Pub Date : 2024-05-13DOI: 10.35848/1347-4065/ad4a7e
Takahiro Goya, Keiichiro Urabe, Koji Eriguchi
Indium phosphide (InP) has been focused on as one of emerging materials that can be implemented in advanced semiconductor devices. We proposed optical and electrical characterization methods to evaluate plasma-induced physical damage (PPD)—ion bombardment damage—to InP substrates. By introducing a native oxide phase in an interfacial layer, we proposed an optical model of the damaged structure applicable for an in-line monitoring by spectroscopic ellipsometry. Gas species dependence was obtained, which suggested that the H2 plasma exposure formed a thicker damaged layer than Ar. An impedance spectroscopy (IS) under various biases (V b) was implemented to reveal the nature of damaged structures. Capacitive and conductive components assigned by the IS were confirmed to depend on incident species from plasma, indicating the difference of the energy profile of created defects. The presented methods are useful to characterize and control PPD in designing future high-performance InP-based devices.
{"title":"Optical and electrical evaluation methods of plasma-induced damage in InP substrates","authors":"Takahiro Goya, Keiichiro Urabe, Koji Eriguchi","doi":"10.35848/1347-4065/ad4a7e","DOIUrl":"https://doi.org/10.35848/1347-4065/ad4a7e","url":null,"abstract":"\u0000 Indium phosphide (InP) has been focused on as one of emerging materials that can be implemented in advanced semiconductor devices. We proposed optical and electrical characterization methods to evaluate plasma-induced physical damage (PPD)—ion bombardment damage—to InP substrates. By introducing a native oxide phase in an interfacial layer, we proposed an optical model of the damaged structure applicable for an in-line monitoring by spectroscopic ellipsometry. Gas species dependence was obtained, which suggested that the H2 plasma exposure formed a thicker damaged layer than Ar. An impedance spectroscopy (IS) under various biases (V\u0000 b) was implemented to reveal the nature of damaged structures. Capacitive and conductive components assigned by the IS were confirmed to depend on incident species from plasma, indicating the difference of the energy profile of created defects. The presented methods are useful to characterize and control PPD in designing future high-performance InP-based devices.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"44 19","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140983827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-10DOI: 10.35848/1347-4065/ad49f2
Ferriady Setiawan, M. Kadota, Shuji Tanaka
In this study, a first shear horizontal (SH1) mode plate wave resonator for high-frequency and wide-band filters was investigated. From FEM simulation, SH1 mode plate wave exhibited a high phase velocity of 23 km/s and a high electro-mechanical coupling factor (k2) of 37% on (0°, 85°, 0°) LiNbO3 (LN) with a thickness of 0.1λ (λ: wavelength). The SH1 mode resonator was fabricated on a 0.5-0.57 µm thick LN film. An 80 nm Al IDT electrode was formed with λ varied from 4-16 μm. Finally, 50 nm thick Al was deposited to form an electrically short bottom plane, which was required to generate an SH1 mode wave. The fabricated device exhibited a resonance frequency (fr) of 2.24 GHz, an anti-resonance frequency (fa) of 2.8 GHz, a wide fractional bandwidth (FBW) of 20%, an impedance (Z) ratio of 35.4 dB, and TCF of -90.8 ppm/°C at fr and -74.8 ppm/°C at fa.
{"title":"3.2 GHz first shear horizontal mode plate wave resonator on 175°YX LiNbO3 thin plate showed 24.6% bandwidth","authors":"Ferriady Setiawan, M. Kadota, Shuji Tanaka","doi":"10.35848/1347-4065/ad49f2","DOIUrl":"https://doi.org/10.35848/1347-4065/ad49f2","url":null,"abstract":"\u0000 In this study, a first shear horizontal (SH1) mode plate wave resonator for high-frequency and wide-band filters was investigated. From FEM simulation, SH1 mode plate wave exhibited a high phase velocity of 23 km/s and a high electro-mechanical coupling factor (k2) of 37% on (0°, 85°, 0°) LiNbO3 (LN) with a thickness of 0.1λ (λ: wavelength). The SH1 mode resonator was fabricated on a 0.5-0.57 µm thick LN film. An 80 nm Al IDT electrode was formed with λ varied from 4-16 μm. Finally, 50 nm thick Al was deposited to form an electrically short bottom plane, which was required to generate an SH1 mode wave. The fabricated device exhibited a resonance frequency (fr) of 2.24 GHz, an anti-resonance frequency (fa) of 2.8 GHz, a wide fractional bandwidth (FBW) of 20%, an impedance (Z) ratio of 35.4 dB, and TCF of -90.8 ppm/°C at fr and -74.8 ppm/°C at fa.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":" 64","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140991630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-10DOI: 10.35848/1347-4065/ad49f3
Kenta Yachida, T. Matsuda, Hidenori Kawanishi, Mutsumi Kimura
A thin-film memristor using an amorphous metal-oxide semiconductor (AOS) with a gradient composition of conducting components has been developed, which is another way to achieve memristive properties. The advantages are that conductivity distribution is already obtained as fabricated without forming operation, and an analog characteristic is obtained by optimizing the component composition in AOS. As the binary characteristic, the set operation induces the transition from a low conductance state (LCS) to a high conductance state (HCS), whereas the reset operation does vice-versa. The switching ratio (SR) is high, 448. As the analog characteristic, the SR becomes greater rapidly as the Vset increases, namely, the dynamic range is outstanding.
使用具有梯度导电成分的非晶金属氧化物半导体（AOS）开发出了一种薄膜忆阻器，这是实现忆阻器特性的另一种方法。其优点是在制造过程中无需成型操作即可获得导电率分布，并通过优化 AOS 中的成分组成获得模拟特性。作为二进制特性，设定操作会导致从低电导状态（LCS）过渡到高电导状态（HCS），而复位操作则相反。开关比（SR）很高，为 448。与模拟特性一样，随着 Vset 的增大，SR 会迅速变大，即动态范围非常突出。
{"title":"Thin-film memristor using an amorphous metal-oxide semiconductor with a gradient composition of conducting components","authors":"Kenta Yachida, T. Matsuda, Hidenori Kawanishi, Mutsumi Kimura","doi":"10.35848/1347-4065/ad49f3","DOIUrl":"https://doi.org/10.35848/1347-4065/ad49f3","url":null,"abstract":"\u0000 A thin-film memristor using an amorphous metal-oxide semiconductor (AOS) with a gradient composition of conducting components has been developed, which is another way to achieve memristive properties. The advantages are that conductivity distribution is already obtained as fabricated without forming operation, and an analog characteristic is obtained by optimizing the component composition in AOS. As the binary characteristic, the set operation induces the transition from a low conductance state (LCS) to a high conductance state (HCS), whereas the reset operation does vice-versa. The switching ratio (SR) is high, 448. As the analog characteristic, the SR becomes greater rapidly as the Vset increases, namely, the dynamic range is outstanding.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":" 59","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140991314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-09DOI: 10.35848/1347-4065/ad493a
Min Liang, Wenyao Liu, Ziwen Pan, Rong Wang, Enbo Xing, Yanru Zhou, Jun Tang, Jun Liu
The design and fabrication processes of stimulated Brillouin laser (SBL) is complex, and it is affected by many factors such as temperature and resonance shift. In this study, we have fabricated a Brillouin laser using fiber ring resonator (FRR), with Q factor=7.1×10^8, resonance depth (h)=96%, and the free spectral range (FSR) automatic feedback control technology is proposed to realize the accurate matching of the resonant mode and the Stokes mode. The influence of temperature on the SBL frequency shift is suppressed. The fluctuation range of SBL’s frequency decreases by 5 times. The maximum steady state output of SBL at the best matching position is realized, and output power fluctuation range decreases by 15 times. The power stability of SBL reaches 4.85×10^(-6), which is improved by two orders of magnitude. This simple scheme provides convenience for the application of SBL, such as sensing and other applications.
{"title":"Highly stable Brillouin laser with controllable tuning based on fiber ring resonator","authors":"Min Liang, Wenyao Liu, Ziwen Pan, Rong Wang, Enbo Xing, Yanru Zhou, Jun Tang, Jun Liu","doi":"10.35848/1347-4065/ad493a","DOIUrl":"https://doi.org/10.35848/1347-4065/ad493a","url":null,"abstract":"\u0000 The design and fabrication processes of stimulated Brillouin laser (SBL) is complex, and it is affected by many factors such as temperature and resonance shift. In this study, we have fabricated a Brillouin laser using fiber ring resonator (FRR), with Q factor=7.1×10^8, resonance depth (h)=96%, and the free spectral range (FSR) automatic feedback control technology is proposed to realize the accurate matching of the resonant mode and the Stokes mode. The influence of temperature on the SBL frequency shift is suppressed. The fluctuation range of SBL’s frequency decreases by 5 times. The maximum steady state output of SBL at the best matching position is realized, and output power fluctuation range decreases by 15 times. The power stability of SBL reaches 4.85×10^(-6), which is improved by two orders of magnitude. This simple scheme provides convenience for the application of SBL, such as sensing and other applications.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":" 5","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140997374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-07DOI: 10.35848/1347-4065/ad47fe
Rina Takeyama, Shohei Mori, Nobuo Masauzi, M. Arakawa, S. Yashiro, Yasushi Ishigaki, H. Kanai
We have studied a noninvasive and quantitative method for measuring the aggregate size of red blood cells (RBCs). In our previous study, the scattering power spectrum obtained from the vascular lumen was fitted to the reference scattering spectra calculated from the scattering spectrum of a single-sphere scatterer. In this paper, we propose a method for calculating the reference scattering spectra by summing the scattering spectra for numerous scatterers in the ultrasound focal region. By applying this method to the size estimation of microparticles simulating RBC aggregates, the estimated sizes are found to be close to the true values. In in vivo measurements, the estimated sizes at rest are equivalent to the size of a single sphere with the same volume as an RBC, and those during avascularization are larger than those at rest, which is reasonable. The proposed method has the potential to accurately estimate the size of RBC aggregates.
{"title":"Estimation of red blood cell aggregation size using power spectrum considering density of red blood cells in focal region","authors":"Rina Takeyama, Shohei Mori, Nobuo Masauzi, M. Arakawa, S. Yashiro, Yasushi Ishigaki, H. Kanai","doi":"10.35848/1347-4065/ad47fe","DOIUrl":"https://doi.org/10.35848/1347-4065/ad47fe","url":null,"abstract":"\u0000 We have studied a noninvasive and quantitative method for measuring the aggregate size of red blood cells (RBCs). In our previous study, the scattering power spectrum obtained from the vascular lumen was fitted to the reference scattering spectra calculated from the scattering spectrum of a single-sphere scatterer. In this paper, we propose a method for calculating the reference scattering spectra by summing the scattering spectra for numerous scatterers in the ultrasound focal region. By applying this method to the size estimation of microparticles simulating RBC aggregates, the estimated sizes are found to be close to the true values. In in vivo measurements, the estimated sizes at rest are equivalent to the size of a single sphere with the same volume as an RBC, and those during avascularization are larger than those at rest, which is reasonable. The proposed method has the potential to accurately estimate the size of RBC aggregates.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"56 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141003065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-07DOI: 10.35848/1347-4065/ad483d
Munaswamy Murugesh, Koichi Sasaki
We succeeded in depositing amorphous carbon films around tin nanodroplets retained in a capacitively coupled plasma (CCP). High-pressure magnetron sputtering was used for synthesizing tin nanoparticles at the top of a vacuum chamber. Tin nanoparticles were transported to CCP at the bottom of the chamber, and they were trapped in the sheath above an rf electrode. Tin nanoparticles were heated above the melting point by ion bombardment in CCP. We introduced methane into CCP to deposit amorphous carbon films around melted tin nanoparticles. The transmission electron microscope (TEM) images of core-shell nanoparticles showed completely spherical cores. We observed the melting of cores at the melting point of metal tin when we heated core-shell nanoparticles in TEM, suggesting that the amorphous carbon films protected cores from the oxidation. In addition, the amorphous carbon films were robust against the volume expansion of the cores due to melting.
我们成功地在电容耦合等离子体（CCP）中保留的锡纳米液滴周围沉积了无定形碳薄膜。高压磁控溅射用于在真空室顶部合成纳米锡粒子。纳米锡颗粒被输送到真空室底部的电容耦合等离子体中，并被截留在射频电极上方的护套中。在 CCP 中，通过离子轰击将纳米锡粒子加热到熔点以上。我们将甲烷引入 CCP，在熔化的纳米锡粒子周围沉积无定形碳薄膜。核壳纳米粒子的透射电子显微镜（TEM）图像显示出完全球形的核。在 TEM 中加热核壳纳米粒子时，我们观察到核在金属锡的熔点处熔化，这表明无定形碳薄膜保护了核免受氧化。此外，无定形碳薄膜还能防止芯核因熔化而导致的体积膨胀。
{"title":"Synthesis of core-shell nanoparticles with liquid core using magnetron sputtering and capacitively coupled dusty plasmas","authors":"Munaswamy Murugesh, Koichi Sasaki","doi":"10.35848/1347-4065/ad483d","DOIUrl":"https://doi.org/10.35848/1347-4065/ad483d","url":null,"abstract":"\u0000 We succeeded in depositing amorphous carbon films around tin nanodroplets retained in a capacitively coupled plasma (CCP). High-pressure magnetron sputtering was used for synthesizing tin nanoparticles at the top of a vacuum chamber. Tin nanoparticles were transported to CCP at the bottom of the chamber, and they were trapped in the sheath above an rf electrode. Tin nanoparticles were heated above the melting point by ion bombardment in CCP. We introduced methane into CCP to deposit amorphous carbon films around melted tin nanoparticles. The transmission electron microscope (TEM) images of core-shell nanoparticles showed completely spherical cores. We observed the melting of cores at the melting point of metal tin when we heated core-shell nanoparticles in TEM, suggesting that the amorphous carbon films protected cores from the oxidation. In addition, the amorphous carbon films were robust against the volume expansion of the cores due to melting.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"26 14","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141005251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-02DOI: 10.35848/1347-4065/ad4656
Kazuki Komiya, Yoshikazu Teranishi, Hidehiko Yamaoka, Shuichi Date, Ming Yang
In this study, ion implantation was adopted to treat surface of the mold for improving detachability in the nanoimprinting. A nanoimprinting was performed successfully for fabrication a micro-electrode pattern with a smallest dimension of 100 nm by using the treated mold with proper condition. It is found that both of the wettability and roughness of the mold surface affect the detachability and it is important to decrease the wettability and keep the surface roughness lower. An optimal dose volume exists for the detachability
{"title":"Prototyping of microelectrode devices applied by transfer printing","authors":"Kazuki Komiya, Yoshikazu Teranishi, Hidehiko Yamaoka, Shuichi Date, Ming Yang","doi":"10.35848/1347-4065/ad4656","DOIUrl":"https://doi.org/10.35848/1347-4065/ad4656","url":null,"abstract":"\u0000 In this study, ion implantation was adopted to treat surface of the mold for improving detachability in the nanoimprinting. A nanoimprinting was performed successfully for fabrication a micro-electrode pattern with a smallest dimension of 100 nm by using the treated mold with proper condition. It is found that both of the wettability and roughness of the mold surface affect the detachability and it is important to decrease the wettability and keep the surface roughness lower. An optimal dose volume exists for the detachability","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"41 5","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141019354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-02DOI: 10.35848/1347-4065/ad46b3
Xiaoli Li, Fengxiang Chen, Xiaodong Wang, Lisheng Wang
The simulation of advanced synaptic functions of the human brain by electrical devices could be an effective strategy towards constructing high-efficiency neuromorphic systems. Two-dimensional (2D) materials are promising candidates in fabrication of optoelectronic devices due to their excellent photoelectric performances. Herein, opto-electronic synapses based on layered MoS2/SnSe2 van der Waals heterojunction (vdWH) memtransistors have been investigated. It can be observed that the typical synaptic functions, such as excitatory/inhibitory postsynaptic current (EPSC/IPSC), long-term potentiation/depression (LTP/LTD), paired-pulse facilitation/depression (PPF/PPD), as well as the transition from short-term memory (STM) to long-term memory (LTM) are realized using both electrical and optical pulses as input signals. In addition, the time constant for PPF under optical pulses was 3.91 s, which was comparable with the response times of biological neural synapses. So the MoS2/SnSe2 memtransistor could work as an electronic synapse in future artificial neural networks, inspiring the implementation of 2D materials for neuromorphic computation.
{"title":"Emulation of optical and electrical synaptic functions in MoS2/SnSe2 van der Waals heterojunction memtransistors","authors":"Xiaoli Li, Fengxiang Chen, Xiaodong Wang, Lisheng Wang","doi":"10.35848/1347-4065/ad46b3","DOIUrl":"https://doi.org/10.35848/1347-4065/ad46b3","url":null,"abstract":"\u0000 The simulation of advanced synaptic functions of the human brain by electrical devices could be an effective strategy towards constructing high-efficiency neuromorphic systems. Two-dimensional (2D) materials are promising candidates in fabrication of optoelectronic devices due to their excellent photoelectric performances. Herein, opto-electronic synapses based on layered MoS2/SnSe2 van der Waals heterojunction (vdWH) memtransistors have been investigated. It can be observed that the typical synaptic functions, such as excitatory/inhibitory postsynaptic current (EPSC/IPSC), long-term potentiation/depression (LTP/LTD), paired-pulse facilitation/depression (PPF/PPD), as well as the transition from short-term memory (STM) to long-term memory (LTM) are realized using both electrical and optical pulses as input signals. In addition, the time constant for PPF under optical pulses was 3.91 s, which was comparable with the response times of biological neural synapses. So the MoS2/SnSe2 memtransistor could work as an electronic synapse in future artificial neural networks, inspiring the implementation of 2D materials for neuromorphic computation.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"4 15","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141021221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-02DOI: 10.35848/1347-4065/ad46ad
Keisuke Watanabe, H. Nishinaka, Yuuya Nishioka, Kousuke Imai, K. Kanegae, M. Yoshimoto
Cu-based metal halides, such as Cs3Cu2I5, are promising materials for light-emitting diodes, photodetectors, and scintillators because of their excellent optical properties, nontoxicity, and high air stability. In this study, we demonstrated the deposition of high-coverage Cs3Cu2I5 thin films using solution-based mist deposition. By adjusting the substrate temperature appropriately, continuous Cs3Cu2I5 thin films were formed. The Cs3Cu2I5 thin films exhibited blue emission under ultraviolet irradiation, with a large Stokes shift of 1.40 eV. Furthermore, they exhibited a high photoluminescence quantum yield of over 80%.
{"title":"The deposition and the optical characteristics of Cu-based metal halide Cs3Cu2I5 thin film via mist deposition","authors":"Keisuke Watanabe, H. Nishinaka, Yuuya Nishioka, Kousuke Imai, K. Kanegae, M. Yoshimoto","doi":"10.35848/1347-4065/ad46ad","DOIUrl":"https://doi.org/10.35848/1347-4065/ad46ad","url":null,"abstract":"\u0000 Cu-based metal halides, such as Cs3Cu2I5, are promising materials for light-emitting diodes, photodetectors, and scintillators because of their excellent optical properties, nontoxicity, and high air stability. In this study, we demonstrated the deposition of high-coverage Cs3Cu2I5 thin films using solution-based mist deposition. By adjusting the substrate temperature appropriately, continuous Cs3Cu2I5 thin films were formed. The Cs3Cu2I5 thin films exhibited blue emission under ultraviolet irradiation, with a large Stokes shift of 1.40 eV. Furthermore, they exhibited a high photoluminescence quantum yield of over 80%.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"53 12","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141017681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-02DOI: 10.35848/1347-4065/ad46ac
Kazuhiro Mochizuki, Tomoaki Nishimura, T. Mishima
The El-Hoshy−Gibbons model, which reduces not only the atomic numbers of projectiles (Z1) and targets but also the impact parameter for small-angle collisions (R0) in the Firsov model, was modified based on the relation between R0 and the Kohn−Sham radii of projectiles (rKS); namely, the reduction factor y of R0 was chosen to be 10 when R0 was larger rKS and 5 in the case R0 ≤ rKS. This modification improved the reproducibility of the periodic dependences of the electronic stopping cross sections in Si, as well as those in SiC, for low-velocity ions with 5 ≤ Z1 ≤ 15.
{"title":"Modified El-Hoshy−Gibbons model for electronic stopping cross sections in Si and SiC for low-velocity ions with atomic numbers between 5 and 15","authors":"Kazuhiro Mochizuki, Tomoaki Nishimura, T. Mishima","doi":"10.35848/1347-4065/ad46ac","DOIUrl":"https://doi.org/10.35848/1347-4065/ad46ac","url":null,"abstract":"\u0000 The El-Hoshy−Gibbons model, which reduces not only the atomic numbers of projectiles (Z1) and targets but also the impact parameter for small-angle collisions (R0) in the Firsov model, was modified based on the relation between R0 and the Kohn−Sham radii of projectiles (rKS); namely, the reduction factor y of R0 was chosen to be 10 when R0 was larger rKS and 5 in the case R0 ≤ rKS. This modification improved the reproducibility of the periodic dependences of the electronic stopping cross sections in Si, as well as those in SiC, for low-velocity ions with 5 ≤ Z1 ≤ 15.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"64 S1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141017919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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