Pub Date : 2024-09-14DOI: 10.1007/s11664-024-11427-9
Júlio Fernando Sousa de Carvalho, Renan Matos Monção, Ediones Maciel de Sousa, Cleânio da Luz Lima, Carla Laize dos Santos Cruz Costa, Ramón Raudel Pena Garcia, Michelle Cequeira Feitor, Thércio Henrique de Carvalho Costa, Maxwell Santana Libório, Rômulo Ribeiro Magalhães de Sousa
Due to its elemental abundance, nontoxic nature, and suitable optical-electrical properties, copper oxide is a valuable p-type semiconductor for photovoltaic (PV) applications. However, synthesizing copper oxide films for PV devices with a band gap close to the Shockley–Queisser limit (1.4 eV) using a one-step deposition process is important for maximum efficiency and synthesis simplification. In this work, cathodic cage plasma deposition (CCPD) of copper oxide (CuO + Cu2O) films on glass was performed to evaluate the microstructural, morphological, chemical, and band gap changes as a function of treatment time (2 h, 3 h, 4 h, and 5 h). The samples were analyzed by scanning electron microscopy, energy-dispersive spectroscopy, x-ray diffraction, and Raman spectroscopy to identify the morphology, chemical composition, and crystalline phases of the deposited films, and diffuse reflectance spectroscopy was used to calculate the band gap width. The films showed characteristics of absorbing material in the visible region with band gap values from 1.43 eV to 1.5 eV. However, the sample treated for 3 h had a compact coating with a thickness of 1.46 µm and band gap energy of 1.43 eV, showing the applicability of the CCPD technique for synthesizing copper oxide absorber layers with an optimum band gap in a single deposition step.
氧化铜元素丰富、无毒,而且具有合适的光电特性,因此是光伏(PV)应用中一种重要的 p 型半导体。然而,使用一步沉积工艺为光伏设备合成带隙接近肖克利-奎塞尔极限(1.4 eV)的氧化铜薄膜,对于实现最高效率和简化合成非常重要。在这项工作中,对玻璃上的氧化铜(CuO + Cu2O)薄膜进行了阴极笼等离子体沉积(CCPD),以评估微观结构、形态、化学和带隙变化与处理时间(2 小时、3 小时、4 小时和 5 小时)的函数关系。样品通过扫描电子显微镜、能量色散光谱、X 射线衍射和拉曼光谱进行分析,以确定沉积薄膜的形态、化学成分和结晶相,并利用漫反射光谱计算带隙宽度。薄膜在可见光区域显示出吸收材料的特征,带隙值在 1.43 eV 至 1.5 eV 之间。然而,处理 3 小时的样品具有厚度为 1.46 µm、带隙能为 1.43 eV 的致密涂层,这表明 CCPD 技术适用于在单一沉积步骤中合成具有最佳带隙的氧化铜吸收层。
{"title":"Influence of Treatment Time on the Synthesis of Copper Oxide Semiconductor Films by Cathode Cage Plasma Deposition","authors":"Júlio Fernando Sousa de Carvalho, Renan Matos Monção, Ediones Maciel de Sousa, Cleânio da Luz Lima, Carla Laize dos Santos Cruz Costa, Ramón Raudel Pena Garcia, Michelle Cequeira Feitor, Thércio Henrique de Carvalho Costa, Maxwell Santana Libório, Rômulo Ribeiro Magalhães de Sousa","doi":"10.1007/s11664-024-11427-9","DOIUrl":"https://doi.org/10.1007/s11664-024-11427-9","url":null,"abstract":"<p>Due to its elemental abundance, nontoxic nature, and suitable optical-electrical properties, copper oxide is a valuable <i>p</i>-type semiconductor for photovoltaic (PV) applications. However, synthesizing copper oxide films for PV devices with a band gap close to the Shockley–Queisser limit (1.4 eV) using a one-step deposition process is important for maximum efficiency and synthesis simplification. In this work, cathodic cage plasma deposition (CCPD) of copper oxide (CuO + Cu<sub>2</sub>O) films on glass was performed to evaluate the microstructural, morphological, chemical, and band gap changes as a function of treatment time (2 h, 3 h, 4 h, and 5 h). The samples were analyzed by scanning electron microscopy, energy-dispersive spectroscopy, x-ray diffraction, and Raman spectroscopy to identify the morphology, chemical composition, and crystalline phases of the deposited films, and diffuse reflectance spectroscopy was used to calculate the band gap width. The films showed characteristics of absorbing material in the visible region with band gap values from 1.43 eV to 1.5 eV. However, the sample treated for 3 h had a compact coating with a thickness of 1.46 µm and band gap energy of 1.43 eV, showing the applicability of the CCPD technique for synthesizing copper oxide absorber layers with an optimum band gap in a single deposition step.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"4 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142248551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-14DOI: 10.1007/s11664-024-11419-9
Nidhi Sheoran, Sourabh Sharma, Mukesh Sheoran, Vinod Kumar, Ashok Kumar, O. P. Thakur
Nano-size spinel ferrite CoFe2O4 (CFO), ferroelectric BaTiO3 (BTO), and their nanocomposites BTO@CFO (BTO nanoparticles are added during the synthesis of CFO) and CFO@BTO (CFO nanoparticles are added during the synthesis of BTO) were synthesized using a combination of chemical co-precipitation and sol–gel routes, respectively. The phase formation and crystallinity of the bare CFO and BTO and their nanocomposites were verified via x-ray diffraction (XRD) patterns. High-resolution transmission electron microscopy (HRTEM) revealed the formation of the nanocomposites. Magnetization measurements confirmed the ferromagnetic behavior of all the samples except BTO, in which superposition of a weak ferromagnetic and diamagnetic response occurred due to its nanostructure. Magnetization versus temperature (M–T plot) measurements showed an anomaly near the ferroelectric-to-paraelectric phase transition of BTO. Also, the dielectric constant (ε′) and loss tangent (tanδ) with respect to frequency (102–106 Hz) and temperature (300–700 K) were examined. The ε′–T curve of the nanocomposites exhibited an anomaly at the same temperature as observed in the M–T plot, indicating the inherent magnetoelectric coupling in the nanocomposites. The energy storage properties of BTO and the nanocomposites were examined via P–E loop analysis and confirmed that the CFO@BTO sample exhibits maximum energy storage efficiency.
{"title":"Structural, Magnetic, Dielectric, and Ferroelectric Properties of CoFe2O4-BaTiO3 Nanocomposites","authors":"Nidhi Sheoran, Sourabh Sharma, Mukesh Sheoran, Vinod Kumar, Ashok Kumar, O. P. Thakur","doi":"10.1007/s11664-024-11419-9","DOIUrl":"https://doi.org/10.1007/s11664-024-11419-9","url":null,"abstract":"<p>Nano-size spinel ferrite CoFe<sub>2</sub>O<sub>4</sub> (CFO), ferroelectric BaTiO<sub>3</sub> (BTO), and their nanocomposites BTO@CFO (BTO nanoparticles are added during the synthesis of CFO) and CFO@BTO (CFO nanoparticles are added during the synthesis of BTO) were synthesized using a combination of chemical co-precipitation and sol–gel routes, respectively. The phase formation and crystallinity of the bare CFO and BTO and their nanocomposites were verified via x-ray diffraction (XRD) patterns. High-resolution transmission electron microscopy (HRTEM) revealed the formation of the nanocomposites. Magnetization measurements confirmed the ferromagnetic behavior of all the samples except BTO, in which superposition of a weak ferromagnetic and diamagnetic response occurred due to its nanostructure. Magnetization versus temperature (<i>M</i>–<i>T</i> plot) measurements showed an anomaly near the ferroelectric-to-paraelectric phase transition of BTO. Also, the dielectric constant (<i>ε</i>′) and loss tangent (tan<i>δ</i>) with respect to frequency (10<sup>2</sup>–10<sup>6</sup> Hz) and temperature (300–700 K) were examined. The <i>ε</i>′–<i>T</i> curve of the nanocomposites exhibited an anomaly at the same temperature as observed in the <i>M</i>–<i>T</i> plot, indicating the inherent magnetoelectric coupling in the nanocomposites. The energy storage properties of BTO and the nanocomposites were examined via <i>P</i>–<i>E</i> loop analysis and confirmed that the CFO@BTO sample exhibits maximum energy storage efficiency.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"3 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142248552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-12DOI: 10.1007/s11664-024-11408-y
Atika Ayad, Elhassan Benhsina, Abdelqader El Guerraf, Souad El Hajjaji
Semiconductors, with their exceptional properties, have diverse applications across fields such as photovoltaics, sensing, and catalysis. In the present study, nickel pyro-vanadate compounds of high purity and homogeneity, with the chemical formula A2NiV2O7 (where A = Na, Ag), were synthesized under precisely controlled stoichiometric conditions. The primary focus is to investigate the optical and electronic properties of these compounds using a combination of experimental techniques and theoretical modeling. Initially, insights into the chemical structure and morphology of the synthesized semiconductor were obtained through powder x-ray diffraction (PXRD), Fourier-transform infrared spectroscopy (FTIR), and scanning electron microscopy (SEM). A2NiV2O7 were found to be homogeneous, crystalline in nature, and isotypic with Κ2CoV2O7, exhibiting alternating layers of NiV2O7 and Ag/Na. Moreover, absorption spectra obtained from UV–Vis diffuse reflectance spectroscopy (DRS) showed direct optical bandgaps of 1.83 eV for Na2NiV2O7 and 1.92 eV for Ag2NiV2O7, affirming their semiconductor properties. Further characterization was performed using density functional theory (DFT) and hybrid-DFT methods. These advanced techniques provide detailed understanding of the electronic structure and properties across different sodium–silver ratios. The computed electronic structures demonstrate the separation of the conduction band (CB) and valence band (VB) around the Fermi level, with bandgaps of 0.44 eV and 1.76 eV for Na2NiV2O7, and 0.56 eV and 1.60 eV for Ag2NiV2O7, as determined using the Perdew–Burke–Ernzerhof (PBE) and DFT+U methods, respectively. This comprehensive investigation offers valuable insights into the optical and electronic dynamics of nickel pyro-vanadate compounds, establishing a foundation for their potential applications in various fields, including optoelectronics, photocatalysis, and energy storage.