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2008 IEEE International Conference on Semiconductor Electronics最新文献

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Measurements of the electrical characteristics in DC and AC regime for an epinephrine BOI device 肾上腺素BOI装置直流和交流状态下的电特性测量
Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703360
C. Ravariu, C. Podaru, E. Manea, D. Vizireanu, A. Bondarciuc, A. Rusu, F. Ravariu
The electrical properties of the chemical mediators at synapses level could be investigated in vitro, with some test biodevices. One of neurotransmitters, like epinephrine, placed on an insulator support and contacted with metal electrodes, provides a Biomaterials On Insulators - BOI-type, structure. The test device is inspired from the pseudo-MOS technique, frequently used in the Silicon On Insulator characterisation. The DC regime study allows some polarography experiments. A behavior like the Field Effect Transistor was also investigated in DC regime, biasing a third terminal - the gate. A gate voltage control on the current is expected. It is still linear, emphasising none inversion layer onset. The AC regime measurements of the BOI device provided some conductometry results, providing the epinphrine resistivity.
化学介质在突触水平的电学性质可以在体外进行研究,并使用一些测试生物装置。其中一种神经递质,如肾上腺素,放置在绝缘体支架上,并与金属电极接触,提供了一种生物材料绝缘体- boi型结构。该测试装置的灵感来自于经常用于绝缘体上硅表征的伪mos技术。直流电态的研究允许进行极谱实验。与场效应晶体管类似的行为也被研究在直流状态下,偏置第三端-栅极。期望对电流进行栅极电压控制。它仍然是线性的,强调无反转层开始。BOI装置的交流状态测量提供了一些电导测量结果,提供了肾上腺素电阻率。
{"title":"Measurements of the electrical characteristics in DC and AC regime for an epinephrine BOI device","authors":"C. Ravariu, C. Podaru, E. Manea, D. Vizireanu, A. Bondarciuc, A. Rusu, F. Ravariu","doi":"10.1109/SMICND.2008.4703360","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703360","url":null,"abstract":"The electrical properties of the chemical mediators at synapses level could be investigated in vitro, with some test biodevices. One of neurotransmitters, like epinephrine, placed on an insulator support and contacted with metal electrodes, provides a Biomaterials On Insulators - BOI-type, structure. The test device is inspired from the pseudo-MOS technique, frequently used in the Silicon On Insulator characterisation. The DC regime study allows some polarography experiments. A behavior like the Field Effect Transistor was also investigated in DC regime, biasing a third terminal - the gate. A gate voltage control on the current is expected. It is still linear, emphasising none inversion layer onset. The AC regime measurements of the BOI device provided some conductometry results, providing the epinphrine resistivity.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"18 1","pages":"169-172"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83366542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Linear photodetector arrays integrated with optical waveguides for proximity optical microsensor 近距离光学微传感器中集成光波导的线性光电探测器阵列
Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703347
E. Budianu, R. Muller, L. Eftime, E. Manea
Two linear photodetector arrays integrated with optical waveguide, designed as proximity/position optical microsensors are presented in this paper. Each of the two arrays consist in four silicon P+NN+ photodiodes, fabricated in an epitaxial silicon layer using standard Si device fabrication techniques and are integrated with SU8 optical waveguides. The optoelectrical characterization of every one photodetector of the linear array was realized by vertical illumination with a red radiation and good results have been obtained.
本文提出了两种集成光波导的线性光电探测器阵列,设计成接近/位置光学微传感器。这两个阵列中的每一个都由四个硅P+NN+光电二极管组成,采用标准硅器件制造技术在外延硅层中制造,并与SU8光波导集成。利用红光垂直照射实现了线阵各光电探测器的光电特性,取得了良好的效果。
{"title":"Linear photodetector arrays integrated with optical waveguides for proximity optical microsensor","authors":"E. Budianu, R. Muller, L. Eftime, E. Manea","doi":"10.1109/SMICND.2008.4703347","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703347","url":null,"abstract":"Two linear photodetector arrays integrated with optical waveguide, designed as proximity/position optical microsensors are presented in this paper. Each of the two arrays consist in four silicon P+NN+ photodiodes, fabricated in an epitaxial silicon layer using standard Si device fabrication techniques and are integrated with SU8 optical waveguides. The optoelectrical characterization of every one photodetector of the linear array was realized by vertical illumination with a red radiation and good results have been obtained.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"79 1","pages":"129-132"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83767330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Size quantization and thermoelectric properties of bismuth telluride nanowires 碲化铋纳米线的尺寸量化和热电性能
Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703389
I. Bejenari, V. Kantser
Electronic structure of bismuth telluride quantum wires with growth directions [110] and [015] is studied in the framework of anisotropic effective mass method using parabolic band approximation. The components of the electron and hole effective mass tensor for six valleys are calculated for both growth directions. In the temperature range from 77 K to 500 K, the dependence of the quantum wire Seebeck coefficient, S, electron thermal, kappa, and electrical, sigma, conductivity as well as figure of merit, ZT, on the square quantum wire thickness and excess hole concentration, pex, are investigated in constant relaxation time approximation. For p-type Bi2Te3 quantum wires, the maximum value of the figure of merit is equal to 1.4; 1.6; and 2.8 at the corresponding temperatures 310 K; 390 K; 480 K and quantum wire thickness 30 nm; 15 nm, and 7 nm (pex=5times1018 cm-3).
采用抛物线带近似,在各向异性有效质量法的框架下研究了生长方向为[110]和[015]的碲化铋量子线的电子结构。计算了两个生长方向下6个谷的电子和空穴有效质量张量分量。在77 K ~ 500 K的温度范围内,研究了量子线的塞贝克系数S、电子热学系数kappa、电学系数sigma、电导率以及优值系数ZT与平方量子线厚度和多余空穴浓度pex的关系。对于p型Bi2Te3量子线,其优值最大值为1.4;1.6;对应温度为310 K时为2.8;390 K;480 K,量子线厚度30 nm;15nm和7nm (pex= 5times1018cm -3)。
{"title":"Size quantization and thermoelectric properties of bismuth telluride nanowires","authors":"I. Bejenari, V. Kantser","doi":"10.1109/SMICND.2008.4703389","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703389","url":null,"abstract":"Electronic structure of bismuth telluride quantum wires with growth directions [110] and [015] is studied in the framework of anisotropic effective mass method using parabolic band approximation. The components of the electron and hole effective mass tensor for six valleys are calculated for both growth directions. In the temperature range from 77 K to 500 K, the dependence of the quantum wire Seebeck coefficient, S, electron thermal, kappa, and electrical, sigma, conductivity as well as figure of merit, ZT, on the square quantum wire thickness and excess hole concentration, pex, are investigated in constant relaxation time approximation. For p-type Bi2Te3 quantum wires, the maximum value of the figure of merit is equal to 1.4; 1.6; and 2.8 at the corresponding temperatures 310 K; 390 K; 480 K and quantum wire thickness 30 nm; 15 nm, and 7 nm (pex=5times1018 cm-3).","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"30 1","pages":"233-236"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83094963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Loop gain measurements spice set-up 环路增益测量香料设置
Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703452
C. Neacsu, V. Chesaru, C. Dan, M. Bodea
One of the most important parameter in feedback circuit characterization is the loop gain. Loop gain direct measurement is not an easy task for the large majority of practical situations because the signals that appear in a system may form various and complicated loops. The classic approach is to break the loop and calculate the transfer around the loop. The loop breaking is not difficult to perform by manual analysis but can be impossible in computer analysis, using a circuit simulator. This paper presents a method, based on signal-flow graph, for loop gain determination without breaking any loop and therefore without circuit determinant or other circuit operating conditions like biasing modification.
反馈电路特性中最重要的参数之一是回路增益。在大多数实际情况下,环路增益的直接测量不是一件容易的事情,因为系统中出现的信号可能会形成各种复杂的环路。经典的方法是打破循环并计算循环周围的传输。通过人工分析,回路断开并不困难,但在使用电路模拟器的计算机分析中可能是不可能的。本文提出了一种基于信号流图的回路增益测定方法,该方法不需要断环,因此不需要电路行列式或其他电路工作条件,如偏置修改。
{"title":"Loop gain measurements spice set-up","authors":"C. Neacsu, V. Chesaru, C. Dan, M. Bodea","doi":"10.1109/SMICND.2008.4703452","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703452","url":null,"abstract":"One of the most important parameter in feedback circuit characterization is the loop gain. Loop gain direct measurement is not an easy task for the large majority of practical situations because the signals that appear in a system may form various and complicated loops. The classic approach is to break the loop and calculate the transfer around the loop. The loop breaking is not difficult to perform by manual analysis but can be impossible in computer analysis, using a circuit simulator. This paper presents a method, based on signal-flow graph, for loop gain determination without breaking any loop and therefore without circuit determinant or other circuit operating conditions like biasing modification.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"1 1","pages":"449-452"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86539755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation on microwave signal propagation through some left-handed structures 微波信号在一些左旋结构中的传播研究
Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703340
M. Banciu, A. Ioachim, N. Militaru, G. Lojewski
Some aspects of microwave propagation through left-handed materials are investigated in this paper. The strong distortion of a Gaussian TEM pulse through a material with negative refraction index is studied in the time domain. Moreover, a method of extracting the constitutive parameters of a material by using the scattering parameters of a sample two-port is developed. This method is then applied to some left-handed microstrip structures.
本文研究了微波在左手材料中传播的一些问题。在时域上研究了高斯瞬变电磁脉冲通过负折射率材料时的强畸变。此外,还提出了一种利用双孔样品散射参数提取材料本构参数的方法。然后将该方法应用于一些左旋微带结构。
{"title":"Investigation on microwave signal propagation through some left-handed structures","authors":"M. Banciu, A. Ioachim, N. Militaru, G. Lojewski","doi":"10.1109/SMICND.2008.4703340","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703340","url":null,"abstract":"Some aspects of microwave propagation through left-handed materials are investigated in this paper. The strong distortion of a Gaussian TEM pulse through a material with negative refraction index is studied in the time domain. Moreover, a method of extracting the constitutive parameters of a material by using the scattering parameters of a sample two-port is developed. This method is then applied to some left-handed microstrip structures.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"344 1","pages":"107-110"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74101121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
The noise of MOS magnetic microsensors structures MOS磁微传感器结构的噪声
Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703370
C. Panait, G. Caruntu
The paper presents the results of research work regarding the analysis and optimization of magnetic microsensor structures realized in MOS integrated circuits technology. By assimilating the MOSFET channel of almost constant depth with a Hall plate, the results obtained for the conventional Hall plates have been extended to MOS-Hall plates. On the basis of adequate models there have been established the noise main characteristics for bipolar lateral magnetotransistor, where the current deflection effect is dominating. An analysis of the devices characteristics in respect with the channel geometry and the material features has therefore been achieved for the first time.
本文介绍了用MOS集成电路技术实现磁性微传感器结构的分析与优化的研究成果。通过用霍尔板吸收几乎恒定深度的MOSFET通道,将传统霍尔板的结果推广到mos霍尔板。在充分建立模型的基础上,建立了以电流偏转效应为主的双极横向磁敏晶体管的噪声主特性。因此,首次实现了对通道几何形状和材料特征方面的器件特性的分析。
{"title":"The noise of MOS magnetic microsensors structures","authors":"C. Panait, G. Caruntu","doi":"10.1109/SMICND.2008.4703370","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703370","url":null,"abstract":"The paper presents the results of research work regarding the analysis and optimization of magnetic microsensor structures realized in MOS integrated circuits technology. By assimilating the MOSFET channel of almost constant depth with a Hall plate, the results obtained for the conventional Hall plates have been extended to MOS-Hall plates. On the basis of adequate models there have been established the noise main characteristics for bipolar lateral magnetotransistor, where the current deflection effect is dominating. An analysis of the devices characteristics in respect with the channel geometry and the material features has therefore been achieved for the first time.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"14 3 1","pages":"209-212"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78634666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Capacitance-voltage characteristics of the CdS/CdTe/Te heterojunctions CdS/CdTe/Te异质结的电容电压特性
Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703413
N. Maticiuc, N. Spalatu, T. Potlog
CdS/CdTe/Te heterojunction have been studied by capacitance-voltage measurements over the temperature range 293 K-393 K. The potential of diffusion, profile of the ionized-charge concentration in the space charge region of heterojunction and its thickness are derived from the heterojunction capacitance measured at different bias voltages. The charge carrier concentrations calculated from (S/C)2 = f(U) for low and high voltage ranges, respectively are (1-3)ldr1014 cm-3 and it is associated with the volume concentration of CdTe and (2-5) 1013 cm-3 which corresponds to the region of interface of the CdS/CdTe/.
在293 K-393 K的温度范围内对CdS/CdTe/Te异质结进行了电容电压测量。通过测量不同偏置电压下的异质结电容,得到了扩散势、异质结空间电荷区电离电荷浓度分布及其厚度。由(S/C)2 = f(U)计算出的低电压和高电压范围的载流子浓度分别为(1-3)ldr1014 cm-3,与CdTe的体积浓度有关;(2-5)1013 cm-3对应于CdS/CdTe/界面区域。
{"title":"Capacitance-voltage characteristics of the CdS/CdTe/Te heterojunctions","authors":"N. Maticiuc, N. Spalatu, T. Potlog","doi":"10.1109/SMICND.2008.4703413","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703413","url":null,"abstract":"CdS/CdTe/Te heterojunction have been studied by capacitance-voltage measurements over the temperature range 293 K-393 K. The potential of diffusion, profile of the ionized-charge concentration in the space charge region of heterojunction and its thickness are derived from the heterojunction capacitance measured at different bias voltages. The charge carrier concentrations calculated from (S/C)2 = f(U) for low and high voltage ranges, respectively are (1-3)ldr1014 cm-3 and it is associated with the volume concentration of CdTe and (2-5) 1013 cm-3 which corresponds to the region of interface of the CdS/CdTe/.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"81 1","pages":"317-320"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80981936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A novel fermi level controlled High Voltage Transistor preventing sub-threshold hump 一种防止亚阈值驼峰的新型费米能级控制高压晶体管
Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703412
Byoung-Chul Park, S. Lee, D. Chang, K. Bang, Sung-Jun Kim, Sang-bae Yi, E. Jung
In high voltage transistor (HVT), device characteristics could be affected by little changes of doping concentration or parasitic charges due to low substrate doping concentrations. Humps caused by boron segregation in sub-threshold region of HVT make bad effects on device characteristics. In this paper, we have presented the novel Fermi leve controlled HVT (FCHVT) to simply eliminate hump effects.
在高压晶体管(HVT)中,由于衬底掺杂浓度低,掺杂浓度或寄生电荷的变化很小,器件特性也会受到影响。在HVT的亚阈值区,硼偏析引起的驼峰对器件的性能有不良影响。在本文中,我们提出了一种新的费米能级控制HVT (FCHVT)来简单地消除驼峰效应。
{"title":"A novel fermi level controlled High Voltage Transistor preventing sub-threshold hump","authors":"Byoung-Chul Park, S. Lee, D. Chang, K. Bang, Sung-Jun Kim, Sang-bae Yi, E. Jung","doi":"10.1109/SMICND.2008.4703412","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703412","url":null,"abstract":"In high voltage transistor (HVT), device characteristics could be affected by little changes of doping concentration or parasitic charges due to low substrate doping concentrations. Humps caused by boron segregation in sub-threshold region of HVT make bad effects on device characteristics. In this paper, we have presented the novel Fermi leve controlled HVT (FCHVT) to simply eliminate hump effects.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"67 1","pages":"313-316"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80501486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Microwave filters with multiple cross-couplings and maximum number of controlled attenuation poles 具有多个交叉耦合和最大数量可控衰减极点的微波滤波器
Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703373
G. Lojewski, N. Militaru, M. Banciu
In this paper a novel configuration of microwave planar filters, with multiple cross-couplings and with a number of poles of attenuation NZ equal to the order N of the filter, is investigated. The position of the poles on the frequency axis can be controlled, allowing the design of band-pass filters with improved selectivity with respect to the adjacent channels. The new configurations were designed and verified by em-field simulation. The responses of the designed filters are in good agreement with the specification, confirming the possibilities of designing microwave band-pass filters of a relatively low order with moderate losses and with improved performances.
本文研究了一种具有多重交叉耦合和若干衰减极点NZ等于滤波器N阶的新型微波平面滤波器结构。极点在频率轴上的位置可以被控制,允许设计带通滤波器,相对于相邻的通道具有更好的选择性。设计了新的结构,并通过电磁场仿真进行了验证。所设计的滤波器的响应符合规范,证实了设计相对低阶、中等损耗和改进性能的微波带通滤波器的可能性。
{"title":"Microwave filters with multiple cross-couplings and maximum number of controlled attenuation poles","authors":"G. Lojewski, N. Militaru, M. Banciu","doi":"10.1109/SMICND.2008.4703373","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703373","url":null,"abstract":"In this paper a novel configuration of microwave planar filters, with multiple cross-couplings and with a number of poles of attenuation NZ equal to the order N of the filter, is investigated. The position of the poles on the frequency axis can be controlled, allowing the design of band-pass filters with improved selectivity with respect to the adjacent channels. The new configurations were designed and verified by em-field simulation. The responses of the designed filters are in good agreement with the specification, confirming the possibilities of designing microwave band-pass filters of a relatively low order with moderate losses and with improved performances.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"18 1","pages":"215-218"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85887867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Polyimides with oxadiazole rings and thin films based on them 含恶二唑环的聚酰亚胺及其薄膜
Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703398
M. Brumǎ, M. Damaceanu, M. Cristea, C. Buiculescu
Two series of polyimides containing oxadiazole rings in the main chain were studied and compared with regard to their thermal properties and the ability to form thin films. The polyimides are based on aromatic diamines containing preformed oxadiazole ring which reacted with benzohenonetetracarboxylic dianhydride or with hexafluoroisopropylidene diphthalic dianhydride. The behavior of thin films in dynamomechanical analysis and their photoluminescence have been investigated.
研究了主链上含有恶二唑环的两个系列聚酰亚胺,并比较了它们的热性能和成膜能力。聚酰亚胺是基于含有预形成的恶二唑环的芳香二胺,与苯并噻吩四羧基二酐或与六氟异丙基二苯二酐反应。本文研究了薄膜在动力力学分析中的行为及其光致发光。
{"title":"Polyimides with oxadiazole rings and thin films based on them","authors":"M. Brumǎ, M. Damaceanu, M. Cristea, C. Buiculescu","doi":"10.1109/SMICND.2008.4703398","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703398","url":null,"abstract":"Two series of polyimides containing oxadiazole rings in the main chain were studied and compared with regard to their thermal properties and the ability to form thin films. The polyimides are based on aromatic diamines containing preformed oxadiazole ring which reacted with benzohenonetetracarboxylic dianhydride or with hexafluoroisopropylidene diphthalic dianhydride. The behavior of thin films in dynamomechanical analysis and their photoluminescence have been investigated.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"38 1","pages":"263-266"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81980742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
2008 IEEE International Conference on Semiconductor Electronics
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