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Rational Design and Optimization of the Band Gap and p-Type Doping in High-Efficiency CdTe Solar Cells through CuSeCN Treatment. 通过 CuSeCN 处理合理设计和优化高效碲化镉太阳能电池的带隙和 p 型掺杂。
IF 8.3 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-01-31 DOI: 10.1021/acsami.4c16540
Kanghui Zheng, Yufeng Zhou, Ruilin Wang, Gang Wang, Qiaomu Xie, Yonghua Wang, Lin Zheng, Ganhua Fu, Jingong Pan, Shou Peng

Broadening the alloyed CdSexTe1-x region in the absorber layer is the key to preparing highly efficient CdTe-based solar cells (SCs). With CdSe prejunction doping, the diffusion distance via the non-in situ Se doping method is restricted, and the doping ions are difficult to completely diffuse through the whole absorber layer. Moreover, the commonly used p-type back contact material CuSCN shows efficient copper doping characteristics, but the S element is not an ideal doping source for the CdTe absorber. Thus, it is demanding to develop new materials with dual activation of copper and Se. In this paper, on the one hand, CuSeCN was used as a Se doping source on the back surface of the absorber to successfully form p-CdSeTe with a band gap of 1.438 eV. On the other hand, as an emerging copper-treated material, CuSeCN is able to enhance the carrier extraction rate and lower the Schottky barrier of the device, which exhibits similar hole activation performance to CuSCN. In addition, CdTe thin-film devices treated with CuSeCN exhibit higher PCEs than those of devices treated with a CuSCN/CdSe double layer. After optimizing the experimental conditions, the short current density of CuSeCN-doped CdTe thin-film solar cells increased from 28.03 to 30.02 mA/cm2, the FF increased from 58.11 to 70.06%, and the power conversion efficiency was 17.48%. These results confirmed that CuSeCN is a promising candidate for both efficient carrier doping and lowering the band gaps of CdTe-based SCs.

拓宽吸收层中的 CdSexTe1-x 合金区是制备高效碲化镉太阳能电池(SC)的关键。在 CdSe 预结掺杂的情况下,非原位 Se 掺杂法的扩散距离受到限制,掺杂离子很难完全扩散到整个吸收层。此外,常用的 p 型背接触材料 CuSCN 具有高效的铜掺杂特性,但 S 元素并不是碲化镉吸收体的理想掺杂源。因此,开发具有铜和硒双重活化特性的新材料成为当务之急。本文一方面利用 CuSeCN 作为吸收体背面的 Se 掺杂源,成功地形成了带隙为 1.438 eV 的 p-CdSeTe。另一方面,作为一种新兴的铜处理材料,CuSeCN 能够提高器件的载流子萃取率并降低肖特基势垒,其空穴活化性能与 CuSCN 相似。此外,与使用 CuSCN/CdSe 双层处理的器件相比,使用 CuSeCN 处理的碲化镉薄膜器件显示出更高的 PCE。优化实验条件后,掺杂 CuSeCN 的碲化镉薄膜太阳能电池的短电流密度从 28.03 mA/cm2 提高到 30.02 mA/cm2,FF 从 58.11% 提高到 70.06%,功率转换效率为 17.48%。这些结果证实,CuSeCN 是高效掺杂载流子和降低碲化镉薄膜太阳能电池带隙的理想候选材料。
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引用次数: 0
Heavy Atom as a Molecular Sensor of Electronic Density: The Advanced Dimer-Type Light-Emitting System for NIR Emission.
IF 8.3 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-01-31 DOI: 10.1021/acsami.4c21674
Michał Mońka, Piotr Pander, Daria Grzywacz, Artur Sikorski, Radosław Rogowski, Piotr Bojarski, Andrew P Monkman, Illia E Serdiuk

The approaches to design and control intermolecular interactions for a selective enhancement of specific process(es) are of high interest in technologies using molecular materials. Here, we describe how π-π stacking enables control over the heavy-atom effect and spin-orbit coupling (SOC) through dimerization of an organic emitter in solid media. π-π interactions in a red thermally activated delayed fluorescence (TADF) emitter Ac-CNBPz afford specific types of dimers. In its brominated derivative Ac-CNBPzBr, the vicinity of the Br atom and the electronic density of the dimer involved in a spin-flip transition afford up to 200-fold increase of the SOC, in the most favorable case, attributed to the external heavy-atom effect (EHAE) of the halogen atom. The presence of such dimers in the films of Ac-CNBPzBr provides enhancement of reverse intersystem crossing, and thus, TADF occurs mostly within a few microseconds, up to 20 times faster than in Ac-CNBPz. For this reason, organic light-emitting diodes using Ac-CNBPzBr as an emitter and an assistant dopant show a decreased efficiency roll-off by a factor of 4 and 1.5, respectively. The crucial aspects of the intermolecular electronic interactions between a chromophore system and an HA together with the particularly favorable dimer geometry not only help to understand the nature of the EHAE but also provide guidelines for the molecular design of emitters for all-organic light-emitting devices with enhanced stability.

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引用次数: 0
Direct Evaluation of the Electrode/Electrolyte Interface with Additives by Single-Particle Electrochemical Measurement. 通过单粒子电化学测量直接评估添加剂的电极/电解质界面。
IF 8.3 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-01-31 DOI: 10.1021/acsami.4c18689
Shinji Matsumoto, Koji Hiraoka, Hiroyuki Tokuda, Shiro Seki

To achieve high-performance lithium-ion batteries (LIBs), controlling interfacial reactions at the electrode/electrolyte interface is intensely studied by introducing chemical additives into the electrolyte solution. These additives preferentially decompose over other electrolyte components, forming a stable interphase film at the electrode/electrolyte interface, which protects against capacity degradation and overcharging. However, the composite nature of conventional LIB electrodes makes it challenging to directly observe the electrochemical properties and formation process of the passivation film on the active material alone. To address this challenge, we used single-particle electrochemical measurement (SPEM), which uses an open-type measurement cell, enabling the direct observation of resistance component changes within a single particle during the in-situ introduction of additives. In this study, SPEM was applied to a LiCoO2 single particle (LCO-SP) to evaluate changes in electrochemical and resistance properties with the in-situ introduction of an additive solution under a charged state. The electrolyte solution and additive used were 1.0 mol kg-1 ethylene carbonate-LiN(SO2F)2, with LiPO2F2 as the additive avoiding concentration changes of LiN(SO2F)2. In the additive-free system, SPEM and AC impedance measurements revealed a single asymmetric semicircular arc, indicating resistance components related to the internal LCO SP, charge transfer, and the interphase layer at the electrode/electrolyte interface. In the additive-containing system (1.0 wt %), the semicircular arc from AC impedance measurements exhibited a decrease in time constant and slight noise, suggesting changes in the charge transfer process. Upon in-situ introduction of the additive under a charged state, the impedance spectra exhibited two semicircular arcs and an increasing trend in the resistance of their lower frequency component, while maintaining potential, attributed to the growth of the interphase layer at the LCO SP/electrolyte interface. Therefore, SPEM enables direct and precise observation of resistance behavior at the electrode/electrolyte interface on a single particle scale during additive introduction.

为了实现高性能锂离子电池(LIB),人们通过在电解质溶液中引入化学添加剂,对电极/电解质界面的界面反应进行了深入研究。这些添加剂会优先于其他电解质成分分解,在电极/电解质界面形成稳定的相间膜,从而防止容量衰减和过充电。然而,传统 LIB 电极的复合性质使得直接观察活性材料单独的电化学特性和钝化膜的形成过程具有挑战性。为解决这一难题,我们采用了单颗粒电化学测量(SPEM)技术,该技术使用开放式测量池,可直接观察添加剂原位引入过程中单颗粒内电阻成分的变化。本研究将 SPEM 应用于钴酸锂单颗粒(LCO-SP),以评估在带电状态下原位引入添加剂溶液时电化学和电阻特性的变化。所使用的电解质溶液和添加剂为 1.0 mol kg-1 碳酸乙烯-LiN(SO2F)2,其中 LiPO2F2 作为添加剂可避免 LiN(SO2F)2 的浓度变化。在不含添加剂的系统中,SPEM 和交流阻抗测量显示出单一的不对称半圆弧,表明电阻成分与内部 LCO SP、电荷转移以及电极/电解质界面的相间层有关。在含添加剂(1.0 wt %)的体系中,交流阻抗测量的半圆弧显示出时间常数的下降和轻微的噪声,表明电荷转移过程发生了变化。在带电状态下原位引入添加剂后,阻抗谱显示出两个半圆弧,其低频分量的电阻呈上升趋势,同时电位保持不变,这归因于 LCO SP/电解质界面上相间层的生长。因此,在添加剂引入过程中,SPEM 能够在单颗粒尺度上直接、精确地观察电极/电解质界面的电阻行为。
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引用次数: 0
High-Performance Flexible Microwave Absorption Films with Dynamic Adjustable Macrostructures and Alterable Electromagnetic Field Polarizations.
IF 8.3 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-01-31 DOI: 10.1021/acsami.4c17865
Yu Chen, Bin Quan, Jiajia Liu, Xiaochi Lu, Litao Lin, Gaofeng Shao, You Wen, Ruiheng Jin, Xiying Shen, Xiaogu Huang

Electromagnetic wave absorption materials that can be utilized for freewill adhering or peeling from the target substrate remain a challenge to be solved. Compared to powder-based slurry and coatings, microwave absorption films possess clear advantages for their good flexibility and machinability. However, the matching thickness and effective bandwidth of 2D microwave absorption films cannot satisfy the current application requirements. As a result, it is necessary to complete a rational structural design based on flat films. In view of the fact that common film-forming methods based on blocks or hard bases cannot be changed or replaced easily once the structural construction is done, here solvent evaporation molding combined with phase change material filling was proposed for the first time to accomplish continuous structural transformation for flexible films. Unlike the original reflection loss (RL) peaks of flat films at around 17.0 GHz, a new absorption peak near 12.25 GHz was generated thanks to the design of coherent structures, resulting in the peaks' boundary merging and effective bandwidth extension. Specifically, 4.56 GHz of absorption bandwidth (RL < -5 dB) at 1.0 mm and 4.27 GHz (RL < -10 dB) of absorption bandwidth at 2.3 mm could be obtained by arch testing under electrical field polarization. Importantly, correlations between EM field polarizations and coherent structures as well as the rules of the absorption peak generation and frequency shift related to the structural variation have all been figured out. The presented laws of EM pattern evolutions for structural films in this work lay the foundation for the applications of high-efficiency microwave absorption materials in complex surfaces and switchable scenes.

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引用次数: 0
Polarization-Sensitive Solar-Blind Ultraviolet Photodetectors Based on Semipolar (112̅2) AlGaN Film.
IF 8.3 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-01-31 DOI: 10.1021/acsami.4c18352
Yaqi Gao, Yali Yu, Jiankun Yang, Pan Wang, Yiwei Duo, Juehan Yang, Ziqiang Huo, Junxue Ran, Junxi Wang, Zhongming Wei, Tongbo Wei

Wide bandgap semiconductor AlGaN alloys have been identified as key materials to fabricate solar-blind ultraviolet photodetectors (SBUV PDs). Herein, a self-driven SBUV polarization-sensitive PD (PSPD) based on semipolar (112̅2)-oriented AlGaN films is reported. Using the flow-rate modulation epitaxy method, the full widths at half maximum (FWHMs) for the obtained (112̅2) AlGaN along [112̅3̅] and [11̅00] rocking curves are 0.205° and 0.262°, respectively, representing the best results for heteroepitaxial semipolar AlGaN so far. Density functional theory calculations and experimental results reveal that semipolar AlGaN possesses in-plane anisotropy. The self-driven (112̅2) AlGaN PSPDs exhibit strong polarization-sensitive photoresponse with a polarization ratio of 1.54 at 266 nm and rapid response of 450/450 ms compared to other low-dimensional semiconductor materials. More interestingly, we observe positive and negative photoresponse behaviors under UV light illumination due to surface states and charge transfer. Our results may enable potential applications in multifunctional SBUV optoelectronic devices.

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引用次数: 0
Defect-Induced Li-Ion Trapping and Hopping in a Grain Boundary-Engineered Li1.3Al0.3Ti1.7(PO4)3 Solid-State Electrolyte. 晶界工程锂1.3Al0.3Ti1.7(PO4)3固态电解质中缺陷诱发的锂离子捕获和跳变。
IF 8.3 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-01-31 DOI: 10.1021/acsami.4c21057
Sayan Ghosh, Subhajit Nandy, Abhijitha Valalahally Gopala, Tarak K Patra, Keun Hwa Chae, Birabar Ranjit Kumar Nanda, Chandran Sudakar

Understanding lithium-ion dynamics across defect-rich grain boundaries (GBs) is crucial for solid-state electrolytes. This study examines local electronic and structural changes in a Li1.3Al0.3Ti1.7(PO4)3 (LATP) solid electrolyte via X-ray absorption spectroscopy (XAS) and their correlation with ion transport properties. GBs were tailored through conventional isothermal sintering (CIS) and spark plasma sintering (SPS). Ti L2,3-, Ti K-, O K-, and P L2,3-edges from XAS revealed octahedral symmetry in bulk regions of both LATP-CIS and LATP-SPS. However, Ti L2,3-edge spectra in total electron yield mode and Ti K-edge white line intensity shifts in LATP-SPS indicate lower oxidation states and structural distortions due to a significant amorphous GB fraction. Modulations in O K-edge and P L2,3-edge spectra further highlight local structural differences in GB regions of LATP-CIS and LATP-SPS. Electron energy loss spectroscopy (EELS) also reveals variations in Ti L2,3-edge splitting and pre-edge peak intensities, consistent with X-ray absorption near-edge spectroscopy analysis. LATP-SPS exhibits a higher Li content in the GB region than LATP-CIS. The GB ionic conductivity of LATP-SPS (σgb,300 K ∼ 1.36 × 10-3 S/cm) is two orders higher than that of LATP-CIS (σgb,300 K ∼ 3.84 × 10-5 S/cm), while grain conductivity remains similar. Trapping and hopping enthalpy estimations suggest that trapped Li ions contribute ∼27% of activation energy for LATP-SPS compared to ∼17% for LATP-CIS. Enhanced ion diffusion in polycrystalline LATP GBs is predicted from molecular dynamics simulations, where liquid-like ion pair correlations improve mobility. This work highlights the significant influence of GB-induced structural distortions, probed through XAS and EELS, on the ionic conductivity and charge transport in LATP electrolytes.

了解富含缺陷的晶界(GB)上的锂离子动力学对固态电解质至关重要。本研究通过 X 射线吸收光谱 (XAS) 研究了 Li1.3Al0.3Ti1.7(PO4)3 (LATP) 固体电解质中的局部电子和结构变化及其与离子传输特性的相关性。通过传统等温烧结(CIS)和火花等离子烧结(SPS)定制了 GB。XAS 中的 Ti L2,3-、Ti K-、O K- 和 P L2,3- 边缘显示,LATP-CIS 和 LATP-SPS 的块体区域都具有八面体对称性。然而,在 LATP-SPS 中,总电子产率模式下的 Ti L2,3- 边光谱和 Ti K- 边白线强度偏移显示出较低的氧化态和由于大量非晶 GB 部分造成的结构畸变。O K-边和 P L2,3- 边光谱的变化进一步突出了 LATP-CIS 和 LATP-SPS GB 区域的局部结构差异。电子能量损失光谱(EELS)也显示了 Ti L2,3-edge 分裂和前缘峰强度的变化,这与 X 射线吸收近缘光谱分析一致。与 LATP-CIS 相比,LATP-SPS 在 GB 区域显示出更高的锂含量。LATP-SPS 的 GB 离子电导率(σgb,300 K ∼ 1.36 × 10-3 S/cm)比 LATP-CIS 的 GB 离子电导率(σgb,300 K ∼ 3.84 × 10-5 S/cm)高两个数量级,而晶粒电导率保持相似。捕获焓和跳跃焓估算表明,捕获的锂离子占 LATP-SPS 活化能的 27%,而 LATP-CIS 的这一比例为 17%。分子动力学模拟预测,多晶 LATP GB 中的离子扩散会增强,液态离子对相关性会提高迁移率。这项工作强调了通过 XAS 和 EELS 探测到的 GB 诱导的结构畸变对 LATP 电解质中离子电导率和电荷传输的重要影响。
{"title":"Defect-Induced Li-Ion Trapping and Hopping in a Grain Boundary-Engineered Li<sub>1.3</sub>Al<sub>0.3</sub>Ti<sub>1.7</sub>(PO<sub>4</sub>)<sub>3</sub> Solid-State Electrolyte.","authors":"Sayan Ghosh, Subhajit Nandy, Abhijitha Valalahally Gopala, Tarak K Patra, Keun Hwa Chae, Birabar Ranjit Kumar Nanda, Chandran Sudakar","doi":"10.1021/acsami.4c21057","DOIUrl":"https://doi.org/10.1021/acsami.4c21057","url":null,"abstract":"<p><p>Understanding lithium-ion dynamics across defect-rich grain boundaries (GBs) is crucial for solid-state electrolytes. This study examines local electronic and structural changes in a Li<sub>1.3</sub>Al<sub>0.3</sub>Ti<sub>1.7</sub>(PO<sub>4</sub>)<sub>3</sub> (LATP) solid electrolyte via X-ray absorption spectroscopy (XAS) and their correlation with ion transport properties. GBs were tailored through conventional isothermal sintering (CIS) and spark plasma sintering (SPS). Ti <i>L</i><sub>2,3</sub><i>-</i>, Ti <i>K</i>-, O <i>K</i>-, and P <i>L</i><sub>2,3</sub>-edges from XAS revealed octahedral symmetry in bulk regions of both LATP-CIS and LATP-SPS. However, Ti <i>L</i><sub>2</sub><sub>,</sub><sub>3</sub>-edge spectra in total electron yield mode and Ti K-edge white line intensity shifts in LATP-SPS indicate lower oxidation states and structural distortions due to a significant amorphous GB fraction. Modulations in O <i>K</i>-edge and P <i>L</i><sub>2,3</sub>-edge spectra further highlight local structural differences in GB regions of LATP-CIS and LATP-SPS. Electron energy loss spectroscopy (EELS) also reveals variations in Ti <i>L</i><sub>2,3</sub>-edge splitting and pre-edge peak intensities, consistent with X-ray absorption near-edge spectroscopy analysis. LATP-SPS exhibits a higher Li content in the GB region than LATP-CIS. The GB ionic conductivity of LATP-SPS (σ<sub>gb,300 K</sub> ∼ 1.36 × 10<sup>-3</sup> S/cm) is two orders higher than that of LATP-CIS (σ<sub>gb,300 K</sub> ∼ 3.84 × 10<sup>-5</sup> S/cm), while grain conductivity remains similar. Trapping and hopping enthalpy estimations suggest that trapped Li ions contribute ∼27% of activation energy for LATP-SPS compared to ∼17% for LATP-CIS. Enhanced ion diffusion in polycrystalline LATP GBs is predicted from molecular dynamics simulations, where liquid-like ion pair correlations improve mobility. This work highlights the significant influence of GB-induced structural distortions, probed through XAS and EELS, on the ionic conductivity and charge transport in LATP electrolytes.</p>","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":" ","pages":""},"PeriodicalIF":8.3,"publicationDate":"2025-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143070715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Subnanometer Tracking of the Oxidation State on Co3O4 Nanoparticles by Identical Location Imaging and Spectroscopy.
IF 8.3 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-01-31 DOI: 10.1021/acsami.4c20690
Franz-Philipp Schmidt, Thomas Götsch, Sharif Najafishirtari, Malte Behrens, Christoph Pratsch, Stephane Kenmoe, Dick Hartmann Douma, Frank Girgsdies, Jasmin Allan, Axel Knop-Gericke, Thomas Lunkenbein

Understanding a catalytic reaction requires tools that elucidate the structure of the catalyst surface and subsurface, ideally at atomic resolution and under reaction conditions. Operando electron microscopy meets this requirement in some cases, but fails in others where the required reaction conditions cannot be reached or lead to an unwanted influence of the electron beam on the reactant and catalyst. We introduce ILIAS (identical location imaging and spectroscopy) in combination with a quasi in situ approach to disentangle the effect of heat and gas on the surface of nanoparticles from the effect of the electron beam. With this approach we allow high temperatures and pressures in any gaseous environment on the one hand, and atomic resolution imaging and spectroscopy on the other. As a proof of concept, we resolve the structural evolution of a Co3O4 spinel catalyst using ILIAS and track the oxidation state across the surface before and after heating in a reductive or oxidative environment. We then titrate the surface of the catalyst using CO as a probe molecule to remove highly active oxygen species formed during the thermal treatment, providing unprecedented insight into the interplay between pretreatment and surface reactivity of Co3O4 nanoparticles.

{"title":"Subnanometer Tracking of the Oxidation State on Co<sub>3</sub>O<sub>4</sub> Nanoparticles by Identical Location Imaging and Spectroscopy.","authors":"Franz-Philipp Schmidt, Thomas Götsch, Sharif Najafishirtari, Malte Behrens, Christoph Pratsch, Stephane Kenmoe, Dick Hartmann Douma, Frank Girgsdies, Jasmin Allan, Axel Knop-Gericke, Thomas Lunkenbein","doi":"10.1021/acsami.4c20690","DOIUrl":"https://doi.org/10.1021/acsami.4c20690","url":null,"abstract":"<p><p>Understanding a catalytic reaction requires tools that elucidate the structure of the catalyst surface and subsurface, ideally at atomic resolution and under reaction conditions. Operando electron microscopy meets this requirement in some cases, but fails in others where the required reaction conditions cannot be reached or lead to an unwanted influence of the electron beam on the reactant and catalyst. We introduce ILIAS (identical location imaging and spectroscopy) in combination with a quasi in situ approach to disentangle the effect of heat and gas on the surface of nanoparticles from the effect of the electron beam. With this approach we allow high temperatures and pressures in any gaseous environment on the one hand, and atomic resolution imaging and spectroscopy on the other. As a proof of concept, we resolve the structural evolution of a Co<sub>3</sub>O<sub>4</sub> spinel catalyst using ILIAS and track the oxidation state across the surface before and after heating in a reductive or oxidative environment. We then titrate the surface of the catalyst using CO as a probe molecule to remove highly active oxygen species formed during the thermal treatment, providing unprecedented insight into the interplay between pretreatment and surface reactivity of Co<sub>3</sub>O<sub>4</sub> nanoparticles.</p>","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":" ","pages":""},"PeriodicalIF":8.3,"publicationDate":"2025-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143062315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Surface Nd Sites Boost Charge Transfer of Fe2O3 Photoanodes for Enhanced Solar Water Oxidation.
IF 8.3 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-01-31 DOI: 10.1021/acsami.4c20958
Sen Cui, Kai Song, Houjiang Liu, Hongyan Li, Yufei Zhang, Weijie Ren, Rui Zhang, Kun Li, Fang He, Zhenxing Qin, Huilin Hou

Photoelectrochemical (PEC) water splitting for hydrogen production is a promising technology for sustainable energy generation. In this work, we introduce Nd sites boost the PEC performance of Fe2O3 photoanodes through a precise gas-phase cation exchange process, which substitutes surface Fe atoms with Nd. The incorporation of Nd significantly enhances charge transfer properties, increases carrier concentration, and reduces internal resistance, leading to a substantial increase in photocurrent density from 0.44 to 0.92 mA cm-2 at 1.23 VRHE. Further enhancement of catalytic activity was achieved by depositing a NiCo(OH)x layer and a photocurrent density of 1.15 mA cm-2 at 1.23 VRHE were obtained. Theoretical calculations corroborate these experimental results, revealing that Nd doping narrows the bandgap, improves charge separation efficiency, and lowers the reaction potential barrier, thereby accelerating water oxidation kinetics. These findings underscore the effectiveness of surface cation exchange and targeted metallic element doping in overcoming the intrinsic limitations of Fe2O3, providing a viable pathway for developing high-performance PEC systems for efficient hydrogen production.

{"title":"Surface Nd Sites Boost Charge Transfer of Fe<sub>2</sub>O<sub>3</sub> Photoanodes for Enhanced Solar Water Oxidation.","authors":"Sen Cui, Kai Song, Houjiang Liu, Hongyan Li, Yufei Zhang, Weijie Ren, Rui Zhang, Kun Li, Fang He, Zhenxing Qin, Huilin Hou","doi":"10.1021/acsami.4c20958","DOIUrl":"https://doi.org/10.1021/acsami.4c20958","url":null,"abstract":"<p><p>Photoelectrochemical (PEC) water splitting for hydrogen production is a promising technology for sustainable energy generation. In this work, we introduce Nd sites boost the PEC performance of Fe<sub>2</sub>O<sub>3</sub> photoanodes through a precise gas-phase cation exchange process, which substitutes surface Fe atoms with Nd. The incorporation of Nd significantly enhances charge transfer properties, increases carrier concentration, and reduces internal resistance, leading to a substantial increase in photocurrent density from 0.44 to 0.92 mA cm<sup>-2</sup> at 1.23 V<sub>RHE</sub>. Further enhancement of catalytic activity was achieved by depositing a NiCo(OH)<sub><i>x</i></sub> layer and a photocurrent density of 1.15 mA cm<sup>-2</sup> at 1.23 V<sub>RHE</sub> were obtained. Theoretical calculations corroborate these experimental results, revealing that Nd doping narrows the bandgap, improves charge separation efficiency, and lowers the reaction potential barrier, thereby accelerating water oxidation kinetics. These findings underscore the effectiveness of surface cation exchange and targeted metallic element doping in overcoming the intrinsic limitations of Fe<sub>2</sub>O<sub>3</sub>, providing a viable pathway for developing high-performance PEC systems for efficient hydrogen production.</p>","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":" ","pages":""},"PeriodicalIF":8.3,"publicationDate":"2025-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143062347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Au-In Alloy for Excellent Ohmic Contact in GeSe Devices with Enhanced Photodetector Properties.
IF 8.3 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-01-31 DOI: 10.1021/acsami.4c20063
Ruowang Chen, Hui Shi, Yu Liu, Mingyuan Wang, Dundong Yuan, Junpeng Shu, Md Al Shahriar Akash, Ming Tian, Zhenning Hu, Jiamin Xue, Hong-Quan Zhao, Fengyu Li, Neng Wan

Metal-semiconductor contact plays a significant role in devices such as transistors, photoemitters, and photodetectors. Here, the AuxIny alloy contact gives a state-of-the-art low RC (contact resistance) in GeSe devices. The RC of GeSe-AuxIny is measured to be 25 kΩ μm under channel carrier concentration around p = 2.490 × 1010 cm-2. This low RC is ascribed to a small barrier height of 16 meV. Our density functional theory calculation found the formation of a high conductive metallic GeSe-AuxIny interface due to indium doping, which screens the possible interface disorder-induced gap states and metal-induced gap states that are observed when using pure In (indium) or Au (gold) metal. The GeSe-AuxIny photodetectors show enhanced photoresponsivity with a specific photoresponsivity of 6.46 × 104 A/W and a detectivity of 8.9 × 1013 Jones (at 450 nm wavelength). Our study is helpful in designing high-performance GeSe-based devices.

{"title":"Au-In Alloy for Excellent Ohmic Contact in GeSe Devices with Enhanced Photodetector Properties.","authors":"Ruowang Chen, Hui Shi, Yu Liu, Mingyuan Wang, Dundong Yuan, Junpeng Shu, Md Al Shahriar Akash, Ming Tian, Zhenning Hu, Jiamin Xue, Hong-Quan Zhao, Fengyu Li, Neng Wan","doi":"10.1021/acsami.4c20063","DOIUrl":"https://doi.org/10.1021/acsami.4c20063","url":null,"abstract":"<p><p>Metal-semiconductor contact plays a significant role in devices such as transistors, photoemitters, and photodetectors. Here, the Au<sub><i>x</i></sub>In<sub><i>y</i></sub> alloy contact gives a state-of-the-art low <i>R</i><sub>C</sub> (contact resistance) in GeSe devices. The <i>R</i><sub>C</sub> of GeSe-Au<sub><i>x</i></sub>In<sub><i>y</i></sub> is measured to be 25 kΩ μm under channel carrier concentration around <i>p</i> = 2.490 × 10<sup>10</sup> cm<sup>-2</sup>. This low <i>R</i><sub>C</sub> is ascribed to a small barrier height of 16 meV. Our density functional theory calculation found the formation of a high conductive metallic GeSe-Au<sub><i>x</i></sub>In<sub><i>y</i></sub> interface due to indium doping, which screens the possible interface disorder-induced gap states and metal-induced gap states that are observed when using pure In (indium) or Au (gold) metal. The GeSe-Au<sub><i>x</i></sub>In<sub><i>y</i></sub> photodetectors show enhanced photoresponsivity with a specific photoresponsivity of 6.46 × 10<sup>4</sup> A/W and a detectivity of 8.9 × 10<sup>13</sup> Jones (at 450 nm wavelength). Our study is helpful in designing high-performance GeSe-based devices.</p>","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":" ","pages":""},"PeriodicalIF":8.3,"publicationDate":"2025-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143062097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Flexible and Stretchable Vitrimers for Sustainable Electronics.
IF 8.3 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-01-31 DOI: 10.1021/acsami.4c16995
Agni K Biswal, Peter Hong, Zhihan Zhang, Yiwen Zheng, Surabhit Gupta, Dhriti Nepal, Vikram Iyer, Aniruddh Vashisth

The rapid increase in electronic waste (e-waste) necessitates sustainable materials that combine functionality with recyclability. Here, we introduce a novel approach for creating flexible vitrimers─reprocessable polymers with dynamic covalent bonds─for use in electronic applications, such as wiring and connectors. By extending polymer chains and employing transesterification reaction, we develop vitrimers that exhibit tunable viscoelastic properties, high stretchability (over 250% tensile strain), and enhanced toughness (up to 466 J/m3). Our vitrimers demonstrate a topological freezing temperature (Tv) of 185-248 °C, adjustable through catalyst concentration and chain length. The materials are synthesized by using a two-step process involving widely available industrial chemicals. Molecular dynamics simulations provide insight into how chain extension and network topology affect viscoelasticity, supporting the experimental findings. Using transesterification, covalent bonding between flexible and rigid vitrimers can be achieved. We prototype a functional USB cable that successfully transfers power and data, showcases repairability, and is recyclable through a solvent-based process. These results highlight the potential of flexible vitrimers in reducing e-waste and advancing sustainable electronic manufacturing.

随着电子垃圾(e-waste)的迅速增加,我们需要一种兼具功能性和可回收性的可持续材料。在这里,我们介绍了一种新方法来制造柔性玻璃体--具有动态共价键的可再加工聚合物--以用于布线和连接器等电子应用。通过延长聚合物链和采用酯交换反应,我们开发出了具有可调粘弹性、高拉伸性(拉伸应变超过 250%)和增强韧性(高达 466 J/m3)的玻璃聚合物。我们的玻璃体显示出 185-248 °C 的拓扑冻结温度 (Tv),可通过催化剂浓度和链长进行调节。这种材料的合成采用两步法,涉及广泛可用的工业化学品。分子动力学模拟深入揭示了链延伸和网络拓扑结构如何影响粘弹性,为实验结果提供了支持。通过酯交换,可以实现柔性和刚性玻璃聚合物之间的共价键合。我们设计了一种功能性 USB 电缆的原型,它能成功地传输电力和数据,展示了可修复性,并可通过基于溶剂的工艺进行回收。这些成果凸显了柔性玻璃纤维在减少电子垃圾和促进可持续电子制造方面的潜力。
{"title":"Flexible and Stretchable Vitrimers for Sustainable Electronics.","authors":"Agni K Biswal, Peter Hong, Zhihan Zhang, Yiwen Zheng, Surabhit Gupta, Dhriti Nepal, Vikram Iyer, Aniruddh Vashisth","doi":"10.1021/acsami.4c16995","DOIUrl":"https://doi.org/10.1021/acsami.4c16995","url":null,"abstract":"<p><p>The rapid increase in electronic waste (e-waste) necessitates sustainable materials that combine functionality with recyclability. Here, we introduce a novel approach for creating flexible vitrimers─reprocessable polymers with dynamic covalent bonds─for use in electronic applications, such as wiring and connectors. By extending polymer chains and employing transesterification reaction, we develop vitrimers that exhibit tunable viscoelastic properties, high stretchability (over 250% tensile strain), and enhanced toughness (up to 466 J/m<sup>3</sup>). Our vitrimers demonstrate a topological freezing temperature (<i>T</i><sub>v</sub>) of 185-248 °C, adjustable through catalyst concentration and chain length. The materials are synthesized by using a two-step process involving widely available industrial chemicals. Molecular dynamics simulations provide insight into how chain extension and network topology affect viscoelasticity, supporting the experimental findings. Using transesterification, covalent bonding between flexible and rigid vitrimers can be achieved. We prototype a functional USB cable that successfully transfers power and data, showcases repairability, and is recyclable through a solvent-based process. These results highlight the potential of flexible vitrimers in reducing e-waste and advancing sustainable electronic manufacturing.</p>","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":" ","pages":""},"PeriodicalIF":8.3,"publicationDate":"2025-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143070717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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