Pub Date : 2024-05-21DOI: 10.35848/1347-4065/ad4e7f
Hu Liu, Peifeng Li, Xiaoyu Zhou, Pengyu Wang, Yubin Li, Lei Pan, Wenting Zhang
This paper proposes a fin electron-hole bilayer tunneling field-effect transistor with a heterogate and an InAlAs barrier layer (HBF-EHBTFET). The heterogate can suppress off-state leakage caused by point tunneling, while the InAlAs barrier layer prevents source-drain direct tunneling, significantly reducing off-state current (Ioff). P-type Gaussian doping can not only solve the problem of inability to generate a hole layer during device fabrication, but also reduce the turn-on voltage of line-tunneling, ultimately increasing on-state current and reducing average subthreshold swing (SSavg). By optimizing parameters of the heterogate and InAlAs barrier layer, HBF-EHBTFET can obtain Ioff of 2.37×10-16 A/μm, SSavg of 17.97 mV/dec, cutoff frequency (fT) of 13.2 GHz, and gain bandwidth product (GBW) of 1.58 GHz. Compared with traditional EHBTFET, HBF-EHBTFET exhibits a reduction in Ioff by four orders of magnitude, a decrease in SSavg by 65.27%, and an increase in fT and GBW by 78.59 % and 93.62 %, respectively.
{"title":"An InGaAs-based Fin-EHBTFET with heterogate and barrier layer for high performance","authors":"Hu Liu, Peifeng Li, Xiaoyu Zhou, Pengyu Wang, Yubin Li, Lei Pan, Wenting Zhang","doi":"10.35848/1347-4065/ad4e7f","DOIUrl":"https://doi.org/10.35848/1347-4065/ad4e7f","url":null,"abstract":"\u0000 This paper proposes a fin electron-hole bilayer tunneling field-effect transistor with a heterogate and an InAlAs barrier layer (HBF-EHBTFET). The heterogate can suppress off-state leakage caused by point tunneling, while the InAlAs barrier layer prevents source-drain direct tunneling, significantly reducing off-state current (Ioff). P-type Gaussian doping can not only solve the problem of inability to generate a hole layer during device fabrication, but also reduce the turn-on voltage of line-tunneling, ultimately increasing on-state current and reducing average subthreshold swing (SSavg). By optimizing parameters of the heterogate and InAlAs barrier layer, HBF-EHBTFET can obtain Ioff of 2.37×10-16 A/μm, SSavg of 17.97 mV/dec, cutoff frequency (fT) of 13.2 GHz, and gain bandwidth product (GBW) of 1.58 GHz. Compared with traditional EHBTFET, HBF-EHBTFET exhibits a reduction in Ioff by four orders of magnitude, a decrease in SSavg by 65.27%, and an increase in fT and GBW by 78.59 % and 93.62 %, respectively.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"109 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141116008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The electrical device fabricated by the Si-on-SiC substrate exhibits superior heat dissipation and minimal RF loss. However, a common challenge in hydrophilic direct bonding is the inevitable formation of bubbles at the Si/SiC interface, which compromises material utilization efficiency. To address this issue, a multi-bonding process was introduced in this research. Experimental findings revealed that this method effectively mitigated interfacial bubble formation, especially when incorporating a multi-step annealing-separating-bonding approach, yielding even more promising results. Ultimately, a bubble-free 3×3 cm2 Si-on-SiC substrate was fabricated. Material characterization techniques confirmed the high crystal quality and minimal surface roughness for the Si functional layer. Transmission electron microscopy further revealed the presence of an amorphous oxide layer (~3.5 nm) at the interface, devoid of any defects or nanovoids. It is believed that with the excellent physical properties, Si-on-SiC will have a broader application prospect in extreme environments.
{"title":"Research on bubble free Si/SiC hydrophilic bonding approach for high quality Si-on-SiC fabrication","authors":"Dingcheng Gao, Yu Liu, Yuan Gao, Yun Liu, Yongwei Chang, Z. Xue, Xing Wei","doi":"10.35848/1347-4065/ad4e80","DOIUrl":"https://doi.org/10.35848/1347-4065/ad4e80","url":null,"abstract":"\u0000 The electrical device fabricated by the Si-on-SiC substrate exhibits superior heat dissipation and minimal RF loss. However, a common challenge in hydrophilic direct bonding is the inevitable formation of bubbles at the Si/SiC interface, which compromises material utilization efficiency. To address this issue, a multi-bonding process was introduced in this research. Experimental findings revealed that this method effectively mitigated interfacial bubble formation, especially when incorporating a multi-step annealing-separating-bonding approach, yielding even more promising results. Ultimately, a bubble-free 3×3 cm2 Si-on-SiC substrate was fabricated. Material characterization techniques confirmed the high crystal quality and minimal surface roughness for the Si functional layer. Transmission electron microscopy further revealed the presence of an amorphous oxide layer (~3.5 nm) at the interface, devoid of any defects or nanovoids. It is believed that with the excellent physical properties, Si-on-SiC will have a broader application prospect in extreme environments.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"8 10","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141117159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-21DOI: 10.35848/1347-4065/ad4e81
Yusuke Endo, Kensei Ichiba, D. Nakauchi, Takumi Kato, N. Kawaguchi, Takayuki Yanagida
Photoluminescence and scintillation properties of Tm:CaHfO3 single crystals were investigated. From the results of photoluminescence properties, all the Tm:CaHfO3 samples showed emission bands due to the 4f–4f transitions of Tm3+, and the 1.0% Tm:CaHfO3 sample showed the highest quantum yield among all the samples upon excitation at 360 nm. The afterglow levels at 20 ms after X-ray irradiation for 2 ms were approximately 12,000 ppm. Pulse height spectra using 137Cs as γ-ray source revealed the 1.0% Tm:CaHfO3 sample showed the highest light yield of 1,250 photons/MeV among all the samples.
{"title":"Development of Tm-doped CaHfO3 single-crystal-scintillators for application to integrated-type detectors","authors":"Yusuke Endo, Kensei Ichiba, D. Nakauchi, Takumi Kato, N. Kawaguchi, Takayuki Yanagida","doi":"10.35848/1347-4065/ad4e81","DOIUrl":"https://doi.org/10.35848/1347-4065/ad4e81","url":null,"abstract":"\u0000 Photoluminescence and scintillation properties of Tm:CaHfO3 single crystals were investigated. From the results of photoluminescence properties, all the Tm:CaHfO3 samples showed emission bands due to the 4f–4f transitions of Tm3+, and the 1.0% Tm:CaHfO3 sample showed the highest quantum yield among all the samples upon excitation at 360 nm. The afterglow levels at 20 ms after X-ray irradiation for 2 ms were approximately 12,000 ppm. Pulse height spectra using 137Cs as γ-ray source revealed the 1.0% Tm:CaHfO3 sample showed the highest light yield of 1,250 photons/MeV among all the samples.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"24 9","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141117551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-16DOI: 10.35848/1347-4065/ad4cc9
Masataka Katsuumi, Tetsuya Akasaka
GaN films were grown on sapphire substrates using liquid phase epitaxy under an atmospheric pressure nitrogen ambience, employing molten Ga and Fe3N as a source mixture. Single-crystal GaN (0001) films were successfully grown on sapphire (0001) substrates within a growth temperature (Tg) range of 750 to 900 oC. When varying the Fe3N concentration in the range of 0.05 to 3 mol%, lower iron nitride resulted in high crystallinity of GaN (0001) films. The incorporation of iron atoms in GaN can negatively impact crystal quality. Parameterizing Tg at a concentration of 0.1 mol% Fe3N showed that a reduction in the peak width of GaN (0002) X-ray rocking curves. However, at 3 mol%, elevating Tg resulted in the degradation of the crystallinity of GaN. This degradation may be attributed to the increased solubility of iron atoms in GaN with increasing Tg.
{"title":"Liquid phase epitaxy of GaN films on sapphire substrates under an atmospheric pressure nitrogen ambience","authors":"Masataka Katsuumi, Tetsuya Akasaka","doi":"10.35848/1347-4065/ad4cc9","DOIUrl":"https://doi.org/10.35848/1347-4065/ad4cc9","url":null,"abstract":"\u0000 GaN films were grown on sapphire substrates using liquid phase epitaxy under an atmospheric pressure nitrogen ambience, employing molten Ga and Fe3N as a source mixture. Single-crystal GaN (0001) films were successfully grown on sapphire (0001) substrates within a growth temperature (Tg) range of 750 to 900 oC. When varying the Fe3N concentration in the range of 0.05 to 3 mol%, lower iron nitride resulted in high crystallinity of GaN (0001) films. The incorporation of iron atoms in GaN can negatively impact crystal quality. Parameterizing Tg at a concentration of 0.1 mol% Fe3N showed that a reduction in the peak width of GaN (0002) X-ray rocking curves. However, at 3 mol%, elevating Tg resulted in the degradation of the crystallinity of GaN. This degradation may be attributed to the increased solubility of iron atoms in GaN with increasing Tg.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"24 16","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140971821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-16DOI: 10.35848/1347-4065/ad4cca
Kaito Kobayashi, H. Shimada, Y. Mizugaki
We fabricated a random network of gold nanoparticles (RN-GNPs) over 12 NiCr/Au electrodes by using a multi-step immersion method, where a sample was immersed in a gold colloid solution three times. Nonlinear current-voltage characteristics due to the Coulomb blockade were observed at 77 K. For demonstration of physical reservoir applications, input-output characteristics of the RN-GNPs were also measured in a one-input, nine-output terminal configuration. Distorted output voltage waveforms were obtained for a sinusoidal voltage input of 100 Hz. The higher-order harmonic components were confirmed in the frequency spectra of the outputs. The waveform reconstruction task and short-term storage capacity estimation were performed by an echo state network model with ridge regression and linear regression, respectively.
{"title":"Physical reservoir application of random network of gold nanoparticles fabricated by multi-step immersion in gold colloidal solution","authors":"Kaito Kobayashi, H. Shimada, Y. Mizugaki","doi":"10.35848/1347-4065/ad4cca","DOIUrl":"https://doi.org/10.35848/1347-4065/ad4cca","url":null,"abstract":"\u0000 We fabricated a random network of gold nanoparticles (RN-GNPs) over 12 NiCr/Au electrodes by using a multi-step immersion method, where a sample was immersed in a gold colloid solution three times. Nonlinear current-voltage characteristics due to the Coulomb blockade were observed at 77 K. For demonstration of physical reservoir applications, input-output characteristics of the RN-GNPs were also measured in a one-input, nine-output terminal configuration. Distorted output voltage waveforms were obtained for a sinusoidal voltage input of 100 Hz. The higher-order harmonic components were confirmed in the frequency spectra of the outputs. The waveform reconstruction task and short-term storage capacity estimation were performed by an echo state network model with ridge regression and linear regression, respectively.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"29 8","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140969612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-16DOI: 10.35848/1347-4065/ad4ccb
Jung Min Park, Masanori Okuyama
Polycrystalline BiFeO3 (BFO) films were prepared on Pt / TiO2 / SiO2 / Si substate by using magnetic-field-assisted 90° off-axis pulsed laser deposition (PLD). We have successfully obtained polycrystalline BFO films owing to a high deposition rate derived by a confinement of the plume under a magnetic field. The obtained polycrystalline BFO films have a droplet-free surface morphology and a columnar-like microstructure. A room-temperature ferroelectric hysteresis loop is obtained, and at same time, the remanent polarization of 90 μC/cm2 and the reduced coercive field of 178 kV/cm are confirmed. Also, an evolution of the polarization switching is observed by the piezoresponse force microscopy. In this study, we provide a possible route to realize the polycrystalline film growth which has a good quality in 90° off-axis deposition system by using magnetic-field-assisted PLD.
{"title":"Characterization of polycrystalline BiFeO3 films prepared by magnetic-field-assisted 90° off-axis pulsed laser deposition","authors":"Jung Min Park, Masanori Okuyama","doi":"10.35848/1347-4065/ad4ccb","DOIUrl":"https://doi.org/10.35848/1347-4065/ad4ccb","url":null,"abstract":"\u0000 Polycrystalline BiFeO3 (BFO) films were prepared on Pt / TiO2 / SiO2 / Si substate by using magnetic-field-assisted 90° off-axis pulsed laser deposition (PLD). We have successfully obtained polycrystalline BFO films owing to a high deposition rate derived by a confinement of the plume under a magnetic field. The obtained polycrystalline BFO films have a droplet-free surface morphology and a columnar-like microstructure. A room-temperature ferroelectric hysteresis loop is obtained, and at same time, the remanent polarization of 90 μC/cm2 and the reduced coercive field of 178 kV/cm are confirmed. Also, an evolution of the polarization switching is observed by the piezoresponse force microscopy. In this study, we provide a possible route to realize the polycrystalline film growth which has a good quality in 90° off-axis deposition system by using magnetic-field-assisted PLD.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"14 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140967728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-15DOI: 10.35848/1347-4065/ad4c43
Ryosuke Noro, Masahide Okazaki, M. Uemukai, T. Tanikawa, R. Katayama
Watt-class UV laser lights with symmetric spatial modes are suitable for high-resolution industrial applications. Channel waveguides with a guided mode of several ten microns diameter in MgO:LiTaO3 enhance integration capability while avoiding photorefractive damages during high-power wavelength conversion. We focused on buried waveguides fabricated by proton exchange, surface activated bonding (SAB) and proton diffusion processes in periodically-poled (PP) MgO:LiTaO3. In this work, the mode profiles were simulated using the proton diffusion coefficients estimated by secondary ion mass spectrometry. Using the simulation results, the buried waveguides with a mode diameter of larger than 30 μm were fabricated. By adopting designed PP structures, second harmonic generation (SHG) devices at a wavelength of 532 nm were fabricated. The nonlinear coupling coefficient was estimated to be 0.15 W−1/2 cm−1. Compared to the conventional annealed proton-exchanged waveguide SHG device without SAB, symmetric guided modes were obtained while maintaining the nonlinear coupling coefficient.
{"title":"Buried annealed proton-exchanged waveguide in periodically-poled MgO:LiTaO3 fabricated by surface activated bonding for high-power wavelength conversion","authors":"Ryosuke Noro, Masahide Okazaki, M. Uemukai, T. Tanikawa, R. Katayama","doi":"10.35848/1347-4065/ad4c43","DOIUrl":"https://doi.org/10.35848/1347-4065/ad4c43","url":null,"abstract":"\u0000 Watt-class UV laser lights with symmetric spatial modes are suitable for high-resolution industrial applications. Channel waveguides with a guided mode of several ten microns diameter in MgO:LiTaO3 enhance integration capability while avoiding photorefractive damages during high-power wavelength conversion. We focused on buried waveguides fabricated by proton exchange, surface activated bonding (SAB) and proton diffusion processes in periodically-poled (PP) MgO:LiTaO3. In this work, the mode profiles were simulated using the proton diffusion coefficients estimated by secondary ion mass spectrometry. Using the simulation results, the buried waveguides with a mode diameter of larger than 30 μm were fabricated. By adopting designed PP structures, second harmonic generation (SHG) devices at a wavelength of 532 nm were fabricated. The nonlinear coupling coefficient was estimated to be 0.15 W−1/2 cm−1. Compared to the conventional annealed proton-exchanged waveguide SHG device without SAB, symmetric guided modes were obtained while maintaining the nonlinear coupling coefficient.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"13 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140976212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-15DOI: 10.35848/1347-4065/ad4bf0
Wei Wang, Ming Zeng, Chao Tian, Hongbo Sun, Kai Cui, Guilei Wang, Chao Zhao
Recently, amorphous indium gallium zinc oxide (a-IGZO) is studied in the field of 3D transistor as a channel material for the high mobility, good uniformity and low leakage current performance. CMP process need be applied to fully remove surface IGZO in multilayer film stack structure and achieve the purpose of planarization. As we all know, the CMP characteristics of desired removal rate with stability and within-wafer non-uniformity (WIWNU%) play an important role in CMP process. In this paper, the variation of the removal rate and the non-uniformity for IGZO thin film were studied with various process parameters (such as polishing time, slurry flow rate, slurry dilution, head pressure, head and table speed).The results mean that the removal rate and the non-uniformity of IGZO thin film can be tuned by changing process parameters, which can enhance the confidence about the feasibility of IGZO-CMP in the application of advanced technology.
{"title":"CMP characteristics of IGZO thin film with a variety of process parameters","authors":"Wei Wang, Ming Zeng, Chao Tian, Hongbo Sun, Kai Cui, Guilei Wang, Chao Zhao","doi":"10.35848/1347-4065/ad4bf0","DOIUrl":"https://doi.org/10.35848/1347-4065/ad4bf0","url":null,"abstract":"\u0000 Recently, amorphous indium gallium zinc oxide (a-IGZO) is studied in the field of 3D transistor as a channel material for the high mobility, good uniformity and low leakage current performance. CMP process need be applied to fully remove surface IGZO in multilayer film stack structure and achieve the purpose of planarization. As we all know, the CMP characteristics of desired removal rate with stability and within-wafer non-uniformity (WIWNU%) play an important role in CMP process. In this paper, the variation of the removal rate and the non-uniformity for IGZO thin film were studied with various process parameters (such as polishing time, slurry flow rate, slurry dilution, head pressure, head and table speed).The results mean that the removal rate and the non-uniformity of IGZO thin film can be tuned by changing process parameters, which can enhance the confidence about the feasibility of IGZO-CMP in the application of advanced technology.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"134 49","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140977189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-14DOI: 10.35848/1347-4065/ad4b7f
Michio Tajima, Shuichi Samata, S. Nakagawa, Hiroki Ishigaki, Noriyuki Ishihara
We have extended the applicability of the photoluminescence method after electron irradiation for quantifying low-level C impurities in Si crystals. The intensity ratio of the G-line to the intrinsic emission normalized by the ratio of the reference sample is used as an index of the C concentration. The calibration curves have already been established for Czochralski-grown crystals with resistivity higher than 50 Ω·cm (n-type) and higher than 5 kΩ·cm (p-type). We showed that the method was extendable to the resistivity range down to 30 Ω·cm in n-type samples with the O concentration in the range 1-6×1017 cm-3. The extension to float-zone (FZ) crystals was realized by using the theoretical relationship between the C concentration and the G-line intensity ratio normalized by the ratio of the FZ reference sample. Regarding the extension to conductive p-type B-doped samples, the formation of B-related radiation-induced defects was found to be an obstacle.
我们扩展了电子辐照后光致发光方法的适用范围，用于量化硅晶体中的低浓度 C 杂质。G 线与本征发射的强度比以参比样品的比值归一化后作为 C 浓度的指标。对于电阻率高于 50 Ω-cm（n 型）和高于 5 kΩ-cm（p 型）的 Czochralski 生长晶体，已经建立了校准曲线。我们的研究表明，在 O 浓度为 1-6×1017 cm-3 的 n 型样品中，该方法的电阻率范围可扩展至 30 Ω-cm。通过使用 C 浓度与 G 线强度比之间的理论关系，并以 FZ 参考样品的比率归一化，实现了对浮区（FZ）晶体的扩展。关于向导电 p 型掺 B 样品的扩展，发现与 B 有关的辐射诱导缺陷的形成是一个障碍。
{"title":"Extension of the scope of the photoluminescence method after electron irradiation for quantifying low-level carbon in silicon","authors":"Michio Tajima, Shuichi Samata, S. Nakagawa, Hiroki Ishigaki, Noriyuki Ishihara","doi":"10.35848/1347-4065/ad4b7f","DOIUrl":"https://doi.org/10.35848/1347-4065/ad4b7f","url":null,"abstract":"\u0000 We have extended the applicability of the photoluminescence method after electron irradiation for quantifying low-level C impurities in Si crystals. The intensity ratio of the G-line to the intrinsic emission normalized by the ratio of the reference sample is used as an index of the C concentration. The calibration curves have already been established for Czochralski-grown crystals with resistivity higher than 50 Ω·cm (n-type) and higher than 5 kΩ·cm (p-type). We showed that the method was extendable to the resistivity range down to 30 Ω·cm in n-type samples with the O concentration in the range 1-6×1017 cm-3. The extension to float-zone (FZ) crystals was realized by using the theoretical relationship between the C concentration and the G-line intensity ratio normalized by the ratio of the FZ reference sample. Regarding the extension to conductive p-type B-doped samples, the formation of B-related radiation-induced defects was found to be an obstacle.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"103 16","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140978182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-13DOI: 10.35848/1347-4065/ad4ad8
Nobutaka Shioya, Taizo Mori, K. Ariga, Takeshi Hasegawa
The cutting-edge thin film studies using the multiple-angle incidence resolution spectrometry (MAIRS) are introduced from the principle to forefront applications in a wide variety of research fields covering semiconductor material with respect to nanoarchitectonics. MAIRS basically reveals quantitatively optical anisotropy in thin films, which is mostly used for quantitative molecular orientation analysis of each chemical group for chemistry purposes. This works powerfully especially when the material has poor crystallinity that cannot be analyzed by X-ray diffraction analysis. As a matter of fact, MAIRS works as a role that compensates for the diffraction techniques, and the combination of MAIRS and the diffraction techniques has already established as the most powerful technique not to miss the molecular aggregation structure in thin films. In this review, in addition, another application for physics purposes is also introduced where phonon in thin films is discriminated from normal infrared absorption bands by using the MAIRS technique.
本书介绍了利用多角入射分辨光谱仪（MAIRS）进行的尖端薄膜研究，从原理到前沿应用，涉及纳米结构半导体材料等多个研究领域。多入射分辨光谱法基本上能定量揭示薄膜中的光学各向异性，主要用于对化学目的中每个化学基团的分子取向进行定量分析。尤其是当材料的结晶度较低，无法用 X 射线衍射分析法进行分析时，这种方法就更有效了。事实上，MAIRS 起到了弥补衍射技术的作用，而且 MAIRS 和衍射技术的结合已经成为不遗漏薄膜中分子聚集结构的最强大技术。此外，本综述还介绍了另一项物理学应用，即利用 MAIRS 技术将薄膜中的声子与普通红外吸收带区分开来。
{"title":"Multiple-angle incidence resolution spectrometry (MAIRS): applications in nanoarchitectonics and applied physics","authors":"Nobutaka Shioya, Taizo Mori, K. Ariga, Takeshi Hasegawa","doi":"10.35848/1347-4065/ad4ad8","DOIUrl":"https://doi.org/10.35848/1347-4065/ad4ad8","url":null,"abstract":"\u0000 The cutting-edge thin film studies using the multiple-angle incidence resolution spectrometry (MAIRS) are introduced from the principle to forefront applications in a wide variety of research fields covering semiconductor material with respect to nanoarchitectonics. MAIRS basically reveals quantitatively optical anisotropy in thin films, which is mostly used for quantitative molecular orientation analysis of each chemical group for chemistry purposes. This works powerfully especially when the material has poor crystallinity that cannot be analyzed by X-ray diffraction analysis. As a matter of fact, MAIRS works as a role that compensates for the diffraction techniques, and the combination of MAIRS and the diffraction techniques has already established as the most powerful technique not to miss the molecular aggregation structure in thin films. In this review, in addition, another application for physics purposes is also introduced where phonon in thin films is discriminated from normal infrared absorption bands by using the MAIRS technique.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"8 10","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140983172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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