Pub Date : 2025-12-12DOI: 10.1007/s11664-025-12576-1
Beauty Kumari, Ankit Kumar, Amit Kumar, Kamal Prasad
A (Na1/2Bi1/2)TiO3/polyvinylidene fluoride (PVDF) (0-3 type) composite with a volume fraction of 0.25/0.75 was fabricated via the melt-mixing technique, and its temperature-dependent energy harvesting characteristics were investigated using electromagnetic radiation (EMR) as a non-contact measurement technique. X-ray diffraction analysis confirmed the successful formation of (Na1/2Bi1/2)TiO3 (NBT) and its composite with PVDF, whereas scanning electron microscopy revealed that NBT ceramic particles, ranging in size from 0.1 μm to 3 μm, were uniformly dispersed throughout the PVDF matrix. The electric modulus and dielectric studies indicated non-Debye relaxation, with charge transport characterized as a hopping type. As the temperature increased, both EMR and DC voltage exhibited a significant rise up to 90°C and subsequently showed a slight decline. Moreover, an increase in DC voltage (0.098–0.415 V) was observed with higher capacitor values. These findings, along with the apparent porosity (< 2%), low water absorption (< 0.091 wt.%), and tangent loss (~10−2) values, suggest the potential for integrating the composite into self-sustaining, low-power electronic systems. Consequently, the 0-3 type 0.25NBT/0.75PVDF composite presents a promising non-lead option for temperature-dependent energy harvesting and sensing/detection applications.
{"title":"Temperature-Dependent Energy Harvesting from 0.25(Na1/2Bi1/2)TiO3/0.75PVDF Composite","authors":"Beauty Kumari, Ankit Kumar, Amit Kumar, Kamal Prasad","doi":"10.1007/s11664-025-12576-1","DOIUrl":"10.1007/s11664-025-12576-1","url":null,"abstract":"<div><p>A (Na<sub>1/2</sub>Bi<sub>1/2</sub>)TiO<sub>3</sub>/polyvinylidene fluoride (PVDF) (0-3 type) composite with a volume fraction of 0.25/0.75 was fabricated via the melt-mixing technique, and its temperature-dependent energy harvesting characteristics were investigated using electromagnetic radiation (EMR) as a non-contact measurement technique. X-ray diffraction analysis confirmed the successful formation of (Na<sub>1/2</sub>Bi<sub>1/2</sub>)TiO<sub>3</sub> (NBT) and its composite with PVDF, whereas scanning electron microscopy revealed that NBT ceramic particles, ranging in size from 0.1 μm to 3 μm, were uniformly dispersed throughout the PVDF matrix. The electric modulus and dielectric studies indicated non-Debye relaxation, with charge transport characterized as a hopping type. As the temperature increased, both EMR and DC voltage exhibited a significant rise up to 90°C and subsequently showed a slight decline. Moreover, an increase in DC voltage (0.098–0.415 V) was observed with higher capacitor values. These findings, along with the apparent porosity (< 2%), low water absorption (< 0.091 wt.%), and tangent loss (~10<sup>−2</sup>) values, suggest the potential for integrating the composite into self-sustaining, low-power electronic systems. Consequently, the 0-3 type 0.25NBT/0.75PVDF composite presents a promising non-lead option for temperature-dependent energy harvesting and sensing/detection applications.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 2","pages":"1818 - 1828"},"PeriodicalIF":2.5,"publicationDate":"2025-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146007021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-11DOI: 10.1007/s11664-025-12389-2
Karumuri Venkanna, C. H. Prashanth, Abhijit Nayak, P. Rambabu, Bheema Lingam Chittari, Krishnamurthy Jyothinagaram
We used density functional theory and Monte Carlo simulations to look into the magnetic, electronic, and magnetocaloric (MC) properties of a half-metallic Co2NbAl Heusler alloy. Phonon calculations confirmed its dynamical stability. Antisite disorder induced a half-metallic ground state, with a 0.62 eV bandgap in the minority spin channel and metallic behaviour in the majority spin channel. The magnetism primarily originates from Co atoms (1.10 μB), with a minor induced moment on Nb atoms (0.06 μB), while Al remains non-magnetic, resulting in a total moment of 2.03 μB/f.u. This value exceeds the experimentally reported 1.35 μB, likely due to A2-type antisite disorder. Monte Carlo simulations estimated the Curie temperature (TC) at 348 K, closely matching the experimental value of 383 K, while the mean-field approximation significantly overestimated it at 541.8 K. The relative cooling power (RCP), derived from isothermal magnetic entropy changes, was 11.9 J kg−1 at 0–1 T and 114.6 J kg−1 at 0–9 T magnetic field changes, respectively. Co2NbAl retained its half-metallicity under pressures up to 10 GPa. Beyond 2 GPa, the magnetic moment and magnetic exchange interaction strengths declined significantly, while the energy gap steadily decreased. The magnetic entropy change (–ΔSm) increased, TC decreased, and RCP increased nonlinearly. This showed that Co2NbAl has a pressure-sensitive MC response.
{"title":"Study of the Magnetic, Electronic and Magnetocaloric Properties of Half-Metallic Co2NbAl Using First-Principles and Monte Carlo Simulations","authors":"Karumuri Venkanna, C. H. Prashanth, Abhijit Nayak, P. Rambabu, Bheema Lingam Chittari, Krishnamurthy Jyothinagaram","doi":"10.1007/s11664-025-12389-2","DOIUrl":"10.1007/s11664-025-12389-2","url":null,"abstract":"<div><p>We used density functional theory and Monte Carlo simulations to look into the magnetic, electronic, and magnetocaloric (MC) properties of a half-metallic Co<sub>2</sub>NbAl Heusler alloy. Phonon calculations confirmed its dynamical stability. Antisite disorder induced a half-metallic ground state, with a 0.62 eV bandgap in the minority spin channel and metallic behaviour in the majority spin channel. The magnetism primarily originates from Co atoms (1.10 μ<sub>B</sub>), with a minor induced moment on Nb atoms (0.06 μ<sub>B</sub>), while Al remains non-magnetic, resulting in a total moment of 2.03 μ<sub>B</sub>/f.u. This value exceeds the experimentally reported 1.35 μ<sub>B</sub>, likely due to A2-type antisite disorder. Monte Carlo simulations estimated the Curie temperature (<i>T</i><sub>C</sub>) at 348 K, closely matching the experimental value of 383 K, while the mean-field approximation significantly overestimated it at 541.8 K. The relative cooling power (RCP), derived from isothermal magnetic entropy changes, was 11.9 J kg<sup>−1</sup> at 0–1 T and 114.6 J kg<sup>−1</sup> at 0–9 T magnetic field changes, respectively. Co<sub>2</sub>NbAl retained its half-metallicity under pressures up to 10 GPa. Beyond 2 GPa, the magnetic moment and magnetic exchange interaction strengths declined significantly, while the energy gap steadily decreased. The magnetic entropy change (–Δ<i>S</i><sub>m</sub>) increased, <i>T</i><sub>C</sub> decreased, and RCP increased nonlinearly. This showed that Co<sub>2</sub>NbAl has a pressure-sensitive MC response.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 2","pages":"2029 - 2045"},"PeriodicalIF":2.5,"publicationDate":"2025-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146007023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-11DOI: 10.1007/s11664-025-12592-1
Nandita Sharma, Bibek Chettri, Dikcha Chhetri, Sanat Kr. Das, Pronita Chettri, Bikash Sharma
Two-dimensional materials such as MoS2 have garnered considerable attention as possible anode candidates for next-generation sodium-ion batteries (NIBs), to satisfy the growing need for energy storage devices. In this study, density functional theory (DFT) is used to examine the potential of MoS2 as an anode material for NIBs. Ab initio molecular dynamics (AIMD) simulations verified the thermal and dynamic stability of pristine MoS2, demonstrating structural stability in the range of 300–400 K. It was determined that the maximum adsorption energy (Ead) for the adsorption of eight Na atoms is −12.74 eV. Furthermore, the exothermic adsorption process is confirmed by the formation energy (Ef) of −5.70 eV for eight Na atoms on the MoS2 monolayer. When a single Na atom is adsorbed, the electronic band structure of pristine MoS2 rises slightly from 1.73 to 1.75 eV. However, the bandgap shrinks and eventually disappears upon the adsorption of two Na atoms, signifying a shift to metallic behaviour and enhanced electronic conductivity. Its potential for large-scale energy storage devices is further highlighted by its high theoretical capacity of 1339 mAh g−1. The estimated average open-circuit voltage (OCV) of 1.59 V confirms that Na-MoS2 is a suitable anode material for NIBs. Furthermore, a diffusion barrier of 0.8 eV indicates moderate Na-ion mobility, which is advantageous for real-world battery applications. Overall, MoS2 is a good option for next-generation NIB technology due to its strong Na–MoS2 interaction and tunable electronic properties. Therefore, this work lays the groundwork for future research and development of MoS2-based anode materials.
{"title":"Enhanced Stability, Electronic Properties, and Energy Storage Potential of Na-Adsorbed MoS2 as an Anode Material for Na-ion Batteries: A DFT Study","authors":"Nandita Sharma, Bibek Chettri, Dikcha Chhetri, Sanat Kr. Das, Pronita Chettri, Bikash Sharma","doi":"10.1007/s11664-025-12592-1","DOIUrl":"10.1007/s11664-025-12592-1","url":null,"abstract":"<div><p>Two-dimensional materials such as MoS<sub>2</sub> have garnered considerable attention as possible anode candidates for next-generation sodium-ion batteries (NIBs), to satisfy the growing need for energy storage devices. In this study, density functional theory (DFT) is used to examine the potential of MoS<sub>2</sub> as an anode material for NIBs. Ab initio molecular dynamics (AIMD) simulations verified the thermal and dynamic stability of pristine MoS<sub>2</sub>, demonstrating structural stability in the range of 300–400 K. It was determined that the maximum adsorption energy (<i>E</i><sub>ad</sub>) for the adsorption of eight Na atoms is −12.74 eV. Furthermore, the exothermic adsorption process is confirmed by the formation energy (<i>E</i><sub>f</sub>) of −5.70 eV for eight Na atoms on the MoS<sub>2</sub> monolayer. When a single Na atom is adsorbed, the electronic band structure of pristine MoS<sub>2</sub> rises slightly from 1.73 to 1.75 eV. However, the bandgap shrinks and eventually disappears upon the adsorption of two Na atoms, signifying a shift to metallic behaviour and enhanced electronic conductivity. Its potential for large-scale energy storage devices is further highlighted by its high theoretical capacity of 1339 mAh g<sup>−1</sup>. The estimated average open-circuit voltage (OCV) of 1.59 V confirms that Na-MoS<sub>2</sub> is a suitable anode material for NIBs. Furthermore, a diffusion barrier of 0.8 eV indicates moderate Na-ion mobility, which is advantageous for real-world battery applications. Overall, MoS<sub>2</sub> is a good option for next-generation NIB technology due to its strong Na–MoS<sub>2</sub> interaction and tunable electronic properties. Therefore, this work lays the groundwork for future research and development of MoS<sub>2</sub>-based anode materials.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 2","pages":"2046 - 2060"},"PeriodicalIF":2.5,"publicationDate":"2025-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146007135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Silicon/expanded graphite (Si/EG) composites with nano-silicon-to-EG mass ratios of 1:2 (sample 1) and 1:1 (sample 2) were fabricated via freeze-drying and high-temperature vacuum heat treatment. The nano-silicon was loaded onto the surface of expanded graphite (EG) through the organic cracking of carbon. Initial charge capacity values of 922.9 mAh/g and 1269.9 mAh/g were obtained for sample 1 and sample 2, with initial coulombic efficiency of 78.45% and 79.83%, respectively, while the pure nano-silicon sample was only 49.81%. The reversible capacity after 260 cycles for sample 1 and sample 2 was 526.9 mAh/g and 920.8 mAh/g, with capacity retention ratios of 57.09% and 72.51%, respectively. Moreover, the cycling stability of sample 2 was found to be superior to that of sample 1 due to a more uniform distribution of higher silicon loading on the EG surface, which facilitates the formation of a stable solid electrolyte interface (SEI) film rich in LiF components. The incorporation of EG significantly improves the electrical conductivity and rate capability of silicon-based materials. The Si/EG composite demonstrates excellent high-rate charge/discharge ability due to excellent electrochemical kinetic performance. At current density of 1 A/g, the capacity of sample 1 and sample 2 reached 748.7 mAh/g and 1038.7 mAh/g, with capacity retention rates of 79.7% and 80.2%, respectively. Thus, the design of mass ratios for nano-silicon and EG is critical for obtaining a Si/EG composite with excellent cycle stability and high-rate performance.
{"title":"Expanded Graphite Supported Nano-silicon Composite for High-Performance Anode Materials in Lithium-ion Batteries","authors":"Weichao Zhang, Wenping Liu, Xiaoxu Lei, Huarui Xu, Guisheng Zhu, Yunyun Zhao, Ying Luo, Kunpeng Jiang","doi":"10.1007/s11664-025-12580-5","DOIUrl":"10.1007/s11664-025-12580-5","url":null,"abstract":"<div><p>Silicon/expanded graphite (Si/EG) composites with nano-silicon-to-EG mass ratios of 1:2 (sample 1) and 1:1 (sample 2) were fabricated via freeze-drying and high-temperature vacuum heat treatment. The nano-silicon was loaded onto the surface of expanded graphite (EG) through the organic cracking of carbon. Initial charge capacity values of 922.9 mAh/g and 1269.9 mAh/g were obtained for sample 1 and sample 2, with initial coulombic efficiency of 78.45% and 79.83%, respectively, while the pure nano-silicon sample was only 49.81%. The reversible capacity after 260 cycles for sample 1 and sample 2 was 526.9 mAh/g and 920.8 mAh/g, with capacity retention ratios of 57.09% and 72.51%, respectively. Moreover, the cycling stability of sample 2 was found to be superior to that of sample 1 due to a more uniform distribution of higher silicon loading on the EG surface, which facilitates the formation of a stable solid electrolyte interface (SEI) film rich in LiF components. The incorporation of EG significantly improves the electrical conductivity and rate capability of silicon-based materials. The Si/EG composite demonstrates excellent high-rate charge/discharge ability due to excellent electrochemical kinetic performance. At current density of 1 A/g, the capacity of sample 1 and sample 2 reached 748.7 mAh/g and 1038.7 mAh/g, with capacity retention rates of 79.7% and 80.2%, respectively. Thus, the design of mass ratios for nano-silicon and EG is critical for obtaining a Si/EG composite with excellent cycle stability and high-rate performance.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 2","pages":"1804 - 1817"},"PeriodicalIF":2.5,"publicationDate":"2025-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146007125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-10DOI: 10.1007/s11664-025-12588-x
Ghazala Yunus, Khizar Jamil, Najmul Hassan, Arbab Mohammad Toufiq, Attaur Rahman, Lubna Aamir, Taghreed F. Altamimi, Alaa Nowara, Muhammad Tauseef Qureshi
This study explores the structural, electronic, and opto-magnetic properties of Y0.25Mn0.75Fe2O4 with Y = Co, Ni, Cr. The lattice parameters were calculated through structural optimizations utilizing functional Perdew–Burke–Ernzerhof–generalized gradient approximation (PBE-GGA), enabling the understanding of the materials’ performance. For spinel ferrite MnFe2O4, the electronic structure has been investigated using density functional theory (DFT), DFT + U (Hubbard on-site Coulomb interaction, U) and DFT + U + V (Hubbard U extension that includes inter-site Coulomb interaction, V). The superior accuracy and significant improvements in electronic properties have been demonstrated by DFT + U + V approach in comparison with GGA and DFT + U + V. Therefore, to explore the electronic and magnetic behavior of YxMn1−xFe2O4, a DFT + U + V framework has been used. This approach provides a more accurate description of the electronic and magnetic properties of manganese–ferrites systems. The energy band gap values of 0.38 eV were calculated for MnFe2O4, 0.44 eV for Co0.25Mn0.75Fe2O4, 0.13 eV for Ni0.25Mn0.75Fe2O4, and 0.24 eV for Cr0.25Mn0.75Fe2O4, which clearly demonstrate the electronic modulation achieved through selective doping. Similarly, partial magnetic moments, interstitial magnetic contributions, and net magnetization analyses were carried out using spin-polarized (SP)-DFT calculations to explain the overall magnetic behavior. The effect of doping on magnetic properties has been observed and is evident by the net magnetic moment (μnet) values, calculated to be 6.92 μB, 6.05 μB, 5.41 μB, and 6.67 μB for MnFe2O4, Co0.25Mn0.75Fe2O4, Ni0.25Mn0.75Fe2O4, and Cr0.25Mn0.75Fe2O4, respectively. This successful modification in electronic structure and magnetic behavior through selective doping of MnFe2O4 demonstrates the potential for advanced applications in spintronics and magnetic sensors with enhanced data storage.
本研究探索了Y = Co, Ni, Cr的Y0.25Mn0.75Fe2O4的结构,电子和光磁性质。利用泛函perdu - burke - ernzerhof广义梯度近似(PBE-GGA)进行结构优化计算晶格参数,从而了解材料的性能。利用密度泛函理论(DFT)、DFT + U (Hubbard -site Coulomb相互作用,U)和DFT + U + V (Hubbard - U扩展,包括intersite - Coulomb相互作用,V)研究了尖晶石铁素体MnFe2O4的电子结构。与GGA和DFT + U + V方法相比,DFT + U + V方法具有更高的精度和显著的电子性能改善。因此,为了探索YxMn1−xFe2O4的电子和磁性行为,我们使用了DFT + U + V框架。这种方法可以更准确地描述锰铁氧体系统的电子和磁性能。MnFe2O4的能带隙值为0.38 eV, Co0.25Mn0.75Fe2O4的能带隙值为0.44 eV, Ni0.25Mn0.75Fe2O4的能带隙值为0.13 eV, Cr0.25Mn0.75Fe2O4的能带隙值为0.24 eV,这清楚地表明通过选择性掺杂实现了电子调制。同样,利用自旋极化(SP)-DFT计算进行了部分磁矩、间隙磁贡献和净磁化分析,以解释整体磁性行为。MnFe2O4、Co0.25Mn0.75Fe2O4、Ni0.25Mn0.75Fe2O4和Cr0.25Mn0.75Fe2O4的净磁矩(μnet)分别为6.92 μB、6.05 μB、5.41 μB和6.67 μB,可见掺杂对磁性能的影响。通过选择性掺杂MnFe2O4成功地改变了电子结构和磁性行为,这表明了自旋电子学和具有增强数据存储的磁传感器的先进应用潜力。
{"title":"First-Principles Study of the Structural, Electronic, and Magnetic Properties of Y-Substituted MnFe2O4 (Y = Co, Ni, Cr)","authors":"Ghazala Yunus, Khizar Jamil, Najmul Hassan, Arbab Mohammad Toufiq, Attaur Rahman, Lubna Aamir, Taghreed F. Altamimi, Alaa Nowara, Muhammad Tauseef Qureshi","doi":"10.1007/s11664-025-12588-x","DOIUrl":"10.1007/s11664-025-12588-x","url":null,"abstract":"<div><p>This study explores the structural, electronic, and opto-magnetic properties of Y<sub>0.25</sub>Mn<sub>0.75</sub>Fe<sub>2</sub>O<sub>4</sub> with Y = Co, Ni, Cr. The lattice parameters were calculated through structural optimizations utilizing functional Perdew–Burke–Ernzerhof–generalized gradient approximation (PBE-GGA), enabling the understanding of the materials’ performance. For spinel ferrite MnFe<sub>2</sub>O<sub>4</sub>, the electronic structure has been investigated using density functional theory (DFT), DFT + U (Hubbard on-site Coulomb interaction, U) and DFT + U + V (Hubbard U extension that includes inter-site Coulomb interaction, V). The superior accuracy and significant improvements in electronic properties have been demonstrated by DFT + U + V approach in comparison with GGA and DFT + U + V. Therefore, to explore the electronic and magnetic behavior of Y<sub>x</sub>Mn<sub>1−x</sub>Fe<sub>2</sub>O<sub>4</sub>, a DFT + U + V framework has been used. This approach provides a more accurate description of the electronic and magnetic properties of manganese–ferrites systems. The energy band gap values of 0.38 eV were calculated for MnFe<sub>2</sub>O<sub>4</sub>, 0.44 eV for Co<sub>0.25</sub>Mn<sub>0.75</sub>Fe<sub>2</sub>O<sub>4</sub>, 0.13 eV for Ni<sub>0.25</sub>Mn<sub>0.75</sub>Fe<sub>2</sub>O<sub>4</sub>, and 0.24 eV for Cr<sub>0.25</sub>Mn<sub>0.75</sub>Fe<sub>2</sub>O<sub>4</sub>, which clearly demonstrate the electronic modulation achieved through selective doping. Similarly, partial magnetic moments, interstitial magnetic contributions, and net magnetization analyses were carried out using spin-polarized (SP)-DFT calculations to explain the overall magnetic behavior. The effect of doping on magnetic properties has been observed and is evident by the net magnetic moment (<i>μ</i><sub>net</sub>) values, calculated to be 6.92 <i>μ</i><sub>B</sub>, 6.05 <i>μ</i><sub>B</sub>, 5.41 <i>μ</i><sub>B</sub>, and 6.67 <i>μ</i><sub>B</sub> for MnFe<sub>2</sub>O<sub>4</sub>, Co<sub>0.25</sub>Mn<sub>0.75</sub>Fe<sub>2</sub>O<sub>4</sub>, Ni<sub>0.25</sub>Mn<sub>0.75</sub>Fe<sub>2</sub>O<sub>4</sub>, and Cr<sub>0.25</sub>Mn<sub>0.75</sub>Fe<sub>2</sub>O<sub>4</sub>, respectively. This successful modification in electronic structure and magnetic behavior through selective doping of MnFe<sub>2</sub>O<sub>4</sub> demonstrates the potential for advanced applications in spintronics and magnetic sensors with enhanced data storage.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 2","pages":"2015 - 2028"},"PeriodicalIF":2.5,"publicationDate":"2025-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146007170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-09DOI: 10.1007/s11664-025-12225-7
Mohaned Habeb Ahmed Al-Khudhur, Arash Babakhanian
This research underscores the capabilities of modified pencil graphite electrodes (PGE) in the electrochemical detection of ascorbic acid. The innovative design of the PGE/chitosan/thiophanate-methyl sensor, combined with the advantages of cyclic voltammetry and square wave voltammetry, offers a promising approach for developing sensitive and selective electrochemical sensors. The surface nano-modification of PGE with chitosan and thiophanate-methyl was confirmed through scanning electron microscopy. The parameters related to electrocatalysis were determined to be: the electron transfer rate constant (log Ks = 2.98), the charge transfer coefficient (α = 0.87), and the surface concentration of electroactive species (Γ = 1.13 × 10-7 mmol/cm2). A linear correlation was identified for ascorbic acid concentrations between 40 and 380 nanomolars (nM), with a limit of detection established at 13.29 nM. The reproducibility of the modified PGE/chitosan/thiophanate-methyl assay, assessed at a concentration of 140 nM ascorbic acid using five constructed electrodes, resulted in a relative standard deviation (RSD) of 4.85%. The repeatability of the developed sensor for measuring 140 nM of ascorbic acid, determined through 12 measurements with a single constructed electrode, produced a relative standard deviation (RSD%) of 4.68% (146.57 ± 6.87). The electrochemical sensor, in contrast to conventional techniques, allows for rapid analysis, reduced expenses, and supports on-site testing. These sensors are essential tools for the analysis of human blood serum and pharmaceutical samples, as they are not affected by significant side effect interference.