Germanium (Ge) FinFETs with HfOx-based gate stacks were fabricated to study the complementary metal oxide semiconductor (CMOS) applications. To evaluate the logic circuit operation, the associated CMOS inverters were characterized. Compared to the HfO2, Hf0.5Zr0.5Ox (HZO) gate stack provides higher drive currents and more symmetric Vth behaviors, which should be associated with the polarization effect. Through cyclic voltage transfer characteristic (VTC) operation and systematical analysis, it is found that both polarization and charge trapping in the gate stack impact the device characteristics. The HZO devices show a negative VTC shift with cycling, while the HfO2 devices reveal a positive shift. This opposite VTC behavior for both gate stack schemes indicates that the interaction of interface states and dipoles significantly influences the device operation. The results revealed in this work present a comprehensive understanding for HfOx-based device optimization.
{"title":"Investigation on Germanium Transistors with HfOx-Based Gate Stacks for CMOS Operations","authors":"Tzu-Chieh Hong, Chun-Jung Su, Yao-Jen Lee, Yiming Li, Seiji Samukawa, Tien-Sheng Chao","doi":"10.1149/2162-8777/ad1f92","DOIUrl":"https://doi.org/10.1149/2162-8777/ad1f92","url":null,"abstract":"\u0000 Germanium (Ge) FinFETs with HfOx-based gate stacks were fabricated to study the complementary metal oxide semiconductor (CMOS) applications. To evaluate the logic circuit operation, the associated CMOS inverters were characterized. Compared to the HfO2, Hf0.5Zr0.5Ox (HZO) gate stack provides higher drive currents and more symmetric Vth behaviors, which should be associated with the polarization effect. Through cyclic voltage transfer characteristic (VTC) operation and systematical analysis, it is found that both polarization and charge trapping in the gate stack impact the device characteristics. The HZO devices show a negative VTC shift with cycling, while the HfO2 devices reveal a positive shift. This opposite VTC behavior for both gate stack schemes indicates that the interaction of interface states and dipoles significantly influences the device operation. The results revealed in this work present a comprehensive understanding for HfOx-based device optimization.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139616599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-17DOI: 10.1149/2162-8777/ad1f91
Jibin Zhang, Zhong-Yuan Li, Jian Zhang
Ethylene-Propylene-Diene Rubber (EPDM) is widely utilized as a high-performance insulation material in high-voltage direct current (HVDC) cable accessories, owing to its exceptional electrical and thermal properties. In this study, we have successfully synthesized and employed 4-vinyl oxyacetophenone (VPE) as a modification agent to develop the chemically grafted EPDM materials (EPDM-g-VPE) just through thermal crosslinking reaction and melt blending approach. Infrared spectroscopy results reveal that during thermal cross-linking process, VPE efficiently grafted onto EPDM molecular-chains through free radical addition reaction. Following VPE grafting, the DC dielectric breakdown strength and electrical conductivity of EPDM are significantly increased and noticeably decreased respectively. Theoretical electronic structure calculations corroborate that VPE's electron-affinity and energy-gap enable it to efficiently absorb thermal electron energy without undergoing collision ionization, thereby enhancing EPDM's breakdown resistance. Simultaneously, VPE molecules exhibit a high affinity for capturing electron charge carriers within EPDM polymer-molecules. Space charge and thermally stimulated current tests demonstrate that the stable and uniformly distributed charge traps can be effectively introduced into EPDM matrix by grafting VPE modification, thereby suppressing transport and injection of charge carriers. Consequently, this approach substantially improves DC electrical insulation performance of EPDM.
{"title":"Ameliorated DC Insulation Performance of EPDM through Chemical Grafting with a Voltage Stabilizer","authors":"Jibin Zhang, Zhong-Yuan Li, Jian Zhang","doi":"10.1149/2162-8777/ad1f91","DOIUrl":"https://doi.org/10.1149/2162-8777/ad1f91","url":null,"abstract":"\u0000 Ethylene-Propylene-Diene Rubber (EPDM) is widely utilized as a high-performance insulation material in high-voltage direct current (HVDC) cable accessories, owing to its exceptional electrical and thermal properties. In this study, we have successfully synthesized and employed 4-vinyl oxyacetophenone (VPE) as a modification agent to develop the chemically grafted EPDM materials (EPDM-g-VPE) just through thermal crosslinking reaction and melt blending approach. Infrared spectroscopy results reveal that during thermal cross-linking process, VPE efficiently grafted onto EPDM molecular-chains through free radical addition reaction. Following VPE grafting, the DC dielectric breakdown strength and electrical conductivity of EPDM are significantly increased and noticeably decreased respectively. Theoretical electronic structure calculations corroborate that VPE's electron-affinity and energy-gap enable it to efficiently absorb thermal electron energy without undergoing collision ionization, thereby enhancing EPDM's breakdown resistance. Simultaneously, VPE molecules exhibit a high affinity for capturing electron charge carriers within EPDM polymer-molecules. Space charge and thermally stimulated current tests demonstrate that the stable and uniformly distributed charge traps can be effectively introduced into EPDM matrix by grafting VPE modification, thereby suppressing transport and injection of charge carriers. Consequently, this approach substantially improves DC electrical insulation performance of EPDM.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139616670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-17DOI: 10.1149/2162-8777/ad1f93
Krishna Sai Sriramadasu, Y. Hsin
This study introduces a novel p-GaN/AlGaN/GaN heterostructure wafer, implementing a unique p-type GaN gate AlGaN/GaN HEMT configuration. In this design, the p-GaN region extends toward the drain, eliminating the need for a gate electrode. This innovation significantly enhances the HEMT's performance, with a 45.2% increase in breakdown voltage (BV) and a 17% higher threshold voltage (VTH) compared to conventional p-GaN gate HEMTs. The extended gate design redistributes the electric field, acting as a field plate to elevate the breakdown voltage. Furthermore, the proposed device, by reducing 17.4% of the saturation current without increasing the on-resistance, possibly offers improved short-circuit capability.
{"title":"An AlGaN-GaN HEMT with p-GaN Extended Gate for Improvements on Current Dispersion and Breakdown Characteristics","authors":"Krishna Sai Sriramadasu, Y. Hsin","doi":"10.1149/2162-8777/ad1f93","DOIUrl":"https://doi.org/10.1149/2162-8777/ad1f93","url":null,"abstract":"\u0000 This study introduces a novel p-GaN/AlGaN/GaN heterostructure wafer, implementing a unique p-type GaN gate AlGaN/GaN HEMT configuration. In this design, the p-GaN region extends toward the drain, eliminating the need for a gate electrode. This innovation significantly enhances the HEMT's performance, with a 45.2% increase in breakdown voltage (BV) and a 17% higher threshold voltage (VTH) compared to conventional p-GaN gate HEMTs. The extended gate design redistributes the electric field, acting as a field plate to elevate the breakdown voltage. Furthermore, the proposed device, by reducing 17.4% of the saturation current without increasing the on-resistance, possibly offers improved short-circuit capability.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139617289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-17DOI: 10.1149/2162-8777/ad1f90
in young Chung, Guanghai Kim, Hyunsik Yoon
In this work, the large AMOLED Display Backplane LTPS 5Mask PA method was studied. A storage cap was formed by doping boron on the poly Si under the GI cap in the contact hole process without using a storage cap doping mask. In the contact hole process, half-tone PR was used to simultaneously perform cap doping and TFT source drain open. Because half-tone PR must remain uniform to protect the cap lead-in end with GI uniformly within 8G Glass, photolithography PR process conditions with good half-tone uniformity were set up.
在这项工作中，研究了大型 AMOLED 显示器背板 LTPS 5Mask PA 方法。在接触孔工艺中，通过在 GI 盖下的多晶硅上掺杂硼来形成存储盖，而无需使用存储盖掺杂掩模。在接触孔工艺中，使用半色调 PR 同时进行盖掺杂和 TFT 源漏极开路。由于半色调 PR 必须保持均匀，以便在 8G 玻璃内均匀地保护带有 GI 的盖帽引出端，因此设置了具有良好半色调均匀性的光刻 PR 工艺条件。
{"title":"A Study on the Large AMOLED Display Backplane-Less Mask Process","authors":"in young Chung, Guanghai Kim, Hyunsik Yoon","doi":"10.1149/2162-8777/ad1f90","DOIUrl":"https://doi.org/10.1149/2162-8777/ad1f90","url":null,"abstract":"\u0000 In this work, the large AMOLED Display Backplane LTPS 5Mask PA method was studied. A storage cap was formed by doping boron on the poly Si under the GI cap in the contact hole process without using a storage cap doping mask. In the contact hole process, half-tone PR was used to simultaneously perform cap doping and TFT source drain open. Because half-tone PR must remain uniform to protect the cap lead-in end with GI uniformly within 8G Glass, photolithography PR process conditions with good half-tone uniformity were set up.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139617537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-17DOI: 10.1149/2162-8777/ad1f8e
Supriyal Subramani
The invention of yttrium titanates (Y2Ti2O7) with various exciting properties in electroceramics has created great attention among industrialists and researchers. Improving the materials of pyrochlore oxides with significant properties for future electronic devices became essential. The Y2Ti2O7 is one such cubic pyrochlore at room temperature, having excellent dielectric and luminescence properties. This article comprehensively reviews the basics and state-of-the-art in developing Y2Ti2O7 ceramics. This material is widely used for electronic devices: transducers, capacitors, optoelectronic components, and light modulators. This review focuses on the fabrication methods and crystal structure mechanisms for optimizing functional properties and current challenges. Moreover, the effect of doping elements of Y2Ti2O7-based ceramics is briefly discussed. Also, future perspectives are provided to spotlight new and trending research directions in this materials research.
{"title":"Review —Recent Advances in Yttrium Titanate Pyrochlores: Crystal Structure and Impact of Doping Elements","authors":"Supriyal Subramani","doi":"10.1149/2162-8777/ad1f8e","DOIUrl":"https://doi.org/10.1149/2162-8777/ad1f8e","url":null,"abstract":"\u0000 The invention of yttrium titanates (Y2Ti2O7) with various exciting properties in electroceramics has created great attention among industrialists and researchers. Improving the materials of pyrochlore oxides with significant properties for future electronic devices became essential. The Y2Ti2O7 is one such cubic pyrochlore at room temperature, having excellent dielectric and luminescence properties. This article comprehensively reviews the basics and state-of-the-art in developing Y2Ti2O7 ceramics. This material is widely used for electronic devices: transducers, capacitors, optoelectronic components, and light modulators. This review focuses on the fabrication methods and crystal structure mechanisms for optimizing functional properties and current challenges. Moreover, the effect of doping elements of Y2Ti2O7-based ceramics is briefly discussed. Also, future perspectives are provided to spotlight new and trending research directions in this materials research.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139616178","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-17DOI: 10.1149/2162-8777/ad1f8f
Nour el houda Habibes, Abdelkader Boukortt, S. Meskine, Abdesamed Benbedra, Yousra Mamouni, H. Bennacer
HgSe is a mercury chalcogenide material of the HgX family (where X = S, Se, Te) which crystallises in the zincblende crystal phase. The electronic band structure of HgSe is indicative of a new state of matter in the condensed phase that is of great interest for fundamental physics and possibly new applications. This paper reports ab-initio calculations of the structural, electronic, magnetic, and optical properties of zincblende mercury selenide (HgSe) doped with manganese (Mn) in the inter sites HgMnxSe, with x = 0, 0.058, and 0.117, using the framework of spin-polarized density functional theory. The aim of our investigation is to discuss the different properties of this doped material in order to improve the promising new domain of spintronics with topological systems. Both the GGA+U+mBJ approach and spin-orbit coupling are used for band structure calculations and density of states. The results show a nontrivial topological semimetal order for HgSe and a ferromagnetic topological and metallic behaviour for HgMnxSe. The frequency response of optical properties shows interesting characteristics. Furthermore, the variation with concentration x of the critical point for each of the optical parameters is similar to that of the inverted band gap.
HgSe 是 HgX 族（其中 X = S、Se、Te）中的一种铬化汞材料，以黝帘石晶相结晶。HgSe 的电子能带结构表明了凝聚态物质的一种新状态，对基础物理学和可能的新应用具有重大意义。本文报告了利用自旋极化密度泛函理论框架，对掺杂了锰（Mn）的硒化鋅（HgSe）的结构、电子、磁性和光学特性进行的非线性计算。我们研究的目的是讨论这种掺杂材料的不同特性，以改善具有拓扑系统的自旋电子学这一新领域的前景。GGA+U+mBJ 方法和自旋轨道耦合都被用于带状结构计算和态密度计算。结果表明，HgSe 具有非微不足道的拓扑半金属阶，HgMnxSe 具有铁磁性拓扑和金属特性。光学特性的频率响应显示出有趣的特征。此外，每个光学参数的临界点随浓度 x 的变化与倒带隙的变化相似。
{"title":"Electronic and Optical Properties of Mn-Doped HgSe Topological Insulator for Spintronic Devices","authors":"Nour el houda Habibes, Abdelkader Boukortt, S. Meskine, Abdesamed Benbedra, Yousra Mamouni, H. Bennacer","doi":"10.1149/2162-8777/ad1f8f","DOIUrl":"https://doi.org/10.1149/2162-8777/ad1f8f","url":null,"abstract":"\u0000 HgSe is a mercury chalcogenide material of the HgX family (where X = S, Se, Te) which crystallises in the zincblende crystal phase. The electronic band structure of HgSe is indicative of a new state of matter in the condensed phase that is of great interest for fundamental physics and possibly new applications. This paper reports ab-initio calculations of the structural, electronic, magnetic, and optical properties of zincblende mercury selenide (HgSe) doped with manganese (Mn) in the inter sites HgMnxSe, with x = 0, 0.058, and 0.117, using the framework of spin-polarized density functional theory. The aim of our investigation is to discuss the different properties of this doped material in order to improve the promising new domain of spintronics with topological systems. Both the GGA+U+mBJ approach and spin-orbit coupling are used for band structure calculations and density of states. The results show a nontrivial topological semimetal order for HgSe and a ferromagnetic topological and metallic behaviour for HgMnxSe. The frequency response of optical properties shows interesting characteristics. Furthermore, the variation with concentration x of the critical point for each of the optical parameters is similar to that of the inverted band gap.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139617511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We used a simple sol-gel synthesis technique to prepare hexagonal Ba3(VO4)2. X-ray diffraction (XRD), Fourier transform infrared (FTIR), and Raman spectroscopy were performed, confirming that Ba3(VO4)2 has a hexagonal structure. To investigate the influence of interfacial interactions at grain boundaries on microwave absorption, atomic force microscopy studies were performed. UV-Vis studies show the direct and indirect optical energy band gaps of Ba3(VO4)2 were determined as 3.81and 3.25 eV, respectively. The dielectric studies reveal that the dielectric constant (ε׳) of Ba3(VO4)2 ranges from 1.55 to 6.02 in the frequency range of 2-20 GHz, with an average ε׳ value of 3.84. The microwave absorption properties of Ba3(VO4)2 were evaluated in the frequency range of 8-18 GHz, covering the X and Ku bands at different thicknesses from 4.5 to 8 mm. The highest effective absorption bandwidth (EAB) of 4.44 GHz was observed within the frequency range of 12.83-17.27 GHz, with a maximum reflection loss of -71.43 dB at a resonance frequency of 15.05 GHz. Additionally, at a thickness of 7.5 mm, Ba3(VO4)2 achieved a maximum reflection loss of -75.22 dB at 10.03 GHz, with an EAB of 2.94 GHz (covering the X band from 8.57 GHz to 11.51 GHz).
{"title":"Optical, Dielectric, and Electromagnetic Microwave Absorption Properties of Hexagonal Ba3(VO4)2","authors":"Praveen Chenna, Saran Srihari Sripada Panda, Sahil Sharma, S. Gandi, Sadi Reddy Parne","doi":"10.1149/2162-8777/ad1ed0","DOIUrl":"https://doi.org/10.1149/2162-8777/ad1ed0","url":null,"abstract":"\u0000 We used a simple sol-gel synthesis technique to prepare hexagonal Ba3(VO4)2. X-ray diffraction (XRD), Fourier transform infrared (FTIR), and Raman spectroscopy were performed, confirming that Ba3(VO4)2 has a hexagonal structure. To investigate the influence of interfacial interactions at grain boundaries on microwave absorption, atomic force microscopy studies were performed. UV-Vis studies show the direct and indirect optical energy band gaps of Ba3(VO4)2 were determined as 3.81and 3.25 eV, respectively. The dielectric studies reveal that the dielectric constant (ε׳) of Ba3(VO4)2 ranges from 1.55 to 6.02 in the frequency range of 2-20 GHz, with an average ε׳ value of 3.84. The microwave absorption properties of Ba3(VO4)2 were evaluated in the frequency range of 8-18 GHz, covering the X and Ku bands at different thicknesses from 4.5 to 8 mm. The highest effective absorption bandwidth (EAB) of 4.44 GHz was observed within the frequency range of 12.83-17.27 GHz, with a maximum reflection loss of -71.43 dB at a resonance frequency of 15.05 GHz. Additionally, at a thickness of 7.5 mm, Ba3(VO4)2 achieved a maximum reflection loss of -75.22 dB at 10.03 GHz, with an EAB of 2.94 GHz (covering the X band from 8.57 GHz to 11.51 GHz).","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139620713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-10DOI: 10.1149/2162-8777/ad2332
A. Talukder, Md Tashfiq Bin Kashem, R. Khan, F. Dirisaglik, A. Gokirmak, H. Silva
We characterized resistance drift in phase change memory devices in the 80 K to 300 K temperature range by performing measurements on 20 nm thick, ~70 – 100 nm wide lateral Ge2Sb2Te5 (GST) line cells. The cells were amorphized using 1.5 – 2.5 V pulses with ~50 – 100 ns duration leading to ~0.4 – 1.1 mA peak reset currents resulting in amorphized lengths between ~50 and 700 nm. Resistance drift coefficients in the amorphized cells are calculated using constant voltage measurements starting as fast as within a second after amorphization and for 1 hour duration. Drift coefficients range between ~0.02 and 0.1 with significant device-to-device variability and variations during the measurement period. At lower temperatures (higher resistance states) some devices show a complex dynamic behavior, with the resistance repeatedly increasing and decreasing significantly over periods in the order of seconds. These results point to charge trapping and de-trapping events as the cause of resistance drift.
{"title":"Resistance Drift in Melt-Quenched Ge2Sb2Te5 Phase Change Memory Line Cells at Cryogenic Temperatures","authors":"A. Talukder, Md Tashfiq Bin Kashem, R. Khan, F. Dirisaglik, A. Gokirmak, H. Silva","doi":"10.1149/2162-8777/ad2332","DOIUrl":"https://doi.org/10.1149/2162-8777/ad2332","url":null,"abstract":"\u0000 We characterized resistance drift in phase change memory devices in the 80 K to 300 K temperature range by performing measurements on 20 nm thick, ~70 – 100 nm wide lateral Ge2Sb2Te5 (GST) line cells. The cells were amorphized using 1.5 – 2.5 V pulses with ~50 – 100 ns duration leading to ~0.4 – 1.1 mA peak reset currents resulting in amorphized lengths between ~50 and 700 nm. Resistance drift coefficients in the amorphized cells are calculated using constant voltage measurements starting as fast as within a second after amorphization and for 1 hour duration. Drift coefficients range between ~0.02 and 0.1 with significant device-to-device variability and variations during the measurement period. At lower temperatures (higher resistance states) some devices show a complex dynamic behavior, with the resistance repeatedly increasing and decreasing significantly over periods in the order of seconds. These results point to charge trapping and de-trapping events as the cause of resistance drift.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139627692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-09DOI: 10.1149/2162-8777/ad1c8b
Aditi Nain, Ekta Dhanda, R. Chahal, Sanjay Dahiya
PVA incorporated with different content of CdS-Ag nanostructures were prepared using a chemical reduction technique. Along with this these nanocomposites were exposed to UV radiated for different times. The X-ray spectra of PVA /CdS-Ag nanocomposites indicated the formation of CdS and Ag nanostructures within PVA. Changes in the band structure of nanocomposites with and without UV exposure were studied by UV-Visible spectroscopy. Absorbance and refractive index showed incremental increases with the concentration of nanostructures and time of exposure. In addition, the behaviour of different optical parameters such as E˳ and Ed was investigated. Field-emission scanning electron microscopy and energy-dispersive X-ray analysis showed microstructural modification occurring in the nanocomposites due to changes in the concentration of incorporated nanostructures and UV radiation. The influence of concentration and UV exposure on conductivity and dielectric parameters on PVA/CdS-Ag nanocomposites was studied.
采用化学还原技术制备了含有不同含量 CdS-Ag 纳米结构的 PVA。同时，将这些纳米复合材料暴露在不同时间的紫外线辐射下。PVA /CdS-Ag 纳米复合材料的 X 射线光谱表明，在 PVA 中形成了 CdS 和 Ag 纳米结构。紫外-可见光谱法研究了纳米复合材料在紫外线照射和未照射时的带状结构变化。吸光率和折射率随着纳米结构浓度和暴露时间的增加而增加。此外，还研究了 E˳ 和 Ed 等不同光学参数的特性。场发射扫描电子显微镜和能量色散 X 射线分析表明，由于加入的纳米结构浓度和紫外线辐射的变化，纳米复合材料的微观结构发生了改变。研究了浓度和紫外线照射对 PVA/CdS-Ag 纳米复合材料电导率和介电参数的影响。
{"title":"PVA/CdS-Ag Nanocomposites: Effect of Composition and UV Radiation on Optical, Electrical and Structural Properties","authors":"Aditi Nain, Ekta Dhanda, R. Chahal, Sanjay Dahiya","doi":"10.1149/2162-8777/ad1c8b","DOIUrl":"https://doi.org/10.1149/2162-8777/ad1c8b","url":null,"abstract":"\u0000 PVA incorporated with different content of CdS-Ag nanostructures were prepared using a chemical reduction technique. Along with this these nanocomposites were exposed to UV radiated for different times. The X-ray spectra of PVA /CdS-Ag nanocomposites indicated the formation of CdS and Ag nanostructures within PVA. Changes in the band structure of nanocomposites with and without UV exposure were studied by UV-Visible spectroscopy. Absorbance and refractive index showed incremental increases with the concentration of nanostructures and time of exposure. In addition, the behaviour of different optical parameters such as E˳ and Ed was investigated. Field-emission scanning electron microscopy and energy-dispersive X-ray analysis showed microstructural modification occurring in the nanocomposites due to changes in the concentration of incorporated nanostructures and UV radiation. The influence of concentration and UV exposure on conductivity and dielectric parameters on PVA/CdS-Ag nanocomposites was studied.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139442882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-09DOI: 10.1149/2162-8777/ad1c88
Ryosuke Okuyama, T. Kadono, Ayumi Onaka-Masada, Akihiro Suzuki, Koji Kobayashi, S. Shigematsu, R. Hirose, Yoshihiro Koga, K. Kurita
The reduction in SiO2/Si interface state density (Dit) at the SiO2/Si interface region is important for improving the performance of complementary metal-oxide semiconductor (CMOS) image sensors. The CH3O-ion-implanted region stores hydrogen and releases the stored hydrogen during the subsequent heat treatment. This study demonstrates that a CH3O-ion-implanted epitaxial silicon wafer can reduce the Dit and Pb0 center density in SiO2/Si interface regions, as analyzed by quasi-static capacitance–voltage and electron spin resonance measurements, respectively. Both Dit and Pb0 center density in the CH3O-implanted wafer decreased with increasing heat treatment temperature. Moreover, the activation energy is estimated to be 1.57 eV for the hydrogen termination reactions induced by the CH3O-ion-implanted wafer. The activation energy is close to those of hydrogen molecules and Si dangling bonds at the SiO2/Si interface. The termination effect of the CH3O-molecular-ion-implanted epitaxial silicon wafers can contribute to the high electrical performance of CMOS image sensors.
降低二氧化硅/硅界面区的二氧化硅/硅界面态密度（Dit）对于提高互补金属氧化物半导体（CMOS）图像传感器的性能非常重要。CH3O 离子注入区可储存氢气，并在随后的热处理过程中释放出所储存的氢气。本研究通过准静态电容-电压测量和电子自旋共振测量分别分析表明，CH3O 离子注入外延硅晶片可降低二氧化硅/硅界面区的 Dit 和 Pb0 中心密度。随着热处理温度的升高，CH3O 植入晶片中的 Dit 和 Pb0 中心密度都有所下降。此外，CH3O 离子注入晶片诱导的氢终止反应的活化能估计为 1.57 eV。该活化能与二氧化硅/硅界面上氢分子和硅悬键的活化能接近。CH3O分子离子植入外延硅片的终止效应有助于提高CMOS图像传感器的电气性能。
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