Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703431
L. Gagea, I. Rajković
Avionics applications are subject to safety requirements and special development considerations described in the DO-254 guidance. The challenge to developers of complex devices is different compared to other safety applications, like automotive electronics. The paper describes specific steps and processes and addresses one of the most actual issues: ldquoupgrading the design baselinerdquo.
{"title":"Designing devices for avionics applications and the DO-254 guideline","authors":"L. Gagea, I. Rajković","doi":"10.1109/SMICND.2008.4703431","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703431","url":null,"abstract":"Avionics applications are subject to safety requirements and special development considerations described in the DO-254 guidance. The challenge to developers of complex devices is different compared to other safety applications, like automotive electronics. The paper describes specific steps and processes and addresses one of the most actual issues: ldquoupgrading the design baselinerdquo.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"55 1","pages":"377-380"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73643700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703317
D. Foty
Some critical (but little-recognized) aspects of nanoscale electron device technology are considered. According to history, nanoscale electron devices will have to address some convergence of an abundance and a scarcity. A major impediment to progress is the emergence of a variety of granularities - a problem as much intellectual as material.
{"title":"Prospects for nanoscale electron devices: Some little-recognized problems","authors":"D. Foty","doi":"10.1109/SMICND.2008.4703317","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703317","url":null,"abstract":"Some critical (but little-recognized) aspects of nanoscale electron device technology are considered. According to history, nanoscale electron devices will have to address some convergence of an abundance and a scarcity. A major impediment to progress is the emergence of a variety of granularities - a problem as much intellectual as material.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"55 1","pages":"3-13"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74121291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703403
I. Sava, Ana‐Maria Resmerita
Azobenzene functionalised polymers are interesting and potentially useful materials for optical devices applications. The photoanisotropic azobenzene molecules upon irradiation with polarized light show photoinduced reorientation through the trans-cis-trans photoisomerisation cycles. A study concerning the surface structuration capacity of the polyimides described here was performed and the results obtained using Nd:YAG laser at 355 nm, at a incident fluence of 35mJ/cm2 are presented. The best results were obtained for 5 laser pulses, an increase of the pulse numbers leading to the diminution of the relief definition.
{"title":"Photoactive polyimides containing azobenzene pendent groups","authors":"I. Sava, Ana‐Maria Resmerita","doi":"10.1109/SMICND.2008.4703403","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703403","url":null,"abstract":"Azobenzene functionalised polymers are interesting and potentially useful materials for optical devices applications. The photoanisotropic azobenzene molecules upon irradiation with polarized light show photoinduced reorientation through the trans-cis-trans photoisomerisation cycles. A study concerning the surface structuration capacity of the polyimides described here was performed and the results obtained using Nd:YAG laser at 355 nm, at a incident fluence of 35mJ/cm2 are presented. The best results were obtained for 5 laser pulses, an increase of the pulse numbers leading to the diminution of the relief definition.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"62 1","pages":"283-286"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74409687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703449
C. Cimpulungeanu, M. Kusko, C. Kusko, D. Cristea, P. Schiopu
We designed and simulated a photonic crystal realized on silicon on insulator(SOI) layers. The obtained bandgap is centered on the wavelength of 1.55 mum, the spectral region for todaypsilas optical communications. We designed two types of waveguides (tapered and straight) that contain the photonic crystal, and these are to be implemented on SOI wafers. The photonic crystals consists in a square or hexagonal lattice of holes configured in a high refractive index layer deposited on silicon oxide. By using a combination of plane wave expansion (PWE) and finite difference time domain (FDTD) methods we have determined the bandgap of the structure and we have computed the transmission and reflection properties of the system. Using FDTD simulations, we have put in evidence the subwavelength confinement in a waveguide consisting in a line defects realized in the photonic crystal.
{"title":"3D photonic crystals : Design and simulation","authors":"C. Cimpulungeanu, M. Kusko, C. Kusko, D. Cristea, P. Schiopu","doi":"10.1109/SMICND.2008.4703449","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703449","url":null,"abstract":"We designed and simulated a photonic crystal realized on silicon on insulator(SOI) layers. The obtained bandgap is centered on the wavelength of 1.55 mum, the spectral region for todaypsilas optical communications. We designed two types of waveguides (tapered and straight) that contain the photonic crystal, and these are to be implemented on SOI wafers. The photonic crystals consists in a square or hexagonal lattice of holes configured in a high refractive index layer deposited on silicon oxide. By using a combination of plane wave expansion (PWE) and finite difference time domain (FDTD) methods we have determined the bandgap of the structure and we have computed the transmission and reflection properties of the system. Using FDTD simulations, we have put in evidence the subwavelength confinement in a waveguide consisting in a line defects realized in the photonic crystal.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"32 1","pages":"437-440"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79138991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703411
G. Brezeanu, A. Sevcenco, C. Boianceanu, I. Rusu, F. Draghici
A compact analytical model of nanoscale MOS transistors which takes into account the effects of velocity saturation and channel length modulation is proven. Equations for the transfer and output characteristics and for the dynamic analogue parameters (transconductance and output resistance) are obtained, in the case of pMOS, as well as nMOS transistors. Experimental transfer and output characteristics of short channel devices match well with calculated curves based on the model, for different transistor geometries. A very good agreement of the new model with the experimental data for transconductance and output resistance is also obtained.
{"title":"Complete analytical submicron MOS transistor model for analogue applications","authors":"G. Brezeanu, A. Sevcenco, C. Boianceanu, I. Rusu, F. Draghici","doi":"10.1109/SMICND.2008.4703411","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703411","url":null,"abstract":"A compact analytical model of nanoscale MOS transistors which takes into account the effects of velocity saturation and channel length modulation is proven. Equations for the transfer and output characteristics and for the dynamic analogue parameters (transconductance and output resistance) are obtained, in the case of pMOS, as well as nMOS transistors. Experimental transfer and output characteristics of short channel devices match well with calculated curves based on the model, for different transistor geometries. A very good agreement of the new model with the experimental data for transconductance and output resistance is also obtained.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"63 1","pages":"309-312"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80500224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703325
A. Georgakilas
An overview of our understanding of InN (0001) epitaxial growth and material properties is presented. Thermodynamic and kinetic aspects of the epitaxial growth of InN by nitrogen rf plasma source molecular beam epitaxy were analysed and the self-regulated growth mechanism of InN was determined. Optimized InN films were grown with thicknesses up to 10 mum. Fundamental material properties, such as lattice parameters and bandgap energy were determined. The acceptor-like electrical activity of threading dislocations was evaluated. GaN barrier-enhanced Schottky diodes were fabricated on a thin InN channel and could modulate its carrier concentration.
{"title":"InN: The low bandgap III-nitride semiconductor","authors":"A. Georgakilas","doi":"10.1109/SMICND.2008.4703325","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703325","url":null,"abstract":"An overview of our understanding of InN (0001) epitaxial growth and material properties is presented. Thermodynamic and kinetic aspects of the epitaxial growth of InN by nitrogen rf plasma source molecular beam epitaxy were analysed and the self-regulated growth mechanism of InN was determined. Optimized InN films were grown with thicknesses up to 10 mum. Fundamental material properties, such as lattice parameters and bandgap energy were determined. The acceptor-like electrical activity of threading dislocations was evaluated. GaN barrier-enhanced Schottky diodes were fabricated on a thin InN channel and could modulate its carrier concentration.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"22 1","pages":"43-52"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80063142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703367
T. Ignat, I. Kleps, M. Miu, F. Craciunoiu, A. Bragaru, M. Simion
Metallic substrates with ordered morphology have been shown to be very effective for surface-enhanced Raman scattering (SERS). The sensitivity of detection is increased by several orders of magnitude by using this technique. In this paper we investigate SERS on thermal evaporated gold layer/porous silicon substrate comparatively to the commercial SERS active substrate (Klarite) and we demonstrate the reproducibility of the response.
{"title":"Preparation of SERS-active porous gold substrate","authors":"T. Ignat, I. Kleps, M. Miu, F. Craciunoiu, A. Bragaru, M. Simion","doi":"10.1109/SMICND.2008.4703367","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703367","url":null,"abstract":"Metallic substrates with ordered morphology have been shown to be very effective for surface-enhanced Raman scattering (SERS). The sensitivity of detection is increased by several orders of magnitude by using this technique. In this paper we investigate SERS on thermal evaporated gold layer/porous silicon substrate comparatively to the commercial SERS active substrate (Klarite) and we demonstrate the reproducibility of the response.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"34 1","pages":"197-200"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90863240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703420
S. Basu
Si/SiGe heterojunction bipolar transistors have increasingly become important in high speed applications due to better performance of these devices with a modest increase in process complexity. Base transit time is an important factor to determine the speed of these devices. An analytical model is developed here to predict the variation of base transit time with temperature and other device parameters. Studies have been made for both uniform and exponential doping distributions with different Ge profiles in the base region.
{"title":"Analytical modelling of base transit time of SiGe HBTS including effect of temperature","authors":"S. Basu","doi":"10.1109/SMICND.2008.4703420","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703420","url":null,"abstract":"Si/SiGe heterojunction bipolar transistors have increasingly become important in high speed applications due to better performance of these devices with a modest increase in process complexity. Base transit time is an important factor to determine the speed of these devices. An analytical model is developed here to predict the variation of base transit time with temperature and other device parameters. Studies have been made for both uniform and exponential doping distributions with different Ge profiles in the base region.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"17 1","pages":"339-342"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87243220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703400
M. Danila, M. Miu, T. Ignat, I. Kleps, M. Simion, E. Vasile
Porous silicon with different pore sizes and / or densities impregnated with different metallic nanoparticles by various methods and techniques is subject of microstructural investigation by X-ray diffraction, X-ray reflectivity studies and SEM imaging. Crystallite sizes, texture and phase identification is revealed and their use in various applications (biosensors, fuel cell catalyst, etc) is evaluated.
{"title":"Microstructural investigation of nanocrystalline FCC metals (Pt, Pt-Fe) embeded into a porous silicon matrix","authors":"M. Danila, M. Miu, T. Ignat, I. Kleps, M. Simion, E. Vasile","doi":"10.1109/SMICND.2008.4703400","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703400","url":null,"abstract":"Porous silicon with different pore sizes and / or densities impregnated with different metallic nanoparticles by various methods and techniques is subject of microstructural investigation by X-ray diffraction, X-ray reflectivity studies and SEM imaging. Crystallite sizes, texture and phase identification is revealed and their use in various applications (biosensors, fuel cell catalyst, etc) is evaluated.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"33 1","pages":"271-274"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79636861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703401
C. Hulubei, E. Hamciuc, M. Brumǎ, M. Ignat
The ability of N-(4-carboxyphenyl) maleimide to act as a very effective and stable complexation agent for several transition metal ions, such as cobalt (II), copper (II), nickel (II), has been demonstrated. Polymer blends composed of poly(vinylidene difluoride) and some of the resulting metal complexes of N-(4-carboxyphenyl)maleimide were prepared by using solution casting technique. The resulting products were identified and characterized by IR and 1H-NMR spectroscopy, thermogravimetric analysis and differential scanning calorimetry.
{"title":"Polymer blends containing maleimide-metal complexes","authors":"C. Hulubei, E. Hamciuc, M. Brumǎ, M. Ignat","doi":"10.1109/SMICND.2008.4703401","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703401","url":null,"abstract":"The ability of N-(4-carboxyphenyl) maleimide to act as a very effective and stable complexation agent for several transition metal ions, such as cobalt (II), copper (II), nickel (II), has been demonstrated. Polymer blends composed of poly(vinylidene difluoride) and some of the resulting metal complexes of N-(4-carboxyphenyl)maleimide were prepared by using solution casting technique. The resulting products were identified and characterized by IR and 1H-NMR spectroscopy, thermogravimetric analysis and differential scanning calorimetry.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"49 1","pages":"275-278"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82781410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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