Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703415
N. Tang
The spin-polarized tunneling current through a double barrier resonant tunneling diode (RTD) with ferromagnetic GaMnN emitter/collector is investigated theoretically. Two distinct spin splitting peaks can be observed at current-voltage (I-V) characteristics at low temperature. The spin polarization decreases with the temperature due to the thermal effect of electron density of states. When charge polarization effect is considered at the heterostructure, the spin polarization is enhanced significantly. A highly spin polarized current can be obtained depending on the polarization charge density.
{"title":"Spin-dependent current in resonant tunneling diode with ferromagnetic GaMnN layers","authors":"N. Tang","doi":"10.1109/SMICND.2008.4703415","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703415","url":null,"abstract":"The spin-polarized tunneling current through a double barrier resonant tunneling diode (RTD) with ferromagnetic GaMnN emitter/collector is investigated theoretically. Two distinct spin splitting peaks can be observed at current-voltage (I-V) characteristics at low temperature. The spin polarization decreases with the temperature due to the thermal effect of electron density of states. When charge polarization effect is considered at the heterostructure, the spin polarization is enhanced significantly. A highly spin polarized current can be obtained depending on the polarization charge density.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77321564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703339
M. Dragoman, G. Konstantinidis, D. Dragoman, D. Neculoiu, A. Cismaru, F. Coccetti, R. Plana, H. Harnagel, A. Kostopoulos, R. Buiculescu
This paper presents RF-NEMS devices (resonators, oscillators and switches) for microwave applications based on carbon nanotube and graphene. We have demonstrated that innovative and cost-effective devices with good performances can be produced combining the NEMS principles and microwave techniques.
{"title":"RF NEMS based on carbon nanotubes and graphene","authors":"M. Dragoman, G. Konstantinidis, D. Dragoman, D. Neculoiu, A. Cismaru, F. Coccetti, R. Plana, H. Harnagel, A. Kostopoulos, R. Buiculescu","doi":"10.1109/SMICND.2008.4703339","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703339","url":null,"abstract":"This paper presents RF-NEMS devices (resonators, oscillators and switches) for microwave applications based on carbon nanotube and graphene. We have demonstrated that innovative and cost-effective devices with good performances can be produced combining the NEMS principles and microwave techniques.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73751000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703402
D. Perniu, M. Duţă, D. Catrinoi, C. Toader, M. Gosman, E. Ienei, A. Duţă
Thin films of undoped and Al- and Ag-doped ZnO thin films have been obtained by spray pyrolysis deposition. The optimised parameters of deposition for the thin films to be used in optoelectronic applications are presented in the paper. The addition of low amounts of Al and Ag ions influences the film crystallinity and morphology. Based on the experimental results it is concluded that aluminium and silver act as dopants and reduce the band gap value of the host oxide, ZnO.
{"title":"ZnO thin films deposited by spray pyrolysis technique","authors":"D. Perniu, M. Duţă, D. Catrinoi, C. Toader, M. Gosman, E. Ienei, A. Duţă","doi":"10.1109/SMICND.2008.4703402","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703402","url":null,"abstract":"Thin films of undoped and Al- and Ag-doped ZnO thin films have been obtained by spray pyrolysis deposition. The optimised parameters of deposition for the thin films to be used in optoelectronic applications are presented in the paper. The addition of low amounts of Al and Ag ions influences the film crystallinity and morphology. Based on the experimental results it is concluded that aluminium and silver act as dopants and reduce the band gap value of the host oxide, ZnO.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75657233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703448
A. Rusu, N. Golescu, C. Ravariu
One of the challenges in the biomedical engineering domain is the Telemedicine. The remote diagnosis, automate instruments for drug delivery or mobile platforms for domestic applications are common targets accepted by the medical insurance companies form the world wide. The Telemedicine need the development of various tools for home analysis, in order to send all the collected analysis to a medical center or to a database on Internet. In this paper is proposed a simple and cheap platform for the Electro-cardio-gram recording on the Personal Computer. The platform consists in a hardware part and a software part. The general electrical circuit for the ECG recording was adapted in order to be available at home applications. The amplified signal is then connected via the microphone muff to PC. A dedicated software converts the input ldquonoiserdquo signal into an ECG trace. In this way, the ECG becomes available, in the simpler mode directly on the computer screen, without any expensive tracer.
{"title":"Manufacturing and tests of a mobile ecg platform","authors":"A. Rusu, N. Golescu, C. Ravariu","doi":"10.1109/SMICND.2008.4703448","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703448","url":null,"abstract":"One of the challenges in the biomedical engineering domain is the Telemedicine. The remote diagnosis, automate instruments for drug delivery or mobile platforms for domestic applications are common targets accepted by the medical insurance companies form the world wide. The Telemedicine need the development of various tools for home analysis, in order to send all the collected analysis to a medical center or to a database on Internet. In this paper is proposed a simple and cheap platform for the Electro-cardio-gram recording on the Personal Computer. The platform consists in a hardware part and a software part. The general electrical circuit for the ECG recording was adapted in order to be available at home applications. The amplified signal is then connected via the microphone muff to PC. A dedicated software converts the input ldquonoiserdquo signal into an ECG trace. In this way, the ECG becomes available, in the simpler mode directly on the computer screen, without any expensive tracer.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75082080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703365
A. Bragaru, M. Miu, F. Craciunoiu, I. Kleps, M. Simion, T. Ignat
Recently, for sensors application, porous silicon has received a great attention due to the high specific surface area and the easy fabrication using standard processes from silicon technology. The design and technology for a resistive humidity sensor full integrated on silicon is presented in this paper. This sensor integrates both the interdigitated microelectrodes array for detection, and the resistance for accelerated desorbtion process controlled by a temperature sensor.
{"title":"Technological fabrication of the humidity sensors on nanostructurated membranes","authors":"A. Bragaru, M. Miu, F. Craciunoiu, I. Kleps, M. Simion, T. Ignat","doi":"10.1109/SMICND.2008.4703365","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703365","url":null,"abstract":"Recently, for sensors application, porous silicon has received a great attention due to the high specific surface area and the easy fabrication using standard processes from silicon technology. The design and technology for a resistive humidity sensor full integrated on silicon is presented in this paper. This sensor integrates both the interdigitated microelectrodes array for detection, and the resistance for accelerated desorbtion process controlled by a temperature sensor.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74978524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703346
R. Rusu, M. Damaceanu, M. Brumǎ, R. Tigoianu, A. Muller
Aromatic polyimides have been prepared by solution polycondensation reaction of different aromatic diamines having preformed 1,3,4-oxadiazole ring with naphthalene-1,4,5,8-tetracarboxylic acid dianhydride (DNTA) or with a mixture of this dianhydride with hexafluoroisopropylidene-dianhydride (6FDA). The copolyimides containing naphthalene and flexible hexafluoroisopropylidene groups were soluble in polar amidic solvents and their solutions gave flexible thin films when spread onto glass plates and very thin films with smooth surface by spin coating. The thermal stability and glass transition temperature of these polyimides and copolyimides were measured and compared with regard to the influence of naphthalene units on these physical properties. The UV-vis and photoluminescence properties were also investigated.
{"title":"Aromatic polyimides for optoelectronic applications","authors":"R. Rusu, M. Damaceanu, M. Brumǎ, R. Tigoianu, A. Muller","doi":"10.1109/SMICND.2008.4703346","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703346","url":null,"abstract":"Aromatic polyimides have been prepared by solution polycondensation reaction of different aromatic diamines having preformed 1,3,4-oxadiazole ring with naphthalene-1,4,5,8-tetracarboxylic acid dianhydride (DNTA) or with a mixture of this dianhydride with hexafluoroisopropylidene-dianhydride (6FDA). The copolyimides containing naphthalene and flexible hexafluoroisopropylidene groups were soluble in polar amidic solvents and their solutions gave flexible thin films when spread onto glass plates and very thin films with smooth surface by spin coating. The thermal stability and glass transition temperature of these polyimides and copolyimides were measured and compared with regard to the influence of naphthalene units on these physical properties. The UV-vis and photoluminescence properties were also investigated.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73138875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703439
A. Lecointre, D. Dragomirescu, R. Plana
The impact of the type of implementation is considered on the IR-UWB channel capacity. This study is lead for analog and mostly digital implementation. Key parameters and theirs impacts on the channel capacity are exposed in each case: data converters for mostly digital implementations and pulse generators capabilities for analog implementations. These two implementations are compared from a data rate point of view. Their behaviors regarding an increase of the operating frequency are also studied.
{"title":"IR-UWB channel capacity for analog and mostly digital implementation","authors":"A. Lecointre, D. Dragomirescu, R. Plana","doi":"10.1109/SMICND.2008.4703439","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703439","url":null,"abstract":"The impact of the type of implementation is considered on the IR-UWB channel capacity. This study is lead for analog and mostly digital implementation. Key parameters and theirs impacts on the channel capacity are exposed in each case: data converters for mostly digital implementations and pulse generators capabilities for analog implementations. These two implementations are compared from a data rate point of view. Their behaviors regarding an increase of the operating frequency are also studied.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80157420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703433
Ana-Maria Luca, I.-A. Tranca, A. Danchiv
This paper presents a precision over current protective function integrated in a high side power switch. The accuracy improvement is based on using a low offset, autozero amplifier for providing the same bias conditions for both the power and the sense transistors.
{"title":"High precision over current detection for a high side switch","authors":"Ana-Maria Luca, I.-A. Tranca, A. Danchiv","doi":"10.1109/SMICND.2008.4703433","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703433","url":null,"abstract":"This paper presents a precision over current protective function integrated in a high side power switch. The accuracy improvement is based on using a low offset, autozero amplifier for providing the same bias conditions for both the power and the sense transistors.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83375245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703369
R. Voicu, R. Muller, L. Eftime
A new design for a polymeric microgripper was developed. Two microgripper with different dimensions were considered. An evaluation between these models was performed using the simulation results. Finite-element analyses of the microgripper, using COVENTORWARE, are performed in order to evaluate the relation between the displacement, temperatures and the electrical current passing through the metallic layers.
{"title":"A new design based on electro-thermally actuation for an SU-8 microgripper","authors":"R. Voicu, R. Muller, L. Eftime","doi":"10.1109/SMICND.2008.4703369","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703369","url":null,"abstract":"A new design for a polymeric microgripper was developed. Two microgripper with different dimensions were considered. An evaluation between these models was performed using the simulation results. Finite-element analyses of the microgripper, using COVENTORWARE, are performed in order to evaluate the relation between the displacement, temperatures and the electrical current passing through the metallic layers.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78430892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703392
Ș. Voicu, N. D. Stanciu, A. Nechifor, D. Vãireanu, G. Nechifor
In order to combine the advantages of polysulfone (PSf) as a membrane material to that of polyaniline as a conductive polymer, one has attempted to obtain novel polysulfone-polyaniline composite membranes by a newly improved technique comparing to the existing ones. The strong point of this technique consists in a phase inversion by immersion precipitation accompanying by chemical reaction followed by the activation of polyaniline with sulfonated beta-cyclodextrine. The above synthesized membranes were structurally characterized using Scanning Electron Microscopy, FT-IR spectroscopy, thermal analysis. The ionic conductivity and electrochemical characteristics were also determined by Electrochemical Impedance Spectroscopy.
{"title":"Polysulfone- doped polyaniline composite membranes. synthesis and electrochemical characteristics","authors":"Ș. Voicu, N. D. Stanciu, A. Nechifor, D. Vãireanu, G. Nechifor","doi":"10.1109/SMICND.2008.4703392","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703392","url":null,"abstract":"In order to combine the advantages of polysulfone (PSf) as a membrane material to that of polyaniline as a conductive polymer, one has attempted to obtain novel polysulfone-polyaniline composite membranes by a newly improved technique comparing to the existing ones. The strong point of this technique consists in a phase inversion by immersion precipitation accompanying by chemical reaction followed by the activation of polyaniline with sulfonated beta-cyclodextrine. The above synthesized membranes were structurally characterized using Scanning Electron Microscopy, FT-IR spectroscopy, thermal analysis. The ionic conductivity and electrochemical characteristics were also determined by Electrochemical Impedance Spectroscopy.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78731875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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