Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703414
V. Obreja
Semiconductor components from electrical circuits and systems have a maximum permissible working voltage, specified for reliable operation. Short duration over-voltage of amplitude higher than this specified voltage can lead to system failure. Typical electrical characteristics for special components like varistors or silicon transient voltage suppressors, used in the circuit over-voltage protection are shown and analyzed. The advantages and disadvantages are outlined. The varistor type surge voltage suppressors are lower cost devices but with poor protection efficiency. Their operation temperature is limited to 85degC. The silicon avalanche breakdown based devices and thyristor based devices manifest good protection efficiency but at higher cost. Their operation temperature is higher than 100degC. At this time, commercial surge suppressors for efficient over-voltage protection below 5-6 V are not available.
{"title":"Transient surge voltage suppressors and their performance in circuit over-voltage protection","authors":"V. Obreja","doi":"10.1109/SMICND.2008.4703414","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703414","url":null,"abstract":"Semiconductor components from electrical circuits and systems have a maximum permissible working voltage, specified for reliable operation. Short duration over-voltage of amplitude higher than this specified voltage can lead to system failure. Typical electrical characteristics for special components like varistors or silicon transient voltage suppressors, used in the circuit over-voltage protection are shown and analyzed. The advantages and disadvantages are outlined. The varistor type surge voltage suppressors are lower cost devices but with poor protection efficiency. Their operation temperature is limited to 85degC. The silicon avalanche breakdown based devices and thyristor based devices manifest good protection efficiency but at higher cost. Their operation temperature is higher than 100degC. At this time, commercial surge suppressors for efficient over-voltage protection below 5-6 V are not available.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76657489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703390
S. Simeonov, A. Szekeres, I. Minkov, K. Ivanova, M. Gartner, C. Parlog
The admittance- voltage characteristics of MIS structures with TiO2(La) dielectric films, have been measured in the 100 Hz-100 kHz test voltage frequency range. It has been established that the dielectric constant of these dielectric films increases with the decrease of the test voltage frequency. The conductance of these MIS structures increases with the test voltage frequency in the same 100 Hz-100 kHz frequency range. These admittance measurements are used to estimate the density of deep levels, responsible for observed dependence of the dielectric constant on the test voltage frequency in investigated MIS structures.
{"title":"The influence of deep levels on the admittance of MIS structures with sol-gel TiO2 insulator film","authors":"S. Simeonov, A. Szekeres, I. Minkov, K. Ivanova, M. Gartner, C. Parlog","doi":"10.1109/SMICND.2008.4703390","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703390","url":null,"abstract":"The admittance- voltage characteristics of MIS structures with TiO2(La) dielectric films, have been measured in the 100 Hz-100 kHz test voltage frequency range. It has been established that the dielectric constant of these dielectric films increases with the decrease of the test voltage frequency. The conductance of these MIS structures increases with the test voltage frequency in the same 100 Hz-100 kHz frequency range. These admittance measurements are used to estimate the density of deep levels, responsible for observed dependence of the dielectric constant on the test voltage frequency in investigated MIS structures.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88199874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703406
L. Pintilie, I. Pintilie, I. Vrejoiu, M. Alexe
The electric, ferroelectric and photoelectric properties of Pb(Zr,Ti)O3-Nb:SrTiO3 (PZT-STON) junctions were investigated on a broad range of temperatures. It was found that the hysteresis loop is strongly asymmetric, due to the asymmetry in the leakage current. The capacitance-voltage characteristic has a butterfly shape although it is also asymmetric because of the different nucleation and compensation conditions at the two interfaces. The junction shows a strong photovoltaic effect in the 200- 500 nm wavelength range as short-circuit currents of the order of nA for an illuminated surface of 0.018 mm2. This makes the PZT-STON junctions attractive for UV optoelectronic applications.
{"title":"Electric, ferroelectric and photoelectric properties of Pb(Zr,Ti)O3-Nb:SrTiO3 junctions","authors":"L. Pintilie, I. Pintilie, I. Vrejoiu, M. Alexe","doi":"10.1109/SMICND.2008.4703406","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703406","url":null,"abstract":"The electric, ferroelectric and photoelectric properties of Pb(Zr,Ti)O3-Nb:SrTiO3 (PZT-STON) junctions were investigated on a broad range of temperatures. It was found that the hysteresis loop is strongly asymmetric, due to the asymmetry in the leakage current. The capacitance-voltage characteristic has a butterfly shape although it is also asymmetric because of the different nucleation and compensation conditions at the two interfaces. The junction shows a strong photovoltaic effect in the 200- 500 nm wavelength range as short-circuit currents of the order of nA for an illuminated surface of 0.018 mm2. This makes the PZT-STON junctions attractive for UV optoelectronic applications.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84079710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703393
R. Plugaru, M. Artigas, N. Plugaru
We present results of ab initio supercell calculations performed in the DFT-L(S)DA framework on rutile TiO2 phase with neutral oxygen vacancies (OVs), in the low defect concentration range (les 6.25 at.%). The different OVs distributions in the supercell allow us to determine the localization and structure of the vacancy-induced states, the effect of vacancy concentration on the occupation numbers, as well as vacancy energetics. The present study benefits of the high accuracy in the total energy and band structure calculations of the full potential method utilized.
{"title":"Ab initio study of neutral oxygen vacancies in rutile TiO2","authors":"R. Plugaru, M. Artigas, N. Plugaru","doi":"10.1109/SMICND.2008.4703393","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703393","url":null,"abstract":"We present results of ab initio supercell calculations performed in the DFT-L(S)DA framework on rutile TiO2 phase with neutral oxygen vacancies (OVs), in the low defect concentration range (les 6.25 at.%). The different OVs distributions in the supercell allow us to determine the localization and structure of the vacancy-induced states, the effect of vacancy concentration on the occupation numbers, as well as vacancy energetics. The present study benefits of the high accuracy in the total energy and band structure calculations of the full potential method utilized.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88031282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703426
F. Babarada, R. Plugaru, A. Rusu
The continuum down-scaling lead the field-effect transistors in the nanometre region with devices and structures characterized by high doping drains/ sources and thin insulating layers. When the thickness of the layers attends 2 nm or less, the coupling between the semiconductor channel and the gate canpsilat be neglected. A correct quantum-mechanical model must correct evaluate the channel charge distribution and the leakage current flowing between the gate and the channel through tunnelling. The presented iterative approximation method for calculate the 1D device main electric parameters offer short time computation and was applied to study the thin silicon oxide and high-k dielectrics stacks combination for the silicon devices.
{"title":"Tunelling leakage current characterization of silicon oxide and high-k dielectics for advanced semiconductor devices","authors":"F. Babarada, R. Plugaru, A. Rusu","doi":"10.1109/SMICND.2008.4703426","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703426","url":null,"abstract":"The continuum down-scaling lead the field-effect transistors in the nanometre region with devices and structures characterized by high doping drains/ sources and thin insulating layers. When the thickness of the layers attends 2 nm or less, the coupling between the semiconductor channel and the gate canpsilat be neglected. A correct quantum-mechanical model must correct evaluate the channel charge distribution and the leakage current flowing between the gate and the channel through tunnelling. The presented iterative approximation method for calculate the 1D device main electric parameters offer short time computation and was applied to study the thin silicon oxide and high-k dielectrics stacks combination for the silicon devices.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83046957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703421
D. Ulieru, A. Matei, E. Ulieru, A. Tanțău, F. Babarada
The process model involving the calculation of the laser melted region in which the dopant diffusion occurs has been developed. Experimental results are well described by the proposed model. In this paper after reviewing the principle of our technique, we present the electronic characterization and the modeling these new microdevices and show that they present excellent current voltage linear behavior at usual microelectronics voltages. Furthermore, process modeling bases on the laser induced silicon melted region calculation is introduced and successfully compared to experimental results. The laser trimming applications for microelectronics special components will confirm wide applications range of this new technology.
{"title":"New technologies for microelectronics devices processing by laser locally structural modifications","authors":"D. Ulieru, A. Matei, E. Ulieru, A. Tanțău, F. Babarada","doi":"10.1109/SMICND.2008.4703421","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703421","url":null,"abstract":"The process model involving the calculation of the laser melted region in which the dopant diffusion occurs has been developed. Experimental results are well described by the proposed model. In this paper after reviewing the principle of our technique, we present the electronic characterization and the modeling these new microdevices and show that they present excellent current voltage linear behavior at usual microelectronics voltages. Furthermore, process modeling bases on the laser induced silicon melted region calculation is introduced and successfully compared to experimental results. The laser trimming applications for microelectronics special components will confirm wide applications range of this new technology.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80039501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703395
A. Dafinei, A. Ioanid, A. Dafinei
In an non-homogenous dielectric, in the low frequency range, the polarization properties due to the free charge kinetic modifies as function of the accumulation and redistribution of this space charge on inhomogeneities. The relaxation of these polarization leads to the dispersion of the permittivity and conductivity. We propose a model for the low frequencies conductivity relaxation phenomena in porous Si porous (PS).
{"title":"Model for the low frequency electrical relaxation in Si porous","authors":"A. Dafinei, A. Ioanid, A. Dafinei","doi":"10.1109/SMICND.2008.4703395","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703395","url":null,"abstract":"In an non-homogenous dielectric, in the low frequency range, the polarization properties due to the free charge kinetic modifies as function of the accumulation and redistribution of this space charge on inhomogeneities. The relaxation of these polarization leads to the dispersion of the permittivity and conductivity. We propose a model for the low frequencies conductivity relaxation phenomena in porous Si porous (PS).","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83870058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703404
O. Lupan, L. Chow, G. Chai, A. Schulte, S. Park, H. Heinrich, V. Sontea, V. Trofim, S. Railean
A facile aqueous solution process to fabricate tin oxide nanoarchitectures was successfully developed. The influence of precursors on the morphology of SnO2 is studied. Tin oxide nanobelts/nanoribbons were characterized by X-ray diffraction, micro-Raman spectroscopy, transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Possible growth mechanism of tin oxide nanobedlts/nanoribbons is discussed. Their characteristics make it potential candidates for fabrication of new sensors and nanodevices.
{"title":"Investigation of tin oxide nanobelts/nanoribbons prepared by chemical deposition technology","authors":"O. Lupan, L. Chow, G. Chai, A. Schulte, S. Park, H. Heinrich, V. Sontea, V. Trofim, S. Railean","doi":"10.1109/SMICND.2008.4703404","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703404","url":null,"abstract":"A facile aqueous solution process to fabricate tin oxide nanoarchitectures was successfully developed. The influence of precursors on the morphology of SnO2 is studied. Tin oxide nanobelts/nanoribbons were characterized by X-ray diffraction, micro-Raman spectroscopy, transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Possible growth mechanism of tin oxide nanobedlts/nanoribbons is discussed. Their characteristics make it potential candidates for fabrication of new sensors and nanodevices.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85610994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703338
D. Neculoiu, A. Muller, F. Giacomozzi, D. Vasilache, I. Petrini, C. Buiculescu, A. Muller
This paper presents the design, fabrication and experimental results of the switchable band-pass lumped elements filters. The design is based on a new optimization approach that integrates mixed circuital and electromagnetic simulations. The use of horizontal internal ports and the connection of external capacitors at circuital level make the optimization procedure very efficient. A very good agreement between measurements and simulations validate the new design approach.
{"title":"Design and optimization of microwave lumped elements filters using mixed circuital-electromagnetic simulations","authors":"D. Neculoiu, A. Muller, F. Giacomozzi, D. Vasilache, I. Petrini, C. Buiculescu, A. Muller","doi":"10.1109/SMICND.2008.4703338","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703338","url":null,"abstract":"This paper presents the design, fabrication and experimental results of the switchable band-pass lumped elements filters. The design is based on a new optimization approach that integrates mixed circuital and electromagnetic simulations. The use of horizontal internal ports and the connection of external capacitors at circuital level make the optimization procedure very efficient. A very good agreement between measurements and simulations validate the new design approach.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85706589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703444
O. Miţă, C. Bostan, P. Schiopu
A non defect waveguide based on self-collimation effect in two-dimensional photonic crystals is presented in this paper. An investigation to determine self-collimation frequency range in square and hexagonal lattice photonic crystals is realized. It is demonstrated the routing of two self-collimated Gaussian beams travelling through a hexagonal photonic crystal, on the same optical layer. Using the unique advantage of allowing self-collimated beams to cross each other without coupling, one can devise structureless interconnects for photonic integrated circuits.
{"title":"On chip optical signal routing based on self-collimation effect in two-dimensional photonic crystals","authors":"O. Miţă, C. Bostan, P. Schiopu","doi":"10.1109/SMICND.2008.4703444","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703444","url":null,"abstract":"A non defect waveguide based on self-collimation effect in two-dimensional photonic crystals is presented in this paper. An investigation to determine self-collimation frequency range in square and hexagonal lattice photonic crystals is realized. It is demonstrated the routing of two self-collimated Gaussian beams travelling through a hexagonal photonic crystal, on the same optical layer. Using the unique advantage of allowing self-collimated beams to cross each other without coupling, one can devise structureless interconnects for photonic integrated circuits.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80716162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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