Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703419
Miron J. Cristea, Florin Babarada
Considering the Gaussian model for the diffused junctions and beginning with the electric charge density equation applied for the semiconductor junctions, new relations for the depletion region width and barrier capacitance were obtained. Based on these relations, a new C-V method to extract the parameters of semiconductor devices, respectively of semiconductor junctions is presented. A very good agreement was obtained between the theoretical model and experimental data. This technique can be applied to many semiconductor devices with diffused junctions, like p-n diodes, bipolar transistors, thyristors, IGBTs.
{"title":"C-V parameter extraction technique for characterisation the diffused junctions of semiconductor devices","authors":"Miron J. Cristea, Florin Babarada","doi":"10.1109/SMICND.2008.4703419","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703419","url":null,"abstract":"Considering the Gaussian model for the diffused junctions and beginning with the electric charge density equation applied for the semiconductor junctions, new relations for the depletion region width and barrier capacitance were obtained. Based on these relations, a new C-V method to extract the parameters of semiconductor devices, respectively of semiconductor junctions is presented. A very good agreement was obtained between the theoretical model and experimental data. This technique can be applied to many semiconductor devices with diffused junctions, like p-n diodes, bipolar transistors, thyristors, IGBTs.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76107731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703318
S. Bellucci
We provide an introduction to devices based on carbon nanotubes, with application areas ranging from aerospace to flat panels, and from medical diagnostics to high-speed electronics. Firstly, Finally we introduce the notion of composites based on epoxy resins and carbon nanofiller, for aerospace applications, as well as for the protection of high-fidelity electronic devices in general, against electromagnetic disturbances (screening of electromagnetic interference effects). Then, we consider field emission displays involving cold cathodes realized using carbon nanotubes, with potential applications in various areas, e.g. flat panel screens, electron guns, new X-ray sources for medical diagnostics devices.
{"title":"Electronic transport properties in carbon nanotubes","authors":"S. Bellucci","doi":"10.1109/SMICND.2008.4703318","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703318","url":null,"abstract":"We provide an introduction to devices based on carbon nanotubes, with application areas ranging from aerospace to flat panels, and from medical diagnostics to high-speed electronics. Firstly, Finally we introduce the notion of composites based on epoxy resins and carbon nanofiller, for aerospace applications, as well as for the protection of high-fidelity electronic devices in general, against electromagnetic disturbances (screening of electromagnetic interference effects). Then, we consider field emission displays involving cold cathodes realized using carbon nanotubes, with potential applications in various areas, e.g. flat panel screens, electron guns, new X-ray sources for medical diagnostics devices.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74200500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703375
S. Simion, G. Sajin, R. Marcelli, G. Bartolucci
The paper presents an experimental method useful to characterize a four-port circuit, using a two-port VNA (vector network analyzer). As an example, the method is applied for a coupler. The results obtained by using this method and the expected results obtained by simulation are in good agreement.
{"title":"On-wafer experimental characterization for a 4-port circuit, using a two-port Vector Network Analyzer","authors":"S. Simion, G. Sajin, R. Marcelli, G. Bartolucci","doi":"10.1109/SMICND.2008.4703375","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703375","url":null,"abstract":"The paper presents an experimental method useful to characterize a four-port circuit, using a two-port VNA (vector network analyzer). As an example, the method is applied for a coupler. The results obtained by using this method and the expected results obtained by simulation are in good agreement.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86600622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703354
Doyoung Kim, Kyung-Sek Song, Chankyun Kim, S. Lee
PSPI has been applied to the end-fab process for better efficiency. However, it causes process time to increase, which can be a serious problem in the photo process. Excessive exposure time results in lower efficiency and lower productivity as well. It is also blamed for a damage of expensive equipment lens. Existing countermeasures have yet to clear those problems. As an alternative, DHP temperature control is expected to reduce exposure time by adjusting the hardness of PSPI. Consequently, exposure time per shot can be sharply reduced, enhancing productivity of photo process where many shots are repeatedly exposed to a wafer.
{"title":"Study on DHP temperature effect in PSPI exposure process","authors":"Doyoung Kim, Kyung-Sek Song, Chankyun Kim, S. Lee","doi":"10.1109/SMICND.2008.4703354","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703354","url":null,"abstract":"PSPI has been applied to the end-fab process for better efficiency. However, it causes process time to increase, which can be a serious problem in the photo process. Excessive exposure time results in lower efficiency and lower productivity as well. It is also blamed for a damage of expensive equipment lens. Existing countermeasures have yet to clear those problems. As an alternative, DHP temperature control is expected to reduce exposure time by adjusting the hardness of PSPI. Consequently, exposure time per shot can be sharply reduced, enhancing productivity of photo process where many shots are repeatedly exposed to a wafer.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87694807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703327
M. Dumitrescu, M. Wolf, K. Schulz, S. Wang, A. Larsson, S. Sujecki, E. Larkins, P. Melanen, P. Uusimaa, A. Laakso, M. Pessa
Dilute-nitride-based edge-emitting Fabry-Perot lasers with record performances have been used to build un-cooled optical transceiver modules. The paper presents and analyses some of the achieved performances starting from chip level to optical link transmission experiments. The studies, performed within the EU-FP6 project fast access, prove that the dilute-nitride GaInAsN lasers are a good solution for low-cost un-cooled transmitters targeting short and medium distance optical communications in a wide range of applications, from supercomputers and server farms to metropolitan and access area networks.
{"title":"Un-cooled 10 Gb/s dilute-nitride optical transmitters for the 1300 nm wavelength range","authors":"M. Dumitrescu, M. Wolf, K. Schulz, S. Wang, A. Larsson, S. Sujecki, E. Larkins, P. Melanen, P. Uusimaa, A. Laakso, M. Pessa","doi":"10.1109/SMICND.2008.4703327","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703327","url":null,"abstract":"Dilute-nitride-based edge-emitting Fabry-Perot lasers with record performances have been used to build un-cooled optical transceiver modules. The paper presents and analyses some of the achieved performances starting from chip level to optical link transmission experiments. The studies, performed within the EU-FP6 project fast access, prove that the dilute-nitride GaInAsN lasers are a good solution for low-cost un-cooled transmitters targeting short and medium distance optical communications in a wide range of applications, from supercomputers and server farms to metropolitan and access area networks.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86116361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703353
C. Moldovan, R. Iosub, C. Radu, N. Codreanu, M. Ion, C. Codreanu, B. Firtat, D. Necula, A. Ion, I. Ion, T. Harvey, P. Summersgill
The detection of organophosphoric insecticides, in a simple manner was made using impedimetric enzyme biosensors, which allow determination in sub-micromolar concentration ranges. This type of measurement applies for monitoring of biocatalytic reactions based on irreversible inhibition of the enzyme (acetylcholinesterase). The reaction involves generation of charged species, which leads to a global change in the ionic composition of the tested solution.Our work has been focused on the development of an impedimetric microsensor for direct detection of dichorvos, because this kind of biosensor presents a number of advantages such as: miniaturized electrodes based on gold thin film; easy production using standard microtechnology; low cost; no reference electrode required; no light sensitivity and differential mode measurements possibile allowing elimination of interferences. In addition, dichlorvos is targeted to be detected considering that the commonest poisoning today is due to: Methyl Parathion (metacid), Dichorvos (Nuvan), Zinc Phosphide and Aluminium Phosphide (Celphos). The biosensor with interdigitated electrodes and immobilized acetylcholinesteraze (AChE) measures the impedance of the layer adjacent to the electrode surface. The impedimetric measurement consists of determining the conductivity and capacitance of the solution between two interdigitated electrodes. The chemistry of deposited enzymatic layer (concentration, enzymatic activity measuring, deposition protocol), the immobilization technique for AChE, the fabrication technique and the electrical characteristiques of the enzymatic sensor have been studied. AChE immobilization was performed by ionic adsorption on polyethylenglycol (PEG) bio-polymeric substrate, by including in the gel. The functionalized electrodes deposited with biomaterial were inserted into the microfluidic channels and tested from electrical andmicrofluidic point of view, achieving the micro-bio integration. Insertion of electrolyte plus acetilcholine into the channels leads to activation of the enzyme and the measurements are realized under the strict control of temperature and pH. The response time is about 10 minutes.
{"title":"Enzymatic biosensor for insecticides detection","authors":"C. Moldovan, R. Iosub, C. Radu, N. Codreanu, M. Ion, C. Codreanu, B. Firtat, D. Necula, A. Ion, I. Ion, T. Harvey, P. Summersgill","doi":"10.1109/SMICND.2008.4703353","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703353","url":null,"abstract":"The detection of organophosphoric insecticides, in a simple manner was made using impedimetric enzyme biosensors, which allow determination in sub-micromolar concentration ranges. This type of measurement applies for monitoring of biocatalytic reactions based on irreversible inhibition of the enzyme (acetylcholinesterase). The reaction involves generation of charged species, which leads to a global change in the ionic composition of the tested solution.Our work has been focused on the development of an impedimetric microsensor for direct detection of dichorvos, because this kind of biosensor presents a number of advantages such as: miniaturized electrodes based on gold thin film; easy production using standard microtechnology; low cost; no reference electrode required; no light sensitivity and differential mode measurements possibile allowing elimination of interferences. In addition, dichlorvos is targeted to be detected considering that the commonest poisoning today is due to: Methyl Parathion (metacid), Dichorvos (Nuvan), Zinc Phosphide and Aluminium Phosphide (Celphos). The biosensor with interdigitated electrodes and immobilized acetylcholinesteraze (AChE) measures the impedance of the layer adjacent to the electrode surface. The impedimetric measurement consists of determining the conductivity and capacitance of the solution between two interdigitated electrodes. The chemistry of deposited enzymatic layer (concentration, enzymatic activity measuring, deposition protocol), the immobilization technique for AChE, the fabrication technique and the electrical characteristiques of the enzymatic sensor have been studied. AChE immobilization was performed by ionic adsorption on polyethylenglycol (PEG) bio-polymeric substrate, by including in the gel. The functionalized electrodes deposited with biomaterial were inserted into the microfluidic channels and tested from electrical andmicrofluidic point of view, achieving the micro-bio integration. Insertion of electrolyte plus acetilcholine into the channels leads to activation of the enzyme and the measurements are realized under the strict control of temperature and pH. The response time is about 10 minutes.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81390034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703410
A. Rusu, A. Ionescu, S. Eftimie
The paper presents a new method to evaluate the ratio between the two components of drain current in MOS transistors: drift and diffusion. By setting certain limits for this ratio, the moderate inversion region can be delimited in transfer electrical characteristics. The limits of the moderate inversion give the possibility for a more accurate applying of the continuous models. Some examples are given by extracting the main model parameters for a sub-micron MOS transistor and the limits of moderate inversion are compared with the results obtained using other models.
{"title":"The drift/diffusion ratio of the MOS transistor drain current","authors":"A. Rusu, A. Ionescu, S. Eftimie","doi":"10.1109/SMICND.2008.4703410","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703410","url":null,"abstract":"The paper presents a new method to evaluate the ratio between the two components of drain current in MOS transistors: drift and diffusion. By setting certain limits for this ratio, the moderate inversion region can be delimited in transfer electrical characteristics. The limits of the moderate inversion give the possibility for a more accurate applying of the continuous models. Some examples are given by extracting the main model parameters for a sub-micron MOS transistor and the limits of moderate inversion are compared with the results obtained using other models.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79681046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703443
A.-M. Calfa
This paper emphasizes the Infineon Technologies smart card last generation controller features. The system designed in this paper uses a smart card controller for synthesizing polyphonic sounds and showing a scrolling message on a dot matrix display. An ATmega8 controller is used as interface between the smart card and the peripherals.
{"title":"Polyphonic Smart Card","authors":"A.-M. Calfa","doi":"10.1109/SMICND.2008.4703443","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703443","url":null,"abstract":"This paper emphasizes the Infineon Technologies smart card last generation controller features. The system designed in this paper uses a smart card controller for synthesizing polyphonic sounds and showing a scrolling message on a dot matrix display. An ATmega8 controller is used as interface between the smart card and the peripherals.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83794796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703436
C. Andriesei, L. Goras, B. Delacressoniere
The paper presents an improved tuning method implemented for a differential active inductor based RF bandpass filter. Derived from a previous designed transistor-only second order filter topology, independent frequency and quality factor tuning are demonstrated in 0.18 mum CMOS technology. The circuit has been basically designed for 2.4 GHz, a frequency high enough to cover the main wireless standards, has small power consumption and can exhibit very high Q values. A wide frequency tuning range is obtained by using on.chip varactors. The circuit absorbs 1 mW from a 1.8 V supply at 2.4 GHz central frequency.
提出了一种改进的基于差动有源电感的射频带通滤波器的调谐方法。基于先前设计的纯晶体管二阶滤波器拓扑，在0.18 μ m CMOS技术中证明了独立的频率和质量因子调谐。该电路基本上是为2.4 GHz设计的，这个频率高到足以覆盖主要的无线标准，功耗小，Q值也很高。使用on可获得较宽的频率调谐范围。芯片变容器。该电路从2.4 GHz中心频率的1.8 V电源中吸收1mw。
{"title":"Active RF bandpass filter with wide frequency tuning range","authors":"C. Andriesei, L. Goras, B. Delacressoniere","doi":"10.1109/SMICND.2008.4703436","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703436","url":null,"abstract":"The paper presents an improved tuning method implemented for a differential active inductor based RF bandpass filter. Derived from a previous designed transistor-only second order filter topology, independent frequency and quality factor tuning are demonstrated in 0.18 mum CMOS technology. The circuit has been basically designed for 2.4 GHz, a frequency high enough to cover the main wireless standards, has small power consumption and can exhibit very high Q values. A wide frequency tuning range is obtained by using on.chip varactors. The circuit absorbs 1 mW from a 1.8 V supply at 2.4 GHz central frequency.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82451207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703440
A. Kara-Omar, C. Vialon, D. Dragomirescu, A. Coustou, R. Plana
This paper presents a transimpedance amplifier designed in ST Microelectronics BiCMOS9MW 130 nm technology. This circuit works as IF (intermediate frequency) buffer for mixer circuits. It presents a 37 dBOmega transimpedance gain, low input impedance, and 100Omega differential output impedance.
{"title":"Wide band transimpedance amplifier at 3 GHz IN 130 nm technology","authors":"A. Kara-Omar, C. Vialon, D. Dragomirescu, A. Coustou, R. Plana","doi":"10.1109/SMICND.2008.4703440","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703440","url":null,"abstract":"This paper presents a transimpedance amplifier designed in ST Microelectronics BiCMOS9MW 130 nm technology. This circuit works as IF (intermediate frequency) buffer for mixer circuits. It presents a 37 dBOmega transimpedance gain, low input impedance, and 100Omega differential output impedance.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75331050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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