Pub Date : 2025-03-01DOI: 10.1109/TSM.2025.3546537
{"title":"Call for Papers for a Special Issue of IEEE Transactions on Materials for Electron Devices: Exploration of the Exciting world of Multifunctional Oxide-Based Electronic Devices: From Material to System-Level Applications","authors":"","doi":"10.1109/TSM.2025.3546537","DOIUrl":"https://doi.org/10.1109/TSM.2025.3546537","url":null,"abstract":"","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"38 2","pages":"361-362"},"PeriodicalIF":2.3,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10981906","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143896212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-01DOI: 10.1109/TSM.2025.3562408
{"title":"Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications","authors":"","doi":"10.1109/TSM.2025.3562408","DOIUrl":"https://doi.org/10.1109/TSM.2025.3562408","url":null,"abstract":"","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"38 2","pages":"366-367"},"PeriodicalIF":2.3,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10981903","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143896362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-01DOI: 10.1109/TSM.2025.3546541
{"title":"IEEE Transactions on Semiconductor Manufacturing Information for Authors","authors":"","doi":"10.1109/TSM.2025.3546541","DOIUrl":"https://doi.org/10.1109/TSM.2025.3546541","url":null,"abstract":"","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"38 2","pages":"C3-C3"},"PeriodicalIF":2.3,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10981905","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143896217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-01DOI: 10.1109/TSM.2025.3560207
{"title":"Call for Nominations for Editor-in-Chief: IEEE Transactions on Electron Devices","authors":"","doi":"10.1109/TSM.2025.3560207","DOIUrl":"https://doi.org/10.1109/TSM.2025.3560207","url":null,"abstract":"","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"38 2","pages":"365-365"},"PeriodicalIF":2.3,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10981911","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143896219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-01DOI: 10.1109/TSM.2025.3546535
{"title":"Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Wide Band Gap Semiconductors for Automotive Applications","authors":"","doi":"10.1109/TSM.2025.3546535","DOIUrl":"https://doi.org/10.1109/TSM.2025.3546535","url":null,"abstract":"","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"38 2","pages":"359-360"},"PeriodicalIF":2.3,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10981902","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143896354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-01DOI: 10.1109/TSM.2025.3559200
Bill Nehrer;Duane Boning;Jeanne Paulette Bickford;Tomasz Brozek;Angelo Pinto;Soichi Inoue;David Z. Pan
{"title":"Guest Editorial Introduction to the Joint Special Issue on Semiconductor Design for Manufacturing (DFM)","authors":"Bill Nehrer;Duane Boning;Jeanne Paulette Bickford;Tomasz Brozek;Angelo Pinto;Soichi Inoue;David Z. Pan","doi":"10.1109/TSM.2025.3559200","DOIUrl":"https://doi.org/10.1109/TSM.2025.3559200","url":null,"abstract":"","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"38 2","pages":"113-116"},"PeriodicalIF":2.3,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10981975","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143896357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-27DOI: 10.1109/TSM.2025.3546296
Yibo Qiao;Yanning Chen;Fang Liu;Zhouzhouzhou Mei;Yuening Luo;Yining Chen;Yiyi Liao;Bo Wu;Yongfeng Deng
In the rapidly evolving field of semiconductor manufacturing, the escalating complexity of integrated circuits poses significant challenges in identifying and analyzing defects, crucial for maintaining high wafer yield. Traditional approaches are hindered by the intricate nature of defect morphology and the scarcity of high-quality scanning electron microscope (SEM) data, essential for effective algorithm training. In this study, we propose RA-UNet for fine-grained SEM defect segmentation. RA-UNet adopts a U-shaped architecture that leverages residual networks for defect feature extraction, and introduces a residual architecture and a novel attention module to enhance the network’s focus on defects. To validate the effectiveness of the proposed model, we meticulously gathered and labeled a real SEM data set from a semiconductor manufacturing factory. The results demonstrate that RA-UNet outperforms existing methods in semiconductor defect segmentation, achieving an Intersection over Union (IoU) score of 71.92%. These findings highlight its potential as an effective tool for semiconductor defect analysis.
{"title":"RA-UNet: A New Deep Learning Segmentation Method for Semiconductor Wafer Defect Analysis on Fine-Grained Scanning Electron Microscope (SEM) Images","authors":"Yibo Qiao;Yanning Chen;Fang Liu;Zhouzhouzhou Mei;Yuening Luo;Yining Chen;Yiyi Liao;Bo Wu;Yongfeng Deng","doi":"10.1109/TSM.2025.3546296","DOIUrl":"https://doi.org/10.1109/TSM.2025.3546296","url":null,"abstract":"In the rapidly evolving field of semiconductor manufacturing, the escalating complexity of integrated circuits poses significant challenges in identifying and analyzing defects, crucial for maintaining high wafer yield. Traditional approaches are hindered by the intricate nature of defect morphology and the scarcity of high-quality scanning electron microscope (SEM) data, essential for effective algorithm training. In this study, we propose RA-UNet for fine-grained SEM defect segmentation. RA-UNet adopts a U-shaped architecture that leverages residual networks for defect feature extraction, and introduces a residual architecture and a novel attention module to enhance the network’s focus on defects. To validate the effectiveness of the proposed model, we meticulously gathered and labeled a real SEM data set from a semiconductor manufacturing factory. The results demonstrate that RA-UNet outperforms existing methods in semiconductor defect segmentation, achieving an Intersection over Union (IoU) score of 71.92%. These findings highlight its potential as an effective tool for semiconductor defect analysis.","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"38 2","pages":"185-193"},"PeriodicalIF":2.3,"publicationDate":"2025-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143896412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-25DOI: 10.1109/TSM.2025.3546217
Angel Regalado-Contreras;Wencel de la Cruz
In this study, Ti2O3 microstructures were successfully fabricated using chromium (Cr) thin films as a sacrificial layer. The process is straightforward and can be monitored using an optical microscope. Atomic Force Microscopy confirmed the structures, with the Ti2O3 thin film thickness determined to be 26 nm. In situ High-resolution X-ray Photoelectron Spectroscopy was performed, confirming the synthesis of Ti2O3 thin films by reactive laser ablation and revealing spontaneous surface oxidation, resulting in a complex surface structure: TiO2 on top, TiO as an intermediate interface, and bulk Ti2O3 beneath. The high chemical selectivity of Cr sacrificial layers ensured successful microfabrication without damaging the Ti2O3. These findings highlight the importance of surface phenomena in Ti2O3 for micro-electronic device fabrication.
{"title":"A Case Study on Sputtered Chromium Sacrificial Layer for Ti2O3 Microstructure Fabrication","authors":"Angel Regalado-Contreras;Wencel de la Cruz","doi":"10.1109/TSM.2025.3546217","DOIUrl":"https://doi.org/10.1109/TSM.2025.3546217","url":null,"abstract":"In this study, Ti2O3 microstructures were successfully fabricated using chromium (Cr) thin films as a sacrificial layer. The process is straightforward and can be monitored using an optical microscope. Atomic Force Microscopy confirmed the structures, with the Ti2O3 thin film thickness determined to be 26 nm. In situ High-resolution X-ray Photoelectron Spectroscopy was performed, confirming the synthesis of Ti2O3 thin films by reactive laser ablation and revealing spontaneous surface oxidation, resulting in a complex surface structure: TiO2 on top, TiO as an intermediate interface, and bulk Ti2O3 beneath. The high chemical selectivity of Cr sacrificial layers ensured successful microfabrication without damaging the Ti2O3. These findings highlight the importance of surface phenomena in Ti2O3 for micro-electronic device fabrication.","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"38 2","pages":"356-358"},"PeriodicalIF":2.3,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143896193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-25DOI: 10.1109/TSM.2025.3540179
{"title":"Call for Nominations for Editor-in-Chief: IEEE Transactions on Semiconductor Manufacturing","authors":"","doi":"10.1109/TSM.2025.3540179","DOIUrl":"https://doi.org/10.1109/TSM.2025.3540179","url":null,"abstract":"","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"38 1","pages":"111-111"},"PeriodicalIF":2.3,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10903517","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143489055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-25DOI: 10.1109/TSM.2025.3534591
{"title":"Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on \"Wide Band Gap Semiconductors for Automotive Applications\"","authors":"","doi":"10.1109/TSM.2025.3534591","DOIUrl":"https://doi.org/10.1109/TSM.2025.3534591","url":null,"abstract":"","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"38 1","pages":"106-107"},"PeriodicalIF":2.3,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10903515","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143489052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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