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One-step Synthesis of Ag@Sm-codoped ZnO Nanobullets as a Novel Matrix for Photovoltaic Applications 一步合成Ag@Sm-codoped ZnO纳米子弹作为光伏应用的新型基质
IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-10-30 DOI: 10.1007/s11664-025-12470-w
Muhammad Saleem, Amir Shahzad, Omer Munir, Syed Mohsin Bin Arif, Saif Ur Rehman, M. I. Khan, Amjad Ali,  Naeem-ur-Rehman

Bare and Ag@Sm-codoped ZnO nanobullets have been synthesized via a one-step hydrothermal technique with a 1-weight ratio of Sm and a variable 0.5–1.5 weight ratio of Ag. To investigate the actual role played by codoping, a comparative study of bare and Ag@Sm-codoped ZnO nanobullets to nanowires is carried out. The behavior of predicted simulation results and experimental results is the same. X-ray diffraction (XRD) patterns revealed that the nanobullets have grown along the (002) Bragg plane. The (002) peak positions of all codoped samples move towards the lower angle side compared with bare ZnO. The field emission scanning electron microscopy (FE-SEM) results of bare and 1 wt.% of Sm and 0.5 wt.%, 1.0 wt.%, and 1.5 wt.% of Ag codoped ZnO shows open-ended nanobullets with altered morphology from the nanobullets shape to an irregular nanowire shape with larger length and diameter. By increasing the doping content, the average diameter and size of nanowires increase, and the density of nanowires slightly decreases. The as-grown nanobullets to nanowire films were used as photo-electrodes in fabricating dye-sensitized solar cells (DSSCs). The cell made using a bare ZnO photoanode shows an overall power conversion efficiency (PCE) of 0.91%, and the cell made with 1 wt.% of Sm and 1.5 wt.% of Ag codoped ZnO photoanode shows a PCE of 4.43%, which is about 80% higher than that of the DSSC fabricated with bare ZnO. This increase in power conversion is either owing to rare-earth ions doping, which escalates the absorption of light in the wide range of the solar spectrum by up and down conversion, or because of the doping of Ag ions, which reduces the recombination of photo-generated electrons and boosts the high charge carrier mobility. These results show that high-power conversion DSSCs can be fabricated by modifying ZnO photoanodes with Ag and Sm.

采用一步水热技术,以1质量比的Sm和0.5-1.5质量比的Ag合成了裸ZnO和Ag@Sm-codoped纳米子弹。为了研究共掺杂的实际作用,对裸ZnO纳米子弹和Ag@Sm-codoped ZnO纳米子弹与纳米线进行了对比研究。预测的仿真结果与实验结果基本一致。x射线衍射(XRD)显示,纳米子弹沿(002)Bragg平面生长。与裸ZnO相比,所有共掺杂样品的(002)峰位置都向低角度侧移动。对裸掺杂和1 wt.% Sm以及0.5 wt.%、1.0 wt.%和1.5 wt.% Ag共掺杂ZnO的场发射扫描电镜(FE-SEM)结果显示,ZnO的形貌从纳米子弹形状转变为长度和直径较大的不规则纳米线形状。随着掺杂量的增加,纳米线的平均直径和尺寸增加,而纳米线的密度略有降低。利用纳米子弹-纳米线薄膜作为光电极制备染料敏化太阳能电池(DSSCs)。使用裸ZnO光阳极制成的电池的总功率转换效率(PCE)为0.91%,而使用1 wt.%的Sm和1.5 wt.%的Ag共掺杂ZnO光阳极制成的电池的PCE为4.43%,比使用裸ZnO制备的DSSC提高了约80%。这种功率转换的增加要么是由于稀土离子的掺杂,通过上下转换增加了太阳光谱宽范围内光的吸收,要么是因为Ag离子的掺杂,减少了光生电子的重组,提高了高载流子的迁移率。这些结果表明,用Ag和Sm修饰ZnO光阳极可以制备高功率转换DSSCs。
{"title":"One-step Synthesis of Ag@Sm-codoped ZnO Nanobullets as a Novel Matrix for Photovoltaic Applications","authors":"Muhammad Saleem,&nbsp;Amir Shahzad,&nbsp;Omer Munir,&nbsp;Syed Mohsin Bin Arif,&nbsp;Saif Ur Rehman,&nbsp;M. I. Khan,&nbsp;Amjad Ali,&nbsp; Naeem-ur-Rehman","doi":"10.1007/s11664-025-12470-w","DOIUrl":"10.1007/s11664-025-12470-w","url":null,"abstract":"<div><p>Bare and Ag@Sm-codoped ZnO nanobullets have been synthesized via a one-step hydrothermal technique with a 1-weight ratio of Sm and a variable 0.5–1.5 weight ratio of Ag. To investigate the actual role played by codoping, a comparative study of bare and Ag@Sm-codoped ZnO nanobullets to nanowires is carried out. The behavior of predicted simulation results and experimental results is the same. X-ray diffraction (XRD) patterns revealed that the nanobullets have grown along the (002) Bragg plane. The (002) peak positions of all codoped samples move towards the lower angle side compared with bare ZnO. The field emission scanning electron microscopy (FE-SEM) results of bare and 1 wt.% of Sm and 0.5 wt.%, 1.0 wt.%, and 1.5 wt.% of Ag codoped ZnO shows open-ended nanobullets with altered morphology from the nanobullets shape to an irregular nanowire shape with larger length and diameter. By increasing the doping content, the average diameter and size of nanowires increase, and the density of nanowires slightly decreases. The as-grown nanobullets to nanowire films were used as photo-electrodes in fabricating dye-sensitized solar cells (DSSCs). The cell made using a bare ZnO photoanode shows an overall power conversion efficiency (PCE) of 0.91%, and the cell made with 1 wt.% of Sm and 1.5 wt.% of Ag codoped ZnO photoanode shows a PCE of 4.43%, which is about 80% higher than that of the DSSC fabricated with bare ZnO. This increase in power conversion is either owing to rare-earth ions doping, which escalates the absorption of light in the wide range of the solar spectrum by up and down conversion, or because of the doping of Ag ions, which reduces the recombination of photo-generated electrons and boosts the high charge carrier mobility. These results show that high-power conversion DSSCs can be fabricated by modifying ZnO photoanodes with Ag and Sm.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 1","pages":"460 - 470"},"PeriodicalIF":2.5,"publicationDate":"2025-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145761110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Screening and Structural Control of Phonon-Drag Thermoelectricity in MLG–GaAs–MLG MLG-GaAs-MLG中声子-拖热电的筛选与结构控制
IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-10-30 DOI: 10.1007/s11664-025-12482-6
Truong Van Tuan, Tran Trong Tai, Nguyen Duy Vy

The phonon-drag effect in monolayer graphene (MLG) and double-layer MLG–MLG systems has attracted considerable attention due to its potential for high-performance thermoelectric applications. In this double-layer MLG–GaAs–MLG structure, GaAs serves as a spacer layer that not only separates the two graphene sheets but also contributes piezoelectric phonons, thereby strongly influencing the phonon-drag thermoelectric effect. In this work, we investigate the phonon-drag thermoelectric coefficient in a double-layer MLG–GaAs–MLG structure, taking into account both deformation potential (acDP) and piezoelectric (acPE) acoustic phonon scattering mechanisms, as well as interlayer Coulomb screening within the random phase approximation (RPA) on different dielectric substrates (h-BN/Al(_2)O(_3)/HfO(_2)). The results reveal that at low temperatures, (S_g) is dominated by acPE, while at higher temperatures, acDP increases superlinearly with T up to the Bloch–Grüneisen temperature and becomes the primary mechanism, then gradually saturates above (T_{textrm{BG}}). The density dependence exhibits two regimes: at (T ll T_{textrm{BG}}), (S_g) decreases with increasing carrier density due to the Bloch–Grüneisen effect and enhanced screening; in contrast, for (T > T_{textrm{BG}}), (S_g) increases with density owing to the enlarged scattering phase space and the dominance of acDP. With increasing interlayer spacing, (S_g) increases progressively and saturates when (qd gtrsim 1 ; (text {with } q sim k_{F})) approaching the monolayer limit. Under asymmetric density conditions, (S_g) shifts toward the layer with higher conductivity, while dielectric environment effects are evident in the sequence (S_g^{text {HfO}_2}> S_g^{text {Al}_2text {O}_3} > S_g^{htext {-BN}}), though the differences diminish as the MLG interlayer spacing increases. These findings provide a comprehensive understanding of the phonon-drag mechanism in MLG–GaAs–MLG heterostructures and suggest effective thermoelectric tuning through carrier density engineering, interlayer spacing, and dielectric design, which are promising for the development of graphene-based thermoelectric devices.

单层石墨烯(MLG)和双层石墨烯-多层石墨烯(MLG - MLG)体系中的声子-阻力效应由于其在高性能热电应用方面的潜力而引起了人们的广泛关注。在这种双层MLG-GaAs-MLG结构中,GaAs作为间隔层,不仅将两个石墨烯片分开,而且还提供压电声子,从而强烈影响声子-拖热电效应。在这项工作中,我们研究了双层MLG-GaAs-MLG结构中的声子-拖热电系数,同时考虑了变形势(acDP)和压电(acPE)声子散射机制,以及不同介电基底(h-BN/Al (_2) O (_3) /HfO (_2))上随机相位近似(RPA)内的层间库仑筛选。结果表明,在低温下,(S_g)以acPE为主,而在高温下,acDP随T呈超线性增加,直至bloch - grisen温度,并成为主要机制,然后在(T_{textrm{BG}})以上逐渐饱和。密度依赖表现为两种情况:在(T ll T_{textrm{BG}}), (S_g)处,由于bloch - grisen效应和增强的筛选,载流子密度随密度的增加而降低;而对于(T > T_{textrm{BG}}), (S_g)随着密度的增大而增大,这是由于散射相空间的增大和acDP的优势。随着层间距的增大,(S_g)逐渐增大,并在(qd gtrsim 1 ; (text {with } q sim k_{F}))接近单层极限时趋于饱和。在非对称密度条件下,(S_g)向电导率较高的层偏移,而介电环境效应在层序(S_g^{text {HfO}_2}> S_g^{text {Al}_2text {O}_3} > S_g^{htext {-BN}})中很明显,但随着MLG层间距的增加,这种差异会减小。这些发现提供了对MLG-GaAs-MLG异质结构中声子-阻力机制的全面理解,并建议通过载流子密度工程、层间间距和介电介质设计进行有效的热电调谐,这对石墨烯基热电器件的发展有希望。
{"title":"Screening and Structural Control of Phonon-Drag Thermoelectricity in MLG–GaAs–MLG","authors":"Truong Van Tuan,&nbsp;Tran Trong Tai,&nbsp;Nguyen Duy Vy","doi":"10.1007/s11664-025-12482-6","DOIUrl":"10.1007/s11664-025-12482-6","url":null,"abstract":"<div><p>The phonon-drag effect in monolayer graphene (MLG) and double-layer MLG–MLG systems has attracted considerable attention due to its potential for high-performance thermoelectric applications. In this double-layer MLG–GaAs–MLG structure, GaAs serves as a spacer layer that not only separates the two graphene sheets but also contributes piezoelectric phonons, thereby strongly influencing the phonon-drag thermoelectric effect. In this work, we investigate the phonon-drag thermoelectric coefficient in a double-layer MLG–GaAs–MLG structure, taking into account both deformation potential (acDP) and piezoelectric (acPE) acoustic phonon scattering mechanisms, as well as interlayer Coulomb screening within the random phase approximation (RPA) on different dielectric substrates (h-BN/Al<span>(_2)</span>O<span>(_3)</span>/HfO<span>(_2)</span>). The results reveal that at low temperatures, <span>(S_g)</span> is dominated by acPE, while at higher temperatures, acDP increases superlinearly with <i>T</i> up to the Bloch–Grüneisen temperature and becomes the primary mechanism, then gradually saturates above <span>(T_{textrm{BG}})</span>. The density dependence exhibits two regimes: at <span>(T ll T_{textrm{BG}})</span>, <span>(S_g)</span> decreases with increasing carrier density due to the Bloch–Grüneisen effect and enhanced screening; in contrast, for <span>(T &gt; T_{textrm{BG}})</span>, <span>(S_g)</span> increases with density owing to the enlarged scattering phase space and the dominance of acDP. With increasing interlayer spacing, <span>(S_g)</span> increases progressively and saturates when <span>(qd gtrsim 1 ; (text {with } q sim k_{F}))</span> approaching the monolayer limit. Under asymmetric density conditions, <span>(S_g)</span> shifts toward the layer with higher conductivity, while dielectric environment effects are evident in the sequence <span>(S_g^{text {HfO}_2}&gt; S_g^{text {Al}_2text {O}_3} &gt; S_g^{htext {-BN}})</span>, though the differences diminish as the MLG interlayer spacing increases. These findings provide a comprehensive understanding of the phonon-drag mechanism in MLG–GaAs–MLG heterostructures and suggest effective thermoelectric tuning through carrier density engineering, interlayer spacing, and dielectric design, which are promising for the development of graphene-based thermoelectric devices.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 2","pages":"1700 - 1709"},"PeriodicalIF":2.5,"publicationDate":"2025-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146007027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhancement of Ion Transport and Electrochemical Performance in Methylcellulose-Based Polymer Electrolyte via CaZnFe2O4 Nanofiller Incorporation 加入CaZnFe2O4纳米填料增强甲基纤维素基聚合物电解质中的离子传输和电化学性能
IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-10-29 DOI: 10.1007/s11664-025-12461-x
Safar Saeed Mohammed, Asyar Ahmed MohammadAmin, Ahmed Hassan Ahmed, Karukh Ali Babakr, Shujahadeen Bakr Aziz, Peyman Aspoukeh, Hossein Khojasteh

This study investigates the enhancement of methylcellulose (MC)-based polymer electrolytes by incorporating zinc-doped calcium ferrite (CaZnFe2O4) as a nanofiller. The polymer electrolyte system consists of MC as the host polymer, sodium nitrate (NaNO3) as the salt, and glycerol as a plasticizer. The structural, electrochemical, and dielectric properties of the prepared samples were analyzed to determine the impact of nanofiller addition. Electrochemical impedance spectroscopy demonstrated a dramatic decrease in bulk resistance from 325 Ω (undoped) to 22 Ω (5 wt.% CaZnFe2O4), resulting in a 13.8-fold increase in direct current (DC) conductivity (from 7.73 × 10−5 S/cm to 1.07 × 10−3 S/cm). A shift in tan δ peak frequency from ~324 kHz in solid polymer electrolytes (SPE)-No to ~474 kHz in SPE-N5 evidences enhanced charge carrier mobility (shorter relaxation time). Alternating current (AC) conductivity analysis suggests enhanced ion mobility due to strong polymer-filler interactions. The findings suggest that 5% CaZnFe2O4 is the optimal concentration for achieving high ionic conductivity and stable electrochemical performance. This optimized polymer electrolyte system holds potential for applications in energy storage devices, including supercapacitors and rechargeable batteries. X-ray diffraction results indicate a reduction in crystallinity with increasing nanofiller content, favoring ion transport. The scanning electron microscope (SEM) results reveal that the CaZnFe2O4 particle size is below 50 nm (~37 nm), which favors the easy dispersion of the nanofiller within the polymer matrix. Fourier-transform infrared spectroscopy showed shifts in O-H (3352 cm−1) and C-O-C (1035 cm−1) bands, confirming strong polymer–filler–ion interactions between the polymer matrix, salt, and nanofiller, facilitating improved ionic conductivity.

本文研究了锌掺杂铁酸钙(CaZnFe2O4)作为纳米填料对甲基纤维素(MC)基聚合物电解质的增强作用。该聚合物电解质体系由MC为主体聚合物,硝酸钠(NaNO3)为盐,甘油为增塑剂组成。分析了制备样品的结构、电化学和介电性能,以确定纳米填料的添加对样品的影响。电化学阻抗谱显示,体电阻从325 Ω(未掺杂)急剧下降到22 Ω (5 wt.% CaZnFe2O4),导致直流(DC)电导率增加13.8倍(从7.73 × 10−5 S/cm到1.07 × 10−3 S/cm)。固体聚合物电解质(SPE)-No中的tan δ峰值频率从~324 kHz转变为SPE- n5中的~474 kHz,表明载流子迁移率增强(弛豫时间缩短)。交流电(AC)电导率分析表明,由于强聚合物-填料相互作用,离子迁移率增强。研究结果表明,5%的CaZnFe2O4是获得高离子电导率和稳定电化学性能的最佳浓度。这种优化的聚合物电解质系统具有应用于能量存储设备的潜力,包括超级电容器和可充电电池。x射线衍射结果表明,随着纳米填料含量的增加,结晶度降低,有利于离子的传递。扫描电镜(SEM)结果表明,CaZnFe2O4的粒径小于50 nm (~37 nm),有利于纳米填料在聚合物基体内的分散。傅里叶变换红外光谱显示O-H (3352 cm−1)和C-O-C (1035 cm−1)波段发生位移,证实了聚合物基质、盐和纳米填料之间的强聚合物-填料-离子相互作用,促进了离子电导率的提高。
{"title":"Enhancement of Ion Transport and Electrochemical Performance in Methylcellulose-Based Polymer Electrolyte via CaZnFe2O4 Nanofiller Incorporation","authors":"Safar Saeed Mohammed,&nbsp;Asyar Ahmed MohammadAmin,&nbsp;Ahmed Hassan Ahmed,&nbsp;Karukh Ali Babakr,&nbsp;Shujahadeen Bakr Aziz,&nbsp;Peyman Aspoukeh,&nbsp;Hossein Khojasteh","doi":"10.1007/s11664-025-12461-x","DOIUrl":"10.1007/s11664-025-12461-x","url":null,"abstract":"<div><p>This study investigates the enhancement of methylcellulose (MC)-based polymer electrolytes by incorporating zinc-doped calcium ferrite (CaZnFe<sub>2</sub>O<sub>4</sub>) as a nanofiller. The polymer electrolyte system consists of MC as the host polymer, sodium nitrate (NaNO<sub>3</sub>) as the salt, and glycerol as a plasticizer. The structural, electrochemical, and dielectric properties of the prepared samples were analyzed to determine the impact of nanofiller addition. Electrochemical impedance spectroscopy demonstrated a dramatic decrease in bulk resistance from 325 Ω (undoped) to 22 Ω (5 wt.% CaZnFe<sub>2</sub>O<sub>4</sub>), resulting in a 13.8-fold increase in direct current (DC) conductivity (from 7.73 × 10<sup>−5</sup> S/cm to 1.07 × 10<sup>−3</sup> S/cm). A shift in tan <i>δ</i> peak frequency from ~324 kHz in solid polymer electrolytes (SPE)-No to ~474 kHz in SPE-N5 evidences enhanced charge carrier mobility (shorter relaxation time). Alternating current (AC) conductivity analysis suggests enhanced ion mobility due to strong polymer-filler interactions. The findings suggest that 5% CaZnFe<sub>2</sub>O<sub>4</sub> is the optimal concentration for achieving high ionic conductivity and stable electrochemical performance. This optimized polymer electrolyte system holds potential for applications in energy storage devices, including supercapacitors and rechargeable batteries. X-ray diffraction results indicate a reduction in crystallinity with increasing nanofiller content, favoring ion transport. The scanning electron microscope (SEM) results reveal that the CaZnFe<sub>2</sub>O<sub>4</sub> particle size is below 50 nm (<b>~</b>37 nm), which favors the easy dispersion of the nanofiller within the polymer matrix. Fourier-transform infrared spectroscopy showed shifts in O-H (3352 cm<sup>−1</sup>) and C-O-C (1035 cm<sup>−1</sup>) bands, confirming strong polymer–filler–ion interactions between the polymer matrix, salt, and nanofiller, facilitating improved ionic conductivity.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 1","pages":"446 - 459"},"PeriodicalIF":2.5,"publicationDate":"2025-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145760933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photocatalytic NOx Abatement: A Review of Materials, Mechanisms, and Strategies 光催化NOx减排:材料、机制和策略综述
IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-10-29 DOI: 10.1007/s11664-025-12455-9
Iqra Fareed, Muhammad Danish Khan, Masood ul Hassan Farooq, Muhammad Akram, Sajid ur Rehman, Hafiza Sadia Anam, Areej Zubair, Chuanbo Li, Faheem K. Butt

The continuous increase in nitrogen oxide (NOx) emissions from combustion processes, primarily from industrial factories and gasoline-powered vehicles, poses a significant threat to all living organisms. The detrimental effects of NOx on human health and the environment necessitate concentrated efforts to reduce these emissions. Various strategies have been developed to mitigate NOx emissions from exhaust fumes. Recently, photocatalytic oxidation technologies for removing NOx have gained considerable attention within the scientific community. Photocatalytic NOx removal (PNR) is a promising environmentally friendly and cost-effective method for reducing NOx concentrations at room temperature. This review categorizes and summarizes the multifaceted aspects of PNR. It provides a concise overview of the photocatalytic mechanism and the NOx abatement process. Investigations reveal that the efficiency of NOx removal significantly depends on the bandgap and positions of the valence and conduction band edges, which can be tuned by incorporating suitable dopants or forming heterojunctions. The charge transfer at the photocatalyst surface can be enhanced by employing various methods to tune the surface morphology. This review offers comprehensive details on the semiconductor materials used for NOx abatement and discusses how their unique properties contribute to efficient PNR.

Graphical Abstract

燃烧过程(主要来自工业工厂和汽油动力车辆)排放的氮氧化物(NOx)持续增加,对所有生物构成重大威胁。氮氧化物对人类健康和环境的有害影响需要集中努力减少这些排放。已经制定了各种策略来减少废气中的氮氧化物排放。近年来,光催化氧化去除NOx的技术受到了科学界的广泛关注。光催化NOx脱除(PNR)是一种在室温下降低NOx浓度的有前途的环保和经济的方法。本文对PNR的多个方面进行了分类和总结。它提供了光催化机理和氮氧化物减排过程的简要概述。研究表明,NOx的去除效率很大程度上取决于带隙以及价带和导带边缘的位置,这可以通过掺入合适的掺杂剂或形成异质结来调节。光催化剂表面的电荷转移可以通过采用各种方法来调整表面形貌来增强。这篇综述提供了用于NOx减排的半导体材料的全面细节,并讨论了它们的独特性能如何有助于高效的PNR。图形抽象
{"title":"Photocatalytic NOx Abatement: A Review of Materials, Mechanisms, and Strategies","authors":"Iqra Fareed,&nbsp;Muhammad Danish Khan,&nbsp;Masood ul Hassan Farooq,&nbsp;Muhammad Akram,&nbsp;Sajid ur Rehman,&nbsp;Hafiza Sadia Anam,&nbsp;Areej Zubair,&nbsp;Chuanbo Li,&nbsp;Faheem K. Butt","doi":"10.1007/s11664-025-12455-9","DOIUrl":"10.1007/s11664-025-12455-9","url":null,"abstract":"<div><p>The continuous increase in nitrogen oxide (NO<sub><i>x</i></sub>) emissions from combustion processes, primarily from industrial factories and gasoline-powered vehicles, poses a significant threat to all living organisms. The detrimental effects of NO<sub><i>x</i></sub> on human health and the environment necessitate concentrated efforts to reduce these emissions. Various strategies have been developed to mitigate NO<sub><i>x</i></sub> emissions from exhaust fumes. Recently, photocatalytic oxidation technologies for removing NO<sub><i>x</i></sub> have gained considerable attention within the scientific community. Photocatalytic NO<sub><i>x</i></sub> removal (PNR) is a promising environmentally friendly and cost-effective method for reducing NO<sub><i>x</i></sub> concentrations at room temperature. This review categorizes and summarizes the multifaceted aspects of PNR. It provides a concise overview of the photocatalytic mechanism and the NO<sub><i>x</i></sub> abatement process. Investigations reveal that the efficiency of NO<sub><i>x</i></sub> removal significantly depends on the bandgap and positions of the valence and conduction band edges, which can be tuned by incorporating suitable dopants or forming heterojunctions. The charge transfer at the photocatalyst surface can be enhanced by employing various methods to tune the surface morphology. This review offers comprehensive details on the semiconductor materials used for NO<sub><i>x</i></sub> abatement and discusses how their unique properties contribute to efficient PNR.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 1","pages":"144 - 179"},"PeriodicalIF":2.5,"publicationDate":"2025-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145760977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electronic Structure and Optical Properties for Neutral Vacancy Defects in Amorphous Ga2O3: A First-Principle Approach 非晶Ga2O3中性空位缺陷的电子结构和光学性质:第一性原理方法
IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-10-28 DOI: 10.1007/s11664-025-12436-y
Xudong Zhang, Donglin Cai, Jiahui Tong, Hai Liu

In this work, we establish models of amorphous Ga2O3(a-Ga2O3) and its five vacancy defects using molecular dynamics and density functional theory. Through hybrid functional calculations, we calculate the electronic structure, defect formation energies, and optical properties of these models. We explain the structural characteristics of the a-Ga2O3 model through bond lengths, bond angles, and radial distribution functions. Based on the coordination of oxygen and gallium atoms in the a-Ga2O3 model, the defects are divided into three types of oxygen vacancies (VO) and two types of gallium vacancies (VGa). Electronic structure calculations show that VO will introduce defect states in the band gap, which are contributed by the O 2p states and Ga 4s or 4p states. The VGa will induce spin polarization through the dangling bonds of the 2p orbitals of the surrounding oxygen atoms. The defect formation energy of VO is lower than that of VGa, and a-Ga2O3 is more likely to exhibit n-type conductivity. The discussion on the changes in the optical absorption spectra and the imaginary part of the dielectric function reveal that different types of VO and VGa cause optical absorption near 3 eV, 2.88 eV, 3.28 eV, 1.6 eV, and 3.45 eV, respectively. The introduction of defects increases the number of absorption peaks and induces a red shift in the absorption edge. This work provides a reference for explaining the influence mechanism of neutral vacancy defects inside a-Ga2O3 materials on the electronic structure and optical properties of the material.

本文利用分子动力学和密度泛函理论建立了非晶态Ga2O3(a-Ga2O3)及其5个空位缺陷的模型。通过混合泛函计算,我们计算了这些模型的电子结构、缺陷形成能和光学性质。我们通过键长、键角和径向分布函数解释了a-Ga2O3模型的结构特征。基于a-Ga2O3模型中氧和镓原子的配位,将缺陷分为三种氧空位(VO)和两种镓空位(VGa)。电子结构计算表明,VO会在带隙中引入缺陷态,这些缺陷态是由o2p态和ga4s或4p态贡献的。VGa将通过周围氧原子的2p轨道的悬空键诱导自旋极化。VO的缺陷形成能低于VGa, a-Ga2O3更容易表现出n型电导率。对光吸收光谱和介电函数虚部变化的讨论表明,不同类型的VO和VGa分别在3 eV、2.88 eV、3.28 eV、1.6 eV和3.45 eV附近引起光吸收。缺陷的引入增加了吸收峰的数量,并引起吸收边的红移。本工作为解释a- ga2o3材料内部中性空位缺陷对材料电子结构和光学性能的影响机理提供了参考。
{"title":"Electronic Structure and Optical Properties for Neutral Vacancy Defects in Amorphous Ga2O3: A First-Principle Approach","authors":"Xudong Zhang,&nbsp;Donglin Cai,&nbsp;Jiahui Tong,&nbsp;Hai Liu","doi":"10.1007/s11664-025-12436-y","DOIUrl":"10.1007/s11664-025-12436-y","url":null,"abstract":"<div><p>In this work, we establish models of amorphous Ga<sub>2</sub>O<sub>3</sub>(<i>a</i>-Ga<sub>2</sub>O<sub>3</sub>) and its five vacancy defects using molecular dynamics and density functional theory. Through hybrid functional calculations, we calculate the electronic structure, defect formation energies, and optical properties of these models. We explain the structural characteristics of the <i>a</i>-Ga<sub>2</sub>O<sub>3</sub> model through bond lengths, bond angles, and radial distribution functions. Based on the coordination of oxygen and gallium atoms in the <i>a</i>-Ga<sub>2</sub>O<sub>3</sub> model, the defects are divided into three types of oxygen vacancies (<i>V</i><sub>O</sub>) and two types of gallium vacancies (<i>V</i><sub>Ga</sub>). Electronic structure calculations show that <i>V</i><sub>O</sub> will introduce defect states in the band gap, which are contributed by the O 2<i>p</i> states and Ga 4<i>s</i> or 4<i>p</i> states. The <i>V</i><sub>Ga</sub> will induce spin polarization through the dangling bonds of the 2<i>p</i> orbitals of the surrounding oxygen atoms. The defect formation energy of <i>V</i><sub>O</sub> is lower than that of <i>V</i><sub>Ga</sub>, and <i>a</i>-Ga<sub>2</sub>O<sub>3</sub> is more likely to exhibit <i>n</i>-type conductivity. The discussion on the changes in the optical absorption spectra and the imaginary part of the dielectric function reveal that different types of <i>V</i><sub>O</sub> and <i>V</i><sub>Ga</sub> cause optical absorption near 3 eV, 2.88 eV, 3.28 eV, 1.6 eV, and 3.45 eV, respectively. The introduction of defects increases the number of absorption peaks and induces a red shift in the absorption edge. This work provides a reference for explaining the influence mechanism of neutral vacancy defects inside <i>a</i>-Ga<sub>2</sub>O<sub>3</sub> materials on the electronic structure and optical properties of the material.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 1","pages":"748 - 758"},"PeriodicalIF":2.5,"publicationDate":"2025-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145760998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Integrated Reverse Design of Load-Bearing Metamaterial Absorbers Based on Deep Learning 基于深度学习的承载超材料吸波器集成反设计
IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-10-28 DOI: 10.1007/s11664-025-12407-3
Kaifa Ding, Yang Yang

To address the issues of poor load-bearing capacity, low design efficiency, and the difficulty of integrating structural and functional design in current absorbing structures, a study on the integrated reverse design of load-bearing metamaterial absorbers was conducted. A parametric model of the load-bearing metamaterial absorber was developed using a combination of composite core structures and electromagnetic resonant layers. A dataset of electromagnetic and structural properties of the absorber was established. A deep learning-based forward prediction network for the absorber’s absorbance and a design parameter reverse prediction network were developed and trained, achieving high-accuracy predictions of both the absorbance and design parameters. Based on the forward and reverse prediction networks, an integrated reverse design method for metamaterial absorbers was proposed. This method enables the reverse design of the metamaterial absorber on the basis of specified electromagnetic and structural properties while addressing the issue of unattainable design goals through polar coordinate transformation. The method was applied to reverse design tasks for single-frequency, multi-frequency, and broadband load-bearing metamaterial absorbers. The proposed integrated reverse design method holds significant potential for applications in radar stealth material design for military targets, such as naval vessels, and offers broad generalizability and engineering applicability.

针对目前吸波结构承载能力差、设计效率低、结构与功能设计难以整合的问题,开展了承载超材料吸波结构整体反设计研究。采用复合芯结构和电磁谐振层相结合的方法,建立了承重超材料吸振器的参数化模型。建立了吸收体的电磁特性和结构特性数据集。开发并训练了基于深度学习的吸光度前向预测网络和设计参数反向预测网络,实现了吸光度和设计参数的高精度预测。提出了一种基于正反向预测网络的超材料吸波器综合反求设计方法。该方法能够在给定电磁特性和结构特性的基础上对超材料吸波器进行反向设计,同时通过极坐标变换解决设计目标无法实现的问题。将该方法应用于单频、多频和宽带承重超材料吸波器的反求设计任务。所提出的综合反设计方法在军用目标(如海军舰艇)雷达隐身材料设计中具有重要的应用潜力,具有广泛的通用性和工程适用性。
{"title":"The Integrated Reverse Design of Load-Bearing Metamaterial Absorbers Based on Deep Learning","authors":"Kaifa Ding,&nbsp;Yang Yang","doi":"10.1007/s11664-025-12407-3","DOIUrl":"10.1007/s11664-025-12407-3","url":null,"abstract":"<div><p>To address the issues of poor load-bearing capacity, low design efficiency, and the difficulty of integrating structural and functional design in current absorbing structures, a study on the integrated reverse design of load-bearing metamaterial absorbers was conducted. A parametric model of the load-bearing metamaterial absorber was developed using a combination of composite core structures and electromagnetic resonant layers. A dataset of electromagnetic and structural properties of the absorber was established. A deep learning-based forward prediction network for the absorber’s absorbance and a design parameter reverse prediction network were developed and trained, achieving high-accuracy predictions of both the absorbance and design parameters. Based on the forward and reverse prediction networks, an integrated reverse design method for metamaterial absorbers was proposed. This method enables the reverse design of the metamaterial absorber on the basis of specified electromagnetic and structural properties while addressing the issue of unattainable design goals through polar coordinate transformation. The method was applied to reverse design tasks for single-frequency, multi-frequency, and broadband load-bearing metamaterial absorbers. The proposed integrated reverse design method holds significant potential for applications in radar stealth material design for military targets, such as naval vessels, and offers broad generalizability and engineering applicability.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 1","pages":"1 - 17"},"PeriodicalIF":2.5,"publicationDate":"2025-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145761083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An Open-Access Framework for Optimizing Plasmonic Nanoparticle-Based Sensors in Biomedical Applications 在生物医学应用中优化等离子体纳米粒子传感器的开放访问框架
IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-10-28 DOI: 10.1007/s11664-025-12498-y
Alok Singh, Manmohan Singh Shishodia

We present NanoSensorLab, an open-access MATLAB-based simulation toolbox grounded in Mie scattering theory for the advanced modeling and optimization of plasmonic nanoparticle-based sensors. The toolbox comprises two integrated modules: Nanoscattering, which computes scattering (Qsca), absorption (Qabs), and extinction (Qext) efficiencies alongside key optical metrics such as peak wavelength, line width, and quality factor (QF); and Nanosensor, which evaluates sensor performance parameters including sensitivity (S) and figure-of-merit (FOM). NanoSensorLab supports multilayered spherical geometries, nanoshells, nanomatryoshkas, and gain-assisted configurations, and incorporates a material library that includes noble metals, transition metal nitrides, and graphene with user-defined optical properties. The toolbox enables rapid design of high-performance LSPR-based sensors and facilitates parametric studies via an intuitive graphical interface. Simulations demonstrate that graphene-integrated TiN-based nanomatryoshkas can achieve sensitivities up to 925.28 nm/RIU, representing a 125.52% enhancement over conventional designs. Benchmarking against COMSOL Multiphysics validates the numerical accuracy of the implementation. NanoSensorLab offers a streamlined, customizable platform for designing plasmonic biosensors targeting biomedical diagnostics such as glucose monitoring and cancer cell detection. The toolbox is freely available at: https://github.com/aloksinghphy/Toolbox.

我们提出了NanoSensorLab,一个基于matlab的开放访问仿真工具箱,基于Mie散射理论,用于等离子体纳米粒子传感器的高级建模和优化。工具箱包括两个集成模块:纳米散射,计算散射(Qsca),吸收(Qabs)和消光(Qext)效率以及关键的光学指标,如峰值波长,线宽和质量因子(QF);和纳米传感器,评估传感器性能参数,包括灵敏度(S)和品质系数(FOM)。NanoSensorLab支持多层球形几何,纳米壳,纳米结构和增益辅助配置,并结合了一个材料库,包括贵金属,过渡金属氮化物和石墨烯与用户定义的光学特性。该工具箱能够快速设计高性能的基于lspr的传感器,并通过直观的图形界面促进参数化研究。仿真结果表明,石墨烯集成tin基纳米材料的灵敏度高达925.28 nm/RIU,比传统设计提高了125.52%。针对COMSOL Multiphysics的基准测试验证了实现的数值准确性。NanoSensorLab提供了一个精简的、可定制的平台,用于设计针对生物医学诊断(如葡萄糖监测和癌细胞检测)的等离子体生物传感器。该工具箱可在https://github.com/aloksinghphy/Toolbox免费获得。
{"title":"An Open-Access Framework for Optimizing Plasmonic Nanoparticle-Based Sensors in Biomedical Applications","authors":"Alok Singh,&nbsp;Manmohan Singh Shishodia","doi":"10.1007/s11664-025-12498-y","DOIUrl":"10.1007/s11664-025-12498-y","url":null,"abstract":"<div><p>We present NanoSensorLab, an open-access MATLAB-based simulation toolbox grounded in Mie scattering theory for the advanced modeling and optimization of plasmonic nanoparticle-based sensors. The toolbox comprises two integrated modules: Nanoscattering, which computes scattering (Q<sub>sca</sub>), absorption (Q<sub>abs</sub>), and extinction (Q<sub>ext</sub>) efficiencies alongside key optical metrics such as peak wavelength, line width, and quality factor (QF); and Nanosensor, which evaluates sensor performance parameters including sensitivity (S) and figure-of-merit (FOM). NanoSensorLab supports multilayered spherical geometries, nanoshells, nanomatryoshkas, and gain-assisted configurations, and incorporates a material library that includes noble metals, transition metal nitrides, and graphene with user-defined optical properties. The toolbox enables rapid design of high-performance LSPR-based sensors and facilitates parametric studies via an intuitive graphical interface. Simulations demonstrate that graphene-integrated TiN-based nanomatryoshkas can achieve sensitivities up to 925.28 nm/RIU, representing a 125.52% enhancement over conventional designs. Benchmarking against COMSOL Multiphysics validates the numerical accuracy of the implementation. NanoSensorLab offers a streamlined, customizable platform for designing plasmonic biosensors targeting biomedical diagnostics such as glucose monitoring and cancer cell detection. The toolbox is freely available at: https://github.com/aloksinghphy/Toolbox.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 1","pages":"123 - 135"},"PeriodicalIF":2.5,"publicationDate":"2025-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145760993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dunn’s Method for Distinguishing Charge Storage Mechanisms in Supercapacitors: A Status Quo Review 邓恩在超级电容器中区分电荷存储机制的方法:现状综述
IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-10-27 DOI: 10.1007/s11664-025-12481-7
S Harish, P. Uma Sathyakam

Understanding the mechanisms of charge storage in supercapacitors is crucial for optimizing their performance in advanced energy storage applications. Supercapacitors exhibit a blend of both electric double-layer capacitance (EDLC) and pseudocapacitance, making it essential to differentiate these contributions for material design and device optimization. Among various analytical methods, Dunn’s method, which uses cyclic voltammetry (CV) at varying scan rates, has emerged as a widely employed technique. As it is a relatively straightforward approach for deconvoluting capacitive and diffusion-controlled processes, this review provides a comprehensive overview of Dunn’s method, encompassing its theoretical background, analytical procedure, advantages, limitations, and applications across diverse electrode materials. Furthermore, the comparison of Dunn’s method with other electrochemical characterization techniques such as electrochemical impedance spectroscopy (EIS), galvanostatic charge–discharge (GCD), and Trasatti’s method also underscores future prospects for enhancing its accuracy and applicability. This review aims to serve as a practical guide for researchers looking to employ Dunn’s method in supercapacitor research.

了解超级电容器的电荷存储机制对于优化其在先进储能应用中的性能至关重要。超级电容器表现出双电层电容(EDLC)和伪电容的混合,因此区分它们对材料设计和器件优化的贡献至关重要。在各种分析方法中,Dunn的方法在不同的扫描速率下使用循环伏安法(CV),已经成为一种广泛应用的技术。由于这是一种相对简单的反卷积电容和扩散控制过程的方法,本文综述了Dunn方法的全面概述,包括其理论背景,分析过程,优点,局限性以及在不同电极材料中的应用。此外,Dunn的方法与其他电化学表征技术(如电化学阻抗谱(EIS)、恒流充放电(GCD)和Trasatti的方法)的比较也强调了提高其准确性和适用性的未来前景。这篇综述旨在为希望在超级电容器研究中采用邓恩方法的研究人员提供实用指南。
{"title":"Dunn’s Method for Distinguishing Charge Storage Mechanisms in Supercapacitors: A Status Quo Review","authors":"S Harish,&nbsp;P. Uma Sathyakam","doi":"10.1007/s11664-025-12481-7","DOIUrl":"10.1007/s11664-025-12481-7","url":null,"abstract":"<div><p>Understanding the mechanisms of charge storage in supercapacitors is crucial for optimizing their performance in advanced energy storage applications. Supercapacitors exhibit a blend of both electric double-layer capacitance (EDLC) and pseudocapacitance, making it essential to differentiate these contributions for material design and device optimization. Among various analytical methods, Dunn’s method, which uses cyclic voltammetry (CV) at varying scan rates, has emerged as a widely employed technique. As it is a relatively straightforward approach for deconvoluting capacitive and diffusion-controlled processes, this review provides a comprehensive overview of Dunn’s method, encompassing its theoretical background, analytical procedure, advantages, limitations, and applications across diverse electrode materials. Furthermore, the comparison of Dunn’s method with other electrochemical characterization techniques such as electrochemical impedance spectroscopy (EIS), galvanostatic charge–discharge (GCD), and Trasatti’s method also underscores future prospects for enhancing its accuracy and applicability. This review aims to serve as a practical guide for researchers looking to employ Dunn’s method in supercapacitor research.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 12","pages":"10858 - 10872"},"PeriodicalIF":2.5,"publicationDate":"2025-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145479687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Surface Finishes on the Microstructure and Shear-Speed-Dependent Mechanical Properties of Sn-Ag-Cu-Based Solder Joints 表面处理对sn - ag - cu基焊点显微组织和剪切速度相关力学性能的影响
IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-10-27 DOI: 10.1007/s11664-025-12484-4
Jiajun Wang, Min Shang, Xiaobin Luo, Qin Wang, Hongbo Lu, Lingyan Zhao, Yunpeng Wang, Haitao Ma, Xiaojing Wang, David P. Yan

This study systematically investigates the effects of surface finishes on the interfacial microstructure and shear-speed-dependent mechanical properties of Sn-Ag-Cu (SAC)-based solder joints. Two lead-free alloys, SAC305 and Innolot, were paired with four surface finishes, organic solderability preservative (OSP), immersion tin (ImSn), immersion silver (ImAg), and electroless nickel/immersion gold (ENIG), to assess their influence on intermetallic compound (IMC) formation, shear strength, and fracture behavior. Distinct IMC growth kinetics and morphologies were observed: OSP promoted rapid IMC growth with scalloped structures, while ENIG produced thinner, planar IMCs due to diffusion suppression. Innolot’s multi-element composition further refined IMC grains compared to SAC305. Shear testing across five speeds (0.01–1000 mm/s) revealed strong dependencies on both surface finish and strain rate. SAC305 joints followed a shear strength trend of ENIG > OSP > ImAg > ImSn, whereas Innolot exhibited more complex behavior, with OSP performing best at low speeds and ENIG at high speeds. Both alloys showed strain-rate strengthening, with SAC305 being more sensitive. Fracture modes shifted from ductile (bulk solder) to brittle (IMC interface) with increasing shear speed, with Innolot transitioning earlier. ENIG consistently outperformed other finishes by combining thin IMCs and robust adhesion, making it highly suitable for harsh environments. These findings offer valuable guidance for optimizing surface finishes in high-reliability electronic packaging.

本研究系统地研究了表面处理对Sn-Ag-Cu (SAC)基焊点界面微观结构和剪切速度相关力学性能的影响。研究人员将两种无铅合金SAC305和Innolot与有机可焊性防腐剂(OSP)、浸锡剂(ImSn)、浸银剂(ImAg)和化学镍/浸金剂(ENIG)这四种表面处理剂搭配使用,以评估它们对金属间化合物(IMC)形成、抗剪强度和断裂行为的影响。观察到不同的IMC生长动力学和形态:OSP促进了扇形结构的IMC快速生长,而ENIG由于扩散抑制而产生更薄的平面IMC。与SAC305相比,Innolot的多元素成分进一步细化了IMC颗粒。五种速度(0.01 - 1000mm /s)的剪切测试显示,表面光洁度和应变速率都有很强的依赖性。SAC305节理遵循ENIG >; OSP >; ImSn的抗剪强度趋势,而Innolot节理表现出更为复杂的抗剪强度趋势,低速时表现最好,高速时表现最好。两种合金均表现出应变率强化,以SAC305更为敏感。随着剪切速度的增加,断裂模式从延展性(大块焊料)转变为脆性(IMC界面),而Innolot的转变更早。通过结合薄imc和强大的附着力,ENIG始终优于其他表面处理,使其非常适合恶劣环境。这些发现为优化高可靠性电子封装的表面光洁度提供了有价值的指导。
{"title":"Effect of Surface Finishes on the Microstructure and Shear-Speed-Dependent Mechanical Properties of Sn-Ag-Cu-Based Solder Joints","authors":"Jiajun Wang,&nbsp;Min Shang,&nbsp;Xiaobin Luo,&nbsp;Qin Wang,&nbsp;Hongbo Lu,&nbsp;Lingyan Zhao,&nbsp;Yunpeng Wang,&nbsp;Haitao Ma,&nbsp;Xiaojing Wang,&nbsp;David P. Yan","doi":"10.1007/s11664-025-12484-4","DOIUrl":"10.1007/s11664-025-12484-4","url":null,"abstract":"<div><p>This study systematically investigates the effects of surface finishes on the interfacial microstructure and shear-speed-dependent mechanical properties of Sn-Ag-Cu (SAC)-based solder joints. Two lead-free alloys, SAC305 and Innolot, were paired with four surface finishes, organic solderability preservative (OSP), immersion tin (ImSn), immersion silver (ImAg), and electroless nickel/immersion gold (ENIG), to assess their influence on intermetallic compound (IMC) formation, shear strength, and fracture behavior. Distinct IMC growth kinetics and morphologies were observed: OSP promoted rapid IMC growth with scalloped structures, while ENIG produced thinner, planar IMCs due to diffusion suppression. Innolot’s multi-element composition further refined IMC grains compared to SAC305. Shear testing across five speeds (0.01–1000 mm/s) revealed strong dependencies on both surface finish and strain rate. SAC305 joints followed a shear strength trend of ENIG &gt; OSP &gt; ImAg &gt; ImSn, whereas Innolot exhibited more complex behavior, with OSP performing best at low speeds and ENIG at high speeds. Both alloys showed strain-rate strengthening, with SAC305 being more sensitive. Fracture modes shifted from ductile (bulk solder) to brittle (IMC interface) with increasing shear speed, with Innolot transitioning earlier. ENIG consistently outperformed other finishes by combining thin IMCs and robust adhesion, making it highly suitable for harsh environments. These findings offer valuable guidance for optimizing surface finishes in high-reliability electronic packaging.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 2","pages":"1551 - 1569"},"PeriodicalIF":2.5,"publicationDate":"2025-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146007097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Preparation of Highly Stable Coal-Based Carbon Capacitor Materials by Physical and Chemical Sequential Activation and Organic Acid Post-deashing Method 物理化学顺序活化和有机酸后脱灰法制备高稳定性煤基炭电容器材料
IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-10-25 DOI: 10.1007/s11664-025-12488-0
Shanxin Xiong, Qingyong Duan, Fengyan Lv, Yukun Zhang, Hepeng Lu, Nana Yang, Shuai Zhang, Shuaishuai Bai, Xiaoqin Wang, Runlan Zhang, Hong Wang, Zhen Li

Coal-based active carbon (CAC) is an ideal supercapacitor (SC) electrode material owing to its rich microporosity, high surface area, and excellent capacitance. Taixi anthracite (TXA) features high fixed-carbon content (<8% ash) and a well-ordered microporous structure. This renders TXA critical for CAC-based SC electrodes. For non-biomass SC electrodes, ash content management is critical. In this study, CAC was obtained by physical and chemical sequential activation of TXA using H2O and KOH. Ultralow-ash D-CAC was prepared via oxalic acid deashing of CAC, with process conditions optimized. CAC’s extensive porosity enables efficient oxalic acid penetration and deashing. D-CAC demonstrated superior specific capacitance and cycling stability. D-CAC had the largest specific surface area of 2106 m2/g and a total pore volume of 1.03 cm3/g. D-CAC also exhibited a high specific capacitance of 339.4 F/g at a current density of 0.5 A/g. After 10,000 charge and discharge cycles, the specific capacitance showed a 99.1% retention rate. Furthermore, assembled symmetric SC exhibited a high specific capacitance of 156 F/g at 0.5 A/g and an energy density value of 6.25 Wh/kg with a power density of 12,500 W/kg. This organic acid (OA) deashing strategy enables the production of high-performance capacitive carbon.

煤基活性炭(CAC)具有微孔率高、比表面积大、电容性能优异等优点,是一种理想的超级电容器电极材料。太西无烟煤具有固定碳含量高(灰分8%)、微孔结构有序等特点。这使得TXA对基于cac的SC电极至关重要。对于非生物质SC电极,灰分管理是至关重要的。在本研究中,通过水和KOH对TXA进行物理和化学顺序活化得到CAC。采用草酸法对CAC进行脱灰,并对工艺条件进行优化,制备了超低灰分D-CAC。CAC具有广泛的孔隙度,能够实现草酸的高效渗透和脱灰。D-CAC表现出优异的比电容和循环稳定性。D-CAC的比表面积最大,为2106 m2/g,总孔容为1.03 cm3/g。在0.5 a /g电流密度下,D-CAC具有339.4 F/g的高比电容。经过10000次充放电循环后,比电容保持率达到99.1%。此外,组装的对称SC在0.5 a /g下具有156 F/g的高比电容和6.25 Wh/kg的能量密度值,功率密度为12,500 W/kg。这种有机酸(OA)脱灰策略使高性能电容碳的生产成为可能。
{"title":"Preparation of Highly Stable Coal-Based Carbon Capacitor Materials by Physical and Chemical Sequential Activation and Organic Acid Post-deashing Method","authors":"Shanxin Xiong,&nbsp;Qingyong Duan,&nbsp;Fengyan Lv,&nbsp;Yukun Zhang,&nbsp;Hepeng Lu,&nbsp;Nana Yang,&nbsp;Shuai Zhang,&nbsp;Shuaishuai Bai,&nbsp;Xiaoqin Wang,&nbsp;Runlan Zhang,&nbsp;Hong Wang,&nbsp;Zhen Li","doi":"10.1007/s11664-025-12488-0","DOIUrl":"10.1007/s11664-025-12488-0","url":null,"abstract":"<div><p>Coal-based active carbon (CAC) is an ideal supercapacitor (SC) electrode material owing to its rich microporosity, high surface area, and excellent capacitance. Taixi anthracite (TXA) features high fixed-carbon content (&lt;8% ash) and a well-ordered microporous structure. This renders TXA critical for CAC-based SC electrodes. For non-biomass SC electrodes, ash content management is critical. In this study, CAC was obtained by physical and chemical sequential activation of TXA using H<sub>2</sub>O and KOH. Ultralow-ash D-CAC was prepared via oxalic acid deashing of CAC, with process conditions optimized. CAC’s extensive porosity enables efficient oxalic acid penetration and deashing. D-CAC demonstrated superior specific capacitance and cycling stability. D-CAC had the largest specific surface area of 2106 m<sup>2</sup>/g and a total pore volume of 1.03 cm<sup>3</sup>/g. D-CAC also exhibited a high specific capacitance of 339.4 F/g at a current density of 0.5 A/g. After 10,000 charge and discharge cycles, the specific capacitance showed a 99.1% retention rate. Furthermore, assembled symmetric SC exhibited a high specific capacitance of 156 F/g at 0.5 A/g and an energy density value of 6.25 Wh/kg with a power density of 12,500 W/kg. This organic acid (OA) deashing strategy enables the production of high-performance capacitive carbon.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 12","pages":"11215 - 11228"},"PeriodicalIF":2.5,"publicationDate":"2025-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145479702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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Journal of Electronic Materials
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