ACS Applied Materials & Interfaces最新文献

For Zn metal batteries, the Zn anode faces several challenges, including Zn dendrites, hydrogen evolution, and corrosion. These issues are closely related to the Zn deposition process at the electrode/electrolyte interface. Herein, we propose interfacial engineering to protect the Zn anode and induce homogeneous deposition using conjugated cyclized polyacrylonitrile (cPAN) polymer nanofibers. It works as a hydrophobic protective layer that inhibits contact with H₂O molecules, thus reducing side reactions and enhancing the anticorrosion property. Also, with abundant zincophilic sites on cPAN nanofibers via coordination chemistry, Zn²⁺ ion transport is promoted and homogeneous dendrite-free Zn deposition is obtained. As a result, the cPAN-coated Zn (cPAN@Zn) anode demonstrates high coulombic efficiency of over 99.9%, high cycling stability of over 2000 h at 1 mA cm^-2, long cycling of over 16 000 cycles at 10 mA cm^-2, and excellent kinetics with a low overpotential below 0.15 V at 50 mA cm^-2. This work provides novel insights into organic interfacial engineering via conjugated polymers in aqueous rechargeable Zn energy storage systems.

Sulfur dioxide (SO₂), a pervasive air pollutant, poses significant environmental and health risks, necessitating advanced materials for its efficient capture. Nanoporous organic polymers (NOPs) have emerged as promising candidates; however, their development is often hindered by high synthesis temperatures, complex precursors, and limited SO₂ selectivity. Herein, we report a room-temperature, cost-effective synthesis of carbazole-based nanoporous organic polymers (CNOPs) using 1,3,5-trioxane and paraldehyde, offering a significant advancement over traditional Friedel-Crafts alkylation methods. The resulting CNOPs exhibit a high surface area of up to 842 m²·g^-1 and feature ultramicroporous structures optimized for SO₂ adsorption. At 298 K and 1 bar, the CNOPs demonstrated SO₂ adsorption capacities of up to 9.39 mmol·g^-1. Ideal adsorbed solution theory (IAST) calculations revealed outstanding selectivities of 105 for SO₂/CO₂ and 6139 for SO₂/N₂ mixtures, supported by breakthrough experiments demonstrating superior separation performance. This work not only provides a straightforward synthetic route for CNOPs but also offers valuable insights into the design and development of porous materials tailored for enhanced SO₂ capture, addressing critical environmental and health challenges.

Multivalued logic (MVL) systems, in which data are processed with more than two logic values, are considered a viable solution for achieving superior processing efficiency with higher data density and less complicated system complexity without further scaling challenges. Such MVL systems have been conceptually realized by using negative transconductance (NTC) devices whose channels consist of van der Waals (vdW) heterojunctions of low-dimensional semiconductors; however, their circuit operations have not been quite ideal for driving multiple stages in real circuit applications due to reasons such as a reduced output swing and poorly defined logic states. Herein, we demonstrate ternary inverter circuits with near rail-to-rail swing and three distinct logic states by employing vdW p-n heterojunctions of single-walled carbon nanotubes (SWCNT) and MoS₂ where the SWCNT layer completely covers the MoS₂ layer. In particular, SWCNTs are inkjet printed to form heterojunctions with MoS₂ grown by chemical vapor deposition (CVD), and both inkjet printing and CVD are fully scalable device fabrication methods for low-dimensional materials. In addition, the NTC characteristics of heterojunction field-effect transistors (H-FETs) are explained based on the electrical characteristics of individual SWCNT and MoS₂ channels. By adjustment of the p-channel characteristics in H-FETs by exploiting the advantages of the inkjet printing technology, the widths of the NTC regions are easily adjusted accordingly. The extended NTC region enables stable middle logic state operations of low-dimensional semiconductors-based ternary inverters over a sufficiently wide input voltage range.