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Assessment of the Contribution of Minority Carriers to the Thermo-electromotive Force of Thermoelectric Generators in the Case Where the Electrical Conductivity of the Majority Carriers Remains Very Large Compared to that of the Minority Carriers 在多数载流子的电导率与少数载流子的电导率相比仍然非常大的情况下评估少数载流子对热电发生器热电动势的贡献
IF 2.1 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-16 DOI: 10.1007/s11664-024-11366-5
André Siewe Kamegni, Igor Lashkevych

A theoretical prediction of the contribution to the thermo-electromotive force (thermo-EMF) of a thermocouple due to the minority charge carriers in both legs is presented. This prediction is made on the assumption that, at any time, the electrical conductivity of the majority charge carriers (sigma _M) remains very large compared to the electrical conductivity of the minority carriers (sigma _m) ((sigma _Mgg sigma _m)). The expression has also been analyzed in order to find strategies to reduce its negative impact on the thermo-EMF of the thermocouple. Finally, calculations were carried out in the case of the thermocouple made of silicon thermoelements. The results show that the presence of minority carriers in the thermocouple legs can either positively or negatively affect the generated thermo-EMF. Whenever the contribution is negative, its magnitude may be reduced by widening the bandgap of the N-type leg and/or narrowing that of the p-type leg, adjusting the length of the legs, or intensifying recombinations on the surfaces of the P-type leg

本文从理论上预测了热电偶的热电动势(thermo-EMF)是由两条腿上的少数电荷载流子造成的。这一预测是基于以下假设做出的:在任何时候,多数电荷载流子的电导率(sigma _M)与少数载流子的电导率(sigma _Mggsigma _m)相比都非常大。还对该表达式进行了分析,以便找到减少其对热电偶热电磁场负面影响的策略。最后,对硅热电偶进行了计算。结果表明,热电偶支脚中少数载流子的存在会对产生的热电磁场产生积极或消极的影响。如果是负面影响,则可以通过拓宽 N 型引脚的带隙和/或缩小 P 型引脚的带隙、调整引脚长度或加强 P 型引脚表面的重组来降低影响程度。
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引用次数: 0
Effect of Biaxial Strain on Structural, Electronic, and Thermal Transport Properties of Twin Graphene: A Comparative Study with γ-graphyne 双轴应变对双石墨烯结构、电子和热传输特性的影响:与 γ 石墨烯的比较研究
IF 2.1 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-16 DOI: 10.1007/s11664-024-11429-7
Wentao Li

The existence of a variety of two-dimensional (2D) carbon allotropes with different carbon frameworks has provided an unprecedented platform to explore novel properties and potential applications beyond graphene. In this work, the strain effects on the structural, electronic, and thermal transport properties of the γ-graphyne and twin graphene sheets have been systematically clarified through first-principles calculations. Regardless of the geometrical similarities of the two considered 2D carbon allotropes, our results indicate that the acetylenic linkages in the γ-graphyne and the AA-stacked aromatic rings in the twin graphene are capable of resulting in the notable deviations in their electronic and thermal transport properties, as well as the strain-dependent behaviors. Both of the two sheets possess an intrinsic semiconducting nature with a tunable direct bandgap that depends on the biaxial strains. The thermal conductivity of the γ-graphyne is significantly suppressed compared to the twin graphene counterpart. Moreover, the heat transfer of the two sheets can be further enhanced by the tensile strains, and a dramatic increase can be obtained in the strained γ-graphyne sheet. Thus, the effectively tunable electronic and thermal transport properties revealed in this work imply the great potential of the two 2D carbon allotropes, and the comparative study also uncovers the structural effect of the carbon networks on their novel properties and strain responses.

具有不同碳框架的各种二维(2D)碳同素异形体的存在为探索石墨烯以外的新特性和潜在应用提供了一个前所未有的平台。在这项研究中,我们通过第一原理计算系统地阐明了应变对γ-石墨烯和孪生石墨烯片的结构、电子和热传输特性的影响。尽管这两种二维碳同素异形体在几何上有相似之处,但我们的研究结果表明,γ-石墨烯中的乙炔基连接和孪生石墨烯中的AA叠层芳香环能够导致它们的电子和热传输特性出现显著偏差,并且具有应变依赖行为。这两片石墨烯都具有固有的半导体性质,其直接带隙可调,并取决于双轴应变。与孪生石墨烯相比,γ-石墨烯的热导率显著降低。此外,拉伸应变可进一步增强两片石墨烯的热传导,应变γ-石墨烯薄片的热传导率可大幅提高。因此,本研究揭示的可有效调谐的电子和热传输特性意味着这两种二维碳同素异形体具有巨大的潜力,对比研究还揭示了碳网络结构对其新特性和应变响应的影响。
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引用次数: 0
Influence of Treatment Time on the Synthesis of Copper Oxide Semiconductor Films by Cathode Cage Plasma Deposition 处理时间对阴极笼等离子体沉积法合成氧化铜半导体薄膜的影响
IF 2.1 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-14 DOI: 10.1007/s11664-024-11427-9
Júlio Fernando Sousa de Carvalho, Renan Matos Monção, Ediones Maciel de Sousa, Cleânio da Luz Lima, Carla Laize dos Santos Cruz Costa, Ramón Raudel Pena Garcia, Michelle Cequeira Feitor, Thércio Henrique de Carvalho Costa, Maxwell Santana Libório, Rômulo Ribeiro Magalhães de Sousa

Due to its elemental abundance, nontoxic nature, and suitable optical-electrical properties, copper oxide is a valuable p-type semiconductor for photovoltaic (PV) applications. However, synthesizing copper oxide films for PV devices with a band gap close to the Shockley–Queisser limit (1.4 eV) using a one-step deposition process is important for maximum efficiency and synthesis simplification. In this work, cathodic cage plasma deposition (CCPD) of copper oxide (CuO + Cu2O) films on glass was performed to evaluate the microstructural, morphological, chemical, and band gap changes as a function of treatment time (2 h, 3 h, 4 h, and 5 h). The samples were analyzed by scanning electron microscopy, energy-dispersive spectroscopy, x-ray diffraction, and Raman spectroscopy to identify the morphology, chemical composition, and crystalline phases of the deposited films, and diffuse reflectance spectroscopy was used to calculate the band gap width. The films showed characteristics of absorbing material in the visible region with band gap values from 1.43 eV to 1.5 eV. However, the sample treated for 3 h had a compact coating with a thickness of 1.46 µm and band gap energy of 1.43 eV, showing the applicability of the CCPD technique for synthesizing copper oxide absorber layers with an optimum band gap in a single deposition step.

氧化铜元素丰富、无毒,而且具有合适的光电特性,因此是光伏(PV)应用中一种重要的 p 型半导体。然而,使用一步沉积工艺为光伏设备合成带隙接近肖克利-奎塞尔极限(1.4 eV)的氧化铜薄膜,对于实现最高效率和简化合成非常重要。在这项工作中,对玻璃上的氧化铜(CuO + Cu2O)薄膜进行了阴极笼等离子体沉积(CCPD),以评估微观结构、形态、化学和带隙变化与处理时间(2 小时、3 小时、4 小时和 5 小时)的函数关系。样品通过扫描电子显微镜、能量色散光谱、X 射线衍射和拉曼光谱进行分析,以确定沉积薄膜的形态、化学成分和结晶相,并利用漫反射光谱计算带隙宽度。薄膜在可见光区域显示出吸收材料的特征,带隙值在 1.43 eV 至 1.5 eV 之间。然而,处理 3 小时的样品具有厚度为 1.46 µm、带隙能为 1.43 eV 的致密涂层,这表明 CCPD 技术适用于在单一沉积步骤中合成具有最佳带隙的氧化铜吸收层。
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引用次数: 0
Structural, Magnetic, Dielectric, and Ferroelectric Properties of CoFe2O4-BaTiO3 Nanocomposites CoFe2O4-BaTiO3 纳米复合材料的结构、磁性、介电和铁电特性
IF 2.1 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-14 DOI: 10.1007/s11664-024-11419-9
Nidhi Sheoran, Sourabh Sharma, Mukesh Sheoran, Vinod Kumar, Ashok Kumar, O. P. Thakur

Nano-size spinel ferrite CoFe2O4 (CFO), ferroelectric BaTiO3 (BTO), and their nanocomposites BTO@CFO (BTO nanoparticles are added during the synthesis of CFO) and CFO@BTO (CFO nanoparticles are added during the synthesis of BTO) were synthesized using a combination of chemical co-precipitation and sol–gel routes, respectively. The phase formation and crystallinity of the bare CFO and BTO and their nanocomposites were verified via x-ray diffraction (XRD) patterns. High-resolution transmission electron microscopy (HRTEM) revealed the formation of the nanocomposites. Magnetization measurements confirmed the ferromagnetic behavior of all the samples except BTO, in which superposition of a weak ferromagnetic and diamagnetic response occurred due to its nanostructure. Magnetization versus temperature (MT plot) measurements showed an anomaly near the ferroelectric-to-paraelectric phase transition of BTO. Also, the dielectric constant (ε′) and loss tangent (tanδ) with respect to frequency (102–106 Hz) and temperature (300–700 K) were examined. The ε′–T curve of the nanocomposites exhibited an anomaly at the same temperature as observed in the MT plot, indicating the inherent magnetoelectric coupling in the nanocomposites. The energy storage properties of BTO and the nanocomposites were examined via PE loop analysis and confirmed that the CFO@BTO sample exhibits maximum energy storage efficiency.

采用化学共沉淀和溶胶-凝胶相结合的方法,分别合成了纳米级尖晶石铁氧体 CoFe2O4(CFO)、铁电性 BaTiO3(BTO)及其纳米复合材料 BTO@CFO(在合成 CFO 时加入 BTO 纳米颗粒)和 CFO@BTO(在合成 BTO 时加入 CFO 纳米颗粒)。通过 X 射线衍射(XRD)图验证了裸 CFO 和 BTO 及其纳米复合材料的相形成和结晶度。高分辨率透射电子显微镜(HRTEM)显示了纳米复合材料的形成。磁化测量证实了所有样品的铁磁行为,但 BTO 除外,由于其纳米结构,出现了弱铁磁和二磁反应的叠加。磁化与温度的关系(M-T 图)测量结果显示,BTO 在铁电相向准电相转变附近出现异常。此外,还研究了介电常数(ε′)和损耗正切(tanδ)与频率(102-106 Hz)和温度(300-700 K)的关系。纳米复合材料的ε′-T 曲线在 M-T 图中观察到的相同温度下出现异常,表明纳米复合材料中存在固有的磁电耦合。通过 P-E 循环分析检验了 BTO 和纳米复合材料的储能特性,证实 CFO@BTO 样品具有最高的储能效率。
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引用次数: 0
Synthesis and Optical-Electronic Characterization of Nickel Pyro-Vanadate A2NiV2O7 (A = Na, Ag) Semiconductors: Experimental, DFT, and Hybrid-DFT Approaches 焦钒酸镍 A2NiV2O7 (A = Na, Ag) 半导体的合成与光电特性:实验、DFT 和混合DFT 方法
IF 2.1 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-12 DOI: 10.1007/s11664-024-11408-y
Atika Ayad, Elhassan Benhsina, Abdelqader El Guerraf, Souad El Hajjaji

Semiconductors, with their exceptional properties, have diverse applications across fields such as photovoltaics, sensing, and catalysis. In the present study, nickel pyro-vanadate compounds of high purity and homogeneity, with the chemical formula A2NiV2O7 (where A = Na, Ag), were synthesized under precisely controlled stoichiometric conditions. The primary focus is to investigate the optical and electronic properties of these compounds using a combination of experimental techniques and theoretical modeling. Initially, insights into the chemical structure and morphology of the synthesized semiconductor were obtained through powder x-ray diffraction (PXRD), Fourier-transform infrared spectroscopy (FTIR), and scanning electron microscopy (SEM). A2NiV2O7 were found to be homogeneous, crystalline in nature, and isotypic with Κ2CoV2O7, exhibiting alternating layers of NiV2O7 and Ag/Na. Moreover, absorption spectra obtained from UV–Vis diffuse reflectance spectroscopy (DRS) showed direct optical bandgaps of 1.83 eV for Na2NiV2O7 and 1.92 eV for Ag2NiV2O7, affirming their semiconductor properties. Further characterization was performed using density functional theory (DFT) and hybrid-DFT methods. These advanced techniques provide detailed understanding of the electronic structure and properties across different sodium–silver ratios. The computed electronic structures demonstrate the separation of the conduction band (CB) and valence band (VB) around the Fermi level, with bandgaps of 0.44 eV and 1.76 eV for Na2NiV2O7, and 0.56 eV and 1.60 eV for Ag2NiV2O7, as determined using the Perdew–Burke–Ernzerhof (PBE) and DFT+U methods, respectively. This comprehensive investigation offers valuable insights into the optical and electronic dynamics of nickel pyro-vanadate compounds, establishing a foundation for their potential applications in various fields, including optoelectronics, photocatalysis, and energy storage.

Graphical abstract

半导体以其优异的性能在光伏、传感和催化等领域有着广泛的应用。本研究在精确控制的化学计量条件下合成了化学式为 A2NiV2O7(其中 A = Na、Ag)的高纯度、高均匀度的钒酸镍化合物。主要重点是利用实验技术和理论建模相结合的方法研究这些化合物的光学和电子特性。首先,通过粉末 X 射线衍射 (PXRD)、傅立叶变换红外光谱 (FTIR) 和扫描电子显微镜 (SEM),深入了解了合成半导体的化学结构和形态。研究发现,A2NiV2O7 是均质的结晶体,与 Κ2CoV2O7 同型,呈现出 NiV2O7 和 Ag/Na 的交替层。此外,紫外可见漫反射光谱(DRS)获得的吸收光谱显示,Na2NiV2O7 和 Ag2NiV2O7 的直接光带隙分别为 1.83 eV 和 1.92 eV,这证实了它们的半导体特性。利用密度泛函理论(DFT)和混合-DFT 方法对它们进行了进一步表征。通过这些先进的技术,可以详细了解不同钠银比的电子结构和特性。计算得出的电子结构表明,在费米级附近存在导带(CB)和价带(VB)分离,使用 Perdew-Burke-Ernzerhof (PBE) 和 DFT+U 方法测定的 Na2NiV2O7 带隙分别为 0.44 eV 和 1.76 eV,Ag2NiV2O7 带隙分别为 0.56 eV 和 1.60 eV。这项全面的研究为了解钒酸镍化合物的光学和电子动力学提供了宝贵的见解,为它们在光电子学、光催化和能量存储等各个领域的潜在应用奠定了基础。
{"title":"Synthesis and Optical-Electronic Characterization of Nickel Pyro-Vanadate A2NiV2O7 (A = Na, Ag) Semiconductors: Experimental, DFT, and Hybrid-DFT Approaches","authors":"Atika Ayad, Elhassan Benhsina, Abdelqader El Guerraf, Souad El Hajjaji","doi":"10.1007/s11664-024-11408-y","DOIUrl":"https://doi.org/10.1007/s11664-024-11408-y","url":null,"abstract":"<p>Semiconductors, with their exceptional properties, have diverse applications across fields such as photovoltaics, sensing, and catalysis. In the present study, nickel pyro-vanadate compounds of high purity and homogeneity, with the chemical formula A<sub>2</sub>NiV<sub>2</sub>O<sub>7</sub> (where <i>A</i> = Na, Ag), were synthesized under precisely controlled stoichiometric conditions. The primary focus is to investigate the optical and electronic properties of these compounds using a combination of experimental techniques and theoretical modeling. Initially, insights into the chemical structure and morphology of the synthesized semiconductor were obtained through powder x-ray diffraction (PXRD), Fourier-transform infrared spectroscopy (FTIR), and scanning electron microscopy (SEM). A<sub>2</sub>NiV<sub>2</sub>O<sub>7</sub> were found to be homogeneous, crystalline in nature, and isotypic with Κ<sub>2</sub>CoV<sub>2</sub>O<sub>7</sub>, exhibiting alternating layers of NiV<sub>2</sub>O<sub>7</sub> and Ag/Na. Moreover, absorption spectra obtained from UV–Vis diffuse reflectance spectroscopy (DRS) showed direct optical bandgaps of 1.83 eV for Na<sub>2</sub>NiV<sub>2</sub>O<sub>7</sub> and 1.92 eV for Ag<sub>2</sub>NiV<sub>2</sub>O<sub>7</sub>, affirming their semiconductor properties. Further characterization was performed using density functional theory (DFT) and hybrid-DFT methods. These advanced techniques provide detailed understanding of the electronic structure and properties across different sodium–silver ratios. The computed electronic structures demonstrate the separation of the conduction band (CB) and valence band (VB) around the Fermi level, with bandgaps of 0.44 eV and 1.76 eV for Na<sub>2</sub>NiV<sub>2</sub>O<sub>7</sub>, and 0.56 eV and 1.60 eV for Ag<sub>2</sub>NiV<sub>2</sub>O<sub>7</sub>, as determined using the Perdew–Burke–Ernzerhof (PBE) and DFT+U methods, respectively. This comprehensive investigation offers valuable insights into the optical and electronic dynamics of nickel pyro-vanadate compounds, establishing a foundation for their potential applications in various fields, including optoelectronics, photocatalysis, and energy storage.</p><h3 data-test=\"abstract-sub-heading\">Graphical abstract</h3>\u0000","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"52 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoluminescence Characteristics of Post-annealed Cu2O Thin Films 退火后 Cu2O 薄膜的光致发光特性
IF 2.1 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-12 DOI: 10.1007/s11664-024-11416-y
Chin-Hau Chia, Shih-Hao Su, Yu-Min Hu, Jau-Wern Chiou, Chin-Chung Yu, Sheng-Rui Jian

Cuprous oxide (Cu2O) thin films grown by radio-frequency magnetron sputtering were post-annealed at 700°C under various oxygen partial pressures (PO2). Reduction and oxidation of oxygen were found in thin films annealed under PO2 of 0.1 Pa and 2.0 Pa, respectively. We investigated the photoluminescence characteristics of the Cu2O thin films measured at low temperature (30 K) and room temperature (300 K). When post-annealed at PO2 of 0.3 Pa and 0.7 Pa, Cu2O films presented dominant PL lines originating from transitions of excitons and doubly charged oxygen vacancies at low temperature, and solely excitonic recombination at room temperature. The temperature-dependent exciton spectra were well modeled in terms of phonon-assisted recombination of ortho-excitons. On the other hand, a broad luminescence band around 2.2 eV dominated in oxygen-deficient and over-oxidized Cu2O thin films. By comparing the results of grazing-incident x-ray diffraction and luminescence spectra, we believe that the origin of this band, however, involves extrinsic bands induced by structural imperfections.

通过射频磁控溅射法生长的氧化亚铜(Cu2O)薄膜在不同氧分压(PO2)条件下于 700°C 进行后退火。在 0.1 Pa 和 2.0 Pa 的氧分压下退火的薄膜中分别出现了氧的还原和氧化。我们研究了在低温(30 K)和室温(300 K)下测量的 Cu2O 薄膜的光致发光特性。当在 0.3 Pa 和 0.7 Pa 的 PO2 下进行后退火时,Cu2O 薄膜在低温下呈现出源于激子和双电荷氧空位跃迁的主要光致发光线,而在室温下则完全呈现出激子重组的光致发光线。与温度相关的激子光谱很好地模拟了正激子的声子辅助重组。另一方面,在缺氧和过度氧化的 Cu2O 薄膜中,2.2 eV 附近的宽发光带占主导地位。通过比较掠入式 X 射线衍射和发光光谱的结果,我们认为该发光带的起源是由结构缺陷引起的外发光带。
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引用次数: 0
Effect of Spin Speed on the Physical Characteristics of CuO Films Synthesized by Sol–Gel Spin Coating for H2S Gas Sensing 旋转速度对溶胶-凝胶旋转镀膜法合成的用于 H2S 气体传感的氧化铜薄膜物理特性的影响
IF 2.1 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-12 DOI: 10.1007/s11664-024-11411-3
Jyoti, Rajesh Kumar

In this paper, we study the effects of spinning speed on the electrical, optical, structural, morphological, and gas sensing properties of thin films deposited on glass substrates by sol–gel spin coating, using copper acetate dihydrate as the precursor. The deposition of the films was carried out at varying spinning speeds from 1500 rpm to 2500 rpm to achieve different thicknesses ranging from 157 nm to 470 nm, respectively. The results revealed that the resistivity of the films decreased from 75.5 Ω·m to 42.5 Ω·m with the decrease in spinning speed. X-ray diffraction (XRD) studies demonstrated that the crystallite size varied in the range of 18.14–27.48 nm. The band gap of the samples was found to vary from 2 eV to 1.69 eV, revealing that these samples were suitable for gas sensing applications. Field-emission scanning microscopy (FESEM) studies showed that the prepared samples were porous in nature and were suitable for H2S gas detection. The films were examined at different operating temperatures with different concentrations of H2S gas. The results showed that the response toward hydrogen sulfide gas varied with varying thickness of the samples. The CuO thin films showed the highest response toward hydrogen sulfide gas at a temperature of 25°C.

本文研究了以二水醋酸铜为前驱体,通过溶胶-凝胶旋涂法在玻璃基底上沉积的薄膜的电学、光学、结构、形貌和气体传感特性受旋涂速度的影响。薄膜的沉积是在 1500 rpm 至 2500 rpm 的不同旋转速度下进行的,厚度分别为 157 nm 至 470 nm。结果表明,随着旋转速度的降低,薄膜的电阻率从 75.5 Ω-m 降至 42.5 Ω-m。X 射线衍射 (XRD) 研究表明,结晶尺寸的变化范围为 18.14-27.48 nm。样品的带隙在 2 eV 至 1.69 eV 之间变化,表明这些样品适合用于气体传感。场发射扫描显微镜(FESEM)研究表明,制备的样品具有多孔性,适用于 H2S 气体检测。在不同的工作温度和不同浓度的 H2S 气体条件下对薄膜进行了检测。结果表明,对硫化氢气体的反应随样品厚度的变化而变化。在温度为 25°C 时,CuO 薄膜对硫化氢气体的反应最高。
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引用次数: 0
Computational Modeling of Electronic, Valence Band Offset, and Thermoelectric Transport Properties of SrTiO3/LaCrO3 Heterostructures SrTiO3/LaCrO3 异质结构的电子、价带偏移和热电传输特性的计算建模
IF 2.1 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-12 DOI: 10.1007/s11664-024-11374-5
I. Soli, M. Zemzemi, B. Agoubi, O. Khaldi, K. Khirouni

The emergence of new functionalities in transition metal oxides and their interfaces poses an important challenge. Many recent discoveries regarding the polar/nonpolar interface between perovskite oxides open new avenues for modern applications. SrTiO3/LaCrO3 heterostructures are particularly intriguing due to a polar discontinuity along the [001] direction, giving rise to two distinct and controllable interface structures, TiO2-LaO and SrO-CrO2, which exhibit new and promising electronic and thermoelectric transport properties. Through a combination of first-principles simulations based on density functional theory and the Boltzmann transport equation, we have calculate and discuss the structural, electronic, valence band offset, and thermoelectric properties of SrTiO3, LaCrO3, and SrTiO3/LaCrO3 heterostructures. The temperature dependence of the Seebeck coefficient, electrical conductivity, electronic thermal conductivity, and figure of merit is determined. Furthermore, we highlight the effect of the interface between the polar perovskite LaCrO3 and the nonpolar SrTiO3(001) on the thermoelectric properties, wherein we observed a change in the metal–semiconductor transport behavior. These results constitute an important advancement in our understanding of the thermoelectric properties at polar/nonpolar perovskite oxide interfaces.

过渡金属氧化物及其界面中新功能的出现是一项重要挑战。最近关于包晶氧化物之间极性/非极性界面的许多发现为现代应用开辟了新途径。SrTiO3/LaCrO3异质结构尤其引人入胜,因为它沿[001]方向存在极性不连续性,从而产生了两种截然不同且可控的界面结构--TiO2-LaO 和 SrO-CrO2,表现出新的、有前途的电子和热电传输特性。通过结合基于密度泛函理论和玻尔兹曼输运方程的第一性原理模拟,我们计算并讨论了 SrTiO3、LaCrO3 和 SrTiO3/LaCrO3 异质结构的结构、电子、价带偏移和热电性能。我们确定了塞贝克系数、电导率、电子热导率和优点系数的温度依赖性。此外,我们还强调了极性过氧化物 LaCrO3 和非极性 SrTiO3(001) 之间的界面对热电特性的影响,我们观察到金属-半导体传输行为发生了变化。这些结果是我们了解极性/非极性包晶氧化物界面热电性能的重要进展。
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引用次数: 0
rGO-Embedded Polymer Nanocomposite Layer for Improved Performance of Triboelectric Nanogenerator 嵌入 rGO 的聚合物纳米复合层可提高三电纳米发电机的性能
IF 2.1 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-12 DOI: 10.1007/s11664-024-11426-w
Shilpa Rana, Bharti Singh

A triboelectric nanogenerator (TENG) working on a contact electrification and electrostatic induction principle is a promising energy source for fulfilling the energy demand of low power electronic devices by converting the ambient mechanical energy to useful electrical energy. Here, a polymer nanocomposite film-based triboelectric nanogenerator has been designed by embedding reduced graphene oxide (rGO) nanosheets in a polyvinylidene fluoride (PVDF) matrix as one of the friction layers. The PVDF nanocomposite film-based TENG was constructed and examined for structural, electrical, and surface properties with varied weight percentages of rGO nanofillers (0.0 wt%, 0.5 wt%, 1.0 wt%, 1.5 wt%, and 2.0 wt%). The experimental results demonstrate that the addition of rGO in a PVDF matrix considerably increased the output performance of the TENG device. The TENG device with 1.5 wt% of rGO can deliver the maximum output voltage and current of 95.9 V, and 16.8 μA, respectively, which are ~ 3 and ~ 7 times the voltage and current produced by pristine PVDF film-based TENG. The enhanced performance of the nanogenerator is attributed to the addition of conductive nanofillers in the polymer matrix which improves the surface charge density of polymer nanocomposite films by forming a conduction network, resulting in more effective charge transfer. Moreover, the output of the nanogenerator is stored in the capacitor and used to drive commercial LEDs, revealing the TENGs' potential applications for designing self-powered electronic devices.

基于接触电化和静电感应原理的三电纳米发电机(TENG)可将环境机械能转化为有用的电能,是满足低功率电子设备能源需求的一种前景广阔的能源。在这里,通过将还原氧化石墨烯(rGO)纳米片嵌入作为摩擦层之一的聚偏二氟乙烯(PVDF)基体中,设计出了一种基于聚合物纳米复合薄膜的三电纳米发电机。我们构建了基于 PVDF 纳米复合薄膜的 TENG,并对不同重量百分比的 rGO 纳米填料(0.0 wt%、0.5 wt%、1.0 wt%、1.5 wt% 和 2.0 wt%)进行了结构、电气和表面性能测试。实验结果表明,在 PVDF 基体中添加 rGO 能显著提高 TENG 器件的输出性能。含有 1.5 wt% rGO 的 TENG 器件的最大输出电压和电流分别为 95.9 V 和 16.8 μA,分别是基于原始 PVDF 薄膜的 TENG 器件的 3 倍和 7 倍。纳米发电机性能的提高归功于在聚合物基体中添加了导电纳米填料,通过形成传导网络提高了聚合物纳米复合薄膜的表面电荷密度,从而实现了更有效的电荷转移。此外,纳米发电机的输出被储存在电容器中,用于驱动商用 LED,这揭示了 TENGs 在设计自供电电子设备方面的潜在应用。
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引用次数: 0
Compound Model of Twisted and Coiled Polymer Actuators Describing Relationship Between Output Force and Excitation Current 描述输出力与激励电流之间关系的扭曲和盘绕聚合物致动器复合模型
IF 2.1 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-12 DOI: 10.1007/s11664-024-11423-z
Yawu Wang, Yue Zhang, Zhichao Xu, Peng Huang, Chun-Yi Su

Recently discovered twisted and coiled polymer actuators (TCPAs) show huge potentials in the field of soft robots due to advantages of low cost, large deformation and force, high energy density, long life, compact size, and easy to drive. To realize practical applications of the TCPA in soft robots, the study on its dynamic modeling is necessary. However, the TCPA has an obvious hysteresis nonlinearity, bringing obstacles to its modeling. Although some hysteresis models for the TCPA have been established, the study on its rate-dependent hysteresis modeling is still insufficient. To address this issue, a compound model has been established, in which the thermomechanical model is developed by cascading the backlash-like model and a dynamic linear system to depict the relationship between the output force and temperature. In addition, a thermoelectric model has been developed based on the first law of thermodynamics, whose function is to depict the relationship between the temperature and excitation current. All fitness values in the model validation of the compound model are larger than 87.949%. Hence, the compound model has a good generalization performance.

最近发现的扭曲盘绕聚合物致动器(TCPA)具有成本低、变形和受力大、能量密度高、寿命长、体积小、易于驱动等优点,在软体机器人领域显示出巨大的潜力。为了实现 TCPA 在软体机器人中的实际应用,有必要对其动态模型进行研究。然而,TCPA 具有明显的滞后非线性,这给其建模带来了障碍。虽然已经建立了一些 TCPA 的滞后模型,但对其随速率变化的滞后模型的研究仍然不足。为了解决这个问题,我们建立了一个复合模型,其中热力学模型是通过级联反冲模型和动态线性系统来建立的,以描述输出力和温度之间的关系。此外,还根据热力学第一定律建立了热电模型,其功能是描述温度与激励电流之间的关系。在复合模型的模型验证中,所有拟合度值均大于 87.949%。因此,该复合模型具有良好的泛化性能。
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Journal of Electronic Materials
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