Pub Date : 2024-08-28DOI: 10.1109/TEMC.2024.3440919
Takuya Wadatsumi;Kazuki Monta;Yusuke Hayashi;Takuji Miki;Alkis A. Hatzopoulos;Adrijan Barić;Makoto Nagata
The backside of integrated circuits (ICs) in flip-chip assembly is susceptible to intentional electromagnetic interference due to its open surface. In this article, we propose a model in which conducted current noise from a localized area of the Si substrate on the chip-backside causes errors in complementary metal-oxide-semiconductor (CMOS) digital circuits. This model explains for the first time the mechanism of bit-flip errors in bistable circuits caused by high-voltage pulse (HVP) injection on the backside of the IC. The injected current from the backside of the IC not only flows into the power distribution network, but also charges the gate capacitance of the next stage via p–n junction diodes of body/drain or body/source in N-channel mosfet s (NMOS) with twin-well structures, resulting in bit-flip errors. In this study, circuit simulations were performed using a three-dimensional RC network model of the IC chip and an HVP injector. These simulations have shown that the P-well voltage is biased depending on the arrangement of the tap cells, reproducing bit-flip errors in the bistable circuit of a D flip-flop. The simulation results were validated on a fabricated prototype IC chip, which confirmed the trend of data dependency for errors related to the physical layout.
在倒装芯片组装过程中，集成电路（IC）的背面由于是开放表面，很容易受到有意的电磁干扰。在本文中，我们提出了一个模型，在这个模型中，来自芯片背面硅衬底局部区域的传导电流噪声会导致互补金属氧化物半导体（CMOS）数字电路出现误差。该模型首次解释了集成电路背面高压脉冲（HVP）注入导致双稳态电路位翻转错误的机理。从集成电路背面注入的电流不仅会流入配电网络，还会通过双阱结构 N 沟道晶体管（NMOS）中的体/漏极或体/源极 p-n 结二极管对下一阶段的栅极电容充电，从而导致位翻转错误。在这项研究中，使用集成电路芯片的三维 RC 网络模型和 HVP 注入器进行了电路仿真。模拟结果表明，P-阱电压偏置取决于分接单元的排列，从而在 D 型触发器的双稳态电路中再现了位翻转错误。仿真结果在制造的集成电路原型芯片上进行了验证，证实了与物理布局相关的误差的数据依赖趋势。
{"title":"Chip-Backside Vulnerability to Intentional Electromagnetic Interference in Integrated Circuits","authors":"Takuya Wadatsumi;Kazuki Monta;Yusuke Hayashi;Takuji Miki;Alkis A. Hatzopoulos;Adrijan Barić;Makoto Nagata","doi":"10.1109/TEMC.2024.3440919","DOIUrl":"10.1109/TEMC.2024.3440919","url":null,"abstract":"The backside of integrated circuits (ICs) in flip-chip assembly is susceptible to intentional electromagnetic interference due to its open surface. In this article, we propose a model in which conducted current noise from a localized area of the Si substrate on the chip-backside causes errors in complementary metal-oxide-semiconductor (CMOS) digital circuits. This model explains for the first time the mechanism of bit-flip errors in bistable circuits caused by high-voltage pulse (HVP) injection on the backside of the IC. The injected current from the backside of the IC not only flows into the power distribution network, but also charges the gate capacitance of the next stage via p–n junction diodes of body/drain or body/source in N-channel \u0000<sc>mosfet</small>\u0000s (NMOS) with twin-well structures, resulting in bit-flip errors. In this study, circuit simulations were performed using a three-dimensional \u0000<italic>RC</i>\u0000 network model of the IC chip and an HVP injector. These simulations have shown that the P-well voltage is biased depending on the arrangement of the tap cells, reproducing bit-flip errors in the bistable circuit of a D flip-flop. The simulation results were validated on a fabricated prototype IC chip, which confirmed the trend of data dependency for errors related to the physical layout.","PeriodicalId":55012,"journal":{"name":"IEEE Transactions on Electromagnetic Compatibility","volume":"66 5","pages":"1556-1566"},"PeriodicalIF":2.0,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10654642","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142090377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-26DOI: 10.1109/TEMC.2024.3445292
Kanishka Katoch;Naveen Jaglan;Binod Kumar Kanaujia;Pai-Yen Chen;Ahmed A. Kishk
The design of a miniaturized triple bandstop frequency selective surface (FSS) is presented for 5th generation (5G) communication systems. Meander lines in a spiral shape have been etched on the top and bottom of a dielectric substrate. To increase the electrical length of the FSS, the spirals are interconnected using four vias at the edges. The proposed design with a 5.2 × 5.2 mm 2 footprint exhibits a triple bandstop response at sub-6 GHz frequency bands NR n46, LTE 42/LTE43, and LTE 46. The design is simple and cost-effective. As a miniaturized structure with rotational symmetry, it manifests polarization-independent characteristics with a stable frequency response for normal and oblique incident angles up to 84° (simulated) and 60° (measured). The transmission characteristics are verified using simulation and experiments. The proposed design can be used to shield 5G operational devices.
{"title":"Triple Bandstop 2.5D Frequency Selective Surface for Sub-6 GHz 5G Communication","authors":"Kanishka Katoch;Naveen Jaglan;Binod Kumar Kanaujia;Pai-Yen Chen;Ahmed A. Kishk","doi":"10.1109/TEMC.2024.3445292","DOIUrl":"10.1109/TEMC.2024.3445292","url":null,"abstract":"The design of a miniaturized triple bandstop frequency selective surface (FSS) is presented for 5th generation (5G) communication systems. Meander lines in a spiral shape have been etched on the top and bottom of a dielectric substrate. To increase the electrical length of the FSS, the spirals are interconnected using four vias at the edges. The proposed design with a 5.2 × 5.2 mm\u0000<sup>2</sup>\u0000 footprint exhibits a triple bandstop response at sub-6 GHz frequency bands NR n46, LTE 42/LTE43, and LTE 46. The design is simple and cost-effective. As a miniaturized structure with rotational symmetry, it manifests polarization-independent characteristics with a stable frequency response for normal and oblique incident angles up to 84° (simulated) and 60° (measured). The transmission characteristics are verified using simulation and experiments. The proposed design can be used to shield 5G operational devices.","PeriodicalId":55012,"journal":{"name":"IEEE Transactions on Electromagnetic Compatibility","volume":"66 5","pages":"1420-1429"},"PeriodicalIF":2.0,"publicationDate":"2024-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142084860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-26DOI: 10.1109/TEMC.2024.3423006
Shao-Yin He;Yu Song;Andrea Cozza;Yan-Zhao Xie;Zhao-Yang Wang
This article introduces a novel fault location method utilizing polynomial-chaos expansion (PCE) designed specifically for non-uniform transmission lines affected by uncertain parameters. It considers the uncertain parameters arising from height and ground conductivity in transmission lines, examining their impact on conventional fault location methods, such as natural frequency and full-transient analysis approach. These uncertainties lead to considerable location errors, particularly magnified with increasing fault distances. To address this issue, we propose a fault location approach based on PCE and correlation estimation. Simulations cover fault distances ranging from tens to hundreds of kilometers, considering variations in non-uniform line section-lengths, and examining scenarios with single and multiple conductors. Results demonstrate that the proposed method exhibits robustness across different degrees of uncertainty parameters in non-uniform settings, reducing the relative location error to below 1%. In terms of computational efficiency, the PCE method can accelerate calculations by up to 12 times compared to the Monte Carlo method. Furthermore, the PCE method has been validated using fault transient data from an actual 220 kV power line achieving a location error of 2.41%, which demonstrates its practical applicability in real-world power grid scenarios.
{"title":"A Fault Location Method Based on Polynomial Chaos Expansion for Non-uniform Power Transmission Lines With Uncertainty Parameters","authors":"Shao-Yin He;Yu Song;Andrea Cozza;Yan-Zhao Xie;Zhao-Yang Wang","doi":"10.1109/TEMC.2024.3423006","DOIUrl":"10.1109/TEMC.2024.3423006","url":null,"abstract":"This article introduces a novel fault location method utilizing polynomial-chaos expansion (PCE) designed specifically for non-uniform transmission lines affected by uncertain parameters. It considers the uncertain parameters arising from height and ground conductivity in transmission lines, examining their impact on conventional fault location methods, such as natural frequency and full-transient analysis approach. These uncertainties lead to considerable location errors, particularly magnified with increasing fault distances. To address this issue, we propose a fault location approach based on PCE and correlation estimation. Simulations cover fault distances ranging from tens to hundreds of kilometers, considering variations in non-uniform line section-lengths, and examining scenarios with single and multiple conductors. Results demonstrate that the proposed method exhibits robustness across different degrees of uncertainty parameters in non-uniform settings, reducing the relative location error to below 1%. In terms of computational efficiency, the PCE method can accelerate calculations by up to 12 times compared to the Monte Carlo method. Furthermore, the PCE method has been validated using fault transient data from an actual 220 kV power line achieving a location error of 2.41%, which demonstrates its practical applicability in real-world power grid scenarios.","PeriodicalId":55012,"journal":{"name":"IEEE Transactions on Electromagnetic Compatibility","volume":"66 5","pages":"1665-1678"},"PeriodicalIF":2.0,"publicationDate":"2024-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142084890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This article theoretically investigates the shielding problem of a double-layered planar shield of infinite extent against the magnetic field generated by a circular loop placed parallel to the shield. First, Moser's formulation of solving the vector wave equation is extended to obtain the exact integral expressions of the shielded fields. Second, the approximate expressions are developed for electrically thick, nonmagnetic, metallic sheets. Also, the conditions to validate the approximate expressions are illimulated. Finally, the calculated results for the aluminum, the low-carbon steel and the permalloy are presented according to the NSA 94-106 setup. Meanwhile, the effects of thickness distribution and sheet-to-sheet spacing are analyzed.
{"title":"Low-Frequency Magnetic Shielding of a Double-Layered Planar Shield Against a Parallel Loop","authors":"Yiyi Jing;Sijia Liu;Jiahua Mei;Haidong Liu;Chongqing Jiao","doi":"10.1109/TEMC.2024.3436551","DOIUrl":"10.1109/TEMC.2024.3436551","url":null,"abstract":"This article theoretically investigates the shielding problem of a double-layered planar shield of infinite extent against the magnetic field generated by a circular loop placed parallel to the shield. First, Moser's formulation of solving the vector wave equation is extended to obtain the exact integral expressions of the shielded fields. Second, the approximate expressions are developed for electrically thick, nonmagnetic, metallic sheets. Also, the conditions to validate the approximate expressions are illimulated. Finally, the calculated results for the aluminum, the low-carbon steel and the permalloy are presented according to the NSA 94-106 setup. Meanwhile, the effects of thickness distribution and sheet-to-sheet spacing are analyzed.","PeriodicalId":55012,"journal":{"name":"IEEE Transactions on Electromagnetic Compatibility","volume":"66 5","pages":"1430-1439"},"PeriodicalIF":2.0,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142045367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-23DOI: 10.1109/TEMC.2024.3437434
Yaoyao Li;Youwei Meng;Hao Chen;Houpu Xiao;Shaoxiong Cai
The trend toward integration in systems has led to the unpredictability of electromagnetic compatibility within the system. Fixed radiation emission standards struggle to meet the diverse and complex requirements of specific scenarios, making it essential to design or adjust emission limits for specific equipment. To address this issue, this article investigates a method for tailoring the emission limits standard RE102 of radiation equipment in complex systems that include multiple radiating and sensitive equipment. We establish a radiation coupling network model within the system and propose a solution based on the affine-scaling interior-point method for solving the emission limit indicators. This method abstracts the problem of tailoring radiation emission limits into a single-objective optimization problem. We establish a design cost calculation model for each piece of radiation equipment, with the total system design cost as the optimization objective, to obtain the optimal solution under constraints. Finally, through case design and testing involving multiple radiating equipment and sensitive equipment, the test results demonstrate the effectiveness and reliability of the proposed novel method in different scenarios.
{"title":"A Novel Method for Tailoring the Electromagnetic Radiation Emission Limits of Equipment in Complex System","authors":"Yaoyao Li;Youwei Meng;Hao Chen;Houpu Xiao;Shaoxiong Cai","doi":"10.1109/TEMC.2024.3437434","DOIUrl":"10.1109/TEMC.2024.3437434","url":null,"abstract":"The trend toward integration in systems has led to the unpredictability of electromagnetic compatibility within the system. Fixed radiation emission standards struggle to meet the diverse and complex requirements of specific scenarios, making it essential to design or adjust emission limits for specific equipment. To address this issue, this article investigates a method for tailoring the emission limits standard RE102 of radiation equipment in complex systems that include multiple radiating and sensitive equipment. We establish a radiation coupling network model within the system and propose a solution based on the affine-scaling interior-point method for solving the emission limit indicators. This method abstracts the problem of tailoring radiation emission limits into a single-objective optimization problem. We establish a design cost calculation model for each piece of radiation equipment, with the total system design cost as the optimization objective, to obtain the optimal solution under constraints. Finally, through case design and testing involving multiple radiating equipment and sensitive equipment, the test results demonstrate the effectiveness and reliability of the proposed novel method in different scenarios.","PeriodicalId":55012,"journal":{"name":"IEEE Transactions on Electromagnetic Compatibility","volume":"66 5","pages":"1478-1489"},"PeriodicalIF":2.0,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142045503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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