Pub Date : 2006-01-01DOI: 10.1109/NEMS.2006.334902
Z. Fang, Z. Zhao, H. Zeng, Q. Wang, Haifeng Dong, Peng Guo, Yuguo Zhang
MEMS-based integrated temperature, humidity and pressure (THP) sensor has the advantages of small size, low cost, easy integration and is a highly advanced apparatus of identity, reliability and easy production. The principle and structure of the integrated THP sensor are analyzed in this paper in short, and it also provides the measuring methods and circuits in detail. The outcome of measurement verifies excellent performance of the integrated THP sensor. Based on the MEMS-based integrated (THP) sensor and relevant measurement circuit, an ultra low power consumption wireless sensor network node for environment monitoring was designed. The design consists of three major goals to enable experimentation: minimal power consumption, easy to use, and enhanced software and hardware robustness. What hardware components were selected and how integrated in order to achieve these goals is discussed in this paper. Using Silicon C8051F121 microcontroller, Chipcon IEEE 802.15.4-compliant radio CC2420 or CC1020, USB, RTC, the module power consumption is less than current platforms while providing better performance and greater throughput.
{"title":"Ultra-Low Power WSN Node with Integrated THP Sensor","authors":"Z. Fang, Z. Zhao, H. Zeng, Q. Wang, Haifeng Dong, Peng Guo, Yuguo Zhang","doi":"10.1109/NEMS.2006.334902","DOIUrl":"https://doi.org/10.1109/NEMS.2006.334902","url":null,"abstract":"MEMS-based integrated temperature, humidity and pressure (THP) sensor has the advantages of small size, low cost, easy integration and is a highly advanced apparatus of identity, reliability and easy production. The principle and structure of the integrated THP sensor are analyzed in this paper in short, and it also provides the measuring methods and circuits in detail. The outcome of measurement verifies excellent performance of the integrated THP sensor. Based on the MEMS-based integrated (THP) sensor and relevant measurement circuit, an ultra low power consumption wireless sensor network node for environment monitoring was designed. The design consists of three major goals to enable experimentation: minimal power consumption, easy to use, and enhanced software and hardware robustness. What hardware components were selected and how integrated in order to achieve these goals is discussed in this paper. Using Silicon C8051F121 microcontroller, Chipcon IEEE 802.15.4-compliant radio CC2420 or CC1020, USB, RTC, the module power consumption is less than current platforms while providing better performance and greater throughput.","PeriodicalId":6362,"journal":{"name":"2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"13 1","pages":"813-816"},"PeriodicalIF":0.0,"publicationDate":"2006-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81961161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-01-01DOI: 10.1109/NEMS.2006.334687
Liying Jiang, Xianbo Luo, Qing Tian, Hui Wang, Xinxia Cai
A disposable biosensor for the determination of hemoglobin in whole blood is described. The sensing method is based on amperometric detection technology. Platinized thin-film gold electrode is employed as a base electrode for the immobilization of mediator potassium ferricyanide. Saponin hemolyses the erythrocytes and hemoglobin is released. The biosensor has characters of rapid response time (60 s), high accuracy (> 90%), small sample volume (3 muL) and good precision (CV = 3.6%). The biosensor connected with the homemade portable meter can be used to determine hemoglobin concentration in clinical diagnosis and home-care purpose for athletes and patients potentially
{"title":"Disposable Biosensor for Hemoglobin Determination in Whole Blood","authors":"Liying Jiang, Xianbo Luo, Qing Tian, Hui Wang, Xinxia Cai","doi":"10.1109/NEMS.2006.334687","DOIUrl":"https://doi.org/10.1109/NEMS.2006.334687","url":null,"abstract":"A disposable biosensor for the determination of hemoglobin in whole blood is described. The sensing method is based on amperometric detection technology. Platinized thin-film gold electrode is employed as a base electrode for the immobilization of mediator potassium ferricyanide. Saponin hemolyses the erythrocytes and hemoglobin is released. The biosensor has characters of rapid response time (60 s), high accuracy (> 90%), small sample volume (3 muL) and good precision (CV = 3.6%). The biosensor connected with the homemade portable meter can be used to determine hemoglobin concentration in clinical diagnosis and home-care purpose for athletes and patients potentially","PeriodicalId":6362,"journal":{"name":"2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"147 1","pages":"204-208"},"PeriodicalIF":0.0,"publicationDate":"2006-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85366478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-01-01DOI: 10.1109/NEMS.2006.334868
N. Sepúlveda, D. Aslam, J. Sullivan, J. Wendt, B. McKenzie
This paper reports the fabrication technology and testing of polycrystalline diamond (poly-C) mechanical resonators with dimensions as small as 100 nm for the first time. The fabricated structures include cantilever structures patterned using electron beam lithography to have widths of 100 nm, and torsional paddle resonators with a support beam width of 0.5 mum, which sustained a proof mass around 6.16 times 10-13 Kg. The performance of these structures shows resonant frequencies and quality factor (Q) values in the range of 23 KHz-805 KHz and 9,580-103,600 respectively. The structures were tested using piezoelectric actuation and light interferometer detection techniques. Torsional resonators were fabricated from different poly-C films in order to study the influence of the poly-C film in the resonator Q.
{"title":"Polycrystalline Diamond Micromechanical Resonators with Nanometer Dimensions","authors":"N. Sepúlveda, D. Aslam, J. Sullivan, J. Wendt, B. McKenzie","doi":"10.1109/NEMS.2006.334868","DOIUrl":"https://doi.org/10.1109/NEMS.2006.334868","url":null,"abstract":"This paper reports the fabrication technology and testing of polycrystalline diamond (poly-C) mechanical resonators with dimensions as small as 100 nm for the first time. The fabricated structures include cantilever structures patterned using electron beam lithography to have widths of 100 nm, and torsional paddle resonators with a support beam width of 0.5 mum, which sustained a proof mass around 6.16 times 10-13 Kg. The performance of these structures shows resonant frequencies and quality factor (Q) values in the range of 23 KHz-805 KHz and 9,580-103,600 respectively. The structures were tested using piezoelectric actuation and light interferometer detection techniques. Torsional resonators were fabricated from different poly-C films in order to study the influence of the poly-C film in the resonator Q.","PeriodicalId":6362,"journal":{"name":"2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"62 1","pages":"662-667"},"PeriodicalIF":0.0,"publicationDate":"2006-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90263557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-01-01DOI: 10.1109/NEMS.2006.334903
Dingqu Wang, R. Zhu, Zhaoying Zhou, X. Ye
We report on electrophoretic alignment of ZnO nanobelt bunches and their electrical and optical properties. The nanobelts were trapped onto a pair of electrodes by using alternating electrical current at frequency between 5 ~ 50 MHz and peak-to-peak amplitude from 2 to 20 V. Their electrical transport properties associated with the photoelectricity were studied at room temperature in the air ambient by using a xenon arc lamp source. Three typical IV characteristics were observed: asymmetry, symmetry and infinite impedance. The photoconductivity measurements show that the photocurrent through ZnO nanobelts increases as about 1.6 power of light intensity. The electron concentration Delta n is estimated to be 3.3times107 cm-1 at a bias voltage of -3V. Photocurrent decay was also studied through the experiment of photoresponse to illumination, and the decay time was estimated to be about 3 s. Collectively, ZnO nanobelts are demonstrated to be a remarkable optoelectronic material that holds wide applications for nanoscale photonic devices.
{"title":"Current-voltage and Optoelectronic Properties of Semiconducting ZnO Nanobelts","authors":"Dingqu Wang, R. Zhu, Zhaoying Zhou, X. Ye","doi":"10.1109/NEMS.2006.334903","DOIUrl":"https://doi.org/10.1109/NEMS.2006.334903","url":null,"abstract":"We report on electrophoretic alignment of ZnO nanobelt bunches and their electrical and optical properties. The nanobelts were trapped onto a pair of electrodes by using alternating electrical current at frequency between 5 ~ 50 MHz and peak-to-peak amplitude from 2 to 20 V. Their electrical transport properties associated with the photoelectricity were studied at room temperature in the air ambient by using a xenon arc lamp source. Three typical IV characteristics were observed: asymmetry, symmetry and infinite impedance. The photoconductivity measurements show that the photocurrent through ZnO nanobelts increases as about 1.6 power of light intensity. The electron concentration Delta n is estimated to be 3.3times107 cm-1 at a bias voltage of -3V. Photocurrent decay was also studied through the experiment of photoresponse to illumination, and the decay time was estimated to be about 3 s. Collectively, ZnO nanobelts are demonstrated to be a remarkable optoelectronic material that holds wide applications for nanoscale photonic devices.","PeriodicalId":6362,"journal":{"name":"2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"1 1","pages":"817-820"},"PeriodicalIF":0.0,"publicationDate":"2006-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90413686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-01-01DOI: 10.1109/NEMS.2006.334787
Ying Wang, Minglai Yang, Linpei Zhu, Yafei Zhang
Silicon nanostructures were fabricated by a natural lithography technique, with sizes far beyond the limit of conventional, by a self-organizing gold colloidal particle monolayer as an etch mask. The silicon nanostructures with high density and uniformity in height and shape were obtained using reactive ion etching (RIE). The uniform spatial distribution of the Si nanostructures can also be obtained. The resulting nanostructures were investigated by scanning electron microscopy. This method can be applied to patterning a wide variety of thin film materials in to dot arrays
{"title":"Silicon Nanostructures Formed by Self-organizing Au Nanoparticle Film","authors":"Ying Wang, Minglai Yang, Linpei Zhu, Yafei Zhang","doi":"10.1109/NEMS.2006.334787","DOIUrl":"https://doi.org/10.1109/NEMS.2006.334787","url":null,"abstract":"Silicon nanostructures were fabricated by a natural lithography technique, with sizes far beyond the limit of conventional, by a self-organizing gold colloidal particle monolayer as an etch mask. The silicon nanostructures with high density and uniformity in height and shape were obtained using reactive ion etching (RIE). The uniform spatial distribution of the Si nanostructures can also be obtained. The resulting nanostructures were investigated by scanning electron microscopy. This method can be applied to patterning a wide variety of thin film materials in to dot arrays","PeriodicalId":6362,"journal":{"name":"2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"29 3 1","pages":"410-413"},"PeriodicalIF":0.0,"publicationDate":"2006-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77995645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-01-01DOI: 10.1109/NEMS.2006.334658
D. Liu, Jun Xu, Shiliu Xu, Y. Hao, P. Qian, Zhihong Liu, G. Hu, Zhengfan Zhang, Jing Zhang, Rongkan Liu, Luncai Liu, Rongqiang Li, Kaiquan He, Yukui Liu, Guangbing Chen, U. Koenig, H. Kibbel, A. Gruhle, U. Seiler, Kaicheng Li
In this paper, a self-aligned SiGe/Si HBT was fabricated based on dry/wet etching, in which Si and SiGe materials were etched by KOH (potassium hydroxide) solution and SF6 (sulfur hexafluoride). In the terms of mesa SiGe HBT production, it is a key technology to control the etch of ultra-thin Si and SiGe film. When N+/N silicon in emitter region is etched, the length of etch time is critical. If etch time is too long, SiGe layer is apt to be etched, so that no HBT is available; if etch time is too short, N+/N Si remains on base contact, so that emitter and base are shorted. Despite a small lateral etch, dry etching doesn't benefit the realization of self-alignment process, nor benefit improvement of yield and fmax. In this paper, based on the chemical properties of silicon and germanium, dry and wet etches were properly combined to etch silicon and silicon germanium. First, N+/N Si outside emitter was etched with intentional lateral etch using KOH solution. Then, SiGe was etched by SF6. As a result, SiGe HBT with self-alignment of emitter to base has been developed. The measured results are: cutoff frequency fT=103.3GHz, maximum oscillation frequency fmax=124.2GHz
{"title":"SiGe HBT Device in Mixed Dry Wet Etching","authors":"D. Liu, Jun Xu, Shiliu Xu, Y. Hao, P. Qian, Zhihong Liu, G. Hu, Zhengfan Zhang, Jing Zhang, Rongkan Liu, Luncai Liu, Rongqiang Li, Kaiquan He, Yukui Liu, Guangbing Chen, U. Koenig, H. Kibbel, A. Gruhle, U. Seiler, Kaicheng Li","doi":"10.1109/NEMS.2006.334658","DOIUrl":"https://doi.org/10.1109/NEMS.2006.334658","url":null,"abstract":"In this paper, a self-aligned SiGe/Si HBT was fabricated based on dry/wet etching, in which Si and SiGe materials were etched by KOH (potassium hydroxide) solution and SF6 (sulfur hexafluoride). In the terms of mesa SiGe HBT production, it is a key technology to control the etch of ultra-thin Si and SiGe film. When N+/N silicon in emitter region is etched, the length of etch time is critical. If etch time is too long, SiGe layer is apt to be etched, so that no HBT is available; if etch time is too short, N+/N Si remains on base contact, so that emitter and base are shorted. Despite a small lateral etch, dry etching doesn't benefit the realization of self-alignment process, nor benefit improvement of yield and fmax. In this paper, based on the chemical properties of silicon and germanium, dry and wet etches were properly combined to etch silicon and silicon germanium. First, N+/N Si outside emitter was etched with intentional lateral etch using KOH solution. Then, SiGe was etched by SF6. As a result, SiGe HBT with self-alignment of emitter to base has been developed. The measured results are: cutoff frequency fT=103.3GHz, maximum oscillation frequency fmax=124.2GHz","PeriodicalId":6362,"journal":{"name":"2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"12 1","pages":"149-152"},"PeriodicalIF":0.0,"publicationDate":"2006-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78345545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-01-01DOI: 10.1109/NEMS.2006.334573
Huijun Zhang, Hongmei Liu, Changsheng Mu, C. Qiu, Dajun Wu
In order to study antibacterial properties of nanometer TiO2 thin films, nanometer Fe3+-TiO2 films have been prepared on glass by RF magnetron co-sputtering method. The films were characterized by SEM, XRD, and XPS. The influence of Fe element and calcination temperature on the films structure was investigated. The principle of substitution impurity to improve the activity was discussed. The bactericidal activity for the bacteria cells was estimated by relative number of bacteria survived calculated from the number of viable cells which from colonies on the nutrient agar plates. The crystallite size of the anatase phase increases with increasing calcination temperature. XPS results show that doped-Fe is present in the oxide state. The nanometer Fe3+-TiO2 thin films exhibited a high antibacterial activity, which was enhanced with the increase of the temperature of thermal treatment and formation of anatase crystalline structure.
{"title":"Antibacterial Properties of Nanometer Fe3+-TiO2 Thin Films","authors":"Huijun Zhang, Hongmei Liu, Changsheng Mu, C. Qiu, Dajun Wu","doi":"10.1109/NEMS.2006.334573","DOIUrl":"https://doi.org/10.1109/NEMS.2006.334573","url":null,"abstract":"In order to study antibacterial properties of nanometer TiO2 thin films, nanometer Fe3+-TiO2 films have been prepared on glass by RF magnetron co-sputtering method. The films were characterized by SEM, XRD, and XPS. The influence of Fe element and calcination temperature on the films structure was investigated. The principle of substitution impurity to improve the activity was discussed. The bactericidal activity for the bacteria cells was estimated by relative number of bacteria survived calculated from the number of viable cells which from colonies on the nutrient agar plates. The crystallite size of the anatase phase increases with increasing calcination temperature. XPS results show that doped-Fe is present in the oxide state. The nanometer Fe3+-TiO2 thin films exhibited a high antibacterial activity, which was enhanced with the increase of the temperature of thermal treatment and formation of anatase crystalline structure.","PeriodicalId":6362,"journal":{"name":"2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"13 4-5 1","pages":"955-958"},"PeriodicalIF":0.0,"publicationDate":"2006-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78485303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-01-01DOI: 10.1109/NEMS.2006.334699
Xianxiang Chen, C. Peng, Chao Ye, Hu Tao, Q. Bai, Shaofeng Chen, S. Xia
A thermally driven miniature electric field sensor (MEFS) has been designed, fabricated and tested. It is mainly comprised of shielding electrodes, bent beam thermal driver, positive and negative sense electrodes and drive pads etc, the shielding electrodes are driven by a cascaded bent beam thermal driver to periodically cover or expose the positive and negative sense electrodes. The thermally driven MEFS has the advantage of small size, light weight, low driving voltage, easy to integrate with circuits, low drive-signal cross talk noise etc. When activated with a square wave of plusmn2 V amplitude at a frequency of 20 kHz, the electric field strength resolution of the thermally driven MEFS can reach 105.8 V/m when the electric field strength is over 20000 V/m, but its output sensitivity will decrease when the electric field strength goes down from 20000 V/m. We will improve the low electric field sensitivity in our future work
{"title":"Thernally Driven Miniature Electric Field Sensor","authors":"Xianxiang Chen, C. Peng, Chao Ye, Hu Tao, Q. Bai, Shaofeng Chen, S. Xia","doi":"10.1109/NEMS.2006.334699","DOIUrl":"https://doi.org/10.1109/NEMS.2006.334699","url":null,"abstract":"A thermally driven miniature electric field sensor (MEFS) has been designed, fabricated and tested. It is mainly comprised of shielding electrodes, bent beam thermal driver, positive and negative sense electrodes and drive pads etc, the shielding electrodes are driven by a cascaded bent beam thermal driver to periodically cover or expose the positive and negative sense electrodes. The thermally driven MEFS has the advantage of small size, light weight, low driving voltage, easy to integrate with circuits, low drive-signal cross talk noise etc. When activated with a square wave of plusmn2 V amplitude at a frequency of 20 kHz, the electric field strength resolution of the thermally driven MEFS can reach 105.8 V/m when the electric field strength is over 20000 V/m, but its output sensitivity will decrease when the electric field strength goes down from 20000 V/m. We will improve the low electric field sensitivity in our future work","PeriodicalId":6362,"journal":{"name":"2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"48 1","pages":"258-261"},"PeriodicalIF":0.0,"publicationDate":"2006-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85191515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-01-01DOI: 10.1109/NEMS.2006.334652
M.Z. Zhu, Z. Jiang, B. Yang, W. Jing, H. Zhang
The paper describes an approach for preparing probes for combined SPM techniques, such as scanning electrochemical microscopy (SECM)/photoelectrochemical microscopy (PEM), SECM/near-field scanning optical microscopy (NSOM). The SECM/PEM probes were constructed firstly by stripping off a single mode optical fiber's polymer coating (125 mum diameter of cladding) at one end. The stripped optical fibers were then concentrically coated with Au thin film by radio frequency (RF) magnetron sputtering. The Au thin film coated optical fibers were insulating using silicon nitride thin films of low temperature plasma enhanced chemical vapor deposition (PECVD). Polishing was used to simultaneously open up the surfaces of Au ring ultramicroelectrodes (UMEs) of SECM and the apertures of PEM. Once fabricated, the probes were characterized with excellent adhesion qualities at the interfaces of Au thin film/optical fiber and silicon nitride thin film/Au thin film by scanning electron microscopy (SEM) measurement. The silicon nitride thin films were found to be free of microcracks by SEM. Electrochemical properties of the probes were investigated by cyclic voltammetry (CV) through three-electrode system. The electrochemical responses of the probes are sigmoidal in shape at different scan rates and indicate that the fabricated Au ring electrodes exhibit UMEs' electrochemical response
{"title":"Fabrication and Characterization of Probes for Combined SPM Techniques Based on PECVD","authors":"M.Z. Zhu, Z. Jiang, B. Yang, W. Jing, H. Zhang","doi":"10.1109/NEMS.2006.334652","DOIUrl":"https://doi.org/10.1109/NEMS.2006.334652","url":null,"abstract":"The paper describes an approach for preparing probes for combined SPM techniques, such as scanning electrochemical microscopy (SECM)/photoelectrochemical microscopy (PEM), SECM/near-field scanning optical microscopy (NSOM). The SECM/PEM probes were constructed firstly by stripping off a single mode optical fiber's polymer coating (125 mum diameter of cladding) at one end. The stripped optical fibers were then concentrically coated with Au thin film by radio frequency (RF) magnetron sputtering. The Au thin film coated optical fibers were insulating using silicon nitride thin films of low temperature plasma enhanced chemical vapor deposition (PECVD). Polishing was used to simultaneously open up the surfaces of Au ring ultramicroelectrodes (UMEs) of SECM and the apertures of PEM. Once fabricated, the probes were characterized with excellent adhesion qualities at the interfaces of Au thin film/optical fiber and silicon nitride thin film/Au thin film by scanning electron microscopy (SEM) measurement. The silicon nitride thin films were found to be free of microcracks by SEM. Electrochemical properties of the probes were investigated by cyclic voltammetry (CV) through three-electrode system. The electrochemical responses of the probes are sigmoidal in shape at different scan rates and indicate that the fabricated Au ring electrodes exhibit UMEs' electrochemical response","PeriodicalId":6362,"journal":{"name":"2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"71 1","pages":"121-125"},"PeriodicalIF":0.0,"publicationDate":"2006-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85219066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-01-01DOI: 10.1109/NEMS.2006.334572
Linru Guo, X. Ye, H. Li, Yi-Tao Liu, Zhaoying Zhou
In order to improve the performance of field emitters nowadays, carbon nanotubes are used instead of conventional materials such as silicon and metals. In this paper, field emission characteristics of three different multi-wall carbon nanotube films have been compared, which are fabricated by different methods, including direct growth, evaporation coating and flow assembly. The field emission current-voltage property of each film has been characterized experimentally, and the electric field enhancement factor has been analyzed using Fowler-Nordheim theory. Moreover, emission stability of each film has been measured too. It can be concluded that the direct-grown vertical multi-wall carbon nanotube array has turn-on field of 0.603 V/mum and current density fluctuation less than 5%, which is much lower than the other films by post-treatment processes.
{"title":"Field Emission Characteristics of Carbon Nanotube Films Fabricated by Different Methods","authors":"Linru Guo, X. Ye, H. Li, Yi-Tao Liu, Zhaoying Zhou","doi":"10.1109/NEMS.2006.334572","DOIUrl":"https://doi.org/10.1109/NEMS.2006.334572","url":null,"abstract":"In order to improve the performance of field emitters nowadays, carbon nanotubes are used instead of conventional materials such as silicon and metals. In this paper, field emission characteristics of three different multi-wall carbon nanotube films have been compared, which are fabricated by different methods, including direct growth, evaporation coating and flow assembly. The field emission current-voltage property of each film has been characterized experimentally, and the electric field enhancement factor has been analyzed using Fowler-Nordheim theory. Moreover, emission stability of each film has been measured too. It can be concluded that the direct-grown vertical multi-wall carbon nanotube array has turn-on field of 0.603 V/mum and current density fluctuation less than 5%, which is much lower than the other films by post-treatment processes.","PeriodicalId":6362,"journal":{"name":"2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"398 1","pages":"951-954"},"PeriodicalIF":0.0,"publicationDate":"2006-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79503312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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