) frequency doubler, 2) phase shifter, and 3) signal follower characteristics using a single Fe-TFET-based circuit. In addition, an investigation of the impact of frequency variations on the three modes reveals no attenuations in output signals. Consequently, the simple configuration and low power consumption, as opposed to conventional signal processing circuit, make the proposed processing method more suitable for analog circuit design.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"562-566"},"PeriodicalIF":2.1,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141504396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-28DOI: 10.1109/TNANO.2024.3420249
Abbass Hamadeh;Abbas Koujok;Salvatore Perna;Davi R. Rodrigues;Alejandro Riveros;Vitaliy Lomakin;Giovanni Finocchio;Grégoire de Loubens;Olivier Klein;Philipp Pirro
This study conducts a comprehensive investigation into the reversal mechanism of magnetic vortex cores in a nanopillar system composed of two coupled ferromagnetic dots under zero magnetic field conditions. The research employs a combination of experimental and simulation methods to gain a deeper understanding of the dynamics of magnetic vortex cores. The findings reveal that by applying a constant direct current, the orientation of the vortex cores can be manipulated, resulting in a switch in one of the dots at a specific current value. The micromagnetic simulations provide evidence that this switch is a consequence of a deformation in the vortex profile caused by the increasing velocity of the vortex cores resulting from the constant amplitude of the trajectory as frequency increases. These findings offer valuable new insights into the coupled dynamics of magnetic vortex cores and demonstrate the feasibility of manipulating their orientation using direct currents under zero magnetic field conditions. The results of this study have potential implications for the development of vortex-based non-volatile memory technologies.
{"title":"Core Reversal in Vertically Coupled Vortices: Simulation and Experimental Study","authors":"Abbass Hamadeh;Abbas Koujok;Salvatore Perna;Davi R. Rodrigues;Alejandro Riveros;Vitaliy Lomakin;Giovanni Finocchio;Grégoire de Loubens;Olivier Klein;Philipp Pirro","doi":"10.1109/TNANO.2024.3420249","DOIUrl":"10.1109/TNANO.2024.3420249","url":null,"abstract":"This study conducts a comprehensive investigation into the reversal mechanism of magnetic vortex cores in a nanopillar system composed of two coupled ferromagnetic dots under zero magnetic field conditions. The research employs a combination of experimental and simulation methods to gain a deeper understanding of the dynamics of magnetic vortex cores. The findings reveal that by applying a constant direct current, the orientation of the vortex cores can be manipulated, resulting in a switch in one of the dots at a specific current value. The micromagnetic simulations provide evidence that this switch is a consequence of a deformation in the vortex profile caused by the increasing velocity of the vortex cores resulting from the constant amplitude of the trajectory as frequency increases. These findings offer valuable new insights into the coupled dynamics of magnetic vortex cores and demonstrate the feasibility of manipulating their orientation using direct currents under zero magnetic field conditions. The results of this study have potential implications for the development of vortex-based non-volatile memory technologies.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"549-553"},"PeriodicalIF":2.1,"publicationDate":"2024-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141504397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-19DOI: 10.1109/TNANO.2024.3416509
Haitao Du;Yu Zhang;Junmin Zhou;Jiaxiang Chen;Wenbo Ye;Xu Zhang;Qifeng Lyu;Hongzhi Wang;Kei May Lau;Xinbo Zou
Machine vision as an essential component of artificial intelligence poses a significant influence on dimension measurement, quality control, autonomous driving, and so on. In this study, a high-performance ultraviolet (UV) imaging and detection system enabled by Gallium Nitride (GaN) nanowire (NW) n-i-n photodetector (PD) is presented. Based on supreme optoelectronic properties of the NW, including high responsivity of 5098 A/W, a low dark current of 4.88 pA and a photo-to-dark current ratio of 1223, machine vision system composed of a GaN NW array could achieve an accuracy of 96.21%. Furthermore, feasibility of artificial neural network (ANN) and convolutional neural network (CNN) in such a machine vision system is discussed, featuring dim and noisy environment. The visualization process shows that the superiority of CNN over ANN in image recognition is attributed to the capability of extracting spatial information and characteristics. The research results provide important insight into the development of both sensors and algorithms for machine vision systems based on GaN NW PD, inspiring further investigation into UV image detection and other areas of artificial intelligence.
机器视觉作为人工智能的重要组成部分，在尺寸测量、质量控制、自动驾驶等方面具有重要影响。本研究提出了一种由氮化镓（GaN）纳米线（NW）n-i-n 光电探测器（PD）实现的高性能紫外线（UV）成像和检测系统。基于氮化镓纳米线的最高光电特性，包括 5098 A/W 的高响应率、4.88 pA 的低暗电流和 1223 的光暗电流比，由氮化镓纳米线阵列组成的机器视觉系统可实现 96.21% 的精确度。此外，还讨论了人工神经网络（ANN）和卷积神经网络（CNN）在这种机器视觉系统中的可行性。可视化过程表明，在图像识别方面，CNN 优于 ANN 的原因在于其提取空间信息和特征的能力。这些研究成果为基于氮化镓氮化瓦 PD 的机器视觉系统的传感器和算法的开发提供了重要启示，激发了对紫外图像检测和其他人工智能领域的进一步研究。
{"title":"GaN Nanowire n-i-n Diode Enabled High-Performance UV Machine Vision System","authors":"Haitao Du;Yu Zhang;Junmin Zhou;Jiaxiang Chen;Wenbo Ye;Xu Zhang;Qifeng Lyu;Hongzhi Wang;Kei May Lau;Xinbo Zou","doi":"10.1109/TNANO.2024.3416509","DOIUrl":"10.1109/TNANO.2024.3416509","url":null,"abstract":"Machine vision as an essential component of artificial intelligence poses a significant influence on dimension measurement, quality control, autonomous driving, and so on. In this study, a high-performance ultraviolet (UV) imaging and detection system enabled by Gallium Nitride (GaN) nanowire (NW) n-i-n photodetector (PD) is presented. Based on supreme optoelectronic properties of the NW, including high responsivity of 5098 A/W, a low dark current of 4.88 pA and a photo-to-dark current ratio of 1223, machine vision system composed of a GaN NW array could achieve an accuracy of 96.21%. Furthermore, feasibility of artificial neural network (ANN) and convolutional neural network (CNN) in such a machine vision system is discussed, featuring dim and noisy environment. The visualization process shows that the superiority of CNN over ANN in image recognition is attributed to the capability of extracting spatial information and characteristics. The research results provide important insight into the development of both sensors and algorithms for machine vision systems based on GaN NW PD, inspiring further investigation into UV image detection and other areas of artificial intelligence.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"529-534"},"PeriodicalIF":2.1,"publicationDate":"2024-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141531032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The molecular Field-Coupled Nanocomputing (molFCN) paradigm encodes digital information in the charge distribution of molecules. The information propagates through electrostatic coupling within molecules, permitting minimal power consumption. Although the promising results in the design of molFCN circuits, a prototype is missing. Therefore, this work moves toward molFCN fabrication by presenting a methodology combining Finite Element Modelling with the SCERPA tool, boosting the simulation accuracy by considering both molecule and device physics. First, this work analyzes nano-trench-based molFCN single-line wires, examining information propagation dependencies on the nano-trench geometries. Then, the analysis of nano-trench-based multi-line wires points out the primary prototype specification to achieve this advantageous molFCN solution. Finally, we demonstrate the nano-trench as a valuable solution to achieve the write-in mechanism. Overall, this paper paves the way for molFCN fabrication-aware simulations for future prototyping.
{"title":"Technology-Aware Simulation for Prototyping Molecular Field-Coupled Nanocomputing","authors":"Federico Ravera;Yuri Ardesi;Gianluca Piccinini;Mariagrazia Graziano","doi":"10.1109/TNANO.2024.3415790","DOIUrl":"10.1109/TNANO.2024.3415790","url":null,"abstract":"The molecular Field-Coupled Nanocomputing (molFCN) paradigm encodes digital information in the charge distribution of molecules. The information propagates through electrostatic coupling within molecules, permitting minimal power consumption. Although the promising results in the design of molFCN circuits, a prototype is missing. Therefore, this work moves toward molFCN fabrication by presenting a methodology combining Finite Element Modelling with the SCERPA tool, boosting the simulation accuracy by considering both molecule and device physics. First, this work analyzes nano-trench-based molFCN single-line wires, examining information propagation dependencies on the nano-trench geometries. Then, the analysis of nano-trench-based multi-line wires points out the primary prototype specification to achieve this advantageous molFCN solution. Finally, we demonstrate the nano-trench as a valuable solution to achieve the write-in mechanism. Overall, this paper paves the way for molFCN fabrication-aware simulations for future prototyping.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"521-528"},"PeriodicalIF":2.1,"publicationDate":"2024-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10561616","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-17DOI: 10.1109/TNANO.2024.3415382
Elvis Díaz Machado;Jose Lopez Vicario;Enrique Miranda;Antoni Morell
Hardware neural networks (HNNs) based on crossbar arrays are expected to be energy-efficient computing architectures for solving complex tasks due to their small feature sizes. Although there exist software libraries able to deal with circuit simulation of memristor networks, they still exceed the memory available of any consumer grade GPU's VRAM for large scale crossbar arrays while having a significant computational complexity. This work discusses an iterative method to implement a fast simulation of the corresponding memristor crossbar array with much more limited memory use.
{"title":"Memristor Crossbar Array Simulation for Deep Learning Applications","authors":"Elvis Díaz Machado;Jose Lopez Vicario;Enrique Miranda;Antoni Morell","doi":"10.1109/TNANO.2024.3415382","DOIUrl":"10.1109/TNANO.2024.3415382","url":null,"abstract":"Hardware neural networks (HNNs) based on crossbar arrays are expected to be energy-efficient computing architectures for solving complex tasks due to their small feature sizes. Although there exist software libraries able to deal with circuit simulation of memristor networks, they still exceed the memory available of any consumer grade GPU's VRAM for large scale crossbar arrays while having a significant computational complexity. This work discusses an iterative method to implement a fast simulation of the corresponding memristor crossbar array with much more limited memory use.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"512-515"},"PeriodicalIF":2.1,"publicationDate":"2024-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10559273","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141516961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-17DOI: 10.1109/TNANO.2024.3415396
Ehsan Rahimi
Molecular quantum cellular automata (QCA) provides a paradigm for molecular electronics in which the configuration of charges at reduction-oxidation centers of molecules encodes binary information, and the electrostatic forces enable performing logic operations at the molecular scale. Cosmic rays or impurities in packaging materials can cause electric charges to tunnel into a QCA cell, leading to single-event upset (SEU). The effect of SUE on the functionality of a majority gate comprised of a QCA cell, in which two cationic molecular dimers interact through intermolecular Coulomb forces, is analyzed using the Hubbard model and full quantum chemical calculations. For this purpose, we introduce a complementary input model within a minimal framework for the molecular QCA majority gate. The response function of a single-input QCA cell and the polarization table of a three-input majority gate are evaluated in normal and SEU operation modes using the complementary input model in conjunction with the Hubbard model and quantum chemical calculations. The ab initio results indicate the possibility of designing SEU fault-tolerant QCA devices.
分子量子蜂窝自动机（QCA）为分子电子学提供了一种范例，在这种范例中，分子还原-氧化中心的电荷配置编码二进制信息，而静电力能够在分子尺度上执行逻辑运算。宇宙射线或封装材料中的杂质会导致电荷隧穿进入 QCA 单元，从而引发单事件干扰（SEU）。我们利用哈伯德模型和全量子化学计算分析了 SUE 对由 QCA 单元（其中两个阳离子分子二聚体通过分子间库仑力相互作用）组成的多数栅功能的影响。为此，我们在分子 QCA 多路门的最小框架内引入了一个互补输入模型。利用互补输入模型以及哈伯德模型和量子化学计算，在正常和 SEU 运行模式下评估了单输入 QCA 单元的响应函数和三输入多数门的极化表。ab initio 结果表明了设计 SEU 容错 QCA 器件的可能性。
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In this work, we investigated the effects of microwave thermal annealing (MWA) on the electrical performance and stability of Indium-Tungsten-Oxide (IWO) thin-film transistors (TFTs). Under MWA treatment at 600 W, the IWO-TFTs exhibited a subthreshold swing (SS) of 144 mV/dec and a threshold voltage (VT) of 0.9 V, demonstrating superior resistance to stress-induced degradation. The TFTs treated with MWA displayed enhanced performance compared to the as-fabricated ones in bias stress stability. As a result, MWA showed significant potential for repairing defects through post-deposition annealing with a reduced thermal budget, thereby presenting a promising application for developing back-end-of-line (BEOL) compatible oxide semiconductor technology.
在这项工作中，我们研究了微波热退火（MWA）对氧化铟-钨（IWO）薄膜晶体管（TFT）电性能和稳定性的影响。在 600 W 的 MWA 处理条件下，IWO-TFT 的亚阈值摆幅 (SS) 为 144 mV/dec，阈值电压 (VT) 为 0.9 V，显示出卓越的抗应力诱导降解能力。经 MWA 处理的 TFT 在偏压应力稳定性方面的性能比原样制造的 TFT 更强。因此，MWA 在通过沉积后退火修复缺陷方面显示出了巨大的潜力，同时降低了热预算，从而为开发兼容线后端（BEOL）的氧化物半导体技术带来了广阔的应用前景。
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