Pub Date : 2024-09-16DOI: 10.1007/s11664-024-11366-5
André Siewe Kamegni, Igor Lashkevych
A theoretical prediction of the contribution to the thermo-electromotive force (thermo-EMF) of a thermocouple due to the minority charge carriers in both legs is presented. This prediction is made on the assumption that, at any time, the electrical conductivity of the majority charge carriers (sigma _M) remains very large compared to the electrical conductivity of the minority carriers (sigma _m) ((sigma _Mgg sigma _m)). The expression has also been analyzed in order to find strategies to reduce its negative impact on the thermo-EMF of the thermocouple. Finally, calculations were carried out in the case of the thermocouple made of silicon thermoelements. The results show that the presence of minority carriers in the thermocouple legs can either positively or negatively affect the generated thermo-EMF. Whenever the contribution is negative, its magnitude may be reduced by widening the bandgap of the N-type leg and/or narrowing that of the p-type leg, adjusting the length of the legs, or intensifying recombinations on the surfaces of the P-type leg
本文从理论上预测了热电偶的热电动势(thermo-EMF)是由两条腿上的少数电荷载流子造成的。这一预测是基于以下假设做出的:在任何时候,多数电荷载流子的电导率(sigma _M)与少数载流子的电导率(sigma _Mggsigma _m)相比都非常大。还对该表达式进行了分析,以便找到减少其对热电偶热电磁场负面影响的策略。最后,对硅热电偶进行了计算。结果表明,热电偶支脚中少数载流子的存在会对产生的热电磁场产生积极或消极的影响。如果是负面影响,则可以通过拓宽 N 型引脚的带隙和/或缩小 P 型引脚的带隙、调整引脚长度或加强 P 型引脚表面的重组来降低影响程度。
{"title":"Assessment of the Contribution of Minority Carriers to the Thermo-electromotive Force of Thermoelectric Generators in the Case Where the Electrical Conductivity of the Majority Carriers Remains Very Large Compared to that of the Minority Carriers","authors":"André Siewe Kamegni, Igor Lashkevych","doi":"10.1007/s11664-024-11366-5","DOIUrl":"https://doi.org/10.1007/s11664-024-11366-5","url":null,"abstract":"<p>A theoretical prediction of the contribution to the thermo-electromotive force (thermo-EMF) of a thermocouple due to the minority charge carriers in both legs is presented. This prediction is made on the assumption that, at any time, the electrical conductivity of the majority charge carriers <span>(sigma _M)</span> remains very large compared to the electrical conductivity of the minority carriers <span>(sigma _m)</span> (<span>(sigma _Mgg sigma _m)</span>). The expression has also been analyzed in order to find strategies to reduce its negative impact on the thermo-EMF of the thermocouple. Finally, calculations were carried out in the case of the thermocouple made of silicon thermoelements. The results show that the presence of minority carriers in the thermocouple legs can either positively or negatively affect the generated thermo-EMF. Whenever the contribution is negative, its magnitude may be reduced by widening the bandgap of the <i>N</i>-type leg and/or narrowing that of the <i>p</i>-type leg, adjusting the length of the legs, or intensifying recombinations on the surfaces of the <i>P</i>-type leg</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"10 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142248513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-16DOI: 10.1007/s11664-024-11429-7
Wentao Li
The existence of a variety of two-dimensional (2D) carbon allotropes with different carbon frameworks has provided an unprecedented platform to explore novel properties and potential applications beyond graphene. In this work, the strain effects on the structural, electronic, and thermal transport properties of the γ-graphyne and twin graphene sheets have been systematically clarified through first-principles calculations. Regardless of the geometrical similarities of the two considered 2D carbon allotropes, our results indicate that the acetylenic linkages in the γ-graphyne and the AA-stacked aromatic rings in the twin graphene are capable of resulting in the notable deviations in their electronic and thermal transport properties, as well as the strain-dependent behaviors. Both of the two sheets possess an intrinsic semiconducting nature with a tunable direct bandgap that depends on the biaxial strains. The thermal conductivity of the γ-graphyne is significantly suppressed compared to the twin graphene counterpart. Moreover, the heat transfer of the two sheets can be further enhanced by the tensile strains, and a dramatic increase can be obtained in the strained γ-graphyne sheet. Thus, the effectively tunable electronic and thermal transport properties revealed in this work imply the great potential of the two 2D carbon allotropes, and the comparative study also uncovers the structural effect of the carbon networks on their novel properties and strain responses.
{"title":"Effect of Biaxial Strain on Structural, Electronic, and Thermal Transport Properties of Twin Graphene: A Comparative Study with γ-graphyne","authors":"Wentao Li","doi":"10.1007/s11664-024-11429-7","DOIUrl":"https://doi.org/10.1007/s11664-024-11429-7","url":null,"abstract":"<p>The existence of a variety of two-dimensional (2D) carbon allotropes with different carbon frameworks has provided an unprecedented platform to explore novel properties and potential applications beyond graphene. In this work, the strain effects on the structural, electronic, and thermal transport properties of the <i>γ</i>-graphyne and twin graphene sheets have been systematically clarified through first-principles calculations. Regardless of the geometrical similarities of the two considered 2D carbon allotropes, our results indicate that the acetylenic linkages in the <i>γ</i>-graphyne and the AA-stacked aromatic rings in the twin graphene are capable of resulting in the notable deviations in their electronic and thermal transport properties, as well as the strain-dependent behaviors. Both of the two sheets possess an intrinsic semiconducting nature with a tunable direct bandgap that depends on the biaxial strains. The thermal conductivity of the <i>γ</i>-graphyne is significantly suppressed compared to the twin graphene counterpart. Moreover, the heat transfer of the two sheets can be further enhanced by the tensile strains, and a dramatic increase can be obtained in the strained <i>γ</i>-graphyne sheet. Thus, the effectively tunable electronic and thermal transport properties revealed in this work imply the great potential of the two 2D carbon allotropes, and the comparative study also uncovers the structural effect of the carbon networks on their novel properties and strain responses.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"14 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142248515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-14DOI: 10.1007/s11664-024-11427-9
Júlio Fernando Sousa de Carvalho, Renan Matos Monção, Ediones Maciel de Sousa, Cleânio da Luz Lima, Carla Laize dos Santos Cruz Costa, Ramón Raudel Pena Garcia, Michelle Cequeira Feitor, Thércio Henrique de Carvalho Costa, Maxwell Santana Libório, Rômulo Ribeiro Magalhães de Sousa
Due to its elemental abundance, nontoxic nature, and suitable optical-electrical properties, copper oxide is a valuable p-type semiconductor for photovoltaic (PV) applications. However, synthesizing copper oxide films for PV devices with a band gap close to the Shockley–Queisser limit (1.4 eV) using a one-step deposition process is important for maximum efficiency and synthesis simplification. In this work, cathodic cage plasma deposition (CCPD) of copper oxide (CuO + Cu2O) films on glass was performed to evaluate the microstructural, morphological, chemical, and band gap changes as a function of treatment time (2 h, 3 h, 4 h, and 5 h). The samples were analyzed by scanning electron microscopy, energy-dispersive spectroscopy, x-ray diffraction, and Raman spectroscopy to identify the morphology, chemical composition, and crystalline phases of the deposited films, and diffuse reflectance spectroscopy was used to calculate the band gap width. The films showed characteristics of absorbing material in the visible region with band gap values from 1.43 eV to 1.5 eV. However, the sample treated for 3 h had a compact coating with a thickness of 1.46 µm and band gap energy of 1.43 eV, showing the applicability of the CCPD technique for synthesizing copper oxide absorber layers with an optimum band gap in a single deposition step.
氧化铜元素丰富、无毒,而且具有合适的光电特性,因此是光伏(PV)应用中一种重要的 p 型半导体。然而,使用一步沉积工艺为光伏设备合成带隙接近肖克利-奎塞尔极限(1.4 eV)的氧化铜薄膜,对于实现最高效率和简化合成非常重要。在这项工作中,对玻璃上的氧化铜(CuO + Cu2O)薄膜进行了阴极笼等离子体沉积(CCPD),以评估微观结构、形态、化学和带隙变化与处理时间(2 小时、3 小时、4 小时和 5 小时)的函数关系。样品通过扫描电子显微镜、能量色散光谱、X 射线衍射和拉曼光谱进行分析,以确定沉积薄膜的形态、化学成分和结晶相,并利用漫反射光谱计算带隙宽度。薄膜在可见光区域显示出吸收材料的特征,带隙值在 1.43 eV 至 1.5 eV 之间。然而,处理 3 小时的样品具有厚度为 1.46 µm、带隙能为 1.43 eV 的致密涂层,这表明 CCPD 技术适用于在单一沉积步骤中合成具有最佳带隙的氧化铜吸收层。
{"title":"Influence of Treatment Time on the Synthesis of Copper Oxide Semiconductor Films by Cathode Cage Plasma Deposition","authors":"Júlio Fernando Sousa de Carvalho, Renan Matos Monção, Ediones Maciel de Sousa, Cleânio da Luz Lima, Carla Laize dos Santos Cruz Costa, Ramón Raudel Pena Garcia, Michelle Cequeira Feitor, Thércio Henrique de Carvalho Costa, Maxwell Santana Libório, Rômulo Ribeiro Magalhães de Sousa","doi":"10.1007/s11664-024-11427-9","DOIUrl":"https://doi.org/10.1007/s11664-024-11427-9","url":null,"abstract":"<p>Due to its elemental abundance, nontoxic nature, and suitable optical-electrical properties, copper oxide is a valuable <i>p</i>-type semiconductor for photovoltaic (PV) applications. However, synthesizing copper oxide films for PV devices with a band gap close to the Shockley–Queisser limit (1.4 eV) using a one-step deposition process is important for maximum efficiency and synthesis simplification. In this work, cathodic cage plasma deposition (CCPD) of copper oxide (CuO + Cu<sub>2</sub>O) films on glass was performed to evaluate the microstructural, morphological, chemical, and band gap changes as a function of treatment time (2 h, 3 h, 4 h, and 5 h). The samples were analyzed by scanning electron microscopy, energy-dispersive spectroscopy, x-ray diffraction, and Raman spectroscopy to identify the morphology, chemical composition, and crystalline phases of the deposited films, and diffuse reflectance spectroscopy was used to calculate the band gap width. The films showed characteristics of absorbing material in the visible region with band gap values from 1.43 eV to 1.5 eV. However, the sample treated for 3 h had a compact coating with a thickness of 1.46 µm and band gap energy of 1.43 eV, showing the applicability of the CCPD technique for synthesizing copper oxide absorber layers with an optimum band gap in a single deposition step.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"4 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142248551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-14DOI: 10.1007/s11664-024-11419-9
Nidhi Sheoran, Sourabh Sharma, Mukesh Sheoran, Vinod Kumar, Ashok Kumar, O. P. Thakur
Nano-size spinel ferrite CoFe2O4 (CFO), ferroelectric BaTiO3 (BTO), and their nanocomposites BTO@CFO (BTO nanoparticles are added during the synthesis of CFO) and CFO@BTO (CFO nanoparticles are added during the synthesis of BTO) were synthesized using a combination of chemical co-precipitation and sol–gel routes, respectively. The phase formation and crystallinity of the bare CFO and BTO and their nanocomposites were verified via x-ray diffraction (XRD) patterns. High-resolution transmission electron microscopy (HRTEM) revealed the formation of the nanocomposites. Magnetization measurements confirmed the ferromagnetic behavior of all the samples except BTO, in which superposition of a weak ferromagnetic and diamagnetic response occurred due to its nanostructure. Magnetization versus temperature (M–T plot) measurements showed an anomaly near the ferroelectric-to-paraelectric phase transition of BTO. Also, the dielectric constant (ε′) and loss tangent (tanδ) with respect to frequency (102–106 Hz) and temperature (300–700 K) were examined. The ε′–T curve of the nanocomposites exhibited an anomaly at the same temperature as observed in the M–T plot, indicating the inherent magnetoelectric coupling in the nanocomposites. The energy storage properties of BTO and the nanocomposites were examined via P–E loop analysis and confirmed that the CFO@BTO sample exhibits maximum energy storage efficiency.
{"title":"Structural, Magnetic, Dielectric, and Ferroelectric Properties of CoFe2O4-BaTiO3 Nanocomposites","authors":"Nidhi Sheoran, Sourabh Sharma, Mukesh Sheoran, Vinod Kumar, Ashok Kumar, O. P. Thakur","doi":"10.1007/s11664-024-11419-9","DOIUrl":"https://doi.org/10.1007/s11664-024-11419-9","url":null,"abstract":"<p>Nano-size spinel ferrite CoFe<sub>2</sub>O<sub>4</sub> (CFO), ferroelectric BaTiO<sub>3</sub> (BTO), and their nanocomposites BTO@CFO (BTO nanoparticles are added during the synthesis of CFO) and CFO@BTO (CFO nanoparticles are added during the synthesis of BTO) were synthesized using a combination of chemical co-precipitation and sol–gel routes, respectively. The phase formation and crystallinity of the bare CFO and BTO and their nanocomposites were verified via x-ray diffraction (XRD) patterns. High-resolution transmission electron microscopy (HRTEM) revealed the formation of the nanocomposites. Magnetization measurements confirmed the ferromagnetic behavior of all the samples except BTO, in which superposition of a weak ferromagnetic and diamagnetic response occurred due to its nanostructure. Magnetization versus temperature (<i>M</i>–<i>T</i> plot) measurements showed an anomaly near the ferroelectric-to-paraelectric phase transition of BTO. Also, the dielectric constant (<i>ε</i>′) and loss tangent (tan<i>δ</i>) with respect to frequency (10<sup>2</sup>–10<sup>6</sup> Hz) and temperature (300–700 K) were examined. The <i>ε</i>′–<i>T</i> curve of the nanocomposites exhibited an anomaly at the same temperature as observed in the <i>M</i>–<i>T</i> plot, indicating the inherent magnetoelectric coupling in the nanocomposites. The energy storage properties of BTO and the nanocomposites were examined via <i>P</i>–<i>E</i> loop analysis and confirmed that the CFO@BTO sample exhibits maximum energy storage efficiency.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"3 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142248552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-12DOI: 10.1007/s11664-024-11408-y
Atika Ayad, Elhassan Benhsina, Abdelqader El Guerraf, Souad El Hajjaji
Semiconductors, with their exceptional properties, have diverse applications across fields such as photovoltaics, sensing, and catalysis. In the present study, nickel pyro-vanadate compounds of high purity and homogeneity, with the chemical formula A2NiV2O7 (where A = Na, Ag), were synthesized under precisely controlled stoichiometric conditions. The primary focus is to investigate the optical and electronic properties of these compounds using a combination of experimental techniques and theoretical modeling. Initially, insights into the chemical structure and morphology of the synthesized semiconductor were obtained through powder x-ray diffraction (PXRD), Fourier-transform infrared spectroscopy (FTIR), and scanning electron microscopy (SEM). A2NiV2O7 were found to be homogeneous, crystalline in nature, and isotypic with Κ2CoV2O7, exhibiting alternating layers of NiV2O7 and Ag/Na. Moreover, absorption spectra obtained from UV–Vis diffuse reflectance spectroscopy (DRS) showed direct optical bandgaps of 1.83 eV for Na2NiV2O7 and 1.92 eV for Ag2NiV2O7, affirming their semiconductor properties. Further characterization was performed using density functional theory (DFT) and hybrid-DFT methods. These advanced techniques provide detailed understanding of the electronic structure and properties across different sodium–silver ratios. The computed electronic structures demonstrate the separation of the conduction band (CB) and valence band (VB) around the Fermi level, with bandgaps of 0.44 eV and 1.76 eV for Na2NiV2O7, and 0.56 eV and 1.60 eV for Ag2NiV2O7, as determined using the Perdew–Burke–Ernzerhof (PBE) and DFT+U methods, respectively. This comprehensive investigation offers valuable insights into the optical and electronic dynamics of nickel pyro-vanadate compounds, establishing a foundation for their potential applications in various fields, including optoelectronics, photocatalysis, and energy storage.
Graphical abstract
半导体以其优异的性能在光伏、传感和催化等领域有着广泛的应用。本研究在精确控制的化学计量条件下合成了化学式为 A2NiV2O7(其中 A = Na、Ag)的高纯度、高均匀度的钒酸镍化合物。主要重点是利用实验技术和理论建模相结合的方法研究这些化合物的光学和电子特性。首先,通过粉末 X 射线衍射 (PXRD)、傅立叶变换红外光谱 (FTIR) 和扫描电子显微镜 (SEM),深入了解了合成半导体的化学结构和形态。研究发现,A2NiV2O7 是均质的结晶体,与 Κ2CoV2O7 同型,呈现出 NiV2O7 和 Ag/Na 的交替层。此外,紫外可见漫反射光谱(DRS)获得的吸收光谱显示,Na2NiV2O7 和 Ag2NiV2O7 的直接光带隙分别为 1.83 eV 和 1.92 eV,这证实了它们的半导体特性。利用密度泛函理论(DFT)和混合-DFT 方法对它们进行了进一步表征。通过这些先进的技术,可以详细了解不同钠银比的电子结构和特性。计算得出的电子结构表明,在费米级附近存在导带(CB)和价带(VB)分离,使用 Perdew-Burke-Ernzerhof (PBE) 和 DFT+U 方法测定的 Na2NiV2O7 带隙分别为 0.44 eV 和 1.76 eV,Ag2NiV2O7 带隙分别为 0.56 eV 和 1.60 eV。这项全面的研究为了解钒酸镍化合物的光学和电子动力学提供了宝贵的见解,为它们在光电子学、光催化和能量存储等各个领域的潜在应用奠定了基础。
{"title":"Synthesis and Optical-Electronic Characterization of Nickel Pyro-Vanadate A2NiV2O7 (A = Na, Ag) Semiconductors: Experimental, DFT, and Hybrid-DFT Approaches","authors":"Atika Ayad, Elhassan Benhsina, Abdelqader El Guerraf, Souad El Hajjaji","doi":"10.1007/s11664-024-11408-y","DOIUrl":"https://doi.org/10.1007/s11664-024-11408-y","url":null,"abstract":"<p>Semiconductors, with their exceptional properties, have diverse applications across fields such as photovoltaics, sensing, and catalysis. In the present study, nickel pyro-vanadate compounds of high purity and homogeneity, with the chemical formula A<sub>2</sub>NiV<sub>2</sub>O<sub>7</sub> (where <i>A</i> = Na, Ag), were synthesized under precisely controlled stoichiometric conditions. The primary focus is to investigate the optical and electronic properties of these compounds using a combination of experimental techniques and theoretical modeling. Initially, insights into the chemical structure and morphology of the synthesized semiconductor were obtained through powder x-ray diffraction (PXRD), Fourier-transform infrared spectroscopy (FTIR), and scanning electron microscopy (SEM). A<sub>2</sub>NiV<sub>2</sub>O<sub>7</sub> were found to be homogeneous, crystalline in nature, and isotypic with Κ<sub>2</sub>CoV<sub>2</sub>O<sub>7</sub>, exhibiting alternating layers of NiV<sub>2</sub>O<sub>7</sub> and Ag/Na. Moreover, absorption spectra obtained from UV–Vis diffuse reflectance spectroscopy (DRS) showed direct optical bandgaps of 1.83 eV for Na<sub>2</sub>NiV<sub>2</sub>O<sub>7</sub> and 1.92 eV for Ag<sub>2</sub>NiV<sub>2</sub>O<sub>7</sub>, affirming their semiconductor properties. Further characterization was performed using density functional theory (DFT) and hybrid-DFT methods. These advanced techniques provide detailed understanding of the electronic structure and properties across different sodium–silver ratios. The computed electronic structures demonstrate the separation of the conduction band (CB) and valence band (VB) around the Fermi level, with bandgaps of 0.44 eV and 1.76 eV for Na<sub>2</sub>NiV<sub>2</sub>O<sub>7</sub>, and 0.56 eV and 1.60 eV for Ag<sub>2</sub>NiV<sub>2</sub>O<sub>7</sub>, as determined using the Perdew–Burke–Ernzerhof (PBE) and DFT+U methods, respectively. This comprehensive investigation offers valuable insights into the optical and electronic dynamics of nickel pyro-vanadate compounds, establishing a foundation for their potential applications in various fields, including optoelectronics, photocatalysis, and energy storage.</p><h3 data-test=\"abstract-sub-heading\">Graphical abstract</h3>\u0000","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"52 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Cuprous oxide (Cu2O) thin films grown by radio-frequency magnetron sputtering were post-annealed at 700°C under various oxygen partial pressures (PO2). Reduction and oxidation of oxygen were found in thin films annealed under PO2 of 0.1 Pa and 2.0 Pa, respectively. We investigated the photoluminescence characteristics of the Cu2O thin films measured at low temperature (30 K) and room temperature (300 K). When post-annealed at PO2 of 0.3 Pa and 0.7 Pa, Cu2O films presented dominant PL lines originating from transitions of excitons and doubly charged oxygen vacancies at low temperature, and solely excitonic recombination at room temperature. The temperature-dependent exciton spectra were well modeled in terms of phonon-assisted recombination of ortho-excitons. On the other hand, a broad luminescence band around 2.2 eV dominated in oxygen-deficient and over-oxidized Cu2O thin films. By comparing the results of grazing-incident x-ray diffraction and luminescence spectra, we believe that the origin of this band, however, involves extrinsic bands induced by structural imperfections.
通过射频磁控溅射法生长的氧化亚铜(Cu2O)薄膜在不同氧分压(PO2)条件下于 700°C 进行后退火。在 0.1 Pa 和 2.0 Pa 的氧分压下退火的薄膜中分别出现了氧的还原和氧化。我们研究了在低温(30 K)和室温(300 K)下测量的 Cu2O 薄膜的光致发光特性。当在 0.3 Pa 和 0.7 Pa 的 PO2 下进行后退火时,Cu2O 薄膜在低温下呈现出源于激子和双电荷氧空位跃迁的主要光致发光线,而在室温下则完全呈现出激子重组的光致发光线。与温度相关的激子光谱很好地模拟了正激子的声子辅助重组。另一方面,在缺氧和过度氧化的 Cu2O 薄膜中,2.2 eV 附近的宽发光带占主导地位。通过比较掠入式 X 射线衍射和发光光谱的结果,我们认为该发光带的起源是由结构缺陷引起的外发光带。
{"title":"Photoluminescence Characteristics of Post-annealed Cu2O Thin Films","authors":"Chin-Hau Chia, Shih-Hao Su, Yu-Min Hu, Jau-Wern Chiou, Chin-Chung Yu, Sheng-Rui Jian","doi":"10.1007/s11664-024-11416-y","DOIUrl":"https://doi.org/10.1007/s11664-024-11416-y","url":null,"abstract":"<p>Cuprous oxide (Cu<sub>2</sub>O) thin films grown by radio-frequency magnetron sputtering were post-annealed at 700°C under various oxygen partial pressures (PO<sub>2</sub>). Reduction and oxidation of oxygen were found in thin films annealed under PO<sub>2</sub> of 0.1 Pa and 2.0 Pa, respectively. We investigated the photoluminescence characteristics of the Cu<sub>2</sub>O thin films measured at low temperature (30 K) and room temperature (300 K). When post-annealed at PO<sub>2</sub> of 0.3 Pa and 0.7 Pa, Cu<sub>2</sub>O films presented dominant PL lines originating from transitions of excitons and doubly charged oxygen vacancies at low temperature, and solely excitonic recombination at room temperature. The temperature-dependent exciton spectra were well modeled in terms of phonon-assisted recombination of ortho-excitons. On the other hand, a broad luminescence band around 2.2 eV dominated in oxygen-deficient and over-oxidized Cu<sub>2</sub>O thin films. By comparing the results of grazing-incident x-ray diffraction and luminescence spectra, we believe that the origin of this band, however, involves extrinsic bands induced by structural imperfections.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"87 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-12DOI: 10.1007/s11664-024-11411-3
Jyoti, Rajesh Kumar
In this paper, we study the effects of spinning speed on the electrical, optical, structural, morphological, and gas sensing properties of thin films deposited on glass substrates by sol–gel spin coating, using copper acetate dihydrate as the precursor. The deposition of the films was carried out at varying spinning speeds from 1500 rpm to 2500 rpm to achieve different thicknesses ranging from 157 nm to 470 nm, respectively. The results revealed that the resistivity of the films decreased from 75.5 Ω·m to 42.5 Ω·m with the decrease in spinning speed. X-ray diffraction (XRD) studies demonstrated that the crystallite size varied in the range of 18.14–27.48 nm. The band gap of the samples was found to vary from 2 eV to 1.69 eV, revealing that these samples were suitable for gas sensing applications. Field-emission scanning microscopy (FESEM) studies showed that the prepared samples were porous in nature and were suitable for H2S gas detection. The films were examined at different operating temperatures with different concentrations of H2S gas. The results showed that the response toward hydrogen sulfide gas varied with varying thickness of the samples. The CuO thin films showed the highest response toward hydrogen sulfide gas at a temperature of 25°C.
{"title":"Effect of Spin Speed on the Physical Characteristics of CuO Films Synthesized by Sol–Gel Spin Coating for H2S Gas Sensing","authors":"Jyoti, Rajesh Kumar","doi":"10.1007/s11664-024-11411-3","DOIUrl":"https://doi.org/10.1007/s11664-024-11411-3","url":null,"abstract":"<p>In this paper, we study the effects of spinning speed on the electrical, optical, structural, morphological, and gas sensing properties of thin films deposited on glass substrates by sol–gel spin coating, using copper acetate dihydrate as the precursor. The deposition of the films was carried out at varying spinning speeds from 1500 rpm to 2500 rpm to achieve different thicknesses ranging from 157 nm to 470 nm, respectively. The results revealed that the resistivity of the films decreased from 75.5 Ω·m to 42.5 Ω·m with the decrease in spinning speed. X-ray diffraction (XRD) studies demonstrated that the crystallite size varied in the range of 18.14–27.48 nm. The band gap of the samples was found to vary from 2 eV to 1.69 eV, revealing that these samples were suitable for gas sensing applications. Field-emission scanning microscopy (FESEM) studies showed that the prepared samples were porous in nature and were suitable for H<sub>2</sub>S gas detection. The films were examined at different operating temperatures with different concentrations of H<sub>2</sub>S gas. The results showed that the response toward hydrogen sulfide gas varied with varying thickness of the samples. The CuO thin films showed the highest response toward hydrogen sulfide gas at a temperature of 25°C.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"16 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-12DOI: 10.1007/s11664-024-11374-5
I. Soli, M. Zemzemi, B. Agoubi, O. Khaldi, K. Khirouni
The emergence of new functionalities in transition metal oxides and their interfaces poses an important challenge. Many recent discoveries regarding the polar/nonpolar interface between perovskite oxides open new avenues for modern applications. SrTiO3/LaCrO3 heterostructures are particularly intriguing due to a polar discontinuity along the [001] direction, giving rise to two distinct and controllable interface structures, TiO2-LaO and SrO-CrO2, which exhibit new and promising electronic and thermoelectric transport properties. Through a combination of first-principles simulations based on density functional theory and the Boltzmann transport equation, we have calculate and discuss the structural, electronic, valence band offset, and thermoelectric properties of SrTiO3, LaCrO3, and SrTiO3/LaCrO3 heterostructures. The temperature dependence of the Seebeck coefficient, electrical conductivity, electronic thermal conductivity, and figure of merit is determined. Furthermore, we highlight the effect of the interface between the polar perovskite LaCrO3 and the nonpolar SrTiO3(001) on the thermoelectric properties, wherein we observed a change in the metal–semiconductor transport behavior. These results constitute an important advancement in our understanding of the thermoelectric properties at polar/nonpolar perovskite oxide interfaces.
{"title":"Computational Modeling of Electronic, Valence Band Offset, and Thermoelectric Transport Properties of SrTiO3/LaCrO3 Heterostructures","authors":"I. Soli, M. Zemzemi, B. Agoubi, O. Khaldi, K. Khirouni","doi":"10.1007/s11664-024-11374-5","DOIUrl":"https://doi.org/10.1007/s11664-024-11374-5","url":null,"abstract":"<p>The emergence of new functionalities in transition metal oxides and their interfaces poses an important challenge. Many recent discoveries regarding the polar/nonpolar interface between perovskite oxides open new avenues for modern applications. SrTiO<sub>3</sub>/LaCrO<sub>3</sub> heterostructures are particularly intriguing due to a polar discontinuity along the [001] direction, giving rise to two distinct and controllable interface structures, TiO<sub>2</sub>-LaO and SrO-CrO<sub>2</sub>, which exhibit new and promising electronic and thermoelectric transport properties. Through a combination of first-principles simulations based on density functional theory and the Boltzmann transport equation, we have calculate and discuss the structural, electronic, valence band offset, and thermoelectric properties of SrTiO<sub>3</sub>, LaCrO<sub>3</sub>, and SrTiO<sub>3</sub>/LaCrO<sub>3</sub> heterostructures. The temperature dependence of the Seebeck coefficient, electrical conductivity, electronic thermal conductivity, and figure of merit is determined. Furthermore, we highlight the effect of the interface between the polar perovskite LaCrO<sub>3</sub> and the nonpolar SrTiO<sub>3</sub>(001) on the thermoelectric properties, wherein we observed a change in the metal–semiconductor transport behavior. These results constitute an important advancement in our understanding of the thermoelectric properties at polar/nonpolar perovskite oxide interfaces.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"34 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-12DOI: 10.1007/s11664-024-11426-w
Shilpa Rana, Bharti Singh
A triboelectric nanogenerator (TENG) working on a contact electrification and electrostatic induction principle is a promising energy source for fulfilling the energy demand of low power electronic devices by converting the ambient mechanical energy to useful electrical energy. Here, a polymer nanocomposite film-based triboelectric nanogenerator has been designed by embedding reduced graphene oxide (rGO) nanosheets in a polyvinylidene fluoride (PVDF) matrix as one of the friction layers. The PVDF nanocomposite film-based TENG was constructed and examined for structural, electrical, and surface properties with varied weight percentages of rGO nanofillers (0.0 wt%, 0.5 wt%, 1.0 wt%, 1.5 wt%, and 2.0 wt%). The experimental results demonstrate that the addition of rGO in a PVDF matrix considerably increased the output performance of the TENG device. The TENG device with 1.5 wt% of rGO can deliver the maximum output voltage and current of 95.9 V, and 16.8 μA, respectively, which are ~ 3 and ~ 7 times the voltage and current produced by pristine PVDF film-based TENG. The enhanced performance of the nanogenerator is attributed to the addition of conductive nanofillers in the polymer matrix which improves the surface charge density of polymer nanocomposite films by forming a conduction network, resulting in more effective charge transfer. Moreover, the output of the nanogenerator is stored in the capacitor and used to drive commercial LEDs, revealing the TENGs' potential applications for designing self-powered electronic devices.
{"title":"rGO-Embedded Polymer Nanocomposite Layer for Improved Performance of Triboelectric Nanogenerator","authors":"Shilpa Rana, Bharti Singh","doi":"10.1007/s11664-024-11426-w","DOIUrl":"https://doi.org/10.1007/s11664-024-11426-w","url":null,"abstract":"<p>A triboelectric nanogenerator (TENG) working on a contact electrification and electrostatic induction principle is a promising energy source for fulfilling the energy demand of low power electronic devices by converting the ambient mechanical energy to useful electrical energy. Here, a polymer nanocomposite film-based triboelectric nanogenerator has been designed by embedding reduced graphene oxide (rGO) nanosheets in a polyvinylidene fluoride (PVDF) matrix as one of the friction layers. The PVDF nanocomposite film-based TENG was constructed and examined for structural, electrical, and surface properties with varied weight percentages of rGO nanofillers (0.0 wt%, 0.5 wt%, 1.0 wt%, 1.5 wt%, and 2.0 wt%). The experimental results demonstrate that the addition of rGO in a PVDF matrix considerably increased the output performance of the TENG device. The TENG device with 1.5 wt% of rGO can deliver the maximum output voltage and current of 95.9 V, and 16.8 <i>μ</i>A, respectively, which are ~ 3 and ~ 7 times the voltage and current produced by pristine PVDF film-based TENG. The enhanced performance of the nanogenerator is attributed to the addition of conductive nanofillers in the polymer matrix which improves the surface charge density of polymer nanocomposite films by forming a conduction network, resulting in more effective charge transfer. Moreover, the output of the nanogenerator is stored in the capacitor and used to drive commercial LEDs, revealing the TENGs' potential applications for designing self-powered electronic devices.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"77 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-12DOI: 10.1007/s11664-024-11423-z
Yawu Wang, Yue Zhang, Zhichao Xu, Peng Huang, Chun-Yi Su
Recently discovered twisted and coiled polymer actuators (TCPAs) show huge potentials in the field of soft robots due to advantages of low cost, large deformation and force, high energy density, long life, compact size, and easy to drive. To realize practical applications of the TCPA in soft robots, the study on its dynamic modeling is necessary. However, the TCPA has an obvious hysteresis nonlinearity, bringing obstacles to its modeling. Although some hysteresis models for the TCPA have been established, the study on its rate-dependent hysteresis modeling is still insufficient. To address this issue, a compound model has been established, in which the thermomechanical model is developed by cascading the backlash-like model and a dynamic linear system to depict the relationship between the output force and temperature. In addition, a thermoelectric model has been developed based on the first law of thermodynamics, whose function is to depict the relationship between the temperature and excitation current. All fitness values in the model validation of the compound model are larger than 87.949%. Hence, the compound model has a good generalization performance.
{"title":"Compound Model of Twisted and Coiled Polymer Actuators Describing Relationship Between Output Force and Excitation Current","authors":"Yawu Wang, Yue Zhang, Zhichao Xu, Peng Huang, Chun-Yi Su","doi":"10.1007/s11664-024-11423-z","DOIUrl":"https://doi.org/10.1007/s11664-024-11423-z","url":null,"abstract":"<p>Recently discovered twisted and coiled polymer actuators (TCPAs) show huge potentials in the field of soft robots due to advantages of low cost, large deformation and force, high energy density, long life, compact size, and easy to drive. To realize practical applications of the TCPA in soft robots, the study on its dynamic modeling is necessary. However, the TCPA has an obvious hysteresis nonlinearity, bringing obstacles to its modeling. Although some hysteresis models for the TCPA have been established, the study on its rate-dependent hysteresis modeling is still insufficient. To address this issue, a compound model has been established, in which the thermomechanical model is developed by cascading the backlash-like model and a dynamic linear system to depict the relationship between the output force and temperature. In addition, a thermoelectric model has been developed based on the first law of thermodynamics, whose function is to depict the relationship between the temperature and excitation current. All fitness values in the model validation of the compound model are larger than 87.949%. Hence, the compound model has a good generalization performance.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}