Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703360
C. Ravariu, C. Podaru, E. Manea, D. Vizireanu, A. Bondarciuc, A. Rusu, F. Ravariu
The electrical properties of the chemical mediators at synapses level could be investigated in vitro, with some test biodevices. One of neurotransmitters, like epinephrine, placed on an insulator support and contacted with metal electrodes, provides a Biomaterials On Insulators - BOI-type, structure. The test device is inspired from the pseudo-MOS technique, frequently used in the Silicon On Insulator characterisation. The DC regime study allows some polarography experiments. A behavior like the Field Effect Transistor was also investigated in DC regime, biasing a third terminal - the gate. A gate voltage control on the current is expected. It is still linear, emphasising none inversion layer onset. The AC regime measurements of the BOI device provided some conductometry results, providing the epinphrine resistivity.
{"title":"Measurements of the electrical characteristics in DC and AC regime for an epinephrine BOI device","authors":"C. Ravariu, C. Podaru, E. Manea, D. Vizireanu, A. Bondarciuc, A. Rusu, F. Ravariu","doi":"10.1109/SMICND.2008.4703360","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703360","url":null,"abstract":"The electrical properties of the chemical mediators at synapses level could be investigated in vitro, with some test biodevices. One of neurotransmitters, like epinephrine, placed on an insulator support and contacted with metal electrodes, provides a Biomaterials On Insulators - BOI-type, structure. The test device is inspired from the pseudo-MOS technique, frequently used in the Silicon On Insulator characterisation. The DC regime study allows some polarography experiments. A behavior like the Field Effect Transistor was also investigated in DC regime, biasing a third terminal - the gate. A gate voltage control on the current is expected. It is still linear, emphasising none inversion layer onset. The AC regime measurements of the BOI device provided some conductometry results, providing the epinphrine resistivity.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83366542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703347
E. Budianu, R. Muller, L. Eftime, E. Manea
Two linear photodetector arrays integrated with optical waveguide, designed as proximity/position optical microsensors are presented in this paper. Each of the two arrays consist in four silicon P+NN+ photodiodes, fabricated in an epitaxial silicon layer using standard Si device fabrication techniques and are integrated with SU8 optical waveguides. The optoelectrical characterization of every one photodetector of the linear array was realized by vertical illumination with a red radiation and good results have been obtained.
{"title":"Linear photodetector arrays integrated with optical waveguides for proximity optical microsensor","authors":"E. Budianu, R. Muller, L. Eftime, E. Manea","doi":"10.1109/SMICND.2008.4703347","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703347","url":null,"abstract":"Two linear photodetector arrays integrated with optical waveguide, designed as proximity/position optical microsensors are presented in this paper. Each of the two arrays consist in four silicon P+NN+ photodiodes, fabricated in an epitaxial silicon layer using standard Si device fabrication techniques and are integrated with SU8 optical waveguides. The optoelectrical characterization of every one photodetector of the linear array was realized by vertical illumination with a red radiation and good results have been obtained.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83767330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703389
I. Bejenari, V. Kantser
Electronic structure of bismuth telluride quantum wires with growth directions [110] and [015] is studied in the framework of anisotropic effective mass method using parabolic band approximation. The components of the electron and hole effective mass tensor for six valleys are calculated for both growth directions. In the temperature range from 77 K to 500 K, the dependence of the quantum wire Seebeck coefficient, S, electron thermal, kappa, and electrical, sigma, conductivity as well as figure of merit, ZT, on the square quantum wire thickness and excess hole concentration, pex, are investigated in constant relaxation time approximation. For p-type Bi2Te3 quantum wires, the maximum value of the figure of merit is equal to 1.4; 1.6; and 2.8 at the corresponding temperatures 310 K; 390 K; 480 K and quantum wire thickness 30 nm; 15 nm, and 7 nm (pex=5times1018 cm-3).
{"title":"Size quantization and thermoelectric properties of bismuth telluride nanowires","authors":"I. Bejenari, V. Kantser","doi":"10.1109/SMICND.2008.4703389","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703389","url":null,"abstract":"Electronic structure of bismuth telluride quantum wires with growth directions [110] and [015] is studied in the framework of anisotropic effective mass method using parabolic band approximation. The components of the electron and hole effective mass tensor for six valleys are calculated for both growth directions. In the temperature range from 77 K to 500 K, the dependence of the quantum wire Seebeck coefficient, S, electron thermal, kappa, and electrical, sigma, conductivity as well as figure of merit, ZT, on the square quantum wire thickness and excess hole concentration, pex, are investigated in constant relaxation time approximation. For p-type Bi2Te3 quantum wires, the maximum value of the figure of merit is equal to 1.4; 1.6; and 2.8 at the corresponding temperatures 310 K; 390 K; 480 K and quantum wire thickness 30 nm; 15 nm, and 7 nm (pex=5times1018 cm-3).","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83094963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703452
C. Neacsu, V. Chesaru, C. Dan, M. Bodea
One of the most important parameter in feedback circuit characterization is the loop gain. Loop gain direct measurement is not an easy task for the large majority of practical situations because the signals that appear in a system may form various and complicated loops. The classic approach is to break the loop and calculate the transfer around the loop. The loop breaking is not difficult to perform by manual analysis but can be impossible in computer analysis, using a circuit simulator. This paper presents a method, based on signal-flow graph, for loop gain determination without breaking any loop and therefore without circuit determinant or other circuit operating conditions like biasing modification.
{"title":"Loop gain measurements spice set-up","authors":"C. Neacsu, V. Chesaru, C. Dan, M. Bodea","doi":"10.1109/SMICND.2008.4703452","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703452","url":null,"abstract":"One of the most important parameter in feedback circuit characterization is the loop gain. Loop gain direct measurement is not an easy task for the large majority of practical situations because the signals that appear in a system may form various and complicated loops. The classic approach is to break the loop and calculate the transfer around the loop. The loop breaking is not difficult to perform by manual analysis but can be impossible in computer analysis, using a circuit simulator. This paper presents a method, based on signal-flow graph, for loop gain determination without breaking any loop and therefore without circuit determinant or other circuit operating conditions like biasing modification.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86539755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703340
M. Banciu, A. Ioachim, N. Militaru, G. Lojewski
Some aspects of microwave propagation through left-handed materials are investigated in this paper. The strong distortion of a Gaussian TEM pulse through a material with negative refraction index is studied in the time domain. Moreover, a method of extracting the constitutive parameters of a material by using the scattering parameters of a sample two-port is developed. This method is then applied to some left-handed microstrip structures.
{"title":"Investigation on microwave signal propagation through some left-handed structures","authors":"M. Banciu, A. Ioachim, N. Militaru, G. Lojewski","doi":"10.1109/SMICND.2008.4703340","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703340","url":null,"abstract":"Some aspects of microwave propagation through left-handed materials are investigated in this paper. The strong distortion of a Gaussian TEM pulse through a material with negative refraction index is studied in the time domain. Moreover, a method of extracting the constitutive parameters of a material by using the scattering parameters of a sample two-port is developed. This method is then applied to some left-handed microstrip structures.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74101121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703370
C. Panait, G. Caruntu
The paper presents the results of research work regarding the analysis and optimization of magnetic microsensor structures realized in MOS integrated circuits technology. By assimilating the MOSFET channel of almost constant depth with a Hall plate, the results obtained for the conventional Hall plates have been extended to MOS-Hall plates. On the basis of adequate models there have been established the noise main characteristics for bipolar lateral magnetotransistor, where the current deflection effect is dominating. An analysis of the devices characteristics in respect with the channel geometry and the material features has therefore been achieved for the first time.
{"title":"The noise of MOS magnetic microsensors structures","authors":"C. Panait, G. Caruntu","doi":"10.1109/SMICND.2008.4703370","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703370","url":null,"abstract":"The paper presents the results of research work regarding the analysis and optimization of magnetic microsensor structures realized in MOS integrated circuits technology. By assimilating the MOSFET channel of almost constant depth with a Hall plate, the results obtained for the conventional Hall plates have been extended to MOS-Hall plates. On the basis of adequate models there have been established the noise main characteristics for bipolar lateral magnetotransistor, where the current deflection effect is dominating. An analysis of the devices characteristics in respect with the channel geometry and the material features has therefore been achieved for the first time.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78634666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703413
N. Maticiuc, N. Spalatu, T. Potlog
CdS/CdTe/Te heterojunction have been studied by capacitance-voltage measurements over the temperature range 293 K-393 K. The potential of diffusion, profile of the ionized-charge concentration in the space charge region of heterojunction and its thickness are derived from the heterojunction capacitance measured at different bias voltages. The charge carrier concentrations calculated from (S/C)2 = f(U) for low and high voltage ranges, respectively are (1-3)ldr1014 cm-3 and it is associated with the volume concentration of CdTe and (2-5) 1013 cm-3 which corresponds to the region of interface of the CdS/CdTe/.
{"title":"Capacitance-voltage characteristics of the CdS/CdTe/Te heterojunctions","authors":"N. Maticiuc, N. Spalatu, T. Potlog","doi":"10.1109/SMICND.2008.4703413","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703413","url":null,"abstract":"CdS/CdTe/Te heterojunction have been studied by capacitance-voltage measurements over the temperature range 293 K-393 K. The potential of diffusion, profile of the ionized-charge concentration in the space charge region of heterojunction and its thickness are derived from the heterojunction capacitance measured at different bias voltages. The charge carrier concentrations calculated from (S/C)2 = f(U) for low and high voltage ranges, respectively are (1-3)ldr1014 cm-3 and it is associated with the volume concentration of CdTe and (2-5) 1013 cm-3 which corresponds to the region of interface of the CdS/CdTe/.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80981936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703412
Byoung-Chul Park, S. Lee, D. Chang, K. Bang, Sung-Jun Kim, Sang-bae Yi, E. Jung
In high voltage transistor (HVT), device characteristics could be affected by little changes of doping concentration or parasitic charges due to low substrate doping concentrations. Humps caused by boron segregation in sub-threshold region of HVT make bad effects on device characteristics. In this paper, we have presented the novel Fermi leve controlled HVT (FCHVT) to simply eliminate hump effects.
{"title":"A novel fermi level controlled High Voltage Transistor preventing sub-threshold hump","authors":"Byoung-Chul Park, S. Lee, D. Chang, K. Bang, Sung-Jun Kim, Sang-bae Yi, E. Jung","doi":"10.1109/SMICND.2008.4703412","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703412","url":null,"abstract":"In high voltage transistor (HVT), device characteristics could be affected by little changes of doping concentration or parasitic charges due to low substrate doping concentrations. Humps caused by boron segregation in sub-threshold region of HVT make bad effects on device characteristics. In this paper, we have presented the novel Fermi leve controlled HVT (FCHVT) to simply eliminate hump effects.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80501486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703373
G. Lojewski, N. Militaru, M. Banciu
In this paper a novel configuration of microwave planar filters, with multiple cross-couplings and with a number of poles of attenuation NZ equal to the order N of the filter, is investigated. The position of the poles on the frequency axis can be controlled, allowing the design of band-pass filters with improved selectivity with respect to the adjacent channels. The new configurations were designed and verified by em-field simulation. The responses of the designed filters are in good agreement with the specification, confirming the possibilities of designing microwave band-pass filters of a relatively low order with moderate losses and with improved performances.
{"title":"Microwave filters with multiple cross-couplings and maximum number of controlled attenuation poles","authors":"G. Lojewski, N. Militaru, M. Banciu","doi":"10.1109/SMICND.2008.4703373","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703373","url":null,"abstract":"In this paper a novel configuration of microwave planar filters, with multiple cross-couplings and with a number of poles of attenuation NZ equal to the order N of the filter, is investigated. The position of the poles on the frequency axis can be controlled, allowing the design of band-pass filters with improved selectivity with respect to the adjacent channels. The new configurations were designed and verified by em-field simulation. The responses of the designed filters are in good agreement with the specification, confirming the possibilities of designing microwave band-pass filters of a relatively low order with moderate losses and with improved performances.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85887867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703398
M. Brumǎ, M. Damaceanu, M. Cristea, C. Buiculescu
Two series of polyimides containing oxadiazole rings in the main chain were studied and compared with regard to their thermal properties and the ability to form thin films. The polyimides are based on aromatic diamines containing preformed oxadiazole ring which reacted with benzohenonetetracarboxylic dianhydride or with hexafluoroisopropylidene diphthalic dianhydride. The behavior of thin films in dynamomechanical analysis and their photoluminescence have been investigated.
{"title":"Polyimides with oxadiazole rings and thin films based on them","authors":"M. Brumǎ, M. Damaceanu, M. Cristea, C. Buiculescu","doi":"10.1109/SMICND.2008.4703398","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703398","url":null,"abstract":"Two series of polyimides containing oxadiazole rings in the main chain were studied and compared with regard to their thermal properties and the ability to form thin films. The polyimides are based on aromatic diamines containing preformed oxadiazole ring which reacted with benzohenonetetracarboxylic dianhydride or with hexafluoroisopropylidene diphthalic dianhydride. The behavior of thin films in dynamomechanical analysis and their photoluminescence have been investigated.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81980742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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